KR880007196A - Lead of susceptor for web growth - Google Patents

Lead of susceptor for web growth Download PDF

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Publication number
KR880007196A
KR880007196A KR1019870008980A KR870008980A KR880007196A KR 880007196 A KR880007196 A KR 880007196A KR 1019870008980 A KR1019870008980 A KR 1019870008980A KR 870008980 A KR870008980 A KR 870008980A KR 880007196 A KR880007196 A KR 880007196A
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KR
South Korea
Prior art keywords
groove
web
plate side
lead
susceptor
Prior art date
Application number
KR1019870008980A
Other languages
Korean (ko)
Other versions
KR960000061B1 (en
Inventor
수튜어트 던칸 챠알스
레오나드 코카 에드가
앤쏘니 피오트로프스키 폴
죠오지 지이덴스티 레이몬드
Original Assignee
피. 이. 레고
웨스팅 하우스 일렉트릭 코오포레이숀
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 피. 이. 레고, 웨스팅 하우스 일렉트릭 코오포레이숀 filed Critical 피. 이. 레고
Publication of KR880007196A publication Critical patent/KR880007196A/en
Application granted granted Critical
Publication of KR960000061B1 publication Critical patent/KR960000061B1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

내용 없음.No content.

Description

웨브성장용 서스셉터의 리드Lead of susceptor for web growth

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도 본 발명에 의한 서스셉터의 리드 개략도.1 is a schematic diagram of a susceptor lead according to the present invention.

제2도 및 제3도는 수지형 웨브로 부터 발생하는 방사열 손실을 도시하는 개략도.2 and 3 are schematic diagrams showing the radiant heat loss from a resinous web.

Claims (4)

내부 판측과 외부 판측을 갖고, 용융결정체로된 수지상의 웨브가 잡아당겨지는 홈을 중앙에 구비하며, 상기 홈의 양단에서 이 홈과 일치되게 형성된 한쌍의 개구와 상기 홈과 개구사이에서 위치하여 상기 외부판측으로 부터 인접하는 내부 판측으로 연장되어 있는 홈을 구비하는 하나의 판으로 형성되어서 상기 홈, 개구, 그리고 이 홈과 개구사이에 있는 또 다른 홈이 상기 수지상의 웨브로 부터 열의 방사를 조절하여 상기 내부 판측 근처에서 수지상 웨브에 대체로 균일한 온도분포를 제공할 수 있도록 상호 연관된 작용을 하는 것을 특징으로 하는 웨브성장용 서스셉터의 리드.It has an inner plate side and an outer plate side, and has a groove in which the resinous web made of molten crystal is drawn in the center, and is located between the groove and the opening and a pair of openings formed at both ends of the groove to coincide with the groove. Formed of a plate having grooves extending from the outer plate side to the adjacent inner plate side such that the groove, the opening, and another groove between the groove and the opening control the radiation of heat from the dendritic web. And a web growth susceptor lead interrelated to provide a generally uniform temperature distribution to the dendritic web near the inner plate side. 제1항에 있어서, 상기 홈은 그 양단에 확장된 부위를 갖고 있으며, 그 전체적인 형태는 아령의 형상으로 되어 있는 것을 특징으로 하는 웨브성장용 서스셉터의 리드.The web growth susceptor lead according to claim 1, wherein the groove has portions extending at both ends thereof, and the overall shape is in the shape of a dumbbell. 제2항에 있어서 상기 확장부는 원형인 것을 특징으로 하는 웨브성장용 서스셉터의 리드.3. The lead of a web growth susceptor according to claim 2, wherein the extension portion is circular. 제1항 내지 제3항중 어느 한 항에 있어서, 상기 홈과 개구는 외부판측의 면으로 부터 카운터보어의 형상으로 가공되어 있는 것을 특징으로 하는 웨브성장용 서스셉터의 리드.The web growth susceptor lead according to any one of claims 1 to 3, wherein the grooves and the openings are processed in the shape of a counterbore from the surface on the outer plate side. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019870008980A 1986-12-18 1987-08-17 Lids for improved dendritic web ribbon crystal growth KR960000061B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US94309286A 1986-12-18 1986-12-18
US943092 1986-12-18
US943,092 1986-12-18

Publications (2)

Publication Number Publication Date
KR880007196A true KR880007196A (en) 1988-08-26
KR960000061B1 KR960000061B1 (en) 1996-01-03

Family

ID=25479092

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870008980A KR960000061B1 (en) 1986-12-18 1987-08-17 Lids for improved dendritic web ribbon crystal growth

Country Status (7)

Country Link
JP (1) JP2627901B2 (en)
KR (1) KR960000061B1 (en)
AU (1) AU586757B2 (en)
GB (1) GB2198965B (en)
IN (1) IN168114B (en)
IT (1) IT1229975B (en)
MY (1) MY101906A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4751059A (en) * 1986-12-05 1988-06-14 Westinghouse Electric Corp. Apparatus for growing dendritic web crystals of constant width
US4828808A (en) * 1987-09-02 1989-05-09 The United States Of America As Represented By The United States Department Of Energy Apparatus for silicon web growth of higher output and improved growth stability
US6093244A (en) * 1997-04-10 2000-07-25 Ebara Solar, Inc. Silicon ribbon growth dendrite thickness control system
ATE370263T1 (en) * 1999-02-02 2007-09-15 Ebara Corp DEVICE FOR CONTROLLING THE LAYER THICKNESS OF A DENDRITE DURING GROWING A SILICON TAPE
JP6028308B1 (en) * 2015-10-29 2016-11-16 並木精密宝石株式会社 Heat reflector structure of growth furnace for EFG method
JP5923700B1 (en) * 2015-11-30 2016-05-25 並木精密宝石株式会社 Large EFG method growth furnace lid structure

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN161924B (en) * 1984-10-29 1988-02-27 Westinghouse Electric Corp
US4751059A (en) * 1986-12-05 1988-06-14 Westinghouse Electric Corp. Apparatus for growing dendritic web crystals of constant width

Also Published As

Publication number Publication date
MY101906A (en) 1992-02-15
JP2627901B2 (en) 1997-07-09
IN168114B (en) 1991-02-09
AU7668987A (en) 1988-06-23
IT8741659A0 (en) 1987-08-17
GB8719475D0 (en) 1987-09-23
GB2198965A (en) 1988-06-29
JPS63166788A (en) 1988-07-09
KR960000061B1 (en) 1996-01-03
IT1229975B (en) 1991-09-20
GB2198965B (en) 1990-10-31
AU586757B2 (en) 1989-07-20

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