TW200423825A - Plasma processing method, semiconductor substrate, and plasma processing device - Google Patents

Plasma processing method, semiconductor substrate, and plasma processing device Download PDF

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TW200423825A
TW200423825A TW093102770A TW93102770A TW200423825A TW 200423825 A TW200423825 A TW 200423825A TW 093102770 A TW093102770 A TW 093102770A TW 93102770 A TW93102770 A TW 93102770A TW 200423825 A TW200423825 A TW 200423825A
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insulating film
plasma
nitrogen
semiconductor substrate
gas
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TW093102770A
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TWI319694B (zh
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Junichi Kitagawa
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Tokyo Electron Ltd
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    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
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    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation
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    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
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    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
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Description

200423825 玖、發明說明： 【發明所屬之技術領域】 本發明係關於-種使用電聚以在半導體基板表面形成絕 緣膜之電漿處理方法和根據此方法所製造之半導體基板， 以及用以實施電漿處理方法之電漿處理裝置。 【先前技術】 > =彺，形成於矽基板上之絕緣膜通常採用於1〇〇〇。〇以上 南溫下進行氧化處理而形成之熱氧化膜。最近，隨著微觀 技術，發展’也需要減小僅藉由熱能進行梦與氧之反應之 此種氧化膜（絕緣膜）之厚度。 、但是’如果採用於高溫下熱氧化處理之絕緣膜之形成方 法則Ik著厚度變薄，因漏電流等增加而難以得到高可靠 性之絕緣膜。另外，對於電流流過絕緣膜來進行讀寫之非 揮發性記憶體，由於絕緣财捕獲之電洞或者電子，會有 引起忑隐體特性劣化的問題。特別地，認為電洞捕獲對產 品可靠性產生影響。 為解決此問題，由使用與熱氧化法反應機制不同之電漿 =活性原子狀氧（以下叫做氧基）進行氧化處理變成了現 實如果根據此方法，則可於將電聚之電子溫度保持低溫 之狀心下^/成氧化膜。結果’有可能減輕被處理基板和處 理裝置内壁之損壞。另外，由於電洞捕獲之減少，能夠形 成厚度很薄之氧化膜而不損失可靠性。 抓用電水之氧化膜形成方法，有記載於日本國特許公開 A報之特開平11 - 29347G號公報中。根據此方法，將含有
〇：\88\88934.DOC 200423825 石夕之氣體和含有氧之氣體導入到處理室内，生成這些氣體 之電漿，於將矽氧化膜沉積於基板上而成膜之矽氧化膜成 膜方法中，於處理室内導入上述含有矽之氣體和含有氧之 氣體之外的氫氣體，然後於處理室内生成含有氫之電聚。 因此，一般認爲能夠獲得與熱氧化膜匹配良好之薄膜物質。 但是考慮到，與根據高溫氧化處理之氧化膜相比較，使 用電漿於基板表面上形成之氧化膜（絕緣膜），其電子捕獲之 特性不良，因此抵抗電應力方面較弱，作爲產品之特性劣 化。 另一方面，為了改良熱氧化膜之各種特性之目的，有時 於熱氧化之後進行熱氮化。氮化係考慮到，由於其補償於 …、氧化時發生之不完全之Si0化合，所以可改良各種特性。 但是，於熱氮化法中，氮之深度方向分佈偏向基板介面部， 作爲相同之氧化膜之改良，仍然不充分。因此，爲了改進 抵抗電應力較弱之電毁氧化膜之特性，探討與熱氧化-氮化 膜相同之於電漿氧化處理後進行氮化處理之方法。 【發明内容】 本發明係#於上述狀況而作出，目的係提供—種形成電 2丨生良好之絕緣膜（矽氧氮化膜）之方法和根據該方法所製 造的半導體基板，以及電漿處理裝置。 二了貫現上述目的，於本發明第一態樣之電漿處理方法 同時對+導體基板表面進行電毅氧化處理和f漿氣化 處理。μμ 大 所形成之絕緣膜之捕獲特性被改良。進而， 同夺進仃氧化和氮化，係指至少穩定地進行各種處理之主
O:\88\88934.DOC 处理期間爲相同時期 同。 各種處理之開始和結束時間可以不 :理想的係電漿之電子密度爲10x /皿度爲1.0(eV)以下。另冰布 Η上電子 係可能容易生点且士…’ ％漿源為利用微波之電漿源， 八有該等值之電子密度、電子溫声之堂 :而且利用微波之電漿，能夠形 適合用㈣成本發明之氧氮切。 U域’ 料漿氧氮化處理形成絕緣膜之後，可對該絕緣 貫施電漿―。㈣，熱氮化、熱氧氮化處 中才工制困難的氬之、、婆# 虱之冰度方向之分佈控制變爲可能。另 外’於氧化·氮化之同時處理中，也可根據氧氣體混合比之 控制，實現氮分佈控制。 如果改變氧和氮氣體之混合比，即流量㈣，那麼使絕 緣膜中之氮濃度峰值變化係可能的。從而於此情況下，沒 有必要如上述於絕緣膜形成之後實施電漿氮化處理。根據 發明者之見解，如果將氧和氮氣體之流量比率設定爲 1 : 4〜1 : 6-’則如後述那樣，能夠於與基本之介面側以及絕 緣膜表面側上分別形成氮之濃度峰值。 本發明第二態樣之半導體基板，氮於從絕緣膜表面到達 與矽基板之介面之厚度方向上擴散，比絕緣膜之表面更接 近於介面之位置上具有氮分佈之峰值。或者，於絕緣膜之 表面鄰域和介面鄰域之兩處具有氮分佈之峰值。因此，獲 得半導體基板成爲可能，其中此半導體基板具有由電漿形 成的絕緣膜之捕獲特性被改良之絕緣膜。於具有此構造之
O:\88\88934.DOC 200423825 半V體基板中，為防止於後續製程中的不必要之再氧化， 需要對另外植入之雜質具有屏障。因此，能夠獲得具備有 難以受到半導體製程條件之影響、穩定之絕緣膜之半導體 基板。 — 本舍明之第三態#，於對半導體基板實施電裝處理之電 漿處理裝置中，具備有容納上述半導體基板之處理容器、 將微波導入到上述處理容器之微波導入部、將處理氣體供 應、$孩處理谷器之氣體供給部，該氣體供給部，對上述處 ，容器同時期供應氧和氮，#由對上述半導體基板表面： 吩進打氧化處理和氮化處理以形成絕緣膜。 如此情況下，可構成上述氣體供給部，於上述半導體基 板之氧化-氮化處理之後，把氮供應給上述處理容器，然後 對上述絕緣膜進一步實施氮化處理。 根據此種電漿處理裝置，能夠恰當地實施上述電漿處理 方法，另外還有可能恰當地製造上述半導體基板。 【實施方式】 圖1表示於本發明中使用之電漿基板處理裝置10的概略 結構之一例。本發明中所使用之電漿處理裝置10,具有處 理容器11，其中此處理容器U具備有保持作爲被處理基板 、夕曰曰圓W之基板保持台12，處理容器11内部之氣體經過 未圖不之排氣泵，從排氣口 11A和11B被排出。而且，基板 保持台12 ’具有加熱矽晶圓w之加熱功能。 於處理容器11之裝置上邊，對應於基板保持台12上面之 石夕曰曰圓m開口冑。此開σ部，被石英和氧化铭組成之
O:\8_934.DOC 200423825 二電質板13堵塞。於介電質板13之上部（外侧）中，裝配有作 爲天線功能之槽孔板14。於槽孔板14之上部（外側）中，裝配 有由石英、氧化鋁、氮化鋁等組成之介電質板〗5。此介電 貝板1 5通常稱作緩波板或者波長收縮板。於介電質板1 $ 之上部（外側）中，裝配有冷卻板16。於冷卻板16之内部設置 冷媒机過之冷媒線路丨6a。另外，於處理容器丨丨之上端中心 處’没置導入微波之同軸導波管丨8。 _於基板保持台12之周邊上，設置由銘組成之氣體緩衝板 (Prej板）26。於氣體緩衝板26之下面設置石英蓋28。 於處理容器11之内壁，設置用於導入電漿處理中使用之 氣體的氣體喷管22。同樣地，於處理容器丨丨之内壁的内側， I成包圍整個谷器之溫度調整介質流路2 4。 隨後表示使用此電漿處理裝置1〇實施本發明之一實施 例。首先，於電漿處理裝置10之處理容器u中放置形成為 半導體基板之矽晶圓w之後，經過排氣口 11A、UB進行處 理容器11内部的空氣排氣，以將處理容器丨丨之内部設置: 特疋的處g壓力。然後，於放置石夕晶圓W之處理容器1 1中， 從氣體噴管22預先混合導入惰性氣體、氧氣和氮氣。於具 備有多個氣體喷管22之情況下，此等氣體可分別地從各個 噴管導入處理容器U。或者，可通過各種氣體之多個管道 於氣體噴管22附近被匯聚成一根，於噴管附近，邊混合該 等氣體邊導入。無論如何，只要供應此等氣體，使得其在 相同之電漿處理機會中同時存在，則並不介意按哪種方法 提供。
O:\88\88934.DOC 200423825 頻=方面’透過同軸導波管18而提供之幾十億赫兹（ghz) 導 ^，經過介電質板15、槽孔板14、介電質㈣而 :理容器U中。根據此微波’電敷被激發，從惰性 A體、虱和氮之混合氣體，生成氧基和氮基。 此時電漿電子密度，理想的係10xl012⑽瓜3)以上，電子 紅。(ev)以下。因此’能夠抑制對所形成之氧 的才貝壞。 對於此點，於例如其他高密度生成所用之電漿源，例如 CR電漿巾’基板產生電漿損壞之可能性係很高的。即， ’者對基板累積不必要之電荷，或者切斷所形成之S卜N_〇 之鏈鎖，而不能夠形成質量良好之氧氮化膜。 仉而，如果像實施例那樣’由利用微波的高密度、低電 :溫度之電漿進行處理’則由於不會累積此不必要之電 ^ ’或者不會切斷所形成之Si_N_◦的鏈鎖，而能夠形成質 量良好之氧氮化膜。 另外由於為具有此高密度、 夠對電漿接近配置矽晶圓w， 低0 低電子溫度之電漿，所以能 並且能夠抑制成膜速度之降 旦即於先前之電漿源，例如ECR電漿中，爲了具有較高* 量二而需要矽晶圓w與電漿區域比較離開地配置，但如4 ，來於所產生之氧基到達石夕晶圓w之前，此氧基壽命去 雨結束之機率就很高，因此造成成膜速度降低。 於此實施例中，因 以能夠對電漿接近配 爲藉由利用微波之電漿進行處理，所 置矽晶圓W，因此，於氧基壽命結束
O:\88\88934.DOC 200423825 之前，能夠使許多氧基到達矽晶圓禪。從而，成膜速度不 降低’可形成適當之氧化膜、氮化膜。 到達矽基板21之表面之氧基和氮基如圖2(B)所表示，氧 化氮化處理矽基板21之表面，形成所期望厚度（例如約1〇 nm)之矽氧氮化膜22。因此，獲得具有氧化和氮化同時進行 所形成之絕緣膜之半導體基板（實施例丨）。 另一方面，爲了比較，預備具有熱氧化膜之半導體基板 (先前之例子）、具有於電漿氧化之後電漿氮化的絕緣膜之半 導體基板（比較例1);和只具有電漿氧化膜之半導體基板（比 較例2)。然後，和上述實施例丨一起測定並比較評價捕獲 (TRAP)特性。於圖4(A)、（B)中表示此結果。 圖3 (A)中表示電子捕獲之結構。例如，於重寫快閃記憶 體30時，將電子從半導體基板31通過絕緣膜（氧化膜）32引入 到浮動閘33中。此時，如果絕緣膜32之薄膜質量不佳，則 大多數電子3 5停留於此絕緣膜中，逐漸地電子（一）變得不能 通過。稱此現象爲捕獲，於此例子中，重寫快閃記憶體3〇 之後’由；^該被捕獲之電子3 5，記憶體之寫入特性劣化。 捕獲特性之測定，例如圖3(B)所示，係用M〇S電容36測 定半導體基板。此MOS電容，藉由於上述所形成矽基板21 中没置絕緣膜（氧化膜）22，於此絕緣膜之上面設置爲了流通 固定電流之電極3 7而形成。藉由測定此電極3 7和半導體基 板21之間之電位差來測定捕獲特性。 在使用N — MOS電容之情況下，於電極37上施加負電 壓，測定電壓之隨時變化。一般情況下，測定之資料可大 O:\88\88934.DOC -11- 200423825 ㈣分為圖4(A)、⑻，於測定初期（圖4B)，觀測電洞和重 $根據以後之測定（圖4A)，觀測電子和重疊。施加於半 導體基板和電極之間之初期電麼值，隨著時間之流逝，、逐 漸地移動到負號側。表示出所移動之電壓值越大，則被捕 獲之電子就越多，電子通過絕緣膜就越困難。如果此係上 述之快閃記憶體，則於寫人時，捕獲越大，則電子越難以 通過，越難以寫入，結果表現為寫入特性劣化。 圖4表不由此測定之電子捕獲特性和與初期電壓值偏差 之關係。橫軸表示標準化時間，縱軸表示與初期電壓值之 偏差（Vg — shift)。此偏差係所施加之初期電壓值與隨時間 所變化的絕緣膜兩端之間的測定電壓之差。因此，表示電 子捕獲增加時，移動到負號側。 貫線表示根據先前例之熱氧化膜的半導體基板，一點鏈 線表示具有同時進行根據本發明實施例丨之電漿氧化和電 漿氮化所生成之電漿氧氮化膜（絕緣膜）的半導體基板。另 外，兩點鏈線，表示具有電漿氧化之後電漿氮化所生成之 比較例1的絕緣膜之半導體基板，點線（虛線）表示具有電漿 氧化膜之比較例2的半導體基板。從圖中理解，實施例丄具 有與先前之熱氧化膜大致相同之良好特性，相對於此，任 一比較例中，作為絕緣膜特性，電子捕獲量大多係不充分 的。 另一方面，為了比較一般電特性，對於上述試樣，分別 求出施加電荷或流過電流時到達絕緣破壞之前之隨時間變 化特性（TDDB ·· Time Dependent Dielectric Breakdown)和漏 O:\88\88934.DOC -12- 200423825 (LEAK)電流，將其表 之值作爲標準，進行相對®Γ。在此處，將熱氧化膜中 合地把握絕緣膜特性，：：:。而且，於此表中’為更综 行附加表卜 圖4心之捕獲特性也按定性表現進 根據從該結果中可知’於tddb、漏電流中之任何—個 ’由電漿所獲得之絕緣膜，相對先前之熱氧化膜表示出 相同或者超出它的特性。 、 根據本發明之實施例 ”土，—，對於漏電流，纟電漿所形成之絕緣膜， 表不勝過先前例之良好特性。另外，對於絕緣膜之壽命 (TDDB)而言，認為電洞和重疊係支配之要素，可以說電子 和重疊越少，絕緣膜越好。 接著，下面表示使用此《處理裝置1G實施本發明之另 外一例。 不從處理容HU中取出藉由該實施例1€得的半導體基 板，繼續將其放置於處理容器llt。實施例}時使用之氣體 等經過排氣日11A、11B從處理容器u中排出。之後，惰性 氣體和氮氣被預先混合後從氣體噴管22導入處理容器“ 中。 " 另一方面，透過導波管18提供之幾GHz頻率的微波，經 過介電質板15、槽孔板14、介電質板13而導入到處理容器 11中。藉此微波激發電漿，從已經導入之惰性氣體、氧和 氮之混合氣體，生成氧基和氮基。 到達半導體基板表面之氮基如圖6(B)所表示，進一步^ 化處理位於半導體基板之表面上的絕緣膜22，形成所期望 O:\88\88934.DOC -13 - 200423825 厚度（例如約10 nm)之石/ 時進行氧化和氮化之後 nm)之矽氧氮化膜22A。因此，獲得具有同 化之後，進行進一步的氮化處理之絕緣膜 A的半導體基板（實施例2 )。 對於由此獲得之根據本發明之半導體基板，於圖7中表示 °周查絕緣膜厚度方向之氮分佈狀況。於圖7中，橫軸表示蝕 刻時間。表示對應於絕緣膜之厚度方向距離，時間越長， 蝕刻得越多，越遠離絕緣膜表面，變得越深。縱軸表示氮 之相對光譜強度，表示強度越強，氮分佈並且存在得越多。 圖7表示實施例丨中之氮分佈，氮至少在從絕緣膜表面到 半導體基板之介面之厚度方向上擴散，在比表面更靠近介 面的位置上存在氮分佈之峰值。因此，能夠獲得具備有捕 獲特性良好的絕緣膜之半導體基板。 圖8表示實施例2中之氮分佈，能夠確認絕緣膜中的氮之 分佈峰值可位於表面鄰域和介面鄰域兩處。因此，除了電 漿所形成之絕緣膜的捕獲特性得到改良之外，還能防止於 以後製程中之再氧化，對所植入之雜質變為屏障。因此， 可得到具備有難以受到半導體製程條件之影響、穩定的絕· 緣膜之半導體基板。 然後’於此實施例2中，藉由热企沾洛*老你，….，
邯峄值在表面鄰域和介面鄰域兩處之絕緣膜。
O:\88\88934.DOC -14- 200423825 即，首先於處理容器η内部，將氧和惰性氣體予以電货 化」以對石夕晶圓w形成氧化膜。然後，將惰性氣體、氧氣 和氮氣之混合氣體導入處理容器u内部，電聚對 矽晶圓w進行氧氮化處理， 交 之絕緣膜的情況下，氧化膜之^㈣如於形成81- 胰之与度爲6 ，氮化膜之厚度 '”、二。此時’氧氣和氮氣之混合氣體之流量消耗 1 · 4〜1 ·· 6左右。 n 藉:，可能形成絕緣膜中氮之分佈峰值在表面鄰域和介 面鄰域兩處之絕緣膜。 二以：：明，根據本發明’由於同時進行對半導 表面之電漿氧化處理和電漿氮 化處使所形成絕緣膜之 捕獲特性仔到改良。另外，蕤 择n本二“ 糟由TDDB、漏電流觀察，能夠 獲侍比先别更佳之絕緣膜。 ，一步’於該電漿氧化-氮化處理之後，進行進—步的氮 处理之匱况下’有可能控制藉由高溫氧氮化處理難於柝 Γ之氮深度方向分佈。因此，可對應用途獲得適當特性2 氧氮化膜。 如以上之情況那樣，根據本發明，不管是否於低温下形― 成絶緣膜，都能夠獲得具有匹配於或者高於熱氧化膜之電 特性和可靠性之半導體基板。 (產業上之可利用性） 本發明適用於半導體裝置，特別係非揮發性記憶體 緣膜之形成。 【圖式簡單說明】
O:\88\88934.DOC -15- 200423825 圖1係表示本發明實施例之電漿處理裝置結構之一例之 概略圖（截面圖）。 圖2(A)、（B)係表示實施例1之電漿處理步驟之一部分之 概略圖。 圖3(A)係說明捕獲特性之圖，（B)係表示測定作爲一例二 捕獲特性的概略圖。 =4(A)、（B)係表示各種絕緣膜捕獲特性之曲線圖。 回係表不直到絕緣破壞時的隨時變化特性之圖表。 概Γ圖⑷、（B)係表示實施例2之電漿處理步驟之一部分《 圖圖7係表示根據本發明實施例1之絕緣膜中之氮分佈曲， 圖 圖8係表示根據本發 明貫施例2之絕 緣膜中之氮分佈曲線 【圖式代表符號說明】 10 電槳處理裝置 11 電槳處理容器 12 基板保持台 21 碎基板 22 矽氧化膜
O:\88\88934.DOC -16 -

Claims (1)

  1. 200423825 拾、申請專利範園·· 1. 一種電漿處理方法，其係採用μ 基板進行處理者； 里谷斋内之半導體 其具有對上述半導體基板之 氮化處理之絕緣膜形成步驟。〜進行氧化處理和 2·如申請專利範圍第i項之電襞處理方法 絕緣膜形成步驟之後，對該絕緣膜進—：實;=述 的步驟。 進步貫轭氮化處理 3. 一種電漿處理方法’其係採用 ^ A , 电水對處理谷态内之半導 體基板形成絕緣膜者，其具有·· 蜍 氣體提供步驟，於相同虛 氧氣和氮氣，·及彳门處理時期提供至少惰性氣體、 聚電漿激發步驟，根據該所提供之氣體和微波以激發電 4·如申請專利範圍第3項之電衆處理方法，其中具有： 氣體提供步驟’於上述電漿激發步驟之後，進而於相 同處理時-期提供至少惰性氣體和氮氣；及 電渡激發步驟，根據該被提供之氣體和微波以激發電 漿0 5.如申請專利範圍第3項之電漿處理方法，其中上述電聚之 電子密度係i.OxH^d—3)以上，上述電聚之電子溫度係 1 ·〇 (eV)以下。 6·如申請專利範圍第3項之電漿處理方法，其中改變氧氣和 氮氣之流ϊ比率，使絕緣膜中之氮濃度峰值發生變化。 O:\88\88934.DOC 200423825 7·如申請專利範圍第6項 、之電展處理方法，盆中_ 友 之流量比率係1 ·· 4〜〗· r ，、中虱虱和虱氣 丄· 6 〇 8· -種半導體基板，其係於半導體設備中使用者，. 絕緣膑，根據於相同處理時期提供至少情性氣體' % 氣和氮氣之氣體提佴牛聰 生乱體'虱 波以激#雷將 、乂1"，及根據該所提供之氣體和微 波激&電漿之«激發步驟所形成。 9·如申請專利範圍第8項之主道触甘α 、+¥體基板，其中氧氣和氮氣之 流罝比率係1 : 4〜1 : 6。 10· —種半導體基板，复呈 有矽基板和於該矽基板之表面上 所形成之絕緣膜；且 於從上述絕緣膜表面到達與石夕基板之介面的厚度方向 上擴散氮； 於比上述絕緣膜之表面更接近上述介面處具有氮分佈 之峰值。 11. 一種半導體基板，其包切基板和於财基板之表面上 所形成之絕緣膜；且 於從上述絕緣膜表面到達與矽基板之介面的厚度方向 上擴散氮； 於上述絕緣膜之表面鄰域和上述介面鄰域兩處具有氮 分佈之峰值。 12· —種電漿處理裝置，其係對半導體基板實施電漿處理 者，其包含有： 處理容器，其容納上述半導體基板； 微波導入部，其將微波導入到上述處理容器；及 O:\88\88934.DOC -2 - 200423825 氣體供給部，其將處理氣體供應給上述處理容器；且 上述氣體供給部，對上述處理容器同時供應氧和氮； 根據對上述半導體基板表面同時進行氧化處理和氮化 處理以形成絕緣膜。 13. 如申請專利範圍第12項之電漿處理方法，其中上述氣體 t給部，於上述半導體基板之氧化_氮化處理之後，將氮 供應給上述處理容器，然後對上述絕緣膜實施氮化處理。 O:\88\88934.DOC
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