CN115835936A - 用于封装制造的激光烧蚀系统 - Google Patents
用于封装制造的激光烧蚀系统 Download PDFInfo
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Abstract
本公开涉及用于制造半导体封装的系统和方法,并且更具体地,用于通过激光烧蚀在半导体封装中形成特征的系统和方法。在一个实施例中,本文描述的激光系统和方法可用于将用作半导体封装的封装框架的基板图案化,所述半导体封装具有穿过其形成的一个或多个互连和/或放置在其中的一个或多个半导体管芯。本文描述的激光系统可产生用于在基板或其他封装结构中形成特征的可调谐激光束。具体地,激光束的频率、脉冲宽度、脉冲形状以及脉冲能量可基于图案化特征的期望大小和其中形成图案化特征的材料来调节。激光束的可调性使得在具有受控深度和形貌的半导体基板和封装中快速且准确地形成特征。
Description
背景技术
技术领域
本公开的实施例大体上涉及用于制造半导体封装的系统和方法,并且更具体地涉及用于通过激光烧蚀在封装上形成特征的系统和方法。
相关技术说明
归因于半导体制造商增加产率并且增强电子装置和部件的效能的持续目的,已加大力度增加在给定大小的半导体基板上制造的半导体器件的密度。一种用于增加半导体组件中的半导体器件的密度的方法是堆叠半导体管芯(die)以产生三维多芯片模块(three-dimensional multichip module;3-D MCM)。形成3-D MCM通常要求在至少一个半导体管芯中产生从管芯的有源表面延伸到管芯的相对的后表面的通孔(即,过孔)。通孔用导电材料填充,所述导电材料提供半导体晶粒的后表面到另一半导体管芯的外部电气触点或3-DMCM的载体基板的互连。
常规地,蚀刻和激光烧蚀、或钻孔是频繁用于在半导体基板中形成通孔的两种方法。尽管通孔的激光钻孔具有与通孔的蚀刻相比快得多且位置和尺寸更加准确的优点,但钻孔区域的深度和形貌的精确控制尚未通过常规的激光钻孔实现。此外,激光能量通常低效地使用,因此导致低烧蚀速率。
由此,需要用于在具有受控深度和形貌的半导体基板中快速形成通孔的激光钻孔系统和方法。
发明内容
本公开大体上涉及用于通过激光烧蚀在封装上形成特征的系统和方法。
在一个实施例中,提供了一种用于将半导体器件激光图案化的系统。系统包括二极管泵浦固态激光源,所述二极管泵浦固态激光源具有平板增益介质并且被配置为生成脉冲激光束。激光源进一步具有以下特征:在约0.25mJ至约10mJ之间的脉冲能量,在约1ns至约4000ns之间的脉冲宽度以及在约1kHz至约200kHz之间的脉冲频率。系统进一步包括大角度电流计光学扫描仪和第一远心透镜,所述第一远心透镜具有横向尺寸基本上等于或大于约137mm的视场(field of view;FOV)以及约30mm至约500mm之间的工作距离。
在一个实施例中,提供了一种用于将半导体器件激光图案化的系统。系统包括二极管泵浦固态激光源,所述二极管泵浦固态激光源具有平板增益介质并且被配置为生成脉冲激光束。激光源进一步具有以下特征:在约0.25mJ至约10mJ之间的脉冲能量,在约1ns至约4000ns之间的脉冲宽度以及在约1kHz与约200kHz之间的脉冲频率。系统进一步包括大角度电流计光学扫描仪、第一远心透镜和可调节平台,第一远心透镜具有横向尺寸基本上等于或大于约137mm的视场(field of view;FOV)以及约30mm至约500mm之间的工作距离,可调节平台具有双向移动。平台的移动与电流计光学扫描仪的移动同步。
在一个实施例中,提供了一种用于将半导体器件激光图案化的系统。系统包括二极管泵浦固态激光源,所述二极管泵浦固态激光源具有红外(infrared;IR)平板增益介质并且被配置为生成脉冲激光束。激光源进一步具有以下特征:在约0.25mJ至约10mJ之间的脉冲能量,在约1ns至约4000ns之间的脉冲宽度以及在约1kHz至约200kHz之间的脉冲频率。系统进一步包括大角度电流计光学扫描仪、第一远心透镜和可调节平台,第一远心透镜具有横向尺寸基本上等于或大于约137mm的视场(field of view;FOV)以及约30mm至约500mm之间的工作距离,可调节平台具有双向移动并且被配置为从用于激光图案化的装载位置和用于校准电流计光学扫描仪的绝对位置平移。控制器与激光源、电流计光学扫描仪和可调节平台通信,并且被配置为调制激光源的脉冲能量、脉冲宽度以及脉冲频率。
附图说明
为了能够详细理解本公开的上述特征所用方式,可参考实施例进行对上文简要概述的本公开的更特定描述,所述实施例中的一些实施例在附图中示出。然而,将注意,附图仅示出示例性实施例,并且因此不被认为限制其范围,且可允许其他等同有效的实施例。
图1A示出了根据本公开的实施例的示例性结构化基板的示意性俯视图。
图1B示出了根据本公开的实施例的示例性封装结构的示意性横截面侧视图。
图2示出了根据本公开的实施例的示例性激光系统的示意图。
图3示出了根据本公开的实施例的脉冲激光束的瞬时激光功率的时间分布。
图4示出了根据本公开的实施例的图2的激光系统的视场的示意图。
图5A示意性示出了根据本公开的实施例的激光束的物理分布。
图5B示意性示出了根据本公开的实施例的激光束的物理分布。
图6示意性示出了根据本公开的实施例的图2的激光系统的校准机制的示意图。
为了便于理解,相同附图标记在可能的情况下已经用于标识图中共有的相同元件。可预期,一个实施例的元件和特征可有利地并入其他实施例中,而无需进一步叙述。
具体实施方式
本公开涉及用于制造半导体封装的系统和方法,并且更具体地,用于通过激光烧蚀在半导体封装中形成特征的系统和方法。在一个实施例中,本文描述的激光系统和方法可用于使将用作半导体封装的封装框架的基板图案化,所述半导体封装具有穿过其形成的一个或多个互连和/或设置在其中的一个或多个半导体管芯。本文描述的激光系统可产生用于在基板或其他封装结构中形成特征的可调谐激光束。具体地,激光束的频率、脉冲宽度、脉冲形状和脉冲能量可基于图案化特征的期望大小和其中形成图案化特征的材料来调节。激光束的可调性使得在具有受控深度和形貌的半导体基板和封装中快速且准确地形成特征。
如本文使用,术语“约”指与标称值的+/-10%的变化。将理解,此种变化可包括在本文提供的任何值中。
图1A示出了可通过本文描述的激光系统形成并且用作半导体封装的结构框架的示例性结构化基板100的示意性俯视图。将基板100示出为具有由多个基本圆柱形的通孔120围绕的四边形空腔110,统称为特征130。空腔110通常在基板100中形成,用于后续在其中放置和包封一个或多个半导体器件,诸如一个或多个主动半导体管芯或无源部件。通孔120在基板100中形成以提供通道或通路以供互连绕线穿过其中,因此实现互连与器件的直接电气耦合和/或在基板100的两侧上的再分布连接。
空腔110和通孔120可被激光图案化到具有任何期望的尺寸和及形状并且具有任何期望的数量和布置的基板100上。在某些实施例中,取决于在制造半导体封装期间待封闭和嵌入其中的一个或多个半导体器件的大小,每个空腔110具有在约1mm至约50mm之间(诸如约8.6mm)变化的横向尺寸。在一些实施例中,将空腔110的大小调节为具有基本上类似于待嵌入其中的半导体器件的横向尺寸。例如,每个空腔110被形成为都具有超过其中放置的半导体器件的横向尺寸达小于约150μm(诸如小于约120μm,诸如小于100μm)的横向尺寸。空腔110和待嵌入其中的半导体器件的大小变化减少,由此减少了在后续封装制造操作中所利用的间隙填充材料的量。
在某些实施例中,每个通孔120具有在约50μm至约200μm之间(诸如约90μm)变化的直径。在每个通孔120之间的最小节距125在约30μm至约170μm之间,诸如约40μm。通常,通孔120具有基本圆柱形形状,尽管还构想了其他形态。例如,每个通孔120可具有锥形形状或截头圆锥形状。
图1B示出了在空腔110内包装半导体器件140和在通孔120内电镀互连150由此形成封装101之后的基板100的示意性横截面侧视图。为了将半导体器件140嵌入空腔110内,在由绝缘层160包封之前将半导体器件140放置在空腔110内,所述绝缘层160在半导体器件140上层压和固化。绝缘层160可在基板100的表面到绝缘层160的外表面具有约20μm至约70μm之间的厚度,诸如约30μm。在一些实施例中,绝缘层160包括有机介电材料,诸如Ajinomoto堆积膜(Ajinomoto Build-up Film;ABF)和Mitsubishi BT膜。在某些示例中,绝缘层160是含有陶瓷填料的环氧树脂,诸如含有氧化硅(SiO2)粒子的环氧树脂。
绝缘层160的层压导致其介电材料流入并且填充在所放置的半导体器件140与基板100之间的空隙,并且流入通孔120中。因此,为了在层压绝缘层160之后穿过整个封装101形成用于互连150的通道或通路,过孔170(另一类型的特征130)被激光钻孔穿过通孔120内的绝缘层160的介电材料。通常,过孔170具有比通孔120更窄的尺寸,使得其激光钻孔导致过孔170被通孔120内的绝缘层160周向围绕。在一些实施例中,过孔具有在约20μm与约70μm之间(诸如约30μm)的直径。通过用介电材料围绕过孔170和后续电镀的互连150,可减少或消除在导电的硅基基板100与封装101中的互连150之间的电容耦合。然而,应当注意,过孔170还可仅部分穿过封装101形成、或形成在基板100中的通孔120外部位置中的绝缘层160内。例如,过孔170可在所嵌入的半导体器件140之上或之下形成,用于后续电镀待与其电气耦合的互连150。
图2示出了可用于在样品240(诸如半导体封装结构)中形成期望的特征130(例如,通孔120、过孔170和空腔110)的示例性激光系统200的示意图。激光系统200被配置为准确地烧蚀在各种封装结构和材料(诸如硅基基板和介电环氧树脂)中的高密度、窄分布的特征130。激光系统200通常包括激光源202、光学组件206、相机208和控制器210。在某些实施例中,激光系统200进一步包括平台212、光学工作台214、真空源216、碎屑收集器218和晶片嵌套220。
通常,激光源202是固态激光器,诸如具有平板增益介质的二极管泵浦固态激光器,所述固态激光器被配置为生成连续或脉冲激光束230以照射样品240,用于在样品240中形成一个或多个特征130。激光器平板可由任何合适的激光晶体材料形成,包括钕掺杂的钇铝石榴石(Nd:YAG;Nd:Y3Al5O12)、镱掺杂的YAG(Yb:YAG)、钕掺杂的原钒酸钇(Nd:YVO;Nd:YVO4)和变色石。在某些实施例中,激光器平板具有面泵浦几何形状。在某些实施例中,激光平板具有边缘泵浦几何形状。
在某些实施例中,激光源202在红外(IR)波长(例如,1064nm)下操作,用于在含硅基板(诸如具有在约100μm至约1500μm之间的厚度的硅基板)中形成特征130。在某些其他实施例中,激光源202在紫外(ultraviolet;UV)波长(例如,355nm)下操作,用于在介电材料(诸如聚合环氧树脂)中形成特征130。激光源202可生成具有在1kHz至200kHz之间的频率的脉冲激光束230。在一些实例中,激光源202被配置为在约1ns至5μs之间的脉冲持续时间下递送具有约0.10毫焦(mJ)至约10mJ之间的脉冲能量的脉冲激光束。在本文描述的实施例中,由激光源202生成的激光束230的频率、脉冲宽度和脉冲能量取决于正在被图案化的材料、正在被钻孔的特征130的期望横向尺寸以及正在被钻孔的特征130的深度而可调谐(例如,可调节的)。附加地,激光束230的移动速度、脉冲数量和束分布与大小也可调谐。
例如,对于穿过具有约100μm至约200μm之间的厚度的薄硅基基板100钻出具有约90μm的直径的过孔170,激光源202可被调谐为具有约5kHz至约100kHz之间的频率、约0.5mJ至约4.5mJ之间(例如,在约100kHz的频率下在约0.8mJ至约1.2mJ之间、以及在约5kHz的频率下在约3.5mJ至约4.5mJ之间)的脉冲能量、以及约100ns至约1200ns之间的脉冲宽度。例如,在约5kHz的频率和约600ns的脉冲宽度下,每激光脉冲移除在约70,000μm3至约110,000μm3之间的材料体积。在约100kHz的频率和约600ns的脉冲宽度下,每激光脉冲移除在约18,000μm3至约26,000μm3之间的材料体积。供应到每单位体积的材料的能量的量在约35J/mm3至约60J/mm3之间。
对于穿过具有约500μm至约1mm之间的厚度的厚硅基板500钻出具有约90μm的直径的过孔170,激光源202可被调谐为具有约5kHz至约30kHz之间的频率、约2mJ至约10mJ之间(例如,在约30kHz的频率下在约2mJ至约3.5mJ之间、以及在约5kHz的频率下在约7mJ至约10mJ之间)的脉冲能量、以及约1μs与约5μs之间的脉冲宽度。
对于钻出具有约8.6mm的横向尺寸和约50μm至200μm之间的深度的空腔110,激光源202可被调谐为具有约5kHz至约40kHz之间的频率、约0.5mJ至约4.5mJ之间的脉冲能量、以及约15ns至约600ns之间的脉冲宽度。例如,在约5kHz的频率和约600ns的脉冲宽度下,每脉冲移除约30,000μm3至50,000μm3的材料体积。在约5kHz的频率和约2μs的脉冲宽度下,每脉冲移除约220,000μm3至400,000μm3的材料体积。在约30kHz的频率和约2μs的脉冲宽度下,每激光脉冲移除约95,000μm3至约110,000μm3的材料体积。供应到所移除的每单位的材料的能量是约60J/mm3至75J/mm3。
在任何形式下,由激光源202产生的激光束230经由光学组件206朝向样品240投射(例如,传送)。光学组件206与激光源202光学耦合并且包括任何合适的图像投射装置(诸如F-θ透镜),用于朝向样品240导引激光束230,以用于特征130的激光图案化。在某些实施例中,光学组件206包括扫描仪232,诸如单轴或多轴大角度电流计光学扫描仪(即,电流计扫描仪)。在某些实施例中,扫描仪232是3轴电流计扫描仪,所述3轴电流计扫描仪具有在激光传播通路上从其上游设置的光学组件206的一个或多个透镜。在某些实施例中,扫描仪232是多边形扫描仪。术语“电流计扫描仪”指响应于来自控制器210的电子信号改变激光束230的投射或反射角度以使激光束230跨样品240扫掠的任何装置。通常,扫描仪232包括一个或多个可调节且机电控制的反射镜,以在激光钻孔期间跨样品240发散(例如,倍增)和/或转向激光束230。除了在样品240本身不机械平移的情况下使激光束230跨样品240的表面扫掠之外,同时利用扫描仪232实现在样品240中钻出多个特征130。扫描仪232可进一步包括用于促进本文描述的材料和结构的高密度钻孔的任何合适的特征(诸如数字伺服回馈、低漂移、快速动态响应和精确校准能力)。
在某些实施例中,光学组件206进一步包括一个或多个远心透镜234,所述一个或多个远心透镜具有涵盖样品240的整体的大视场。例如,出于热管理和光刻匹配的目的,光学组件206的远心透镜234可具有横向尺寸基本上等于或大于约137mm的视场(下文参考图4论述)。远心透镜234可具有约30mm至约60之间的明晰孔径并且被配置为接收具有约5mm至约20mm之间的光斑大小的激光束230。远心透镜234还可具有非常低的失真度(即,远心误差)和大工作距离。例如,远心透镜234可具有小于约5°的远心误差值,诸如小于约3°或约1°的远心误差值。在进一步的示例中,远心透镜234具有约30mm至约500mm之间的工作距离,因此实现在不需要Z方向高度调节的情况下在光学组件206与样品240之间的添加的聚焦深度。
在某些实施例中,两个或更多个远心透镜234可用于不同类型的材料的激光钻孔,每个远心透镜234专用于每种材料类型所利用的激光源202的波长范围。在此种实施例中,两个或更多个远心透镜234可具有彼此匹配的性质以实现穿过不同材料类型钻孔的特征130的对准。在一个示例中,第一远心透镜234可用于在硅基基板中的IR钻孔,诸如用于在上文描述的基板100中钻出通孔120。随后,在基板100上方层压绝缘层160之后,第二远心透镜234可用于在绝缘层160中的UV钻孔,诸如用于在基板100的通孔120内钻出过孔170。匹配两个远心透镜234的性质,由此实现过孔170在通孔120内的良好对准,从而实现其间被绝缘层160充分隔离并且减少或消除暴露基板100的机会。举例而言,可在不同的远心透镜234之间匹配的性质的示例包括焦距、场大小、最大远心误差、对应扫描仪232的每个镜的机械扫描角度、透镜长度、透镜直径、工作距离以及标称光斑大小。
在操作期间,由光学组件206投射的激光束230朝向设置在平台212上的样品240导引。通常,平台212为样品240提供接收表面,所述样品240可以是具有约156mm乘156mm或更大的横向尺寸的基板。平台212耦合到光学工作台214并且可由一对或多对轨道222支撑于其上。在某些实施例中,轨道222被布置为线性对,从而实现平台212在X方向和/或Y方向上的平移。例如,轨道222可包括线性和平行的磁通道。在某些其他实施例中,轨道222可具有非线性形状。在操作期间,平台212在X方向和/或Y方向上从装载位置移动到处理位置。通过利用一个或多个移送装置(未图示)将样品240装载和/或卸除到平台212上,从而实现对薄和/或易碎基板的自动处理。例如,样品240可利用具有伯努利(Bernoulli)型夹持器、步进梁、软起重器等的机械臂装载。随着平台212在处理方向上经过激光系统200的光学组件206下方,处理位置可指平台212的一个或多个位置。在某些实施例中,平台212的移动与扫描仪232的移动同步以实现在样品240的装载与卸除之间的有效转换和用于样品240的激光钻孔的激光束230的扫描。
编码器(未图示,诸如线性平台编码器)可进一步耦合到平台212,以便在激光钻孔工艺之前和/或期间将平台212和/或晶片嵌套220的位置信息提供到控制器210。附加地,样品240或校准基板(未图示)可包括一个或多个物理标记或特征242,诸如十字准线、圆圈、栅格状标记,或至少在其上表面上形成的穿过样品的基准,以用于对样品240进行视觉追踪和/或通过控制器210和指向平台212的相机208对激光系统200进行校准。例如,相机208可持续捕获样品240和平台212的图像,用于通过控制器210实时测量其X和Y横向位置坐标,因此促进样品240中的特征130的精确且准确的激光钻孔。
平台212和/或晶片嵌套220流体耦合到向其提供真空的真空源216,诸如专用真空泵。真空源216可包括节流阀(未图示)以调节所提供的真空量。在某些实施例中,真空源216用于在激光钻孔期间将样品240(诸如硅基基板或封装结构)吸附到平台212和/或晶片嵌套220并且从中提供平坦的钻孔表面。例如,真空源216可将样品240吸附到平台212和/或晶片嵌套220并且防止由来自激光钻孔工艺的温度升高导致的翘曲。在某些实施例中,真空源216提供约100mbar或更小的真空压力以将样品240吸附到平台212。
控制器210可包括中央处理单元(central processing unit;CPU)(未图示)、存储器(未图示)和支持电路(或I/O)(未图示)。CPU可以是任何形式的计算机处理器中的一种,所述计算机处理器在工业设置中用于控制各种处理和硬件(例如,激光源、光学组件、扫描仪、平台电机和其他硬件)并且监控工艺(例如,处理时间、平台和/或基板嵌套位置、以及基板位置)。存储器(未图示)连接到CPU,并且可以是容易获得的存储器中的一种或多种,诸如随机存取存储器(random access memory;RAM)、只读存储器(read only memory;ROM)、软盘、硬盘、或任何其他形式的数字存储(本地或远程)。软件指令和数据可在存储器内编码和存储以用于指示CPU。支持电路(未图示)还连接到CPU,用于以常规方式支持处理器。支持电路可包括常规的高速缓存、电源、时钟电路、输入/输出电路系统、子系统等。可由控制器读取的程序(或计算机指令)确定在样品240(如硅基基板)上可执行哪些任务。程序可以是由控制器可读取的软件并且可包括用于监控和控制(例如,在其间切换)例如激光束230的特性(频率、脉冲宽度、以及脉冲能量)和平台212和/或扫描仪204的移动的代码。
在某些实施例中,激光系统200进一步包括放置在其处理区域内并且流体耦合到真空源(诸如真空源216)的碎屑收集器218。碎屑收集器218向处理区域提供真空以产生循环气体的交叉流224,用于移除在样品240的激光烧蚀期间形成的碎屑。在某些实施例中,由碎屑收集器218提供的交叉流与激光系统200的处理方向226(例如,在处理期间平台212和/或扫描仪204的移动方向)反平行。
图3示出了可由控制器210编程的脉冲激光束(诸如激光束230)的瞬时激光功率的时间分布。尽管不旨在限于理论,据信在样品240的激光烧蚀工艺期间,所钻孔的材料熔融并且呈液态的熔融材料的一部分蒸发以形成热等离子体。此等离子体羽流(plume)倾向于对激光束不透明,并且因此激光束可被移送到所钻孔的材料的速率受“等离子体屏蔽”效应限制。然而,若激光是脉冲的并且激光束的脉冲能分布在较长的脉冲持续时间中,则可降低此等离子体屏蔽效应。由此,大量脉冲能量可用于熔融所钻孔的材料而不蒸发熔融材料,并且因此,与具有较短脉冲宽度的激光脉冲相比,激光钻孔的速率可通过施加具有较长脉冲宽度的脉冲激光来增强。
在一些实施例中,如图3所示,通过本领域中已知的方法,从激光源202发射的脉冲激光束230被编程为具有瞬时激光功率的矩形时间分布302。瞬时激光功率的矩形时间分布302确保适当加热速率以避免过热(即,蒸发熔融材料)并且增强激光钻孔的效率。在一些实施例中,如图3所示,通过本领域中已知的方法,从激光源202发射的脉冲的激光束230被编程为具有瞬时激光功率的椅形时间分布304,这可进一步增强激光钻孔的效率。如图3所示,与由具有典型Q切换时间分布306的激光脉冲钻孔的特征130相比,由具有矩形时间分布302的脉冲激光束230钻孔的特征130通常具有较直且较光滑的内壁。应当注意,激光源202被编程为产生可由控制器210选择(例如,在其间切换)的激光束230的多个脉冲宽度和/或时间形状。
如上文提及,超出熔融材料的需求的过量激光能量导致部分蒸发。因此,将激光束230的脉冲编程为具有朝向激光脉冲的后端加权的脉冲能量含量也可具有有益效果。在脉冲的早期部分,由于适当的加热速率的慢能量递送熔融较大体积的正在被钻孔的材料。这与具有典型Q切换时间分布306的激光脉冲的激光钻孔进行比较并形成对比,在典型Q切换时间分布306中,时间分布在脉冲中相对较早地达到峰值,从而当需要较低能量时(在脉冲的早期)一次性递送高能量。因此,在烧蚀羽流的过量蒸发和可能的离子化中消耗了较大部分的激光脉冲能量。对具有时间分布302或椅形时间分布304的激光脉冲进行编程允许在有效激光钻孔,而不在正在被钻孔的熔融材料蒸发的脉冲的早期消耗激光能量。在某些实施例中,在激光脉冲的前半部中的能量密度(A)与激光脉冲的总能量密度(B)相比的比率是在约0.2至约0.8之间(A/(A+B)=0.2-0.8)。
此外,本公开的发明者还发现,特征130(诸如通孔120和/或过孔170)的内壁的直度和光滑度与每激光脉冲的烧蚀深度极大地相关。烧蚀深度随着光学穿透深度、热穿透深度、以及激光通量(即,每单位面积的能量)增加。在本文描述的示例实施例中使用具有约1.0μm的波长的近IR激光的情况下,长脉冲宽度确保(与脉冲宽度的平方根成比例的)光穿透深度足够大。由此,激光脉冲能更均匀地分布在穿过基板的长距离上,以便同时加热和熔融厚基板材料,从而导致更有效的烧蚀。烧蚀的材料具有大动量(即,质量乘以速度)和更有方向性的运动,所述运动有利地从孔洞中射出而不在内壁上再次沉积,从而导致正在被钻孔的孔洞的较直且较光滑的内壁。这与由具有较短波长(诸如355nm的UV激光)和较短脉冲宽度的激光的强烈烧蚀相反,在强烈烧蚀中仅烧蚀基板的表面。在用具有此种短脉冲宽度的激光烧蚀的情况下,非常少量的材料被烧蚀,但作为过热的熔融物、蒸汽、和等离子体的混合物被爆炸性地烧蚀,使得从正在被钻孔的孔洞的方向性射出非常少并且在孔洞的内壁上引起再次沉积。
图4示出了远心透镜234的钻孔视场(field of view;FOV)402(以虚线图示)关于各自具有约156mm或更小的横向尺寸D1、D2的基板400的示意图。如先前描述,远心透镜234的钻孔FOV 402大于将被激光钻孔的样品(诸如基板400)的横向面积。较大钻孔FOV 402允许在没有基板400的(诸如通过平台212的)机械运动的情况下由扫描仪232扫描整个基板400由此,不需要拼接基板400的多个FOV或区段,从而实现更牢固的对准和较短的激光钻孔循环时间,并且被钻孔到基板400中的所有特征130可在与远心透镜234的表面正交的定向上形成。
图4还示出了关于在封装制造期间在基板400的后续处理步骤中利用的多个较小光刻FOV 404的远心透镜234的钻孔FOV 402。如图所示,钻孔FOV 402跨所有光刻FOV 404延伸,并且因此消除在激光钻孔期间形成的任何误定位的特征130上方的光刻印刷的发生。在某些实施例中,钻孔FOV 402是光刻FOV 404的定量倍数,因此促进适当对准。因此,在处理基板400期间在钻孔FOV 402与光刻FOV 404之间不需要匹配。
远心透镜234进一步实现在没有基板400的机械平移的情况下跨基板400的整个表面执行并且重复即时(on-the-fly)钻孔循环。在即时钻孔期间,脉冲激光束230被扫描仪232跨基板400的表面扫略以在其上的不同位置处钻出特征130的子集。在特征130的每个位置和/或子集处,在扫描仪232将激光束230平移到钻孔循环中的下一位置之前,可每特征130递送激光束230的一个或多个脉冲。在完成钻孔循环(例如,在其每个位置处每特征130递送一个或多个脉冲)之后,激光束230返回到钻孔循环的初始位置以每特征130递送一个或多个附加脉冲,并且重复钻孔循环。通常,两个或更多个钻孔循环(诸如五个或更多个钻孔循环)用于穿过样品(诸如基板400)的厚度形成完整的特征130。激光脉冲跨基板400的表面的循环实现在递送激光脉冲之间冷却每个钻孔位置,因此避免在基板400的已经加热的表面上钻孔,这可经由上文描述的“等离子体屏蔽”效应导致过热并且降低钻孔效率。在远心透镜234具有大于基板400的横向面积的FOV 402的情况下,在不必机械移动基板400的情况下执行整个钻孔循环,这可能增加样品失准或漂移的风险并且显著增加钻孔循环时间。
在一些实施例中,在即时钻孔循环工艺中,脉冲激光束230与用于高速(例如,以约10m/s的速度)束定位的电流计扫描仪的扫描运动同步地定位并且重复地在特征130的子集上方定位。在任何一个特征130上的有效钻孔重复速率近似为激光重复速率除以正在被钻孔的特征130的总数。在一些实施例中,特征130的子集包括在即时钻孔循环期间由同步钻孔所钻出的在约1000个与约2,500,000个之间的特征130。
除了提供较大视场402之外,远心透镜234还提供增强的(例如,延伸的)激光束230的聚焦深度。图5A和图5B示出了如分别由远心透镜234和标准中继透镜500投射的穿过具有第一厚度T1和第二厚度T2的基板400的激光束230的物理分布(即,形状)。如图5A所示,远心透镜234使激光束230在远场中的束发散最小化,并且在较大距离上增加其峰强度,因此实现穿过基板400的每个厚度T1和T2的具有均匀尺寸LB1的特征130的一致钻孔。由于在不同样品之间不需要聚焦调整,这在具有甚至最轻微厚度变化的样品中大阵列的窄通孔120和/或过孔170的钻孔期间,以及在具有不同厚度的不同样品中将特征图案化的钻孔工艺期间是特别有利的。在图5B中,中继透镜500的有限聚焦深度导致束收敛和发散,从而导致激光束230的峰值强度在其传播路路径上变化。束分布和强度的变化导致在钻孔到基板400的每个厚度T1和T2中的特征130之间的尺寸LB2的尺寸不均匀性。
图6标出了示出了由激光系统200用于校准和对准用于激光钻孔的扫描仪232的封闭回路校准机制的示意图。如图所示,激光系统200可将校准板600装载到平台212和/或晶片嵌套200上并且以栅格状或十字准线标记602将校准板600的顶表面激光图案化。取决于将在激光图案化期间形成的特征130的数量,栅格状或十字准线标记602可具有任何合适的精细度。在标记校准板600之后,校准板600经由平台212机械平移到绝对位置,并且校准板600的X和Y横向位置坐标由控制器210使用相机208和一个或多个线性平台编码器测量。标记602的实际位置与标称(例如,期望)位置604比较(例如,评估),并且由扫描仪232对激光束230的更新轨迹通过控制器210内插。经校正的指令可自动编码和存储在控制器210的存储器内,以用于在金逸的校准循环和/或激光钻孔工艺中指示CPU。在自动产生经校正的指令之后,可重复校准机制,直到量测误差程度超过潜在的校正改进的程度,之后可执行激光钻孔工艺。在某些实施例中,上文描述的校准机制实现具有小于约5μm的偏差的实际特征与标称位置的对准。
本文公开的系统和方法包括用于在半导体封装装置中形成特征(如通孔及空腔)的激光烧蚀系统和方法。本文描述的激光烧蚀系统可基于图案化特征的期望大小和其中形成图案化特征的材料来产生具有期望的频率、脉冲宽度、脉冲形状和脉冲能量的可调谐激光束。激光束的可调性提供在具有受控深度和形貌的半导体封装装置结构中庞大阵列的高密度特征的快速且准确的钻孔,因此能够形成具有高芯片或管芯与封装体积比率的薄形状因素的封装。由此,本文描述的系统和方法实现更大的I/O比例以满足不断增加的人工智能(artificial intelligence;AI)和高效能计算(high performance computing;HPC)的带宽和功效需求。
尽管上述内容涉及本公开的实施例,但本公开的其他和进一步实施例可在不脱离其基本范围的情况下设计,并且其范围由以下权利要求确定。
Claims (20)
1.一种用于将半导体器件激光图案化的系统,包括:
二极管泵浦固态激光源,所述二极管泵浦固态激光源被配置为生成脉冲激光束,所述激光源包括平板增益介质,所述激光源进一步具有以下特征:
脉冲能量,所述脉冲能量在约0.25mJ至约10mJ之间;
脉冲宽度,所述脉冲宽度在约1ns至约4000ns之间;以及
脉冲频率,所述脉冲频率在约1kHz至约200kHz之间;
大角度电流计光学扫描仪;以及
第一远心透镜,所述第一远心透镜具有横向尺寸基本上等于或大于约137mm的视场(FOV),所述第一远心透镜具有约30mm至约500mm之间的工作距离。
2.如权利要求1所述的系统,其特征在于,所述激光源是红外(IR)激光源。
3.如权利要求1所述的系统,其特征在于,所述第一远心透镜具有小于约5°的远心误差值。
4.如权利要求1所述的系统,进一步包括第二远心透镜,所述第二远心透镜具有横向尺寸基本上等于或大于约137mm的FOV和约30mm至约500mm之间的工作距离。
5.如权利要求4所述的系统,其特征在于,所述第一远心透镜专用于IR波长并且所述第二远心透镜专用于UV波长。
6.如权利要求5所述的系统,其特征在于,所述第一远心透镜和所述第二远心透镜的最大远心误差和标称光斑点大小基本上相同。
7.如权利要求1所述的系统,进一步包括与所述激光源和所述电流计光学扫描仪通信的控制器,所述控制器被配置为调制所述激光源的所述脉冲能量、所述脉冲宽度和所述脉冲频率。
8.如权利要求7所述的系统,其特征在于,所述控制器进一步被配置为调制所述激光源的脉冲形状。
9.如权利要求8所述的系统,所述激光源的所述脉冲形状是矩形或椅形。
10.如权利要求7所述的系统,进一步包括设置在线性和平行轨道上的可调节平台。
11.如权利要求10所述的系统,其特征在于,所述可调节平台被配置为接收具有约156mm或更大的横向尺寸的基板。
12.如权利要求10所述的系统,其特征在于,所述可调节平台耦合到线性平台编码器,以将平台的位置信息提供到所述控制器。
13.如权利要求12所述的系统,进一步包括指向所述可调节平台并且与所述控制器通信的相机。
14.如权利要求13所述的系统,其中所述相机、所述可调节平台和所述控制器形成用于所述电流计光学扫描仪的位置校准的封闭回路校准系统。
15.如权利要求1所述的系统,进一步包括用于在所述系统的处理区域中产生循环气体的交叉流的碎屑收集器。
16.一种用于将半导体器件激光图案化的系统,包括:
二极管泵浦固态激光源,所述二极管泵浦固态激光源被配置为生成脉冲激光束,所述激光源包括平板增益介质,所述激光源进一步具有以下特征:
脉冲能量,所述脉冲能量在约0.25mJ至约10mJ之间;
脉冲宽度,所述脉冲宽度在约1ns至约4000ns之间;以及
脉冲频率,所述脉冲频率在约1kHz与约200kHz之间;
大角度电流计光学扫描仪;
第一远心透镜,所述第一远心透镜具有横向尺寸基本上等于或大于约137mm的视场(FOV),所述远心透镜具有约30mm至约500mm之间的工作距离;以及
可调节平台,所述可调节平台具有双向移动,所述平台的所述移动与所述电流计光学扫描仪的移动同步。
17.如权利要求16所述的系统,其特征在于,所述第一远心透镜具有小于约5°的远心误差值。
18.如权利要求17所述的系统,进一步包括具有横向尺寸基本上等于所述第一远心透镜的FOV的第二远心透镜。
19.如权利要求18所述的系统,其特征在于,所述第一远心透镜专用于IR波长并且所述第二远心透镜专用于UV波长。
20.一种用于将半导体器件激光图案化的系统,包括:
二极管泵浦固态激光源,所述二极管泵浦固态激光源被配置为生成脉冲激光束,所述激光源包括红外(IR)平板增益介质,所述激光源进一步具有以下特征:
脉冲能量,所述脉冲能量在约0.25mJ至约10mJ之间;
脉冲宽度,所述脉冲宽度在约1ns至约4000ns之间;以及
脉冲频率,所述脉冲频率在约1kHz至约200kHz之间;
大角度电流计光学扫描仪;
第一远心透镜,所述第一远心透镜具有横向尺寸基本上等于或大于约137mm的视场(FOV),所述远心透镜具有约30mm至约500mm之间的工作距离;
可调节平台,所述可调节平台具有双向移动,所述平台被配置为从装载位置平移到用于激光图案化的处理位置和用于校准所述电流计光学扫描仪的绝对位置;以及
控制器,所述控制器与所述激光源、所述电流计光学扫描仪以及所述可调节平台通信,所述控制器被配置为调制所述激光源的所述脉冲能量、所述脉冲宽度以及所述脉冲频率。
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- 2021-06-23 WO PCT/US2021/038690 patent/WO2022020053A1/en active Application Filing
- 2021-06-23 CN CN202180048402.7A patent/CN115835936A/zh active Pending
- 2021-06-23 JP JP2023504680A patent/JP2023535087A/ja active Pending
- 2021-06-23 EP EP21845570.7A patent/EP4185437A1/en active Pending
- 2021-07-16 TW TW110126220A patent/TW202204078A/zh unknown
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2023
- 2023-05-09 US US18/195,234 patent/US20230282498A1/en active Pending
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Publication number | Priority date | Publication date | Assignee | Title |
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CN116140832A (zh) * | 2023-04-20 | 2023-05-23 | 深圳市岑科实业有限公司 | 智能电感线圈激光切割系统自动矫正精度的方法及系统 |
CN116140832B (zh) * | 2023-04-20 | 2023-07-04 | 深圳市岑科实业有限公司 | 智能电感线圈激光切割系统自动矫正精度的方法及系统 |
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JP2023535087A (ja) | 2023-08-15 |
US20230282498A1 (en) | 2023-09-07 |
US20220028709A1 (en) | 2022-01-27 |
KR20230028441A (ko) | 2023-02-28 |
EP4185437A1 (en) | 2023-05-31 |
TW202204078A (zh) | 2022-02-01 |
US11676832B2 (en) | 2023-06-13 |
WO2022020053A1 (en) | 2022-01-27 |
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