DE60129292T2 - Schmelzsicherungsschaltung mit Kondensatoren als Sicherungselemente - Google Patents

Schmelzsicherungsschaltung mit Kondensatoren als Sicherungselemente Download PDF

Info

Publication number
DE60129292T2
DE60129292T2 DE60129292T DE60129292T DE60129292T2 DE 60129292 T2 DE60129292 T2 DE 60129292T2 DE 60129292 T DE60129292 T DE 60129292T DE 60129292 T DE60129292 T DE 60129292T DE 60129292 T2 DE60129292 T2 DE 60129292T2
Authority
DE
Germany
Prior art keywords
electrical fuse
circuit
fuse element
voltage
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60129292T
Other languages
German (de)
English (en)
Other versions
DE60129292D1 (de
Inventor
Tohru Minato-ku Kimura
Masaru Minato-ku Koyanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE60129292D1 publication Critical patent/DE60129292D1/de
Publication of DE60129292T2 publication Critical patent/DE60129292T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Read Only Memory (AREA)
  • Fuses (AREA)
DE60129292T 2000-12-27 2001-12-21 Schmelzsicherungsschaltung mit Kondensatoren als Sicherungselemente Expired - Lifetime DE60129292T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000399222A JP2002203901A (ja) 2000-12-27 2000-12-27 フューズ回路
JP2000399222 2000-12-27

Publications (2)

Publication Number Publication Date
DE60129292D1 DE60129292D1 (de) 2007-08-23
DE60129292T2 true DE60129292T2 (de) 2008-03-20

Family

ID=18864036

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60129292T Expired - Lifetime DE60129292T2 (de) 2000-12-27 2001-12-21 Schmelzsicherungsschaltung mit Kondensatoren als Sicherungselemente

Country Status (7)

Country Link
US (1) US6657531B2 (enExample)
EP (1) EP1221699B1 (enExample)
JP (1) JP2002203901A (enExample)
KR (1) KR100458884B1 (enExample)
CN (1) CN1362741A (enExample)
DE (1) DE60129292T2 (enExample)
TW (1) TW521392B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6774457B2 (en) * 2001-09-13 2004-08-10 Texas Instruments Incorporated Rectangular contact used as a low voltage fuse element
KR100448703B1 (ko) * 2001-10-24 2004-09-16 삼성전자주식회사 메이크 링크 퓨즈를 구비한 회로 및 이를 이용한 반도체장치
JP4179834B2 (ja) * 2002-09-19 2008-11-12 株式会社リコー 半導体装置の製造装置及び製造方法
JP4456816B2 (ja) * 2003-01-29 2010-04-28 川崎マイクロエレクトロニクス株式会社 半導体装置およびその製造方法
JP3878586B2 (ja) 2003-07-17 2007-02-07 株式会社東芝 リード／プログラム電位発生回路
KR100528480B1 (ko) 2003-12-09 2005-11-15 삼성전자주식회사 반도체장치의 전기적 퓨즈 회로
KR100791071B1 (ko) * 2006-07-04 2008-01-02 삼성전자주식회사 일회 프로그래머블 소자, 이를 구비하는 전자시스템 및 그동작 방법
JP5119626B2 (ja) * 2006-08-18 2013-01-16 富士通セミコンダクター株式会社 電気ヒューズ回路
US8350264B2 (en) 2010-07-14 2013-01-08 International Businesss Machines Corporation Secure anti-fuse with low voltage programming through localized diffusion heating
KR101240256B1 (ko) * 2011-03-28 2013-03-11 에스케이하이닉스 주식회사 반도체 집적회로
CN103871475B (zh) * 2014-02-21 2016-09-14 中国电子科技集团公司第二十四研究所 上电自复位的熔丝读取电路
KR20150144147A (ko) * 2014-06-16 2015-12-24 에스케이하이닉스 주식회사 반도체 장치 및 그의 동작방법
CN117133342A (zh) * 2022-05-19 2023-11-28 长鑫存储技术有限公司 反熔丝电路及反熔丝单元烧写状态验证方法
CN117133341A (zh) * 2022-05-19 2023-11-28 长鑫存储技术有限公司 反熔丝电路及反熔丝单元烧写状态实时验证方法
US12389592B2 (en) * 2022-07-04 2025-08-12 Nanya Technology Corporation Memory device and method of forming the same

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182219A (ja) * 1984-02-29 1985-09-17 Fujitsu Ltd 半導体装置
JPS60201598A (ja) * 1984-03-23 1985-10-12 Fujitsu Ltd 半導体集積回路
US5243226A (en) * 1991-07-31 1993-09-07 Quicklogic Corporation Programming of antifuses
US5241496A (en) * 1991-08-19 1993-08-31 Micron Technology, Inc. Array of read-only memory cells, eacch of which has a one-time, voltage-programmable antifuse element constructed within a trench shared by a pair of cells
US5418487A (en) * 1992-09-04 1995-05-23 Benchmarg Microelectronics, Inc. Fuse state sense circuit
FR2697673B1 (fr) * 1992-10-29 1994-12-16 Gemplus Card Int Circuit à fusible, pour circuit intégré.
US5444650A (en) * 1994-01-25 1995-08-22 Nippondenso Co., Ltd. Semiconductor programmable read only memory device
US5635854A (en) * 1994-05-24 1997-06-03 Philips Electronics North America Corporation Programmable logic integrated circuit including verify circuitry for classifying fuse link states as validly closed, validly open or invalid
KR970017759A (ko) * 1995-09-14 1997-04-30 김광호 반도체 장치의 퓨즈용단 선택회로
US5731733A (en) * 1995-09-29 1998-03-24 Intel Corporation Static, low current sensing circuit for sensing the state of a fuse device
KR100228522B1 (ko) * 1996-08-06 1999-11-01 윤종용 부분칩을 통한 전류 절감특성을 갖는 반도체메모리장치
JP3361018B2 (ja) * 1996-11-11 2003-01-07 株式会社東芝 半導体記憶装置
KR100250755B1 (ko) * 1996-12-28 2000-05-01 김영환 플래쉬 메모리 장치
JP3401522B2 (ja) * 1998-07-06 2003-04-28 日本電気株式会社 ヒューズ回路及び冗長デコーダ回路
US6172929B1 (en) * 1999-06-25 2001-01-09 Micron Technology, Inc. Integrated circuit having aligned fuses and methods for forming and programming the fuses
JP3848022B2 (ja) 1999-08-27 2006-11-22 株式会社東芝 電気フューズ素子を備えた半導体集積回路装置
US6346846B1 (en) * 1999-12-17 2002-02-12 International Business Machines Corporation Methods and apparatus for blowing and sensing antifuses
KR100363327B1 (ko) * 2000-03-23 2002-11-30 삼성전자 주식회사 퓨즈 회로 및 그것의 프로그램 상태 검출 방법
JP3526446B2 (ja) * 2000-06-09 2004-05-17 株式会社東芝 フューズプログラム回路
JP2002133895A (ja) * 2000-08-17 2002-05-10 Toshiba Corp アンチフューズを用いたリダンダンシ回路及び半導体メモリにおける不良アドレス検索方法
US6426911B1 (en) * 2000-10-19 2002-07-30 Infineon Technologies Ag Area efficient method for programming electrical fuses
JP2002134620A (ja) * 2000-10-27 2002-05-10 Mitsubishi Electric Corp 半導体装置
JP2002217295A (ja) * 2001-01-12 2002-08-02 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
EP1221699A3 (en) 2004-11-17
EP1221699A2 (en) 2002-07-10
US6657531B2 (en) 2003-12-02
KR20020053769A (ko) 2002-07-05
US20020080004A1 (en) 2002-06-27
JP2002203901A (ja) 2002-07-19
DE60129292D1 (de) 2007-08-23
CN1362741A (zh) 2002-08-07
TW521392B (en) 2003-02-21
KR100458884B1 (ko) 2004-12-03
EP1221699B1 (en) 2007-07-11

Similar Documents

Publication Publication Date Title
DE60129292T2 (de) Schmelzsicherungsschaltung mit Kondensatoren als Sicherungselemente
DE69732361T2 (de) Antifuse-Detektorschaltung
DE60009181T2 (de) Antischmelzsicherungsschaltung zur DRAMreparatur nach der Verpackung ins Gehäuse
DE3872762T2 (de) Referenzspannungsgeneratorschaltung.
DE102004022376B4 (de) Halbleitervorrichtung mit einer RESURF-Struktur, Verfahren zum Herstellen einer solchen Halbleitervorrichtung sowie Verfahren zum Auswerten eines Herstellungsprozesses einer solchen Halbleitervorrichtung
DE68921018T2 (de) EPROM mit 2 Zellen pro bit.
DE3889650T2 (de) Integrierte Halbleiterschaltung mit einem Eingangsspannungsbegrenzer.
DE69227413T2 (de) Zwischenspeicherschaltung für Daten mit einer nichtlöschbaren Speicherzelle
DE102004055006B4 (de) Flipflop mit zusätzlicher Zustandsspeicherung bei Abschaltung
DE4437757C2 (de) Referenzspannungserzeugungsschaltung
DE60304746T2 (de) Verfahren und Vorrichtung zur Verifikation eines Gate-Oxide Fuse-Elementes
DE69705118T2 (de) Speichervorrichtungsfolgeschaltung
DE69119957T2 (de) CMOS-Speichereinrichtung mit verbesserter Leseverstärker-Steuerung
DE4336907A1 (de) Substratpotential-Erzeugungsschaltung zum Erzeugen eines Substratpotentials mit einem niedrigen Pegel und Halbleitervorrichtung mit einer solchen Schaltung
DE102019208419B4 (de) Speicheranordnung mit verteilten Referenzzellen zur Stromerfassung
DE4226070A1 (de) Halbleiterspeichereinrichtung mit redundanzschaltkreis und testverfahren zum pruefen, ob der redundanzschaltkreis in ihr benutzt wird oder nicht
DE2901233A1 (de) Dynamischer lese-auffrischdetektor
DE10123879A1 (de) Substratpotential-Erfassungsschaltung und Substratpotential-Erzeugungsschaltung
DE69517287T2 (de) Pegelumsetzer
DE69112475T2 (de) Speicheranordnung.
DE69131872T2 (de) Dynamische Halbleiterspeicherschaltung
DE3630679C2 (enExample)
DE19727262B4 (de) Halbleiterspeichervorrichtung mit über Leckdetektionsmittel gesteuerter Substratspannungserzeugungsschaltung
DE69803215T2 (de) Programmierbare speicherzelle
DE10154879B4 (de) Halbleiterspeicherbauelement mit Bitleitungen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition