JP2015513211A - 一時的な基板支持のための装置、複合積層体、方法、及び材料 - Google Patents
一時的な基板支持のための装置、複合積層体、方法、及び材料 Download PDFInfo
- Publication number
- JP2015513211A JP2015513211A JP2014554808A JP2014554808A JP2015513211A JP 2015513211 A JP2015513211 A JP 2015513211A JP 2014554808 A JP2014554808 A JP 2014554808A JP 2014554808 A JP2014554808 A JP 2014554808A JP 2015513211 A JP2015513211 A JP 2015513211A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- thermoplastic
- bonding layer
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 101
- 238000000034 method Methods 0.000 title claims description 49
- 239000002131 composite material Substances 0.000 title abstract 3
- 239000000463 material Substances 0.000 title description 33
- 229920001169 thermoplastic Polymers 0.000 claims abstract description 66
- 239000004416 thermosoftening plastic Substances 0.000 claims abstract description 66
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 16
- 239000010703 silicon Substances 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 239000000853 adhesive Substances 0.000 claims description 68
- 230000001070 adhesive effect Effects 0.000 claims description 67
- 238000006243 chemical reaction Methods 0.000 claims description 64
- 238000000576 coating method Methods 0.000 claims description 41
- 239000011248 coating agent Substances 0.000 claims description 39
- 229920005989 resin Polymers 0.000 claims description 29
- 239000011347 resin Substances 0.000 claims description 29
- 229920001187 thermosetting polymer Polymers 0.000 claims description 28
- 239000006096 absorbing agent Substances 0.000 claims description 26
- 239000002904 solvent Substances 0.000 claims description 24
- 239000006229 carbon black Substances 0.000 claims description 22
- 238000012545 processing Methods 0.000 claims description 19
- 239000011521 glass Substances 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 15
- 230000005855 radiation Effects 0.000 claims description 11
- 238000001035 drying Methods 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 3
- 239000003522 acrylic cement Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 245
- 235000012431 wafers Nutrition 0.000 description 117
- 239000000945 filler Substances 0.000 description 26
- 238000000227 grinding Methods 0.000 description 22
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 18
- 239000000203 mixture Substances 0.000 description 12
- 229920000110 poly(aryl ether sulfone) Polymers 0.000 description 12
- 238000000926 separation method Methods 0.000 description 11
- 229910000679 solder Inorganic materials 0.000 description 11
- -1 aliphatic diamine metal complex Chemical class 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 9
- 238000001723 curing Methods 0.000 description 9
- 239000011148 porous material Substances 0.000 description 9
- 238000005979 thermal decomposition reaction Methods 0.000 description 8
- 239000004593 Epoxy Substances 0.000 description 7
- 238000009472 formulation Methods 0.000 description 7
- 239000003607 modifier Substances 0.000 description 7
- 238000004528 spin coating Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 229920001971 elastomer Polymers 0.000 description 6
- 239000000178 monomer Substances 0.000 description 6
- 238000010943 off-gassing Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- WNXJIVFYUVYPPR-UHFFFAOYSA-N 1,3-dioxolane Chemical compound C1COCO1 WNXJIVFYUVYPPR-UHFFFAOYSA-N 0.000 description 5
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000000654 additive Substances 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229920000058 polyacrylate Polymers 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 239000002390 adhesive tape Substances 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 230000032798 delamination Effects 0.000 description 4
- 239000003085 diluting agent Substances 0.000 description 4
- 239000000975 dye Substances 0.000 description 4
- 239000003999 initiator Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920000728 polyester Polymers 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000005060 rubber Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000004831 Hot glue Substances 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical group C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 210000000078 claw Anatomy 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 238000007607 die coating method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 239000012046 mixed solvent Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229920002635 polyurethane Polymers 0.000 description 3
- 239000004814 polyurethane Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 239000012815 thermoplastic material Substances 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- UZKWTJUDCOPSNM-UHFFFAOYSA-N 1-ethenoxybutane Chemical compound CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- SMNDYUVBFMFKNZ-UHFFFAOYSA-N 2-furoic acid Chemical compound OC(=O)C1=CC=CO1 SMNDYUVBFMFKNZ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000000806 elastomer Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 2
- 239000004088 foaming agent Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 125000005395 methacrylic acid group Chemical group 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000006552 photochemical reaction Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000000379 polymerizing effect Effects 0.000 description 2
- 229920000193 polymethacrylate Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229920005573 silicon-containing polymer Polymers 0.000 description 2
- 230000007928 solubilization Effects 0.000 description 2
- 238000005063 solubilization Methods 0.000 description 2
- 238000010345 tape casting Methods 0.000 description 2
- 150000003673 urethanes Chemical class 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical compound C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 description 1
- REPVLJRCJUVQFA-UHFFFAOYSA-N (-)-isopinocampheol Natural products C1C(O)C(C)C2C(C)(C)C1C2 REPVLJRCJUVQFA-UHFFFAOYSA-N 0.000 description 1
- DSSYKIVIOFKYAU-XCBNKYQSSA-N (R)-camphor Chemical compound C1C[C@@]2(C)C(=O)C[C@@H]1C2(C)C DSSYKIVIOFKYAU-XCBNKYQSSA-N 0.000 description 1
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 1
- OEPOKWHJYJXUGD-UHFFFAOYSA-N 2-(3-phenylmethoxyphenyl)-1,3-thiazole-4-carbaldehyde Chemical compound O=CC1=CSC(C=2C=C(OCC=3C=CC=CC=3)C=CC=2)=N1 OEPOKWHJYJXUGD-UHFFFAOYSA-N 0.000 description 1
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 description 1
- DMOYBIUAWCVPLF-UHFFFAOYSA-N 2-diazonio-5,5-dimethyl-3-oxocyclohexen-1-olate Chemical compound CC1(C)CC([O-])=C([N+]#N)C(=O)C1 DMOYBIUAWCVPLF-UHFFFAOYSA-N 0.000 description 1
- RZVINYQDSSQUKO-UHFFFAOYSA-N 2-phenoxyethyl prop-2-enoate Chemical compound C=CC(=O)OCCOC1=CC=CC=C1 RZVINYQDSSQUKO-UHFFFAOYSA-N 0.000 description 1
- ICGLPKIVTVWCFT-UHFFFAOYSA-N 4-methylbenzenesulfonohydrazide Chemical compound CC1=CC=C(S(=O)(=O)NN)C=C1 ICGLPKIVTVWCFT-UHFFFAOYSA-N 0.000 description 1
- QHPQWRBYOIRBIT-UHFFFAOYSA-N 4-tert-butylphenol Chemical compound CC(C)(C)C1=CC=C(O)C=C1 QHPQWRBYOIRBIT-UHFFFAOYSA-N 0.000 description 1
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 1
- 239000004156 Azodicarbonamide Substances 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000723346 Cinnamomum camphora Species 0.000 description 1
- MWRWFPQBGSZWNV-UHFFFAOYSA-N Dinitrosopentamethylenetetramine Chemical compound C1N2CN(N=O)CN1CN(N=O)C2 MWRWFPQBGSZWNV-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 229920001710 Polyorthoester Polymers 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- 229920004738 ULTEM® Polymers 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- FMRLDPWIRHBCCC-UHFFFAOYSA-L Zinc carbonate Chemical compound [Zn+2].[O-]C([O-])=O FMRLDPWIRHBCCC-UHFFFAOYSA-L 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 125000002777 acetyl group Chemical class [H]C([H])([H])C(*)=O 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229920006397 acrylic thermoplastic Polymers 0.000 description 1
- IYKFYARMMIESOX-UHFFFAOYSA-N adamantanone Chemical compound C1C(C2)CC3CC1C(=O)C2C3 IYKFYARMMIESOX-UHFFFAOYSA-N 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 239000001099 ammonium carbonate Substances 0.000 description 1
- 235000012501 ammonium carbonate Nutrition 0.000 description 1
- 239000001000 anthraquinone dye Substances 0.000 description 1
- 239000000010 aprotic solvent Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- XOZUGNYVDXMRKW-AATRIKPKSA-N azodicarbonamide Chemical compound NC(=O)\N=N\C(N)=O XOZUGNYVDXMRKW-AATRIKPKSA-N 0.000 description 1
- 235000019399 azodicarbonamide Nutrition 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- CKDOCTFBFTVPSN-UHFFFAOYSA-N borneol Natural products C1CC2(C)C(C)CC1C2(C)C CKDOCTFBFTVPSN-UHFFFAOYSA-N 0.000 description 1
- 229940116229 borneol Drugs 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- DNSISZSEWVHGLH-UHFFFAOYSA-N butanamide Chemical compound CCCC(N)=O DNSISZSEWVHGLH-UHFFFAOYSA-N 0.000 description 1
- 229930008380 camphor Natural products 0.000 description 1
- 229960000846 camphor Drugs 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229950001902 dimevamide Drugs 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- DTGKSKDOIYIVQL-UHFFFAOYSA-N dl-isoborneol Natural products C1CC2(C)C(O)CC1C2(C)C DTGKSKDOIYIVQL-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000012760 heat stabilizer Substances 0.000 description 1
- ACCCMOQWYVYDOT-UHFFFAOYSA-N hexane-1,1-diol Chemical compound CCCCCC(O)O ACCCMOQWYVYDOT-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M methacrylate group Chemical group C(C(=C)C)(=O)[O-] CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 125000001434 methanylylidene group Chemical group [H]C#[*] 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229940075566 naphthalene Drugs 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- IPWFJLQDVFKJDU-UHFFFAOYSA-N pentanamide Chemical compound CCCCC(N)=O IPWFJLQDVFKJDU-UHFFFAOYSA-N 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000002745 poly(ortho ester) Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 150000008442 polyphenolic compounds Chemical class 0.000 description 1
- 235000013824 polyphenols Nutrition 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003381 solubilizing effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000012756 surface treatment agent Substances 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- ANRHNWWPFJCPAZ-UHFFFAOYSA-M thionine Chemical compound [Cl-].C1=CC(N)=CC2=[S+]C3=CC(N)=CC=C3N=C21 ANRHNWWPFJCPAZ-UHFFFAOYSA-M 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- 229920001567 vinyl ester resin Polymers 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 235000004416 zinc carbonate Nutrition 0.000 description 1
- 229910000010 zinc carbonate Inorganic materials 0.000 description 1
- 239000011667 zinc carbonate Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/10—Removing layers, or parts of layers, mechanically or chemically
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
- B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
- B32B2037/243—Coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/14—Semiconductor wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B33/00—Layered products characterised by particular properties or particular surface features, e.g. particular surface coatings; Layered products designed for particular purposes not covered by another single class
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
- B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
- B32B43/006—Delaminating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
- Y10T428/2839—Web or sheet containing structurally defined element or component and having an adhesive outermost layer with release or antistick coating
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Laser Beam Processing (AREA)
Abstract
Description
「化学線」とは、光化学反応を発生させ得る任意の電磁線であって、紫外線、可視線、及び赤外線を含む、電磁線を指し、
「光透過性支持体」とは、相当量の(光化学反応を生じさせるのに十分な)化学線を透過させ得る材料を指し、
「潜在剥離層」とは、2種類の材料を互いに束ねるが、外的刺激に暴露されるとどちらか一方の材料への接着力を失い得る層を指し、
「熱可塑性」とは、可逆的に、加熱されると液体に変わり、冷却されると非常にガラス質の状態へと凝固するポリマーを指し、
「熱硬化性樹脂」又は「熱硬化性」とは、不可逆的に硬化する高分子材料を指す。
本開示は、例えば、複数の大規模集積(LSI)装置及び受動部品が単一のパッケージに収容されて多機能又は高性能を実現するシステムインパッケージと呼ばれる装置形態で有用であり、積重ね型マルチチップパッケージと呼ばれる。本開示によれば、25μm以下のウエハが、これらの装置に対して高収率で確実に製造され得る。
この装置において、各チップは貫通電極によって接続され、それにより、配線の長さが短縮され、電気特性が改善される。貫通電極を形成するための貫通孔の形成、及びその貫通孔への銅の埋め込みなどの技術的問題を解決するために、チップは、厚さを更に低減され得る。そのような構成を有するチップを、本開示の積層物を使用して後に形成する場合、絶縁フィルムとバンプ(電極)がウエハの裏面に形成されることがあり、積層物は熱と薬品に対する耐性を必要とする。この場合でも、上述の支持体、光熱変換層、及び接合層が選択されると、本開示は有効に用いられ得る。
シリコンと比べて電気特性(高電子移動度、直接遷移型のバンド構造)が有利であるがために、ガリウムヒ素などの化合物半導体が高性能個別チップ、レーザーダイオードなどに使用されている。本開示の積層物を使用し、それによってチップの厚さを低減することで、チップの熱放散効率が向上し、性能が改善される。現在、厚さの低減及び電極の形成のための研削操作は、グリース又はレジスト材料を使用して、半導体ウエハを支持体としてのガラス基板に接合することによって実施されている。したがって、加工の完了後にウエハをガラス基板から分離するために、接合材料は溶媒によって溶解されてもよい。これは、分離に数日以上を要し、廃液を処理しなければならないという問題を伴う。これらの問題は、本開示の積層物が使用されると解決され得る。
大型ウエハ(例えば、12インチ(30.5cm)径のシリコンウエハ)の場合、ウエハと支持体とを容易に分離することが非常に重要である。この分離は、本開示の積層体が使用されると容易に実施されることができ、したがって、本開示はこの分野にも適用され得る。
水晶ウエハの分野において、ウエハの厚さの低減は、振動周波数を増加させるために必要となる。この分離は、本開示の積層物が使用されると容易に実施されることができ、したがって、本開示はこの分野にも適用され得る。
液晶ディスプレイの分野において、ガラスの厚さの低減は、ディスプレイの重量を低減するために望まれ、ガラスは均一な厚さをなすことが望まれる。この分離は、本開示の積層物が使用されると容易に実施されることができ、したがって、本開示はこの分野にも適用され得る。
引き剥がし力の測定
裏面を研削し、ガラス支持体をウエハ試験片から剥離した後、ウエハ試験片上のEP2020Pコーティングと接着剤配合物Aとの間の引き剥がし力を測定するために、引き剥がし力の測定を実施した。詳細については実施例1を参照されたい。ミネソタ州イーデンプレーリー(Eden Prairie)のMTSシステムズ社(MTS System Corp.)から入手可能な、30kNの能力を有するINSIGHT MATERIALS TESTING SYSTEM 30EL、820.030−ELで引き剥がし力の測定を行った。ミネソタ州セントポール(St. Paul)のスリーエム社(3M Company)から入手可能なWAFER DE−TAPING TAPE 3305の一片を、ウエハ試験片上の接着剤配合物Aの表面に積層した。テープの約75mmのつまみが試験片の縁部から延びるように、テープの寸法を定めた。安全カミソリの刃を使用して、約25mm離れた2本の平行な切れ目をテープとその下の接着剤に作った。引張り試験器のベースプレート固定具内の装着プレートに試験片を装着した。次いで75mmのテープのつまみを引張り試験器の上方固定具に取り付けた。前記固定具は、90度の引き剥がし試験が125mm/分の速度で実施され得るように垂直ロードセルに連結されていた。
フロリダ州ダニーディン(Dunedin)のオーシャンオプティクス社(Ocean Optics)からNIRQUEST 512−2.5の商標表記で入手可能な近赤外線分光計を使用して、カーボンブラック充填E2020Pポリアリールエーテルスルホンコーティングの光学測定を行った。N,N−ジメチルアセトアミド/1,3−ジオキソラン(2/1)溶媒溶液中の10%(w/w)のカーボンブラック充填E2020Pポリアリールエーテルスルホンを剥離ライナーにコーティングした。このコーティング溶液の調製に関する詳細については、実施例2を参照されたい。150℃で5分間乾燥させた後、コーティングは約20マイクロメートル厚となった。剥離ライナーをコーティングから取り除き、コーティングを分光計のエミッタとディテクタとの間に置いた。フィルムの透過率を測定した。
混合溶媒、N,N−ジメチルアセトアミドと1,3−ジオキソランとの2/1重量比の混合物中のEP2020Pの20%(w/w)溶液を調製した。EP2020Pが溶解し、溶液が完全に混合した後、シリンジを使用して、約2cm3の溶液をウエハ試験片、つまり、はんだボールバンプ付きの半導体ウエハの100mm×100mm片上に置いた。ウエハ片は、それぞれ直径約85マイクロメートルのはんだボールの規則的配列を持つ、平坦なポリイミド表面を備えていた。25秒間にわたって1,000rpmのスピンコーティングによって、溶液を試験片に均一にコーティングした。ポリマー溶液でコーティングされたウエハ試験片を5分間にわたって150℃のオーブンで加熱して、コーティングを乾燥させた。
以下を除いて実施例1で説明したものと類似したE2020P溶液を、実施例2にコーティングした。ウエハ試験片に、E2020Pポリアリールエーテルスルホン、カーボンブラック、N,N−ジメチルアセトアミド/1,3−ジオキソラン(2/1)溶媒溶液をコーティングした。16部の溶媒に4部のE2020Pを加え、これらを混合してE2020Pを溶解させ、続いて2部のカーボンブラックを添加した。2,250rpmで動作する、サウスカロライナ州ランドラム(Landrum)のFlackTek社(FlackTek Inc.)から入手可能なHauschild SPEEDMIXER DAC 600 FVを使用して、4分間にわたってカーボンブラック−ポリアリールエーテルスルホン溶液を混合した。カーボンブラック−ポリアリールエーテルスルホン溶液をウエハ試験片にスピンコーティングした後、5分間にわたって150℃のオーブンに試験片を置くことによって、コーティングを乾燥させた。コーティング厚さは約20マイクロメートルであった。この厚さで、コーティングは、1,064nm YAGレーザー波長の約99.9%の赤外線遮断、すなわち約0.1%の透過をもたらす。次いで、実施例1で説明したものと同じ溶媒とスピン・スプレー技術を用いて、カーボンブラック充填E2020Pポリアリールエーテルスルホンコーティングをウエハ基板表面から溶媒洗浄した。この溶媒洗浄により、残留するカーボンブラック又はポリアリールエーテルスルホンのない清浄なウエハ表面が得られた。
Claims (15)
- 光透過性支持体と、
前記光透過性支持体の上に配設された潜在剥離層と、
前記潜在剥離層の上に配設された接合層と、
前記接合層の上に配設された熱可塑性下塗層と、を備える積層体。 - 前記光透過性支持体はガラスを含む、請求項1に記載の積層体。
- 前記潜在剥離層は光熱変換層を含む、請求項1に記載の積層体。
- 前記潜在剥離層は、レーザー又はレーザーダイオードから発せられる化学線に暴露されると活性化される、請求項2に記載の積層体。
- 前記光熱変換層は、吸光剤と、前記接合層に隣接して配設された熱分解性樹脂とを含む、請求項3に記載の積層体。
- 前記吸光剤はカーボンブラックを含む、請求項5に記載の積層体。
- 前記接合層は熱硬化性接着剤を含む、請求項1に記載の積層体。
- 前記熱硬化性接着剤はアクリル接着剤を含む、請求項7に記載の積層体。
- 前記熱可塑性下塗層はポリアリールスルホンを含む、請求項1に記載の積層体。
- 前記熱可塑性下塗層と接触する基板を更に備える、請求項1に記載の積層体。
- 前記基板は、シリコンウエハである研削予定の基板を含む、請求項10に記載の積層体。
- 請求項10に記載の積層体を製造するための方法であって、
前記熱可塑性下塗層を前記基板の上にコーティングする工程と、
所望により、前記コーティングが溶媒を含む場合に前記熱可塑性下塗層を乾燥させる工程と、
前記接合層を前記熱可塑性下塗層の上にコーティングする工程と、
所望により、前記接合層を硬化させる工程と、
前記光透過性支持体の上に前記潜在剥離層をコーティングする工程と、
前記潜在剥離層を前記接合層に積層する工程と、を含む方法。 - 請求項10に記載の積層体を製造するための方法であって、
前記熱可塑性下塗層を前記光透過性支持体の上にコーティングする工程と、
所望により、前記コーティングが溶媒を含む場合に前記熱可塑性下塗層を乾燥させる工程と、
前記接合層を前記熱可塑性下塗層の上にコーティングする工程と、
所望により、前記接合層を硬化させる工程と、
前記基板の上に前記潜在剥離層をコーティングする工程と、
前記潜在剥離層を前記接合層に積層する工程と、を含む方法。 - 前記基板を加工する工程と、
前記光透過性支持体を通じて前記光熱変換層に照射して、前記光熱変換層を分解させ、それによって前記基板と前記光透過性支持体とを分離する工程と、
前記接合層を前記基板から引き剥がす工程と、
前記熱可塑性下塗層を基板から除去する工程と、を更に含む、請求項12又は13に記載の積層体を製造するための方法。 - 前記熱可塑性下塗層を除去する工程は、前記熱可塑性下塗層を溶媒で洗浄することを含む、請求項14に記載の積層体を製造するための方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261592148P | 2012-01-30 | 2012-01-30 | |
US61/592,148 | 2012-01-30 | ||
US201261616568P | 2012-03-28 | 2012-03-28 | |
US61/616,568 | 2012-03-28 | ||
PCT/US2013/022844 WO2013116071A1 (en) | 2012-01-30 | 2013-01-24 | Apparatus, hybrid laminated body, method, and materials for temporary substrate support |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015513211A true JP2015513211A (ja) | 2015-04-30 |
JP2015513211A5 JP2015513211A5 (ja) | 2016-03-03 |
Family
ID=48905714
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014554808A Pending JP2015513211A (ja) | 2012-01-30 | 2013-01-24 | 一時的な基板支持のための装置、複合積層体、方法、及び材料 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20150017434A1 (ja) |
EP (1) | EP2810300A4 (ja) |
JP (1) | JP2015513211A (ja) |
KR (1) | KR20140128355A (ja) |
TW (1) | TW201338104A (ja) |
WO (1) | WO2013116071A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017022213A (ja) * | 2015-07-08 | 2017-01-26 | 凸版印刷株式会社 | プリント配線基板 |
JP2017084910A (ja) * | 2015-10-26 | 2017-05-18 | 東京応化工業株式会社 | 支持体分離方法 |
WO2018062467A1 (ja) * | 2016-09-30 | 2018-04-05 | ボンドテック株式会社 | 基板接合方法および基板接合装置 |
JP2021158303A (ja) * | 2020-03-30 | 2021-10-07 | 株式会社ディスコ | レーザー加工装置 |
WO2023243488A1 (ja) * | 2022-06-13 | 2023-12-21 | 日東電工株式会社 | 電子部品仮固定用粘接着シート |
KR20240016994A (ko) | 2021-06-03 | 2024-02-06 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 방법 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ITTO20120854A1 (it) * | 2012-09-28 | 2014-03-29 | Stmicroelectronics Malta Ltd | Contenitore a montaggio superficiale perfezionato per un dispositivo integrato a semiconduttori, relativo assemblaggio e procedimento di fabbricazione |
JP6193813B2 (ja) * | 2014-06-10 | 2017-09-06 | 信越化学工業株式会社 | ウエハ加工用仮接着材料、ウエハ加工体及びこれらを使用する薄型ウエハの製造方法 |
JP6486735B2 (ja) * | 2015-03-17 | 2019-03-20 | 東芝メモリ株式会社 | 半導体製造方法および半導体製造装置 |
US11830756B2 (en) * | 2020-04-29 | 2023-11-28 | Semiconductor Components Industries, Llc | Temporary die support structures and related methods |
JP6463664B2 (ja) | 2015-11-27 | 2019-02-06 | 信越化学工業株式会社 | ウエハ加工体及びウエハ加工方法 |
JP6255500B1 (ja) * | 2016-03-09 | 2017-12-27 | 技術研究組合次世代3D積層造形技術総合開発機構 | 3次元積層造形システム、3次元積層造形方法、積層造形制御装置およびその制御方法と制御プログラム |
WO2019106846A1 (ja) * | 2017-12-01 | 2019-06-06 | 日立化成株式会社 | 半導体装置の製造方法、仮固定材用樹脂組成物、及び仮固定材用積層フィルム |
KR102680045B1 (ko) * | 2019-12-09 | 2024-06-28 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 접착 필름 |
KR20220007203A (ko) | 2020-07-10 | 2022-01-18 | 삼성전자주식회사 | 반도체 패키지 제조 방법 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0697017A (ja) * | 1992-09-16 | 1994-04-08 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2004064040A (ja) * | 2002-06-03 | 2004-02-26 | Three M Innovative Properties Co | 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置 |
US20050221598A1 (en) * | 2004-03-31 | 2005-10-06 | Daoqiang Lu | Wafer support and release in wafer processing |
JP2008060255A (ja) * | 2006-08-30 | 2008-03-13 | Teoss Corp | 半導体ウエーハの加工方法 |
JP2010056409A (ja) * | 2008-08-29 | 2010-03-11 | Hitachi Chem Co Ltd | 半導体ウェハ加工用接着フィルム |
JP2010109324A (ja) * | 2008-10-03 | 2010-05-13 | Tokyo Ohka Kogyo Co Ltd | 剥離方法、基板の接着剤、および基板を含む積層体 |
WO2010121068A2 (en) * | 2009-04-16 | 2010-10-21 | Suss Microtec, Inc. | Improved apparatus for temporary wafer bonding and debonding |
WO2012057893A2 (en) * | 2010-08-06 | 2012-05-03 | Brewer Science Inc. | Multiple bonding layers for thin-wafer handling |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE754264A (fr) * | 1969-08-04 | 1971-02-01 | Uniroyal Inc | Resine de polyarylsulfone thermoplastique |
US4231910A (en) * | 1979-02-08 | 1980-11-04 | Dow Corning Corporation | Primer composition |
US5372883A (en) * | 1990-03-20 | 1994-12-13 | Staystik, Inc. | Die attach adhesive film, application method and devices incorporating the same |
US5061549A (en) * | 1990-03-20 | 1991-10-29 | Shores A Andrew | Substrate attach adhesive film, application method and devices incorporating the same |
EP0571649A1 (en) * | 1992-05-26 | 1993-12-01 | Nitto Denko Corporation | Dicing-die bonding film and use thereof in a process for producing chips |
US5476566A (en) * | 1992-09-02 | 1995-12-19 | Motorola, Inc. | Method for thinning a semiconductor wafer |
JPH1126733A (ja) * | 1997-07-03 | 1999-01-29 | Seiko Epson Corp | 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置,アクティブマトリクス基板、液晶表示装置および電子機器 |
US6828217B2 (en) * | 2002-10-31 | 2004-12-07 | Northrop Grumman Corporation | Dicing process for GAAS/INP and other semiconductor materials |
CN1823425A (zh) * | 2003-07-10 | 2006-08-23 | 松下电器产业株式会社 | 有机薄膜晶体管及其制造方法、以及使用了它的有源矩阵型显示器和无线识别标签 |
JP4405246B2 (ja) * | 2003-11-27 | 2010-01-27 | スリーエム イノベイティブ プロパティズ カンパニー | 半導体チップの製造方法 |
JP2006049800A (ja) * | 2004-03-10 | 2006-02-16 | Seiko Epson Corp | 薄膜デバイスの供給体、薄膜デバイスの供給体の製造方法、転写方法、半導体装置の製造方法及び電子機器 |
JP4443962B2 (ja) * | 2004-03-17 | 2010-03-31 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
US7232740B1 (en) * | 2005-05-16 | 2007-06-19 | The United States Of America As Represented By The National Security Agency | Method for bumping a thin wafer |
US20080014532A1 (en) * | 2006-07-14 | 2008-01-17 | 3M Innovative Properties Company | Laminate body, and method for manufacturing thin substrate using the laminate body |
US7838391B2 (en) * | 2007-05-07 | 2010-11-23 | Stats Chippac, Ltd. | Ultra thin bumped wafer with under-film |
US20090017248A1 (en) * | 2007-07-13 | 2009-01-15 | 3M Innovative Properties Company | Layered body and method for manufacturing thin substrate using the layered body |
US20090017323A1 (en) * | 2007-07-13 | 2009-01-15 | 3M Innovative Properties Company | Layered body and method for manufacturing thin substrate using the layered body |
SG179209A1 (en) * | 2009-09-16 | 2012-05-30 | Brewer Science Inc | Scratch-resistant coatings for protecting front-side circuitry during backside processing |
JP5257314B2 (ja) * | 2009-09-29 | 2013-08-07 | 大日本印刷株式会社 | 積層体、準備用支持体、積層体の製造方法、及びデバイスの製造方法 |
EP2828883B1 (en) * | 2012-03-20 | 2019-07-31 | 3M Innovative Properties Company | Laminate body and method of making the same for temporary substrate support |
-
2013
- 2013-01-24 US US14/373,953 patent/US20150017434A1/en not_active Abandoned
- 2013-01-24 KR KR20147023802A patent/KR20140128355A/ko not_active Application Discontinuation
- 2013-01-24 WO PCT/US2013/022844 patent/WO2013116071A1/en active Application Filing
- 2013-01-24 EP EP13743946.9A patent/EP2810300A4/en not_active Withdrawn
- 2013-01-24 JP JP2014554808A patent/JP2015513211A/ja active Pending
- 2013-01-29 TW TW102103331A patent/TW201338104A/zh unknown
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0697017A (ja) * | 1992-09-16 | 1994-04-08 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2004064040A (ja) * | 2002-06-03 | 2004-02-26 | Three M Innovative Properties Co | 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置 |
US20050221598A1 (en) * | 2004-03-31 | 2005-10-06 | Daoqiang Lu | Wafer support and release in wafer processing |
JP2008060255A (ja) * | 2006-08-30 | 2008-03-13 | Teoss Corp | 半導体ウエーハの加工方法 |
JP2010056409A (ja) * | 2008-08-29 | 2010-03-11 | Hitachi Chem Co Ltd | 半導体ウェハ加工用接着フィルム |
JP2010109324A (ja) * | 2008-10-03 | 2010-05-13 | Tokyo Ohka Kogyo Co Ltd | 剥離方法、基板の接着剤、および基板を含む積層体 |
WO2010121068A2 (en) * | 2009-04-16 | 2010-10-21 | Suss Microtec, Inc. | Improved apparatus for temporary wafer bonding and debonding |
WO2012057893A2 (en) * | 2010-08-06 | 2012-05-03 | Brewer Science Inc. | Multiple bonding layers for thin-wafer handling |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017022213A (ja) * | 2015-07-08 | 2017-01-26 | 凸版印刷株式会社 | プリント配線基板 |
JP2017084910A (ja) * | 2015-10-26 | 2017-05-18 | 東京応化工業株式会社 | 支持体分離方法 |
TWI720004B (zh) * | 2015-10-26 | 2021-03-01 | 日商東京應化工業股份有限公司 | 支撐體分離方法 |
WO2018062467A1 (ja) * | 2016-09-30 | 2018-04-05 | ボンドテック株式会社 | 基板接合方法および基板接合装置 |
JPWO2018062467A1 (ja) * | 2016-09-30 | 2018-09-27 | ボンドテック株式会社 | 基板接合方法および基板接合装置 |
TWI732048B (zh) * | 2016-09-30 | 2021-07-01 | 日商邦德科技股份有限公司 | 基板接合方法及基板接合裝置 |
JP2021158303A (ja) * | 2020-03-30 | 2021-10-07 | 株式会社ディスコ | レーザー加工装置 |
JP7523932B2 (ja) | 2020-03-30 | 2024-07-29 | 株式会社ディスコ | レーザー加工装置 |
KR20240016994A (ko) | 2021-06-03 | 2024-02-06 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 방법 |
WO2023243488A1 (ja) * | 2022-06-13 | 2023-12-21 | 日東電工株式会社 | 電子部品仮固定用粘接着シート |
Also Published As
Publication number | Publication date |
---|---|
KR20140128355A (ko) | 2014-11-05 |
EP2810300A4 (en) | 2016-05-11 |
WO2013116071A1 (en) | 2013-08-08 |
US20150017434A1 (en) | 2015-01-15 |
TW201338104A (zh) | 2013-09-16 |
EP2810300A1 (en) | 2014-12-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2015513211A (ja) | 一時的な基板支持のための装置、複合積層体、方法、及び材料 | |
JP4565804B2 (ja) | 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置 | |
JP5048707B2 (ja) | 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置 | |
JP4405246B2 (ja) | 半導体チップの製造方法 | |
US7534498B2 (en) | Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body | |
US9184083B2 (en) | Apparatus, hybrid laminated body, method and materials for temporary substrate support | |
US20090017323A1 (en) | Layered body and method for manufacturing thin substrate using the layered body | |
US20090017248A1 (en) | Layered body and method for manufacturing thin substrate using the layered body | |
WO2022118479A1 (ja) | 半導体装置の製造方法 | |
WO2022118480A1 (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160114 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160114 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161101 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170201 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170411 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20171107 |