DE102015103318B4 - Halbleiter-Bauelement mit einer Passivierungsschicht und Verfahren zum Herstellen eines solchen - Google Patents

Halbleiter-Bauelement mit einer Passivierungsschicht und Verfahren zum Herstellen eines solchen Download PDF

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DE102015103318B4
DE102015103318B4 DE102015103318.6A DE102015103318A DE102015103318B4 DE 102015103318 B4 DE102015103318 B4 DE 102015103318B4 DE 102015103318 A DE102015103318 A DE 102015103318A DE 102015103318 B4 DE102015103318 B4 DE 102015103318B4
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layer
region
semiconductor component
contact electrode
semiconductor
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DE102015103318A1 (de
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Christian Hecht
Andre Kabakow
Roland Rupp
Jens Peter Konrath
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Infineon Technologies AG
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Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
DE102015103318.6A 2014-03-07 2015-03-06 Halbleiter-Bauelement mit einer Passivierungsschicht und Verfahren zum Herstellen eines solchen Active DE102015103318B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/200,732 US20150255362A1 (en) 2014-03-07 2014-03-07 Semiconductor Device with a Passivation Layer and Method for Producing Thereof
US14/200,732 2014-03-07

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DE102015103318A1 DE102015103318A1 (de) 2015-09-10
DE102015103318B4 true DE102015103318B4 (de) 2023-09-21

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JP (2) JP2015170857A (cg-RX-API-DMAC10.html)
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DE102017100109A1 (de) * 2017-01-04 2018-07-05 Infineon Technologies Ag Halbleitervorrichtung und verfahren zum herstellen derselben
JP6828472B2 (ja) 2017-02-01 2021-02-10 富士電機株式会社 半導体装置
JP6528793B2 (ja) 2017-02-22 2019-06-12 サンケン電気株式会社 半導体装置
JP6558385B2 (ja) * 2017-02-23 2019-08-14 トヨタ自動車株式会社 半導体装置の製造方法
JP6846687B2 (ja) * 2017-09-12 2021-03-24 パナソニックＩｐマネジメント株式会社 半導体装置およびその製造方法
US10332817B1 (en) 2017-12-01 2019-06-25 Cree, Inc. Semiconductor die with improved ruggedness
DE102019100130B4 (de) * 2018-04-10 2021-11-04 Infineon Technologies Ag Ein halbleiterbauelement und ein verfahren zum bilden eines halbleiterbauelements
DE102019131238B4 (de) * 2018-12-06 2025-09-18 Infineon Technologies Ag Passivierungsstruktur enthaltende halbleitervorrichtung und herstellungsverfahren
US10957664B2 (en) * 2019-05-29 2021-03-23 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
US12369381B2 (en) 2019-09-30 2025-07-22 Rohm Co., Ltd. Semiconductor device
US20220189840A1 (en) * 2020-12-16 2022-06-16 Stmicroelectronics Pte Ltd Passivation layer for an integrated circuit device that provides a moisture and proton barrier
CN117043964A (zh) * 2021-03-26 2023-11-10 罗姆股份有限公司 半导体装置
CN113921588A (zh) * 2021-09-01 2022-01-11 格力电器（合肥）有限公司 半导体器件及其制备方法
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US20150255362A1 (en) 2015-09-10
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