CN1572816A - 硅氧烷基的树脂和使用其制造的半导体器件的层间绝缘膜 - Google Patents
硅氧烷基的树脂和使用其制造的半导体器件的层间绝缘膜 Download PDFInfo
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- CN1572816A CN1572816A CNA2004100474061A CN200410047406A CN1572816A CN 1572816 A CN1572816 A CN 1572816A CN A2004100474061 A CNA2004100474061 A CN A2004100474061A CN 200410047406 A CN200410047406 A CN 200410047406A CN 1572816 A CN1572816 A CN 1572816A
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- solvent
- siloxane
- based resin
- resin
- monomer
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- 239000011347 resin Substances 0.000 title claims abstract description 75
- 229920005989 resin Polymers 0.000 title claims abstract description 75
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 239000011229 interlayer Substances 0.000 title claims abstract description 11
- 239000004065 semiconductor Substances 0.000 title abstract description 4
- 239000010410 layer Substances 0.000 claims abstract description 10
- 239000000178 monomer Substances 0.000 claims description 35
- 239000002904 solvent Substances 0.000 claims description 26
- 239000011148 porous material Substances 0.000 claims description 19
- 239000003960 organic solvent Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 239000008199 coating composition Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 230000007062 hydrolysis Effects 0.000 claims description 9
- 238000006460 hydrolysis reaction Methods 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000006068 polycondensation reaction Methods 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical group Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical group CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 4
- 229920000858 Cyclodextrin Polymers 0.000 claims description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 4
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 239000005456 alcohol based solvent Substances 0.000 claims description 4
- 125000003368 amide group Chemical group 0.000 claims description 4
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims description 4
- 238000009998 heat setting Methods 0.000 claims description 4
- 239000005453 ketone based solvent Substances 0.000 claims description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 4
- 150000001338 aliphatic hydrocarbons Chemical group 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000003054 catalyst Substances 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 229920001610 polycaprolactone Polymers 0.000 claims description 3
- 239000004632 polycaprolactone Substances 0.000 claims description 3
- HFHDHCJBZVLPGP-UHFFFAOYSA-N schardinger α-dextrin Chemical group O1C(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(O)C2O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC2C(O)C(O)C1OC2CO HFHDHCJBZVLPGP-UHFFFAOYSA-N 0.000 claims description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 claims description 2
- 235000019253 formic acid Nutrition 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- 235000011118 potassium hydroxide Nutrition 0.000 claims description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 2
- 229910000030 sodium bicarbonate Inorganic materials 0.000 claims description 2
- 235000017557 sodium bicarbonate Nutrition 0.000 claims description 2
- 235000011121 sodium hydroxide Nutrition 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 9
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 28
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 14
- 239000000243 solution Substances 0.000 description 13
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 12
- -1 siloxanes Chemical class 0.000 description 11
- 238000000465 moulding Methods 0.000 description 10
- 238000002360 preparation method Methods 0.000 description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- 229910008051 Si-OH Inorganic materials 0.000 description 8
- 229910006358 Si—OH Inorganic materials 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000000706 filtrate Substances 0.000 description 8
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical group CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 6
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 6
- 238000001914 filtration Methods 0.000 description 6
- 238000005481 NMR spectroscopy Methods 0.000 description 5
- 230000006837 decompression Effects 0.000 description 5
- FYGHSUNMUKGBRK-UHFFFAOYSA-N 1,2,3-trimethylbenzene Chemical compound CC1=CC=CC(C)=C1C FYGHSUNMUKGBRK-UHFFFAOYSA-N 0.000 description 4
- 238000005160 1H NMR spectroscopy Methods 0.000 description 4
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical group CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 4
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000010790 dilution Methods 0.000 description 4
- 239000012895 dilution Substances 0.000 description 4
- 229940043265 methyl isobutyl ketone Drugs 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000011541 reaction mixture Substances 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- DMEXFOUCEOWRGD-UHFFFAOYSA-N chloro-[chloro(dimethyl)silyl]oxy-dimethylsilane Chemical compound C[Si](C)(Cl)O[Si](C)(C)Cl DMEXFOUCEOWRGD-UHFFFAOYSA-N 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
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- 238000005406 washing Methods 0.000 description 3
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical group CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical group CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical class CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229940043232 butyl acetate Drugs 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical group O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
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- 239000012530 fluid Substances 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
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- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical group CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 150000001282 organosilanes Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920000734 polysilsesquioxane polymer Polymers 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- SSUBAQORPAUJGD-UHFFFAOYSA-N 1-methylpyrrolidin-2-one;pyrrolidin-2-one Chemical compound O=C1CCCN1.CN1CCCC1=O SSUBAQORPAUJGD-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000001116 FEMA 4028 Substances 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- WHGYBXFWUBPSRW-FOUAGVGXSA-N beta-cyclodextrin Chemical compound OC[C@H]([C@H]([C@@H]([C@H]1O)O)O[C@H]2O[C@@H]([C@@H](O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O3)[C@H](O)[C@H]2O)CO)O[C@@H]1O[C@H]1[C@H](O)[C@@H](O)[C@@H]3O[C@@H]1CO WHGYBXFWUBPSRW-FOUAGVGXSA-N 0.000 description 1
- 235000011175 beta-cyclodextrine Nutrition 0.000 description 1
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- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
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- 238000007865 diluting Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 1
- 239000003361 porogen Substances 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052990 silicon hydride Inorganic materials 0.000 description 1
- 125000005401 siloxanyl group Chemical group 0.000 description 1
- 238000001577 simple distillation Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- RSNQKPMXXVDJFG-UHFFFAOYSA-N tetrasiloxane Chemical compound [SiH3]O[SiH2]O[SiH2]O[SiH3] RSNQKPMXXVDJFG-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
- C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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Abstract
本发明公开了一种具有新型结构的硅氧烷基树脂,以及用它形成的半导体器件的层间绝缘膜。该硅氧烷基树脂除了具有优异的机械性能、耐热性和耐裂性之外,还具有如此低的介电常数,以至于它们可用作半导体器件互连层之间的绝缘膜材料。
Description
按照35U.S.C.ξ119(a),本非临时申请要求2003年6月2日提交的韩国专利申请2003-35276号的优先权,其全部内容在此引入作为参考。
技术领域
本发明涉及一种硅氧烷基树脂和采用它制备的半导体器件的层间绝缘膜。更具体地,本发明涉及具有新型结构的硅氧烷基树脂和用作半导体器件互连层之间的绝缘膜的树脂膜。
背景技术
随着多层集成电路器件的电路密度的增加,不断地要求减小半导体器件的形体尺寸。减小半导体器件形体尺寸的主要障碍是R(电阻)×C(电容)延迟,由于互连层之间的交扰(crosstalk)。该问题的解决方案是降低层间绝缘膜的介电常数,以便尽量降低R×C延迟。所以,已经有多种提供低介电常数的绝缘膜的尝试。
传统上,在半导体器件领域,已经使用介电常数4.0的SiO2的CVD(化学汽相沉积)法形成了层间绝缘膜。但是,US 3615272、4399266、4756977和4999397公开了使用介电常数2.5~3.1,以及良好平坦化性质的聚倍半硅氧烷的SOD(旋涂沉积)法,形成绝缘膜。
聚倍半硅氧烷及其制备方法在本领域中是公知的。例如,US 3615272公开了完全缩合的,可溶的氢倍半硅氧烷树脂的制备方法,其包含在硫酸介质中缩合三氯硅烷和用水或硫酸水溶液洗涤得到的树脂的步骤。US 5010159也公开了合成可溶的、缩合的氢化硅树脂的方法,其包含在含有芳基磺酸水合物的水解介质中水解氢化硅烷以及使得到的树脂与中和剂接触的步骤。US6232424描述了具有卓越溶液稳定性的高可溶硅树脂组合物,其在水和催化剂存在下,通过四烷氧基硅烷、有机硅烷和有机三烷氧基硅烷单体的水解和缩聚而制备。US 6000339描述了二氧化硅基的化合物有助于改进涂层膜对氧等离子体的抵抗和物理性质以及厚度,可以在水和催化剂存在下,使选自烷氧基硅烷、含氟烷氧基硅烷和烷基烷氧基硅烷的单体与钛或锆-醇盐化合物反应而获得。US 5853808描述了有助于形成富SiO2陶瓷涂层的硅氧烷和倍半硅氧烷聚合物,可以通过具有β取代的烷基的有机硅烷的水解和缩聚而获得。同时,EP 0997497A1公开了包含单、二、三、四烷氧基硅烷的烷氧基硅烷和三烷氧基硅烷二聚物某种结合的水解和缩聚,可以提供用于绝缘膜的树脂材料。
发明内容
本发明的特征在于具有卓越机械性能以及非常低的介电常数的硅氧烷基树脂的制备,和使用该硅氧烷基树脂的低介电绝缘膜的形成。
本发明的一方面涉及于有机溶剂中,在酸或碱催化剂和水存在下,水解和缩聚式(1)的第一单体和式(2)的第二单体制备硅氧烷基树脂:
式中,
R1为H、C1-3烷基或C6-15芳基;
X1、X2和X3各自独立为C1-3烷基、C1-10烷氧基或卤素,条件是它们至少之一为可水解的;
m为0~10的整数;
P为3~8的整数;
式中,
R2为H、C1-3烷基或C6-15芳基;
X4为C1-10烷氧基;
Y1为C1-3烷基或C1-10烷氧基;
n为0~10的整数。
本发明的另一方面涉及半导体器件的互连层之间形成绝缘膜的方法,该方法包含下列步骤:将本发明的硅氧烷基树脂溶于有机溶剂中,提供树脂溶液;用该树脂溶液涂布硅片;热固化得到的涂层膜。
本发明的再一方面涉及使用本发明的硅氧烷基树脂制造的层间绝缘膜。
从本发明下面的描述中,可以成功的达到本发明所有上述特征和其它特征。
优选实施方式
本发明通过缩聚式(1)的环硅氧烷单体和式(2)的直链硅氧烷单体,而提供具有3.0或更低的介电常数的硅氧烷基树脂。
式中,
R1为H、C1-3烷基或C6-15芳基;
X1、X2和X3各自独立为C1-3烷基、C1-10烷氧基或卤素,条件是它们至少之一为可水解的;
m为0~10的整数;
P为3~8的整数;
式中,
R2为H、C1-3烷基或C6-15芳基;
X4为C1-10烷氧基;
Y1为C1-3烷基或C1-10烷氧基;
n为0~10的整数。
在本发明的硅氧烷基树脂的制备中,以摩尔比1∶99~99∶1混合式(1)单体和式(2)单体。
优选的制备本发明的硅氧烷基树脂的酸或碱催化剂可以举例为但不限于盐酸、硝酸、苯磺酸、草酸、甲酸、氢氧化钾、氢氧化钠、三乙胺、碳酸氢钠和吡啶。使用此种催化剂,使得催化剂对单体的摩尔比为0.000001∶1~10∶1。
在制备本发明的硅氧烷基树脂中,水的用量为1~10000摩尔/摩尔单体,使得水对单体的摩尔比为1∶1~1000∶1。
用于制备本发明的硅氧烷基树脂的有机溶剂非限定性的实例包括脂肪烃溶剂例如己烷;芳香烃溶剂例如苯甲醚、三甲苯和二甲苯;酮基溶剂例如甲基异丁基酮、1-甲基-2-吡咯烷酮(pyrrolidinone)和丙酮;醚基溶剂例如环己酮、四氢呋喃和异丙醚;乙酸酯基溶剂例如乙酸乙酯、乙酸丁酯、丙二醇甲基醚乙酸酯;醇基溶剂例如异丙醇和丁醇;酰胺基溶剂例如二甲基乙酰胺和二甲基甲酰胺;硅基溶剂;及其混合物。
根据本发明,在0~200℃,优选50~110℃,水解和缩聚反应进行0.1~100小时,优选5~48小时。
由此得到的该硅氧烷基树脂Mw为3000~300000。在全部端基中Si-OR含量优选为大于5摩尔%。
本发明也提供使用本发明的硅氧烷基树脂形成半导体器件的层间绝缘层的方法。该绝缘层具有低于3.0的低介电常数,并表现出卓越的机械性能和耐热性。根据本发明,此绝缘层可以通过用在有机溶剂中的含有本发明的硅氧烷基树脂溶液,涂布硅片,然后热固化得到的涂层膜而获得。即,将溶解于有机溶剂中的本发明的树脂涂布到基材上。然后,通过简单常温干燥,或在接下来的热固化步骤的开始,通过使基材处于真空条件或在200℃或更低温度下适度加热,蒸发有机溶剂,使得树脂涂层膜可以沉积在基材的表面上。由此,通过在150~600℃,优选200~450℃加热基材1~150分钟,使树脂涂层膜固化,以便获得不溶、无裂纹膜。如在此使用的,“无裂纹膜”指没有任何使用光学显微镜,在放大率1000X下而可以观察到的裂纹的膜。如在此使用的,“不溶膜”指基本不溶于被描述用于溶解本发明的硅氧烷基树脂的任何溶剂的膜。
根据本发明,成孔剂(porogen)与本发明的硅氧烷基树脂结合使用,可以进一步降低最终绝缘膜的介电常数至2.50或更低。如在此使用的,“成孔剂”指产生孔的(pore-generating)任何化合物。在使用成孔剂的情况下,需要加热树脂膜至成孔剂的分解温度上的附加步骤,使得成孔剂可以分解。
用于本发明的成孔剂可以是本领域众所周知的任何成孔化合物,其非限定性实例为环糊精、聚己内酯,及其衍生物。将成孔剂与本发明的硅氧烷基树脂混合,使得成孔剂与树脂的重量比为1∶99~70∶30,其中成孔剂与树脂都为固体粉末形式。
溶解硅氧烷基树脂或成孔剂,来提供液态涂布组合物的溶剂的非限定性实例优选为脂族烃溶剂例如己烷;芳香烃溶剂例如苯甲醚、三甲苯和二甲苯;酮基溶剂例如甲基异丁基酮、1-甲基-2-吡咯烷酮和丙酮;醚基溶剂例如环己酮、四氢呋喃和异丙醚;乙酸酯基溶剂例如乙酸乙酯、乙酸丁酯和丙二醇甲基醚乙酸酯;醇基溶剂例如异丙醇和丁醇;酰胺基溶剂例如二甲基乙酰胺和二甲基甲酰胺;硅基溶剂;及其混合物。
在液态涂布组合物的制备中,有机溶剂的用量应足以将包含硅氧烷基树脂和成孔剂的固体成分均匀涂布到晶片的表面。因此,有机溶剂应该为液态涂布组合物的20~99.9重量%,优选70~95重量%。如果液态涂布组合物的有机溶剂含量小于20重量%,部分硅氧烷基树脂仍未溶解。另一方面,如果有机溶剂的含量超过99.9重量%,最终树脂膜的厚度将薄至1000或更薄。
在本发明中,可以使用本领域中公知的各种涂布方法,将由此获得的液态涂布组合物涂布到硅片上。可用于本发明的涂布方法的非限定性实例包括旋涂、浸涂、喷涂、流涂和丝网印刷,而旋涂是最优选的。
参考下面的实施例,可以更清楚地理解本发明。应该理解,下面的实施例并不意图以任何方式限制本发明的范围。
实施例1:硅氧烷单体的合成
实施例1-1:环硅氧烷单体(A)的合成
将10.0g(29.014毫摩尔)2,4,6,8-四甲基-2,4,6,8-四乙烯基环四硅氧烷和0.164g铂(O)-1,3-二乙烯基-1,1,3,3-四甲基二硅氧烷络合物(在二甲苯中的溶液)加入烧瓶中,然后用300ml二乙醚稀释。接着,烧瓶冷却到-78℃,然后其中缓慢加入17.29g(127.66毫摩尔)三氯硅烷,将其缓慢加热到室温。在室温下持续反应20小时,在大约0.1托的减压下从反应混合物中除去挥发材料。将100ml戊烷加入到反应混合物中,并搅拌1小时,接着用硅藻土过滤得到无色清澈的溶液。在减压下从溶液中除去甲苯,得到由式[Si(CH3)(CH2CH2SiCl3)O-]4代表的液体化合物,产率为95%。10.0g(11.28毫摩尔)液体化合物用500ml四氢呋喃稀释,加入13.83g(136.71毫摩尔)三乙胺。接着,将混合物冷却至-78℃,缓慢加入4.38g(136.71毫摩尔)甲醇,然后缓慢加热到室温。在室温下继续反应15小时,并用硅藻土过滤,从得到的滤出液中,在0.1托的减压下蒸发挥发材料。接下来,100ml戊烷加入到剩下的滤出液中,并搅拌1小时,接着用硅藻土过滤。5g活性炭加入到滤出液中并搅拌10小时。将从过滤搅拌的溶液获得的滤出液减压,从中除去己烷,获得无色液体的单体(A)。从NMR分析溶解在CDCl3中的此单体获得的结果如下:
1H-NMR(300MHz):δ0.09(s,12H,4×CH3),0.52-0.64(m,16H,4×CH2-CH2-),3.58(s,36H,4×[OCH3]3)
实施例1-2:直链硅氧烷单体(B)的合成
将10.0g(249.208毫摩尔)1,3-二氯四甲基二硅氧烷加入烧瓶中,然后用500ml四氢呋喃稀释。接着,烧瓶冷却到-78℃,然后其中缓慢加入10.95g(108.212毫摩尔)三乙胺,接着缓慢加入3.46g(107.90毫摩尔)甲醇。然后将反应温度缓慢升至室温。在室温下继续反应15小时。在反应结束时,将反应混合物用硅藻土过滤,在大约0.1托的减压下蒸发挥发材料。接下来,100ml戊烷加入到剩下的滤出液中,并搅拌1小时,接着用硅藻土过滤。在减压下从滤出液中除去己烷,获得无色液体。从简单蒸馏该液体可以获得无色液体单体(B)。从NMR分析溶解在CDCl3中的此单体获得的结果如下:
1H-NMR(300MHz):δ0.068(s,12H,4×CH3),3.45(s,6H,2×OCH3)。
实施例1-3:直链硅氧烷单体(C)的合成
按照与上面实施例1-2相同的方式进行实施例1-3,但是用1,5-二氯六甲基三硅氧烷代替1,3-二氯四甲基二硅氧烷。
从NMR分析由此获得并溶解在CDCl3中的此单体(C)获得的结果如下:
1H-NMR(300MHz):δ0.068(s,12H,4×CH3),0.077(s,3H,-CH3),3.44(s,6H,2×OCH3)。
实施例1-4:直链硅氧烷单体(D)的合成
按照与上面实施例1-2相同的方式进行实施例1-4,但是用1,7-二氯八甲基四硅氧烷代替1,3-二氯四甲基二硅氧烷。
从NMR分析由此获得并溶解在CDCl3中的此单体(C)获得的结果如下:
1H-NMR(300MHz):δ0.068(s,24H,8×CH3),3.45(s,6H,2×OCH3)。
实施例1-5:直链硅氧烷单体(E)的合成
从Sigma Aldrich(USA)得到环硅氧烷单体(E)。
实施例2:硅氧烷基树脂(a)~(m)的合成
按照下表1,将从上面的实施例1中得到的环硅氧烷单体(A)和直链硅氧烷单体(B)~(E)定量,并引入烧瓶中,接着用15倍的四氢呋喃稀释。接下来,在烧瓶降温至-78℃后,缓慢加入一定量的去离子水和HCl。然后,加热烧瓶到70℃,在此温度下,烧瓶保持20小时,以使反应可以继续。在反应结束时,反应混合物转移到分液漏斗中,接着加入与先前稀释单体时使用的四氢呋喃一样多的二乙醚和四氢呋喃。然后进行三次洗涤,每次使用达到分液漏斗中总溶液的十分之一的水。在洗涤后,从剩下的溶液中蒸发挥发分,得到白色粉末状聚合物。将粉末完全溶解于少量丙酮中获得清澈溶液,用0.2μm注射器过滤器(syringe filter)过滤,除去杂质而得到清澈滤出液,然后向该滤出液中缓慢加入去离子水。结果,形成了白色粉末状材料,然后从液相(丙酮和水的混合溶液)分离出来,并在0~20℃,大约0.1托的减压下干燥10小时,以生成分级的硅氧烷基树脂。
表1
树脂 | 单体(毫摩尔) | HCl(毫摩尔) | H2O(毫摩尔) | 产量(g) | ||||
单体(A) | 单体(B) | 单体(C) | 单体(D) | 单体(E) | ||||
(a) | 6.621 | 15.450 | 0.110 | 310 | 4.85 | |||
(b) | 15.450 | 15.450 | 0.216 | 721 | 9.70 | |||
(c) | 11.998 | 5.142 | 0.145 | 514 | 6.85 | |||
(d) | 11.998 | 5.142 | 0.145 | 514 | 6.70 | |||
(e) | 11.998 | 5.142 | 0.145 | 514 | 7.55 | |||
(f) | 11.998 | 5.142 | 0.145 | 857 | 7.60 | |||
(g) | 11.998 | 5.142 | 1.450 | 514 | 7.85 | |||
(h) | 11.998 | 5.142 | 0.101 | 514 | 7.80 | |||
(i) | 11.998 | 5.142 | 0.080 | 514 | 7.10 | |||
(j) | 11.998 | 5.142 | 0.048 | 514 | 6.35 | |||
(k) | 9.599 | 22.397 | 0.102 | 627 | 7.53 | |||
(l) | 7.199 | 28.796 | 0.101 | 617 | 7.56 | |||
(m) | 4.799 | 43.194 | 0.115 | 705 | 7.71 |
实施例3:树脂组合物的分析
从上面实施例2获得的硅氧烷基树脂分别按如下所述分析了Si-OH、Si-OCH3和Si-CH3的含量。结果在表2中。
表2
树脂 | Si-OH(%) | Si-OCH3(%) | Si-CH3(%) |
(a) | 6.2 | 0.3 | 93.5 |
(b) | 14.3 | 0.5 | 85.1 |
(c) | 28.6 | 0.7 | 70.7 |
(d) | 30.6 | 1.0 | 68.4 |
(e) | 28.1 | 0.9 | 71.0 |
(f) | 29.9 | 0.6 | 69.5 |
(g) | 18.3 | 0.7 | 81.0 |
(h) | 32.4 | 0.9 | 66.7 |
(i) | 33.3 | 1.0 | 65.7 |
(j) | 41.2 | 1.4 | 57.4 |
(k) | 33.2 | 1.8 | 65.0 |
(l) | 32.1 | 1.5 | 66.4 |
(m) | 27.3 | 1.5 | 71.2 |
使用NMR(Bruker Co.)以及下面的方程得到了Si-OH、Si-OCH3和Si-CH3的含量(%):
Si-OH(%)=(Si-OH)面积÷[(Si-OH)面积+(Si-OCH3)面积/3+(Si-CH3)面积/3]×100
Si-OCH3(%)=(Si-OCH3)面积/3÷[(Si-OH)面积+(Si-OCH3)面积/3+(Si-CH3)面积/3]×100
Si-CH3(%)=(Si-CH3)面积/3÷[(Si-OH)面积+(Si-OCH3)面积/3+(Si-CH3)面积/3]×100
实施例4:树脂膜的厚度和折射率测量
从上面实施例2得到的硅氧烷基树脂,及其与七(2,3,6-三-O-甲氧基)-β-环糊精的混合物分别溶解于丙二醇甲基醚乙酸酯(PGMEA),使得在得到的液体涂布组合物中固体物质的最终浓度为25重量%。然后,涂布组合物各自在硅片上旋涂30秒,保持旋转速度3000rpm。在氮气氛下,在热盘上相继软烘焙(在100℃下1分钟,在250℃下又1分种),以便充分蒸发有机溶剂。之后,温度以3℃/分钟的速度,在真空条件下升高到420℃,在此温度下,使涂层膜固化1小时,得到试验片。
如此制备的试验片各自分析膜厚和折射率。分别用剖面测量仪和棱镜偶合器在每个膜的5个点上测量膜厚和折射率。平均厚度和折射率连同其均匀性一起在表3示出。
表3
树脂膜组成 | 厚度() | R.I.* | R.I.均匀性(%) | 厚度均匀性(%) | ||
树脂 | 树脂(重量%) | 成孔剂(重量%) | ||||
(a) | 100 | - | 9647 | 1.4056 | 0.0174 | 2.09 |
(a) | 70 | 30 | 8946 | 1.3614 | 0.158 | 1.53 |
(b) | 100 | - | 11665 | 1.4204 | 0.049 | 0.45 |
(b) | 70 | 30 | 9283 | 1.3412 | 0.037 | 1.99 |
(c) | 100 | - | 10193 | 1.4299 | 0.031 | 0.62 |
(c) | 70 | 30 | 8983 | 1.3298 | 0.105 | 1.81 |
(d) | 100 | - | 11131 | 1.4355 | 0.010 | 0.45 |
(d) | 70 | 30 | 10075 | 1.3278 | 0.196 | 1.10 |
(e) | 100 | - | 10289 | 1.4395 | 0.052 | 2.56 |
(e) | 70 | 30 | 9604 | 1.3202 | 0.216 | 2.34 |
(f) | 100 | - | 12051 | 1.4358 | 0.081 | 1.23 |
(f) | 70 | 30 | 7540 | 1.3290 | 0.107 | 1.57 |
(g) | 100 | - | 13453 | 1.4207 | 0.047 | 0.92 |
(g) | 70 | 30 | 8829 | 1.3385 | 0.089 | 1.04 |
(h) | 100 | - | 12011 | 1.4397 | 0.023 | 1.38 |
(h) | 70 | 30 | 9739 | 1.3225 | 0.059 | 1.97 |
(i) | 100 | - | 11513 | 1.4403 | 0.072 | 2.52 |
(i) | 70 | 30 | 8508 | 1.3217 | 0.126 | 1.48 |
(j) | 100 | - | 12485 | 1.4454 | 0.032 | 0.72 |
(j) | 70 | 30 | 9787 | 1.3170 | 0.089 | 0.91 |
(k) | 100 | - | 10138 | 1.4249 | 0.081 | 1.31 |
(k) | 70 | 30 | 9387 | 1.3128 | 0.031 | 1.02 |
(l) | 100 | - | 7681 | 1.4190 | 0.076 | 1.30 |
(l) | 70 | 30 | 7489 | 1.3065 | 0.030 | 0.94 |
(m) | 100 | - | 8245 | 1.4086 | 0.082 | 1.05 |
(m) | 70 | 30 | 7958 | 1.3206 | 0.028 | 0.75 |
*R.I.:折射率
实施例5:树脂膜的介电常数测量
硼掺杂的P型硅片用3000热氧化硅膜涂布,接着使用金属蒸发器相继沉积100钛层、2000铝层和100钛层。按照上面实施例4中相同的方式,在这些晶片的表面各自形成树脂膜。接着,在树脂膜上通过硬质掩膜沉积1mm直径的环电极,其包含100厚的钛层和5000厚的铝层,从而提供具有MIM(金属-绝缘体-金属)结构的试验片。利用具有精密控制器(Micromanipulator 6200)探针的精密电感电容电阻测定计(HP4284A)平台在100kHz测量如此获得的试验片的电容。从下面的方程计算每个测试膜的介电常数,其中“d”值使用椭率计获得:
k=(C×d)/(ε0×A)
注)k:介电率
C:电容
d:膜厚
ε0:真空中介电常数
A:电极接触面积
计算的介电常数如表4所示。
表4
树脂膜组成 | 介电常数 | ||
树脂 | 树脂(重量%) | 成孔剂(重量%) | |
(a) | 100 | - | 2.83 |
(a) | 70 | 30 | 2.67 |
(b) | 100 | - | 2.72 |
(b) | 70 | 30 | 2.23 |
(c) | 100 | - | 2.74 |
(c) | 70 | 30 | 2.37 |
(d) | 100 | - | 2.79 |
(d) | 70 | 30 | 2.25 |
(e) | 100 | - | 2.71 |
(e) | 70 | 30 | 2.17 |
(f) | 100 | - | 2.78 |
(f) | 70 | 30 | 2.19 |
(g) | 100 | - | 2.80 |
(g) | 70 | 30 | 2.28 |
(h) | 100 | - | 2.80 |
(h) | 70 | 30 | 2.21 |
(i) | 100 | - | 2.81 |
(i) | 70 | 30 | 2.20 |
(j) | 100 | - | 2.66 |
(j) | 70 | 30 | 2.10 |
(k) | 100 | - | 2.76 |
(k) | 70 | 30 | 2.26 |
(l) | 100 | - | 2.75 |
(l) | 70 | 30 | 2.26 |
(m) | 100 | - | 2.71 |
(m) | 70 | 30 | 2.20 |
实施例6:树脂膜机械性能测试
使用Nanoindenter II(MIS Co.)测量上面实施例4制备的试验片的硬度和弹性模量。对每个树脂膜的试验片形成凹陷,直至凹口深度达到总厚度的10%。此时,为保证可实现该测量,每个试验片凹陷6点,测量平均硬度和模量。结果见表5。
表5
树脂膜组成 | 硬度(GPa) | 模量(GPa) | ||
树脂 | 树脂(重量%) | 成孔剂(重量%) | ||
(a) | 100 | - | 0.40 | 2.47 |
(a) | 70 | 30 | 0.27 | 2.06 |
(b) | 100 | - | 0.59 | 3.62 |
(b) | 70 | 30 | 0.39 | 2.46 |
(c) | 100 | - | 1.00 | 5.33 |
(c) | 70 | 30 | 0.51 | 2.84 |
(d) | 100 | - | 0.97 | 5.44 |
(d) | 70 | 30 | 0.44 | 2.57 |
(e) | 100 | - | 1.19 | 6.27 |
(e) | 70 | 30 | 0.48 | 2.70 |
(f) | 100 | - | 1.12 | 6.01 |
(f) | 70 | 30 | 0.52 | 3.18 |
(g) | 100 | - | 0.70 | 3.97 |
(g) | 70 | 30 | 0.37 | 2.60 |
(h) | 100 | - | 1.24 | 6.72 |
(h) | 70 | 30 | 0.47 | 2.93 |
(i) | 100 | - | 1.25 | 6.58 |
(i) | 70 | 30 | 0.48 | 2.98 |
(j) | 100 | - | 1.33 | 6.97 |
(j) | 70 | 30 | 0.50 | 3.00 |
(k) | 100 | - | 1.15 | 6.33 |
(k) | 70 | 30 | 0.40 | 2.51 |
(l) | 100 | - | 1.11 | 5.94 |
(l) | 70 | 30 | 0.39 | 2.78 |
(m) | 100 | - | 1.04 | 5.50 |
(m) | 70 | 30 | 0.36 | 2.46 |
对本领域技术人员,对本发明简单的改进和变化很容易获得,应该理解所有这种改进和变化都在本发明的范围内。
Claims (18)
2.根据权利要求1的硅氧烷基树脂,其中所述式(1)的第一单体与式(2)的第二单体的摩尔比为1∶99~99∶1。
3.根据权利要求1的硅氧烷基树脂,其中所述催化剂为盐酸、硝酸、苯磺酸、草酸、甲酸、氢氧化钾、氢氧化钠、三乙胺、碳酸氢钠或吡啶。
4.根据权利要求1的硅氧烷基树脂,其中所述单体与催化剂的摩尔比为1∶0.000001~1∶10。
5.根据权利要求1的硅氧烷基树脂,其中所述单体与水的摩尔比为1∶1~1∶1000。
6.根据权利要求1的硅氧烷基树脂,其中所述水解和缩聚反应在0~200℃下进行0.1~100小时。
7.根据权利要求1的硅氧烷基树脂,其中所述有机溶剂为脂族烃溶剂、芳香烃溶剂、酮基溶剂、醚基溶剂、乙酸酯基溶剂、醇基溶剂、酰胺基溶剂、硅基溶剂或其混合物。
8.根据权利要求1的硅氧烷基树脂,其中所述树脂的Mw为3000~300000。
9.一种在半导体器件的互连层之间形成绝缘膜的方法,该方法包括下列步骤:
通过将权利要求1的硅氧烷基树脂溶于有机溶剂中,提供液态涂布组合物;
用该液态涂布组合物涂布硅片,形成涂层膜;及
热固化该涂层膜。
10.根据权利要求9的方法,其中所述硅氧烷基树脂与成孔剂混合,使得树脂与成孔剂的重量比为99∶1~30∶70。
11.根据权利要求9的方法,其中所述成孔剂为环糊精、聚己内酯,或其衍生物。
12.根据权利要求9的方法,其中所述有机溶剂为脂族烃溶剂、芳香烃溶剂、酮基溶剂、醚基溶剂、乙酸酯基溶剂、醇基溶剂、酰胺基溶剂、硅基溶剂或其混合物。
13.根据权利要求9的方法,其中所述有机溶剂的量为液态涂布组合物的20~99.9重量%。
14.根据权利要求9的方法,其中所述液态涂布组合物通过旋涂涂布在硅片上。
15.根据权利要求9的方法,其中所述热固化在150~600℃下进行1~150分钟。
16.一种用于半导体器件的层间绝缘膜,其中所述绝缘膜是由权利要求1的硅氧烷基树脂制成的。
17.根据权利要求16的层间绝缘膜,其中通过使用成孔剂形成贯穿于所述绝缘膜的微孔。
18.根据权利要求16的层间绝缘膜,其中所述成孔剂为环糊精、聚己内酯,或其衍生物。
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CN101646736B (zh) * | 2007-04-05 | 2012-08-29 | 新日铁高新材料株式会社 | 表面平坦性绝缘膜形成用涂布溶液、表面平坦性绝缘膜被覆基材和该基材的制造方法 |
CN101611043B (zh) * | 2007-02-14 | 2013-03-13 | Jsr株式会社 | 含硅膜形成用材料、以及含硅绝缘膜及其形成方法 |
CN108043367A (zh) * | 2018-01-08 | 2018-05-18 | 海信(山东)空调有限公司 | 一种防凝露材料及其制备方法和应用 |
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KR100504291B1 (ko) * | 2003-07-14 | 2005-07-27 | 삼성전자주식회사 | 게르마늄을 포함하는 실록산계 수지 및 이를 이용한반도체 층간 절연막 형성 방법 |
US7504470B2 (en) * | 2004-08-31 | 2009-03-17 | Silecs Oy | Polyorganosiloxane dielectric materials |
KR20060068348A (ko) * | 2004-12-16 | 2006-06-21 | 삼성코닝 주식회사 | 실록산계 중합체 및 상기 중합체를 이용한 절연막 제조방법 |
KR20060090483A (ko) * | 2005-02-07 | 2006-08-11 | 삼성코닝 주식회사 | 풀러렌을 포함하는 저유전 박막 형성용 조성물, 이를이용한 저유전 박막 및 저유전 박막의 제조방법 |
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KR101386215B1 (ko) * | 2006-06-07 | 2014-04-17 | 삼성디스플레이 주식회사 | 전도성 고분자 조성물 및 이를 채용한 유기 광전 소자 |
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CN101611043B (zh) * | 2007-02-14 | 2013-03-13 | Jsr株式会社 | 含硅膜形成用材料、以及含硅绝缘膜及其形成方法 |
CN101646736B (zh) * | 2007-04-05 | 2012-08-29 | 新日铁高新材料株式会社 | 表面平坦性绝缘膜形成用涂布溶液、表面平坦性绝缘膜被覆基材和该基材的制造方法 |
CN108043367A (zh) * | 2018-01-08 | 2018-05-18 | 海信(山东)空调有限公司 | 一种防凝露材料及其制备方法和应用 |
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