IT1226404B - METHOD FOR GROWING A DENDRITIC STRUCTURE SILICON CRYSTAL. - Google Patents

METHOD FOR GROWING A DENDRITIC STRUCTURE SILICON CRYSTAL.

Info

Publication number
IT1226404B
IT1226404B IT8821755A IT2175588A IT1226404B IT 1226404 B IT1226404 B IT 1226404B IT 8821755 A IT8821755 A IT 8821755A IT 2175588 A IT2175588 A IT 2175588A IT 1226404 B IT1226404 B IT 1226404B
Authority
IT
Italy
Prior art keywords
growing
silicon crystal
dendritic structure
structure silicon
dendritic
Prior art date
Application number
IT8821755A
Other languages
Italian (it)
Other versions
IT8821755A0 (en
Inventor
Edgar Leonard Kochka
William Clyde Higginbotham
Paul Anthony Piotrowski
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of IT8821755A0 publication Critical patent/IT8821755A0/en
Application granted granted Critical
Publication of IT1226404B publication Critical patent/IT1226404B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
IT8821755A 1987-09-08 1988-08-26 METHOD FOR GROWING A DENDRITIC STRUCTURE SILICON CRYSTAL. IT1226404B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9538387A 1987-09-08 1987-09-08

Publications (2)

Publication Number Publication Date
IT8821755A0 IT8821755A0 (en) 1988-08-26
IT1226404B true IT1226404B (en) 1991-01-15

Family

ID=22251718

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8821755A IT1226404B (en) 1987-09-08 1988-08-26 METHOD FOR GROWING A DENDRITIC STRUCTURE SILICON CRYSTAL.

Country Status (5)

Country Link
JP (1) JP2575838B2 (en)
KR (1) KR960013580B1 (en)
AU (1) AU602113B2 (en)
FR (1) FR2620135A1 (en)
IT (1) IT1226404B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6143633A (en) * 1995-10-05 2000-11-07 Ebara Solar, Inc. In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon
AU740188B2 (en) * 1997-10-01 2001-11-01 Ebara Corporation In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon
JP5030350B2 (en) * 2001-09-18 2012-09-19 コスモ石油株式会社 Silicon manufacturing apparatus and method
JP5030351B2 (en) * 2001-09-26 2012-09-19 コスモ石油株式会社 Silicon manufacturing apparatus and method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615261A (en) * 1969-04-02 1971-10-26 Motorola Inc Method of producing single semiconductor crystals
US4415401A (en) * 1980-03-10 1983-11-15 Mobil Solar Energy Corporation Control of atmosphere surrounding crystal growth zone
US4443411A (en) * 1980-12-15 1984-04-17 Mobil Solar Energy Corporation Apparatus for controlling the atmosphere surrounding a crystal growth zone
JPS61178495A (en) * 1985-01-31 1986-08-11 Fujitsu Ltd Method for growing single crystal

Also Published As

Publication number Publication date
AU2093588A (en) 1989-03-09
KR960013580B1 (en) 1996-10-09
FR2620135A1 (en) 1989-03-10
AU602113B2 (en) 1990-09-27
JP2575838B2 (en) 1997-01-29
JPS6483600A (en) 1989-03-29
IT8821755A0 (en) 1988-08-26
KR890005825A (en) 1989-05-17

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970827