JP6484756B2 - 半導体装置の作製方法、及びフレキシブルデバイスの作製方法 - Google Patents
半導体装置の作製方法、及びフレキシブルデバイスの作製方法 Download PDFInfo
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- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/351—Working by laser beam, e.g. welding, cutting or boring for trimming or tuning of electrical components
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
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- B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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Description
本実施の形態では、本発明の一態様の剥離方法及びフレキシブルデバイスの作製方法について説明する。
まず、作製基板14上に、シリコン層25を形成する(図1(A))。
まず、作製方法例1Aと同様に、作製基板14上に、シリコン層25から絶縁層35までを順に形成する(図6(A))。
次に、トランジスタに酸化物半導体が適用され、カラーフィルタ方式が適用された表示装置を作製する場合を例に挙げて説明する。以下では、図7〜図13を用いて、本発明の一態様のフレキシブルデバイス及びその作製方法について、具体的に説明する。
本発明の一態様を適用して、ボトムエミッション型の表示装置を作製することができる。
図13(B)に示す表示装置は、トランジスタ80が、導電層81及び絶縁層82を有さない点で、図12(B)に示す表示装置と異なる。
本実施の形態では、本発明の一態様の剥離方法及びフレキシブルデバイスの作製方法について説明する。
まず、作製基板14上に、島状のシリコン層25を形成する(図14(A))。
まず、作製方法例1Bと同様に、作製基板14上に、シリコン層25から絶縁層35までを順に形成する(図18(A))。
次に、トランジスタに酸化物半導体が適用され、カラーフィルタ方式が適用された表示装置を作製する場合を例に挙げて説明する。以下では、図19〜図25を用いて、本発明の一態様のフレキシブルデバイス及びその作製方法について、具体的に説明する。
本発明の一態様を適用して、ボトムエミッション型の表示装置を作製することができる。
図25(B)に示す表示装置は、トランジスタ80が、導電層81及び絶縁層82を有さない点で、図24(B)に示す表示装置と異なる。
本実施の形態では、本発明の一態様を用いて作製することができる表示モジュール及び電子機器について、図26及び図27を用いて説明する。
13 接着層
14 作製基板
22 基板
23 樹脂層
23a 樹脂層
24 第1の層
25 シリコン層
25a シリコン層
28 接着層
29 基板
31 絶縁層
32 絶縁層
33 絶縁層
34 絶縁層
35 絶縁層
40 トランジスタ
41 導電層
43a 導電層
43b 導電層
43c 導電層
44 酸化物半導体層
45 導電層
50 トランジスタ
60 表示素子
61 導電層
62 EL層
63 導電層
65 レーザ光
71 保護層
74 絶縁層
75 保護層
75a 基板
75b 接着層
76 接続体
77 FPC
80 トランジスタ
81 導電層
82 絶縁層
83 酸化物半導体層
84 絶縁層
85 導電層
86a 導電層
86b 導電層
86c 導電層
91 作製基板
93 樹脂層
95 絶縁層
97 着色層
98 遮光層
99 接着層
381 表示部
382 駆動回路部
7000 表示部
7001 表示部
7101 筐体
7103 操作ボタン
7104 外部接続ポート
7105 スピーカ
7106 マイク
7107 カメラ
7110 携帯電話機
7201 筐体
7202 操作ボタン
7203 情報
7210 携帯情報端末
7300 テレビジョン装置
7301 筐体
7303 スタンド
7311 リモコン操作機
7650 携帯情報端末
7651 非表示部
7800 携帯情報端末
7801 バンド
7802 入出力端子
7803 操作ボタン
7804 アイコン
7805 バッテリ
8000 表示モジュール
8001 上部カバー
8002 下部カバー
8003 FPC
8004 タッチパネル
8005 FPC
8006 表示パネル
8009 フレーム
8010 プリント基板
8011 バッテリ
Claims (14)
- 基板上に、光が照射されることで水素を放出するよう構成されているシリコン層を形成し、
前記シリコン層上に、感光性を有する樹脂層を形成し、
前記樹脂層に、開口を形成し、
前記樹脂層上に、トランジスタを形成し、
前記樹脂層の前記開口に、導電層を形成し、
レーザ光を前記基板側から前記シリコン層へ照射し、
少なくとも前記トランジスタと前記基板とを分離する、半導体装置の作製方法。 - 基板上に、光が照射されることで水素を放出するよう構成されているシリコン層を形成し、
前記シリコン層上に、感光性を有する樹脂層を形成し、
前記樹脂層に、開口を形成し、
前記樹脂層上に、トランジスタを形成し、
前記樹脂層の前記開口に、導電層を形成し、
レーザ光を前記基板側から前記シリコン層及び前記樹脂層へ照射し、
少なくとも前記トランジスタと前記基板とを分離する、半導体装置の作製方法。 - 基板上に、シリコン層を形成し、
前記シリコン層上に、樹脂層を形成し、
前記樹脂層に、開口を形成し、
前記樹脂層上に、トランジスタを形成し、
前記樹脂層の前記開口に、導電層を形成し、
レーザ光を前記基板側から前記シリコン層へ照射し、
少なくとも前記トランジスタと前記基板とを分離する、半導体装置の作製方法。 - 基板上に、シリコン層を形成し、
前記シリコン層上に、樹脂層を形成し、
前記樹脂層に、開口を形成し、
前記樹脂層上に、トランジスタを形成し、
前記樹脂層の前記開口に、導電層を形成し、
レーザ光を前記基板側から前記シリコン層及び前記樹脂層へ照射し、
少なくとも前記トランジスタと前記基板とを分離する、半導体装置の作製方法。 - 請求項1乃至請求項4のいずれか一において、
前記樹脂層の厚みは、前記シリコン層の厚みより大きい、半導体装置の作製方法。 - 請求項1乃至請求項5のいずれか一において、
前記レーザ光は、線状レーザ光である、半導体装置の作製方法。 - 請求項1乃至請求項6のいずれか一において、
前記導電層は、前記トランジスタが有するソース電極又はドレイン電極と同一の材料を有する、半導体装置の作製方法。 - 請求項1乃至請求項7のいずれか一において、
前記樹脂層は、粘度が5cP以上100cP未満の溶液を用いて形成される、半導体装置の作製方法。 - 請求項1乃至請求項8のいずれか一において、
前記樹脂層は、熱硬化性を有する、半導体装置の作製方法。 - 請求項1乃至請求項9のいずれか一において、
前記樹脂層は、第1の温度で加熱する工程を経て形成され、
前記トランジスタは、前記第1の温度よりも低い温度で形成される、半導体装置の作製方法。 - 請求項1乃至請求項10のいずれか一において、
前記樹脂層の厚さは、0.1μm以上3μm以下である、半導体装置の作製方法。 - 請求項1乃至請求項11のいずれか一に記載の半導体装置の作製方法を用いて、前記トランジスタと前記基板とを分離した後に、前記導電層を露出し、
前記露出した導電層とFPCとを電気的に接続する、フレキシブルデバイスの作製方法。 - 請求項1乃至請求項11のいずれか一に記載の半導体装置の作製方法を用いて、前記トランジスタと前記基板とを分離した後に、前記シリコン層を露出し、
前記シリコン層を除去して、前記導電層を露出し、
前記露出した導電層とFPCとを電気的に接続する、フレキシブルデバイスの作製方法。 - 請求項1乃至請求項11のいずれか一に記載の半導体装置の作製方法を用いて、前記トランジスタと前記基板とを分離した後に、前記シリコン層を露出し、
前記露出したシリコン層とFPCとを電気的に接続する、フレキシブルデバイスの作製方法。
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