FR2929959B1 - Procede de preparation de polycristaux et de monocristaux d'oxyde de zinc (zno) sur un germe par sublimation activee chimiquement a haute temperature - Google Patents

Procede de preparation de polycristaux et de monocristaux d'oxyde de zinc (zno) sur un germe par sublimation activee chimiquement a haute temperature

Info

Publication number
FR2929959B1
FR2929959B1 FR0852418A FR0852418A FR2929959B1 FR 2929959 B1 FR2929959 B1 FR 2929959B1 FR 0852418 A FR0852418 A FR 0852418A FR 0852418 A FR0852418 A FR 0852418A FR 2929959 B1 FR2929959 B1 FR 2929959B1
Authority
FR
France
Prior art keywords
polycristals
monocrystals
germ
zno
preparation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0852418A
Other languages
English (en)
Other versions
FR2929959A1 (fr
Inventor
Jean Louis Santailler
Guy Chichignoud
Maurice Couchaud
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0852418A priority Critical patent/FR2929959B1/fr
Priority to JP2011503457A priority patent/JP2011516388A/ja
Priority to PCT/EP2009/054334 priority patent/WO2009125009A1/fr
Priority to US12/937,063 priority patent/US20110030611A1/en
Priority to EP09730718A priority patent/EP2262935A1/fr
Publication of FR2929959A1 publication Critical patent/FR2929959A1/fr
Application granted granted Critical
Publication of FR2929959B1 publication Critical patent/FR2929959B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
FR0852418A 2008-04-10 2008-04-10 Procede de preparation de polycristaux et de monocristaux d'oxyde de zinc (zno) sur un germe par sublimation activee chimiquement a haute temperature Expired - Fee Related FR2929959B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0852418A FR2929959B1 (fr) 2008-04-10 2008-04-10 Procede de preparation de polycristaux et de monocristaux d'oxyde de zinc (zno) sur un germe par sublimation activee chimiquement a haute temperature
JP2011503457A JP2011516388A (ja) 2008-04-10 2009-04-09 高温で化学的に活性化された昇華によりシード上に酸化亜鉛（ＺｎＯ）の多結晶および単結晶を調製する方法およびこの方法を行うためのデバイス
PCT/EP2009/054334 WO2009125009A1 (fr) 2008-04-10 2009-04-09 Procede de preparation de polycristaux et de monocristaux d'oxyde de zinc (zno) sur un germe par sublimation activée chimiquement a haute température et dispositif pour sa mise en œuvre
US12/937,063 US20110030611A1 (en) 2008-04-10 2009-04-09 METHOD FOR PREPARING POLYCRYSTALS AND SINGLE CRYSTALS OF ZINC OXIDE (ZnO) ON A SEED BY CHEMICALLY ACTIVATED SUBLIMATION AT HIGH TEMPERATURE AND DEVICE FOR CARRYING OUT SAID METHOD
EP09730718A EP2262935A1 (fr) 2008-04-10 2009-04-09 Procede de preparation de polycristaux et de monocristaux d'oxyde de zinc (zno) sur un germe par sublimation activée chimiquement a haute température et dispositif pour sa mise en uvre

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0852418A FR2929959B1 (fr) 2008-04-10 2008-04-10 Procede de preparation de polycristaux et de monocristaux d'oxyde de zinc (zno) sur un germe par sublimation activee chimiquement a haute temperature

Publications (2)

Publication Number Publication Date
FR2929959A1 FR2929959A1 (fr) 2009-10-16
FR2929959B1 true FR2929959B1 (fr) 2010-08-27

Family

ID=40032888

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0852418A Expired - Fee Related FR2929959B1 (fr) 2008-04-10 2008-04-10 Procede de preparation de polycristaux et de monocristaux d'oxyde de zinc (zno) sur un germe par sublimation activee chimiquement a haute temperature

Country Status (5)

Country Link
US (1) US20110030611A1 (fr)
EP (1) EP2262935A1 (fr)
JP (1) JP2011516388A (fr)
FR (1) FR2929959B1 (fr)
WO (1) WO2009125009A1 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8557628B2 (en) * 2010-10-07 2013-10-15 Fairfield Crystal Technology, Llc Method for production of zinc oxide single crystals
US8821634B2 (en) * 2011-03-22 2014-09-02 Gtat Corporation High temperature furnace insulation
JP2013035720A (ja) * 2011-08-09 2013-02-21 Fujikura Ltd 窒化アルミニウム単結晶の製造装置及び製造方法
CN102703972A (zh) * 2012-06-05 2012-10-03 西安理工大学 一种生长氧化锌晶体的装置
CN102703973B (zh) * 2012-06-05 2015-03-25 西安理工大学 一种生长氧化锌晶体的方法
JPWO2014174803A1 (ja) * 2013-04-22 2017-02-23 株式会社Ｊｏｌｅｄ Ｅｌ表示装置の製造方法
US10741724B2 (en) * 2015-10-02 2020-08-11 Seoul Viosys Co., Ltd. Light emitting diode devices with zinc oxide layer
CN106637411B (zh) * 2016-12-22 2019-04-05 苏州奥趋光电技术有限公司 一种氮化铝单晶生长方法
EP3712305A4 (fr) * 2017-11-15 2021-11-17 Flosfia Inc. Film semi-conducteur d'oxyde de type p et son procédé de fabrication
WO2019098294A1 (fr) * 2017-11-15 2019-05-23 株式会社Flosfia Procédé de formation de film semi-conducteur d'oxyde de type p
EP3922762A4 (fr) 2020-04-14 2022-01-05 Meishan Boya Advanced Materials Co., Ltd. Procédé et dispositif de croissance de cristal
CN113981528B (zh) * 2020-07-27 2024-06-21 环球晶圆股份有限公司 碳化硅晶片的制造方法以及半导体结构
CN112011825B (zh) * 2020-09-25 2021-06-15 武汉大学 生长氮化铝晶体的坩埚装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0407601B1 (fr) * 1988-12-16 1995-10-25 Matsushita Electric Industrial Co., Ltd. Procede de production de whiskers en oxyde de zinc
JPH03279214A (ja) * 1990-03-29 1991-12-10 Lion Corp 透明酸化亜鉛の製造方法
US5900060A (en) * 1996-07-03 1999-05-04 Cermet, Inc. Pressurized skull crucible apparatus for crystal growth and related system and methods
US5750188A (en) * 1996-08-29 1998-05-12 Motorola, Inc. Method for forming a thin film of a non-stoichiometric metal oxide
JP2000031559A (ja) * 1998-07-14 2000-01-28 Sekisui Plastics Co Ltd 酸化亜鉛圧電体およびその製造方法
TW554094B (en) * 1998-10-09 2003-09-21 Rohm Co Ltd P-type ZnO single crystal and method for producing the same
KR100343949B1 (ko) * 2000-01-26 2002-07-24 한국과학기술연구원 상온에서 작동하는 자외선 수광, 발광소자용 ＺｎＯ박막의 제조 방법 및 그를 위한 장치
JP3694736B2 (ja) * 2001-06-12 2005-09-14 独立行政法人産業技術総合研究所 酸化亜鉛単結晶の製造方法
US20060005763A1 (en) * 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US6770135B2 (en) * 2001-12-24 2004-08-03 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US6624441B2 (en) * 2002-02-07 2003-09-23 Eagle-Picher Technologies, Llc Homoepitaxial layers of p-type zinc oxide and the fabrication thereof
US7049190B2 (en) * 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
US6936101B2 (en) * 2002-06-24 2005-08-30 Cermet, Inc. Semi-insulating bulk zinc oxide single crystal
ES2214139B2 (es) * 2003-02-21 2005-03-16 Universidade De Santiago De Compostela Procedimiento de obtencion de recubrimientos superficiales de nitruro de silicio sobre piezas y componentes ceramicos.
CN100390329C (zh) * 2003-04-03 2008-05-28 三菱化学株式会社 氧化锌单晶
JP4366224B2 (ja) * 2004-03-26 2009-11-18 実 一色 酸化亜鉛結晶の成長方法
JP5276769B2 (ja) * 2004-10-01 2013-08-28 東京電波株式会社 六方晶系ウルツ鉱型単結晶、その製造方法、および六方晶系ウルツ鉱型単結晶基板
US7279040B1 (en) * 2005-06-16 2007-10-09 Fairfield Crystal Technology, Llc Method and apparatus for zinc oxide single crystal boule growth
JP5080043B2 (ja) * 2006-08-31 2012-11-21 新電元工業株式会社 半導体装置の製造方法、半導体装置の製造用治具、および半導体装置の製造装置

Also Published As

Publication number Publication date
US20110030611A1 (en) 2011-02-10
EP2262935A1 (fr) 2010-12-22
FR2929959A1 (fr) 2009-10-16
WO2009125009A1 (fr) 2009-10-15
JP2011516388A (ja) 2011-05-26

Similar Documents

Publication Publication Date Title
FR2929959B1 (fr) Procede de preparation de polycristaux et de monocristaux d'oxyde de zinc (zno) sur un germe par sublimation activee chimiquement a haute temperature
IL195882A (en) Crystalline forms of derivatives of (1 s) –1, 5 – anhydro – 1– c - (3 - ((phenyl) methyl) phenyl) - d -glucitol with amino acids and their use in the treatment of diabetes
IL193395A0 (en) Processes and apparatuses for the production of crystalline organic microparticle compositions by micro-milling and crystallization on micro-seed and their use
ZA200808016B (en) Device and process for the preparation of compounds by precipitation
IL195509A (en) A compound of translucent cyclic amide, a plant disease control method and a fungicide composition
SG10201508623RA (en) Crystals of laquinimod sodium, and process for the manufacture thereof
IL192241A0 (en) Improved process for the preparation of 4-(benzimidazolylmethylamino)-benzamides and the salts thereof
ZA200710360B (en) Novel 1,4-benzothiazepine-1, 1-dioxide derivative having improved properties, method for the production thereof, medicaments containing said compound, and use thereof
AR081226A1 (es) Polimorfo cristalino de 4-[5-[3-cloro-5-(trifluorometil)fenil]-4,5-dihidro-5-(trifluorometil)-3-isoxazolil]-n-[2-oxo-2-[(2,2,2-trifluoroetil)amino]etil]-1-naftalenocarboxamida
ZA201001833B (en) A novel additive for naphtenic acid corrision inhibition and method of using the same
AU2008215384A8 (en) Crystalline forms of thiazolidinedione compound and its manufacturing method
EP1968943A4 (fr) Procede ameliore de preparation de montelukast et de ses sels pharmaceutiquement acceptables
WO2012067372A3 (fr) Dispositif pour faire croître un lingot de saphir
EP1754981A4 (fr) MONOCRISTAL ZnO FAISANT OFFICE DE SCINTILLATEUR À TRES GRANDE VITESSE ET PROCEDE DE FABRICATION DE CELUI-CI
HRP20130558T1 (hr) Derivat 17-hidroksi-17-pentafluoretil-estra-4,9(10)-dien-11-arila, postupci za njegovu proizvodnju i njegova uporaba za lijeäśenje bolesti
IL194478A0 (en) Salt of sulfinylbenzimidazole compound, and crystal and amorphous form thereof
EP2174931A4 (fr) Composé amide et procédé de lutte contre des maladies des plantes à l'aide de ce composé
WO2007106022A3 (fr) Nouvelles formes cristallines
BRPI0719908A2 (pt) Forma cristalina, composto, uso de composto, formulação farmacêutica, método de tratamento de uma condição, e, processos para a produção de um composto cristalino e para a cristalização de um composto.
EP2154124A4 (fr) Composé amide et son utilisation pour éliminer les maladies des plantes
PL375878A1 (en) N-substituted-1h-indol-5-propionic acid compounds as ppar agonists useful for the treatment of diabetes
NZ587490A (en) Anti-Microbial Compounds containing compounds with a sugar substituent
MX2010001978A (es) Estereoisomero de acetamida.
FI20055120A0 (fi) Menetelmä mikro-organismien kasvun estämiseksi
FR2948782B1 (fr) Procede et dispositif de regulation de temperature d'un habitacle

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 9

ST Notification of lapse

Effective date: 20171229