JP6965010B2 - フレキシブルデバイスの作製方法 - Google Patents
フレキシブルデバイスの作製方法 Download PDFInfo
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- JP6965010B2 JP6965010B2 JP2017074288A JP2017074288A JP6965010B2 JP 6965010 B2 JP6965010 B2 JP 6965010B2 JP 2017074288 A JP2017074288 A JP 2017074288A JP 2017074288 A JP2017074288 A JP 2017074288A JP 6965010 B2 JP6965010 B2 JP 6965010B2
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- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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Description
本実施の形態では、本発明の一態様の剥離方法及びフレキシブルデバイスの作製方法について説明する。
まず、作製基板14上に、酸化物層21を形成する(図1(A))。
まず、作製方法例1Aと同様に、作製基板14上に、酸化物層21から絶縁層35までを順に形成する(図6(A))。
次に、トランジスタに酸化物半導体が適用され、カラーフィルタ方式が適用された表示装置を作製する場合を例に挙げて説明する。以下では、図7〜図13を用いて、本発明の一態様のフレキシブルデバイス及びその作製方法について、具体的に説明する。
本発明の一態様を適用して、ボトムエミッション型の表示装置を作製することができる。
図13(B)に示す表示装置は、トランジスタ80が、導電層81及び絶縁層82を有さない点で、図12(B)に示す表示装置と異なる。
本実施の形態では、本発明の一態様の剥離方法及びフレキシブルデバイスの作製方法について説明する。
まず、作製基板14上に、島状の酸化物層21を形成する(図14(A))。
まず、作製方法例1Bと同様に、作製基板14上に、酸化物層21から絶縁層35までを順に形成する(図18(A))。
次に、トランジスタに酸化物半導体が適用され、カラーフィルタ方式が適用された表示装置を作製する場合を例に挙げて説明する。以下では、図19〜図25を用いて、本発明の一態様のフレキシブルデバイス及びその作製方法について、具体的に説明する。
次に、作製基板14の酸化物層21等が形成されている面と、作製基板91の樹脂層93等が形成されている面と、接着層99を用いて貼り合わせる(図20(C))。
本発明の一態様を適用して、ボトムエミッション型の表示装置を作製することができる。
図25(B)に示す表示装置は、トランジスタ80が、導電層81及び絶縁層82を有さない点で、図24(B)に示す表示装置と異なる。
本実施の形態では、本発明の一態様を用いて作製することができる表示モジュール及び電子機器について、図26及び図27を用いて説明する。
13 接着層
14 作製基板
21 酸化物層
21a 酸化物層
22 基板
23 樹脂層
23a 樹脂層
24 第1の層
28 接着層
29 基板
31 絶縁層
32 絶縁層
33 絶縁層
34 絶縁層
35 絶縁層
40 トランジスタ
41 導電層
43a 導電層
43b 導電層
43c 導電層
44 酸化物半導体層
45 導電層
50 トランジスタ
60 表示素子
61 導電層
62 EL層
63 導電層
65 レーザ光
71 保護層
74 絶縁層
75 保護層
75a 基板
75b 接着層
76 接続体
77 FPC
80 トランジスタ
81 導電層
82 絶縁層
83 酸化物半導体層
84 絶縁層
85 導電層
86a 導電層
86b 導電層
86c 導電層
91 作製基板
93 樹脂層
95 絶縁層
97 着色層
98 遮光層
99 接着層
381 表示部
382 駆動回路部
7000 表示部
7001 表示部
7101 筐体
7103 操作ボタン
7104 外部接続ポート
7105 スピーカ
7106 マイク
7107 カメラ
7110 携帯電話機
7201 筐体
7202 操作ボタン
7203 情報
7210 携帯情報端末
7300 テレビジョン装置
7301 筐体
7303 スタンド
7311 リモコン操作機
7650 携帯情報端末
7651 非表示部
7800 携帯情報端末
7801 バンド
7802 入出力端子
7803 操作ボタン
7804 アイコン
7805 バッテリ
8000 表示モジュール
8001 上部カバー
8002 下部カバー
8003 FPC
8004 タッチパネル
8005 FPC
8006 表示パネル
8009 フレーム
8010 プリント基板
8011 バッテリ
Claims (3)
- 基板上に、酸化物半導体層または酸化物導電層からなる島状の酸化物層を形成し、
前記島状の酸化物層上に、前記島状の酸化物層と重なる開口を有する樹脂層を形成し、
前記樹脂層上に、トランジスタと、前記樹脂層の開口内において前記島状の酸化物層と接する導電層と、を形成し、
レーザを用いて、前記島状の酸化物層に光を照射し、
前記トランジスタと前記基板とを分離することで、前記導電層を露出させ、
前記導電層の露出した領域において、前記導電層と回路基板とを電気的に接続する、フレキシブルデバイスの作製方法。 - 請求項1において、
前記島状の酸化物層が除去されることによって、前記樹脂層中の前記回路基板が配置される側から前記導電層に達する開口部が形成される、フレキシブルデバイスの作製方法。 - 請求項1または請求項2において、
膜状の酸化物層を形成した後、
前記膜状の酸化物層に、希ガス、水素、ボロン、リン、及び窒素の中から選ばれた一種以上を含むガスを用いてプラズマ処理を行い、
前記プラズマ処理を行った前記膜状の酸化物層を加工して、前記島状の酸化物層を形成する、フレキシブルデバイスの作製方法。
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