CN1589479A - 铁电或驻极体存储电路 - Google Patents
铁电或驻极体存储电路 Download PDFInfo
- Publication number
- CN1589479A CN1589479A CNA028232593A CN02823259A CN1589479A CN 1589479 A CN1589479 A CN 1589479A CN A028232593 A CNA028232593 A CN A028232593A CN 02823259 A CN02823259 A CN 02823259A CN 1589479 A CN1589479 A CN 1589479A
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- Prior art keywords
- electrode
- ferroelectric
- memory circuit
- electret
- storage medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
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Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
Claims (24)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NO20015735 | 2001-11-23 | ||
NO20015735A NO20015735D0 (no) | 2001-11-23 | 2001-11-23 | Barrierelag |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1589479A true CN1589479A (zh) | 2005-03-02 |
CN100449640C CN100449640C (zh) | 2009-01-07 |
Family
ID=19913059
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028232593A Expired - Fee Related CN100449640C (zh) | 2001-11-23 | 2002-11-22 | 铁电或驻极体存储电路 |
Country Status (12)
Country | Link |
---|---|
EP (1) | EP1446806B1 (zh) |
JP (1) | JP2005510078A (zh) |
KR (1) | KR100603670B1 (zh) |
CN (1) | CN100449640C (zh) |
AT (1) | ATE291273T1 (zh) |
AU (1) | AU2002366187B2 (zh) |
CA (1) | CA2464082C (zh) |
DE (1) | DE60203321T2 (zh) |
ES (1) | ES2238638T3 (zh) |
NO (1) | NO20015735D0 (zh) |
RU (1) | RU2269830C1 (zh) |
WO (1) | WO2003044801A1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101336490B (zh) * | 2006-02-09 | 2011-08-17 | 株式会社日立制作所 | 半导体器件及其制造方法 |
CN102317066B (zh) * | 2008-12-13 | 2015-06-03 | 拜尔材料科学股份公司 | 铁电驻极体两层和更多层复合材料及其生产方法 |
CN108292630A (zh) * | 2015-11-25 | 2018-07-17 | 东丽株式会社 | 铁电体存储元件、其制造方法、以及使用其的存储单元及使用其的无线通信装置 |
CN110265400A (zh) * | 2014-05-20 | 2019-09-20 | 美光科技公司 | 铁电装置及其形成方法 |
CN111403417A (zh) * | 2020-03-25 | 2020-07-10 | 无锡拍字节科技有限公司 | 一种存储器件的结构及其制造方法 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0404985B1 (de) * | 1989-06-29 | 1993-01-13 | Siemens Aktiengesellschaft | Schaltungsanordnung zur Identifikation integrierter Halbleiterschaltkreise |
JP2005083961A (ja) * | 2003-09-10 | 2005-03-31 | ▲高▼木 敏行 | 歪センサー |
NO321555B1 (no) * | 2004-03-26 | 2006-05-29 | Thin Film Electronics Asa | Organisk elektronisk innretning og fremgangsmate til fremstilling av en slik innretning |
US7205595B2 (en) * | 2004-03-31 | 2007-04-17 | Intel Corporation | Polymer memory device with electron traps |
NO20041733L (no) * | 2004-04-28 | 2005-10-31 | Thin Film Electronics Asa | Organisk elektronisk krets med funksjonelt mellomsjikt og fremgangsmate til dens fremstilling. |
NO321280B1 (no) | 2004-07-22 | 2006-04-18 | Thin Film Electronics Asa | Organisk, elektronisk krets og fremgangsmate til dens fremstilling |
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- 2002-11-22 KR KR1020047005847A patent/KR100603670B1/ko not_active IP Right Cessation
- 2002-11-22 ES ES02803576T patent/ES2238638T3/es not_active Expired - Lifetime
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Cited By (6)
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CN101336490B (zh) * | 2006-02-09 | 2011-08-17 | 株式会社日立制作所 | 半导体器件及其制造方法 |
CN102317066B (zh) * | 2008-12-13 | 2015-06-03 | 拜尔材料科学股份公司 | 铁电驻极体两层和更多层复合材料及其生产方法 |
CN110265400A (zh) * | 2014-05-20 | 2019-09-20 | 美光科技公司 | 铁电装置及其形成方法 |
CN108292630A (zh) * | 2015-11-25 | 2018-07-17 | 东丽株式会社 | 铁电体存储元件、其制造方法、以及使用其的存储单元及使用其的无线通信装置 |
CN111403417A (zh) * | 2020-03-25 | 2020-07-10 | 无锡拍字节科技有限公司 | 一种存储器件的结构及其制造方法 |
CN111403417B (zh) * | 2020-03-25 | 2023-06-16 | 无锡舜铭存储科技有限公司 | 一种存储器件的结构及其制造方法 |
Also Published As
Publication number | Publication date |
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KR100603670B1 (ko) | 2006-07-20 |
DE60203321D1 (de) | 2005-04-21 |
RU2269830C1 (ru) | 2006-02-10 |
ES2238638T3 (es) | 2005-09-01 |
EP1446806A1 (en) | 2004-08-18 |
JP2005510078A (ja) | 2005-04-14 |
RU2004117774A (ru) | 2006-01-10 |
KR20040051614A (ko) | 2004-06-18 |
AU2002366187B2 (en) | 2006-07-13 |
EP1446806B1 (en) | 2005-03-16 |
AU2002366187A1 (en) | 2003-06-10 |
CN100449640C (zh) | 2009-01-07 |
NO20015735D0 (no) | 2001-11-23 |
ATE291273T1 (de) | 2005-04-15 |
DE60203321T2 (de) | 2006-02-02 |
CA2464082C (en) | 2007-03-27 |
WO2003044801A1 (en) | 2003-05-30 |
CA2464082A1 (en) | 2003-05-30 |
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