JPS6483600A - Silicon dendritic web crystal growth - Google Patents
Silicon dendritic web crystal growthInfo
- Publication number
- JPS6483600A JPS6483600A JP63223368A JP22336888A JPS6483600A JP S6483600 A JPS6483600 A JP S6483600A JP 63223368 A JP63223368 A JP 63223368A JP 22336888 A JP22336888 A JP 22336888A JP S6483600 A JPS6483600 A JP S6483600A
- Authority
- JP
- Japan
- Prior art keywords
- crystal growth
- dendritic web
- web crystal
- silicon dendritic
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US9538387A | 1987-09-08 | 1987-09-08 | |
US95,383 | 1987-09-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6483600A true JPS6483600A (en) | 1989-03-29 |
JP2575838B2 JP2575838B2 (en) | 1997-01-29 |
Family
ID=22251718
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63223368A Expired - Lifetime JP2575838B2 (en) | 1987-09-08 | 1988-09-06 | Silicon dendrite web crystal growth method |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2575838B2 (en) |
KR (1) | KR960013580B1 (en) |
AU (1) | AU602113B2 (en) |
FR (1) | FR2620135A1 (en) |
IT (1) | IT1226404B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6143633A (en) * | 1995-10-05 | 2000-11-07 | Ebara Solar, Inc. | In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon |
CA2216998C (en) * | 1997-10-01 | 2005-05-03 | Balakrishnan R. Bathey | In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon |
JP5030350B2 (en) * | 2001-09-18 | 2012-09-19 | コスモ石油株式会社 | Silicon manufacturing apparatus and method |
JP5030351B2 (en) * | 2001-09-26 | 2012-09-19 | コスモ石油株式会社 | Silicon manufacturing apparatus and method |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3615261A (en) * | 1969-04-02 | 1971-10-26 | Motorola Inc | Method of producing single semiconductor crystals |
US4415401A (en) * | 1980-03-10 | 1983-11-15 | Mobil Solar Energy Corporation | Control of atmosphere surrounding crystal growth zone |
US4443411A (en) * | 1980-12-15 | 1984-04-17 | Mobil Solar Energy Corporation | Apparatus for controlling the atmosphere surrounding a crystal growth zone |
JPS61178495A (en) * | 1985-01-31 | 1986-08-11 | Fujitsu Ltd | Method for growing single crystal |
-
1988
- 1988-08-11 AU AU20935/88A patent/AU602113B2/en not_active Ceased
- 1988-08-26 IT IT8821755A patent/IT1226404B/en active
- 1988-09-06 JP JP63223368A patent/JP2575838B2/en not_active Expired - Lifetime
- 1988-09-07 FR FR8811701A patent/FR2620135A1/en active Pending
- 1988-09-08 KR KR1019880011587A patent/KR960013580B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
FR2620135A1 (en) | 1989-03-10 |
AU602113B2 (en) | 1990-09-27 |
IT8821755A0 (en) | 1988-08-26 |
IT1226404B (en) | 1991-01-15 |
KR890005825A (en) | 1989-05-17 |
KR960013580B1 (en) | 1996-10-09 |
JP2575838B2 (en) | 1997-01-29 |
AU2093588A (en) | 1989-03-09 |
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