CN1691345A - 固态图像传感器 - Google Patents
固态图像传感器 Download PDFInfo
- Publication number
- CN1691345A CN1691345A CNA2004100811417A CN200410081141A CN1691345A CN 1691345 A CN1691345 A CN 1691345A CN A2004100811417 A CNA2004100811417 A CN A2004100811417A CN 200410081141 A CN200410081141 A CN 200410081141A CN 1691345 A CN1691345 A CN 1691345A
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- pixel
- electrical converter
- transistor
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- image sensor
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (54)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP130806/2004 | 2004-04-27 | ||
JP2004130806A JP4230406B2 (ja) | 2004-04-27 | 2004-04-27 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1691345A true CN1691345A (zh) | 2005-11-02 |
CN100477242C CN100477242C (zh) | 2009-04-08 |
Family
ID=34930606
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100811417A Expired - Fee Related CN100477242C (zh) | 2004-04-27 | 2004-09-30 | 固态图像传感器 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7557846B2 (zh) |
EP (1) | EP1592066B1 (zh) |
JP (1) | JP4230406B2 (zh) |
KR (1) | KR100736192B1 (zh) |
CN (1) | CN100477242C (zh) |
TW (1) | TWI242882B (zh) |
Cited By (10)
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---|---|---|---|---|
CN101064787B (zh) * | 2006-04-29 | 2010-08-11 | 格科微电子(上海)有限公司 | 一种cmos图像传感器像素 |
CN101194363B (zh) * | 2005-06-02 | 2011-04-20 | 伊斯曼柯达公司 | Cmos有源像素传感器共享的放大器像素 |
CN102034838A (zh) * | 2009-09-24 | 2011-04-27 | 佳能株式会社 | 光电转换装置和使用光电转换装置的成像系统 |
CN102034837A (zh) * | 2009-09-24 | 2011-04-27 | 佳能株式会社 | 光电转换装置和使用光电转换装置的成像系统 |
CN101554045B (zh) * | 2006-12-19 | 2011-06-15 | (株)赛丽康 | 3t-4s步进重复单位单元以及包括该单位单元的3t-4s图像传感器 |
CN101452942B (zh) * | 2007-11-30 | 2011-07-06 | 索尼株式会社 | 固态成像装置和相机 |
CN101038927B (zh) * | 2006-03-10 | 2012-05-09 | 三星电子株式会社 | 具有高填充系数像素的图像传感器及形成图像传感器的方法 |
CN106653785A (zh) * | 2015-10-30 | 2017-05-10 | 瑞萨电子株式会社 | 半导体器件和其制造方法 |
CN107360738A (zh) * | 2015-04-03 | 2017-11-17 | 索尼半导体解决方案公司 | 固态成像元件、成像设备和电子器械 |
CN111354752A (zh) * | 2018-12-20 | 2020-06-30 | 三星电子株式会社 | 图像传感器 |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
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US7145122B2 (en) * | 2004-06-14 | 2006-12-05 | Omnivision Technologies, Inc. | Imaging sensor using asymmetric transfer transistor |
JP4971586B2 (ja) * | 2004-09-01 | 2012-07-11 | キヤノン株式会社 | 固体撮像装置 |
JP4595464B2 (ja) * | 2004-09-22 | 2010-12-08 | ソニー株式会社 | Cmos固体撮像素子の製造方法 |
JP2006120710A (ja) * | 2004-10-19 | 2006-05-11 | Toshiba Corp | 固体撮像装置 |
KR100690880B1 (ko) * | 2004-12-16 | 2007-03-09 | 삼성전자주식회사 | 픽셀별 광감도가 균일한 이미지 센서 및 그 제조 방법 |
WO2006097978A1 (ja) * | 2005-03-11 | 2006-09-21 | Fujitsu Limited | フォトダイオード領域を埋め込んだイメージセンサ及びその製造方法 |
JP4224036B2 (ja) * | 2005-03-17 | 2009-02-12 | 富士通マイクロエレクトロニクス株式会社 | フォトダイオード領域を埋め込んだイメージセンサ及びその製造方法 |
US7342213B2 (en) * | 2005-06-01 | 2008-03-11 | Eastman Kodak Company | CMOS APS shared amplifier pixel with symmetrical field effect transistor placement |
US8253214B2 (en) * | 2005-06-02 | 2012-08-28 | Omnivision Technologies, Inc. | CMOS shared amplifier pixels with output signal wire below floating diffusion interconnect for reduced floating diffusion capacitance |
KR100723487B1 (ko) * | 2005-06-08 | 2007-06-04 | 삼성전자주식회사 | 이미지 센서에서 효율적인 금속 배선의 픽셀 회로 및 구동방법 |
JP4695979B2 (ja) * | 2005-12-26 | 2011-06-08 | パナソニック株式会社 | 固体撮像装置 |
JP4777772B2 (ja) | 2005-12-28 | 2011-09-21 | 富士通セミコンダクター株式会社 | 半導体撮像装置 |
US7667183B2 (en) * | 2006-03-10 | 2010-02-23 | Samsung Electronics Co., Ltd. | Image sensor with high fill factor pixels and method for forming an image sensor |
JP2007243093A (ja) * | 2006-03-13 | 2007-09-20 | Matsushita Electric Ind Co Ltd | 固体撮像装置、撮像装置および信号処理方法 |
JPWO2007108129A1 (ja) * | 2006-03-23 | 2009-07-30 | 富士通マイクロエレクトロニクス株式会社 | 固体撮像素子 |
JP5116264B2 (ja) * | 2006-07-10 | 2013-01-09 | キヤノン株式会社 | 光電変換装置、光電変換装置の製造方法および光電変換装置を用いた撮像システム |
JP4956084B2 (ja) * | 2006-08-01 | 2012-06-20 | キヤノン株式会社 | 光電変換装置及びそれを用いた撮像システム |
JP5110820B2 (ja) * | 2006-08-02 | 2012-12-26 | キヤノン株式会社 | 光電変換装置、光電変換装置の製造方法及び撮像システム |
KR100828942B1 (ko) * | 2006-12-19 | 2008-05-13 | (주)실리콘화일 | 4t-4s 스텝 & 리피트 단위 셀 및 상기 단위 셀을 구비한 이미지센서, 데이터 저장장치, 반도체 공정 마스크, 반도체 웨이퍼 |
JP2009059811A (ja) * | 2007-08-30 | 2009-03-19 | Sharp Corp | 固体撮像装置および電子情報機器 |
JP5038188B2 (ja) * | 2008-02-28 | 2012-10-03 | キヤノン株式会社 | 撮像装置及びそれを用いた撮像システム |
JP5134427B2 (ja) * | 2008-04-30 | 2013-01-30 | 浜松ホトニクス株式会社 | 固体撮像装置 |
US8035716B2 (en) * | 2008-06-13 | 2011-10-11 | Omnivision Technologies, Inc. | Wide aperture image sensor pixel |
JP2010016056A (ja) * | 2008-07-01 | 2010-01-21 | Canon Inc | 光電変換装置 |
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US8130302B2 (en) * | 2008-11-07 | 2012-03-06 | Aptina Imaging Corporation | Methods and apparatus providing selective binning of pixel circuits |
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JP2011129723A (ja) * | 2009-12-17 | 2011-06-30 | Sharp Corp | 固体撮像素子の製造方法 |
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KR20120047368A (ko) * | 2010-11-02 | 2012-05-14 | 삼성전자주식회사 | 이미지 센서 |
CN102158663B (zh) * | 2011-04-15 | 2013-09-11 | 北京思比科微电子技术股份有限公司 | Cmos图像传感器像素及其控制时序 |
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KR101989567B1 (ko) * | 2012-05-31 | 2019-06-14 | 삼성전자주식회사 | 이미지 센서 |
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TWI700823B (zh) * | 2014-06-27 | 2020-08-01 | 日商半導體能源研究所股份有限公司 | 攝像裝置及電子裝置 |
US9690892B2 (en) * | 2014-07-14 | 2017-06-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Masks based on gate pad layout patterns of standard cell having different gate pad pitches |
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KR102354991B1 (ko) | 2017-05-24 | 2022-01-24 | 삼성전자주식회사 | 픽셀 회로 및 이를 포함하는 이미지 센서 |
JP6481718B2 (ja) * | 2017-07-13 | 2019-03-13 | 株式会社ニコン | 固体撮像素子および撮像装置 |
JP6601520B2 (ja) * | 2018-03-12 | 2019-11-06 | 株式会社ニコン | 撮像素子、撮像素子の製造方法、及び電子機器 |
US11805324B2 (en) | 2018-04-05 | 2023-10-31 | Sony Semiconductor Solutions Corporation | Imaging device and image-capturing apparatus |
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US20230224602A1 (en) * | 2020-05-20 | 2023-07-13 | Sony Semiconductor Solutions Corporation | Solid-state imaging device |
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JP3031606B2 (ja) | 1995-08-02 | 2000-04-10 | キヤノン株式会社 | 固体撮像装置と画像撮像装置 |
JPH10256520A (ja) | 1997-03-14 | 1998-09-25 | Toshiba Corp | 増幅型固体撮像装置 |
JP3461265B2 (ja) | 1996-09-19 | 2003-10-27 | 株式会社東芝 | 固体撮像装置および固体撮像装置応用システム |
US6674470B1 (en) | 1996-09-19 | 2004-01-06 | Kabushiki Kaisha Toshiba | MOS-type solid state imaging device with high sensitivity |
US6160281A (en) | 1997-02-28 | 2000-12-12 | Eastman Kodak Company | Active pixel sensor with inter-pixel function sharing |
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US6977684B1 (en) * | 1998-04-30 | 2005-12-20 | Canon Kabushiki Kaisha | Arrangement of circuits in pixels, each circuit shared by a plurality of pixels, in image sensing apparatus |
US6466266B1 (en) | 1998-07-28 | 2002-10-15 | Eastman Kodak Company | Active pixel sensor with shared row timing signals |
US6657665B1 (en) | 1998-12-31 | 2003-12-02 | Eastman Kodak Company | Active Pixel Sensor with wired floating diffusions and shared amplifier |
JP2001285717A (ja) * | 2000-03-29 | 2001-10-12 | Toshiba Corp | 固体撮像装置 |
JP4721380B2 (ja) | 2000-04-14 | 2011-07-13 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP4246890B2 (ja) | 2000-06-26 | 2009-04-02 | 株式会社東芝 | 固体撮像装置 |
JP2002083949A (ja) | 2000-09-07 | 2002-03-22 | Nec Corp | Cmosイメージセンサ及びその製造方法 |
-
2004
- 2004-04-27 JP JP2004130806A patent/JP4230406B2/ja not_active Expired - Fee Related
- 2004-08-25 US US10/924,957 patent/US7557846B2/en not_active Expired - Fee Related
- 2004-08-30 TW TW093126045A patent/TWI242882B/zh not_active IP Right Cessation
- 2004-08-31 EP EP04255247A patent/EP1592066B1/en not_active Expired - Fee Related
- 2004-09-24 KR KR1020040076864A patent/KR100736192B1/ko active IP Right Grant
- 2004-09-30 CN CNB2004100811417A patent/CN100477242C/zh not_active Expired - Fee Related
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CN106653785A (zh) * | 2015-10-30 | 2017-05-10 | 瑞萨电子株式会社 | 半导体器件和其制造方法 |
CN111354752A (zh) * | 2018-12-20 | 2020-06-30 | 三星电子株式会社 | 图像传感器 |
CN111354752B (zh) * | 2018-12-20 | 2023-07-04 | 三星电子株式会社 | 图像传感器 |
Also Published As
Publication number | Publication date |
---|---|
US20050237405A1 (en) | 2005-10-27 |
US7557846B2 (en) | 2009-07-07 |
TWI242882B (en) | 2005-11-01 |
EP1592066A3 (en) | 2006-06-28 |
KR100736192B1 (ko) | 2007-07-06 |
TW200536114A (en) | 2005-11-01 |
EP1592066A2 (en) | 2005-11-02 |
KR20050103867A (ko) | 2005-11-01 |
JP2005317581A (ja) | 2005-11-10 |
EP1592066B1 (en) | 2011-05-25 |
JP4230406B2 (ja) | 2009-02-25 |
CN100477242C (zh) | 2009-04-08 |
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