CN104900685B - 具有钝化层的半导体器件及用于制作其的方法 - Google Patents

具有钝化层的半导体器件及用于制作其的方法 Download PDF

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CN104900685B
CN104900685B CN201510099304.2A CN201510099304A CN104900685B CN 104900685 B CN104900685 B CN 104900685B CN 201510099304 A CN201510099304 A CN 201510099304A CN 104900685 B CN104900685 B CN 104900685B
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layer
region
semiconductor device
contact electrode
semiconductor
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CN104900685A (zh
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C.黑希特
A.卡巴科夫
J.P.康拉特
R.鲁普
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Infineon Technologies AG
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Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
CN201510099304.2A 2014-03-07 2015-03-06 具有钝化层的半导体器件及用于制作其的方法 Active CN104900685B (zh)

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US14/200732 2014-03-07
US14/200,732 US20150255362A1 (en) 2014-03-07 2014-03-07 Semiconductor Device with a Passivation Layer and Method for Producing Thereof

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JP6558385B2 (ja) * 2017-02-23 2019-08-14 トヨタ自動車株式会社 半導体装置の製造方法
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CN117043964A (zh) * 2021-03-26 2023-11-10 罗姆股份有限公司 半导体装置
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JPWO2023067925A1 (cg-RX-API-DMAC10.html) * 2021-10-21 2023-04-27
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