AU586757B2 - Lid for improved dendritic web growth - Google Patents

Lid for improved dendritic web growth

Info

Publication number
AU586757B2
AU586757B2 AU76689/87A AU7668987A AU586757B2 AU 586757 B2 AU586757 B2 AU 586757B2 AU 76689/87 A AU76689/87 A AU 76689/87A AU 7668987 A AU7668987 A AU 7668987A AU 586757 B2 AU586757 B2 AU 586757B2
Authority
AU
Australia
Prior art keywords
lid
dendritic web
web growth
improved dendritic
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU76689/87A
Other versions
AU7668987A (en
Inventor
Charles Stuart Duncan
Edgar Leonard Kochka
Paul Anthony Piotrowski
Raymond George Seidensticker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Solar Inc
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of AU7668987A publication Critical patent/AU7668987A/en
Application granted granted Critical
Publication of AU586757B2 publication Critical patent/AU586757B2/en
Assigned to EBARA SOLAR, INC. reassignment EBARA SOLAR, INC. Alteration of Name(s) in Register under S187 Assignors: WESTINGHOUSE ELECTRIC CORPORATION
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU76689/87A 1986-12-18 1987-08-07 Lid for improved dendritic web growth Ceased AU586757B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US94309286A 1986-12-18 1986-12-18
US943092 1986-12-18

Publications (2)

Publication Number Publication Date
AU7668987A AU7668987A (en) 1988-06-23
AU586757B2 true AU586757B2 (en) 1989-07-20

Family

ID=25479092

Family Applications (1)

Application Number Title Priority Date Filing Date
AU76689/87A Ceased AU586757B2 (en) 1986-12-18 1987-08-07 Lid for improved dendritic web growth

Country Status (7)

Country Link
JP (1) JP2627901B2 (en)
KR (1) KR960000061B1 (en)
AU (1) AU586757B2 (en)
GB (1) GB2198965B (en)
IN (1) IN168114B (en)
IT (1) IT1229975B (en)
MY (1) MY101906A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU610586B2 (en) * 1987-09-02 1991-05-23 Ebara Solar, Inc. Apparatus for silicon web growth of higher output and improved growth stability

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4751059A (en) * 1986-12-05 1988-06-14 Westinghouse Electric Corp. Apparatus for growing dendritic web crystals of constant width
US6093244A (en) * 1997-04-10 2000-07-25 Ebara Solar, Inc. Silicon ribbon growth dendrite thickness control system
KR20010108163A (en) * 1999-02-02 2001-12-07 로시 리차드 Silicon ribbon growth dendrite thickness control system
JP6028308B1 (en) * 2015-10-29 2016-11-16 並木精密宝石株式会社 Heat reflector structure of growth furnace for EFG method
JP5923700B1 (en) * 2015-11-30 2016-05-25 並木精密宝石株式会社 Large EFG method growth furnace lid structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU8098087A (en) * 1986-12-05 1988-06-09 Ebara Corporation Concept and apparatus for growing dendritic web crystals of constant width

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN161924B (en) * 1984-10-29 1988-02-27 Westinghouse Electric Corp

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU8098087A (en) * 1986-12-05 1988-06-09 Ebara Corporation Concept and apparatus for growing dendritic web crystals of constant width

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU610586B2 (en) * 1987-09-02 1991-05-23 Ebara Solar, Inc. Apparatus for silicon web growth of higher output and improved growth stability

Also Published As

Publication number Publication date
JP2627901B2 (en) 1997-07-09
AU7668987A (en) 1988-06-23
IT8741659A0 (en) 1987-08-17
GB2198965A (en) 1988-06-29
GB2198965B (en) 1990-10-31
KR880007196A (en) 1988-08-26
GB8719475D0 (en) 1987-09-23
KR960000061B1 (en) 1996-01-03
JPS63166788A (en) 1988-07-09
IT1229975B (en) 1991-09-20
MY101906A (en) 1992-02-15
IN168114B (en) 1991-02-09

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Legal Events

Date Code Title Description
MK14 Patent ceased section 143(a) (annual fees not paid) or expired