KR100787901B1 - 박막 디바이스 공급체, 박막 디바이스 공급체의 제조 방법, 전사 방법 및 반도체 장치의 제조 방법 - Google Patents
박막 디바이스 공급체, 박막 디바이스 공급체의 제조 방법, 전사 방법 및 반도체 장치의 제조 방법 Download PDFInfo
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- KR100787901B1 KR100787901B1 KR1020050013960A KR20050013960A KR100787901B1 KR 100787901 B1 KR100787901 B1 KR 100787901B1 KR 1020050013960 A KR1020050013960 A KR 1020050013960A KR 20050013960 A KR20050013960 A KR 20050013960A KR 100787901 B1 KR100787901 B1 KR 100787901B1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2004-00067556 | 2004-03-10 | ||
JP2004067556 | 2004-03-10 | ||
JPJP-P-2004-00191359 | 2004-06-29 | ||
JP2004191359 | 2004-06-29 | ||
JPJP-P-2004-00366725 | 2004-12-17 | ||
JP2004366725A JP2006049800A (ja) | 2004-03-10 | 2004-12-17 | 薄膜デバイスの供給体、薄膜デバイスの供給体の製造方法、転写方法、半導体装置の製造方法及び電子機器 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060043012A KR20060043012A (ko) | 2006-05-15 |
KR100787901B1 true KR100787901B1 (ko) | 2007-12-27 |
Family
ID=34830991
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020050013960A KR100787901B1 (ko) | 2004-03-10 | 2005-02-21 | 박막 디바이스 공급체, 박막 디바이스 공급체의 제조 방법, 전사 방법 및 반도체 장치의 제조 방법 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7262088B2 (zh) |
EP (1) | EP1575085A2 (zh) |
JP (1) | JP2006049800A (zh) |
KR (1) | KR100787901B1 (zh) |
CN (1) | CN100413092C (zh) |
TW (2) | TW200816462A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210114489A (ko) * | 2019-02-25 | 2021-09-23 | 미쓰비시덴키 가부시키가이샤 | 반도체 소자의 제조 방법 |
Families Citing this family (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7745798B2 (en) * | 2005-11-15 | 2010-06-29 | Fujifilm Corporation | Dual-phosphor flat panel radiation detector |
US7759167B2 (en) * | 2005-11-23 | 2010-07-20 | Imec | Method for embedding dies |
JP5288581B2 (ja) * | 2006-03-03 | 2013-09-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US8173519B2 (en) | 2006-03-03 | 2012-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20080003780A1 (en) * | 2006-06-30 | 2008-01-03 | Haixiao Sun | Detachable stiffener for ultra-thin die |
KR101095159B1 (ko) * | 2006-07-05 | 2011-12-16 | 아리조나 보드 오브 리전트스, 아리조나주의 아리조나 주립대 대행법인 | 기판에 경질 캐리어를 일시 부착시키는 방법 |
TWI611565B (zh) * | 2006-09-29 | 2018-01-11 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
JP4301302B2 (ja) | 2007-02-06 | 2009-07-22 | セイコーエプソン株式会社 | 半導体装置、半導体装置の製造方法及び電子機器 |
WO2008132895A1 (en) * | 2007-04-20 | 2008-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing soi substrate and semiconductor device |
JP5367330B2 (ja) * | 2007-09-14 | 2013-12-11 | 株式会社半導体エネルギー研究所 | Soi基板の作製方法及び半導体装置の作製方法 |
US8236668B2 (en) * | 2007-10-10 | 2012-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
JP5464843B2 (ja) | 2007-12-03 | 2014-04-09 | 株式会社半導体エネルギー研究所 | Soi基板の作製方法 |
CN101471347B (zh) * | 2007-12-26 | 2012-02-01 | 上海新傲科技股份有限公司 | 半导体衬底、半导体衬底的制备方法及三维封装方法 |
DE102008031533B4 (de) * | 2008-07-03 | 2021-10-21 | Pictiva Displays International Limited | Organisches elektronisches Bauelement |
KR101055473B1 (ko) * | 2009-12-15 | 2011-08-08 | 삼성전기주식회사 | 기판 제조용 캐리어 부재 및 이를 이용한 기판의 제조방법 |
US8440544B2 (en) * | 2010-10-06 | 2013-05-14 | International Business Machines Corporation | CMOS structure and method of manufacture |
CA2772110C (en) * | 2011-02-01 | 2013-07-23 | Micro Technology Co., Ltd. | Thin-sheet glass substrate laminate and method of manufacturing the same |
KR101893530B1 (ko) * | 2011-03-10 | 2018-08-31 | 삼성디스플레이 주식회사 | 가요성 표시 장치 및 이의 제조 방법 |
JP5355618B2 (ja) | 2011-03-10 | 2013-11-27 | 三星ディスプレイ株式會社 | 可撓性表示装置及びこの製造方法 |
SG195119A1 (en) * | 2011-05-23 | 2013-12-30 | Univ Singapore | Method of transferring thin films |
KR101870798B1 (ko) * | 2011-08-30 | 2018-06-26 | 엘지디스플레이 주식회사 | 플렉서블 디스플레이 장치와 이의 제조방법 |
JP2013080896A (ja) * | 2011-09-22 | 2013-05-02 | Sumitomo Chemical Co Ltd | 複合基板の製造方法および複合基板 |
JP2015513211A (ja) * | 2012-01-30 | 2015-04-30 | スリーエム イノベイティブ プロパティズ カンパニー | 一時的な基板支持のための装置、複合積層体、方法、及び材料 |
CN102623472B (zh) * | 2012-03-27 | 2015-07-22 | 格科微电子(上海)有限公司 | 去除csp封装型图像传感器芯片表面透光板的方法 |
JP6580808B2 (ja) * | 2012-06-19 | 2019-09-25 | 日鉄ケミカル&マテリアル株式会社 | 表示装置及びその製造方法 |
WO2014051230A1 (ko) * | 2012-09-28 | 2014-04-03 | 하나마이크론(주) | 유연 집적 회로 소자 패키지의 제조 장치 |
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CN109564851A (zh) | 2016-08-31 | 2019-04-02 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
US10923350B2 (en) | 2016-08-31 | 2021-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US10369664B2 (en) | 2016-09-23 | 2019-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
CN106328683B (zh) * | 2016-10-11 | 2019-04-30 | 武汉华星光电技术有限公司 | 柔性oled显示器及其制作方法 |
JP2018117060A (ja) * | 2017-01-19 | 2018-07-26 | 株式会社ブイ・テクノロジー | 剥離基板及びレーザリフトオフ方法 |
WO2019185109A1 (en) * | 2018-03-26 | 2019-10-03 | Applied Materials, Inc. | Method for producing a flexible device, flexible electronic device and flexible arrangement of a plurality of electronic devices |
JP7143023B2 (ja) * | 2018-08-06 | 2022-09-28 | 株式会社ディスコ | ウェーハの加工方法 |
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CN111900106B (zh) * | 2020-06-30 | 2022-03-08 | 中国电子科技集团公司第五十五研究所 | 一种大面积柔性衬底InP HBT器件及其制备方法 |
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CN112701077A (zh) * | 2020-12-28 | 2021-04-23 | 广东省科学院半导体研究所 | 器件转移方法 |
CN114520080B (zh) * | 2022-02-11 | 2022-10-04 | 清华大学 | 柔性电子器件的制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10125931A (ja) * | 1996-08-27 | 1998-05-15 | Seiko Epson Corp | 薄膜素子の転写方法,薄膜素子,薄膜集積回路装置,アクティブマトリクス基板および液晶表示装置 |
JP2000068418A (ja) * | 1998-08-19 | 2000-03-03 | Toray Ind Inc | 半導体装置 |
JP2004097228A (ja) * | 1992-03-19 | 2004-04-02 | Monsanto Technology Llc | 植物内での増強発現 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4727047A (en) * | 1980-04-10 | 1988-02-23 | Massachusetts Institute Of Technology | Method of producing sheets of crystalline material |
JP3191827B2 (ja) * | 1991-04-26 | 2001-07-23 | 住友電気工業株式会社 | 半導体基板の剥離装置 |
JP3809681B2 (ja) | 1996-08-27 | 2006-08-16 | セイコーエプソン株式会社 | 剥離方法 |
EP1758169A3 (en) | 1996-08-27 | 2007-05-23 | Seiko Epson Corporation | Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same |
JP4619461B2 (ja) | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | 薄膜デバイスの転写方法、及びデバイスの製造方法 |
JPH1126733A (ja) | 1997-07-03 | 1999-01-29 | Seiko Epson Corp | 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置,アクティブマトリクス基板、液晶表示装置および電子機器 |
JP3738798B2 (ja) * | 1997-07-03 | 2006-01-25 | セイコーエプソン株式会社 | アクティブマトリクス基板の製造方法及び液晶パネルの製造方法 |
JPH11243209A (ja) | 1998-02-25 | 1999-09-07 | Seiko Epson Corp | 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置、アクティブマトリクス基板、液晶表示装置および電子機器 |
JP2000133809A (ja) | 1998-10-27 | 2000-05-12 | Seiko Epson Corp | 剥離方法 |
JP3809739B2 (ja) | 1999-02-17 | 2006-08-16 | セイコーエプソン株式会社 | フィルタ付き表示装置の製造方法 |
JP3804349B2 (ja) | 1999-08-06 | 2006-08-02 | セイコーエプソン株式会社 | 薄膜デバイス装置の製造方法、アクティブマトリクス基板の製造方法、および電気光学装置 |
JP4478268B2 (ja) * | 1999-12-28 | 2010-06-09 | セイコーエプソン株式会社 | 薄膜デバイスの製造方法 |
JP2001267578A (ja) * | 2000-03-17 | 2001-09-28 | Sony Corp | 薄膜半導体装置及びその製造方法 |
JP4152574B2 (ja) * | 2000-09-25 | 2008-09-17 | 株式会社半導体エネルギー研究所 | 薄膜の成膜方法および半導体装置の製造方法 |
JP4538951B2 (ja) * | 2000-12-15 | 2010-09-08 | ソニー株式会社 | 素子の選択転写方法、画像表示装置の製造方法及び液晶表示装置の製造方法 |
JP2002217391A (ja) | 2001-01-23 | 2002-08-02 | Seiko Epson Corp | 積層体の製造方法及び半導体装置 |
JP4061846B2 (ja) * | 2001-01-23 | 2008-03-19 | セイコーエプソン株式会社 | 積層体の製造方法及び半導体装置の製造方法 |
JP4019305B2 (ja) | 2001-07-13 | 2007-12-12 | セイコーエプソン株式会社 | 薄膜装置の製造方法 |
WO2003010825A1 (en) * | 2001-07-24 | 2003-02-06 | Seiko Epson Corporation | Transfer method, method of manufacturing thin film element, method of manufacturing integrated circuit, circuit substrate and method of manufacturing the circuit substrate, electro-optic device and method of manufacturing the electro-optic device, and ic card and electronic equipmen |
JP2003229548A (ja) | 2001-11-30 | 2003-08-15 | Semiconductor Energy Lab Co Ltd | 乗物、表示装置、および半導体装置の作製方法 |
JP2003298029A (ja) | 2002-03-28 | 2003-10-17 | Seiko Epson Corp | 剥離転写装置、剥離転写方法、半導体装置及びicカード |
US7101729B2 (en) | 2002-03-28 | 2006-09-05 | Seiko Epson Corporation | Method of manufacturing a semiconductor device having adjoining substrates |
JP2003297974A (ja) | 2002-03-29 | 2003-10-17 | Seiko Epson Corp | 半導体装置、電気光学装置および半導体装置の製造方法 |
JP2003298006A (ja) | 2002-03-29 | 2003-10-17 | Seiko Epson Corp | 半導体装置および電気光学装置 |
JP4411575B2 (ja) | 2002-04-25 | 2010-02-10 | セイコーエプソン株式会社 | 電子装置の製造装置 |
TWI272641B (en) * | 2002-07-16 | 2007-02-01 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
WO2004064018A1 (ja) * | 2003-01-15 | 2004-07-29 | Semiconductor Energy Laboratory Co., Ltd. | 剥離方法及びその剥離方法を用いた表示装置の作製方法 |
JP2004319538A (ja) * | 2003-04-10 | 2004-11-11 | Seiko Epson Corp | 半導体装置の製造方法、集積回路、電子光学装置及び電子機器 |
-
2004
- 2004-12-17 JP JP2004366725A patent/JP2006049800A/ja active Pending
-
2005
- 2005-02-21 KR KR1020050013960A patent/KR100787901B1/ko active IP Right Grant
- 2005-02-25 TW TW096149735A patent/TW200816462A/zh unknown
- 2005-02-25 TW TW094105892A patent/TWI310207B/zh active
- 2005-03-03 CN CNB200510052686XA patent/CN100413092C/zh active Active
- 2005-03-07 US US11/072,500 patent/US7262088B2/en active Active
- 2005-03-08 EP EP05005004A patent/EP1575085A2/en not_active Withdrawn
-
2007
- 2007-07-24 US US11/878,377 patent/US7456059B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004097228A (ja) * | 1992-03-19 | 2004-04-02 | Monsanto Technology Llc | 植物内での増強発現 |
JPH10125931A (ja) * | 1996-08-27 | 1998-05-15 | Seiko Epson Corp | 薄膜素子の転写方法,薄膜素子,薄膜集積回路装置,アクティブマトリクス基板および液晶表示装置 |
JP2000068418A (ja) * | 1998-08-19 | 2000-03-03 | Toray Ind Inc | 半導体装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210114489A (ko) * | 2019-02-25 | 2021-09-23 | 미쓰비시덴키 가부시키가이샤 | 반도체 소자의 제조 방법 |
KR102588785B1 (ko) | 2019-02-25 | 2023-10-12 | 미쓰비시덴키 가부시키가이샤 | 반도체 소자의 제조 방법 |
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TW200532762A (en) | 2005-10-01 |
CN100413092C (zh) | 2008-08-20 |
TW200816462A (en) | 2008-04-01 |
EP1575085A2 (en) | 2005-09-14 |
TWI310207B (en) | 2009-05-21 |
US20050202619A1 (en) | 2005-09-15 |
KR20060043012A (ko) | 2006-05-15 |
US7262088B2 (en) | 2007-08-28 |
US7456059B2 (en) | 2008-11-25 |
US20070287242A1 (en) | 2007-12-13 |
CN1667839A (zh) | 2005-09-14 |
JP2006049800A (ja) | 2006-02-16 |
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