DE69803215T2 - Programmierbare speicherzelle - Google Patents

Programmierbare speicherzelle

Info

Publication number
DE69803215T2
DE69803215T2 DE69803215T DE69803215T DE69803215T2 DE 69803215 T2 DE69803215 T2 DE 69803215T2 DE 69803215 T DE69803215 T DE 69803215T DE 69803215 T DE69803215 T DE 69803215T DE 69803215 T2 DE69803215 T2 DE 69803215T2
Authority
DE
Germany
Prior art keywords
storage cell
programmable storage
programmable
cell
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69803215T
Other languages
English (en)
Other versions
DE69803215D1 (de
Inventor
E Jefferson
B Pedersen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Altera Corp
Original Assignee
Altera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Altera Corp filed Critical Altera Corp
Publication of DE69803215D1 publication Critical patent/DE69803215D1/de
Application granted granted Critical
Publication of DE69803215T2 publication Critical patent/DE69803215T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
DE69803215T 1997-10-16 1998-10-15 Programmierbare speicherzelle Expired - Fee Related DE69803215T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US6206397P 1997-10-16 1997-10-16
US09/167,637 US6115312A (en) 1997-10-16 1998-10-06 Programmable logic device memory cell circuit
PCT/US1998/021783 WO1999019877A1 (en) 1997-10-16 1998-10-15 Programmable logic device memory cell circuit

Publications (2)

Publication Number Publication Date
DE69803215D1 DE69803215D1 (de) 2002-02-21
DE69803215T2 true DE69803215T2 (de) 2002-08-14

Family

ID=26741821

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69803215T Expired - Fee Related DE69803215T2 (de) 1997-10-16 1998-10-15 Programmierbare speicherzelle

Country Status (5)

Country Link
US (1) US6115312A (de)
EP (1) EP1025564B1 (de)
JP (1) JP2001520432A (de)
DE (1) DE69803215T2 (de)
WO (1) WO1999019877A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6288437B1 (en) * 1999-02-26 2001-09-11 Micron Technology, Inc. Antifuse structures methods and applications
KR100471168B1 (ko) * 2002-05-27 2005-03-08 삼성전자주식회사 반도체 메모리 장치의 불량 셀을 스크린하는 회로, 그스크린 방법 및 그 스크린을 위한 배치 방법
US7372720B1 (en) 2005-02-16 2008-05-13 Altera Corporation Methods and apparatus for decreasing soft errors and cell leakage in integrated circuit structures
DE102005038938B4 (de) * 2005-08-17 2020-04-02 Infineon Technologies Ag Speicheranordnung mit einem Speicherelement
US7282949B2 (en) * 2005-09-30 2007-10-16 International Business Machines Corporation FPGA powerup to known functional state
US7430148B2 (en) * 2005-11-17 2008-09-30 Altera Corporation Volatile memory elements with boosted output voltages for programmable logic device integrated circuits
US7948792B1 (en) * 2009-04-15 2011-05-24 Altera Corporation Memory and techniques for using same
US8255702B1 (en) 2009-12-03 2012-08-28 Altera Corporation Programmable logic device with improved security
US9235460B2 (en) 2012-02-27 2016-01-12 Altera Corporation Methods and apparatus for automatic fault detection

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6271088A (ja) * 1985-09-24 1987-04-01 Hitachi Ltd スタテイツク型ｒａｍ
US4928266A (en) * 1988-05-26 1990-05-22 Visic, Inc. Static ram with high speed, low power reset
US5018102A (en) * 1988-12-20 1991-05-21 Texas Instruments, Incorporated Memory having selected state on power-up
JPH04106784A (ja) * 1990-08-28 1992-04-08 Fujitsu Ltd 半導体集積回路
US5311477A (en) * 1991-07-17 1994-05-10 Sgs-Thomson Microelectronics, Inc. Integrated circuit memory device having flash clear
US5313430A (en) * 1992-12-09 1994-05-17 International Business Machines Corporation Power down circuit for testing memory arrays
US5604453A (en) * 1993-04-23 1997-02-18 Altera Corporation Circuit for reducing ground bounce
US5548228A (en) * 1994-09-28 1996-08-20 Altera Corporation Reconfigurable programmable logic device having static and non-volatile memory
US5671179A (en) * 1994-10-19 1997-09-23 Intel Corporation Low power pulse generator for smart voltage flash eeprom
US5557579A (en) * 1995-06-26 1996-09-17 Micron Technology, Inc. Power-up circuit responsive to supply voltage transients with signal delay
JP3542675B2 (ja) * 1995-07-24 2004-07-14 株式会社ルネサステクノロジ 半導体記憶装置
US6041000A (en) * 1998-10-30 2000-03-21 Stmicroelectronics, Inc. Initialization for fuse control

Also Published As

Publication number Publication date
WO1999019877A1 (en) 1999-04-22
US6115312A (en) 2000-09-05
EP1025564B1 (de) 2002-01-16
EP1025564A1 (de) 2000-08-09
DE69803215D1 (de) 2002-02-21
JP2001520432A (ja) 2001-10-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee