TWI420669B - 薄膜電晶體（ｔｆｔ）陣列基板，包含該基板之液晶顯示器，以及ｔｆｔ陣列基板之製造方法 - Google Patents
薄膜電晶體（ｔｆｔ）陣列基板，包含該基板之液晶顯示器，以及ｔｆｔ陣列基板之製造方法 Download PDFInfo
- Publication number
- TWI420669B TWI420669B TW095114885A TW95114885A TWI420669B TW I420669 B TWI420669 B TW I420669B TW 095114885 A TW095114885 A TW 095114885A TW 95114885 A TW95114885 A TW 95114885A TW I420669 B TWI420669 B TW I420669B
- Authority
- TW
- Taiwan
- Prior art keywords
- light blocking
- electrode
- layer
- gate
- gate electrode
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 114
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 44
- 239000010409 thin film Substances 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title description 6
- 230000000903 blocking effect Effects 0.000 claims description 101
- 239000004065 semiconductor Substances 0.000 claims description 57
- 238000000034 method Methods 0.000 claims description 13
- 229910052732 germanium Inorganic materials 0.000 claims description 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 7
- 239000011358 absorbing material Substances 0.000 claims 3
- 239000010410 layer Substances 0.000 description 184
- 238000010586 diagram Methods 0.000 description 15
- 238000002161 passivation Methods 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050036798A KR101216688B1 (ko) | 2005-05-02 | 2005-05-02 | 박막 트랜지스터 기판 및 이를 포함하는 액정 표시 장치 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200703660A TW200703660A (en) | 2007-01-16 |
| TWI420669B true TWI420669B (zh) | 2013-12-21 |
Family
ID=37233587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095114885A TWI420669B (zh) | 2005-05-02 | 2006-04-26 | 薄膜電晶體（ｔｆｔ）陣列基板，包含該基板之液晶顯示器，以及ｔｆｔ陣列基板之製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7646023B2 (enExample) |
| JP (1) | JP2006313906A (enExample) |
| KR (1) | KR101216688B1 (enExample) |
| CN (1) | CN1858911B (enExample) |
| TW (1) | TWI420669B (enExample) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5303119B2 (ja) * | 2007-06-05 | 2013-10-02 | 株式会社ジャパンディスプレイ | 半導体装置 |
| US7738050B2 (en) | 2007-07-06 | 2010-06-15 | Semiconductor Energy Laboratory Co., Ltd | Liquid crystal display device |
| TWI464510B (zh) * | 2007-07-20 | 2014-12-11 | Semiconductor Energy Lab | 液晶顯示裝置 |
| JP2009049058A (ja) * | 2007-08-14 | 2009-03-05 | Hitachi Displays Ltd | 半導体装置および表示装置 |
| JP5377940B2 (ja) * | 2007-12-03 | 2013-12-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR101499229B1 (ko) | 2008-04-07 | 2015-03-05 | 삼성디스플레이 주식회사 | 색필터를 포함하는 표시 장치 |
| KR101536194B1 (ko) * | 2008-05-19 | 2015-07-13 | 삼성디스플레이 주식회사 | 액정 표시 장치와 그 구동 방법 |
| KR102668391B1 (ko) * | 2008-09-19 | 2024-05-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| TWI483038B (zh) | 2008-11-28 | 2015-05-01 | Semiconductor Energy Lab | 液晶顯示裝置 |
| TWI633371B (zh) | 2008-12-03 | 2018-08-21 | 半導體能源研究所股份有限公司 | 液晶顯示裝置 |
| KR101719350B1 (ko) * | 2008-12-25 | 2017-03-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| JP2010206154A (ja) * | 2009-02-09 | 2010-09-16 | Hitachi Displays Ltd | 表示装置 |
| KR101100959B1 (ko) * | 2010-03-10 | 2011-12-29 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를 구비하는 표시 장치 |
| TWI464508B (zh) * | 2010-11-22 | 2014-12-11 | Au Optronics Corp | 畫素陣列基板以及顯示面板 |
| US9568794B2 (en) * | 2010-12-20 | 2017-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| KR20130092848A (ko) * | 2012-02-13 | 2013-08-21 | 삼성전자주식회사 | 박막 트랜지스터 및 이를 채용한 디스플레이 패널 |
| KR101923717B1 (ko) * | 2012-05-24 | 2018-11-30 | 엘지디스플레이 주식회사 | 액정표시장치 어레이 기판 및 그 제조방법 |
| KR102276146B1 (ko) | 2013-09-10 | 2021-07-13 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
| KR102254619B1 (ko) | 2013-11-15 | 2021-05-24 | 삼성디스플레이 주식회사 | 표시 기판 및 그의 제조 방법 |
| KR101682079B1 (ko) * | 2013-12-30 | 2016-12-05 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
| TWI582967B (zh) | 2014-04-01 | 2017-05-11 | 鴻海精密工業股份有限公司 | 顯示陣列基板及顯示陣列基板的製造方法 |
| CN104979364B (zh) * | 2014-04-01 | 2018-11-13 | 鸿富锦精密工业（深圳）有限公司 | 显示阵列基板及显示阵列基板的制造方法 |
| TWI686899B (zh) * | 2014-05-02 | 2020-03-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置、觸控感測器、顯示裝置 |
| JP2016048706A (ja) * | 2014-08-27 | 2016-04-07 | 三菱電機株式会社 | アレイ基板およびその製造方法 |
| CN114326211B (zh) | 2015-02-12 | 2025-03-28 | 株式会社半导体能源研究所 | 显示装置 |
| CN104716197B (zh) * | 2015-03-25 | 2019-06-07 | 京东方科技集团股份有限公司 | 一种氧化物薄膜晶体管及制作方法和阵列基板、显示装置 |
| KR102322015B1 (ko) * | 2015-04-07 | 2021-11-05 | 삼성디스플레이 주식회사 | 박막트랜지스터 어레이 기판의 제조 방법 및 그에 따라 제조된 박막 트랜지스터 어레이 기판 |
| TWI576646B (zh) * | 2015-04-30 | 2017-04-01 | 群創光電股份有限公司 | 顯示裝置 |
| CN104992948B (zh) * | 2015-06-03 | 2018-07-06 | 京东方科技集团股份有限公司 | 一种薄膜晶体管、阵列基板及其制作方法 |
| JP2017028165A (ja) * | 2015-07-24 | 2017-02-02 | ソニー株式会社 | 表示装置および撮像装置 |
| CN105470268A (zh) * | 2016-01-11 | 2016-04-06 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示装置 |
| JP6255452B2 (ja) * | 2016-08-08 | 2017-12-27 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
| KR102621447B1 (ko) * | 2016-08-31 | 2024-01-08 | 엘지디스플레이 주식회사 | 액정 표시장치 |
| CN106449656A (zh) * | 2016-10-26 | 2017-02-22 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示面板和显示装置 |
| KR102263122B1 (ko) * | 2017-10-19 | 2021-06-09 | 삼성디스플레이 주식회사 | 트랜지스터 표시판 |
| JP6901382B2 (ja) | 2017-11-29 | 2021-07-14 | パナソニック液晶ディスプレイ株式会社 | 液晶表示パネル |
| CN108598118A (zh) | 2018-04-26 | 2018-09-28 | 京东方科技集团股份有限公司 | 一种显示面板及显示装置 |
| JP7237633B2 (ja) * | 2019-02-14 | 2023-03-13 | 株式会社ジャパンディスプレイ | 表示装置 |
| US11113095B2 (en) | 2019-04-30 | 2021-09-07 | Automation Anywhere, Inc. | Robotic process automation system with separate platform, bot and command class loaders |
| KR20210100795A (ko) * | 2020-02-06 | 2021-08-18 | 삼성디스플레이 주식회사 | 표시 장치 |
| JP7646412B2 (ja) * | 2021-03-26 | 2025-03-17 | 株式会社ジャパンディスプレイ | 表示装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05196950A (ja) * | 1991-09-26 | 1993-08-06 | Toshiba Corp | 液晶表示装置 |
| US20030081159A1 (en) * | 2001-10-29 | 2003-05-01 | Kyoung-Su Ha | Transflective liquid crystal display device and method of fabricating the same |
| US20030202132A1 (en) * | 1999-07-31 | 2003-10-30 | Dug-Jin Park | Liquid crystal display device and method for fabricating the same |
| US20030232456A1 (en) * | 2002-05-28 | 2003-12-18 | Chung-Hsien Yang | Thin film transistors of a thin film transistor liquid crystal display and method for fabricating the same |
| US20040246409A1 (en) * | 2003-06-09 | 2004-12-09 | Jin Jeon | Array substrate, method of manufacturing the same and liquid crystal display apparatus having the same |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6452129A (en) * | 1987-08-24 | 1989-02-28 | Toshiba Corp | Thin film transistor |
| JPH0449674A (ja) * | 1990-06-19 | 1992-02-19 | Nec Corp | 薄膜トランジスタ |
| JPH09329808A (ja) | 1996-06-13 | 1997-12-22 | Toshiba Corp | 液晶表示装置 |
| JP2000122093A (ja) | 1998-10-20 | 2000-04-28 | Sharp Corp | 反射型液晶表示装置 |
| JP2002141509A (ja) * | 2000-11-01 | 2002-05-17 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ及び液晶表示装置 |
| JP2002250913A (ja) | 2001-02-27 | 2002-09-06 | Matsushita Electric Ind Co Ltd | 液晶表示装置とその製造方法 |
| CN100504553C (zh) * | 2004-02-06 | 2009-06-24 | 三星电子株式会社 | 薄膜晶体管阵列面板及包括该薄膜晶体管阵列面板的液晶显示器 |
-
2005
- 2005-05-02 KR KR1020050036798A patent/KR101216688B1/ko not_active Expired - Lifetime
-
2006
- 2006-04-26 TW TW095114885A patent/TWI420669B/zh active
- 2006-04-28 JP JP2006126558A patent/JP2006313906A/ja active Pending
- 2006-04-29 CN CN2006100794529A patent/CN1858911B/zh active Active
- 2006-05-02 US US11/416,934 patent/US7646023B2/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05196950A (ja) * | 1991-09-26 | 1993-08-06 | Toshiba Corp | 液晶表示装置 |
| US20030202132A1 (en) * | 1999-07-31 | 2003-10-30 | Dug-Jin Park | Liquid crystal display device and method for fabricating the same |
| US20030081159A1 (en) * | 2001-10-29 | 2003-05-01 | Kyoung-Su Ha | Transflective liquid crystal display device and method of fabricating the same |
| US20030232456A1 (en) * | 2002-05-28 | 2003-12-18 | Chung-Hsien Yang | Thin film transistors of a thin film transistor liquid crystal display and method for fabricating the same |
| US20040246409A1 (en) * | 2003-06-09 | 2004-12-09 | Jin Jeon | Array substrate, method of manufacturing the same and liquid crystal display apparatus having the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1858911A (zh) | 2006-11-08 |
| US20060243979A1 (en) | 2006-11-02 |
| US7646023B2 (en) | 2010-01-12 |
| CN1858911B (zh) | 2012-05-30 |
| KR101216688B1 (ko) | 2012-12-31 |
| JP2006313906A (ja) | 2006-11-16 |
| KR20060114744A (ko) | 2006-11-08 |
| TW200703660A (en) | 2007-01-16 |
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