DE102019206090A1 - Siliziumcarbid-Halbleitervorrichtung, Leistungswandler und Verfahren zum Herstellen einer Siliziumcarbid-Halbleitervorrichtung - Google Patents

Siliziumcarbid-Halbleitervorrichtung, Leistungswandler und Verfahren zum Herstellen einer Siliziumcarbid-Halbleitervorrichtung Download PDF

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DE102019206090A1
DE102019206090A1 DE102019206090.0A DE102019206090A DE102019206090A1 DE 102019206090 A1 DE102019206090 A1 DE 102019206090A1 DE 102019206090 A DE102019206090 A DE 102019206090A DE 102019206090 A1 DE102019206090 A1 DE 102019206090A1
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region
silicon carbide
conductivity type
electric field
gate trench
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Yuji Ebiike
Yasuhiro Kagawa
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
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    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
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    • H10D30/66—Vertical DMOS [VDMOS] FETs
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  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Inverter Devices (AREA)
DE102019206090.0A 2018-05-09 2019-04-29 Siliziumcarbid-Halbleitervorrichtung, Leistungswandler und Verfahren zum Herstellen einer Siliziumcarbid-Halbleitervorrichtung Pending DE102019206090A1 (de)

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JP2018-090470 2018-05-09
JP2018090470A JP7068916B2 (ja) 2018-05-09 2018-05-09 炭化珪素半導体装置、電力変換装置、および炭化珪素半導体装置の製造方法

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US (2) US20190348524A1 (https=)
JP (1) JP7068916B2 (https=)
CN (1) CN110473903B (https=)
DE (1) DE102019206090A1 (https=)

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WO2021106152A1 (ja) * 2019-11-28 2021-06-03 三菱電機株式会社 炭化珪素半導体装置、電力変換装置および炭化珪素半導体装置の製造方法
JP7354868B2 (ja) * 2020-02-13 2023-10-03 株式会社デンソー スイッチング素子
JP7735083B2 (ja) * 2020-05-22 2025-09-08 ヒュンダイ・モービス・カンパニー・リミテッド パワー半導体素子およびその製造方法
US11961903B2 (en) * 2020-05-26 2024-04-16 Hyundai Mobis Co., Ltd. Power semiconductor device and method of fabricating the same
JP2021190647A (ja) * 2020-06-04 2021-12-13 豊田合成株式会社 半導体装置とその製造方法
CN111755525A (zh) * 2020-07-24 2020-10-09 华羿微电子股份有限公司 一种Trench MOS功率器件及制备方法
US11004940B1 (en) * 2020-07-31 2021-05-11 Genesic Semiconductor Inc. Manufacture of power devices having increased cross over current
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JP7585794B2 (ja) 2021-01-07 2024-11-19 三菱電機株式会社 半導体装置
US11616123B2 (en) * 2021-02-12 2023-03-28 Alpha And Omega Semiconductor International Lp Enhancement on-state power semiconductor device characteristics utilizing new cell geometries
WO2022270245A1 (ja) * 2021-06-23 2022-12-29 住友電気工業株式会社 炭化珪素半導体装置
CN114267739A (zh) * 2022-01-05 2022-04-01 北京昕感科技有限责任公司 一种双沟槽型SiC MOSFET元胞结构、器件及制造方法
US12419089B2 (en) * 2022-05-27 2025-09-16 Fast SiC Semiconductor Incorporated Silicon carbide semiconductor device
CN115224111A (zh) * 2022-07-26 2022-10-21 中芯越州集成电路制造(绍兴)有限公司 沟槽栅器件的制备方法及沟槽栅器件
CN119586348A (zh) * 2022-07-29 2025-03-07 三菱电机株式会社 半导体装置、电力变换装置以及半导体装置的制造方法
CN115084247A (zh) * 2022-08-22 2022-09-20 泰科天润半导体科技（北京）有限公司 一种双沟槽型碳化硅mosfet的制造方法
CN115241277B (zh) * 2022-09-22 2023-01-10 深圳芯能半导体技术有限公司 一种隔离型沟槽mos器件及其制备方法
CN116799036B (zh) * 2023-06-11 2026-03-31 湖北九峰山实验室 宽禁带半导体沟槽mosfet器件结构及其制作方法
US20250133769A1 (en) * 2023-10-24 2025-04-24 Taipei Anjet Corporation Three-dimensional (3d) trenched metal-oxide-semiconductor field-effect transistor (mosfet) device and method for fabricating the same
CN117894846B (zh) * 2023-12-28 2024-07-19 南京第三代半导体技术创新中心有限公司 低功耗平面栅型碳化硅mosfet功率器件及其制造方法
CN119092547A (zh) * 2024-08-30 2024-12-06 长飞先进半导体(武汉)有限公司 功率器件及制备方法、功率模块、功率转换电路和车辆
CN119208383B (zh) * 2024-11-26 2025-05-02 安徽长飞先进半导体股份有限公司 半导体器件及制备方法、功率模块、功率转换电路和车辆

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