CN1961412A - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
- Publication number
- CN1961412A CN1961412A CN200580017592.7A CN200580017592A CN1961412A CN 1961412 A CN1961412 A CN 1961412A CN 200580017592 A CN200580017592 A CN 200580017592A CN 1961412 A CN1961412 A CN 1961412A
- Authority
- CN
- China
- Prior art keywords
- semiconductor device
- heat abstractor
- bipolar cell
- electrode
- collector layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 325
- 239000000758 substrate Substances 0.000 claims abstract description 103
- 239000002184 metal Substances 0.000 claims description 84
- 229910052751 metal Inorganic materials 0.000 claims description 84
- 238000009413 insulation Methods 0.000 claims description 27
- 230000002093 peripheral effect Effects 0.000 claims description 22
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 239000012528 membrane Substances 0.000 claims description 5
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 239000006185 dispersion Substances 0.000 description 11
- 238000005755 formation reaction Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 239000012535 impurity Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000001808 coupling effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- VIRZZYBEAHUHST-UHFFFAOYSA-N bicyclo[4.2.0]octa-1,3,5-triene Chemical compound C1CC=2C1=CC=CC2.C2CC=1C2=CC=CC1 VIRZZYBEAHUHST-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0664—Vertical bipolar transistor in combination with diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
- H01L29/66318—Heterojunction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (44)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP098911/2004 | 2004-03-30 | ||
JP2004098911 | 2004-03-30 | ||
PCT/JP2005/006165 WO2005096365A1 (ja) | 2004-03-30 | 2005-03-30 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1961412A true CN1961412A (zh) | 2007-05-09 |
CN1961412B CN1961412B (zh) | 2010-05-26 |
Family
ID=35064071
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200580017592.7A Expired - Fee Related CN1961412B (zh) | 2004-03-30 | 2005-03-30 | 半导体器件 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7741700B2 (zh) |
JP (1) | JP4955384B2 (zh) |
CN (1) | CN1961412B (zh) |
WO (1) | WO2005096365A1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102246283B (zh) * | 2008-10-21 | 2014-08-06 | 瑞萨电子株式会社 | 双极晶体管 |
CN103999224A (zh) * | 2011-11-16 | 2014-08-20 | 天工方案公司 | 与用于异质结双极晶体管工艺中金属化的阻挡层有关的装置和方法 |
CN105871328A (zh) * | 2016-06-03 | 2016-08-17 | 浙江人和光伏科技有限公司 | 一种太阳能电池用接线盒 |
CN109659286A (zh) * | 2017-10-11 | 2019-04-19 | 株式会社村田制作所 | 功率放大器模块 |
CN110197849A (zh) * | 2018-02-27 | 2019-09-03 | 株式会社村田制作所 | 半导体装置 |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007533133A (ja) | 2004-04-07 | 2007-11-15 | ティンギ テクノロジーズ プライベート リミテッド | 半導体発光ダイオード上での反射層の作製 |
SG131803A1 (en) * | 2005-10-19 | 2007-05-28 | Tinggi Tech Private Ltd | Fabrication of transistors |
SG133432A1 (en) | 2005-12-20 | 2007-07-30 | Tinggi Tech Private Ltd | Localized annealing during semiconductor device fabrication |
SG140473A1 (en) | 2006-08-16 | 2008-03-28 | Tinggi Tech Private Ltd | Improvements in external light efficiency of light emitting diodes |
SG140512A1 (en) | 2006-09-04 | 2008-03-28 | Tinggi Tech Private Ltd | Electrical current distribution in light emitting devices |
FR2924271B1 (fr) * | 2007-11-27 | 2010-09-03 | Picogiga Internat | Dispositif electronique a champ electrique controle |
US20100181847A1 (en) * | 2009-01-22 | 2010-07-22 | Shen-Yu Huang | Method for reducing supply voltage drop in digital circuit block and related layout architecture |
KR101020993B1 (ko) * | 2009-03-10 | 2011-03-09 | 엘지이노텍 주식회사 | 발광소자 패키지 및 그 제조방법 |
JP5017303B2 (ja) * | 2009-03-25 | 2012-09-05 | 株式会社東芝 | 半導体装置 |
US8969973B2 (en) * | 2010-07-02 | 2015-03-03 | Win Semiconductors Corp. | Multi-gate semiconductor devices |
US9847407B2 (en) | 2011-11-16 | 2017-12-19 | Skyworks Solutions, Inc. | Devices and methods related to a gallium arsenide Schottky diode having low turn-on voltage |
US8912577B2 (en) * | 2012-09-19 | 2014-12-16 | The United States Of America As Represented By The Secretary Of The Army | Distributed heating transistor devices providing reduced self-heating |
JP6134119B2 (ja) * | 2012-10-05 | 2017-05-24 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9214423B2 (en) * | 2013-03-15 | 2015-12-15 | Semiconductor Components Industries, Llc | Method of forming a HEMT semiconductor device and structure therefor |
US20220013415A1 (en) * | 2013-11-12 | 2022-01-13 | Skyworks Solutions, Inc. | Radio-frequency switching devices having improved voltage handling capability |
US9620424B2 (en) * | 2013-11-12 | 2017-04-11 | Skyworks Solutions, Inc. | Linearity performance for radio-frequency switches |
JP6260307B2 (ja) * | 2014-01-30 | 2018-01-17 | 住友電気工業株式会社 | 半導体装置 |
JP2015233089A (ja) * | 2014-06-10 | 2015-12-24 | 株式会社サイオクス | 化合物半導体素子用エピタキシャルウェハ及び化合物半導体素子 |
US11508834B2 (en) * | 2014-11-27 | 2022-11-22 | Murata Manufacturing Co., Ltd. | Compound semiconductor device |
US20160169833A1 (en) * | 2014-12-11 | 2016-06-16 | International Business Machines Corporation | Biosensor based on heterojunction bipolar transistor |
US20160372396A1 (en) * | 2015-06-22 | 2016-12-22 | Globalfoundries Inc. | Chip packages with reduced temperature variation |
US9905678B2 (en) | 2016-02-17 | 2018-02-27 | Qorvo Us, Inc. | Semiconductor device with multiple HBTs having different emitter ballast resistances |
CN107092117B (zh) * | 2017-06-29 | 2019-11-12 | 京东方科技集团股份有限公司 | 显示面板及提高显示面板显示质量的方法 |
JP2019054120A (ja) * | 2017-09-15 | 2019-04-04 | 株式会社村田製作所 | バイポーラトランジスタ及び高周波パワーアンプモジュール |
TWI747145B (zh) * | 2019-03-19 | 2021-11-21 | 日商村田製作所股份有限公司 | 半導體裝置及放大器模組 |
JP2022080639A (ja) * | 2020-11-18 | 2022-05-30 | 株式会社村田製作所 | 半導体装置 |
CN114497234B (zh) * | 2022-01-25 | 2022-12-06 | 先之科半导体科技(东莞)有限公司 | 一种低损耗小体积的肖特基二极管 |
Family Cites Families (19)
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JPS5556670A (en) * | 1978-10-23 | 1980-04-25 | Sharp Corp | Solar cell |
JPH02292853A (ja) * | 1989-05-02 | 1990-12-04 | Toshiba Corp | 化合物半導体集積回路およびその製造方法 |
JP2590718B2 (ja) * | 1993-12-21 | 1997-03-12 | 日本電気株式会社 | バイポーラトランジスタ |
JPH08279562A (ja) | 1994-07-20 | 1996-10-22 | Mitsubishi Electric Corp | 半導体装置、及びその製造方法 |
JPH08227896A (ja) * | 1995-02-20 | 1996-09-03 | Fujitsu Ltd | ヘテロ接合バイポーラトランジスタ |
JP3595080B2 (ja) | 1995-11-27 | 2004-12-02 | 三菱電機株式会社 | バイポーラトランジスタ |
JPH10125616A (ja) | 1996-10-22 | 1998-05-15 | Meidensha Corp | パワートランジスタ |
JPH10144801A (ja) * | 1996-11-14 | 1998-05-29 | Toshiba Corp | 半導体装置 |
JP3147048B2 (ja) * | 1997-09-12 | 2001-03-19 | 日本電気株式会社 | 半導体装置 |
JPH11274381A (ja) * | 1998-03-26 | 1999-10-08 | Mitsubishi Electric Corp | バイポーラトランジスタ装置の放熱構造 |
JP2000277530A (ja) | 1999-03-25 | 2000-10-06 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP2000307000A (ja) * | 1999-04-22 | 2000-11-02 | Toshiba Corp | 半導体装置 |
JP4438133B2 (ja) | 1999-08-19 | 2010-03-24 | シャープ株式会社 | ヘテロ接合型バイポーラトランジスタおよびその製造方法 |
JP3450242B2 (ja) * | 1999-11-26 | 2003-09-22 | Necエレクトロニクス株式会社 | 化合物半導体集積回路の製造方法 |
JP2001168094A (ja) | 1999-12-06 | 2001-06-22 | Murata Mfg Co Ltd | 配線構造、配線形成方法及び半導体装置 |
JP4468609B2 (ja) | 2001-05-21 | 2010-05-26 | 株式会社ルネサステクノロジ | 半導体装置 |
JP2003007840A (ja) * | 2001-06-25 | 2003-01-10 | Nec Corp | 半導体装置及び半導体装置製造方法 |
US6712258B2 (en) * | 2001-12-13 | 2004-03-30 | International Business Machines Corporation | Integrated quantum cold point coolers |
JP4162439B2 (ja) * | 2002-07-19 | 2008-10-08 | アンリツ株式会社 | 半導体集積回路 |
-
2005
- 2005-03-30 WO PCT/JP2005/006165 patent/WO2005096365A1/ja active Application Filing
- 2005-03-30 JP JP2006511767A patent/JP4955384B2/ja not_active Expired - Fee Related
- 2005-03-30 US US11/547,402 patent/US7741700B2/en active Active
- 2005-03-30 CN CN200580017592.7A patent/CN1961412B/zh not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102246283B (zh) * | 2008-10-21 | 2014-08-06 | 瑞萨电子株式会社 | 双极晶体管 |
CN103999224A (zh) * | 2011-11-16 | 2014-08-20 | 天工方案公司 | 与用于异质结双极晶体管工艺中金属化的阻挡层有关的装置和方法 |
CN105871328A (zh) * | 2016-06-03 | 2016-08-17 | 浙江人和光伏科技有限公司 | 一种太阳能电池用接线盒 |
CN109659286A (zh) * | 2017-10-11 | 2019-04-19 | 株式会社村田制作所 | 功率放大器模块 |
CN109659286B (zh) * | 2017-10-11 | 2023-09-01 | 株式会社村田制作所 | 功率放大器模块 |
CN110197849A (zh) * | 2018-02-27 | 2019-09-03 | 株式会社村田制作所 | 半导体装置 |
Also Published As
Publication number | Publication date |
---|---|
US20080230807A1 (en) | 2008-09-25 |
JP4955384B2 (ja) | 2012-06-20 |
WO2005096365A1 (ja) | 2005-10-13 |
CN1961412B (zh) | 2010-05-26 |
US7741700B2 (en) | 2010-06-22 |
JPWO2005096365A1 (ja) | 2008-02-21 |
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