JP2002203901A - フューズ回路 - Google Patents

フューズ回路

Info

Publication number
JP2002203901A
JP2002203901A JP2000399222A JP2000399222A JP2002203901A JP 2002203901 A JP2002203901 A JP 2002203901A JP 2000399222 A JP2000399222 A JP 2000399222A JP 2000399222 A JP2000399222 A JP 2000399222A JP 2002203901 A JP2002203901 A JP 2002203901A
Authority
JP
Japan
Prior art keywords
fuse element
destruction
electric fuse
state
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000399222A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002203901A5 (enExample
Inventor
Toru Kimura
木村　　亨
Masaru Koyanagi
勝 小柳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Priority to JP2000399222A priority Critical patent/JP2002203901A/ja
Priority to DE60129292T priority patent/DE60129292T2/de
Priority to US10/026,230 priority patent/US6657531B2/en
Priority to EP01130511A priority patent/EP1221699B1/en
Priority to TW090132334A priority patent/TW521392B/zh
Priority to KR10-2001-0085949A priority patent/KR100458884B1/ko
Priority to CN01143949A priority patent/CN1362741A/zh
Publication of JP2002203901A publication Critical patent/JP2002203901A/ja
Publication of JP2002203901A5 publication Critical patent/JP2002203901A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Read Only Memory (AREA)
  • Fuses (AREA)
JP2000399222A 2000-12-27 2000-12-27 フューズ回路 Pending JP2002203901A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2000399222A JP2002203901A (ja) 2000-12-27 2000-12-27 フューズ回路
DE60129292T DE60129292T2 (de) 2000-12-27 2001-12-21 Schmelzsicherungsschaltung mit Kondensatoren als Sicherungselemente
US10/026,230 US6657531B2 (en) 2000-12-27 2001-12-21 Fuse circuit using capacitors as fuse elements
EP01130511A EP1221699B1 (en) 2000-12-27 2001-12-21 Fuse circuit using capacitors as fuse elements
TW090132334A TW521392B (en) 2000-12-27 2001-12-26 Fuse circuit
KR10-2001-0085949A KR100458884B1 (ko) 2000-12-27 2001-12-27 퓨즈 회로
CN01143949A CN1362741A (zh) 2000-12-27 2001-12-27 熔断丝电路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000399222A JP2002203901A (ja) 2000-12-27 2000-12-27 フューズ回路

Publications (2)

Publication Number Publication Date
JP2002203901A true JP2002203901A (ja) 2002-07-19
JP2002203901A5 JP2002203901A5 (enExample) 2005-07-21

Family

ID=18864036

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000399222A Pending JP2002203901A (ja) 2000-12-27 2000-12-27 フューズ回路

Country Status (7)

Country Link
US (1) US6657531B2 (enExample)
EP (1) EP1221699B1 (enExample)
JP (1) JP2002203901A (enExample)
KR (1) KR100458884B1 (enExample)
CN (1) CN1362741A (enExample)
DE (1) DE60129292T2 (enExample)
TW (1) TW521392B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6920070B2 (en) 2003-07-17 2005-07-19 Kabushiki Kaisha Toshiba Read/program potential generating circuit

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6774457B2 (en) * 2001-09-13 2004-08-10 Texas Instruments Incorporated Rectangular contact used as a low voltage fuse element
KR100448703B1 (ko) * 2001-10-24 2004-09-16 삼성전자주식회사 메이크 링크 퓨즈를 구비한 회로 및 이를 이용한 반도체장치
JP4179834B2 (ja) * 2002-09-19 2008-11-12 株式会社リコー 半導体装置の製造装置及び製造方法
JP4456816B2 (ja) * 2003-01-29 2010-04-28 川崎マイクロエレクトロニクス株式会社 半導体装置およびその製造方法
KR100528480B1 (ko) 2003-12-09 2005-11-15 삼성전자주식회사 반도체장치의 전기적 퓨즈 회로
KR100791071B1 (ko) * 2006-07-04 2008-01-02 삼성전자주식회사 일회 프로그래머블 소자, 이를 구비하는 전자시스템 및 그동작 방법
JP5119626B2 (ja) * 2006-08-18 2013-01-16 富士通セミコンダクター株式会社 電気ヒューズ回路
US8350264B2 (en) 2010-07-14 2013-01-08 International Businesss Machines Corporation Secure anti-fuse with low voltage programming through localized diffusion heating
KR101240256B1 (ko) * 2011-03-28 2013-03-11 에스케이하이닉스 주식회사 반도체 집적회로
CN103871475B (zh) * 2014-02-21 2016-09-14 中国电子科技集团公司第二十四研究所 上电自复位的熔丝读取电路
KR20150144147A (ko) * 2014-06-16 2015-12-24 에스케이하이닉스 주식회사 반도체 장치 및 그의 동작방법
CN117133342A (zh) * 2022-05-19 2023-11-28 长鑫存储技术有限公司 反熔丝电路及反熔丝单元烧写状态验证方法
CN117133341A (zh) * 2022-05-19 2023-11-28 长鑫存储技术有限公司 反熔丝电路及反熔丝单元烧写状态实时验证方法
US12389592B2 (en) * 2022-07-04 2025-08-12 Nanya Technology Corporation Memory device and method of forming the same

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182219A (ja) * 1984-02-29 1985-09-17 Fujitsu Ltd 半導体装置
JPS60201598A (ja) * 1984-03-23 1985-10-12 Fujitsu Ltd 半導体集積回路
US5243226A (en) * 1991-07-31 1993-09-07 Quicklogic Corporation Programming of antifuses
US5241496A (en) * 1991-08-19 1993-08-31 Micron Technology, Inc. Array of read-only memory cells, eacch of which has a one-time, voltage-programmable antifuse element constructed within a trench shared by a pair of cells
US5418487A (en) * 1992-09-04 1995-05-23 Benchmarg Microelectronics, Inc. Fuse state sense circuit
FR2697673B1 (fr) * 1992-10-29 1994-12-16 Gemplus Card Int Circuit à fusible, pour circuit intégré.
US5444650A (en) * 1994-01-25 1995-08-22 Nippondenso Co., Ltd. Semiconductor programmable read only memory device
US5635854A (en) * 1994-05-24 1997-06-03 Philips Electronics North America Corporation Programmable logic integrated circuit including verify circuitry for classifying fuse link states as validly closed, validly open or invalid
KR970017759A (ko) * 1995-09-14 1997-04-30 김광호 반도체 장치의 퓨즈용단 선택회로
US5731733A (en) * 1995-09-29 1998-03-24 Intel Corporation Static, low current sensing circuit for sensing the state of a fuse device
KR100228522B1 (ko) * 1996-08-06 1999-11-01 윤종용 부분칩을 통한 전류 절감특성을 갖는 반도체메모리장치
JP3361018B2 (ja) * 1996-11-11 2003-01-07 株式会社東芝 半導体記憶装置
KR100250755B1 (ko) * 1996-12-28 2000-05-01 김영환 플래쉬 메모리 장치
JP3401522B2 (ja) * 1998-07-06 2003-04-28 日本電気株式会社 ヒューズ回路及び冗長デコーダ回路
US6172929B1 (en) * 1999-06-25 2001-01-09 Micron Technology, Inc. Integrated circuit having aligned fuses and methods for forming and programming the fuses
JP3848022B2 (ja) 1999-08-27 2006-11-22 株式会社東芝 電気フューズ素子を備えた半導体集積回路装置
US6346846B1 (en) * 1999-12-17 2002-02-12 International Business Machines Corporation Methods and apparatus for blowing and sensing antifuses
KR100363327B1 (ko) * 2000-03-23 2002-11-30 삼성전자 주식회사 퓨즈 회로 및 그것의 프로그램 상태 검출 방법
JP3526446B2 (ja) * 2000-06-09 2004-05-17 株式会社東芝 フューズプログラム回路
JP2002133895A (ja) * 2000-08-17 2002-05-10 Toshiba Corp アンチフューズを用いたリダンダンシ回路及び半導体メモリにおける不良アドレス検索方法
US6426911B1 (en) * 2000-10-19 2002-07-30 Infineon Technologies Ag Area efficient method for programming electrical fuses
JP2002134620A (ja) * 2000-10-27 2002-05-10 Mitsubishi Electric Corp 半導体装置
JP2002217295A (ja) * 2001-01-12 2002-08-02 Toshiba Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6920070B2 (en) 2003-07-17 2005-07-19 Kabushiki Kaisha Toshiba Read/program potential generating circuit

Also Published As

Publication number Publication date
EP1221699A3 (en) 2004-11-17
EP1221699A2 (en) 2002-07-10
US6657531B2 (en) 2003-12-02
KR20020053769A (ko) 2002-07-05
US20020080004A1 (en) 2002-06-27
DE60129292T2 (de) 2008-03-20
DE60129292D1 (de) 2007-08-23
CN1362741A (zh) 2002-08-07
TW521392B (en) 2003-02-21
KR100458884B1 (ko) 2004-12-03
EP1221699B1 (en) 2007-07-11

Similar Documents

Publication Publication Date Title
US6400632B1 (en) Semiconductor device including a fuse circuit in which the electric current is cut off after blowing so as to prevent voltage fall
JP4531901B2 (ja) ポストパッケージｄｒａｍリペアのためのアンチヒューズ回路
US6421293B1 (en) One-time programmable memory cell in CMOS technology
JP2002203901A (ja) フューズ回路
KR101027734B1 (ko) 전기 퓨즈 회로 및 전자 부품
US8842488B2 (en) Low voltage efuse programming circuit and method
JP2000011684A (ja) 入力保護回路、アンチフューズアドレス検出回路および半導体集積回路装置
JPH0961497A (ja) 半導体装置およびその試験方法
KR890001847B1 (ko) 반도체 메모리 장치의 리던던시 회로
KR101762918B1 (ko) 접합 다이오드를 이용한 이퓨즈 오티피 메모리 회로
US20060244511A1 (en) Static, low-voltage fuse-based cell with high-voltage programming
US7539074B2 (en) Protection circuit with antifuse configured as semiconductor memory redundancy circuitry
JP2006012211A (ja) 半導体集積回路
JP3848022B2 (ja) 電気フューズ素子を備えた半導体集積回路装置
KR20100060149A (ko) 반도체 장치에서의 인버터 타입 안티 퓨즈회로
JP4684309B2 (ja) 半導体装置
KR20200057658A (ko) 안티 퓨즈 메모리 셀
JP3105753B2 (ja) 集積回路用ヒューズ
US6606264B2 (en) Programmable circuit and its method of operation
US7482854B2 (en) E-fuse circuit using leakage current path of transistor
JP2011119018A (ja) 半導体装置
JPH04358400A (ja) 半導体記憶装置の冗長回路
JP2003031671A (ja) プログラム用電源回路を有する半導体装置及びその設定方法
KR20060116905A (ko) 반도체 메모리 소자의 리페어 회로
JPH1050856A (ja) 半導体集積回路

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041126

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20041126

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050422

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050510

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050711

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20070313