KR20040023683A - 실록산 수지 - Google Patents
실록산 수지 Download PDFInfo
- Publication number
- KR20040023683A KR20040023683A KR10-2004-7001129A KR20047001129A KR20040023683A KR 20040023683 A KR20040023683 A KR 20040023683A KR 20047001129 A KR20047001129 A KR 20047001129A KR 20040023683 A KR20040023683 A KR 20040023683A
- Authority
- KR
- South Korea
- Prior art keywords
- siloxane
- sio
- units
- siloxane resin
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
- H10P14/665—Porous materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
- H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
- H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
- H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249967—Inorganic matrix in void-containing component
- Y10T428/249969—Of silicon-containing material [e.g., glass, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249987—With nonvoid component of specified composition
- Y10T428/24999—Inorganic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Silicon Polymers (AREA)
- Paints Or Removers (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/915,902 US6872456B2 (en) | 2001-07-26 | 2001-07-26 | Siloxane resins |
| US09/915,902 | 2001-07-26 | ||
| PCT/US2002/023152 WO2003010246A1 (en) | 2001-07-26 | 2002-07-16 | Siloxane resins |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20040023683A true KR20040023683A (ko) | 2004-03-18 |
Family
ID=25436405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2004-7001129A Withdrawn KR20040023683A (ko) | 2001-07-26 | 2002-07-16 | 실록산 수지 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6872456B2 (https=) |
| EP (1) | EP1412434B1 (https=) |
| JP (1) | JP4411067B2 (https=) |
| KR (1) | KR20040023683A (https=) |
| CN (1) | CN1535300A (https=) |
| AT (1) | ATE399822T1 (https=) |
| DE (1) | DE60227373D1 (https=) |
| TW (1) | TW593548B (https=) |
| WO (1) | WO2003010246A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090127140A (ko) * | 2007-02-22 | 2009-12-09 | 질렉스 오와이 | 집적 회로용의 실리콘 고함량 실록산 폴리머 |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7404990B2 (en) * | 2002-11-14 | 2008-07-29 | Air Products And Chemicals, Inc. | Non-thermal process for forming porous low dielectric constant films |
| US6940173B2 (en) * | 2003-01-29 | 2005-09-06 | International Business Machines Corporation | Interconnect structures incorporating low-k dielectric barrier films |
| TW200628981A (en) * | 2004-09-29 | 2006-08-16 | Sumitomo Bakelite Co | Semiconductor device |
| TW200619843A (en) * | 2004-10-20 | 2006-06-16 | Sumitomo Bakelite Co | Semiconductor wafer and semiconductor device |
| WO2006049720A1 (en) * | 2004-11-02 | 2006-05-11 | Dow Corning Corporation | Resist composition |
| KR20090034953A (ko) * | 2006-08-04 | 2009-04-08 | 다우 코닝 코포레이션 | 실리콘 수지 및 실리콘 조성물 |
| EP2121808A1 (en) * | 2007-02-27 | 2009-11-25 | AZ Electronic Materials USA Corp. | Silicon-based antifrelective coating compositions |
| DE102008000353A1 (de) * | 2008-02-20 | 2009-08-27 | Wacker Chemie Ag | Härtbare Polymerabmischungen |
| US20100291475A1 (en) * | 2009-05-12 | 2010-11-18 | Chenghong Li | Silicone Coating Compositions |
| US20110111239A1 (en) * | 2009-11-10 | 2011-05-12 | Hemant Dandekar | Sol-gel coating for steel and cast iron substrates and methods of making and using same |
| EP2707417A4 (en) * | 2011-05-11 | 2015-01-07 | Henkel China Co Ltd | SILICONE RESIN WITH IMPROVED BARRIER PROPERTIES |
| CN109054560A (zh) * | 2018-08-07 | 2018-12-21 | 常州工程职业技术学院 | 一种电工钢用绝缘涂料 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3615272A (en) * | 1968-11-04 | 1971-10-26 | Dow Corning | Condensed soluble hydrogensilsesquioxane resin |
| US3730743A (en) * | 1970-08-24 | 1973-05-01 | Stauffer Chemical Co | Zinc dust coating composition |
| US3965136A (en) * | 1975-09-24 | 1976-06-22 | Olin Corporation | Alkoxysilane cluster compounds and their preparation |
| US4329485A (en) * | 1981-06-29 | 1982-05-11 | Olin Corporation | Process for preparing alkoxysilane cluster compounds by reacting a trialkoxysilanol with a triamidosilane |
| US4756977A (en) * | 1986-12-03 | 1988-07-12 | Dow Corning Corporation | Multilayer ceramics from hydrogen silsesquioxane |
| JP3134297B2 (ja) * | 1990-08-29 | 2001-02-13 | 日立化成工業株式会社 | シリカ系被膜形成用塗布液およびシリカ系被膜の製造法 |
| JP2669988B2 (ja) * | 1992-02-06 | 1997-10-29 | 沖電気工業株式会社 | ポリ(アルコキシシロキサン)の製造方法 |
| JP2726363B2 (ja) | 1992-06-03 | 1998-03-11 | 沖電気工業株式会社 | シリコーン樹脂及びこれを用いた組成物 |
| JPH06326202A (ja) * | 1993-03-16 | 1994-11-25 | Showa Denko Kk | 半導体及びその絶縁膜または平坦化膜の形成方法 |
| TW257785B (https=) * | 1993-05-17 | 1995-09-21 | Dow Corning | |
| JP2893104B2 (ja) * | 1994-03-14 | 1999-05-17 | 直弘 曽我 | 有機官能基の結合した無機系多孔質体の製造方法 |
| JP3445831B2 (ja) * | 1994-06-28 | 2003-09-08 | ジーイー東芝シリコーン株式会社 | シリコーン樹脂組成物 |
| JP3435325B2 (ja) * | 1997-02-13 | 2003-08-11 | 株式会社東芝 | 低誘電率珪素酸化膜の形成方法 |
| US6048804A (en) | 1997-04-29 | 2000-04-11 | Alliedsignal Inc. | Process for producing nanoporous silica thin films |
| JPH1121510A (ja) * | 1997-06-30 | 1999-01-26 | Dow Corning Asia Ltd | 撥水性被膜形成用シリコーンレジン及びその組成物 |
| JP4025389B2 (ja) * | 1997-07-15 | 2007-12-19 | 旭化成株式会社 | 有機−無機複合体および無機多孔質体 |
| CA2289782C (en) | 1997-07-15 | 2004-07-13 | Asahi Kasei Kogyo Kabushiki Kaisha | Alkoxysilane/organic polymer composition for use in producing an insulating thin film and use thereof |
| US6231989B1 (en) * | 1998-11-20 | 2001-05-15 | Dow Corning Corporation | Method of forming coatings |
| JP3733824B2 (ja) * | 1999-08-12 | 2006-01-11 | Jsr株式会社 | シリカ系被膜形成用塗布液の製造方法 |
| US6197913B1 (en) * | 1999-08-26 | 2001-03-06 | Dow Corning Corporation | Method for making microporous silicone resins with narrow pore-size distributions |
| JP2001115021A (ja) * | 1999-10-18 | 2001-04-24 | Asahi Kasei Corp | シリカ前駆体/有機ポリマー組成物 |
| US6359096B1 (en) * | 1999-10-25 | 2002-03-19 | Dow Corning Corporation | Silicone resin compositions having good solution solubility and stability |
| DE60025872T2 (de) | 1999-10-25 | 2006-08-17 | Dow Corning Corp., Midland | Lösliche Siliconharzzusammensetzungen |
| US6232424B1 (en) * | 1999-12-13 | 2001-05-15 | Dow Corning Corporation | Soluble silicone resin compositions having good solution stability |
| US6313045B1 (en) * | 1999-12-13 | 2001-11-06 | Dow Corning Corporation | Nanoporous silicone resins having low dielectric constants and method for preparation |
| US6143360A (en) * | 1999-12-13 | 2000-11-07 | Dow Corning Corporation | Method for making nanoporous silicone resins from alkylydridosiloxane resins |
-
2001
- 2001-07-26 US US09/915,902 patent/US6872456B2/en not_active Expired - Fee Related
-
2002
- 2002-07-16 KR KR10-2004-7001129A patent/KR20040023683A/ko not_active Withdrawn
- 2002-07-16 DE DE60227373T patent/DE60227373D1/de not_active Expired - Lifetime
- 2002-07-16 EP EP20020750218 patent/EP1412434B1/en not_active Expired - Lifetime
- 2002-07-16 WO PCT/US2002/023152 patent/WO2003010246A1/en not_active Ceased
- 2002-07-16 AT AT02750218T patent/ATE399822T1/de not_active IP Right Cessation
- 2002-07-16 CN CNA028146980A patent/CN1535300A/zh active Pending
- 2002-07-16 JP JP2003515600A patent/JP4411067B2/ja not_active Expired - Fee Related
- 2002-07-26 TW TW91116734A patent/TW593548B/zh not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090127140A (ko) * | 2007-02-22 | 2009-12-09 | 질렉스 오와이 | 집적 회로용의 실리콘 고함량 실록산 폴리머 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE60227373D1 (de) | 2008-08-14 |
| US6872456B2 (en) | 2005-03-29 |
| EP1412434B1 (en) | 2008-07-02 |
| WO2003010246A1 (en) | 2003-02-06 |
| CN1535300A (zh) | 2004-10-06 |
| ATE399822T1 (de) | 2008-07-15 |
| TW593548B (en) | 2004-06-21 |
| EP1412434A1 (en) | 2004-04-28 |
| JP4411067B2 (ja) | 2010-02-10 |
| JP2004536924A (ja) | 2004-12-09 |
| US20030087082A1 (en) | 2003-05-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20040126 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |