CN1535300A - 硅氧烷树脂 - Google Patents

硅氧烷树脂 Download PDF

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Publication number
CN1535300A
CN1535300A CNA028146980A CN02814698A CN1535300A CN 1535300 A CN1535300 A CN 1535300A CN A028146980 A CNA028146980 A CN A028146980A CN 02814698 A CN02814698 A CN 02814698A CN 1535300 A CN1535300 A CN 1535300A
Authority
CN
China
Prior art keywords
sio
silicone resin
resin
unit
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA028146980A
Other languages
English (en)
Chinese (zh)
Inventor
R
R·波斯沃特
D·布亚尔斯克
K·苏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of CN1535300A publication Critical patent/CN1535300A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249967—Inorganic matrix in void-containing component
    • Y10T428/249969—Of silicon-containing material [e.g., glass, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249987—With nonvoid component of specified composition
    • Y10T428/24999—Inorganic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Silicon Polymers (AREA)
  • Paints Or Removers (AREA)
  • Formation Of Insulating Films (AREA)
CNA028146980A 2001-07-26 2002-07-16 硅氧烷树脂 Pending CN1535300A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/915,902 US6872456B2 (en) 2001-07-26 2001-07-26 Siloxane resins
US09/915,902 2001-07-26

Publications (1)

Publication Number Publication Date
CN1535300A true CN1535300A (zh) 2004-10-06

Family

ID=25436405

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA028146980A Pending CN1535300A (zh) 2001-07-26 2002-07-16 硅氧烷树脂

Country Status (9)

Country Link
US (1) US6872456B2 (https=)
EP (1) EP1412434B1 (https=)
JP (1) JP4411067B2 (https=)
KR (1) KR20040023683A (https=)
CN (1) CN1535300A (https=)
AT (1) ATE399822T1 (https=)
DE (1) DE60227373D1 (https=)
TW (1) TW593548B (https=)
WO (1) WO2003010246A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100481404C (zh) * 2004-10-20 2009-04-22 住友电木株式会社 半导体晶片及半导体装置
CN101945880A (zh) * 2008-02-20 2011-01-12 瓦克化学股份公司 可固化聚合物混合物
CN101048704B (zh) * 2004-11-02 2011-04-13 陶氏康宁公司 抗蚀剂组合物
CN101501139B (zh) * 2006-08-04 2011-08-17 陶氏康宁公司 硅氧烷树脂和硅氧烷组合物
CN103534296A (zh) * 2011-05-11 2014-01-22 汉高股份有限公司 具有改善的阻隔性的聚硅氧烷树脂

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7404990B2 (en) * 2002-11-14 2008-07-29 Air Products And Chemicals, Inc. Non-thermal process for forming porous low dielectric constant films
US6940173B2 (en) * 2003-01-29 2005-09-06 International Business Machines Corporation Interconnect structures incorporating low-k dielectric barrier films
TW200628981A (en) * 2004-09-29 2006-08-16 Sumitomo Bakelite Co Semiconductor device
TWI434891B (zh) * 2007-02-22 2014-04-21 賽倫斯股份有限公司 積體電路用高矽含量矽氧烷聚合物
EP2121808A1 (en) * 2007-02-27 2009-11-25 AZ Electronic Materials USA Corp. Silicon-based antifrelective coating compositions
US20100291475A1 (en) * 2009-05-12 2010-11-18 Chenghong Li Silicone Coating Compositions
US20110111239A1 (en) * 2009-11-10 2011-05-12 Hemant Dandekar Sol-gel coating for steel and cast iron substrates and methods of making and using same
CN109054560A (zh) * 2018-08-07 2018-12-21 常州工程职业技术学院 一种电工钢用绝缘涂料

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615272A (en) * 1968-11-04 1971-10-26 Dow Corning Condensed soluble hydrogensilsesquioxane resin
US3730743A (en) * 1970-08-24 1973-05-01 Stauffer Chemical Co Zinc dust coating composition
US3965136A (en) * 1975-09-24 1976-06-22 Olin Corporation Alkoxysilane cluster compounds and their preparation
US4329485A (en) * 1981-06-29 1982-05-11 Olin Corporation Process for preparing alkoxysilane cluster compounds by reacting a trialkoxysilanol with a triamidosilane
US4756977A (en) * 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
JP3134297B2 (ja) * 1990-08-29 2001-02-13 日立化成工業株式会社 シリカ系被膜形成用塗布液およびシリカ系被膜の製造法
JP2669988B2 (ja) * 1992-02-06 1997-10-29 沖電気工業株式会社 ポリ（アルコキシシロキサン）の製造方法
JP2726363B2 (ja) 1992-06-03 1998-03-11 沖電気工業株式会社 シリコーン樹脂及びこれを用いた組成物
JPH06326202A (ja) * 1993-03-16 1994-11-25 Showa Denko Kk 半導体及びその絶縁膜または平坦化膜の形成方法
TW257785B (https=) * 1993-05-17 1995-09-21 Dow Corning
JP2893104B2 (ja) * 1994-03-14 1999-05-17 直弘 曽我 有機官能基の結合した無機系多孔質体の製造方法
JP3445831B2 (ja) * 1994-06-28 2003-09-08 ジーイー東芝シリコーン株式会社 シリコーン樹脂組成物
JP3435325B2 (ja) * 1997-02-13 2003-08-11 株式会社東芝 低誘電率珪素酸化膜の形成方法
US6048804A (en) 1997-04-29 2000-04-11 Alliedsignal Inc. Process for producing nanoporous silica thin films
JPH1121510A (ja) * 1997-06-30 1999-01-26 Dow Corning Asia Ltd 撥水性被膜形成用シリコーンレジン及びその組成物
JP4025389B2 (ja) * 1997-07-15 2007-12-19 旭化成株式会社 有機−無機複合体および無機多孔質体
CA2289782C (en) 1997-07-15 2004-07-13 Asahi Kasei Kogyo Kabushiki Kaisha Alkoxysilane/organic polymer composition for use in producing an insulating thin film and use thereof
US6231989B1 (en) * 1998-11-20 2001-05-15 Dow Corning Corporation Method of forming coatings
JP3733824B2 (ja) * 1999-08-12 2006-01-11 Ｊｓｒ株式会社 シリカ系被膜形成用塗布液の製造方法
US6197913B1 (en) * 1999-08-26 2001-03-06 Dow Corning Corporation Method for making microporous silicone resins with narrow pore-size distributions
JP2001115021A (ja) * 1999-10-18 2001-04-24 Asahi Kasei Corp シリカ前駆体／有機ポリマー組成物
US6359096B1 (en) * 1999-10-25 2002-03-19 Dow Corning Corporation Silicone resin compositions having good solution solubility and stability
DE60025872T2 (de) 1999-10-25 2006-08-17 Dow Corning Corp., Midland Lösliche Siliconharzzusammensetzungen
US6232424B1 (en) * 1999-12-13 2001-05-15 Dow Corning Corporation Soluble silicone resin compositions having good solution stability
US6313045B1 (en) * 1999-12-13 2001-11-06 Dow Corning Corporation Nanoporous silicone resins having low dielectric constants and method for preparation
US6143360A (en) * 1999-12-13 2000-11-07 Dow Corning Corporation Method for making nanoporous silicone resins from alkylydridosiloxane resins

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100481404C (zh) * 2004-10-20 2009-04-22 住友电木株式会社 半导体晶片及半导体装置
CN101048704B (zh) * 2004-11-02 2011-04-13 陶氏康宁公司 抗蚀剂组合物
CN101501139B (zh) * 2006-08-04 2011-08-17 陶氏康宁公司 硅氧烷树脂和硅氧烷组合物
CN101945880A (zh) * 2008-02-20 2011-01-12 瓦克化学股份公司 可固化聚合物混合物
CN103534296A (zh) * 2011-05-11 2014-01-22 汉高股份有限公司 具有改善的阻隔性的聚硅氧烷树脂

Also Published As

Publication number Publication date
DE60227373D1 (de) 2008-08-14
US6872456B2 (en) 2005-03-29
EP1412434B1 (en) 2008-07-02
WO2003010246A1 (en) 2003-02-06
ATE399822T1 (de) 2008-07-15
TW593548B (en) 2004-06-21
KR20040023683A (ko) 2004-03-18
EP1412434A1 (en) 2004-04-28
JP4411067B2 (ja) 2010-02-10
JP2004536924A (ja) 2004-12-09
US20030087082A1 (en) 2003-05-08

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