CN110473903B - 碳化硅半导体装置、电力变换装置以及碳化硅半导体装置的制造方法 - Google Patents

碳化硅半导体装置、电力变换装置以及碳化硅半导体装置的制造方法 Download PDF

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CN110473903B
CN110473903B CN201910363080.XA CN201910363080A CN110473903B CN 110473903 B CN110473903 B CN 110473903B CN 201910363080 A CN201910363080 A CN 201910363080A CN 110473903 B CN110473903 B CN 110473903B
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silicon carbide
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electric field
gate trench
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CN110473903A (zh
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海老池勇史
香川泰宏
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Mitsubishi Electric Corp
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  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
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CN201910363080.XA 2018-05-09 2019-04-30 碳化硅半导体装置、电力变换装置以及碳化硅半导体装置的制造方法 Active CN110473903B (zh)

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JP2018-090470 2018-05-09
JP2018090470A JP7068916B2 (ja) 2018-05-09 2018-05-09 炭化珪素半導体装置、電力変換装置、および炭化珪素半導体装置の製造方法

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JP7354868B2 (ja) * 2020-02-13 2023-10-03 株式会社デンソー スイッチング素子
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US11961903B2 (en) * 2020-05-26 2024-04-16 Hyundai Mobis Co., Ltd. Power semiconductor device and method of fabricating the same
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CN115084247A (zh) * 2022-08-22 2022-09-20 泰科天润半导体科技（北京）有限公司 一种双沟槽型碳化硅mosfet的制造方法
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