ATE549741T1 - Innerlich verstärkte anschlussflächen - Google Patents

Innerlich verstärkte anschlussflächen

Info

Publication number
ATE549741T1
ATE549741T1 AT04723639T AT04723639T ATE549741T1 AT E549741 T1 ATE549741 T1 AT E549741T1 AT 04723639 T AT04723639 T AT 04723639T AT 04723639 T AT04723639 T AT 04723639T AT E549741 T1 ATE549741 T1 AT E549741T1
Authority
AT
Austria
Prior art keywords
nonplanar
structures
metallic
connection surface
bond pad
Prior art date
Application number
AT04723639T
Other languages
English (en)
Inventor
David Angell
Frederic Beaulieu
Takashi Hisada
Adreanne Kelly
Samuel Mcknight
Hiromitsu Miyai
Kevin Petrarca
Wolfgang Sauter
Richard Volant
Caitlin Weinstein
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE549741T1 publication Critical patent/ATE549741T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Inorganic Insulating Materials (AREA)
  • Laminated Bodies (AREA)
  • Wire Bonding (AREA)
AT04723639T 2003-04-03 2004-03-26 Innerlich verstärkte anschlussflächen ATE549741T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/249,381 US6864578B2 (en) 2003-04-03 2003-04-03 Internally reinforced bond pads
PCT/GB2004/001313 WO2004088736A1 (en) 2003-04-03 2004-03-26 Internally reinforced bond pads

Publications (1)

Publication Number Publication Date
ATE549741T1 true ATE549741T1 (de) 2012-03-15

Family

ID=33096530

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04723639T ATE549741T1 (de) 2003-04-03 2004-03-26 Innerlich verstärkte anschlussflächen

Country Status (7)

Country Link
US (2) US6864578B2 (de)
EP (1) EP1609179B1 (de)
KR (1) KR100800357B1 (de)
CN (1) CN100373569C (de)
AT (1) ATE549741T1 (de)
TW (1) TWI267966B (de)
WO (1) WO2004088736A1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007514312A (ja) * 2003-12-10 2007-05-31 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 補強された内部接続メタライゼーションを有するワイヤボンディングされた半導体部品
JP4674522B2 (ja) * 2004-11-11 2011-04-20 株式会社デンソー 半導体装置
US7952206B2 (en) * 2005-09-27 2011-05-31 Agere Systems Inc. Solder bump structure for flip chip semiconductor devices and method of manufacture therefore
US8552560B2 (en) * 2005-11-18 2013-10-08 Lsi Corporation Alternate pad structures/passivation inegration schemes to reduce or eliminate IMC cracking in post wire bonded dies during Cu/Low-K BEOL processing
KR100763709B1 (ko) * 2005-12-28 2007-10-04 동부일렉트로닉스 주식회사 반도체 소자의 패드 형성 방법
US20070287279A1 (en) * 2006-06-08 2007-12-13 Daubenspeck Timothy H Methods of forming solder connections and structure thereof
WO2008015499A1 (en) * 2006-08-01 2008-02-07 Freescale Semiconductor, Inc. Method and apparatus for improving probing of devices
WO2008015500A1 (en) * 2006-08-01 2008-02-07 Freescale Semiconductor, Inc. Method and apparatus for improvements in chip manufacture and design
DE102006052202B3 (de) * 2006-11-06 2008-02-21 Infineon Technologies Ag Halbleiterbauelement sowie Verfahren zur Herstellung eines Halbleiterbauelements
US20090079082A1 (en) * 2007-09-24 2009-03-26 Yong Liu Bonding pad structure allowing wire bonding over an active area in a semiconductor die and method of manufacturing same
US7888257B2 (en) * 2007-10-10 2011-02-15 Agere Systems Inc. Integrated circuit package including wire bonds
EP2568498A3 (de) * 2007-10-31 2013-04-24 Agere Systems Inc. Bondkontaktstellen-Haltestruktur für eine Halbleiteranordnung
JP5291917B2 (ja) 2007-11-09 2013-09-18 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR100933685B1 (ko) * 2007-12-18 2009-12-23 주식회사 하이닉스반도체 필링 방지를 위한 본딩패드 및 그 형성 방법
KR101051551B1 (ko) * 2009-10-30 2011-07-22 삼성전기주식회사 요철 패턴을 갖는 비아 패드를 포함하는 인쇄회로기판 및 그 제조방법
JP5582879B2 (ja) * 2010-06-09 2014-09-03 株式会社東芝 半導体装置及びその製造方法
JP2012124452A (ja) * 2010-12-06 2012-06-28 Samsung Electro-Mechanics Co Ltd プリント基板およびその製造方法
US8466560B2 (en) * 2010-12-30 2013-06-18 Stmicroelectronics, Inc. Dummy structures having a golden ratio and method for forming the same
US8314026B2 (en) 2011-02-17 2012-11-20 Freescale Semiconductor, Inc. Anchored conductive via and method for forming
US10217644B2 (en) 2012-07-24 2019-02-26 Infineon Technologies Ag Production of adhesion structures in dielectric layers using photoprocess technology and devices incorporating adhesion structures
US9832887B2 (en) * 2013-08-07 2017-11-28 Invensas Corporation Micro mechanical anchor for 3D architecture
CN106542492A (zh) * 2015-09-23 2017-03-29 中芯国际集成电路制造(北京)有限公司 焊盘结构、焊环结构和mems器件的封装方法
US9984987B2 (en) * 2016-08-05 2018-05-29 Nanya Technology Corporation Semiconductor structure and manufacturing method thereof
CN107887285A (zh) * 2016-09-30 2018-04-06 中芯国际集成电路制造(北京)有限公司 焊垫结构及其制造方法、及图像传感器
DE102017116574A1 (de) * 2017-07-21 2019-01-24 Infineon Technologies Ag Halbleiterbauelement
CN110223922B (zh) * 2019-06-10 2020-12-11 武汉新芯集成电路制造有限公司 一种晶圆结构及其制造方法、芯片结构

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62299052A (ja) * 1986-06-18 1987-12-26 Fujitsu Ltd 半導体装置
JP2815624B2 (ja) 1989-09-08 1998-10-27 三菱電機株式会社 半導体素子の製造方法
US5149674A (en) * 1991-06-17 1992-09-22 Motorola, Inc. Method for making a planar multi-layer metal bonding pad
US5349239A (en) * 1991-07-04 1994-09-20 Sharp Kabushiki Kaisha Vertical type construction transistor
JPH05291343A (ja) * 1992-04-10 1993-11-05 Miyagi Oki Denki Kk 半導体装置
US5248903A (en) * 1992-09-18 1993-09-28 Lsi Logic Corporation Composite bond pads for semiconductor devices
JPH08213422A (ja) * 1995-02-07 1996-08-20 Mitsubishi Electric Corp 半導体装置およびそのボンディングパッド構造
US5703408A (en) 1995-04-10 1997-12-30 United Microelectronics Corporation Bonding pad structure and method thereof
JP2940432B2 (ja) * 1995-04-27 1999-08-25 ヤマハ株式会社 半導体装置とその製造方法
US5707894A (en) * 1995-10-27 1998-01-13 United Microelectronics Corporation Bonding pad structure and method thereof
JP3457123B2 (ja) * 1995-12-07 2003-10-14 株式会社リコー 半導体装置
JP2850868B2 (ja) * 1996-08-05 1999-01-27 日本電気株式会社 半導体装置
US6143396A (en) 1997-05-01 2000-11-07 Texas Instruments Incorporated System and method for reinforcing a bond pad
KR100230428B1 (ko) * 1997-06-24 1999-11-15 윤종용 다층 도전성 패드를 구비하는 반도체장치 및 그 제조방법
TW332336B (en) * 1997-09-15 1998-05-21 Winbond Electruction Company Anti-peeling bonding pad structure
TW331662B (en) * 1997-09-15 1998-05-11 Winbond Electronics Corp Anti-peeling IC bonding pad structure
JPH11121457A (ja) * 1997-10-16 1999-04-30 Matsushita Electron Corp 半導体装置の製造方法
US6448650B1 (en) 1998-05-18 2002-09-10 Texas Instruments Incorporated Fine pitch system and method for reinforcing bond pads in semiconductor devices
US6552438B2 (en) * 1998-06-24 2003-04-22 Samsung Electronics Co. Integrated circuit bonding pads including conductive layers with arrays of unaligned spaced apart insulating islands therein and methods of forming same
US6232662B1 (en) 1998-07-14 2001-05-15 Texas Instruments Incorporated System and method for bonding over active integrated circuits
KR100284738B1 (ko) * 1998-09-04 2001-04-02 윤종용 다층금속배선을갖는반도체소자의패드및그제조방법
TW430935B (en) * 1999-03-19 2001-04-21 Ind Tech Res Inst Frame type bonding pad structure having a low parasitic capacitance
KR20010004529A (ko) 1999-06-29 2001-01-15 김영환 웨이퍼 레벨 패키지 및 그의 제조 방법
JP4021104B2 (ja) * 1999-08-05 2007-12-12 セイコーインスツル株式会社 バンプ電極を有する半導体装置
US6191023B1 (en) * 1999-11-18 2001-02-20 Taiwan Semiconductor Manufacturing Company Method of improving copper pad adhesion
US6803302B2 (en) * 1999-11-22 2004-10-12 Freescale Semiconductor, Inc. Method for forming a semiconductor device having a mechanically robust pad interface
US6198170B1 (en) 1999-12-16 2001-03-06 Conexant Systems, Inc. Bonding pad and support structure and method for their fabrication
US6306750B1 (en) 2000-01-18 2001-10-23 Taiwan Semiconductor Manufacturing Company Bonding pad structure to prevent inter-metal dielectric cracking and to improve bondability
JP4750926B2 (ja) * 2000-06-06 2011-08-17 富士通セミコンダクター株式会社 半導体装置
US6506671B1 (en) * 2000-06-08 2003-01-14 Micron Technology, Inc. Ring positionable about a periphery of a contact pad, semiconductor device components including same, and methods for positioning the ring around a contact pad
JP2002110730A (ja) * 2000-09-27 2002-04-12 Ricoh Co Ltd ボンディングパッド及び半導体装置
US20020068385A1 (en) 2000-12-01 2002-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming anchored bond pads in semiconductor devices and devices formed
FR2824954A1 (fr) * 2001-05-18 2002-11-22 St Microelectronics Sa Plot de connexion d'un circuit integre
JP4801296B2 (ja) * 2001-09-07 2011-10-26 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP3542350B2 (ja) * 2002-05-31 2004-07-14 沖電気工業株式会社 半導体装置及びその製造方法
US6756671B2 (en) * 2002-07-05 2004-06-29 Taiwan Semiconductor Manufacturing Co., Ltd Microelectronic device with a redistribution layer having a step shaped portion and method of making the same

Also Published As

Publication number Publication date
EP1609179A1 (de) 2005-12-28
US20040195642A1 (en) 2004-10-07
US6864578B2 (en) 2005-03-08
US7273804B2 (en) 2007-09-25
WO2004088736A1 (en) 2004-10-14
EP1609179B1 (de) 2012-03-14
KR100800357B1 (ko) 2008-02-04
CN100373569C (zh) 2008-03-05
TW200503223A (en) 2005-01-16
TWI267966B (en) 2006-12-01
US20050121803A1 (en) 2005-06-09
KR20050113211A (ko) 2005-12-01
CN1701428A (zh) 2005-11-23

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