US20220189840A1 - Passivation layer for an integrated circuit device that provides a moisture and proton barrier - Google Patents

Passivation layer for an integrated circuit device that provides a moisture and proton barrier Download PDF

Info

Publication number
US20220189840A1
US20220189840A1 US17/518,215 US202117518215A US2022189840A1 US 20220189840 A1 US20220189840 A1 US 20220189840A1 US 202117518215 A US202117518215 A US 202117518215A US 2022189840 A1 US2022189840 A1 US 2022189840A1
Authority
US
United States
Prior art keywords
layer
integrated circuit
circuit device
contact
metal contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US17/518,215
Inventor
Eng Hui GOH
Voon Cheng NGWAN
Fadhillawati TAHIR
Ditto ADNAN
Boon Kiat TUNG
Maurizio Gabriele Castorina
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Pte Ltd
Original Assignee
STMicroelectronics Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Pte Ltd filed Critical STMicroelectronics Pte Ltd
Priority to US17/518,215 priority Critical patent/US20220189840A1/en
Priority to EP21213157.7A priority patent/EP4016606A1/en
Priority to CN202123155376.4U priority patent/CN216957997U/en
Priority to CN202111539324.9A priority patent/CN114639641A/en
Publication of US20220189840A1 publication Critical patent/US20220189840A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3192—Multilayer coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/564—Details not otherwise provided for, e.g. protection against moisture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05155—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05166—Titanium [Ti] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05172—Vanadium [V] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05567—Disposition the external layer being at least partially embedded in the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05639—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05647—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/06181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Definitions

  • the present invention generally relates to integrated circuit devices and, in particular, to a passivation layer for such an integrated circuit device that provides a barrier against a contaminant, such as moisture and proton, intrusion.
  • FIG. 1 shows a cross-section of a portion of an integrated circuit device 10 .
  • the illustrated device in this embodiment is a discrete power transistor of, for example, a vertical gate n-channel MOSFET type.
  • a semiconductor substrate 12 is lightly doped with a first-type dopant (for example, N-type).
  • the semiconductor substrate 12 includes a top surface 14 and a bottom surface 16 .
  • a peripheral edge surface 18 of the semiconductor substrate 12 joins the top surface 14 and bottom surface 16 .
  • the semiconductor substrate 12 forms the drain region of the discrete power transistor.
  • a metal layer 58 at the bottom surface 16 provides the drain (D) electrical contact.
  • the metal layer 58 may, for example, be made of a stack of layers including: a Titanium (Ti) layer; a Nickel (Ni) or alloy of Nickel and Vanadium (NiV) layer; and a Silver (Ag) or Gold (Au) layer.
  • a plurality of trenches 20 extend into the semiconductor substrate 12 from the top surface 14 .
  • the trenches 20 have a depth which is less than a thickness of the semiconductor substrate 12 .
  • each trench 20 has a width (extending in the plane of the cross-section) and a length (extending perpendicular to the width and in a plane into and out of the cross-section). In an embodiment, the length is substantially greater than the width, and thus each trench 20 is a strip trench extending into and out of the cross-section and having a rectangular shape in top view.
  • Each trench 20 is lined by an insulating liner 22 , with the remainder of each trench filled by an electrical conductor 24 forming the gate electrode of the discrete power transistor.
  • the insulating liner 22 is made of a dielectric material, for example an oxide
  • the electrical conductor 24 is made of a conducting material, for example polysilicon (that may, if desired, be doped with a suitable dopant species/type).
  • the semiconductor substrate 12 further includes a first semiconductor well 26 that is doped with a second-type dopant (for example, P-type).
  • the first semiconductor well 26 has a depth extending from the top surface 14 which is less than the depth of the trenches 20 .
  • the first semiconductor well 26 forms the body (channel) region of the discrete power transistor.
  • the peripheral termination region PR at the perimeter of the semiconductor substrate 12 includes a second semiconductor well 27 that is doped with the second-type dopant (for example, P-type).
  • the second semiconductor well 27 has a depth extending from the top surface 14 which is greater than the depth of the trenches 20 .
  • the second semiconductor well 27 forms the ring region of the discrete power transistor.
  • the semiconductor substrate 12 further includes a semiconductor region 28 that is doped with the first-type dopant.
  • the semiconductor region 28 has a depth extending from the top surface 14 which is less than the depth of the semiconductor well 26 .
  • the semiconductor region 28 forms the source region of the discrete power transistor.
  • the semiconductor region 28 does not extend across the entire top surface 14 of the semiconductor substrate 12 , but rather is present only in an active region AR corresponding generally to the area where the trenches 20 are present.
  • a field oxide region 30 is provided at the top surface 14 of the semiconductor substrate 12 in the peripheral region PR outside of the active region AR and adjacent the peripheral edge surface 18 .
  • This field oxide region 30 may, for example, surround the active region AR.
  • a premetallization dielectric layer 32 is deposited to cover the top surface 14 of the semiconductor substrate 12 and the oxide region 30 .
  • the premetallization dielectric layer 32 may be made of a dielectric material such as, for example, tetraethyl orthosilicate (tetraethoxysilane—TEOS).
  • TEOS tetraethyl orthosilicate
  • the premetallization dielectric layer 32 may comprise a stack of layers including a TEOS layer covering the top surface 14 of the semiconductor substrate 12 and the oxide region 30 and a Boron and Phosphorus doped TEOS (BPTEOS) layer covering the TEOS layer.
  • BPTEOS Boron and Phosphorus doped TEOS
  • the premetallization dielectric layer 32 may comprise a stack of layers including a TEOS layer covering the top surface 14 of the semiconductor substrate 12 and the oxide region 30 and a Phosphorus doped TEOS (PTEOS) layer covering the TEOS layer.
  • PTEOS Phosphorus doped TEOS
  • a plurality of trenches 34 extend through the premetallization dielectric layer 32 and into the semiconductor substrate 12 .
  • the trenches 34 have a depth which is less than the depth of the semiconductor well 26 and greater than the depth of the semiconductor region 28 .
  • the trenches 34 extend fully through the premetallization dielectric layer 32 and the semiconductor region 28 and partially into the semiconductor well 26 .
  • each trench 34 has a width (extending in the plane of the cross-section) and a length (extending perpendicular to the width and extending in a plane into and out of the cross-section).
  • the length is substantially greater than the width, and thus each trench 34 is a strip trench extending into and out of the cross-section and having a rectangular shape in top view.
  • Each trench 34 is located between (and extends parallel to) two trenches 20 .
  • the upper surface of the premetallization dielectric layer 32 and the sidewalls and bottom of each trench 34 are lined with a stack of layers 36 comprising, for example, a thin metal layer and a thin metal nitride layer.
  • the thin metal layer may, for example, be made of Titanium
  • the thin metal nitride layer may, for example, be made of a Titanium Nitride (TiN) material.
  • the remainder of each trench 34 filled by an electrical conductor 38 forming the source and body contact of the discrete power transistor.
  • the electrical conductor 38 may, for example, be made of a Tungsten (W) material.
  • a first metal layer 42 is deposited over the thin metal nitride layer 36 .
  • This first metal layer 42 may, for example, be made of Titanium (Ti).
  • a second metal layer 44 is deposited over the first metal layer 42 .
  • the second metal layer 44 may, for example, be made of Aluminum (Al) or an alloy of Copper and Aluminum (AlCu).
  • the second metal layer 44 , first metal layer 42 and the metal/metal nitride layer stack 36 are lithographically patterned to define a source (S) electrical contact 46 and a gate (G) electrical contact 48 .
  • the lithographic patterning exposes an upper surface of the premetallization dielectric layer 32 in areas where the source (S) electrical contact 46 and gate (G) electrical contact 48 are not present.
  • a passivation layer 50 is deposited over the source (S) electrical contact 46 , the gate (G) electrical contact 48 and the exposed upper surface of the premetallization dielectric layer 32 . Detail of the passivation layer 50 configuration at the source (S) electrical contact 46 and gate (G) electrical contact 48 is shown in FIG. 2 .
  • the passivation layer 50 may comprise a TEOS layer 50 a , or a Silicon Nitride (SiN) layer 50 b , or a stack of layers including the TEOS layer 50 a and the Silicon Nitride (SiN) layer 50 b .
  • the TEOS layer 50 a may, for example, have a thickness of about 10,000 ⁇ and the SiN layer 50 b may, for example, have a thickness of about 10,000 ⁇ .
  • the passivation layer 50 is lithographically patterned to form openings exposing an upper surface of the source (S) electrical contact 46 and gate (G) electrical contact 48 .
  • the passivation layer 50 is provided to inhibit a contaminant (such as moisture and proton) intrusion.
  • a contaminant such as moisture and proton
  • stress can cause cracks to form in the passivation layer 50 .
  • Contaminants can enter through the cracks and contribute to device failure.
  • moisture penetration can lead to temperature humidity bias (THB) reliability failure and proton intrusion can cause high temperature reverse bias (HTRB) reliability failure.
  • TTB temperature humidity bias
  • HTRB high temperature reverse bias
  • an integrated circuit device comprises: a metal contact having a top surface and a sidewall, the top surface of the metal contact including a first surface portion, a second surface portion and a third surface portion; and a passivation layer extending on the sidewall of the metal contact and on the first and second surface portions of the top surface of the metal contact.
  • the passivation layer comprises a stack of layers including: a tetraethyl orthosilicate (TEOS) layer; a Phosphorus doped TEOS (PTEOS) layer on top of the TEOS layer; and a high-density Silicon-rich Nitride layer on top of the PTEOS layer.
  • TEOS tetraethyl orthosilicate
  • PTEOS Phosphorus doped TEOS
  • high-density Silicon-rich Nitride layer on top of the PTEOS layer.
  • the TEOS and PTEOS layers extend over the first surface portion of the top surface of the metal contact, but not over the second and third surface portions of the top surface of the metal contact.
  • the high-density Silicon-rich Nitride layer extends over the first and second surface portions of the top surface of the metal contact, but not over the third surface portion of the top surface of the metal contact.
  • FIG. 1 shows a cross-section of a portion of an integrated circuit device
  • FIG. 2 shows detail of a passivation layer configuration at a source electrical contact and a gate electrical contact of the integrated circuit device of FIG. 1 ;
  • FIG. 3 shows detail of a passivation layer configuration at the source electrical contact and the gate electrical contact of the integrated circuit device of FIG. 1 ;
  • FIG. 4 shows a scanning electron micrograph of an example of the passivation layer configuration
  • FIGS. 5A-5E show steps of a fabrication process for making the passivation layer configuration of FIGS. 3 and 4 ;
  • FIG. 6 shows detail of a passivation layer configuration at the source electrical contact and the gate electrical contact of the integrated circuit device of FIG. 1 ;
  • FIG. 7 illustrates a relationship between N/Si ratio and refractive index for Si-rich silicon nitride material
  • FIGS. 8A-8C show cross-sections of other integrated circuit devices utilizing the passivation layer configuration.
  • the passivation layer 50 ′ comprises a stack of layers including: a TEOS layer 50 a ′, a Phosphorus doped TEOS (PTEOS) layer 50 b ′ covering the TEOS layer 50 a ′, and a Silicon Nitride (SiN) layer 50 c ′.
  • PTEOS Phosphorus doped TEOS
  • SiN Silicon Nitride
  • the TEOS layer 50 a ′ may, for example, have a thickness in a range of about 12,000-16,000 ⁇
  • the PTEOS layer 50 b ′ may, for example, have a thickness in a range of about 4,000-6,000 ⁇
  • the SiN layer 50 c ′ may, for example, have a thickness in a range of about 8,000-12,000 ⁇ .
  • adhesion of the SiN layer 50 c ′ on the metal layer 44 may be enhanced by the use of a thin Silicon flash layer 70 between the PTEOS layer 50 b ′ and the SiN layer 50 c ′.
  • the Silicon flash layer 70 may, for example, have a thickness of less than 100 ⁇ .
  • the passivation layer 50 ′ is lithographically patterned to form openings exposing an upper surface of the source (S) electrical contact 46 and gate (G) electrical contact 48 .
  • the TEOS layer 50 a ′ provides a layer made of a material that is softer than Silicon Nitride to provide a stress relieving structure and also presents a good adhesion property with respect to the Aluminum material of the second metal layer 44 .
  • the TEOS layer 50 a ′ also provides a diffusion barrier that inhibits the diffusion of Phosphorus from the PTEOS layer 50 b ′.
  • the PTEOS layer 50 b ′ functions as a gettering layer presenting a proton H+ gettering center.
  • the SiN layer 50 c ′ is preferably implemented as a high-density Silicon-rich Nitride (referred to in the art as a “Yellow Nitride”) and functions as a moisture resistant barrier which inhibits penetration of contaminants such as proton H+ and moisture.
  • FIG. 4 shows a scanning electron micrograph of an example of the passivation layer 50 ′ configuration relative to a contact (C) made of Aluminum.
  • All three layers 50 a ′, 50 b ′ and 50 c ′ of the stack for the passivation layer 50 ′ extend over the exposed upper surface of the premetallization dielectric layer 32 in areas where the source (S) electrical contact 46 and gate (G) electrical contact 48 are not present (see, right side). All three layers 50 a ′, 50 b ′ and 50 c ′ of the stack for the passivation layer 50 ′ further extend over sidewalls (S) of the contact C (i.e., on the side edge surfaces of the lithographically patterned layers 42 and 44 ).
  • the three layers 50 a ′, 50 b ′ and 50 c ′ of the stack for the passivation layer 50 ′ further extend over a first surface portion 52 of the top surface of the contact C (i.e., on the top surface of the lithographically patterned layer 44 ). However, only the SiN layer 50 c ′ extends over a second surface portion 54 of the top surface of the contact C.
  • the SiN layer 50 c ′ (along with flash layer 70 , when present) extends on side edge surfaces of the layers 50 a ′, 50 b ′ at a transition from the first surface portion 52 to the second surface portion 54 .
  • a third surface portion 56 of the top surface of the contact C is not covered by any of the passivation layer 50 ′. Additionally, the SiN layer 50 c ′ extends over sidewalls S 1 of the layers 50 a ′, 50 b′.
  • Fabrication of the passivation layer 50 ′ requires the use of two masks in lithographically patterning the three layers 50 a ′, 50 b ′ and 50 c ′ (plus layer 70 , if present) of the stack.
  • the steps of the fabrication process are shown by FIGS. 5A-5E .
  • the layers 50 a ′, 50 b ′ are deposited over the metal contact C ( 44 ).
  • the layers 50 a ′ and 50 b ′ may, for example, be deposited using plasma-enhanced chemical vapor deposition (PECVD).
  • PECVD plasma-enhanced chemical vapor deposition
  • FIG. 5B a first mask 60 is formed from a developed photoresist. The first mask 60 covers the first surface portion 52 of the top surface of the metal contact.
  • the layer 50 c ′ (with interposed Silicon flash layer 70 , see FIG. 6 , if desired) is conformally deposited to cover the patterned layers 50 a ′, 50 b ′ as well as the second and third surface portions 54 and 56 of the top surface of the metal contact.
  • the layer 50 c ′ and may, for example, be deposited using SiH 4 -based plasma-enhanced chemical vapor deposition (PECVD).
  • the stoichiometry of the SiN layer 50 c ′ may, for example, comprise Si x N y where the bond ratio x:y, for example, determinable by analysis techniques such as R-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIS) or Rutherford backscattering (RBS) showing a N/Si ratio that is less than about 1.3 (or x:y greater than 3:4) and a refractive index, for example measured by the optical ellipsometry method, that is greater than 2 (see, FIG. 7 ).
  • a second mask 62 is formed from a developed photoresist.
  • the second mask 62 covers the first and second surface portions 52 and 54 of the top surface of the metal contact. An etch is then performed to remove portions of the layer 50 c ′ which is not covered by the second mask 62 so as to provide a contact opening 64 over the third surface portion 56 of the top surface of the metal contact. The second mask 62 is then removed. The result is shown in FIG. 5E .
  • FIGS. 3 and 6 show use of the passivation layer 50 ′ in connection with a power MOSFET transistor, it will be understood that the passivation layer 50 ′ may be used in connection with the metal contact/bonding pad of any suitable integrated circuit device.
  • suitable integrated circuit device examples include, but are not limited to, a shielded gate trench power MOSFET ( FIG. 8A ) where the passivation is provided at a source and/or a gate contact, a trench gate field stop IGBT ( FIG. 8B ) where the passivation is provided at an emitter and/or gate contact, a superjunction MOSFET ( FIG. 8C ) where the passivation is provided at a source and/or gate contact, and a power diode where the passivation is provided at an anode and/or cathode contact.
  • FIG. 8A shielded gate trench power MOSFET
  • FIG. 8B trench gate field stop IGBT
  • FIG. 8C superjunction MOSFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

An integrated circuit device includes a metal contact and a passivation layer extending on a sidewall of the metal contact and on first and second surface portions of a top surface of the metal contact. The passivation layer is format by a stack of layers including: a tetraethyl orthosilicate (TEOS) layer; a Phosphorus doped TEOS (PTEOS) layer on top of the TEOS layer; and a Silicon-rich Nitride layer on top of the PTEOS layer. The TEOS and PTEOS layers extend over the first surface portion, but not the second surface portion, of the top surface of the metal contact. The Silicon-rich Nitride layer extends over both the first and second surface portions, and is in contact with the second surface portion.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • This application claims priority from United States Provisional Application for Patent No. 63/126,096, filed Dec. 16, 2020, the disclosure of which is incorporated herein by reference.
    • TECHNICAL FIELD
  • The present invention generally relates to integrated circuit devices and, in particular, to a passivation layer for such an integrated circuit device that provides a barrier against a contaminant, such as moisture and proton, intrusion.
    • BACKGROUND
  • Reference is made to FIG. 1 which shows a cross-section of a portion of an integrated circuit device 10. The illustrated device in this embodiment is a discrete power transistor of, for example, a vertical gate n-channel MOSFET type.
  • A semiconductor substrate 12 is lightly doped with a first-type dopant (for example, N-type). The semiconductor substrate 12 includes a top surface 14 and a bottom surface 16. A peripheral edge surface 18 of the semiconductor substrate 12 joins the top surface 14 and bottom surface 16. The semiconductor substrate 12 forms the drain region of the discrete power transistor. A metal layer 58 at the bottom surface 16 provides the drain (D) electrical contact. The metal layer 58 may, for example, be made of a stack of layers including: a Titanium (Ti) layer; a Nickel (Ni) or alloy of Nickel and Vanadium (NiV) layer; and a Silver (Ag) or Gold (Au) layer.
  • A plurality of trenches 20 extend into the semiconductor substrate 12 from the top surface 14. The trenches 20 have a depth which is less than a thickness of the semiconductor substrate 12. In an embodiment, each trench 20 has a width (extending in the plane of the cross-section) and a length (extending perpendicular to the width and in a plane into and out of the cross-section). In an embodiment, the length is substantially greater than the width, and thus each trench 20 is a strip trench extending into and out of the cross-section and having a rectangular shape in top view. Each trench 20 is lined by an insulating liner 22, with the remainder of each trench filled by an electrical conductor 24 forming the gate electrode of the discrete power transistor. In an embodiment, the insulating liner 22 is made of a dielectric material, for example an oxide, and the electrical conductor 24 is made of a conducting material, for example polysilicon (that may, if desired, be doped with a suitable dopant species/type).
  • The semiconductor substrate 12 further includes a first semiconductor well 26 that is doped with a second-type dopant (for example, P-type). The first semiconductor well 26 has a depth extending from the top surface 14 which is less than the depth of the trenches 20. The first semiconductor well 26 forms the body (channel) region of the discrete power transistor.
  • The peripheral termination region PR at the perimeter of the semiconductor substrate 12 includes a second semiconductor well 27 that is doped with the second-type dopant (for example, P-type). The second semiconductor well 27 has a depth extending from the top surface 14 which is greater than the depth of the trenches 20. The second semiconductor well 27 forms the ring region of the discrete power transistor.
  • The semiconductor substrate 12 further includes a semiconductor region 28 that is doped with the first-type dopant. The semiconductor region 28 has a depth extending from the top surface 14 which is less than the depth of the semiconductor well 26. The semiconductor region 28 forms the source region of the discrete power transistor. The semiconductor region 28 does not extend across the entire top surface 14 of the semiconductor substrate 12, but rather is present only in an active region AR corresponding generally to the area where the trenches 20 are present.
  • A field oxide region 30 is provided at the top surface 14 of the semiconductor substrate 12 in the peripheral region PR outside of the active region AR and adjacent the peripheral edge surface 18. This field oxide region 30 may, for example, surround the active region AR.
  • A premetallization dielectric layer 32 is deposited to cover the top surface 14 of the semiconductor substrate 12 and the oxide region 30. The premetallization dielectric layer 32 may be made of a dielectric material such as, for example, tetraethyl orthosilicate (tetraethoxysilane—TEOS). In an embodiment, the premetallization dielectric layer 32 may comprise a stack of layers including a TEOS layer covering the top surface 14 of the semiconductor substrate 12 and the oxide region 30 and a Boron and Phosphorus doped TEOS (BPTEOS) layer covering the TEOS layer. In another embodiment, the premetallization dielectric layer 32 may comprise a stack of layers including a TEOS layer covering the top surface 14 of the semiconductor substrate 12 and the oxide region 30 and a Phosphorus doped TEOS (PTEOS) layer covering the TEOS layer.
  • A plurality of trenches 34 extend through the premetallization dielectric layer 32 and into the semiconductor substrate 12. The trenches 34 have a depth which is less than the depth of the semiconductor well 26 and greater than the depth of the semiconductor region 28. Thus, the trenches 34 extend fully through the premetallization dielectric layer 32 and the semiconductor region 28 and partially into the semiconductor well 26. In an embodiment, each trench 34 has a width (extending in the plane of the cross-section) and a length (extending perpendicular to the width and extending in a plane into and out of the cross-section). In an embodiment, the length is substantially greater than the width, and thus each trench 34 is a strip trench extending into and out of the cross-section and having a rectangular shape in top view. Each trench 34 is located between (and extends parallel to) two trenches 20. The upper surface of the premetallization dielectric layer 32 and the sidewalls and bottom of each trench 34 are lined with a stack of layers 36 comprising, for example, a thin metal layer and a thin metal nitride layer. The thin metal layer may, for example, be made of Titanium, and the thin metal nitride layer may, for example, be made of a Titanium Nitride (TiN) material. The remainder of each trench 34 filled by an electrical conductor 38 forming the source and body contact of the discrete power transistor. The electrical conductor 38 may, for example, be made of a Tungsten (W) material.
  • A first metal layer 42 is deposited over the thin metal nitride layer 36. This first metal layer 42 may, for example, be made of Titanium (Ti).
  • A second metal layer 44 is deposited over the first metal layer 42. The second metal layer 44 may, for example, be made of Aluminum (Al) or an alloy of Copper and Aluminum (AlCu).
  • The second metal layer 44, first metal layer 42 and the metal/metal nitride layer stack 36 are lithographically patterned to define a source (S) electrical contact 46 and a gate (G) electrical contact 48.
  • The lithographic patterning exposes an upper surface of the premetallization dielectric layer 32 in areas where the source (S) electrical contact 46 and gate (G) electrical contact 48 are not present. A passivation layer 50 is deposited over the source (S) electrical contact 46, the gate (G) electrical contact 48 and the exposed upper surface of the premetallization dielectric layer 32. Detail of the passivation layer 50 configuration at the source (S) electrical contact 46 and gate (G) electrical contact 48 is shown in FIG. 2. In an embodiment, the passivation layer 50 may comprise a TEOS layer 50 a, or a Silicon Nitride (SiN) layer 50 b, or a stack of layers including the TEOS layer 50 a and the Silicon Nitride (SiN) layer 50 b. The TEOS layer 50 a may, for example, have a thickness of about 10,000 Å and the SiN layer 50 b may, for example, have a thickness of about 10,000 Å. The passivation layer 50 is lithographically patterned to form openings exposing an upper surface of the source (S) electrical contact 46 and gate (G) electrical contact 48.
  • The passivation layer 50 is provided to inhibit a contaminant (such as moisture and proton) intrusion. However, stress can cause cracks to form in the passivation layer 50. Contaminants can enter through the cracks and contribute to device failure. For example, moisture penetration can lead to temperature humidity bias (THB) reliability failure and proton intrusion can cause high temperature reverse bias (HTRB) reliability failure.
  • There is a need in the art for a passivation layer that can provide for an improved barrier against a contaminant, such as moisture and proton, intrusion.
    • SUMMARY
  • In an embodiment, an integrated circuit device comprises: a metal contact having a top surface and a sidewall, the top surface of the metal contact including a first surface portion, a second surface portion and a third surface portion; and a passivation layer extending on the sidewall of the metal contact and on the first and second surface portions of the top surface of the metal contact.
  • The passivation layer comprises a stack of layers including: a tetraethyl orthosilicate (TEOS) layer; a Phosphorus doped TEOS (PTEOS) layer on top of the TEOS layer; and a high-density Silicon-rich Nitride layer on top of the PTEOS layer.
  • The TEOS and PTEOS layers extend over the first surface portion of the top surface of the metal contact, but not over the second and third surface portions of the top surface of the metal contact.
  • The high-density Silicon-rich Nitride layer extends over the first and second surface portions of the top surface of the metal contact, but not over the third surface portion of the top surface of the metal contact.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • For a better understanding of the embodiments, reference will now be made by way of example only to the accompanying figures in which:
  • FIG. 1 shows a cross-section of a portion of an integrated circuit device;
  • FIG. 2 shows detail of a passivation layer configuration at a source electrical contact and a gate electrical contact of the integrated circuit device of FIG. 1;
  • FIG. 3 shows detail of a passivation layer configuration at the source electrical contact and the gate electrical contact of the integrated circuit device of FIG. 1;
  • FIG. 4 shows a scanning electron micrograph of an example of the passivation layer configuration;
  • FIGS. 5A-5E show steps of a fabrication process for making the passivation layer configuration of FIGS. 3 and 4;
  • FIG. 6 shows detail of a passivation layer configuration at the source electrical contact and the gate electrical contact of the integrated circuit device of FIG. 1;
  • FIG. 7 illustrates a relationship between N/Si ratio and refractive index for Si-rich silicon nitride material; and
  • FIGS. 8A-8C show cross-sections of other integrated circuit devices utilizing the passivation layer configuration.
    •  DETAILED DESCRIPTION
  • Reference is now made to FIGS. 3 and 6 which show detail of a passivation layer 50′ configuration at the source electrical contact 46 and the gate electrical contact 48 of the integrated circuit device of FIG. 1. In this embodiment, the passivation layer 50′ comprises a stack of layers including: a TEOS layer 50 a′, a Phosphorus doped TEOS (PTEOS) layer 50 b′ covering the TEOS layer 50 a′, and a Silicon Nitride (SiN) layer 50 c′. The TEOS layer 50 a′ may, for example, have a thickness in a range of about 12,000-16,000 Å, the PTEOS layer 50 b′ may, for example, have a thickness in a range of about 4,000-6,000 Å, and the SiN layer 50 c′ may, for example, have a thickness in a range of about 8,000-12,000 Å. In the implementation as shown in FIG. 6, adhesion of the SiN layer 50 c′ on the metal layer 44 may be enhanced by the use of a thin Silicon flash layer 70 between the PTEOS layer 50 b′ and the SiN layer 50 c′. The Silicon flash layer 70 may, for example, have a thickness of less than 100 Å. The passivation layer 50′ is lithographically patterned to form openings exposing an upper surface of the source (S) electrical contact 46 and gate (G) electrical contact 48.
  • The TEOS layer 50 a′ provides a layer made of a material that is softer than Silicon Nitride to provide a stress relieving structure and also presents a good adhesion property with respect to the Aluminum material of the second metal layer 44. The TEOS layer 50 a′ also provides a diffusion barrier that inhibits the diffusion of Phosphorus from the PTEOS layer 50 b′. The PTEOS layer 50 b′ functions as a gettering layer presenting a proton H+ gettering center. The SiN layer 50 c′ is preferably implemented as a high-density Silicon-rich Nitride (referred to in the art as a “Yellow Nitride”) and functions as a moisture resistant barrier which inhibits penetration of contaminants such as proton H+ and moisture.
  • FIG. 4 shows a scanning electron micrograph of an example of the passivation layer 50′ configuration relative to a contact (C) made of Aluminum.
  • All three layers 50 a′, 50 b′ and 50 c′ of the stack for the passivation layer 50′ extend over the exposed upper surface of the premetallization dielectric layer 32 in areas where the source (S) electrical contact 46 and gate (G) electrical contact 48 are not present (see, right side). All three layers 50 a′, 50 b′ and 50 c′ of the stack for the passivation layer 50′ further extend over sidewalls (S) of the contact C (i.e., on the side edge surfaces of the lithographically patterned layers 42 and 44). The three layers 50 a′, 50 b′ and 50 c′ of the stack for the passivation layer 50′ further extend over a first surface portion 52 of the top surface of the contact C (i.e., on the top surface of the lithographically patterned layer 44). However, only the SiN layer 50 c′ extends over a second surface portion 54 of the top surface of the contact C. The SiN layer 50 c′ (along with flash layer 70, when present) extends on side edge surfaces of the layers 50 a′, 50 b′ at a transition from the first surface portion 52 to the second surface portion 54. A third surface portion 56 of the top surface of the contact C is not covered by any of the passivation layer 50′. Additionally, the SiN layer 50 c′ extends over sidewalls S1 of the layers 50 a′, 50 b′.
  • Fabrication of the passivation layer 50′ requires the use of two masks in lithographically patterning the three layers 50 a′, 50 b′ and 50 c′ (plus layer 70, if present) of the stack. The steps of the fabrication process are shown by FIGS. 5A-5E. In FIG. 5A, the layers 50 a′, 50 b′ are deposited over the metal contact C (44). The layers 50 a′ and 50 b′ may, for example, be deposited using plasma-enhanced chemical vapor deposition (PECVD). In FIG. 5B, a first mask 60 is formed from a developed photoresist. The first mask 60 covers the first surface portion 52 of the top surface of the metal contact. An etch is then performed to remove portions of the layers 50 a′, 50 b′ which are not covered by the first mask 60. The first mask 60 is then removed. In FIG. 5C, the layer 50 c′ (with interposed Silicon flash layer 70, see FIG. 6, if desired) is conformally deposited to cover the patterned layers 50 a′, 50 b′ as well as the second and third surface portions 54 and 56 of the top surface of the metal contact. The layer 50 c′ and may, for example, be deposited using SiH4-based plasma-enhanced chemical vapor deposition (PECVD). The stoichiometry of the SiN layer 50 c′ may, for example, comprise SixNy where the bond ratio x:y, for example, determinable by analysis techniques such as R-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIS) or Rutherford backscattering (RBS) showing a N/Si ratio that is less than about 1.3 (or x:y greater than 3:4) and a refractive index, for example measured by the optical ellipsometry method, that is greater than 2 (see, FIG. 7). In FIG. 5D, a second mask 62 is formed from a developed photoresist. The second mask 62 covers the first and second surface portions 52 and 54 of the top surface of the metal contact. An etch is then performed to remove portions of the layer 50 c′ which is not covered by the second mask 62 so as to provide a contact opening 64 over the third surface portion 56 of the top surface of the metal contact. The second mask 62 is then removed. The result is shown in FIG. 5E.
  • Although FIGS. 3 and 6 show use of the passivation layer 50′ in connection with a power MOSFET transistor, it will be understood that the passivation layer 50′ may be used in connection with the metal contact/bonding pad of any suitable integrated circuit device. Examples of such devices include, but are not limited to, a shielded gate trench power MOSFET (FIG. 8A) where the passivation is provided at a source and/or a gate contact, a trench gate field stop IGBT (FIG. 8B) where the passivation is provided at an emitter and/or gate contact, a superjunction MOSFET (FIG. 8C) where the passivation is provided at a source and/or gate contact, and a power diode where the passivation is provided at an anode and/or cathode contact.
  • While the invention has been illustrated and described in detail in the drawings and foregoing description, such illustration and description are considered illustrative or exemplary and not restrictive; the invention is not limited to the disclosed embodiments. Other variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed invention, from a study of the drawings, the disclosure, and the appended claims.

Claims (22)

What is claimed is:
1. An integrated circuit device, comprising:
a metal contact having a top surface, the top surface of the metal contact including a first surface portion, a second surface portion and a third surface portion; and
a passivation layer extending on the first and second surface portions of the top surface of the metal contact;
wherein the passivation layer comprises a stack of layers including:
a tetraethyl orthosilicate (TEOS) layer;
a Phosphorus doped TEOS (PTEOS) layer on top of the TEOS layer; and
a high-density Silicon-rich Nitride layer on top of the PTEOS layer;
wherein the TEOS and PTEOS layers extend over the first surface portion of the top surface of the metal contact, but not over the second and third surface portions of the top surface of the metal contact; and
wherein the high-density Silicon-rich Nitride layer extends over the first and second surface portions of the top surface of the metal contact, but not over the third surface portion of the top surface of the metal contact.
2. The integrated circuit device of claim 1, wherein the high-density Silicon-rich Nitride layer is in contact with the second surface portion of the top surface of the metal contact.
3. The integrated circuit device of claim 1, wherein the high-density Silicon-rich Nitride layer is in contact with side edge surfaces of the TEOS and PTEOS layers at a transition from the first surface portion to the second surface portion.
4. The integrated circuit device of claim 1, wherein the TEOS layer is in contact with the first surface portion of the top surface of the metal contact.
5. The integrated circuit device of claim 1, further comprising a Silicon flash layer in the stack of layers for the passivation layer, wherein said Silicon flash layer is positioned between the PTEOS layer and the high-density Silicon-rich Nitride layer.
6. The integrated circuit device of claim 5, wherein the Silicon flash layer has a thickness of less than 100 Å.
7. The integrated circuit device of claim 5, wherein the Silicon flash layer is in contact with the second surface portion of the top surface of the metal contact.
8. The integrated circuit device of claim 5, wherein the Silicon flash layer is in contact with side edge surfaces of the TEOS and PTEOS layers at a transition from the first surface portion to the second surface portion.
9. The integrated circuit device of claim 5, wherein the high-density Silicon-rich Nitride layer is in contact with the Silicon flash layer.
10. The integrated circuit device of claim 1, wherein the TEOS layer has a thickness in a range of about 12,000-16,000 Å.
11. The integrated circuit device of claim 1, wherein the PTEOS layer has a thickness in a range of about 4,000-6,000 Å.
12. The integrated circuit device of claim 1, wherein the high-density Silicon-rich Nitride layer has a thickness in a range of about 8,000-12,000 Å.
13. The integrated circuit device of claim 1, wherein the high-density Silicon-rich Nitride layer has a ratio of N/Si that is less than about 1.3 and the high-density Silicon-rich Nitride layer has a refractive index greater than 2.
14. The integrated circuit device of claim 1, wherein a stoichiometry of the high-density Silicon-rich Nitride layer comprises SixNy where x:y is greater than or equal to 3:4 and the high-density Silicon-rich Nitride layer has a refractive index greater than 2.
15. The integrated circuit device of claim 1, wherein the metal contact extends over a premetallization dielectric layer.
16. The integrated circuit device of claim 12, wherein the premetallization dielectric layer is formed solely of TEOS.
17. The integrated circuit device of claim 1, wherein the metal contact is a gate contact of a discrete transistor.
18. The integrated circuit device of claim 1, wherein the metal contact is a source contact of a discrete transistor.
19. The integrated circuit device of claim 1, wherein the metal contact includes a sidewall, and wherein the passivation layer further extends on the sidewall of the metal contact.
20. The integrated circuit device of claim 1, wherein the metal contact is a contact for a transistor source or gate terminal.
21. The integrated circuit device of claim 1, wherein the metal contact is a contact for a transistor emitter or base terminal.
22. The integrated circuit device of claim 1, wherein the metal contact is a contact for an anode or cathode terminal of a diode.
US17/518,215 2020-12-16 2021-11-03 Passivation layer for an integrated circuit device that provides a moisture and proton barrier Abandoned US20220189840A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US17/518,215 US20220189840A1 (en) 2020-12-16 2021-11-03 Passivation layer for an integrated circuit device that provides a moisture and proton barrier
EP21213157.7A EP4016606A1 (en) 2020-12-16 2021-12-08 Passivation layer for an integrated circuit device that provides a moisture and proton barrier
CN202123155376.4U CN216957997U (en) 2020-12-16 2021-12-15 Integrated circuit device
CN202111539324.9A CN114639641A (en) 2020-12-16 2021-12-15 Passivation layer for integrated circuit device providing moisture and proton barrier

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202063126096P 2020-12-16 2020-12-16
US17/518,215 US20220189840A1 (en) 2020-12-16 2021-11-03 Passivation layer for an integrated circuit device that provides a moisture and proton barrier

Publications (1)

Publication Number Publication Date
US20220189840A1 true US20220189840A1 (en) 2022-06-16

Family

ID=79231100

Family Applications (1)

Application Number Title Priority Date Filing Date
US17/518,215 Abandoned US20220189840A1 (en) 2020-12-16 2021-11-03 Passivation layer for an integrated circuit device that provides a moisture and proton barrier

Country Status (3)

Country Link
US (1) US20220189840A1 (en)
EP (1) EP4016606A1 (en)
CN (2) CN114639641A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220189840A1 (en) * 2020-12-16 2022-06-16 Stmicroelectronics Pte Ltd Passivation layer for an integrated circuit device that provides a moisture and proton barrier

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5152546A (en) * 1974-11-02 1976-05-10 Kawasaki Heavy Ind Ltd Kyushureitokino yoryoseigyohoshiki
US20010028100A1 (en) * 1997-07-25 2001-10-11 Hughes Electronics Corporation. Passivation layer and process for semiconductor devices
US6358830B1 (en) * 1998-12-22 2002-03-19 Seiko Epson Corporation Method for manufacturing semiconductor device having interlayer dielectric film layers with like etch speeds
US20040137681A1 (en) * 2002-02-18 2004-07-15 Makoto Motoyoshi Magnetic memory device and its production method
US20100295044A1 (en) * 2009-05-20 2010-11-25 Renesas Technology Corp. Semiconductor device and method of manufacturing the same
US20190064675A1 (en) * 2017-08-25 2019-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of defect inspection
US20190326255A1 (en) * 2018-04-23 2019-10-24 Deca Technologies Inc. Fully molded semiconductor package for power devices and method of making the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5743432A (en) * 1980-08-29 1982-03-11 Fujitsu Ltd Semiconductor device
US5990513A (en) * 1996-10-08 1999-11-23 Ramtron International Corporation Yield enhancement technique for integrated circuit processing to reduce effects of undesired dielectric moisture retention and subsequent hydrogen out-diffusion
JP2003249498A (en) * 2002-02-25 2003-09-05 Toshiba Corp Method for fabricating semiconductor device
US8884405B2 (en) * 2012-06-29 2014-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. Passivation scheme
US9209102B2 (en) * 2012-06-29 2015-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Passivation structure and method of making the same
US20150255362A1 (en) * 2014-03-07 2015-09-10 Infineon Technologies Ag Semiconductor Device with a Passivation Layer and Method for Producing Thereof
JP6577899B2 (en) * 2016-03-31 2019-09-18 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device
JP6832755B2 (en) * 2017-03-14 2021-02-24 エイブリック株式会社 Semiconductor devices and methods for manufacturing semiconductor devices
DE102019131238A1 (en) * 2018-12-06 2020-06-10 Infineon Technologies Ag SEMICONDUCTOR DEVICE CONTAINING PASSIVATION STRUCTURE AND PRODUCTION METHOD
US20220189840A1 (en) * 2020-12-16 2022-06-16 Stmicroelectronics Pte Ltd Passivation layer for an integrated circuit device that provides a moisture and proton barrier

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5152546A (en) * 1974-11-02 1976-05-10 Kawasaki Heavy Ind Ltd Kyushureitokino yoryoseigyohoshiki
US20010028100A1 (en) * 1997-07-25 2001-10-11 Hughes Electronics Corporation. Passivation layer and process for semiconductor devices
US6358830B1 (en) * 1998-12-22 2002-03-19 Seiko Epson Corporation Method for manufacturing semiconductor device having interlayer dielectric film layers with like etch speeds
US20040137681A1 (en) * 2002-02-18 2004-07-15 Makoto Motoyoshi Magnetic memory device and its production method
US20100295044A1 (en) * 2009-05-20 2010-11-25 Renesas Technology Corp. Semiconductor device and method of manufacturing the same
US20190064675A1 (en) * 2017-08-25 2019-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of defect inspection
US20190326255A1 (en) * 2018-04-23 2019-10-24 Deca Technologies Inc. Fully molded semiconductor package for power devices and method of making the same

Also Published As

Publication number Publication date
EP4016606A1 (en) 2022-06-22
CN216957997U (en) 2022-07-12
CN114639641A (en) 2022-06-17

Similar Documents

Publication Publication Date Title
US9299829B2 (en) Vertical transistor component
JP4829473B2 (en) Insulated gate semiconductor device and manufacturing method thereof
US7358141B2 (en) Semiconductor device and method for fabricating the same
US9614055B2 (en) Semiconductor device and method for fabricating the same
US8004009B2 (en) Trench MOSFETS with ESD Zener diode
US9859395B2 (en) Semiconductor device with a passivation layer
US11393736B2 (en) Method of manufacturing a semiconductor device having an integrated pn diode temperature sensor
US20070034943A1 (en) Insulated gate semiconductor device and manufacturing method thereof
US20060255407A1 (en) Semiconductor device and manufacturing method of the same
US20220189840A1 (en) Passivation layer for an integrated circuit device that provides a moisture and proton barrier
JP2012244071A (en) Insulated gate type semiconductor device
JP2007287813A (en) Semiconductor device and manufacturing method therefor
US9006809B2 (en) Multi-landing contact etching
US20220199778A1 (en) Semiconductor device
US10720498B2 (en) Semiconductor device structure and method of manufacture
US11916029B2 (en) Semiconductor device
US11901446B2 (en) SiC MOSFET with transverse P+ region
JPH0220025A (en) Construction of bipolar transistor

Legal Events

Date Code Title Description
STPP Information on status: patent application and granting procedure in general

Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION