CN1858911B - Tft阵列面板、包含它的液晶显示器及tft阵列面板制造方法 - Google Patents

Tft阵列面板、包含它的液晶显示器及tft阵列面板制造方法 Download PDF

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Publication number
CN1858911B
CN1858911B CN2006100794529A CN200610079452A CN1858911B CN 1858911 B CN1858911 B CN 1858911B CN 2006100794529 A CN2006100794529 A CN 2006100794529A CN 200610079452 A CN200610079452 A CN 200610079452A CN 1858911 B CN1858911 B CN 1858911B
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China
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electrode
photoresist layer
gate
gate electrode
tft array
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Chinese (zh)
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CN1858911A (zh
Inventor
朴镕汉
全珍
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Samsung Display Co Ltd
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Samsung Electronics Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
CN2006100794529A 2005-05-02 2006-04-29 Tft阵列面板、包含它的液晶显示器及tft阵列面板制造方法 Active CN1858911B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2005-0036798 2005-05-02
KR1020050036798 2005-05-02
KR1020050036798A KR101216688B1 (ko) 2005-05-02 2005-05-02 박막 트랜지스터 기판 및 이를 포함하는 액정 표시 장치

Publications (2)

Publication Number Publication Date
CN1858911A CN1858911A (zh) 2006-11-08
CN1858911B true CN1858911B (zh) 2012-05-30

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US (1) US7646023B2 (enExample)
JP (1) JP2006313906A (enExample)
KR (1) KR101216688B1 (enExample)
CN (1) CN1858911B (enExample)
TW (1) TWI420669B (enExample)

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KR101889287B1 (ko) * 2008-09-19 2018-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
TWI483038B (zh) 2008-11-28 2015-05-01 Semiconductor Energy Lab 液晶顯示裝置
TWI613489B (zh) 2008-12-03 2018-02-01 半導體能源研究所股份有限公司 液晶顯示裝置
KR101719350B1 (ko) * 2008-12-25 2017-03-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP2010206154A (ja) * 2009-02-09 2010-09-16 Hitachi Displays Ltd 表示装置
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TWI464508B (zh) * 2010-11-22 2014-12-11 Au Optronics Corp 畫素陣列基板以及顯示面板
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KR101923717B1 (ko) * 2012-05-24 2018-11-30 엘지디스플레이 주식회사 액정표시장치 어레이 기판 및 그 제조방법
KR102276146B1 (ko) 2013-09-10 2021-07-13 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR102254619B1 (ko) 2013-11-15 2021-05-24 삼성디스플레이 주식회사 표시 기판 및 그의 제조 방법
KR101682079B1 (ko) * 2013-12-30 2016-12-05 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
CN104979364B (zh) * 2014-04-01 2018-11-13 鸿富锦精密工业（深圳）有限公司 显示阵列基板及显示阵列基板的制造方法
TWI582967B (zh) 2014-04-01 2017-05-11 鴻海精密工業股份有限公司 顯示陣列基板及顯示陣列基板的製造方法
TWI686899B (zh) * 2014-05-02 2020-03-01 日商半導體能源研究所股份有限公司 半導體裝置、觸控感測器、顯示裝置
JP2016048706A (ja) * 2014-08-27 2016-04-07 三菱電機株式会社 アレイ基板およびその製造方法
US10539839B2 (en) 2015-02-12 2020-01-21 Semiconductor Energy Laboratory Co., Ltd. Display device
CN104716197B (zh) * 2015-03-25 2019-06-07 京东方科技集团股份有限公司 一种氧化物薄膜晶体管及制作方法和阵列基板、显示装置
KR102322015B1 (ko) * 2015-04-07 2021-11-05 삼성디스플레이 주식회사 박막트랜지스터 어레이 기판의 제조 방법 및 그에 따라 제조된 박막 트랜지스터 어레이 기판
TWI576646B (zh) 2015-04-30 2017-04-01 群創光電股份有限公司 顯示裝置
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JP2017028165A (ja) * 2015-07-24 2017-02-02 ソニー株式会社 表示装置および撮像装置
CN105470268A (zh) 2016-01-11 2016-04-06 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示装置
JP6255452B2 (ja) * 2016-08-08 2017-12-27 株式会社ジャパンディスプレイ 表示装置及びその製造方法
KR102621447B1 (ko) * 2016-08-31 2024-01-08 엘지디스플레이 주식회사 액정 표시장치
CN106449656A (zh) * 2016-10-26 2017-02-22 京东方科技集团股份有限公司 阵列基板及其制作方法、显示面板和显示装置
KR102263122B1 (ko) 2017-10-19 2021-06-09 삼성디스플레이 주식회사 트랜지스터 표시판
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JP7237633B2 (ja) * 2019-02-14 2023-03-13 株式会社ジャパンディスプレイ 表示装置
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Also Published As

Publication number Publication date
JP2006313906A (ja) 2006-11-16
KR20060114744A (ko) 2006-11-08
KR101216688B1 (ko) 2012-12-31
US20060243979A1 (en) 2006-11-02
TWI420669B (zh) 2013-12-21
TW200703660A (en) 2007-01-16
CN1858911A (zh) 2006-11-08
US7646023B2 (en) 2010-01-12

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