CN1748296A - 等离子体处理方法、半导体基板以及等离子体处理装置 - Google Patents
等离子体处理方法、半导体基板以及等离子体处理装置 Download PDFInfo
- Publication number
- CN1748296A CN1748296A CNA2004800036633A CN200480003663A CN1748296A CN 1748296 A CN1748296 A CN 1748296A CN A2004800036633 A CNA2004800036633 A CN A2004800036633A CN 200480003663 A CN200480003663 A CN 200480003663A CN 1748296 A CN1748296 A CN 1748296A
- Authority
- CN
- China
- Prior art keywords
- plasma
- nitrogen
- dielectric film
- semiconductor substrate
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 73
- 239000004065 semiconductor Substances 0.000 title claims abstract description 53
- 238000012545 processing Methods 0.000 title claims abstract description 38
- 238000003672 processing method Methods 0.000 title 1
- 230000003647 oxidation Effects 0.000 claims abstract description 26
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 122
- 229910052757 nitrogen Inorganic materials 0.000 claims description 61
- 239000007789 gas Substances 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 37
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052760 oxygen Inorganic materials 0.000 claims description 23
- 239000001301 oxygen Substances 0.000 claims description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 14
- -1 forms Substances 0.000 claims description 11
- 230000008676 import Effects 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 5
- 238000009832 plasma treatment Methods 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 4
- 150000003376 silicon Chemical class 0.000 claims 2
- 230000014509 gene expression Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000005264 electron capture Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- OLBVUFHMDRJKTK-UHFFFAOYSA-N [N].[O] Chemical compound [N].[O] OLBVUFHMDRJKTK-UHFFFAOYSA-N 0.000 description 4
- 239000003595 mist Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 4
- 230000036962 time dependent Effects 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910006293 Si—N—O Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 206010011906 Death Diseases 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000010835 comparative analysis Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Images
Classifications
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61P—SPECIFIC THERAPEUTIC ACTIVITY OF CHEMICAL COMPOUNDS OR MEDICINAL PREPARATIONS
- A61P31/00—Antiinfectives, i.e. antibiotics, antiseptics, chemotherapeutics
- A61P31/04—Antibacterial agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02249—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by combined oxidation and nitridation performed simultaneously
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/28—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases more than one element being applied in one step
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/34—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases more than one element being applied in more than one step
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/005—Oxydation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
- H01L21/3144—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Plasma & Fusion (AREA)
- Communicable Diseases (AREA)
- Oncology (AREA)
- General Chemical & Material Sciences (AREA)
- Medicinal Chemistry (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Pharmacology & Pharmacy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Animal Behavior & Ethology (AREA)
- General Health & Medical Sciences (AREA)
- Public Health (AREA)
- Veterinary Medicine (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
本发明对于半导体基板的表面通过利用了微波的等离子体,同时进行等离子体氧化处理和氮化处理,还根据需要,在基于所述那种等离子体氧氮化处理而形成绝缘膜之后,再对该绝缘膜进一步进行等离子体氮化处理。由此,可以形成电气性能良好的绝缘膜(硅氧化膜)。
Description
技术领域
本发明涉及使用等离子体在半导体基板的表面上形成绝缘膜的等离子体处理方法以及由此制造的半导体基板,以及用于实施等离子体处理方法的等离子体处理装置。
背景技术
至今,在硅基板上形成的绝缘膜多使用通过在1000℃以上的高温下进行氧化处理而形成的热氧化膜。最近,由于精微化技术的进步,需要减少仅仅由热能量而进行Si与O的反应的这种氧化膜(绝缘膜)的厚度。
但是,如果采用在高温下进行的热氧化处理而得到绝缘膜的形成方法,随着厚度变薄,漏电流等增大而难于得到可靠性高的绝缘膜。另外,对于通过绝缘膜使电流流动而进行读写的非易失性存储器,还有由于在绝缘膜中被俘获的空穴或者电子,造成存储器特性的降低。特别空穴的俘获影响产品的可靠性。
为了解决该问题,与热氧化法反应机制不同而使用等离子体的活性原子态氧(以下称“氧自由基”)而进行的氧化处理被付诸实现。通过该方法,在将等离子体的电子温度保持在低温状态下,可以形成氧化膜,其结果是可以降低被处理基板和处理装置内壁的损伤。另外,通过降低空穴俘获,可以不降低可靠性而形成厚度薄的氧化膜。
作为使用等离子体的氧化膜的形成方法,有在日本国专利公开公报的特开平11-293470号公报中记载的方法。根据该方法,在向处理室内导入含硅气体以及含氧气体后生成这些气体的等离子体,在基板上堆积硅氧化膜而形成膜的硅氧化膜的成膜方法中,除了前述含硅气体以及含氧气体之外,向处理室内导入氢气,在处理室内生成含氢的等离子体。由此,可以得到与热氧化膜相匹敌的良好的膜质量。
但是,使用等离子体在基板表面上形成的氧化膜(绝缘膜),与通过高温氧化处理得到的氧化膜相比,被认为电子俘获特性不好,所以电应力变弱,作为成品的特性变坏。
另外,为了改良热氧化膜的诸特性,还在热氧化后进行热氮化。氮化弥补了在热氧化时发生的不完全的SiO的结合,改善各种特性。但是,使用热氮化法时,氮的深度方向的分布偏向基板界面部,均匀的氧化膜的改善不充分。所以,为了提高电应力弱的等离子体氧化膜的特性,与热氧化·氮化膜同样研究了在等离子体氧化处理后进行氮化处理的方法。
发明内容
本发明是鉴于上述那样的状况,而以提供形成电气特性良好的绝缘膜(硅氧氮化膜)的方法以及通过该方法制造的半导体基板和等离子体处理装置为目的。
为了达到上述的目的,在涉及本发明的第1方式的等离子体处理方法中,对于半导体基板的表面同时进行等离子体氧化处理和等离子体氮化处理。由此,改善被形成的绝缘膜的俘获特性。另外,所谓同时进行氧化和氮化是指至少稳定地进行各自的处理的主要处理期间是同时期的,各自的处理的开始和结束时间也可以不同。
等离子体的电子密度在1.0×1012(1/cm3)以上、而电子温度在1.0(eV)以下是优选的。另外,作为等离子体源,利用微波的等离子体源可以容易地生成具有这些值的电子密度、电子温度的等离子体。而且利用微波的等离子体可以平坦地形成平的等离子体区域,适于本发明那样的氧氮化膜。
也可以通过上述那样的等离子体氧氮化处理而形成绝缘膜后,对于该绝缘膜再进行等离子体氮化处理。由此,可以进行在热氮化、热氧氮化处理中难于控制的氮深度方向的分布控制。另外,在同时进行氧化、氮化处理时,可以通过进行氧气气体混合比的控制,控制氮分布。
改变氧气氮气的混合比、即流量比例的话,可以改变绝缘膜中的氮浓度的峰值。所以,在这种情况下,在形成前述那样的绝缘膜后不需要进行等离子体的氮化处理。根据发明者的发现,氧气与氮气的流量比率设定为1∶4~1∶6的话,如后述的那样,可分别在与基板的界面侧和绝缘膜的表面侧形成氮浓度峰值。
涉及本发明的第2方式的半导体基板,氮从绝缘膜的表面向着到与硅基板的界面的厚度方向扩散,在比绝缘膜的表面更加靠近界面的地方具有氮分布的峰值。或者,在绝缘膜的表面附近和界面附近的2处具有氮分布的峰值。由此,可以得到具有改善了等离子体形成的绝缘膜的俘获特性的绝缘膜的半导体基板。在具有这种构造的半导体基板上,防止在后工序中的不必要的再氧化,另外对于被注入的杂质具有阻挡。所以,可以得到不容易受半导体制造工序的条件的影响的、具有稳定的绝缘膜的半导体基板。
本发明的第3方式,在对半导体基板进行等离子体处理的等离子体处理装置,具有:收容前述半导体基板的处理容器、向前述处理容器导入微波的微波导入部、向前述处理容器供给处理气体的气体供给部,前述气体供给部向前述处理容器同时供给氧和氮,对前述半导体基板的表面同时进行氧化处理和氮化处理,形成绝缘膜。
在该情况下,也可以构成为,前述气体供给部在前述半导体基板的氧化·氮化处理之后,向前述处理容器供给氮,再对前述绝缘膜进一步进行氮化处理。
根据该等离子体处理装置,可以很好地实施前述等离子体处理方法,另外可以很好地制造前述的半导体基板。
附图说明
图1是表示涉及本发明的实施例的等离子体处理装置的构成的一个例子的示意图(断面图)。
图2(A)、(B)是表示实施例1的等离子体处理工序的一部分的示意图。
图3(A)是说明俘获特性的图,(B)是作为一个例子表示测量俘获特性的示意的图。
图4是表示各种绝缘膜的俘获特性的图。
图5是表示直到绝缘破坏为止的随时间变化的特性的表。
图6(A)、(B)是表示实施例2的等离子体处理工序的一部分的示意图。
图7是表示根据本发明的实施例1得到的绝缘膜中的氮分布的图。
图8是表示根据本发明的实施例2得到的绝缘膜中的氮分布的图。
具体实施方式
图1表示用于本发明的等离子体基板处理装置10的简要构成的一个例子。用于本发明的等离子体处理装置10具有:具备了保持作为被处理基板的硅晶片W的基板保持台12的处理容器11,处理容器11内的气体(gas)通过未被图示的排气泵从排气口11A以及11B排气。另外基板保持台12具有加热硅晶片W的加热器功能。
在处理容器11的装置上方,与基板保持台12上的硅晶片W相对应而设置开口部。该开口部被由石英和氧化铝组成的电介质板13堵塞,在电介质板13的上部(外侧),设置起天线作用的槽板14。在槽板14的更上方(外侧),配置由石英、氧化铝、氮化铝等组成的电介质板15。该电介质板15也被称为滞波板或者波长缩短板。在电介质板15的上部(外侧)配置冷却板16。在冷却板16的内部设置流通冷媒的冷媒路16a。另外,在处理容器11的上端中央,设置导入微波的同轴波导管18。
在基板保持台12的周围,配置由铝构成的气体挡板(隔板)26。在气体挡板26的下面设置石英罩28。
在处理容器11的内壁上,设置为了导入用于等离子体处理的气体的气体喷嘴22。同样地,在处理容器11的内壁的内侧上,按照包围容器整体那样形成温度调整媒体流通路24。
接下来表示使用该等离子体处理装置10实施本发明的一个例子。首先,将作为半导体基板的硅晶片W设置在等离子体处理装置10的处理容器11中之后,通过排气口11A、11B进行处理容器11内部的空气的排气,处理容器11的内部被设定到规定的处理压力上。然后,在被设置了硅晶片W的处理容器11中从气体喷嘴22,将非活性气体和氧气和氮气进行预先混合后导入。这些气体也可以被导入具有多个气体喷嘴22、而从各喷嘴分别导入处理容器11。或者,也可以将多个分别流通气体的配管在气体喷嘴22的附近汇成一体,在喷嘴附近一边将这些气体进行混合,一边导入。不管怎样,只要在同一等离子体处理机会按照同时存在这些气体那样供给的话,用哪一种方法供给都可以。
另外,通过同轴波导管18供给的几GHz的频率的微波通过电介质板15、槽板14、电介质板13被导入处理容器11中。由该微波激发等离子体,从非活性气体、氧气和氮气的混合气体中生成氧自由基和氮自由基。
这时的等离子体的电子密度在1.0×1012(1/cm3)以上,而电子温度在1.0(eV)以下是优选的。由此可以抑制对于所形成的氧氮化膜的破坏。
在这一点上,例如其他的高密度生成用的等离子体源,例如ECR等离子体对于基板给予等离子体的破坏的可能性大。即,存在对于基板蓄积不必要的电荷,或者切断形成了的Si-N-O的链的危险,不能形成质量好的氧氮化膜。
所以,如果用实施例那样由利用了微波的高密度、低电子温度的等离子体进行处理的话,由于没有那种蓄积不必要的电荷、或者切断形成了的Si-N-O的链的危险,所以可以形成质量好的氧氮化膜。
另外,由于是那种高密度、低电子温度的等离子体,所以可以使硅晶片W相对于等离子体接近配置,所以可以抑制成膜速度的下降。
即,虽然在现有的等离子体源、例如ECR等离子体中,由于是高能量,所以硅晶片W需要从等离子体区域适当离开配置,若如此,发生的氧自由基在到达硅晶片W之前其寿命早结束的概率大,所以带来由此引起的成膜速度的降低。
在该实施例中,通过利用微波的等离子体进行处理,所以可以将硅晶片W接近等离子体那样配置,其结果是在氧自由基的寿命结束之前,可以使多数的氧自由基到达硅晶片W。所以,可以不降低成膜速度,形成好的氧化膜、氧氮化膜。
到达了硅基板21的表面氧自由基和氮自由基是指图2(B)所示的那样对硅基板21的表面进行氧氮化处理,形成所需厚度(例如,~10nm)的硅氧氮化膜22。这样,可以得到具有同时进行氧化和氮化而形成的绝缘膜的半导体基板(实施例1)。
另外,为了进行比较,准备了具有热氧化膜的半导体基板(现有的例子)、具有等离子体氧化后进行等离子体氮化的绝缘膜的半导体基板(比较例1)和仅仅有等离子体氧化膜的半导体基板(比较例2)。然后,与前述的实施例1一起测量俘获(TRAP)特性并进行比较评价。将其结果在图4(A)、(B)中表示。
电子的俘获的构成在图3(A)中作为例子表示。例如,在进行闪存储器30的改写时,电子被从半导体基板31通过绝缘膜(氧化膜)32拉入浮动栅33。在这时,绝缘膜32的膜质不好的话,许多电子35留在该绝缘膜中,而逐渐使电子(-)不通。将这种现象成为俘获,在该例子当中,闪存储器30被改写后,由于该被俘获的电子35,存储器的写入特性变坏。
俘获特性的测量,例如如图3(B)将半导体基板作成MOS电容器36后测量。在如前述那样形成的硅基板21上设置绝缘膜(氧化膜)22,通过按照在其上面流过规定电流那样设置电极37而形成该MOS电容器。通过测量该电极37和半导体基板21之间的电位差,测量俘获特性。
在使用N-MOS电容器的情况下,在电极37上加负电压,测量电压随时间的变化。一般地,测量数据与图4(A)、(B)大有区别,在测量初期(图4B),空穴俘获被观测,电子俘获从以后的测量(图4A)观测到。加在半导体基板和电极之间的电压的初期值随着时间的经过渐渐地转向负侧。表示出偏转的电压值愈大则被俘获的电子就愈多,电子就变得不容易通过绝缘膜。如果是前述那样的闪存储器的话,在写入时,俘获愈大,则电子愈难通过,所以不容易写入,结果是可以看到写入的特性变坏。
图4将这样测量了的电子的俘获特性用表示与初始电压的偏差的关系来表示的。横轴表示被标准化了的时间,纵轴表示与初始电压值的偏差(Vg-shift)。该偏差是被加的初始电压值和随时间变化的绝缘膜的两端之间的测量电压之差。所以,显示电子俘获增加的话,则向负侧偏移。
实线表示根据现有例子的热氧化膜得到的结果,而单点划线表示具有根据本发明的实施例1的同时进行等离子体氧化和等离子体氮化而生成的等离子体氧氮化膜(绝缘膜)的半导体基板。另外,双点划线表示具有在等离子体氧化后进行等离子体氮化而生成的比较例1的绝缘膜的半导体基板,虚线表示具有等离子体氧化膜的比较例2的半导体基板。由图可知,相对于实施例1具有与现有的热氧化膜几乎相同的良好的特性,任意一个比较例因电子俘获的量多而作为绝缘膜的性能不够充分。
另外,为了比较一般的电气特性,对于施加电荷流电流时直到绝缘破坏为止的随时间变化的特性(TDDB:Time Dependent DielectricBreakdown)以及漏(leak)电流,针对前述试样分别求得的值在图5的表中表示。在此,将热氧化膜的值作为基准进行相对评价。另外,在该表中按照可以更加综合地把握绝缘膜的特性那样,将图4所示的俘获特性作为定性的表现而加以标记。
由该结果可以知道,在TDDB、漏电流中的任何一个中,利用等离子体得到的绝缘膜相对于现有的热氧化膜表现出同等或者更高的特性。对于TDDB根据本发明的实施例1特别良好,另外对于漏电流利用等离子体而形成的绝缘膜表现出超过现有例子的特性。另外,空穴俘获被认为是决定绝缘膜寿命(TDDB)的要素,与电子俘获一起愈少,则绝缘膜愈良好。
接下来,使用该等离子体处理装置10表示实施本发明的另一个例子。
不需要将在前述的实施例1中得到的半导体基板从处理容器11中取出,而继续设置在处理容器11中。在实施例1中使用的气体等通过排气口11A、11B从处理容器11排出。然后,从气体喷嘴22将非活性气体和氮气混合后导入处理容器11中。
另外,通过同轴波导管18供给的频率为几GHz的微波通过电介质板15、槽板14、电介质板13被导入处理容器11中。由该微波激发等离子体,从已经被导入的非活性气体和氮气的混合气体中生成氮自由基。
到达了半导体基板的表面的氮自由基如图6(B)所示的那样将位于半导体基板表面的绝缘膜22进一步进行氮化处理,形成所需厚度(例如,~10nm)的硅氧氮化膜22A。如此,得到了具有在同时进行氧化和氮化之后进一步进行了氮化处理的绝缘膜22A的半导体基板(实施例2)。
对于这样得到的根据本发明的半导体基板,将调查绝缘膜厚度方向的氮分布状况的结果在图7中表示。在图7中,横轴表示蚀刻时间。表示出与绝缘膜的厚度方向的距离相对应,时间愈多则被蚀刻的愈多,距离绝缘膜的表面就愈远而变深的情况。纵轴表示氮的相对频谱强度,强度愈大,则氮大量分布而存在。
图7表示对于实施例1的氮分布,氮至少沿从绝缘膜的表面到与半导体基板的界面的厚度方向扩散,在比表面更加靠近界面的地方具有氮分布的峰值。由此,可以得到具备良好俘获特性的绝缘膜的半导体基板。
图8表示对于实施例2的氮分布,绝缘膜中的氮分布的峰值,在表面的附近和界面附近的2处发生。由此,除了等离子体形成的绝缘膜的俘获特性得到改善之外,防止在后续工序中的再氧化,相对于被注入的杂质形成阻挡。所以可以得到不易受到半导体制造工序条件影响的具有稳定的绝缘膜的半导体基板。
这样,在实施例2中,通过设定适当的处理条件,可以改变氮分布的峰值位置。由此,可以进行对于在现有的高温氧氮化处理中难于控制的氮分布的绝缘膜厚度方向的控制。
在如实施例2那样同时进行了氧化和氮化之后,即使不再进行氮化处理,如图8所示的那样,可以形成绝缘膜中的氮分布峰值在表面的附近和界面附近的2处发生的绝缘膜。
即,首先在处理容器11内使氧气和非活性气体等离子体化,对于硅晶片W形成氧化膜。接下来,将非活性气体、氧气和氮气的混合气体导入处理容器11内,进行等离子体化,对于硅晶片W进行氧氮化处理,形成氧氮化膜。例如在形成8nm的绝缘膜的情况下,使氧化膜的厚度为6nm,氧氮化膜的厚度为2nm。那时,设定氧气和氮气的混合气体的流量比为1∶4~1∶6左右。
如此,可以形成绝缘膜中的氮分布峰值在表面的附近和界面附近的2处发生的绝缘膜。
如以上说明的那样,根据本发明,由于对于半导体基板的表面同时进行等离子体的氧化处理和等离子体的氮化处理,形成的绝缘膜的俘获特性得到了改善。另外,从TDDB和漏电流来看的话,可以得到比现有好的多的绝缘膜。
另外,在上述那样的等离子体氧化·氮化处理之后,再进行等离子体氮化处理的情况下,可以进行在高温氧氮化处理中难于控制的氮深度方向的分布的控制。其结果是,可以与用途相对应而得到适当特性的氧氮化膜。
如以上那样,根据本发明,即使在低温下形成绝缘膜也可以得到具有电气特性和可靠性能够与热绝缘膜相匹敌或者超过热绝缘膜的半导体基板。
在产业上利用的可能性
本发明对于半导体装置、特别是非易失性存储器的绝缘膜的形成是有用的。
Claims (13)
1.一种使用等离子体对于处理容器内的半导体基板进行处理的等离子体处理方法,其特征在于,具有:
对所述半导体基板的表面同时进行氧化处理和氮化处理的绝缘膜形成工序。
2.如权利要求1所述的等离子体处理方法,其特征在于,具有:
在所述绝缘膜形成工序后,再对该绝缘膜进行氮化处理的工序。
3.一种使用等离子体对于处理容器内的半导体基板形成绝缘膜的等离子体处理方法,其特征在于,具有:
在同一处理时至少供给非活性气体和氧气和氮气的气体供给工序;和
通过该供给的气体和微波激发等离子体的等离子体激发工序。
4.如权利要求3所述的等离子体处理方法,其特征在于,
在所述等离子体激发工序后,还具有:在同一处理时至少供给非活性气体和氮气的气体供给工序;和通过该供给的气体和微波激发等离子体的等离子体激发工序。
5.如权利要求3所述的等离子体处理方法,其特征在于,
所述等离子体的电子密度在1.0×1012(1/cm3)以上,所述等离子体的电子温度在1.0(eV)以下。
6.如权利要求3所述的等离子体处理方法,其特征在于,
改变氧气和氮气的流量比例,而改变绝缘膜中的氮浓度的峰值。
7.如权利要求6所述的等离子体处理方法,其特征在于,
氧气与氮气的流量比率为1∶4~1∶6。
8.一种在半导体设备中使用的半导体基板,其特征在于,
具有通过如下两个工序而形成的绝缘膜:在同一处理时至少供给非活性气体和氧气和氮气的气体供给工序;和通过该供给的气体和微波激发等离子体的等离子体激发工序。
9.如权利要求8所述的半导体基板,其特征在于,
氧气与氮气的流量比率为1∶4~1∶6。
10.一种半导体基板,其特征在于,包括:
硅基板;和在该硅基板的表面上形成的绝缘膜,
氮在从所述绝缘膜的表面到与硅基板的界面的厚度方向扩散,
在比所述绝缘膜的表面更加靠近所述界面的地方具有氮分布的峰值。
11.一种半导体基板,其特征在于,包括:
硅基板;和在该硅基板的表面上形成的绝缘膜,
氮在从所述绝缘膜的表面到与硅基板的界面的厚度方向扩散,
在所述绝缘膜的表面附近和所述界面附近的2处具有氮分布的峰值。
12.一种对半导体基板进行等离子体处理的等离子体处理装置,其特征在于,该等离子体处理装置包括:
收容所述半导体基板的处理容器;
向所述处理容器导入微波的微波导入部;和
向所述处理容器供给处理气体的气体供给部,
通过所述气体供给部对所述处理容器在同时期供给氧和氮,对所述半导体基板的表面同时进行氧化处理和氮化处理,形成绝缘膜。
13.如权利要求12所述的等离子体处理装置,其特征在于,
所述气体供给部在所述半导体基板的氧化·氮化处理之后,向所述处理容器供给氮,对所述绝缘膜进一步进行氮化处理。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003029530 | 2003-02-06 | ||
JP029530/2003 | 2003-02-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1748296A true CN1748296A (zh) | 2006-03-15 |
CN100429753C CN100429753C (zh) | 2008-10-29 |
Family
ID=32844238
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800036633A Expired - Fee Related CN100429753C (zh) | 2003-02-06 | 2004-02-05 | 等离子体处理方法、半导体基板以及等离子体处理装置 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7807234B2 (zh) |
JP (1) | JP4402044B2 (zh) |
KR (1) | KR100800639B1 (zh) |
CN (1) | CN100429753C (zh) |
TW (1) | TW200423825A (zh) |
WO (1) | WO2004070816A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101405846B (zh) * | 2006-08-28 | 2010-09-29 | 国立大学法人名古屋大学 | 等离子体氧化处理方法及装置 |
CN108166066A (zh) * | 2017-12-25 | 2018-06-15 | 天津大学 | 激光晶体等离子体改性刻蚀辅助抛光加工方法 |
CN110730905A (zh) * | 2017-06-13 | 2020-01-24 | 株式会社电装 | 半导体装置及其制造方法 |
Families Citing this family (373)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4579637B2 (ja) | 2004-10-01 | 2010-11-10 | 東京エレクトロン株式会社 | 半導体記憶装置及びその製造方法 |
JP2006310736A (ja) * | 2005-03-30 | 2006-11-09 | Tokyo Electron Ltd | ゲート絶縁膜の製造方法および半導体装置の製造方法 |
KR100790779B1 (ko) * | 2006-06-09 | 2008-01-02 | 주식회사 아이피에스 | 갭 필 능력을 향상시킨 절연막 증착 방법 |
KR100796742B1 (ko) * | 2006-08-02 | 2008-01-22 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
US8986456B2 (en) | 2006-10-10 | 2015-03-24 | Asm America, Inc. | Precursor delivery system |
JP2008192975A (ja) * | 2007-02-07 | 2008-08-21 | Hitachi Kokusai Electric Inc | 基板処理方法 |
JP2010171359A (ja) * | 2008-04-07 | 2010-08-05 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
JP5421551B2 (ja) * | 2008-06-11 | 2014-02-19 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8802201B2 (en) * | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US8877655B2 (en) | 2010-05-07 | 2014-11-04 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US8883270B2 (en) | 2009-08-14 | 2014-11-11 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US9793148B2 (en) | 2011-06-22 | 2017-10-17 | Asm Japan K.K. | Method for positioning wafers in multiple wafer transport |
US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US9096931B2 (en) | 2011-10-27 | 2015-08-04 | Asm America, Inc | Deposition valve assembly and method of heating the same |
US9341296B2 (en) | 2011-10-27 | 2016-05-17 | Asm America, Inc. | Heater jacket for a fluid line |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US9167625B2 (en) | 2011-11-23 | 2015-10-20 | Asm Ip Holding B.V. | Radiation shielding for a substrate holder |
US9005539B2 (en) | 2011-11-23 | 2015-04-14 | Asm Ip Holding B.V. | Chamber sealing member |
US9202727B2 (en) | 2012-03-02 | 2015-12-01 | ASM IP Holding | Susceptor heater shim |
US8946830B2 (en) | 2012-04-04 | 2015-02-03 | Asm Ip Holdings B.V. | Metal oxide protective layer for a semiconductor device |
TWI622664B (zh) | 2012-05-02 | 2018-05-01 | Asm智慧財產控股公司 | 相穩定薄膜,包括該薄膜之結構及裝置,及其形成方法 |
US8728832B2 (en) * | 2012-05-07 | 2014-05-20 | Asm Ip Holdings B.V. | Semiconductor device dielectric interface layer |
US8933375B2 (en) | 2012-06-27 | 2015-01-13 | Asm Ip Holding B.V. | Susceptor heater and method of heating a substrate |
US9558931B2 (en) | 2012-07-27 | 2017-01-31 | Asm Ip Holding B.V. | System and method for gas-phase sulfur passivation of a semiconductor surface |
US9117866B2 (en) | 2012-07-31 | 2015-08-25 | Asm Ip Holding B.V. | Apparatus and method for calculating a wafer position in a processing chamber under process conditions |
US9169975B2 (en) | 2012-08-28 | 2015-10-27 | Asm Ip Holding B.V. | Systems and methods for mass flow controller verification |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
US9021985B2 (en) | 2012-09-12 | 2015-05-05 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US9324811B2 (en) | 2012-09-26 | 2016-04-26 | Asm Ip Holding B.V. | Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same |
US9048190B2 (en) * | 2012-10-09 | 2015-06-02 | Applied Materials, Inc. | Methods and apparatus for processing substrates using an ion shield |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US9640416B2 (en) | 2012-12-26 | 2017-05-02 | Asm Ip Holding B.V. | Single-and dual-chamber module-attachable wafer-handling chamber |
US8894870B2 (en) | 2013-02-01 | 2014-11-25 | Asm Ip Holding B.V. | Multi-step method and apparatus for etching compounds containing a metal |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
US8993054B2 (en) | 2013-07-12 | 2015-03-31 | Asm Ip Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
US9018111B2 (en) | 2013-07-22 | 2015-04-28 | Asm Ip Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
US9396934B2 (en) | 2013-08-14 | 2016-07-19 | Asm Ip Holding B.V. | Methods of forming films including germanium tin and structures and devices including the films |
US9793115B2 (en) | 2013-08-14 | 2017-10-17 | Asm Ip Holding B.V. | Structures and devices including germanium-tin films and methods of forming same |
US9240412B2 (en) | 2013-09-27 | 2016-01-19 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
US9556516B2 (en) | 2013-10-09 | 2017-01-31 | ASM IP Holding B.V | Method for forming Ti-containing film by PEALD using TDMAT or TDEAT |
JP6134727B2 (ja) * | 2013-11-08 | 2017-05-24 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US9605343B2 (en) | 2013-11-13 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming conformal carbon films, structures conformal carbon film, and system of forming same |
US10179947B2 (en) | 2013-11-26 | 2019-01-15 | Asm Ip Holding B.V. | Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US9447498B2 (en) | 2014-03-18 | 2016-09-20 | Asm Ip Holding B.V. | Method for performing uniform processing in gas system-sharing multiple reaction chambers |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US9404587B2 (en) | 2014-04-24 | 2016-08-02 | ASM IP Holding B.V | Lockout tagout for semiconductor vacuum valve |
JP6225837B2 (ja) | 2014-06-04 | 2017-11-08 | 東京エレクトロン株式会社 | 成膜装置、成膜方法、記憶媒体 |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9543180B2 (en) | 2014-08-01 | 2017-01-10 | Asm Ip Holding B.V. | Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
KR102300403B1 (ko) | 2014-11-19 | 2021-09-09 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
JP6354539B2 (ja) * | 2014-11-25 | 2018-07-11 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法、記憶媒体 |
KR102263121B1 (ko) | 2014-12-22 | 2021-06-09 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 및 그 제조 방법 |
US9478415B2 (en) | 2015-02-13 | 2016-10-25 | Asm Ip Holding B.V. | Method for forming film having low resistance and shallow junction depth |
US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US10043661B2 (en) | 2015-07-13 | 2018-08-07 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US9899291B2 (en) | 2015-07-13 | 2018-02-20 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US10083836B2 (en) | 2015-07-24 | 2018-09-25 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
US10087525B2 (en) | 2015-08-04 | 2018-10-02 | Asm Ip Holding B.V. | Variable gap hard stop design |
US9647114B2 (en) | 2015-08-14 | 2017-05-09 | Asm Ip Holding B.V. | Methods of forming highly p-type doped germanium tin films and structures and devices including the films |
US9711345B2 (en) | 2015-08-25 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming aluminum nitride-based film by PEALD |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US9909214B2 (en) | 2015-10-15 | 2018-03-06 | Asm Ip Holding B.V. | Method for depositing dielectric film in trenches by PEALD |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US9455138B1 (en) | 2015-11-10 | 2016-09-27 | Asm Ip Holding B.V. | Method for forming dielectric film in trenches by PEALD using H-containing gas |
US9905420B2 (en) | 2015-12-01 | 2018-02-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium tin films and structures and devices including the films |
US9607837B1 (en) | 2015-12-21 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming silicon oxide cap layer for solid state diffusion process |
US9627221B1 (en) | 2015-12-28 | 2017-04-18 | Asm Ip Holding B.V. | Continuous process incorporating atomic layer etching |
US9735024B2 (en) | 2015-12-28 | 2017-08-15 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US9754779B1 (en) | 2016-02-19 | 2017-09-05 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US9892913B2 (en) | 2016-03-24 | 2018-02-13 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10087522B2 (en) | 2016-04-21 | 2018-10-02 | Asm Ip Holding B.V. | Deposition of metal borides |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
KR102592471B1 (ko) | 2016-05-17 | 2023-10-20 | 에이에스엠 아이피 홀딩 비.브이. | 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법 |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US9793135B1 (en) | 2016-07-14 | 2017-10-17 | ASM IP Holding B.V | Method of cyclic dry etching using etchant film |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
US10381226B2 (en) | 2016-07-27 | 2019-08-13 | Asm Ip Holding B.V. | Method of processing substrate |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US10177025B2 (en) | 2016-07-28 | 2019-01-08 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10090316B2 (en) | 2016-09-01 | 2018-10-02 | Asm Ip Holding B.V. | 3D stacked multilayer semiconductor memory using doped select transistor channel |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US9916980B1 (en) | 2016-12-15 | 2018-03-13 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
KR102700194B1 (ko) | 2016-12-19 | 2024-08-28 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10103040B1 (en) | 2017-03-31 | 2018-10-16 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
USD830981S1 (en) | 2017-04-07 | 2018-10-16 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate processing apparatus |
KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US12040200B2 (en) | 2017-06-20 | 2024-07-16 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10236177B1 (en) | 2017-08-22 | 2019-03-19 | ASM IP Holding B.V.. | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
KR102401446B1 (ko) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
KR102443047B1 (ko) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 방법 및 그에 의해 제조된 장치 |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
WO2019103613A1 (en) | 2017-11-27 | 2019-05-31 | Asm Ip Holding B.V. | A storage device for storing wafer cassettes for use with a batch furnace |
JP7206265B2 (ja) | 2017-11-27 | 2023-01-17 | エーエスエム アイピー ホールディング ビー.ブイ. | クリーン・ミニエンバイロメントを備える装置 |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
TWI799494B (zh) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
KR102695659B1 (ko) | 2018-01-19 | 2024-08-14 | 에이에스엠 아이피 홀딩 비.브이. | 플라즈마 보조 증착에 의해 갭 충진 층을 증착하는 방법 |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
WO2019158960A1 (en) | 2018-02-14 | 2019-08-22 | Asm Ip Holding B.V. | A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
TWI843623B (zh) | 2018-05-08 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構 |
TW202349473A (zh) | 2018-05-11 | 2023-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
TWI840362B (zh) | 2018-06-04 | 2024-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 水氣降低的晶圓處置腔室 |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
TW202409324A (zh) | 2018-06-27 | 2024-03-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於形成含金屬材料之循環沉積製程 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
KR102686758B1 (ko) | 2018-06-29 | 2024-07-18 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
TWI728456B (zh) | 2018-09-11 | 2021-05-21 | 荷蘭商Asm Ip私人控股有限公司 | 相對於基板的薄膜沉積方法 |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP7504584B2 (ja) | 2018-12-14 | 2024-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム |
TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
TW202044325A (zh) | 2019-02-20 | 2020-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
TWI838458B (zh) | 2019-02-20 | 2024-04-11 | 荷蘭商Asm Ip私人控股有限公司 | 用於3d nand應用中之插塞填充沉積之設備及方法 |
TWI845607B (zh) | 2019-02-20 | 2024-06-21 | 荷蘭商Asm Ip私人控股有限公司 | 用來填充形成於基材表面內之凹部的循環沉積方法及設備 |
TWI842826B (zh) | 2019-02-22 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備及處理基材之方法 |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
KR20200116033A (ko) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | 도어 개방기 및 이를 구비한 기판 처리 장치 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
KR20200123380A (ko) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | 층 형성 방법 및 장치 |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
JP2020188254A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
TWI839544B (zh) | 2019-07-19 | 2024-04-21 | 荷蘭商Asm Ip私人控股有限公司 | 形成形貌受控的非晶碳聚合物膜之方法 |
CN112309843A (zh) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | 实现高掺杂剂掺入的选择性沉积方法 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
CN118422165A (zh) | 2019-08-05 | 2024-08-02 | Asm Ip私人控股有限公司 | 用于化学源容器的液位传感器 |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
KR20210042810A (ko) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
CN112635282A (zh) | 2019-10-08 | 2021-04-09 | Asm Ip私人控股有限公司 | 具有连接板的基板处理装置、基板处理方法 |
KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP7527928B2 (ja) | 2019-12-02 | 2024-08-05 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
TW202125596A (zh) | 2019-12-17 | 2021-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成氮化釩層之方法以及包括該氮化釩層之結構 |
KR20210080214A (ko) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
TW202140135A (zh) | 2020-01-06 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 氣體供應總成以及閥板總成 |
JP2021111783A (ja) | 2020-01-06 | 2021-08-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | チャネル付きリフトピン |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
KR102675856B1 (ko) | 2020-01-20 | 2024-06-17 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
TW202146882A (zh) | 2020-02-04 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | 專用於零件清潔的系統 |
KR20210116249A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법 |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
CN113394086A (zh) | 2020-03-12 | 2021-09-14 | Asm Ip私人控股有限公司 | 用于制造具有目标拓扑轮廓的层结构的方法 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
KR20210128343A (ko) | 2020-04-15 | 2021-10-26 | 에이에스엠 아이피 홀딩 비.브이. | 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
TW202146831A (zh) | 2020-04-24 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法 |
KR20210132576A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 나이트라이드 함유 층을 형성하는 방법 및 이를 포함하는 구조 |
KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
JP2021177545A (ja) | 2020-05-04 | 2021-11-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板を処理するための基板処理システム |
KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
TW202146699A (zh) | 2020-05-15 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統 |
TW202147383A (zh) | 2020-05-19 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備 |
KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
TW202200837A (zh) | 2020-05-22 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基材上形成薄膜之反應系統 |
TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202202649A (zh) | 2020-07-08 | 2022-01-16 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
KR20220010438A (ko) | 2020-07-17 | 2022-01-25 | 에이에스엠 아이피 홀딩 비.브이. | 포토리소그래피에 사용하기 위한 구조체 및 방법 |
TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
US12040177B2 (en) | 2020-08-18 | 2024-07-16 | Asm Ip Holding B.V. | Methods for forming a laminate film by cyclical plasma-enhanced deposition processes |
KR20220027026A (ko) | 2020-08-26 | 2022-03-07 | 에이에스엠 아이피 홀딩 비.브이. | 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템 |
TW202229601A (zh) | 2020-08-27 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成圖案化結構的方法、操控機械特性的方法、裝置結構、及基板處理系統 |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
CN114293174A (zh) | 2020-10-07 | 2022-04-08 | Asm Ip私人控股有限公司 | 气体供应单元和包括气体供应单元的衬底处理设备 |
TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
TW202217037A (zh) | 2020-10-22 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 沉積釩金屬的方法、結構、裝置及沉積總成 |
TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
TW202235649A (zh) | 2020-11-24 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | 填充間隙之方法與相關之系統及裝置 |
KR20220076343A (ko) | 2020-11-30 | 2022-06-08 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터 |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0661732B1 (en) * | 1993-12-28 | 2004-06-09 | Applied Materials, Inc. | A method of forming silicon oxy-nitride films by plasma-enhanced chemical vapor deposition |
US6245616B1 (en) * | 1999-01-06 | 2001-06-12 | International Business Machines Corporation | Method of forming oxynitride gate dielectric |
US20010052323A1 (en) * | 1999-02-17 | 2001-12-20 | Ellie Yieh | Method and apparatus for forming material layers from atomic gasses |
KR100745495B1 (ko) * | 1999-03-10 | 2007-08-03 | 동경 엘렉트론 주식회사 | 반도체 제조방법 및 반도체 제조장치 |
JP4255563B2 (ja) * | 1999-04-05 | 2009-04-15 | 東京エレクトロン株式会社 | 半導体製造方法及び半導体製造装置 |
US6218314B1 (en) * | 1999-04-01 | 2001-04-17 | Taiwan Semiconductor Manufacturing Company | Silicon dioxide-oxynitride continuity film as a passivation film |
JP3399413B2 (ja) * | 1999-09-13 | 2003-04-21 | 日本電気株式会社 | 酸窒化膜およびその形成方法 |
JP2001085511A (ja) * | 1999-09-14 | 2001-03-30 | Toshiba Corp | 素子分離方法 |
US6348420B1 (en) * | 1999-12-23 | 2002-02-19 | Asm America, Inc. | Situ dielectric stacks |
EP1266054B1 (en) * | 2000-03-07 | 2006-12-20 | Asm International N.V. | Graded thin films |
KR20010087598A (ko) * | 2000-03-08 | 2001-09-21 | 황 철 주 | Hdp-cvd 장치 및 이를 이용한 갭 필링 방법 |
EP1265276B1 (en) * | 2000-03-13 | 2011-06-22 | Tadahiro Ohmi | Method for forming dielectric film |
JP2001332724A (ja) * | 2000-05-25 | 2001-11-30 | Fujitsu Ltd | 絶縁ゲート型半導体装置及びその製造方法 |
JP2002170825A (ja) * | 2000-11-30 | 2002-06-14 | Nec Corp | 半導体装置及びmis型半導体装置並びにその製造方法 |
JP5068402B2 (ja) * | 2000-12-28 | 2012-11-07 | 公益財団法人国際科学振興財団 | 誘電体膜およびその形成方法、半導体装置、不揮発性半導体メモリ装置、および半導体装置の製造方法 |
JP4713752B2 (ja) | 2000-12-28 | 2011-06-29 | 財団法人国際科学振興財団 | 半導体装置およびその製造方法 |
JP3916565B2 (ja) * | 2001-01-22 | 2007-05-16 | 東京エレクトロン株式会社 | 電子デバイス材料の製造方法 |
US6498383B2 (en) * | 2001-05-23 | 2002-12-24 | International Business Machines Corporation | Oxynitride shallow trench isolation and method of formation |
US7250375B2 (en) * | 2001-08-02 | 2007-07-31 | Tokyo Electron Limited | Substrate processing method and material for electronic device |
US6960537B2 (en) * | 2001-10-02 | 2005-11-01 | Asm America, Inc. | Incorporation of nitrogen into high k dielectric film |
US7018879B2 (en) * | 2002-03-20 | 2006-03-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of making an ultrathin silicon dioxide gate with improved dielectric properties using NH3 nitridation and post-deposition rapid thermal annealing |
JP2004047948A (ja) | 2002-03-26 | 2004-02-12 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び半導体製造装置 |
KR20030077436A (ko) | 2002-03-26 | 2003-10-01 | 가부시키가이샤 히다치 고쿠사이 덴키 | 반도체 장치의 제조 방법 및 반도체 제조 장치 |
JP3594947B2 (ja) * | 2002-09-19 | 2004-12-02 | 東京エレクトロン株式会社 | 絶縁膜の形成方法、半導体装置の製造方法、基板処理装置 |
CN1757098B (zh) * | 2003-02-04 | 2010-08-11 | 应用材料有限公司 | 利用具有氨的超低压快速热退火调节氧氮化硅的氮分布曲线 |
-
2004
- 2004-02-05 WO PCT/JP2004/001180 patent/WO2004070816A1/ja active Application Filing
- 2004-02-05 KR KR1020057014320A patent/KR100800639B1/ko not_active IP Right Cessation
- 2004-02-05 JP JP2005504874A patent/JP4402044B2/ja not_active Expired - Fee Related
- 2004-02-05 CN CNB2004800036633A patent/CN100429753C/zh not_active Expired - Fee Related
- 2004-02-06 TW TW093102770A patent/TW200423825A/zh not_active IP Right Cessation
-
2005
- 2005-08-05 US US11/197,554 patent/US7807234B2/en not_active Expired - Fee Related
-
2010
- 2010-07-15 US US12/836,875 patent/US20100275846A1/en not_active Abandoned
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101405846B (zh) * | 2006-08-28 | 2010-09-29 | 国立大学法人名古屋大学 | 等离子体氧化处理方法及装置 |
CN110730905A (zh) * | 2017-06-13 | 2020-01-24 | 株式会社电装 | 半导体装置及其制造方法 |
CN108166066A (zh) * | 2017-12-25 | 2018-06-15 | 天津大学 | 激光晶体等离子体改性刻蚀辅助抛光加工方法 |
Also Published As
Publication number | Publication date |
---|---|
US7807234B2 (en) | 2010-10-05 |
TW200423825A (en) | 2004-11-01 |
TWI319694B (zh) | 2010-01-11 |
KR20050094477A (ko) | 2005-09-27 |
US20050287725A1 (en) | 2005-12-29 |
KR100800639B1 (ko) | 2008-02-01 |
CN100429753C (zh) | 2008-10-29 |
US20100275846A1 (en) | 2010-11-04 |
JPWO2004070816A1 (ja) | 2006-05-25 |
JP4402044B2 (ja) | 2010-01-20 |
WO2004070816A1 (ja) | 2004-08-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1748296A (zh) | 等离子体处理方法、半导体基板以及等离子体处理装置 | |
JP4047075B2 (ja) | 半導体装置 | |
KR100746120B1 (ko) | 반도체 디바이스의 제조 방법, 플라즈마 처리 방법, 및게이트 절연막 형성 방법 | |
JP4334225B2 (ja) | 電子デバイス材料の製造方法 | |
JP4895803B2 (ja) | 誘電体膜及びゲートスタックの形成方法並びに誘電体膜の処理方法 | |
US7820558B2 (en) | Semiconductor device and method of producing the semiconductor device | |
US20040121538A1 (en) | Flash memory device and a fabrication process thereof, method of forming a dielectric film | |
CN1768431A (zh) | 半导体器件及其制造方法 | |
US20040245584A1 (en) | Forming method and forming system for insulation film | |
CN1714430A (zh) | 等离子体处理装置和等离子体处理方法 | |
EP1492161A1 (en) | Method for forming underlying insulation film | |
CN1926670A (zh) | 等离子体处理方法和计算机存储介质 | |
CN1790639A (zh) | 制造半导体结构的方法 | |
US7507644B2 (en) | Method of forming dielectric layer of flash memory device | |
CN1757101A (zh) | 基板处理方法 | |
US6350707B1 (en) | Method of fabricating capacitor dielectric | |
US6964930B2 (en) | Method of fabricating dielectric layer | |
JPH09223752A (ja) | 不揮発性半導体記憶装置の製造方法 | |
KR101050457B1 (ko) | 반도체장치의 고전압게이트절연막 형성 방법 | |
US20080203499A1 (en) | Semiconductor device having gate insulator including high-dielectric-constant materials and manufacture method of the same | |
JP2001168325A (ja) | 半導体装置、それの製造方法及び製造装置 | |
JP4213250B2 (ja) | 半導体素子の製造方法 | |
US8748260B2 (en) | Method for manufacturing nano-crystalline silicon material for semiconductor integrated circuits | |
KR100842953B1 (ko) | 반도체 소자의 커패시터 제조방법 | |
JP3422960B2 (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081029 Termination date: 20150205 |
|
EXPY | Termination of patent right or utility model |