CN1228786C - 非易失性半导体存储器的编程方法 - Google Patents

非易失性半导体存储器的编程方法 Download PDF

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Publication number
CN1228786C
CN1228786C CNB021190542A CN02119054A CN1228786C CN 1228786 C CN1228786 C CN 1228786C CN B021190542 A CNB021190542 A CN B021190542A CN 02119054 A CN02119054 A CN 02119054A CN 1228786 C CN1228786 C CN 1228786C
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CN
China
Prior art keywords
voltage
memory cell
programming
bit line
nonvolatile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB021190542A
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English (en)
Chinese (zh)
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CN1399280A (zh
Inventor
金井正博
龟井辉彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hello Lsi Design And Installation Technology Inc
Seiko Epson Corp
Original Assignee
Hello Lsi Design And Installation Technology Inc
Seiko Epson Corp
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Publication of CN1399280A publication Critical patent/CN1399280A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • G11C16/0458—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates comprising two or more independent floating gates which store independent data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
CNB021190542A 2001-05-08 2002-05-08 非易失性半导体存储器的编程方法 Expired - Fee Related CN1228786C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP137165/2001 2001-05-08
JP137165/01 2001-05-08
JP2001137165A JP4715024B2 (ja) 2001-05-08 2001-05-08 不揮発性半導体記憶装置のプログラム方法

Publications (2)

Publication Number Publication Date
CN1399280A CN1399280A (zh) 2003-02-26
CN1228786C true CN1228786C (zh) 2005-11-23

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Family Applications (1)

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CNB021190542A Expired - Fee Related CN1228786C (zh) 2001-05-08 2002-05-08 非易失性半导体存储器的编程方法

Country Status (7)

Country Link
US (1) US6587381B2 (OSRAM)
EP (1) EP1256960B1 (OSRAM)
JP (1) JP4715024B2 (OSRAM)
KR (1) KR100446402B1 (OSRAM)
CN (1) CN1228786C (OSRAM)
AT (1) ATE267447T1 (OSRAM)
DE (1) DE60200498T2 (OSRAM)

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JP2004199738A (ja) * 2002-12-16 2004-07-15 Seiko Epson Corp 不揮発性記憶装置
JP3985689B2 (ja) * 2003-02-21 2007-10-03 セイコーエプソン株式会社 不揮発性半導体記憶装置
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KR102083826B1 (ko) * 2013-05-13 2020-03-03 주식회사 실리콘웍스 표시 장치의 가비지 프로세싱 회로
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Also Published As

Publication number Publication date
EP1256960A1 (en) 2002-11-13
US6587381B2 (en) 2003-07-01
KR20030009120A (ko) 2003-01-29
ATE267447T1 (de) 2004-06-15
US20030002344A1 (en) 2003-01-02
JP4715024B2 (ja) 2011-07-06
CN1399280A (zh) 2003-02-26
JP2002334587A (ja) 2002-11-22
KR100446402B1 (ko) 2004-09-01
EP1256960B1 (en) 2004-05-19
DE60200498T2 (de) 2005-06-02
DE60200498D1 (de) 2004-06-24

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