CN1667839A - 薄膜器件的供给体及其制造方法、转印方法 - Google Patents
薄膜器件的供给体及其制造方法、转印方法 Download PDFInfo
- Publication number
- CN1667839A CN1667839A CNA200510052686XA CN200510052686A CN1667839A CN 1667839 A CN1667839 A CN 1667839A CN A200510052686X A CNA200510052686X A CN A200510052686XA CN 200510052686 A CN200510052686 A CN 200510052686A CN 1667839 A CN1667839 A CN 1667839A
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (25)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004067556 | 2004-03-10 | ||
JP2004067556 | 2004-03-10 | ||
JP2004191359 | 2004-06-29 | ||
JP2004191359 | 2004-06-29 | ||
JP2004366725A JP2006049800A (ja) | 2004-03-10 | 2004-12-17 | 薄膜デバイスの供給体、薄膜デバイスの供給体の製造方法、転写方法、半導体装置の製造方法及び電子機器 |
JP2004366725 | 2004-12-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1667839A true CN1667839A (zh) | 2005-09-14 |
CN100413092C CN100413092C (zh) | 2008-08-20 |
Family
ID=34830991
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200510052686XA Active CN100413092C (zh) | 2004-03-10 | 2005-03-03 | 薄膜器件的供给体及其制造方法、转印方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7262088B2 (zh) |
EP (1) | EP1575085A2 (zh) |
JP (1) | JP2006049800A (zh) |
KR (1) | KR100787901B1 (zh) |
CN (1) | CN100413092C (zh) |
TW (2) | TWI310207B (zh) |
Cited By (7)
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CN101471347B (zh) * | 2007-12-26 | 2012-02-01 | 上海新傲科技股份有限公司 | 半导体衬底、半导体衬底的制备方法及三维封装方法 |
CN102623472A (zh) * | 2012-03-27 | 2012-08-01 | 格科微电子(上海)有限公司 | 去除csp封装型图像传感器芯片表面透光板的方法 |
CN103814437A (zh) * | 2011-09-22 | 2014-05-21 | 住友化学株式会社 | 复合基板的制造方法及复合基板 |
CN107039239A (zh) * | 2015-11-27 | 2017-08-11 | 信越化学工业株式会社 | 晶片加工体以及晶片加工方法 |
WO2018068380A1 (zh) * | 2016-10-11 | 2018-04-19 | 武汉华星光电技术有限公司 | 柔性oled显示器及其制作方法 |
CN112701077A (zh) * | 2020-12-28 | 2021-04-23 | 广东省科学院半导体研究所 | 器件转移方法 |
CN112967992A (zh) * | 2020-12-07 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | 外延结构的转移方法 |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7745798B2 (en) * | 2005-11-15 | 2010-06-29 | Fujifilm Corporation | Dual-phosphor flat panel radiation detector |
US7759167B2 (en) * | 2005-11-23 | 2010-07-20 | Imec | Method for embedding dies |
US8173519B2 (en) | 2006-03-03 | 2012-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP5288581B2 (ja) * | 2006-03-03 | 2013-09-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US20080003780A1 (en) * | 2006-06-30 | 2008-01-03 | Haixiao Sun | Detachable stiffener for ultra-thin die |
KR101095159B1 (ko) * | 2006-07-05 | 2011-12-16 | 아리조나 보드 오브 리전트스, 아리조나주의 아리조나 주립대 대행법인 | 기판에 경질 캐리어를 일시 부착시키는 방법 |
TWI433306B (zh) | 2006-09-29 | 2014-04-01 | Semiconductor Energy Lab | 半導體裝置的製造方法 |
JP4301302B2 (ja) | 2007-02-06 | 2009-07-22 | セイコーエプソン株式会社 | 半導体装置、半導体装置の製造方法及び電子機器 |
CN101663733B (zh) | 2007-04-20 | 2013-02-27 | 株式会社半导体能源研究所 | 制造绝缘体上硅衬底和半导体器件的方法 |
JP5367330B2 (ja) * | 2007-09-14 | 2013-12-11 | 株式会社半導体エネルギー研究所 | Soi基板の作製方法及び半導体装置の作製方法 |
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- 2005-02-25 TW TW096149735A patent/TW200816462A/zh unknown
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- 2005-03-08 EP EP05005004A patent/EP1575085A2/en not_active Withdrawn
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CN112967992B (zh) * | 2020-12-07 | 2022-09-23 | 重庆康佳光电技术研究院有限公司 | 外延结构的转移方法 |
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KR100787901B1 (ko) | 2007-12-27 |
CN100413092C (zh) | 2008-08-20 |
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TW200532762A (en) | 2005-10-01 |
US7262088B2 (en) | 2007-08-28 |
KR20060043012A (ko) | 2006-05-15 |
EP1575085A2 (en) | 2005-09-14 |
JP2006049800A (ja) | 2006-02-16 |
US20050202619A1 (en) | 2005-09-15 |
US7456059B2 (en) | 2008-11-25 |
TW200816462A (en) | 2008-04-01 |
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