CN109752486A - 气体传感器包 - Google Patents

气体传感器包 Download PDF

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Publication number
CN109752486A
CN109752486A CN201811309717.9A CN201811309717A CN109752486A CN 109752486 A CN109752486 A CN 109752486A CN 201811309717 A CN201811309717 A CN 201811309717A CN 109752486 A CN109752486 A CN 109752486A
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China
Prior art keywords
chamber
packet
integrated device
gas
device chip
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Pending
Application number
CN201811309717.9A
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English (en)
Inventor
O·J·基尔塞
R·迈吉汉
A·伯杜克
D·P·麦考利夫
R·J·斯皮尔
B·考莱伊
B·J·考费伊
G·布兰尼
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Analog Devices International ULC
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Adi Semiconductor Unlimited Co
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Application filed by Adi Semiconductor Unlimited Co filed Critical Adi Semiconductor Unlimited Co
Publication of CN109752486A publication Critical patent/CN109752486A/zh
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/406—Cells and probes with solid electrolytes
    • G01N27/407—Cells and probes with solid electrolytes for investigating or analysing gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
    • B81B7/0051—Packages or encapsulation for reducing stress inside of the package structure between the package lid and the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
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    • B81B7/0032—Packages or encapsulation
    • B81B7/0061—Packages or encapsulation suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
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    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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    • B81C1/00269—Bonding of solid lids or wafers to the substrate
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    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
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    • G01N27/404—Cells with anode, cathode and cell electrolyte on the same side of a permeable membrane which separates them from the sample fluid, e.g. Clark-type oxygen sensors
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    • B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
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Abstract

公开了气体传感器包。气体传感器包可包括限定第一腔室和第二腔室的壳体。电解质可设置在第一腔室中。气体入口可以在所述第二腔室和外部环境之间提供流体连通。气体入口可被配置为允许气体从所述外部环境进入所述第二腔室。集成器件芯片可安装到壳体。集成器件芯片可包括配置为检测气体的传感元件。集成器件芯片可具有暴露于所述第一腔室的第一侧和暴露于所述第二腔室的第二侧，所述第一侧与所述第二侧相对。

Description

气体传感器包
相关申请的交叉引用
本申请要求2017年11月6日提交的美国临时专利申请No.62/582,229的优先权，其全部内容通过引用整体并入本文并用于所有目的。
技术领域
本领域涉及气体传感器包。
背景技术
气体传感器装置用于许多行业以检测气体的存在和识别气体。例如，在汽车工业中，在车辆运行期间检测和/或识别各种类型的气体可能是重要的。在石化或其他工业应用中，检测和/或识别气体也很重要。然而，传统的气体传感器装置昂贵、大、并且难以与表面安装技术集成。因此，仍然需要改进的气体传感器。
发明内容
在一个方面中，公开气体传感器包。气体传感器包括限定第一腔室和第二腔室的壳体。气体传感器还包括所述第一腔室中的电解质。气体传感器还包括气体入口和集成器件芯片。气体入口被配置为在所述第二腔室和外部环境之间提供流体连通。气体入口被配置为允许气体从所述外部环境进入所述第二腔室。集成器件芯片安装到壳体。集成器件芯片包括传感器部分，该传感器部分具有配置为检测气体的传感元件。集成器件芯片的传感器部分具有至少部分地暴露于所述第一腔室的第一侧和至少部分地暴露于所述第二腔室的第二侧。所述第一侧与所述第二侧相对。
在一个实施方案中，传感元件包括铂黑、钌黑、铱黑、碳和金中的至少一种。
在一个实施方案中，传感元件至少部分地设置在所述第二腔室中。
在一个实施方案中，包还包括在所述气体入口上设置的一个或多个过滤器。
在一个实施方案中，包还包括安装到所述集成器件芯片的芯片帽。芯片帽至少部分限定第一腔室。
在一个实施方案中，电解质包括硫酸或固体电解质。
在一个实施方案中，集成器件芯片部分嵌入模制化合物中。气体入口可至少部分通过所述模制化合物的孔限定。
在一个实施方案中，集成器件芯片至少部分将所述第一腔室与所述第二腔室密封。
在一个实施方案中，包还包括包基板。集成器件芯片安装在所述包基板上。包基板可包括开口。第二腔室可包括开口。包还可包括使所述集成器件芯片从所述包基板垂直偏移的支架结构。支架结构可包括侧向通道，在所述第二腔室和由所述壳体限定的外部腔室之间提供流体连通。第二腔室可设置在所述集成器件芯片和所述包基板之间。第一腔室可设置在集成器件芯片和包基板之间。包还可包括安装到所述包基板并用模制化合物包覆成型的附加集成器件芯片。集成器件芯片可在所述附加集成器件芯片上安装到由所述模制化合物限定的芯片架。第二腔室可设置在集成器件芯片和芯片架之间，附加集成器件芯片可以从集成器件芯片横向偏移。
在一个实施方案中，集成器件芯片包括多个通道，从集成器件芯片的第一侧延伸到集成器件芯片的第二侧。
在一个实施方案中，包包括包基板和安装到所述包基板的包盖。第二腔室可以至少部分由包基板和包盖限定。第二腔室可以至少部分限定在包基板和集成器件芯片之间。
在一个实施方案中，第二腔室包括侧向通道。
在一个实施方案中，集成器件芯片包括处理器部分，处理器部分和传感器部分集成。
在一个方面中，公开气体传感器包。气体传感器包包括限定第一腔室的壳体和所述第一腔室中的电解质。气体传感器包还包括气体入口，被配置为允许气体从外部环境进入气体传感器包。气体传感器包还包括安装到壳体的集成器件芯片。集成器件芯片包括一个或多个气体通道和传感器部分，所述传感器部分设置在所述一个或多个气体通道附近并与所述气体通道流体连通。集成器件芯片具有配置为检测气体的传感元件。集成器件芯片的传感器部分具有至少部分暴露于所述第一腔室的第一侧和与所述第一侧相对的第二侧。气体通过一个或多个气体通道以撞击在传感元件上
在一个实施方案中，壳体还限定第二腔室。传感器部分的第二侧下可以至少部分暴露于第二腔室。
在一个实施方案中，包还在气体通路中的气体入口和传感器部分之间包括一个或多个过滤器。
在一个方面中，公开气体传感器包。气体传感器包包括用于限定第一腔室的壳体构件。壳体构件具有气体入口。气体传感器包还包括第一腔室中的电解质。气体传感器包还包括安装到壳体的集成器件芯片构件。集成器件芯片包括传感器部分，该传感器部分具有配置为检测气体的传感元件。传感元件具有至少部分暴露于第一腔室的第一侧和与第一侧相对的第二侧。
在一个实施方案中，壳体构件还限定第二腔室。
附图说明
现在将参考以下附图描述实施例，附图是作为示例而非限制提供的。
图1是根据一个实施例的气体传感器包的示意性侧剖视图，该气体传感器包具有至少部分地限定第一和第二腔室的包体，以及第一盖和第二盖。
图2是根据另一实施例的气体传感器包的示意性侧剖视图，该气体传感器包具有至少限定第一腔室的芯片帽。
图3是根据另一个实施例的气体传感器包的示意性侧剖视图，其中模制材料设置在芯片帽上。
图4是根据另一个实施例的具有包基板的气体传感器包的示意性侧剖视图，该包基板具有安装到包基板的第二集成器件芯片。
图5是根据另一个实施例的在外部腔室中具有第一和第二腔室的气体传感器包的示意性侧剖视图。
图6是根据另一个实施例的具有传感器芯片的气体传感器包的示意性侧剖视图，该传感器芯片具有穿透基板通孔。
图7是根据另一实施例的具有用于传感器芯片的芯片架的气体传感器包的示意性侧视横截面图。
图8是传感器模具的示意性侧剖视图，其中传感器部分和处理器部分被限定在共同的整体结构中。
图9是根据另一个实施例的具有盖子的气体传感器包的示意性侧剖视图，该盖子限定了用于传感器芯片和其他装置或模具的壳体。
图10是根据另一实施例的气体传感器包的示意性侧剖视图，该气体传感器包具有由盖限定的壳体外部的其他装置或模具。
图11是根据另一实施例的气体传感器包的示意性侧剖视图。
图12是根据另一个实施例的具有盖子的气体传感器包的示意性侧剖视图，该盖子限定了用于传感器芯片和其他装置或模具的壳体。
图13是根据另一实施例的气体传感器包的示意性侧剖视图，该气体传感器包具有由盖限定的壳体外部的其他装置或模具。
具体实施方式
本文公开的各种实施方案涉及气体传感器包。例如，本文公开的气体传感器包能够使传感装置比传统传感器更小且更便宜。在各种实施例中，气体传感器包可以包括限定第一腔室和第二腔室的壳体。可以在第一腔室中提供电解质。气体入口可以在所述第二腔室和外部环境之间提供流体连通。气体入口可以被配置为允许气体从所述外部环境进入所述第二腔室。集成器件芯片可以安装到壳体上。集成器件芯片可以包括电流传感器。集成器件芯片可以包括配置成检测气体的传感元件。集成器件芯片可以具有暴露于第一腔室的第一侧和暴露于第二腔室的第二侧。第一侧可以与第二侧相对。
图1是根据一个实施例的气体传感器包1的示意性侧剖视图。气体传感器包1可以包括壳体10，壳体10包括第一和第二腔室12、14，如图1所示。壳体10可以由模制的包体16限定，该包体16至少部分地界定第一和/或第二腔室12、14。例如，如图1所示，包体16可包括非导电模制化合物18。如图1所示，包体16可包括双侧结构。第一盖子20可以附接(例如，通过热塑性焊接或诸如热压接合的连接技术)到包体16以部分地限定第一腔室12。第二盖子22可以被附接(例如，通过热塑性焊接或诸如热压粘合的连接技术)到包体16，以部分地限定第二腔室14。
集成器件芯片24可以物理地安装到包体16中限定的壁架26上。模具24可以设置在第一和第二腔室12、14之间。管芯附接或密封剂化合物28可以将管芯24机械地附接到壁架26。集成器件芯片24可包括电流传感器。集成器件芯片24可以包括在管芯24的第一侧30上的传感元件34。例如，传感元件34可以粘附或层压到管芯24上。在各种实施例中，传感元件34可以包括铂黑或电化学应用中使用的其他类型的电极。在一些实施例中，传感元件34可包括钌黑、铱黑、碳、金黑或金。例如，在各种实施方案中，铂黑可用于感测一氧化碳和烃，例如醇等。在各种实施方案中，烧结的铂或铱可用于感测氢气。金黑可用于检测含硫化合物，例如硫化氢。在一些实施方案中，稳定的铱可用于检测气体，例如氨和肼。
在一些实施例中，传感元件34可以电连接到管芯24上的相应接触垫(未示出)。在其他实施例中，传感元件34可以形成为管芯24的一部分。在各种实施例中，传感感元件34可以在毛细管或通道上印刷在模具24的传感器部分上。在一些实施例中，帽可以附接在传感元件34上，例如，以保护传感元件34。此外，在一些实施例中，管芯24可包括将有源电路连接到传感元件34的其他有源电路和电互连，用于预处理由传感元件检测的信号。如图1所示，管芯24的第二侧32上的接触焊盘可以将有源电路或互连电连接到包1的引线36，例如，通过引线接合38。引线接合38可以包括金或铝键合线，并且可以在室温下键合到管芯24的焊盘上，以确保不超过传感元件的温度极限。密封剂41或球形顶部可以施加在引线接合38上以保护引线接合38和/或电绝缘引线接合38。在其他实施例中，管芯24可以倒装芯片安装到基板或包体上，例如，通过焊球或各向异性导电膜(ACF)，但与引线键合相比，这种布置可能引入额外的成本。
如图1所示，电解质40可以设置在包1的第一腔室12中。电解质40可以包括用于气体传感应用的任何合适类型的电解质，包括例如酸，例如包括硫酸(例如，40％硫酸溶液)、碱、盐、有机电解质、凝胶电解质、聚合物电解质等的溶液。在其他实施方案中，电解质40可包含其他类型的液体(包括凝胶)或固体电解质。在各种实施方案中，液体和固体的组合可用于电解质40，例如水和导电聚合物，例如磺化四氟乙烯基含氟聚合物-共聚物(例如，Duafion，由DuPont USA制造)。例如，在一些实施例中，如上所述，第一盖子20可以连接到包体16的下部。电解质40可以通过开口42流入第一腔室12。可以在开口42上提供密封帽44，以密封第一腔室12中的电解质40。在图1中，传输感元件34可暴露于电解质40(例如，接触电解质)和/或至少部分地设置在第一腔室12中。
第一腔室12还可包括芯吸材料46，以确保电解质40接触传感元件34。芯吸材料46可包括任何合适类型的材料，包括例如第一腔室12中的玻璃纤维垫。在各种实施例中，芯吸材料46可包括设置在第一腔室12中的分立部件。在一些实施例中，芯吸材料46可以包括开孔泡沫，其可以以流体形式分配以填充第一腔室12。例如，图1中所示的凸起48可以与芯吸材料46配合以向上挤压或拉伸电解质40以保持与传感元件34的接触。在没有芯吸材料46的情况下，传感元件34下方可能存在气隙，使得电解质40不会沿其区域接触传感元件34。芯吸材料46还可以防止在密封帽42的分配和封盖期间电解质40的飞溅。因此，提供芯吸材料46可以通过保持电解质40和传感元件34之间的接触来改善气体传感器包1的感测能力。
第二腔室14可以通过气体入口50与外部环境流体连通。如图1所示，可以在气体入口50上提供一个或多个过滤器52。过滤器52可包括机械屏障，其构造成防止碎屑进入第二腔室14。在一些实施例中，过滤器52可以附加地或替代地配置成过滤掉有机化合物或其他不期望的污染物。图1中示出了两个过滤器52，但是可以在第二腔室12和外部环境之间的气体入口50上提供任何合适数量和类型的过滤器。过滤器52可以在第二盖子22连接到包体16之前或之后提供。过滤器52可以是任何合适类型的过滤器，例如石墨过滤器、聚四氟乙烯(PTFE)防凝结过滤器或灰尘过滤器。
在操作期间，气体可通过气体入口50和过滤器52进入第二腔室。如图1所示，模具24的第二侧32暴露于第二腔室14并且暴露于进入第二腔室14的气体。模具24可包括一个或多个通道54或通过模具24形成的毛细管，例如，从暴露于第二腔室14的模具24的第二侧32到模具24的第一侧30，传感元件34安装或以其他方式设置在第一侧30上。如图1所示，传感元件34可以设置在模具24的第一侧30的一部分上，并且模具24的第一侧30的另一部分可以暴露于第一腔室12中的电解质40。因此，模具24可以包括耐电解质40的材料(例如，酸)，使得电解质40不会损坏模具24。因此，模具24的第一侧30可以包括“湿的”管芯24的侧56，管芯24的第二侧32可以包括管芯24的“干”侧58。在各种实施例中，管芯24可以包括诸如硅的半导体材料。重要的是，管芯附着材料或密封剂与集成器件芯片24配合，可以将第一腔室12与第二腔室14密封和/或流体分离，使得电解质40不会从第一腔室12进入第二腔室14。模具24可以用作第一腔室12中的电解质40与第二腔室14中的气体之间的屏障。
通过通道54的气体可以在传感元件34的湿侧56的相对侧上接触传感元件34的干侧58，其与电解质40接触。在一些实施例中，气体可以扩散到集成器件芯片24的传感元件34中(例如，电流传感器芯片)并且集成器件芯片24可以产生电流，例如，由于第一腔室12中的传感电极34和电解质40之间的界面处的气体的化学反应。所产生的电流的大小与传感元件34附近的气体浓度成比例。有利地，图1的实施例可以使得能够生产较小规模的气体传感器包，与传统的气体传感器相比，它简单且便宜。
在一些实施例中，管芯24可包括从管芯24的第一侧30穿过基板通孔(TSV)，其接收传感元件34到与第一侧30相对的第二侧32，例如，如图6和9-11中所示。第二侧上的TSV可以连接到引线键合38以与引线36电连接。
图2是根据另一实施例的气体传感器包1的示意性侧剖视图。除非另有说明，否则图2的组件可以与图1中相同参考的组件相同或大致相似。此外，包1可以大致类似于图1的包1操作，因为气体可以进入气体入口50并且从第二腔室14并且通过通道54传递到第一腔室12。可以测量由传感器芯片24产生的电流，并且测量的电流可以代表一种或多种目标气体种类。例如，与图1一样，气体传感器包1可包括第一腔室12，在第一腔室12中设置有电解质40，和第二腔室14，第二腔室14通过气体入口50与外部环境流体连通，以及一个或多个过滤器52，其设置在气体入口50上。另外，与图1的实施例不同，包体16和包盖20限定第一腔室12，在图2的实施例中，芯片帽60可以附接到或形成有集成器件芯片24。芯片帽60可以限定比图1的实施例中更小的第一腔室12，这可以有利地实现更小的气体传感器包。
此外，在图2的实施例中，包体16可以通过薄膜辅助模塑(FAM)围绕所示部件模制，其结合了大体积模制工艺和离开开口42的能力，如图2所示。例如，在一些实施例中，集成器件芯片24、芯片帽60和引线36可以使用FAM模制，并且通过在芯片帽60的底部上设置尖端或插入件，开口42可以保持打开，使得开口42不是模制的。在模制之后，电解质40(例如，硫酸)可以流过开口42并进入第一腔室12。密封帽44(或密封剂或粘合剂)可以设置在芯片帽60中的开口上，以密封第一腔室12中的电解质40，例如，通过合适的密封剂或粘合剂。因此，有利地，图2的气体传感器包1可以在任何合适的温度下利用低成本的模制技术和材料，因为电解质40可以在模制之后提供，但是通过省略用于第一腔室12的单独的盖子附件来简化组装。此外，模具24可以由包体16支撑并且至少部分地嵌入包体16中，该包体16可以由模制化合物18限定。在各种实施例中可能没有单独的管芯焊盘。例如，如图2所示，模具24可以由包体16和引线36的远端部分支撑。包体16可以至少部分地嵌入模具24的端部以便支撑模具24。在一些实施例中，模具24可以粘附到引线36的远端部分。此外，如图2所示，模制化合物18可以限定为包括用于接收过滤器52的凹槽。在一些实施例中，过滤器52可以与包体16的顶表面齐平或在其下方。在一些实施例中，一个或多个过滤器52可以在包体16的顶表面上方突出。
此外，在图2的实施例中，模具24和引线36之间的电连接(例如，引线接合38)可以用模制化合物18覆盖，该模制化合物18至少部分地限定包体16。因此，可以提供对引线键合38的保护和/或引线键合38的电隔离，而没有图1中所示的单独的密封剂41或球形顶部。
图3是根据另一实施例的气体传感器包1的示意性侧剖视图。除非另有说明，否则图3的组件可以与图1-2中相同参考的组件相同或大致相似，并且可以以大致类似的方式操作或起作用。与图2的实施例不同，其中密封帽44可以在模制之前或之后用电解质40填充第一腔室12之后施加，在图3中，在模制包体16之前，电解质40可以设置在第一腔室12中。例如，至少部分地由芯片帽60限定的第一腔室12可以在晶片级填充电解质40，并且密封帽44可以施加在芯片帽60中的开口42上。模制化合物18可以设置在图3中的芯片帽60和密封帽44上。因此，在一些实施例中，芯片帽60、电解质40和密封帽44可以应用于具有多个集成器件区域的晶片。可以将集成器件区域单个化以限定多个管芯，其中在分割之前提供电解质40。在其他实施例中，电解质40可以在切割晶片之后设置在芯片帽60腔室中。
图4是根据另一实施例的气体传感器包1的示意性侧剖视图。除非另有说明，否则图4的组件可以与图1-3中相同参考的组件相同或大致相似，并且可以以大致类似的方式操作或起作用。例如，如图1-3所示，图4的包可以包括在集成器件芯片24的相对侧上的第一腔室12和第二腔室14。此外，包1可包括模制的包体16(其可通过FAM技术形成)。包体16可以施加在包基板62上或与包基板62耦合，基板62可以包括层压基板，例如印刷电路板(PCB)基板、陶瓷基板或任何其它合适类型的基板。包基板62可以包括开口64，开口64可以至少部分地限定气体入口50。如图4所示，开口64和气体入口50可以设置在气体传感器包1的底侧68上。一个或多个过滤器52可以通过开口64连接到包基板62。第二腔室14可以通过气体入口50与外部环境中的气体流体连通，可以至少部分地由包基板62中的开口64限定。集成器件芯片24可以设置在开口64和第二腔室14上方。
盖子20可以连接到或嵌入包体16中。例如，如上所述，FAM技术可以在包体16的模制化合物18中形成开口或空隙65。盖子20可以连接到开口内的包体16或模制化合物18中限定的空隙。盖子20和包体16可以限定外部腔室70，集成器件芯片24设置在外部腔室70中。芯片帽60可以在传感元件34上方安装到集成器件芯片24，以限定第一腔室12，电解质40设置在第一腔室12中。在一些实施例中，芯片帽60可以预先填充有电解质40，并且密封帽44可以在晶片级组装期间密封芯片帽60的第一腔室12。在其他实施例中，芯片帽60的第一腔室12可以在包装期间填充电解质40，例如，在将模具24安装到包基板62之后但在应用盖子20之前。如上述实施例所示，集成器件芯片24和相关的管芯附接材料或密封剂可以充当第一腔室14中的电解质40和第二腔室14中的气体之间的屏障或密封。
此外，如图4所示，第二集成器件芯片72可以安装到包基板62，并且可以相对于与传感元件34耦合的集成器件芯片24横向偏移。在图4中，第二模具72可以嵌入包体16的模制化合物中，这可以有利地实现标准的高温包装和模塑技术。器件管芯24和传感元件34可以包在单独的低温封装级中，以便减轻由于高温处理而对传感元件的损坏。集成器件芯片24可以线接合到基板62，并且第二集成器件芯片72可以通过嵌入在基板62中或上的导电迹线与集成器件芯片24电连通(例如，通过倒装芯片或引线键合互连，图4中未示出)。在各种实施例中，引线接合38可以由球形顶部或模制材料保护(参见，例如，图1)。在其他实施例中，引线接合38可以不受球形顶部或模制材料的保护。在一些实施例中，第二管芯72可以利用传感元件34处理由集成器件芯片24转换的信号。其他装置(例如，无源器件)可以类似地安装在包基板62上(例如，层压基板)并且通过包基板62(例如，层压基板)或直接与集成装置(传感器)模具24和/或第二集成器件芯片72通信。封装基板62在其下表面上包括引线37，以便于电连接到较大的电子系统，例如通过母板，例如印刷电路板或PCB。
图5是根据另一实施例的气体传感器包1的示意性侧剖视图。除非另有说明，否则图5的组件可以与图1-4中相同参考的组件相同或大致相似，并且可以以通常类似的方式操作或起作用。与图4的实施例不同，例如，气体入口50可以设置在包1的顶侧。过滤器52可以设置在模制化合物18中限定的孔上(例如，可以使用FAM技术形成)并且在气体入口50上方。如图所示，模具24可以通过管芯连接材料74安装到包基板62上。此外，可以提供支架结构75以使管芯24的底表面与包基板62的顶表面垂直偏移地间隔开。气体可以通过气体入口50和过滤器52进入包1的外部腔室70，并且可以横向穿过侧向通道76进入第二腔室14。因此，支架结构75、集成器件芯片24、包基板62可以限定图5的实施例中的第二腔室14，其与外部腔室70开放流体连通。支架结构75内的侧向通道76可以提供外部腔室70和第二腔室14之间的流体连通。在各种实施例中，侧向通道76可以通过横向穿过支架结构75(可以包括硅)来限定。与上述实施例一样，模具24、芯片帽60和密封帽44可以限定第一腔室12，电解质40设置在第一腔室12中。因此，在图5中，第二腔室14可以设置在模具24和包基板62之间。第一腔室12可以设置在模具24和气体入口50或过滤器52之间。在一些实施例中，侧向通道76可包括第二腔室14。
图6是根据另一实施例的气体传感器包1的示意性侧剖视图。除非另有说明，否则图6的组件可以与图1-5中相同参考的组件相同或大致相似，并且可以以大致类似的方式操作或起作用。与图5的实施例一样，气体入口50和过滤器52可以设置在包1的顶侧66。然而，与图5的实施例不同，外部腔室可以直接用作第二腔室14，第一腔室12可以设置在包1的底侧68附近。一个或多个模具支撑件75可以在包基板62上方支撑模具24，以在制造和/或使用期间改善模具24的结构支撑，并提供可以容纳芯片帽60和第一腔室12的厚度的空间。如图6所示，第一腔室12可以设置在管芯24和包基板62之间。如图6所示，可以提供一个或多个硅通孔(TSV)92以在模具24的前表面和后表面之间提供电连通。
图7是根据另一实施例的气体传感器包1的示意性侧剖视图。除非另有说明，否则图7的组件可以与图1-6中相同参考的组件相同或大致相似，并且可以以大致类似的方式操作或起作用。图7的包1可以类似于图5中所示的包1，例如，第二腔室14可以设置在模具24和包基板62之间，或者更靠近包1的底侧68。第一腔室12和电解质40可以设置在模具24和气体入口50之间，或者更靠近包1的顶侧66。然而，与图5的实施例不同，在图7中，集成器件芯片24可以安装在芯片架78上，该芯片架78至少部分地由包体16的模制化合物18限定。如图7所示，包体16可以包覆模制在一个或多个附加集成器件芯片和/或其他电子元件80(例如，无源元件)上以限定芯片架78。具有传感元件34的集成器件芯片24可以在一个或多个附加装置或模具80上方安装到芯片架78。集成装置(传感器)管芯24可以电连接到层压板包基板62，例如通过所示的接合线38，用于与嵌入式管芯和/或其他电子组件80通信。
与图5一样，在图7中，可以提供支架结构75以使模具24相对于芯片架78垂直偏移。侧向通道76可以在模制期间限定在支座结构75和/或模架78中，以实现外部腔室70和第二腔室14之间的流体连通。因此，气体可以通过气体入口50和过滤器52进入外部腔室70。气体可以通过支架结构75中的侧向通道76和/或芯片架78进入第二腔室14。有利地，图7的实施例可以实现较低的包覆足迹，因为集成器件芯片24可以堆叠在包覆成型的附加装置或模具80上。
图8是传感器芯片24的示意性侧剖视图，其中传感器部分82和处理器部分84被限定在共同的整体结构中。除非另有说明，图8的组件可以与图1-7的相同参考组件相同或大致相似。例如，如图8所示，传感元件34可以在气体通道54上施加(例如，印刷或以其他方式耦合)在管芯24的传感器部分82上。可以在第一腔室12中提供电解质40。图8的传感器芯片24可以与本文公开的任何包结合使用。传感器部分82和处理器部分84可以由相同的基板制成，例如，相同的晶片。例如，可以在处理器部分84中定义有源处理电路，并且可以在传感器部分82中定义附加的路由电路。可以在处理器部分84和传感器部分82之间定义横向腔室76或通道。侧向腔室76或通道可以提供气体入口以使气体进入垂直通道54以与传感元件34相互作用。在一些实施例中，侧向腔室76可以用作第二腔室14以在模具24的传感器部分的一侧提供流体连通。在其他实施例中，模具24外部的腔室可以用作第二腔室14。
在各种实施例中，横向腔室76或通道可以通过蚀刻来限定。例如，可以在处理器部分84上沉积牺牲材料，并且可以通过垂直通道54提供蚀刻剂以蚀刻横向腔室76或通道中的牺牲材料。侧向通道76可以通过湿法蚀刻、干法蚀刻或任何其他合适的方法来蚀刻。在各种实施例中，传感器管芯24可以包括预先形成的通道，并且传感器管芯24和专用集成电路(ASIC)可以例如通过管芯附接材料堆叠在一起。图8中所示的传感器芯片24的其他细节可以在美国专利公开No.US2018-0059044中找到，其全部内容通过引用整体并入本文并用于所有目的。
图9是根据另一实施例的气体传感器包1的示意性侧剖视图。除非另有说明，否则图9的组件可以与图1-8的相同参考组件相同或大致相似，并且可以以大致类似的方式操作或起作用。在图9的实施例中，气体传感器包1可包括包盖86，其至少部分地限定与气体入口50连通的第二腔室14。如图9所示，传感器芯片24可由包基板62(例如，层压基板)通过介入模具支撑87或坝支撑。模具支撑件87或挡板可包括L形或T形结构(例如，模制挡板)以限制传感器芯片24和包基板62之间的管芯附接材料的渗出，并为管芯24提供支撑。然而，应该理解，模具支撑件87或挡板可以包括其他合适的形状。
包1可以用作基于层压板的包系统。如上所述，电解质40可以设置在第一腔室12中，该第一腔室12至少部分地由芯片帽60限定。传感器芯片24可以在所示实施例中被倒置，例如，以减小气体入口50与传感器芯片24和传感元件34之间的距离。在所示的实施例中，包盖86可以设置在传感器芯片24和其他芯片、包和/或无源元件80上。包盖86可包括成形盖，例如，具有支撑水平上盖部分90的一个或多个垂直支腿88。一个或多个过滤器52可连接到盖86。在图9中，过滤器52设置在包盖86的水平上盖部分90上方。但是，在一些实施例中，过滤器52可以设置在包盖86的内部(例如，在盖部分90的下方)，或者包盖86的内部和外部(例如，在盖部分90的上方和下方)。气体入口50可包括形成在盖86中的端口孔，例如盖86的上部。
如上所述，包盖86可以至少部分地限定第二腔室14。在图9的实施例中，传感器管芯24和其他管芯、包或无源部件80，包括处理器管芯(例如，ASIC)也可以设置在至少部分地由盖86限定的第二腔室14中。如上所述，将传感器管芯24或其他管芯、包或无源元件80电连接到包基板62的键合线可以由聚合物或球形顶部保护。在其他实施例中，接合线可以暴露于第二腔室14。在各种实施例中，过滤器52可以作为片材施加到盖子86，并且可以在包体或壳体10上方突出。根据各种实施例，过滤器52可以在将盖86附接到包基板62之前或之后将盖子86施加到盖86。在其他实施例中，包盖86可包括一个或多个凹口，其尺寸和形状设计成接收和/或支撑过滤器52。过滤器52可压缩配合和/或胶合到盖86上以防止气体泄漏。在各种实施例中，滤光器52可包括疏水和/或防尘膜以降低将包1暴露于湿气的风险。此外，如图9所示，可以提供一个或多个硅通孔(TSV)92以提供管芯24的前表面和后表面之间的电连通。
图10是根据另一实施例的气体传感器包1的示意性侧视横截面图。除非另有说明，否则图10的组件可以与图9的相同参考组件相同或大致相似，并且可以以大致类似的方式操作或起作用。然而，与图9的实施例不同，在图10中，盖86可以设置在传感器管芯24上方，但是其他管芯、包和/或无源部件80可以安装到包基板62并且设置在盖86和第二腔室14的外部。
图11是根据另一实施例的气体传感器包1的示意性侧视横截面图。除非另有说明，否则图11的组件可以与图9-10的相同参考组件相同或大致相似，并且可以以大致类似的方式操作或起作用。与图9-10的实施例不同，如图11所示，一个或多个过滤器52可以设置在盖86的内表面上，而不是盖子的外表面(如图9-10所示)。此外，在图11的实施例中，滤光器52可以接触传感器芯片24的表面的至少一部分。在其他实施例中，盖86和滤光器52可以与传感器芯片24隔开，使得包1的第二腔室14也可以由盖86以类似于图9-10所示的方式限定。引线接合38可以在管芯24和包基板62之间形成电连接。在一些其他实施例中，管芯支撑87可以在传感器管芯24和基板62之间形成电连接。在图11的实施例中，气体可以通过气体入口50，通过气体通道54，并进入第一腔室12。由模具24产生的电流可以与气体的气体浓度成比例，其可以用于识别气体。
图12是根据另一实施例的气体传感器包1的示意性侧剖视图。图13是根据另一实施例的气体传感器包1的示意性侧剖视图。除非另有说明，否则图12-13的组件可以分别与图9-10的相同参考组件相同或大致相似。例如，在图12中，包盖86可以设置在传感器管芯24上方和其他管芯(例如专用集成电路或ASIC、管芯)、包和/或无源部件80上。在图13中，包盖86可以设置在传感器芯片24上方，并且其他模具(例如，ASIC芯片)、包和/或包部件80可以设置在盖子86和第二腔室14的外部。然而，与图9-10不同，在图12-13中，与图9-10相比，传感器芯片24可以是倒置的。如图12所示，例如，气体可以通过气体入口50进入第二腔室14。例如，气体可以通过模具支撑件87或坝中的开口(未示出)进入第二腔室14。
如图12和13所示，密封剂41或球形顶部可以设置在线接合38上。图13的实施例可以有利于捕获外部腔室70内的密封剂41，从而防止密封剂41到达其他管芯、包和/或无源部件80。
尽管已经在某些实施方案和实施例的背景下公开了本发明，但本领域技术人员将理解，本发明超出具体公开的实施方案，延伸到本发明的其他替代实施方案和/或用途以及其显而易见的修改和等同物。另外，虽然已经详细示出和描述了本发明的若干变型，但是基于本公开，本领域技术人员将容易明白在本发明范围内的其他变型。还预期可以进行实施例的特定特征和方面的各种组合或子组合，并且仍然落入本发明的范围内。应当理解，所公开的实施例的各种特征和方面可以彼此组合或替代，以便形成所公开发明的变化模式。因此，意图是本文公开的本发明的范围不应受上述具体公开的实施方案的限制，而应仅通过公平阅读所附权利要求来确定。

Claims (20)

1.气体传感器包，包括：
限定第一腔室和第二腔室的壳体；
所述第一腔室中的电解质；
用于在所述第二腔室和外部环境之间提供流体连通的气体入口，所述气体入口被配置为允许气体从所述外部环境进入所述第二腔室；和
安装到所述壳体的集成器件芯片，所述集成器件芯片包括传感器部分，该传感器部分具有配置为检测气体的传感元件，所述集成器件芯片的传感器部分具有至少部分地暴露于所述第一腔室的第一侧和至少部分地暴露于所述第二腔室的第二侧，所述第一侧与所述第二侧相对。
2.权利要求1所述的包，其中所述传感元件包括铂黑、钌黑、铱黑、碳和金中的至少一种。
3.权利要求1所述的包，其中所述传感元件至少部分地设置在所述第二腔室中，其中所述集成器件芯片包括处理器部分，所述处理器部分与所述传感器部分集成。
4.权利要求1所述的包，还包括在所述气体入口上设置的一个或多个过滤器。
5.权利要求1所述的包，还包括安装到所述集成器件芯片的芯片帽，所述芯片帽至少部分限定所述第一腔室。
6.权利要求1所述的包，其中所述电解质包括硫酸或固体电解质。
7.权利要求1所述的包，其中所述集成器件芯片部分嵌入模制化合物中，并且所述气体入口至少部分通过所述模制化合物的孔限定。
8.权利要求1所述的包，其中所述集成器件芯片至少部分将所述第一腔室与所述第二腔室密封，其中所述集成器件芯片包括从所述集成器件芯片的第一侧延伸到所述集成器件芯片的第二侧的多个通道。
9.权利要求1所述的包，还包括包基板，其中所述集成器件芯片安装在所述包基板上，所述包基板包括开口并且所述第二腔室包括开口。
10.权利要求9所述的包，还包括使所述集成器件芯片从所述包基板垂直偏移的支架结构，其中所述支架结构包括侧向通道，在所述第二腔室和由所述壳体限定的外部腔室之间提供流体连通，所述第二腔室设置在所述集成器件芯片和所述包基板之间。
11.权利要求9所述的包，还包括使所述集成器件芯片从所述包基板垂直偏移的支架结构，其中所述第一腔室设置在所述集成器件芯片和所述包基板之间。
12.权利要求9所述的包，还包括包基板和附加集成器件芯片，安装到所述包基板并用模制化合物包覆成型的附加集成器件芯片，其中所述集成器件芯片安装在所述包基板上。
13.权利要求12所述的包，其中所述集成器件芯片在所述附加集成器件芯片上安装到由所述模制化合物限定的芯片架，并且所述第二腔室设置在所述集成器件芯片和所述芯片架之间。
14.权利要求1所述的包，其中所述包包括包基板和安装到所述包基板的包盖，并且所述第二腔室至少部分由所述包基板和所述包盖限定。
15.权利要求1所述的包，其中所述包包括包基板和安装到所述包基板的包盖，并且所述第二腔室至少部分由所述包基板和所述集成器件芯片限定。
16.气体传感器包，包括：
限定第一腔室的壳体；
所述第一腔室中的电解质；
气体入口，被配置为允许气体从外部环境进入所述气体传感器包；和
安装到所述壳体的集成器件芯片，所述集成器件芯片包括一个或多个气体通道和传感器部分，所述传感器部分设置在所述一个或多个气体通道附近并与所述气体通道流体连通，并且具有配置为检测气体的传感元件，所述集成器件芯片的传感器部分具有至少部分暴露于所述第一腔室的第一侧和与所述第一侧相对的第二侧；和
其中所述气体传感器包被配置为使得所述气体通过所述一个或多个气体通道以撞击在所述传感元件上。
17.权利要求16所述的气体传感器包，其中所述壳体还限定第二腔室，并且所述传感器部分发第二侧至少部分暴露于所述第二腔室。
18.权利要求16所述的包，还在气体通路中的气体入口和传感器部分之间包括一个或多个过滤器。
19.气体传感器包，包括：
用于限定第一腔室的壳体构件，所述体构件具有气体入口；
所述第一腔室中的电解质；和
安装到所述壳体的集成器件芯片构件，所述集成器件芯片包括传感器部分，该传感器部分具有配置为检测气体的传感元件，所述传感元件具有至少部分暴露于所述第一腔室的第一侧和与所述第一侧相对的第二侧。
20.权利要求19所述的包，其中所述壳体构件还限定第二腔室。
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