JP5080043B2 - 半導体装置の製造方法、半導体装置の製造用治具、および半導体装置の製造装置 - Google Patents
半導体装置の製造方法、半導体装置の製造用治具、および半導体装置の製造装置 Download PDFInfo
- Publication number
- JP5080043B2 JP5080043B2 JP2006236606A JP2006236606A JP5080043B2 JP 5080043 B2 JP5080043 B2 JP 5080043B2 JP 2006236606 A JP2006236606 A JP 2006236606A JP 2006236606 A JP2006236606 A JP 2006236606A JP 5080043 B2 JP5080043 B2 JP 5080043B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- susceptor
- manufacturing
- semiconductor device
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 205
- 238000004519 manufacturing process Methods 0.000 title claims description 88
- 239000000758 substrate Substances 0.000 claims description 264
- 238000010438 heat treatment Methods 0.000 claims description 118
- 230000001965 increasing effect Effects 0.000 claims description 56
- 230000007246 mechanism Effects 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 43
- 239000012790 adhesive layer Substances 0.000 claims description 37
- 239000004575 stone Substances 0.000 claims description 26
- 230000005855 radiation Effects 0.000 claims description 20
- 238000012546 transfer Methods 0.000 claims description 18
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 15
- 230000006698 induction Effects 0.000 claims description 14
- 230000005540 biological transmission Effects 0.000 claims description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 229910002601 GaN Inorganic materials 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 230000005669 field effect Effects 0.000 claims description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- FGUJWQZQKHUJMW-UHFFFAOYSA-N [AlH3].[B] Chemical compound [AlH3].[B] FGUJWQZQKHUJMW-UHFFFAOYSA-N 0.000 claims description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 230000003068 static effect Effects 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 125000000837 carbohydrate group Chemical group 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 26
- 229910002804 graphite Inorganic materials 0.000 description 20
- 239000010439 graphite Substances 0.000 description 20
- 239000007789 gas Substances 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 239000010410 layer Substances 0.000 description 16
- 239000010453 quartz Substances 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 238000011109 contamination Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 8
- 239000003870 refractory metal Substances 0.000 description 8
- 150000001720 carbohydrates Chemical group 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000004913 activation Effects 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 150000001247 metal acetylides Chemical class 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- OWEGMIWEEQEYGQ-UHFFFAOYSA-N 100676-05-9 Natural products OC1C(O)C(O)C(CO)OC1OCC1C(O)C(O)C(O)C(OC2C(OC(O)C(O)C2O)CO)O1 OWEGMIWEEQEYGQ-UHFFFAOYSA-N 0.000 description 1
- GUBGYTABKSRVRQ-XLOQQCSPSA-N Alpha-Lactose Chemical compound O[C@@H]1[C@@H](O)[C@@H](O)[C@@H](CO)O[C@H]1O[C@@H]1[C@@H](CO)O[C@H](O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-XLOQQCSPSA-N 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GUBGYTABKSRVRQ-CUHNMECISA-N D-Cellobiose Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@H]1O[C@@H]1[C@@H](CO)OC(O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-CUHNMECISA-N 0.000 description 1
- WQZGKKKJIJFFOK-QTVWNMPRSA-N D-mannopyranose Chemical compound OC[C@H]1OC(O)[C@@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-QTVWNMPRSA-N 0.000 description 1
- 229930091371 Fructose Natural products 0.000 description 1
- 239000005715 Fructose Substances 0.000 description 1
- RFSUNEUAIZKAJO-ARQDHWQXSA-N Fructose Chemical compound OC[C@H]1O[C@](O)(CO)[C@@H](O)[C@@H]1O RFSUNEUAIZKAJO-ARQDHWQXSA-N 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- GUBGYTABKSRVRQ-QKKXKWKRSA-N Lactose Natural products OC[C@H]1O[C@@H](O[C@H]2[C@H](O)[C@@H](O)C(O)O[C@@H]2CO)[C@H](O)[C@@H](O)[C@H]1O GUBGYTABKSRVRQ-QKKXKWKRSA-N 0.000 description 1
- GUBGYTABKSRVRQ-PICCSMPSSA-N Maltose Natural products O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@@H]1O[C@@H]1[C@@H](CO)OC(O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-PICCSMPSSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 description 1
- 229930006000 Sucrose Natural products 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- WQZGKKKJIJFFOK-PHYPRBDBSA-N alpha-D-galactose Chemical compound OC[C@H]1O[C@H](O)[C@H](O)[C@@H](O)[C@H]1O WQZGKKKJIJFFOK-PHYPRBDBSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 1
- 239000010428 baryte Substances 0.000 description 1
- 229910052601 baryte Inorganic materials 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- GUBGYTABKSRVRQ-QUYVBRFLSA-N beta-maltose Chemical compound OC[C@H]1O[C@H](O[C@H]2[C@H](O)[C@@H](O)[C@H](O)O[C@@H]2CO)[C@H](O)[C@@H](O)[C@@H]1O GUBGYTABKSRVRQ-QUYVBRFLSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000002016 disaccharides Chemical class 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229930182830 galactose Natural products 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 150000004676 glycans Chemical class 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000008101 lactose Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 150000002772 monosaccharides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920001282 polysaccharide Polymers 0.000 description 1
- 239000005017 polysaccharide Substances 0.000 description 1
- 239000006100 radiation absorber Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000005720 sucrose Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
Description
タと、前記発熱体として前記半導体基板上に載置され、該サセプタと螺合するキャップとを含む。
Claims (30)
- 発熱体であるサセプタ上に搭載された半導体基板と前記サセプタとの密着度を密着度増加機構によって増加させる工程と、
前記サセプタを発熱させて前記半導体基板を所定温度に加熱する工程と、
を有し、
前記密着度増加機構は、前記半導体基板上に載置された発熱体を有し、前記発熱体は、誘導加熱性または輻射光吸収性の何れかを有する半導体装置の製造方法。 - 前記密着度増加機構は、前記サセプタと、前記発熱体として前記半導体基板上に載置された重石材とを含む請求項1に記載の半導体装置の製造方法。
- 前記半導体基板のデバイス形成領域外に前記重石材が載置される請求項2に記載の半導体装置の製造方法。
- 前記密着度増加機構は、前記サセプタと、前記発熱体として前記半導体基板上に載置され、該サセプタと螺合するキャップとを含む請求項1に記載の半導体装置の製造方法。
- 前記半導体基板のデバイス形成領域外に前記キャップが載置される請求項4に記載の半導体装置の製造方法。
- 前記密着度増加機構は、前記サセプタと、該サセプタおよび前記半導体基板の間に設けられた接着層とを含む請求項1に記載の半導体装置の製造方法。
- 前記接着層の主成分が糖類である請求項6に記載の半導体装置の製造方法。
- 発熱体であるサセプタ上に搭載された半導体基板への伝達熱を伝達熱増加機構によって増加させる工程と、
前記サセプタを発熱させて前記半導体基板を所定温度に加熱する工程と、
を有し、
前記伝達熱増加機構は、前記半導体基板上に載置された発熱体を有し、前記発熱体は、輻射光吸収性を有する半導体装置の製造方法。 - 前記伝達熱増加機構は、前記サセプタと、前記半導体基板上に載置され、輻射光吸収性を有する前記発熱体である複数の小片とを含む請求項8に記載の半導体装置の製造方法。
- 前記サセプタは、前記半導体基板を多段に搭載可能に設けられている請求項9に記載の半導体装置の製造方法。
- 前記複数の小片は、平面的に見て互いに重ならないように配置される請求項10に記載の半導体装置の製造方法。
- 前記半導体基板のデバイス形成領域外に前記小片が載置される請求項9〜請求項11のいずれかに記載の半導体装置の製造方法。
- 前記半導体基板を所定温度で加熱する工程は真空中で行われる請求項1〜請求項12のいずれかに記載の半導体装置の製造方法。
- 前記半導体基板の主成分は炭化珪素またはダイヤモンドである請求項1〜請求項13のいずれかに記載の半導体装置の製造方法。
- 前記半導体基板の主成分は窒化物である請求項1〜請求項13のいずれかに記載の半導体装置の製造方法。
- 前記窒化物は、窒化ガリウム、窒化アルミニウム、窒化ホウ素、窒化アルミニウムガリウム、または窒化ホウ素アルミニウムガリウムである請求項15に記載の半導体装置の製造方法。
- 前記半導体装置は、ショットバリアダイオード、p−i−nダイオード、MPSダイオード、JBSダイオード、MOSFET、静電誘導型トランジスタ、接合型電界効果トランジスタ、MESFETまたはバイポーラトランジスタである請求項1〜請求項16のいずれかに記載の半導体装置の製造方法。
- 発熱体であるサセプタの発熱によって半導体基板を所定温度に加熱する際に該半導体基板を保持するための半導体装置の製造用治具であって、前記半導体基板と前記サセプタとの密着度を増加させる密着度増加機構を備え、
前記密着度増加機構は、前記半導体基板上に載置された発熱体を有し、前記発熱体は、誘導加熱性または輻射光吸収性の何れかを有する半導体装置の製造用治具。 - 前記密着度増加機構は、前記半導体基板が搭載される前記サセプタと、前記発熱体として前記半導体基板上に載置された重石材とを含む請求項18に記載の半導体装置の製造用治具。
- 前記密着度増加機構は、前記半導体基板の保持時には、前記半導体基板のデバイス形成領域外に前記重石材が載置されるように構成されている請求項19に記載の半導体装置の製造用治具。
- 前記密着度増加機構は、前記サセプタと、前記発熱体として前記半導体基板上に載置され、該サセプタと螺合するキャップとを含む請求項19に記載の半導体装置の製造用治具。
- 前記密着度増加機構は、前記半導体基板の保持時には、前記半導体基板のデバイス形成領域外に前記キャップが載置されるように構成されている請求項21に記載の半導体装置の製造用治具。
- 前記密着度増加機構は、前記サセプタと、該サセプタおよび前記半導体基板の間に設けられた接着層とを含む請求項18に記載の半導体装置の製造用治具。
- 前記接着層の主成分が糖類である請求項23に記載の半導体装置の製造用治具。
- 発熱体であるサセプタの発熱によって半導体基板を所定温度に加熱する際に該半導体基板を保持するための半導体装置の製造用治具であって、前記半導体基板への伝達熱を増加させる伝達熱増加機構を備え、
前記伝達熱増加機構は、前記半導体基板上に載置された発熱体を有し、前記発熱体は、輻射光吸収性を有する半導体装置の製造用治具。 - 前記伝達熱増加機構は、前記サセプタと、前記半導体基板上に載置され、輻射光吸収性を有する前記発熱体である複数の小片とを含む請求項25に記載の半導体装置の製造用治具。
- 前記サセプタは、前記半導体装置を多段に搭載可能に設けられている請求項26に記載の半導体装置の製造用治具。
- 前記複数の小片は、前記半導体基板の保持時には、平面的に見て互いに重ならない配置となるように構成されている請求項27に記載の半導体装置の製造用治具。
- 前記伝達熱増加機構は、前記半導体基板の保持時には、前記半導体基板のデバイス形成領域外に前記小片が載置されるように構成されている請求項26〜請求項28のいずれかに記載の半導体装置の製造用治具
- 請求項18〜請求項29のいずれかに記載の半導体装置の製造用治具と、
前記半導体基板および前記製造用治具を収納する真空室と、
前記サセプタを加熱する加熱機構と、
を備えた半導体装置の製造装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006236606A JP5080043B2 (ja) | 2006-08-31 | 2006-08-31 | 半導体装置の製造方法、半導体装置の製造用治具、および半導体装置の製造装置 |
EP07015728A EP1895567A3 (en) | 2006-08-31 | 2007-08-09 | Method, tool, and apparatus for manufacturing a semiconductor device |
US11/889,403 US8703626B2 (en) | 2006-08-31 | 2007-08-13 | Method, tool, and apparatus for manufacturing a semiconductor device |
CNA2007101477713A CN101136350A (zh) | 2006-08-31 | 2007-08-28 | 制造半导体器件的方法、工具和装置 |
KR1020070087259A KR101388204B1 (ko) | 2006-08-31 | 2007-08-29 | 반도체 디바이스를 제조하는 방법, 공구 및 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006236606A JP5080043B2 (ja) | 2006-08-31 | 2006-08-31 | 半導体装置の製造方法、半導体装置の製造用治具、および半導体装置の製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008060401A JP2008060401A (ja) | 2008-03-13 |
JP5080043B2 true JP5080043B2 (ja) | 2012-11-21 |
Family
ID=38462395
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006236606A Expired - Fee Related JP5080043B2 (ja) | 2006-08-31 | 2006-08-31 | 半導体装置の製造方法、半導体装置の製造用治具、および半導体装置の製造装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8703626B2 (ja) |
EP (1) | EP1895567A3 (ja) |
JP (1) | JP5080043B2 (ja) |
KR (1) | KR101388204B1 (ja) |
CN (1) | CN101136350A (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2929959B1 (fr) * | 2008-04-10 | 2010-08-27 | Commissariat Energie Atomique | Procede de preparation de polycristaux et de monocristaux d'oxyde de zinc (zno) sur un germe par sublimation activee chimiquement a haute temperature |
CN102110489B (zh) * | 2010-12-24 | 2012-08-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | 高强度透明高导电性自支持碳纳米管超薄膜及其制备方法 |
JP6104823B2 (ja) * | 2011-03-01 | 2017-03-29 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 薄型加熱基板支持体 |
US20140273533A1 (en) * | 2013-03-15 | 2014-09-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor Annealing Method Utilizing a Vacuum Environment |
US10407769B2 (en) * | 2016-03-18 | 2019-09-10 | Goodrich Corporation | Method and apparatus for decreasing the radial temperature gradient in CVI/CVD furnaces |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60239400A (ja) * | 1984-05-11 | 1985-11-28 | Sumitomo Electric Ind Ltd | 化合物半導体のアニ−ル法 |
US5228501A (en) * | 1986-12-19 | 1993-07-20 | Applied Materials, Inc. | Physical vapor deposition clamping mechanism and heater/cooler |
JP2886878B2 (ja) * | 1989-03-01 | 1999-04-26 | 株式会社日立製作所 | 真空処理装置 |
JPH0364040A (ja) * | 1989-08-02 | 1991-03-19 | Hitachi Ltd | 試料ホルダ |
JPH05166730A (ja) * | 1991-12-12 | 1993-07-02 | Sony Corp | 半導体製造装置 |
JPH0717148Y2 (ja) | 1992-07-28 | 1995-04-19 | 日電アネルバ株式会社 | 基板装置 |
JPH0653308A (ja) * | 1992-07-31 | 1994-02-25 | Fujitsu Ltd | 基板装着方法 |
EP0601615A1 (en) * | 1992-12-08 | 1994-06-15 | Koninklijke Philips Electronics N.V. | Method of manufacturing a semiconductor device whereby a semiconductor body is temporarily fastened to a further body for a processing operation |
US5437757A (en) * | 1994-01-21 | 1995-08-01 | Applied Materials, Inc. | Clamp ring for domed pedestal in wafer processing chamber |
KR950025850A (ko) * | 1994-02-17 | 1995-09-18 | 서성기 | 박막의 열처리 장치 |
US5405518A (en) * | 1994-04-26 | 1995-04-11 | Industrial Technology Research Institute | Workpiece holder apparatus |
US5966623A (en) * | 1995-10-25 | 1999-10-12 | Eastman Kodak Company | Metal impurity neutralization within semiconductors by fluorination |
US5917203A (en) * | 1996-07-29 | 1999-06-29 | Motorola, Inc. | Lateral gate vertical drift region transistor |
JPH11330214A (ja) * | 1998-05-19 | 1999-11-30 | Shinko Electric Ind Co Ltd | 加熱装置およびこれに用いるガイドリング |
US6187135B1 (en) * | 1999-03-30 | 2001-02-13 | Sun Ho Chung | Process for making recycled paper having improving strength properties |
US6187134B1 (en) * | 1999-07-09 | 2001-02-13 | The Board Of Trustees Of The Leland Stanford Junior University | Reusable wafer support for semiconductor processing |
JP3841988B2 (ja) * | 1999-09-30 | 2006-11-08 | 株式会社吉野工業所 | エアゾール式噴霧器 |
US6593168B1 (en) * | 2000-02-03 | 2003-07-15 | Advanced Micro Devices, Inc. | Method and apparatus for accurate alignment of integrated circuit in flip-chip configuration |
JP3390409B2 (ja) * | 2000-06-02 | 2003-03-24 | エヌイーシーセミコンダクターズ九州株式会社 | サポートフレーム貼付装置 |
JP4583591B2 (ja) * | 2000-12-15 | 2010-11-17 | 東京エレクトロン株式会社 | 処理方法及び処理装置 |
JP3771833B2 (ja) * | 2001-11-14 | 2006-04-26 | 三菱重工業株式会社 | ウエハ支持装置及び半導体製造装置 |
SG113448A1 (en) * | 2002-02-25 | 2005-08-29 | Semiconductor Energy Lab | Fabrication system and a fabrication method of a light emitting device |
JP4067858B2 (ja) * | 2002-04-16 | 2008-03-26 | 東京エレクトロン株式会社 | Ald成膜装置およびald成膜方法 |
JP3988676B2 (ja) * | 2003-05-01 | 2007-10-10 | セイコーエプソン株式会社 | 塗布装置、薄膜の形成方法、薄膜形成装置及び半導体装置の製造方法 |
JP2005197464A (ja) * | 2004-01-07 | 2005-07-21 | Rohm Co Ltd | 半導体装置の製造方法 |
JP2006013269A (ja) * | 2004-06-29 | 2006-01-12 | Sanyo Electric Co Ltd | 気相成長装置および気相成長方法 |
-
2006
- 2006-08-31 JP JP2006236606A patent/JP5080043B2/ja not_active Expired - Fee Related
-
2007
- 2007-08-09 EP EP07015728A patent/EP1895567A3/en not_active Withdrawn
- 2007-08-13 US US11/889,403 patent/US8703626B2/en not_active Expired - Fee Related
- 2007-08-28 CN CNA2007101477713A patent/CN101136350A/zh active Pending
- 2007-08-29 KR KR1020070087259A patent/KR101388204B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US20080052901A1 (en) | 2008-03-06 |
KR20080020547A (ko) | 2008-03-05 |
KR101388204B1 (ko) | 2014-04-29 |
EP1895567A2 (en) | 2008-03-05 |
JP2008060401A (ja) | 2008-03-13 |
US8703626B2 (en) | 2014-04-22 |
EP1895567A3 (en) | 2008-06-25 |
CN101136350A (zh) | 2008-03-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4348408B2 (ja) | 半導体装置の製造方法 | |
JP4971340B2 (ja) | 炭化珪素半導体素子の製造方法 | |
KR100858599B1 (ko) | 기상성장장치와 지지대 | |
JP2875768B2 (ja) | 半導体基板の熱処理方法 | |
JP5080043B2 (ja) | 半導体装置の製造方法、半導体装置の製造用治具、および半導体装置の製造装置 | |
JP5620090B2 (ja) | 基板処理装置、熱処理基板の製造方法及び半導体デバイスの製造方法 | |
WO2019128524A1 (zh) | 一种消除晶圆翘曲的方法及复合衬底 | |
WO2015019707A1 (ja) | 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法 | |
JP6136732B2 (ja) | 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法 | |
WO2011016392A1 (ja) | 炭化珪素半導体装置の製造方法 | |
EP2400528B1 (en) | Method for manufacturing silicon carbide semiconductor device | |
WO2015033740A1 (ja) | 炭化珪素半導体素子および炭化珪素半導体素子の製造方法 | |
JP3741283B2 (ja) | 熱処理装置及びそれを用いた熱処理方法 | |
US11576259B2 (en) | Carrier, laminate and method of manufacturing semiconductor devices | |
JP4286978B2 (ja) | 半導体基板の熱処理方法 | |
JP2017168676A (ja) | 炭化珪素半導体素子および炭化珪素半導体素子の製造方法 | |
US9698017B2 (en) | Manufacturing method of semiconductor device | |
JP4418879B2 (ja) | 熱処理装置及び熱処理方法 | |
JP4992695B2 (ja) | 炭化珪素半導体装置の製造方法 | |
JP7151688B2 (ja) | 炭化珪素エピ基板の製造方法及び半導体装置の製造方法 | |
JP2018206925A (ja) | アニール装置及び半導体ウェハの製造方法 | |
JP4100669B2 (ja) | 炭化珪素薄膜の形成方法 | |
WO2022270525A1 (ja) | 半導体素子および半導体素子の製造方法 | |
JP6340642B2 (ja) | 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法 | |
CN115394647A (zh) | 一种碳化硅半导体欧姆接触退火的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090707 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120522 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120524 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120713 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120731 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120830 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150907 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313117 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |