DE3872471D1 - Einrichtung fuer czochralski-einkristallzuechtung. - Google Patents
Einrichtung fuer czochralski-einkristallzuechtung.Info
- Publication number
- DE3872471D1 DE3872471D1 DE8888402284T DE3872471T DE3872471D1 DE 3872471 D1 DE3872471 D1 DE 3872471D1 DE 8888402284 T DE8888402284 T DE 8888402284T DE 3872471 T DE3872471 T DE 3872471T DE 3872471 D1 DE3872471 D1 DE 3872471D1
- Authority
- DE
- Germany
- Prior art keywords
- equipment
- single crystal
- crystal growing
- czochralski single
- czochralski
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62227922A JPH0639352B2 (ja) | 1987-09-11 | 1987-09-11 | 単結晶の製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3872471D1 true DE3872471D1 (de) | 1992-08-06 |
DE3872471T2 DE3872471T2 (de) | 1993-02-11 |
Family
ID=16868399
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888402284T Expired - Fee Related DE3872471T2 (de) | 1987-09-11 | 1988-09-09 | Einrichtung fuer czochralski-einkristallzuechtung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4956153A (de) |
EP (1) | EP0308308B1 (de) |
JP (1) | JPH0639352B2 (de) |
DE (1) | DE3872471T2 (de) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5264189A (en) * | 1988-02-23 | 1993-11-23 | Mitsubishi Materials Corporation | Apparatus for growing silicon crystals |
JPH0699217B2 (ja) * | 1989-07-31 | 1994-12-07 | 信越半導体株式会社 | 単結晶成長装置 |
JPH0729874B2 (ja) * | 1989-11-04 | 1995-04-05 | コマツ電子金属株式会社 | 多結晶シリコン製造装置の芯線間接続用ブリッジ |
JP2709310B2 (ja) * | 1989-11-11 | 1998-02-04 | 住友シチックス株式会社 | 単結晶引上げ装置 |
JPH0777994B2 (ja) * | 1989-11-16 | 1995-08-23 | 信越半導体株式会社 | 単結晶の酸素濃度コントロール方法及び装置 |
JPH0777995B2 (ja) * | 1989-11-16 | 1995-08-23 | 信越半導体株式会社 | 単結晶の比抵抗コントロール方法 |
US5312600A (en) * | 1990-03-20 | 1994-05-17 | Toshiba Ceramics Co. | Silicon single crystal manufacturing apparatus |
WO1991014809A1 (en) * | 1990-03-20 | 1991-10-03 | Nkk Corporation | Apparatus for making silicon single crystal |
JP2585123B2 (ja) * | 1990-04-13 | 1997-02-26 | 東芝セラミックス株式会社 | シリコン単結晶の製造方法 |
JP2670548B2 (ja) * | 1990-04-27 | 1997-10-29 | 東芝セラミックス株式会社 | シリコン単結晶の製造装置 |
JPH06103714B2 (ja) * | 1990-11-22 | 1994-12-14 | 信越半導体株式会社 | シリコン単結晶の電気特性検査方法 |
JP3016897B2 (ja) * | 1991-03-20 | 2000-03-06 | 信越半導体株式会社 | シリコン単結晶の製造方法及び装置 |
US5408952A (en) * | 1991-04-26 | 1995-04-25 | Mitsubishi Materials Corporation | Single crystal growth method |
US5441014A (en) * | 1991-06-24 | 1995-08-15 | Komatsu Electronic Metals Co., Ltd. | Apparatus for pulling up a single crystal |
JP2800482B2 (ja) * | 1991-06-28 | 1998-09-21 | 信越半導体株式会社 | シリコン単結晶の製造方法 |
JP2620999B2 (ja) * | 1991-10-17 | 1997-06-18 | 信越半導体株式会社 | 単結晶引上装置 |
US5373805A (en) * | 1991-10-17 | 1994-12-20 | Shin-Etsu Handotai Co., Ltd. | Single crystal pulling apparatus |
JPH05194075A (ja) * | 1992-01-24 | 1993-08-03 | Nec Corp | 単結晶育成法 |
JP2795036B2 (ja) * | 1992-02-04 | 1998-09-10 | 信越半導体株式会社 | 単結晶引上装置 |
JP2606046B2 (ja) * | 1992-04-16 | 1997-04-30 | 住友金属工業株式会社 | 単結晶引き上げ時における単結晶酸素濃度の制御方法 |
JP2720262B2 (ja) * | 1992-10-26 | 1998-03-04 | 科学技術振興事業団 | 単結晶引上げ装置 |
JP2807609B2 (ja) * | 1993-01-28 | 1998-10-08 | 三菱マテリアルシリコン株式会社 | 単結晶の引上装置 |
JP2619611B2 (ja) * | 1993-05-31 | 1997-06-11 | 住友シチックス株式会社 | 単結晶の製造装置および製造方法 |
JP3341378B2 (ja) * | 1993-08-25 | 2002-11-05 | 富士通株式会社 | シリコン結晶中の水素濃度測定方法及びシリコン結晶の製造方法 |
JP2686223B2 (ja) * | 1993-11-30 | 1997-12-08 | 住友シチックス株式会社 | 単結晶製造装置 |
US5550374A (en) * | 1994-05-12 | 1996-08-27 | Memc Electronic Materials, Inc. | Methods and apparatus for determining interstitial oxygen content of relatively large diameter silicon crystals by infrared spectroscopy |
US5683505A (en) * | 1994-11-08 | 1997-11-04 | Sumitomo Sitix Corporation | Process for producing single crystals |
DE4442829A1 (de) * | 1994-12-01 | 1996-06-05 | Wacker Siltronic Halbleitermat | Vorrichtung und Verfahren zur Herstellung eines Einkristalls |
JP3285111B2 (ja) * | 1994-12-05 | 2002-05-27 | 信越半導体株式会社 | 結晶欠陥の少ないシリコン単結晶の製造方法 |
JP3006669B2 (ja) * | 1995-06-20 | 2000-02-07 | 信越半導体株式会社 | 結晶欠陥の均一なシリコン単結晶の製造方法およびその製造装置 |
EP0765954B1 (de) * | 1995-09-26 | 1999-04-28 | Balzers und Leybold Deutschland Holding Aktiengesellschaft | Kristallziehanlage |
JPH09183686A (ja) * | 1995-12-27 | 1997-07-15 | Shin Etsu Handotai Co Ltd | 単結晶引き上げ方法及び装置 |
US5840120A (en) * | 1996-01-22 | 1998-11-24 | Memc Electronic Materials, Inc. | Apparatus for controlling nucleation of oxygen precipitates in silicon crystals |
JP4097729B2 (ja) * | 1996-05-22 | 2008-06-11 | Sumco Techxiv株式会社 | 半導体単結晶製造装置 |
DE19622664A1 (de) * | 1996-06-05 | 1997-12-11 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zur Herstellung von Einkristallen |
US5824152A (en) * | 1996-07-09 | 1998-10-20 | Komatsu Electronic Metals Co., Ltd. | Semiconductor single-crystal pulling apparatus |
AU6264198A (en) * | 1997-02-06 | 1998-08-26 | Crysteco, Inc. | Method and apparatus for growing crystals |
US5942032A (en) * | 1997-08-01 | 1999-08-24 | Memc Electronic Materials, Inc. | Heat shield assembly and method of growing vacancy rich single crystal silicon |
JP3267225B2 (ja) * | 1997-12-26 | 2002-03-18 | 住友金属工業株式会社 | 単結晶引き上げ方法、及び単結晶引き上げ装置 |
US6482263B1 (en) * | 2000-10-06 | 2002-11-19 | Memc Electronic Materials, Inc. | Heat shield assembly for crystal pulling apparatus |
JP2007176717A (ja) * | 2005-12-27 | 2007-07-12 | Sumco Corp | シリコン単結晶の製造方法 |
US8152921B2 (en) * | 2006-09-01 | 2012-04-10 | Okmetic Oyj | Crystal manufacturing |
JP2009102194A (ja) * | 2007-10-23 | 2009-05-14 | Tokuyama Corp | フッ化金属単結晶体引上げ装置及び該装置を用いたフッ化金属単結晶体の製造方法 |
JP4499178B2 (ja) * | 2009-04-03 | 2010-07-07 | Sumco Techxiv株式会社 | シリコン融液の汚染防止装置 |
KR101115697B1 (ko) * | 2009-12-02 | 2012-03-06 | 웅진폴리실리콘주식회사 | 에너지 효율을 높여주는 복사열 차단막을 갖는 화학기상증착 반응기 |
LT2824071T (lt) * | 2012-03-09 | 2018-08-10 | Silicio Ferrosolar S.L. | Silicio valymo įrenginys |
CN102758253A (zh) * | 2012-06-20 | 2012-10-31 | 合肥景坤新能源有限公司 | 直拉多或单晶硅制备工艺 |
CN107075717B (zh) * | 2014-09-19 | 2020-06-16 | 各星有限公司 | 用于防止熔体污染的拉晶机 |
US10487418B2 (en) * | 2016-01-06 | 2019-11-26 | Globalwafers Co., Ltd. | Seed chuck assemblies and crystal pulling systems for reducing deposit build-up during crystal growth process |
TWI695915B (zh) * | 2019-07-04 | 2020-06-11 | 環球晶圓股份有限公司 | 矽單晶長晶裝置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3206286A (en) * | 1959-07-23 | 1965-09-14 | Westinghouse Electric Corp | Apparatus for growing crystals |
US3265469A (en) * | 1964-09-21 | 1966-08-09 | Gen Electric | Crystal growing apparatus |
US3511610A (en) * | 1966-10-14 | 1970-05-12 | Gen Motors Corp | Silicon crystal growing |
DE2821481C2 (de) * | 1978-05-17 | 1985-12-05 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Vorrichtung zum Ziehen von hochreinen Halbleiterstäben aus der Schmelze |
JPS5556098A (en) * | 1978-10-17 | 1980-04-24 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Method and apparatus for producing si single crystal rod |
DE3005492C2 (de) * | 1980-02-14 | 1983-10-27 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung reinster Einkristalle durch Tiegelziehen nach Czochralski |
DE3027262A1 (de) * | 1980-07-18 | 1982-02-11 | Skf Kugellagerfabriken Gmbh, 8720 Schweinfurt | Im ziehverfahren hergestellte, duennwandige lagerbuechse |
GB2139918B (en) * | 1983-05-21 | 1986-09-10 | Cambridge Instr Ltd | Crystal growing apparatus |
JPS6163593A (ja) * | 1984-09-05 | 1986-04-01 | Toshiba Corp | 化合物半導体単結晶の製造装置 |
JPS6168389A (ja) * | 1984-09-06 | 1986-04-08 | Sony Corp | 単結晶成長装置 |
JPS62138384A (ja) * | 1985-12-11 | 1987-06-22 | Shin Etsu Handotai Co Ltd | 単結晶の引上方法 |
-
1987
- 1987-09-11 JP JP62227922A patent/JPH0639352B2/ja not_active Expired - Lifetime
-
1988
- 1988-09-09 DE DE8888402284T patent/DE3872471T2/de not_active Expired - Fee Related
- 1988-09-09 EP EP88402284A patent/EP0308308B1/de not_active Expired - Lifetime
- 1988-09-09 US US07/242,414 patent/US4956153A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH0639352B2 (ja) | 1994-05-25 |
JPS6472984A (en) | 1989-03-17 |
DE3872471T2 (de) | 1993-02-11 |
EP0308308A1 (de) | 1989-03-22 |
EP0308308B1 (de) | 1992-07-01 |
US4956153A (en) | 1990-09-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |