KR101216688B1 - 박막 트랜지스터 기판 및 이를 포함하는 액정 표시 장치 - Google Patents

박막 트랜지스터 기판 및 이를 포함하는 액정 표시 장치 Download PDF

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Publication number
KR101216688B1
KR101216688B1 KR1020050036798A KR20050036798A KR101216688B1 KR 101216688 B1 KR101216688 B1 KR 101216688B1 KR 1020050036798 A KR1020050036798 A KR 1020050036798A KR 20050036798 A KR20050036798 A KR 20050036798A KR 101216688 B1 KR101216688 B1 KR 101216688B1
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South Korea
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light blocking
electrode
gate electrode
semiconductor layer
gate
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Expired - Lifetime
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KR1020050036798A
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Korean (ko)
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KR20060114744A (ko
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박용한
전진
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삼성디스플레이 주식회사
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Priority to KR1020050036798A priority Critical patent/KR101216688B1/ko
Priority to TW095114885A priority patent/TWI420669B/zh
Priority to JP2006126558A priority patent/JP2006313906A/ja
Priority to CN2006100794529A priority patent/CN1858911B/zh
Priority to US11/416,934 priority patent/US7646023B2/en
Publication of KR20060114744A publication Critical patent/KR20060114744A/ko
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Publication of KR101216688B1 publication Critical patent/KR101216688B1/ko
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
KR1020050036798A 2005-05-02 2005-05-02 박막 트랜지스터 기판 및 이를 포함하는 액정 표시 장치 Expired - Lifetime KR101216688B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020050036798A KR101216688B1 (ko) 2005-05-02 2005-05-02 박막 트랜지스터 기판 및 이를 포함하는 액정 표시 장치
TW095114885A TWI420669B (zh) 2005-05-02 2006-04-26 薄膜電晶體（ｔｆｔ）陣列基板，包含該基板之液晶顯示器，以及ｔｆｔ陣列基板之製造方法
JP2006126558A JP2006313906A (ja) 2005-05-02 2006-04-28 薄膜トランジスタ基板、これを含む液晶表示装置及び薄膜トランジスタ基板の製造方法
CN2006100794529A CN1858911B (zh) 2005-05-02 2006-04-29 Tft阵列面板、包含它的液晶显示器及tft阵列面板制造方法
US11/416,934 US7646023B2 (en) 2005-05-02 2006-05-02 TFT array panel, liquid crystal display including same, and method of manufacturing TFT array panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050036798A KR101216688B1 (ko) 2005-05-02 2005-05-02 박막 트랜지스터 기판 및 이를 포함하는 액정 표시 장치

Publications (2)

Publication Number Publication Date
KR20060114744A KR20060114744A (ko) 2006-11-08
KR101216688B1 true KR101216688B1 (ko) 2012-12-31

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KR1020050036798A Expired - Lifetime KR101216688B1 (ko) 2005-05-02 2005-05-02 박막 트랜지스터 기판 및 이를 포함하는 액정 표시 장치

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US (1) US7646023B2 (enExample)
JP (1) JP2006313906A (enExample)
KR (1) KR101216688B1 (enExample)
CN (1) CN1858911B (enExample)
TW (1) TWI420669B (enExample)

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JP5303119B2 (ja) * 2007-06-05 2013-10-02 株式会社ジャパンディスプレイ 半導体装置
US7738050B2 (en) * 2007-07-06 2010-06-15 Semiconductor Energy Laboratory Co., Ltd Liquid crystal display device
TWI464510B (zh) * 2007-07-20 2014-12-11 Semiconductor Energy Lab 液晶顯示裝置
JP2009049058A (ja) * 2007-08-14 2009-03-05 Hitachi Displays Ltd 半導体装置および表示装置
JP5377940B2 (ja) * 2007-12-03 2013-12-25 株式会社半導体エネルギー研究所 半導体装置
KR101499229B1 (ko) 2008-04-07 2015-03-05 삼성디스플레이 주식회사 색필터를 포함하는 표시 장치
KR101536194B1 (ko) * 2008-05-19 2015-07-13 삼성디스플레이 주식회사 액정 표시 장치와 그 구동 방법
KR101889287B1 (ko) * 2008-09-19 2018-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
TWI483038B (zh) 2008-11-28 2015-05-01 Semiconductor Energy Lab 液晶顯示裝置
TWI613489B (zh) 2008-12-03 2018-02-01 半導體能源研究所股份有限公司 液晶顯示裝置
KR101719350B1 (ko) * 2008-12-25 2017-03-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP2010206154A (ja) * 2009-02-09 2010-09-16 Hitachi Displays Ltd 表示装置
KR101100959B1 (ko) * 2010-03-10 2011-12-29 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를 구비하는 표시 장치
TWI464508B (zh) * 2010-11-22 2014-12-11 Au Optronics Corp 畫素陣列基板以及顯示面板
US9568794B2 (en) 2010-12-20 2017-02-14 Semiconductor Energy Laboratory Co., Ltd. Display device
KR20130092848A (ko) * 2012-02-13 2013-08-21 삼성전자주식회사 박막 트랜지스터 및 이를 채용한 디스플레이 패널
KR101923717B1 (ko) * 2012-05-24 2018-11-30 엘지디스플레이 주식회사 액정표시장치 어레이 기판 및 그 제조방법
KR102276146B1 (ko) 2013-09-10 2021-07-13 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR102254619B1 (ko) 2013-11-15 2021-05-24 삼성디스플레이 주식회사 표시 기판 및 그의 제조 방법
KR101682079B1 (ko) * 2013-12-30 2016-12-05 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
CN104979364B (zh) * 2014-04-01 2018-11-13 鸿富锦精密工业（深圳）有限公司 显示阵列基板及显示阵列基板的制造方法
TWI582967B (zh) 2014-04-01 2017-05-11 鴻海精密工業股份有限公司 顯示陣列基板及顯示陣列基板的製造方法
TWI686899B (zh) * 2014-05-02 2020-03-01 日商半導體能源研究所股份有限公司 半導體裝置、觸控感測器、顯示裝置
JP2016048706A (ja) * 2014-08-27 2016-04-07 三菱電機株式会社 アレイ基板およびその製造方法
US10539839B2 (en) 2015-02-12 2020-01-21 Semiconductor Energy Laboratory Co., Ltd. Display device
CN104716197B (zh) * 2015-03-25 2019-06-07 京东方科技集团股份有限公司 一种氧化物薄膜晶体管及制作方法和阵列基板、显示装置
KR102322015B1 (ko) * 2015-04-07 2021-11-05 삼성디스플레이 주식회사 박막트랜지스터 어레이 기판의 제조 방법 및 그에 따라 제조된 박막 트랜지스터 어레이 기판
TWI576646B (zh) 2015-04-30 2017-04-01 群創光電股份有限公司 顯示裝置
CN104992948B (zh) * 2015-06-03 2018-07-06 京东方科技集团股份有限公司 一种薄膜晶体管、阵列基板及其制作方法
JP2017028165A (ja) * 2015-07-24 2017-02-02 ソニー株式会社 表示装置および撮像装置
CN105470268A (zh) 2016-01-11 2016-04-06 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示装置
JP6255452B2 (ja) * 2016-08-08 2017-12-27 株式会社ジャパンディスプレイ 表示装置及びその製造方法
KR102621447B1 (ko) * 2016-08-31 2024-01-08 엘지디스플레이 주식회사 액정 표시장치
CN106449656A (zh) * 2016-10-26 2017-02-22 京东方科技集团股份有限公司 阵列基板及其制作方法、显示面板和显示装置
KR102263122B1 (ko) 2017-10-19 2021-06-09 삼성디스플레이 주식회사 트랜지스터 표시판
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JP7237633B2 (ja) * 2019-02-14 2023-03-13 株式会社ジャパンディスプレイ 表示装置
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KR20210100795A (ko) * 2020-02-06 2021-08-18 삼성디스플레이 주식회사 표시 장치
JP7646412B2 (ja) * 2021-03-26 2025-03-17 株式会社ジャパンディスプレイ 表示装置

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Publication number Publication date
JP2006313906A (ja) 2006-11-16
KR20060114744A (ko) 2006-11-08
CN1858911B (zh) 2012-05-30
US20060243979A1 (en) 2006-11-02
TWI420669B (zh) 2013-12-21
TW200703660A (en) 2007-01-16
CN1858911A (zh) 2006-11-08
US7646023B2 (en) 2010-01-12

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