CN1914715A - 用于各种刻蚀和光刻集成方案的无定型碳的使用技术 - Google Patents

用于各种刻蚀和光刻集成方案的无定型碳的使用技术 Download PDF

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CN1914715A
CN1914715A CNA2005800032995A CN200580003299A CN1914715A CN 1914715 A CN1914715 A CN 1914715A CN A2005800032995 A CNA2005800032995 A CN A2005800032995A CN 200580003299 A CN200580003299 A CN 200580003299A CN 1914715 A CN1914715 A CN 1914715A
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amorphous carbon
carbon layer
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silicon
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CN100524640C (zh
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伟·刘
吉姆·中义·何
桑-H·安
梅华·沈
海澈姆·穆萨德
温迪·H·叶
克里斯多佛·D·本彻尔
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Applied Materials Inc
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Abstract

本发明提供一种刻蚀衬底的方法。该刻蚀衬底的方法包括使用衬底上的经两次图案化的无定型碳层作为硬掩模将图案转移到衬底中。可选地，在图案被转移到衬底中之前，非碳基层被沉积无定型碳层上作为覆盖层。

Description

用于各种刻蚀和光刻集成方案的无定型碳的使用技术
技术领域
本发明的实施例涉及集成电路的制造。更具体而言，本发明的实施例涉及图案化和刻蚀半导体衬底中的特征的方法。
背景技术
自从在几十年前第一次引入集成电路以来，这样的集成电路几何的尺寸已经极大地减小了。从那以后，集成电路一般遵循两年/尺寸减半规则(通常称为摩尔定律)，这意味着芯片上的器件的数量每两年翻一番。现在的制造设备常规上制造具有0.13μm甚至0.1μm特征尺寸的器件，并且下一代的设备将制造具有甚至更小特征尺寸的器件。
器件几何的持续减小已经产生了对于形成在半导体衬底上以纳米尺度距离间隔开的纳米尺度特征的方法的需要。因为当前的光刻工艺即将达到光学分辨率的极限，一种已经开发来减小衬底上的特征或器件之间的距离的方法包括用于将图案转移到衬底中的硬掩模层的两次图案化。在两次图案化方法中，硬掩模层被沉积在将被刻蚀的衬底层上。硬掩模层通过沉积在硬掩模层上的光刻胶被图案化。然后去除光刻胶，利用沉积在硬掩模层上的第二光刻胶将第二图案引入到硬掩模层中。
虽然目前的两次图案化方法可以用来减小衬底上的特征之间的距离，但是仍然存在对于可以用作用于两次图案化方法的硬掩模的材料的需要。具体来说，存在对于充当抗反射涂层的两次图案化硬掩模层的需要，其中所述抗反射涂层使可能在光刻过程中损害分辨率的反射最小化。图1(现有技术)示出了具有以低分辨率图案化的特征12、14的衬底10的示例。还存在对于如下两次图案化硬掩模层的需要，该两次图案化硬掩模层具有对于将被刻蚀的下方衬底的良好刻蚀选择性，并且在衬底被刻蚀之后可容易去除。
发明内容
本发明的实施例提供一种刻蚀衬底的方法，包括：在所述衬底上沉积无定型碳层；在所述无定型碳层中定义第一图案；在所述无定型碳层上沉积一层光刻胶；图案化所述光刻胶；将所述光刻胶中的所述图案转移穿过所述无定型碳层，以在所述无定型碳层中形成第二图案；以及将所述无定型碳层中的所述第一和第二图案转移穿过所述衬底。
在一个方面中，一种刻蚀衬底的方法包括：在所述衬底上沉积无定型碳层；在所述无定型碳层上沉积非碳基层；在所述无定型碳层上沉积一层光刻胶；图案化所述光刻胶；将所述光刻胶中的所述图案转移穿过所述非碳基层和所述无定型碳层，以在所述无定型碳层中形成第二图案；以及将所述无定型碳层中的所述第一和第二图案转移穿过所述衬底。
在另一个方面中，一种刻蚀衬底的方法包括：在所述衬底上沉积无定型碳层；在所述无定型碳层上沉积第一非碳基层；在所述非碳基层和所述无定型碳层中定义第一图案；在所述无定型碳层上沉积第二非碳基层；在所述第二非碳基层上沉积一层光刻胶；图案化所述光刻胶；将所述光刻胶中的所述图案转移穿过所述第二非碳基层和所述无定型碳层，以在所述无定型碳层中形成第二图案；以及将所述无定型碳层中的所述第一和第二图案转移穿过所述衬底。
附图说明
作为可以详细理解本发明的上述特征的方式，可以参考实施例对在上面简要说明的本发明进行更具体描述，其中的一些实施例图示于附图中。但是，应该注意，附图仅仅图示了本发明的典型实施例，因此不应认为是限制其范围，因为本发明可以允许其他等效实施例。
图1是根据现有技术处理的结构的剖视图。
图2A-2F是根据本发明的实施例处理的结构的剖视图。
图3A-3F是根据本发明的实施例处理的结构的剖视图。
图4A-4D是根据本发明的实施例处理的结构的剖视图。
具体实施方式
本发明的实施例提供一种刻蚀衬底以形成非常小的诸如线或互连孔之类的特征(例如，多条非常紧密间隔(例如相隔70-75nm)的70-75nm线)的方法。无定型碳层被用作用于刻蚀衬底以形成非常小且紧密间隔的特征的硬掩模层。在深紫外(DUV)波长(例如小于约250nm)下无定型碳层是抗反射涂层。无定型碳层具有对于氧化物约10∶1和对于多晶硅的约6∶1的刻蚀选择性。在无定型碳层被作为硬掩模使用之后，可以使用等离子体灰化容易地去除该无定型碳层。
现在将参照图2A-2F描述本发明的一个实施例。无定型碳层104被沉积在衬底102上，如图2A所示。衬底102可以是或可以包括选自由硅、多晶硅、氧化物、氮化物、钨、硅化钨、铝、氧碳化硅及其组合组成的组的材料。衬底102可以上覆于底层100。底层100可以是在衬底102的刻蚀过程中的用于衬底102的刻蚀停止层。可选地，在无定型碳层104沉积在衬底上之前，可以在衬底102上沉积抗反射涂层层，该抗反射涂层层选自由无定型硅、氮化硅、氧氮化硅、氧化硅、掺杂氧化硅、氧碳化硅、碳化物、碳化硅、钛和氮化钛组成的组。选择抗反射涂层层材料，使得抗反射涂层层和衬底之间具有良好的刻蚀选择性。
无定型碳层104可以通过各种方法来沉积，诸如化学气相沉积、等离子体增强化学气相沉积、高密度等离子体化学气相沉积、或其组合。无定型碳层可以包括碳和氢，或者碳、氢和掺杂剂，掺杂剂包括诸如氮、硼、氟、磷或者它们的混合、以及其它。
在一个实施例中，无定型碳层由烃化合物和诸如氩、氦、氙、氪、氖或其组合的惰性气体的气体混合物形成。优选地，碳源是气态烃，诸如线性烃。在一个实施例中，烃化合物具有通式CxHy，其中，x的范围为2～4，y的范围为2～10。例如，丙烯(C3H6)、丙炔(C3H4)、丙烷(C3H8)、丁烷(C4H10)、丁烯(C4H8)、丁二烯(C4H6)或者乙炔以及它们的组合可以被用作烃化合物。类似地，诸如氢气(H2)、氮气(N2)、氨气(NH3)或其组合等的各种气体可以被添加到气体混合物，如果需要的话，Ar、He和N2可以被用于控制无定型碳层的密度和沉积速率。如下所讨论的，H2和/或NH3的添加可以被用于控制无定型碳层的氢比率。
一般来说，下面的沉积工艺参数可以被用于形成无定型碳层。工艺参数范围为：约100℃～约700℃的晶片温度，约1托(Torr)～约20托的室压强、约50sccm～约500sccm(每8英寸晶片)的烃气体流率、约1W/in2～约100W/in2(诸如约3W/in2～约20W/in2)的RF功率、以及约300密耳～约600密耳的板间距。优选地，无定型碳层被沉积到约400埃～约10000埃(诸如约500埃)的厚度。上述的工艺参数提供了范围约100埃/分～约5000埃/分的典型无定型碳层沉积速率，并且可以在可从加利福尼亚Santa Clara的应用材料公司得到的沉积室中在200mm的衬底上实现。可使用的沉积室的实例是可从应用材料公司得到的Producer系统中的APFTM室。
其它的沉积室也落入了本发明的范围，并且上面列出的参数可以根据用于形成无定型碳层的特定沉积室变化。例如，其它的沉积室可以具有更大或更小的体积，需要比针对可从应用材料公司得到的沉积室所述的更大或更小的气体流率。
所沉积的无定型碳层具有可调节的碳∶氢比率，该碳∶氢比率的范围为从约10％的氢到约60％的氢。控制无定型碳层的氢比率对于调节其光学性能以及其刻蚀选择性是理想的。具体地，随着氢比率减小，所沉积的层的光学性能，诸如吸收系数(k)增大。类似地，随着氢比率减小，取决于所使用的刻蚀化学剂，无定型碳层的耐刻蚀性可能增加。
无定型碳层的光吸收系数(k)可以在低于约250nm的波长下在约0.1到约1.0之间变化，使其适于用作DUV波长下的抗反射涂层(ARC)。无定型碳层的吸收系数可以作为沉积温度的函数而变化。具体来说，随着温度增高，所沉积的层的吸收系数同样也增大。例如，当丙烯作为用于沉积无定型碳层的烃化合物时，通过将沉积温度从约150℃增高到约480℃，所沉积的无定型碳层的k值可以从约0.2增大到约0.7。优选地，无定型碳层吸收少于约50％的波长约450nm到约700nm的光，因为半导体衬底一般利用对齐标志对齐并且使用约450nm和约700nm之间的波长检验。
无定型碳层的吸收系数还可以作为在气体混合物中所使用的添加剂的函数变化。具体来说，在气体混合物中H2、NH3、N2或其组合物的存在下可以将k值增大约10％到约100％。
在另一个实施例中，无定型碳层通过高密度等离子体化学气相沉积方法(HDP-CVD)由包含烃化合物的气体混合物来沉积。优选的烃气体是甲烷(CH4)。但是，可以使用其它的烃气体(诸如C2H6和C2H2)，以及多种烃气体的混合物(例如乙炔和甲烷的混合物)。可以使用选自烯烃族、烷烃族和炔烃族的气态烃和液态烃。这些烃的实例包括CH4、C2H2、C2H4、C2H6和C2H8。
烃气体连同诸如氩的载气被引入到HDP-CVD室中。可以使用的HDP-CVD室的示例是可从应用材料公司得到的Centura系统上的UltimaHDP-CVD室。HDP-CVD室的示例在美国专利No.6,423,384中有进一步描述，该美国专利通过引用被包含在本文中。优选地，烃气体通过第一组气体喷嘴以约10sccm到约500sccm的流率引入到室中，载气通过第二组气体喷嘴以约5sccm到约300sccm的流率引入到室中。在一个优选实施例中，烃气体以约125sccm的流率引入到室中，氩气以约27sccm的流率引入到室中。烃气体的流率与载气的流率的优选比值为约2∶1到约5∶1之间。虽然烃气体和载气优选通过独立的气体喷嘴引入室中，但是烃气体和载气可以在它们被引入室中之前被预混合。
优选地，在处理期间的室压强被保持在约10mTorr到100mTorr之间，诸如保持在约20mTorr。施加到室以产生和维持处理气体(包括烃气体和载气两者)的等离子体的源等离子体功率优选为：对于200mm衬底，约2MHz下以及小于2000W(诸如约1000W)的RF功率。所施加的功率根据被处理的衬底的尺寸而被调节。优选地，衬底在沉积工艺期间被维持在约300℃到约430℃之间，并且衬底的背面通过静电卡盘中的通道中氦气冷却。优选地，在沉积工艺期间，不激活衬底偏压功率。在沉积工艺之后，衬底可以在不破坏真空的情况下被转移到退火室，可以在退火室中在真空或者在惰性气氛中、在约300℃到约430℃之间的温度下、持续约30分钟到约90分钟，来进行可选退火步骤。在一个实施例中，经沉积的衬底在氮气氛中退火约30分钟。
在衬底102上沉积无定型碳层104之后，无定型碳层104被图案化，以在其中包含特征108，如图2C所示。无定型碳层104可以通过在无定型碳层104上沉积和图案化光刻胶106来图案化，如图2B所示。在光刻胶106中图案化的特征107被转移到无定型碳层104中，以在无定型碳层104中创建特征108，并且光刻胶106被去除，如图2C所示。然后将光刻胶110沉积在无定型碳层上，并且将光刻胶110图案化以包括特征112，如图2D所示。在光刻胶110中图案化的特征112被转移到无定型碳层104，以在无定型碳层104中创建特征114，并且光刻胶110被去除，如图2E所示。无定型碳层104可以通过使用氧、氢和诸如NF3、SF6、CF4的含氟气体或其混合物的等离子体来刻蚀该层而被刻蚀。可选地，等离子体还可以包括HBr、N2、He、Ar或者其组合。然后使用无定型碳层作为掩模，将在无定型碳层中所图案化的特征108和114转移穿过衬底，以在衬底中形成特征116，如图2F所示。衬底可以通过将衬底暴露于适于衬底的组成的刻蚀剂来被图案化。在衬底被刻蚀之后，无定型碳层可以利用包含臭氧、氧、氨、氢或其组合的等离子体从衬底去除。
在本文所描述的实施例中任何一个中，光刻胶可以使用常规技术来沉积、图案化和去除。例如，具有约2000埃到约6000埃之间的厚度的光刻胶层可以被沉积在衬底上。可以使用对于波长小于约450nm的UV辐射敏感的光刻胶或者对于波长为诸如248nm或193nm的辐射敏感的深紫外辐射抗蚀剂。光刻胶可以通过将光刻胶经过图案化的掩模暴露于适当波长的辐射来图案化。光刻胶可以通过等离子体灰化工艺去除。
在另一个实施例中，诸如非碳基电介质层的非碳基层被沉积在上述的无定型碳层上，作为覆盖层。如在此所定义的，非碳基层包括小于约50at％的碳。可以使用的非碳基材料的示例包括无定型硅、氮化硅、氧氮化硅、氧化硅、掺杂氧化硅、氧碳化硅、碳化物、碳化硅、钛和氮化钛。非碳基层可以在诸如去除光刻胶的处理步骤中保护无定型碳层。非碳基层也可以充当抗反射涂层。选择非碳基层，使得在非碳基层和无定型碳层下方的衬底之间存在良好的刻蚀选择性。优选地，非碳基层具有约50埃到约500埃之间的厚度。优选地，非碳基层具有至少约200埃的厚度。
在无定型碳层上包括非碳基层作为覆盖层的实施例将参考图3A-3F来描述。上面参考图2A-2F所描述的方法可以被用于执行参考图3A-3F和图4A-4D所描述的实施例中的相应步骤。
无定型碳层204被沉积在衬底202上，如图3A所示。衬底202可以上覆于底层200。底层200可以是在衬底202的刻蚀过程中的用于衬底202的刻蚀停止层。非碳基层205沉积在无定型碳层204上。非碳基层205可以通过常规的方法来沉积，诸如化学气相沉积、物理气相沉积或者旋涂工艺。无定型碳层204和非碳基层205可以通过在非碳基层205上沉积和图案化光刻胶206来图案化，如图3B所示。在光刻胶206中图案化的特征207被转移到无定型碳层204和非碳基层205中，以在无定型碳层204和非碳基层205中创建特征208，并且光刻胶206被去除，如图3C所示。然后将光刻胶210沉积在无定型碳层上，并且将光刻胶210图案化以包括特征212，如图3D所示。在光刻胶210中图案化的特征212被转移到无定型碳层204和非碳基层205，以在无定型碳层204和非碳基层205中创建特征214，并且光刻胶210被去除，如图3E所示。然后使用无定型碳层作为掩模，将在无定型碳层中所图案化的特征208和214转移穿过衬底，以在衬底中形成特征216，如图3F所示。在特征被转移穿过衬底的同时或者在去除无定型碳层过程中，可以去除非碳基层。无定型碳层可以利用包含臭氧、氧、氨、氢或其组合的等离子体从衬底去除。
虽然在图3A-3F的实施例中的非碳基层205被图示和描述为在特征208形成在无定型碳层204中之后保留在衬底上，但是在其它实施例中，在特征208被形成在无定型碳层中之后(诸如在去除光刻胶206的过程中)，可以去除非碳基层205的一部分或者全部。在一个实施例中，第二非碳基层被沉积在衬底上。第二非碳基层可以直接沉积在衬底上、沉积在第一非碳基层上、或者沉积在第一非碳基层的保留部分上。第二非碳基层可以包括无定型硅、氮化硅、氧化硅、掺杂氧化硅、氧碳化硅、碳化物、碳化硅、钛和氮化钛。第二非碳基层可以具有与第一非碳基层相同或者不同的组成。
图4A-4D示出了其中在处理过程中第一非碳基层205的全部被去除的实施例。图4A对应于图3C，不同之处为第一非碳基层205已经被去除。然后，第二非碳基层220被沉积在无定型碳层204和暴露的衬底202上，并且光刻胶222被沉积在第二非碳基层220上，如图4B所示。光刻胶222被图案化以包括特征224，如图4C所示。在光刻胶206中图案化的特征224被转移到无定型碳层204和非碳基层220，以在无定型碳层204和非碳基层220中创建特征208，并且光刻胶222被去除，如图4所示。图4D基本上对应于图3E。然后刻蚀衬底202，如图3F所示。
在图2A-2F和3A-3F所示的实施例中，相同或基本相同的特征被形成在被图案化两次并且用作图案化衬底的硬掩模的无定型碳层中。优选地，第一掩模被用于在无定型碳层中形成第一图案，第二掩模被用于在无定型碳层中形成第二图案。
示例
在Producer系统中将550埃的无定型碳APFTM层沉积在硅衬底上。在Producer系统中将250埃的非碳基层、氧氮化硅电介质抗反射涂层(DARC)沉积在无定型碳APFTM层上。无定型碳APFTM层和DARC层具有对于248nm电磁辐射小于0.5％的反射率。DARC被涂覆以2000埃的TOK N850负型光刻胶。光刻胶在90℃下预烘60秒。光刻胶用CanonFPA-5000ES2曝光工具在0.68的NA和0.3的σ下曝光。将光刻胶在110℃下曝光后烘90秒，然后用0.26N的氢氧化四甲基铵(TMAH)在23℃下显影60秒。侧壁铬交替孔隙掩模被用于该曝光。在可从应用材料公司得到的DPS II室中将在光刻胶中定义的图案转移穿过无定型碳层。另一层光刻胶被沉积在衬底上，并且如上所述进行图案化。在DPS II室中将在光刻胶中的图案转移穿过无定型碳层。然后，在DPS II室中将无定型碳层中的图案转移穿过衬底。图案化的衬底具有间隔75nm距离的75nm的互连。
虽然上面所述的涉及本发明的实施例，但是可以设计本发明的其它和更多的实施例，而不偏离本发明的基本范围，本发明的基本范围有所附权利要求确定。
权利要求书
(按照条约第19条的修改)
1.一种刻蚀衬底的方法，包括：
在所述衬底上沉积无定型碳层；
在所述无定型碳层中定义第一图案；
在所述无定型碳层上沉积一层光刻胶；
图案化所述光刻胶；
将所述光刻胶中的所述图案转移穿过所述无定型碳层，以在所述无定型碳层中形成第二图案；然后
将所述无定型碳层中的所述第一和第二图案转移穿过所述衬底。
2.如权利要求1所述的方法，其中，所述无定型碳层通过由包含一种或多种具有通式CxHy的烃的气体混合物气相沉积来沉积，其中x的范围为2到4，y的范围为2到10。
3.如权利要求1所述的方法，其中，所述衬底包括选自由硅、多晶硅、氧化物、氮化物、钨、硅化钨、铝、氧碳化硅及其组合组成的组的材料。
4.如权利要求1所述的方法，还包括在沉积所述无定型碳层之前，在所述衬底上沉积抗反射涂层层，所述抗反射涂层层选自由无定型硅、氮化硅、氧氮化硅、氧化硅、掺杂氧化硅、氧碳化硅、碳化物、碳化硅、钛和氮化钛组成的组。
5.如权利要求1所述的方法，其中，所述无定型碳层在约1W/in2到约100W/in2之间的功率下沉积。
6.如权利要求1所述的方法，还包括在所述无定型碳层中的所述第一和第二图案被转移穿过所述衬底之后，从所述衬底去除所述无定型碳层。
7.一种刻蚀衬底的方法，包括：
在所述衬底上沉积无定型碳层；
在所述无定型碳层上沉积非碳基层；
在所述非碳基层和所述无定型碳层中定义第一图案；
在所述无定型碳层上沉积一层光刻胶；
图案化所述光刻胶；
将所述光刻胶中的所述图案转移穿过所述非碳基层和所述无定型碳层，以在所述无定型碳层中形成第二图案；以及
将所述无定型碳层中的所述第一和第二图案转移穿过所述衬底。
8.如权利要求7所述的方法，其中，所述无定型碳层通过由包含一种或多种具有通式CxHy的烃的气体混合物气相沉积来沉积，其中x的范围为2到4，y的范围为2到10。
9.如权利要求7所述的方法，其中，所述衬底包括选自由硅、多晶硅、氧化物、氮化物、钨、硅化钨、铝、氧碳化硅及其组合组成的组的材料。
10.如权利要求7所述的方法，还包括在沉积所述无定型碳层之前，在所述衬底上沉积抗反射涂层层，所述抗反射涂层层选自由无定型硅、氮化硅、氧氮化硅、氧化硅、掺杂氧化硅、氧碳化硅、碳化物、碳化硅、钛和氮化钛组成的组。
11.如权利要求7所述的方法，其中，所述无定型碳层在约1W/in2到约100W/in2之间的功率下沉积。
12.如权利要求7所述的方法，其中，所述非碳基层选自由无定型硅、氮化硅、氧氮化硅、氧化硅、掺杂氧化硅、氧碳化硅、碳化物、碳化硅、钛和氮化钛组成的组。
13.如权利要求12所述的方法，其中，所述非碳基层具有约50埃到约500埃之间的厚度。
14.如权利要求7所述的方法，还包括在所述无定型碳层中的所述第一和第二图案被转移穿过所述衬底之后，从所述衬底去除所述无定型碳层和所述非碳基层。
15.一种刻蚀衬底的方法，包括：
在所述衬底上沉积无定型碳层；
在所述无定型碳层上沉积第一非碳基层；
在所述第一非碳基层和所述无定型碳层中定义第一图案；
在所述无定型碳层上沉积第二非碳基层；
在所述第二非碳基层上沉积一层光刻胶；
图案化所述光刻胶；
将所述光刻胶中的所述图案转移穿过所述第二非碳基层和所述无定型碳层，以在所述无定型碳层中形成第二图案；以及
将所述无定型碳层中的所述第一和第二图案转移穿过所述衬底。
16.如权利要求15所述的方法，其中，所述第一非碳基层选自由无定型硅、氮化硅、氧氮化硅、氧化硅、掺杂氧化硅、氧碳化硅、碳化物、碳化硅、钛和氮化钛组成的组。
17.如权利要求16所述的方法，其中，所述第一非碳基层具有约50埃到约500埃之间的厚度。
18.如权利要求15所述的方法，其中，所述第二非碳基层选自由无定型硅、氮化硅、氧氮化硅、氧化硅、掺杂氧化硅、氧碳化硅、碳化物、碳化硅、钛和氮化钛组成的组。
19.如权利要求15所述的方法，其中，所述无定型碳层通过由包含一种或多种具有通式CxHy的烃的气体混合物气相沉积来沉积，其中x的范围为2到4，y的范围为2到10。
20.如权利要求15所述的方法，其中，所述衬底包括选自由硅、多晶硅、氧化物、氮化物、钨、硅化钨、铝、氧碳化硅及其组合组成的组的材料。
21.如权利要求15所述的方法，还包括在沉积所述无定型碳层之前，在所述衬底上沉积抗反射涂层层，所述抗反射涂层层选自由无定型硅、氮化硅、氧氮化硅、氧化硅、掺杂氧化硅、氧碳化硅、碳化物、碳化硅、钛和氮化钛组成的组。
22.如权利要求15所述的方法，其中，所述无定型碳层在约1W/in2到约100W/in2之间的功率下沉积。
23.如权利要求15所述的方法，还包括在所述无定型碳层中的所述第一和第二图案被转移穿过所述衬底之后，从所述衬底去除所述无定型碳层和所述第二非碳基层。

Claims (23)

1.一种刻蚀衬底的方法，包括：
在所述衬底上沉积无定型碳层；
在所述无定型碳层中定义第一图案；
在所述无定型碳层上沉积一层光刻胶；
图案化所述光刻胶；
将所述光刻胶中的所述图案转移穿过所述无定型碳层，以在所述无定型碳层中形成第二图案；以及
将所述无定型碳层中的所述第一和第二图案转移穿过所述衬底。
2.如权利要求1所述的方法，其中，所述无定型碳层通过由包含一种或多种具有通式CxHy的烃的气体混合物气相沉积来沉积，其中x的范围为2到4，y的范围为2到10。
3.如权利要求1所述的方法，其中，所述衬底包括选自由硅、多晶硅、氧化物、氮化物、钨、硅化钨、铝、氧碳化硅及其组合组成的组的材料。
4.如权利要求1所述的方法，还包括在沉积所述无定型碳层之前，在所述衬底上沉积抗反射涂层层，所述抗反射涂层层选自由无定型硅、氮化硅、氧氮化硅、氧化硅、掺杂氧化硅、氧碳化硅、碳化物、碳化硅、钛和氮化钛组成的组。
5.如权利要求1所述的方法，其中，所述无定型碳层在约1W/in2到约100W/in2之间的功率下沉积。
6.如权利要求1所述的方法，还包括在所述无定型碳层中的所述第一和第二图案被转移穿过所述衬底之后，从所述衬底去除所述无定型碳层。
7.一种刻蚀衬底的方法，包括：
在所述衬底上沉积无定型碳层；
在所述无定型碳层上沉积非碳基层；
在所述非碳基层和所述无定型碳层中定义第一图案；
在所述无定型碳层上沉积一层光刻胶；
图案化所述光刻胶；
将所述光刻胶中的所述图案转移穿过所述非碳基层和所述无定型碳层，以在所述无定型碳层中形成第二图案；以及
将所述无定型碳层中的所述第一和第二图案转移穿过所述衬底。
8.如权利要求7所述的方法，其中，所述无定型碳层通过由包含一种或多种具有通式CxHy的烃的气体混合物气相沉积来沉积，其中x的范围为2到4，y的范围为2到10。
9.如权利要求7所述的方法，其中，所述衬底包括选自由硅、多晶硅、氧化物、氮化物、钨、硅化钨、铝、氧碳化硅及其组合组成的组的材料。
10.如权利要求7所述的方法，还包括在沉积所述无定型碳层之前，在所述衬底上沉积抗反射涂层层，所述抗反射涂层层选自由无定型硅、氮化硅、氧氮化硅、氧化硅、掺杂氧化硅、氧碳化硅、碳化物、碳化硅、钛和氮化钛组成的组。
11.如权利要求7所述的方法，其中，所述无定型碳层在约1W/in2到约100W/in2之间的功率下沉积。
12.如权利要求7所述的方法，其中，所述非碳基层选自由无定型硅、氮化硅、氧氮化硅、氧化硅、掺杂氧化硅、氧碳化硅、碳化物、碳化硅、钛和氮化钛组成的组。
13.如权利要求12所述的方法，其中，所述非碳基层具有约50埃到约500埃之间的厚度。
14.如权利要求7所述的方法，还包括在所述无定型碳层中的所述第一和第二图案被转移穿过所述衬底之后，从所述衬底去除所述无定型碳层和所述非碳基层。
15.一种刻蚀衬底的方法，包括：
在所述衬底上沉积无定型碳层；
在所述无定型碳层上沉积第一非碳基层；
在所述第一非碳基层和所述无定型碳层中定义第一图案；
在所述无定型碳层上沉积第二非碳基层；
在所述第二非碳基层上沉积一层光刻胶；
图案化所述光刻胶；
将所述光刻胶中的所述图案转移穿过所述第二非碳基层和所述无定型碳层，以在所述无定型碳层中形成第二图案；以及
将所述无定型碳层中的所述第一和第二图案转移穿过所述衬底。
16.如权利要求15所述的方法，其中，所述第一非碳基层选自由无定型硅、氮化硅、氧氮化硅、氧化硅、掺杂氧化硅、氧碳化硅、碳化物、碳化硅、钛和氮化钛组成的组。
17.如权利要求16所述的方法，其中，所述第一非碳基层具有约50埃到约500埃之间的厚度。
18.如权利要求15所述的方法，其中，所述第二非碳基层选自由无定型硅、氮化硅、氧氮化硅、氧化硅、掺杂氧化硅、氧碳化硅、碳化物、碳化硅、钛和氮化钛组成的组。
19.如权利要求15所述的方法，其中，所述无定型碳层通过由包含一种或多种具有通式CxHy的烃的气体混合物气相沉积来沉积，其中x的范围为2到4，y的范围为2到10。
20.如权利要求15所述的方法，其中，所述衬底包括选自由硅、多晶硅、氧化物、氮化物、钨、硅化钨、铝、氧碳化硅及其组合组成的组的材料。
21.如权利要求15所述的方法，还包括在沉积所述无定型碳层之前，在所述衬底上沉积抗反射涂层层，所述抗反射涂层层选自由无定型硅、氮化硅、氧氮化硅、氧化硅、掺杂氧化硅、氧碳化硅、碳化物、碳化硅、钛和氮化钛组成的组。
22.如权利要求15所述的方法，其中，所述无定型碳层在约1W/in2到约100W/in2之间的功率下沉积。
23.如权利要求15所述的方法，还包括在所述无定型碳层中的所述第一和第二图案被转移穿过所述衬底之后，从所述衬底去除所述无定型碳层和所述第二非碳基层。
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US7064078B2 (en) 2006-06-20
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US7718081B2 (en) 2010-05-18
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