CN1362741A - 熔断丝电路 - Google Patents

熔断丝电路 Download PDF

Info

Publication number
CN1362741A
CN1362741A CN01143949A CN01143949A CN1362741A CN 1362741 A CN1362741 A CN 1362741A CN 01143949 A CN01143949 A CN 01143949A CN 01143949 A CN01143949 A CN 01143949A CN 1362741 A CN1362741 A CN 1362741A
Authority
CN
China
Prior art keywords
mentioned
fracture
electric smelting
wire element
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN01143949A
Other languages
English (en)
Chinese (zh)
Inventor
木村亨
小柳胜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN1362741A publication Critical patent/CN1362741A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Read Only Memory (AREA)
  • Fuses (AREA)
CN01143949A 2000-12-27 2001-12-27 熔断丝电路 Pending CN1362741A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP399222/2000 2000-12-27
JP2000399222A JP2002203901A (ja) 2000-12-27 2000-12-27 フューズ回路

Publications (1)

Publication Number Publication Date
CN1362741A true CN1362741A (zh) 2002-08-07

Family

ID=18864036

Family Applications (1)

Application Number Title Priority Date Filing Date
CN01143949A Pending CN1362741A (zh) 2000-12-27 2001-12-27 熔断丝电路

Country Status (7)

Country Link
US (1) US6657531B2 (enExample)
EP (1) EP1221699B1 (enExample)
JP (1) JP2002203901A (enExample)
KR (1) KR100458884B1 (enExample)
CN (1) CN1362741A (enExample)
DE (1) DE60129292T2 (enExample)
TW (1) TW521392B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101127246B (zh) * 2006-08-18 2010-11-03 富士通半导体股份有限公司 电熔丝电路和电子元件
CN103871475A (zh) * 2014-02-21 2014-06-18 中国电子科技集团公司第二十四研究所 上电自复位的熔丝读取电路
CN105280236A (zh) * 2014-06-16 2016-01-27 爱思开海力士有限公司 具有熔丝阵列的半导体器件及其操作方法
WO2023221390A1 (zh) * 2022-05-19 2023-11-23 长鑫存储技术有限公司 反熔丝电路及反熔丝单元烧写状态实时验证方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6774457B2 (en) * 2001-09-13 2004-08-10 Texas Instruments Incorporated Rectangular contact used as a low voltage fuse element
KR100448703B1 (ko) * 2001-10-24 2004-09-16 삼성전자주식회사 메이크 링크 퓨즈를 구비한 회로 및 이를 이용한 반도체장치
JP4179834B2 (ja) * 2002-09-19 2008-11-12 株式会社リコー 半導体装置の製造装置及び製造方法
JP4456816B2 (ja) * 2003-01-29 2010-04-28 川崎マイクロエレクトロニクス株式会社 半導体装置およびその製造方法
JP3878586B2 (ja) 2003-07-17 2007-02-07 株式会社東芝 リード／プログラム電位発生回路
KR100528480B1 (ko) 2003-12-09 2005-11-15 삼성전자주식회사 반도체장치의 전기적 퓨즈 회로
KR100791071B1 (ko) * 2006-07-04 2008-01-02 삼성전자주식회사 일회 프로그래머블 소자, 이를 구비하는 전자시스템 및 그동작 방법
US8350264B2 (en) 2010-07-14 2013-01-08 International Businesss Machines Corporation Secure anti-fuse with low voltage programming through localized diffusion heating
KR101240256B1 (ko) * 2011-03-28 2013-03-11 에스케이하이닉스 주식회사 반도체 집적회로
CN117133342A (zh) * 2022-05-19 2023-11-28 长鑫存储技术有限公司 反熔丝电路及反熔丝单元烧写状态验证方法
US12389592B2 (en) * 2022-07-04 2025-08-12 Nanya Technology Corporation Memory device and method of forming the same

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182219A (ja) * 1984-02-29 1985-09-17 Fujitsu Ltd 半導体装置
JPS60201598A (ja) * 1984-03-23 1985-10-12 Fujitsu Ltd 半導体集積回路
US5243226A (en) * 1991-07-31 1993-09-07 Quicklogic Corporation Programming of antifuses
US5241496A (en) * 1991-08-19 1993-08-31 Micron Technology, Inc. Array of read-only memory cells, eacch of which has a one-time, voltage-programmable antifuse element constructed within a trench shared by a pair of cells
US5418487A (en) * 1992-09-04 1995-05-23 Benchmarg Microelectronics, Inc. Fuse state sense circuit
FR2697673B1 (fr) * 1992-10-29 1994-12-16 Gemplus Card Int Circuit à fusible, pour circuit intégré.
US5444650A (en) * 1994-01-25 1995-08-22 Nippondenso Co., Ltd. Semiconductor programmable read only memory device
US5635854A (en) * 1994-05-24 1997-06-03 Philips Electronics North America Corporation Programmable logic integrated circuit including verify circuitry for classifying fuse link states as validly closed, validly open or invalid
KR970017759A (ko) * 1995-09-14 1997-04-30 김광호 반도체 장치의 퓨즈용단 선택회로
US5731733A (en) * 1995-09-29 1998-03-24 Intel Corporation Static, low current sensing circuit for sensing the state of a fuse device
KR100228522B1 (ko) * 1996-08-06 1999-11-01 윤종용 부분칩을 통한 전류 절감특성을 갖는 반도체메모리장치
JP3361018B2 (ja) * 1996-11-11 2003-01-07 株式会社東芝 半導体記憶装置
KR100250755B1 (ko) * 1996-12-28 2000-05-01 김영환 플래쉬 메모리 장치
JP3401522B2 (ja) * 1998-07-06 2003-04-28 日本電気株式会社 ヒューズ回路及び冗長デコーダ回路
US6172929B1 (en) * 1999-06-25 2001-01-09 Micron Technology, Inc. Integrated circuit having aligned fuses and methods for forming and programming the fuses
JP3848022B2 (ja) 1999-08-27 2006-11-22 株式会社東芝 電気フューズ素子を備えた半導体集積回路装置
US6346846B1 (en) * 1999-12-17 2002-02-12 International Business Machines Corporation Methods and apparatus for blowing and sensing antifuses
KR100363327B1 (ko) * 2000-03-23 2002-11-30 삼성전자 주식회사 퓨즈 회로 및 그것의 프로그램 상태 검출 방법
JP3526446B2 (ja) * 2000-06-09 2004-05-17 株式会社東芝 フューズプログラム回路
JP2002133895A (ja) * 2000-08-17 2002-05-10 Toshiba Corp アンチフューズを用いたリダンダンシ回路及び半導体メモリにおける不良アドレス検索方法
US6426911B1 (en) * 2000-10-19 2002-07-30 Infineon Technologies Ag Area efficient method for programming electrical fuses
JP2002134620A (ja) * 2000-10-27 2002-05-10 Mitsubishi Electric Corp 半導体装置
JP2002217295A (ja) * 2001-01-12 2002-08-02 Toshiba Corp 半導体装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101127246B (zh) * 2006-08-18 2010-11-03 富士通半导体股份有限公司 电熔丝电路和电子元件
CN103871475A (zh) * 2014-02-21 2014-06-18 中国电子科技集团公司第二十四研究所 上电自复位的熔丝读取电路
CN103871475B (zh) * 2014-02-21 2016-09-14 中国电子科技集团公司第二十四研究所 上电自复位的熔丝读取电路
CN105280236A (zh) * 2014-06-16 2016-01-27 爱思开海力士有限公司 具有熔丝阵列的半导体器件及其操作方法
CN105280236B (zh) * 2014-06-16 2020-07-17 爱思开海力士有限公司 具有熔丝阵列的半导体器件及其操作方法
WO2023221390A1 (zh) * 2022-05-19 2023-11-23 长鑫存储技术有限公司 反熔丝电路及反熔丝单元烧写状态实时验证方法

Also Published As

Publication number Publication date
EP1221699A3 (en) 2004-11-17
EP1221699A2 (en) 2002-07-10
US6657531B2 (en) 2003-12-02
KR20020053769A (ko) 2002-07-05
US20020080004A1 (en) 2002-06-27
DE60129292T2 (de) 2008-03-20
JP2002203901A (ja) 2002-07-19
DE60129292D1 (de) 2007-08-23
TW521392B (en) 2003-02-21
KR100458884B1 (ko) 2004-12-03
EP1221699B1 (en) 2007-07-11

Similar Documents

Publication Publication Date Title
CN1362741A (zh) 熔断丝电路
US6469923B1 (en) Semiconductor device with programming capacitance element
CN1491417B (zh) 可编程开关元件和将晶体管编程为可重新编程开关的方法
JP4992149B2 (ja) モス構造のアンチヒューズを利用したメモリリペア回路
JP2000208637A (ja) ポストパッケ―ジｄｒａｍリペアのためのアンチヒュ―ズ回路
CN101488502A (zh) 非易失性半导体存储装置
KR890001847B1 (ko) 반도체 메모리 장치의 리던던시 회로
CN102446899A (zh) 半导体器件
KR100744139B1 (ko) 단일 게이트 구조를 가지는 ｅｅｐｒｏｍ 및 그 동작 방법
JP5466594B2 (ja) 半導体記憶装置及びアンチヒューズのプログラム方法
JP3848022B2 (ja) 電気フューズ素子を備えた半導体集積回路装置
CN1737993A (zh) Mos型电熔丝及其编程方法和采用该电熔丝的半导体器件
KR20100060149A (ko) 반도체 장치에서의 인버터 타입 안티 퓨즈회로
JP2012043970A (ja) 半導体装置、メモリ装置への書込方法、メモリ装置からの読出方法、及び半導体装置の製造方法
KR100506978B1 (ko) 휘발성 반도체 메모리의 제조공정에서 제조된 불휘발성메모리 셀 트랜지스터를 퓨즈소자로서 갖는 반도체 집적회로장치
JP4040102B2 (ja) 冗長エレメントとして単一ポリシリコンフローティングゲートトランジスタを使用するメモリ冗長回路
US7512004B2 (en) Semiconductor memory device having stacked gate including charge accumulation layer and control gate and test method thereof
KR960007479B1 (ko) 반도체 장치
JP2008047702A (ja) 半導体記憶装置
US7218560B2 (en) Semiconductor memory device
KR100861209B1 (ko) 서브 워드 라인 드라이버를 포함하는 반도체 소자
CN100365789C (zh) 用于检测半导体器件缺陷部分的方法和设备
CN101131869A (zh) 半导体存储器设备
JP2839718B2 (ja) 不揮発性メモリを選択的にプログラムするための方法
JP2005044905A (ja) 半導体装置、そのテスト方法およびｉｃカード

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication