CN1701428A - 内部增强的焊盘 - Google Patents

内部增强的焊盘 Download PDF

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CN1701428A
CN1701428A CNA2004800008991A CN200480000899A CN1701428A CN 1701428 A CN1701428 A CN 1701428A CN A2004800008991 A CNA2004800008991 A CN A2004800008991A CN 200480000899 A CN200480000899 A CN 200480000899A CN 1701428 A CN1701428 A CN 1701428A
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nonplanar
dielectric
layer
metallic
metal level
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CN100373569C (zh
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戴维·安格尔
弗雷德里克·保利奥
久田隆史
阿德利尼·凯利
萨缪尔·迈克奈特
宫井宏光
凯文·沙恩·皮特拉尔卡
沃尔夫冈·萨乌特
理查德·鲍尔·沃兰特
凯特林·温斯坦
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International Business Machines Corp
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Abstract

本申请涉及内部增强的焊盘。具体公开了一种加强焊盘结构，其具有非平面电介质结构以及共形地形成在所述非平面电介质结构上的金属接合层。所述非平面电介质结构基本上被再现在所述金属接合层中，以形成非平面金属结构。环绕每一个非平面金属结构有一个电介质材料环，在探查焊盘期间提供硬停止体，以限制焊盘在探查期间可被去除的量。

Description

内部增强的焊盘
技术领域
本发明总体上涉及集成电路，尤其是涉及具有机械性能坚固的焊盘的集成电路。
背景技术
集成电路是使用许多不同的形成电路元件的加工操作而形成在半导体衬底上的。为了访问与半导体衬底相联的电路，在集成电路上形成有焊盘。焊盘提供了通过探头、焊线、导电凸起等向半导体衬底来往传输电信号和电源的手段。
焊盘一般是由铝形成的，因为铝能够自钝化，因此更能抵抗由于大气压而导致的退化。对于集成电路内的金属层，使用的是铝，最近还使用了铜。铜更好，这是因为其与铝相比，有更好的电迁移性能和支持更高电流密度的能力。
为了实现铝的自钝化特性和铜的更优电学特性的优势，在集成电路设计中可以使用复合焊盘结构。在复合焊盘结构中，对于与集成电路中的其它层相接的焊盘的下伏层，使用铜。在铜部分的顶部形成一个抗腐蚀的铝盖层，形成保护铜部分不受暴露于大气的影响的气密封。为了从物理上将复合焊盘的铜部分和铝部分分开，同时允许电连接，可以在界面上形成相对较薄的势垒金属层。
当执行测试和探查操作时，复合焊盘结构中可能出现问题。为了用焊盘实现良好的电连续性，诸如探头等元件必须施加力，这种力可能破坏或者移动部分焊盘表面。另外，如果探头使得下伏的铜暴露于环境中，则会发生铜的退化。
焊盘结构可能出现的另一个问题涉及探头施加于焊盘上的物理力，基于集成电路内的物理连接关系，该力可能传递到下面的层位。在焊盘下面的低杨氏模量的电介质可能不能支持由于所述力的传递而导致的应力。
为了改善焊盘的整体性，已经提出过各种解决方案。
Pozder等人的美国专利申请US 2001/0051426在图2a中公开了一种复合焊盘，其包括铜(或者可以是铝)、电介质支持结构以及最后的铝层。该电介质支持结构可以具有如该文献图5所示的不同结构。这些支持结构提供了形成于铝层和下伏铜层之间的界面的机械屏蔽。
Ma等人的美国专利申请US 2002/0068385公开了一种锚定焊盘，其中，在电介质层上形成焊盘，其中所述电介质层具有填充了金属的通孔。填充了金属的通孔将焊盘固定到电介质层上。
Ming-Tsung等人的美国专利5,703,408公开了一种焊盘结构，其中，在一个亚层中形成条带，这些条带导致顶部的金属焊盘的不规则表面。该特定方案的目的是增加构成焊盘的各层的附着力。类似地，Mukogawa的日本专利申请JP 3-96236(其公开内容在此引为参考)公开了一种不规则亚层，使得顶层的表面不规则。
Saran等人的美国专利6,143,396、Saran的美国专利6,232,662、Zhao等人的美国专利6,198,170以及Saran等人的美国专利6,448,650，都公开了焊盘下方的各种加强方案。这样，在Saran等人的美国专利6,143,396中，用一个电介质层和一个加强结构支持金属焊盘。在Saran的美国专利6,232,662中，由层间电介质层和加强层支持金属接合层，所述加强层包括金属和用于加强的伪结构。在Zhao的美国专利6,198,170中，由一个大的通孔和几层交替的金属和电介质段支持焊盘。最后，在Saran等人的美国专利6,448,650中，由第一电介质、层间电介质和包括交替的电介质和金属的加强层支持金属焊盘。
仍然需要改进的焊盘，能够承受探查和封装所施加的力，保护下伏的金属层(最好是铜)。
发明内容
因此，本发明的一个目的是提供一种改进的焊盘，其在机械上足够坚固以承受探查和封装产生的力。
本发明的另一个目的是提供一种改进的焊盘，其能够承受探查和封装，并能保护下伏的金属层。
结合附图阅读下面的说明可以更加清楚本发明的上述目的以及其它目的。
根据本发明的第一方面，本发明的上述目的是通过一种加强焊盘结构实现的，其包括：衬底；形成在衬底上的金属层；在该金属层上的电介质层，至少一个到该金属层的通孔以及至少一部分所述电介质层包括多个非平面电介质结构；共形地形成在电介质层的非平面结构上的金属接合层，使得所述非平面电介质结构被基本上再现在金属接合层中，作为非平面金属结构，金属接合层还形成在通孔中以接触金属层；以及环绕每一个非平面金属结构的电介质材料环。
根据本发明的第二方面，提供了一种形成内部加强焊盘的方法，该方法包括下列步骤：在衬底上形成一个金属层；在该金属层上形成第一电介质层；对第一电介质层的第一部分构图，以形成至少一个到达该金属层和多个非平面电介质结构的通孔，该第一电介质层的第二部分未被构图；在所述非平面电介质结构上和所述通孔中共形地淀积一个金属接合层，使得所述非平面电介质结构基本上被再现在所述金属接合层中，作为非平面金属结构；在所述非平面金属结构和所述第一电介质层的未构图部分上形成第二电介质层；基本上去除所述非平面金属结构的所有第二电介质层，除了环绕每一个非平面金属结构的电介质材料环之外。
附图说明
下面结合附图举例详细说明本发明的实施例。附图中：
图1是具有内部加强焊盘的半导体器件的剖视图；
图2到图5是用于形成图1所示半导体器件的优选方法；
图6是内部加强焊盘的俯视图；
图7是正被探查的内部加强焊盘的局部放大剖视图。
具体实施方式
现在参照附图进行更详细的描述。尤其见图1，其中图示了具有加强焊盘结构25的半导体器件10的剖视图。该半导体器件10包括一个衬底12，该衬底可以是半导体材料比如硅、硅锗合金等，更典型地，该衬底是已经在半导体材料上制造的前一个布线层。为了简明起见，未图示在前布线层的细节。半导体器件10还包括形成在衬底12上的金属层14以及形成在金属层14和衬底12上的电介质层16。如果需要，电介质层16可以由两个单独形成的电介质层16A、16B构成。金属材料可以是铝或者铜，但最好是铜。金属层的标称厚度一般是0.4到1.2微米。然后对电介质层16构图，形成至少一个通孔20和多个非平面电介质结构18。电介质层16的标称厚度是0.5到10微米。
然后在非平面电介质结构18上共形地形成金属接合层22，最好是铝。在非平面电介质结构18上方的金属接合层22的厚度应当为0.4到1.5微米，最好是1.2微米。由于金属接合层22是共形地形成的，非平面电介质结构18基本上会被再现在金属接合层22中，形成非平面金属结构24。“基本上再现”的意思是总体形状被再现，但并不精确。也就是，非平面电介质结构18的边(侧面)可以是竖直的，非平面金属结构24的侧面可以是倾斜的。另外，非平面电介质结构18的角部可以是尖锐的，而非平面金属结构24的角部可以是圆形的。金属接合层22还填充通孔20，以形成与金属层14的点接触。
最后，所完成的加强焊盘结构25包括一个环绕所述非平面金属结构24的电介质材料环26。已经发现，在对焊盘探查期间，除了所述非平面电介质结构18之外，该电介质材料环26也是有益的。所述电介质材料环26可以是任何电介质材料，比如氮化硅(SiNx)或者氧化硅(SiO2)，厚度约为0.1到0.2微米。在图6中图示了带有非平面金属结构24和电介质材料环26的焊盘结构25的俯视图。
在探查期间，下伏的非平面电介质结构18对焊盘结构25提供机械支持。另外，常常发生的是，在探查期间上覆的金属接合层22可能被刮掉，但是所述非平面电介质结构18和电介质材料环26防止了探头去掉所有的金属接合层22。所述非平面电介质结构18和电介质材料环26协作，提供了对探头的坚实的停止结构。见图7，在箭头42所指的方向移动的探头40已经去掉了一部分非平面金属结构24。非平面金属结构24的被去除的部分的累计总量由球44表示。从图7可以看到，电介质材料环26提供了坚实的停止结构，超过该停止结构，探头40不能去除非平面金属结构24的任何金属材料。
所述非平面电介质结构18，因而所述非平面金属结构24，可以采用任何形状，比如柱形或者条形。从顶部看，非平面金属结构24可以是环形(如图6所示)、矩形或者多边形。不管是何形状，它们的间距应当比探头的直径(或者其它横剖面尺度)更为接近，使得探头不能进入非平面电介质结构18之间从而影响剩下的金属接合层22。例如，对于18微米探头尖端，非平面电介质结构18的标称间距应当最大约17微米。另外，最好是将所述非平面电介质结构制作得尽可能小，约为0.5到1微米的宽度。所述电介质结构18的大小只受光刻和蚀刻能力的限制。另外，最好是使非平面电介质结构18间隔尽可能远，只要间隔小于探头的尺度即可。
如果金属层14是铜、金属接合层22是铝，则希望在通孔20的底部有一个势垒层27。这样的势垒层27可以例如包括Ta/TaN、TaN、Ti/TiN、W或者它们的组合。作为一种实用的方式，势垒层27会在整个焊盘结构25中存在，如图中所示。
现在看图2到图5，下面将讨论形成图1的加强焊盘结构25的方法。首先看图2，在衬底12上按照传统方法形成金属层14(最后的内部布线层)。之后，在衬底12和金属层14上按照传统方法形成电介质层16(或者单独的电介质层16A、16B)。用传统的手段对电介质层16构图，形成通孔20和非平面电介质结构18。如前所述，如果金属层14是铜，则随后要淀积在通孔20中的金属是铝，然后，理想的是在通孔20的底部淀积势垒层27。
之后，如图3所示，在电介质层16上淀积金属材料的一个覆盖层，然后对之构图，形成图3所示的结构。金属接合层22用金属材料30填充通孔20，并用金属材料28填充非平面电介质结构18之间的间隔。此时形成的还有非平面金属结构24，其基本上对应于非平面电介质结构18的形状。淀积金属接合层22的方法对于本发明来说并不重要。一般来讲，金属接合层22的厚度应当大于非平面电介质结构18的高度。例如，如果非平面电介质结构18的高度是0.85微米，则金属接合层22的厚度可以是1.2微米。
现在看图4，电介质层32按照传统方式平铺地淀积到电介质层16和金属接合层22上。部分电介质层32被掩模屏蔽34，然后对电介质层32的未被屏蔽的地方施以干法蚀刻剂，比如反应离子蚀刻(RIE)，如箭头36所示，以基本上去除金属层22上方的所有电介质层32。在RIE(或者其它合适的蚀刻步骤)之后，只有少部分电介质层32留在非平面金属结构24周围。这些剩余的少部分电介质层32就是环绕图5所示的每一个非平面金属结构26的电介质材料环26。

Claims (12)

1.一种加强焊盘结构，包括：
衬底；
形成在衬底上的金属层；
在该金属层上的电介质层，至少一个通到该金属层的通孔，至少一部分所述电介质层构成多个非平面电介质结构；
共形地形成在电介质层的非平面结构上的金属接合层，使得所述非平面电介质结构被基本上再现在金属接合层中，作为非平面金属结构，金属接合层还形成在通孔中以接触金属层；以及
环绕每一个非平面金属结构的电介质材料环。
2.如权利要求1所述的加强焊盘结构，其中所述金属层是铜。
3.如权利要求1所述的加强焊盘结构，其中所述金属接合层包括铝。
4.如权利要求1所述的加强焊盘结构，其中所述非平面金属结构包括柱或者条。
5.如权利要求1所述的加强焊盘结构，其中所述非平面电介质结构具有竖直的侧面。
6.如权利要求1所述的加强焊盘结构，其中，在所述金属层和所述金属接合层之间有一个势垒层。
7.如权利要求1所述的加强焊盘结构，其中，所述电介质材料环包括氮化硅或者氧化硅。
8.一种形成内部加强焊盘的方法，包括下列步骤：
在衬底上形成一个金属层；
在该金属层上形成第一电介质层；
对第一电介质层的第一部分构图，以形成至少一个到达该金属层的通孔和多个非平面电介质结构，该第一电介质层的第二部分未被构图；
在所述非平面电介质结构上和所述通孔中共形地淀积一个金属接合层，使得所述非平面电介质结构基本上被再现在所述金属接合层中，作为非平面金属结构；
在所述非平面金属结构和所述第一电介质层的未构图部分上形成第二电介质层；以及
基本上去除所述非平面金属结构上方的所有第二电介质层，除了环绕每一个非平面金属结构的电介质材料环之外。
9.如权利要求8所述的方法，其中，所述非平面金属结构包括柱或者条。
10.如权利要求8所述的方法，其中，所述非平面电介质结构具有竖直的侧面。
11.如权利要求8所述的方法，其中，在所述金属层和所述金属接合层之间有一个势垒层。
12.如权利要求8所述的方法，其中，所述电介质材料环包括氮化硅或者氧化硅。
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TW200503223A (en) 2005-01-16
US6864578B2 (en) 2005-03-08
ATE549741T1 (de) 2012-03-15
US20040195642A1 (en) 2004-10-07
KR20050113211A (ko) 2005-12-01
US20050121803A1 (en) 2005-06-09
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EP1609179A1 (en) 2005-12-28
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