DE102015103318B4 - Halbleiter-Bauelement mit einer Passivierungsschicht und Verfahren zum Herstellen eines solchen - Google Patents

Halbleiter-Bauelement mit einer Passivierungsschicht und Verfahren zum Herstellen eines solchen Download PDF

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DE102015103318B4
DE102015103318B4 DE102015103318.6A DE102015103318A DE102015103318B4 DE 102015103318 B4 DE102015103318 B4 DE 102015103318B4 DE 102015103318 A DE102015103318 A DE 102015103318A DE 102015103318 B4 DE102015103318 B4 DE 102015103318B4
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layer
region
semiconductor component
contact electrode
semiconductor
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DE102015103318A1 (de
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Christian Hecht
Andre Kabakow
Roland Rupp
Jens Peter Konrath
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Infineon Technologies AG
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Infineon Technologies AG
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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