CN104704628A - 半导体传感器器件和制造半导体传感器器件的方法 - Google Patents

半导体传感器器件和制造半导体传感器器件的方法 Download PDF

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Publication number
CN104704628A
CN104704628A CN201380051564.1A CN201380051564A CN104704628A CN 104704628 A CN104704628 A CN 104704628A CN 201380051564 A CN201380051564 A CN 201380051564A CN 104704628 A CN104704628 A CN 104704628A
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substrate
wiring layer
diaphragm
layer
molding compound
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CN104704628B (zh
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弗兰兹·施兰克
马丁·施雷姆斯
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Ams Osram AG
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Austriamicrosystems AG
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18161—Exposing the passive side of the semiconductor or solid-state body of a flip chip

Abstract

一种半导体器件包括：半导体材料的衬底(1)，其具有前侧(4)和相对的后侧(7)；位于所述前侧(4)的布线层(5)；位于所述后侧(7)的另外布线层(8)；以及连接所述布线层(5)和所述另外布线层(8)的衬底通孔(3)。热板(24)布置在所述衬底上或所述衬底中，传感器层(21)布置在所述热板附近。在所述衬底(1)之上将模制复合物(14)布置在后侧(7)上，在所述模制复合物(14)中形成空腔(17)以容纳所述传感器层(21)，并且用膜片(15)覆盖所述空腔(17)。将所述模制复合物(14)敷涂到晶片上，以及可以使用膜辅助模制工艺。

Description

半导体传感器器件和制造半导体传感器器件的方法
背景技术
US 7,495,300 B2公开了一种硅基气体感测半导体器件，其包括由嵌入薄氧化硅层中的钨制成的电阻加热器，其中所述薄氧化硅层形成于硅衬底的凹槽之上。可以使用CMOS工艺将所述设备与电路系统单片地集成。
US 7,659,612 B2公开了一种包括通线互连的半导体组件，其由聚合物层部分地密封，并且包括与衬底接点电连接的焊盘和重分布导体。一种制作所述组件的方法可以包括用于以晶片级形成所述聚合物层的膜辅助模制工艺。在所述膜辅助模制工艺之后，对所述组件进行单片化。可以使用所述半导体组件来制作层叠系统。
TW I290358 B公开了一种用于微型气体传感器的封装，其中所述微型气体传感器安装在载体的容器中并且被提供有电连接。所述容器由过滤器组件封闭，所述过滤器组件固定到传感器之上的载体并且包括结构网和薄膜。
KR 101034647 B1描述了一种用于气体传感器的晶片级封装。包括含有传感器和支承单元的空腔的衬底利用另外衬底来覆盖，所述另外衬底被提供有空腔和红外滤波器。所述衬底通过金属焊料层来接合。
US 2012/0056312 A1描述了一种层叠半导体晶片的制造方法，所述层叠半导体晶片包括硅通孔和安装在通孔之间的空腔中的多个裸片。在所述裸片上沉积密封剂。在所述密封剂之上形成互连结构，并且使互连结构电连接至所述通孔。当晶片被提供有所述密封剂和所述互连结构时，可以将它们安装在彼此的顶部上。
US 2007/0045515 A1公开了一种微电子成像设备，其具有位于衬底的相对侧上的集成电路和图像传感器，所述衬底被提供有衬底通孔。从覆盖材料形成的支撑体支承包括玻璃在内的透光元件，所述透光元件通过包括粘接层在内的附着元件附着到所述支撑体并且保护微透镜阵列和其它特征件不被污染。所述覆盖材料可以包括光刻胶或另外可选择性去除的物质。
US 2009/0256216 A1公开了一种传感器的晶片级芯片尺寸封装，其中所述传感器具有包括IC、硅通孔和覆盖在顶面上的保护密封剂层的衬底。在容纳所述传感器的空腔的上方布置一个顶盖，所述顶盖不是与所述密封剂层齐平就是被所述密封剂层部分地覆盖。
US 2006/0154401 A1公开了一种气体感测半导体器件，其包括气敏层和布置所述气敏层附近的加热器。
GB 2303710 A公开了一种气体传感器，其具有由聚四氟乙烯形成的气体可渗透膜。
JP 2001-337063 A公开了一种插入外壳的凹陷部分中的气体传感器，其中气体感测部分的凸块朝向下。在传感器主体朝着引线下降时，通过加热所述凸块使引线连接。
EP 1775259 A1公开了一种用于可以包括两个不同的传感器、尤其是压力传感器和加速度计的设备的晶片级封装。
US 2010/0230766 A1公开了一种传感器器件，其包括密封模制材料，并且将聚四氟乙烯用作涂覆材料。
发明内容
本发明的一个目的是公开一种适于晶片级封装的半导体传感器器件。本发明的另外目的是公开一种以晶片级封装制造半导体传感器器件的方法。
利用如权利要求1所述的半导体传感器器件和利用如权利要求7所述的以晶片级封装制造半导体传感器器件的方法来实现此目的。实施例和变体由从属权利要求得到。
以晶片级封装制造的半导体器件包括：半导体材料的衬底，其具有前侧和相对的后侧；位于所述前侧的布线层；位于所述后侧的另外布线层；以及连接所述布线层与所述另外布线层的衬底通孔。在所述后侧将热板布置在所述衬底中或所述衬底上。将传感器层布置在所述热板附近，并且使其与所述另外布线层电连接。将模制复合物(moldcompound)布置在所述后侧上，并且用膜片覆盖。所述模制复合物和所述膜片形成了容纳所述传感器层的空腔。
在一个实施例中，所述热板为所述另外布线层的一部分。
在另外实施例中，将所述传感器层布置在所述衬底之上，并且将所述热板布置在所述衬底与所述传感器层之间。
在另外实施例中，将所述热板布置在所述衬底的凹槽之上。
在另外实施例中，所述膜片对液体是不可渗透的，而对气体是可渗透的。
在另外实施例中，所述膜片为聚四氟乙烯或膨体聚四氟乙烯。
以晶片级封装制造半导体器件的方法包括以下步骤：在具有前侧和相对的后侧的、半导体材料的衬底上形成多个半导体器件；在所述前侧布置布线层；在所述后侧布置另外布线层；形成连接所述布线层与所述另外布线层的衬底通孔；在所述后侧将多个热板和传感器层布置在所述衬底中或所述衬底之上；在所述衬底之上将模制复合物布置并构造在后侧上以形成用于容纳所述传感器层的多个空腔，并且用膜片覆盖所述空腔。
在所述方法的一个变体中，所述膜片对液体是不可渗透的，而对气体是可渗透的。
在所述方法的另外变体中，所述膜片由聚四氟乙烯或膨体聚四氟乙烯形成。
在所述方法的另外变体中，用保护膜临时覆盖所述膜片。这有利于实现回流焊工艺，而不会损害所述传感器层。
在所述方法的另外变体中，将所述膜片胶合到所述模制复合物。
在所述方法的另外变体中，将所述膜片超声焊接到所述模制复合物。
在所述方法的另外变体中，使用膜辅助模制工艺以结构化的方式敷涂所述模制复合物。
具体实施方式
下文结合附图详细地描述半导体传感器器件及其制造方法的实例，所述附图是半导体传感器器件的一个实施例的横截面。
衬底1被提供有：电介质2；衬底通孔3；布线层5，其在前侧4嵌入电介质2中并且被提供有柱形凸块6；以及另外布线层8，其在与前侧4相对的后侧7嵌入电介质2中。电介质2可以包括半导体材料的氧化物，例如，尤其为二氧化硅，和/或半导体材料的氮化物，尤其为Si3N4。电介质2可以为由任何合适的钝化电介质材料形成的钝化部。
衬底通孔3通过敷涂金属来形成，其敷涂到衬底1中的通路孔的侧壁。衬底通孔3的中心部分可以不被敷涂金属并保持空心，或者可以用或许导电或绝缘的另外材料来填充衬底通孔3的中心部分。附图示出了用电介质2填充衬底通孔3，但是在其它实施例中，衬底通孔3的内体积可以为空心，并且，例如，可以由薄保护和/或绝缘层来覆盖它们的侧壁敷涂金属。
导体层，其被命名为布线层5和另外布线层8，可以是布置在不同的敷涂金属水平面上的任何结构化的金属层或多个金属层。如果存在两个或两个以上的敷涂金属水平面，则电介质2可以被提供为金属间电介质。导体层可以包括集成电路的布线，其例如尤其可以包括布置在前侧4或后侧7的CMOS器件，和/或重分布层。
以举例的方式示出了柱形凸块6，并且柱形凸块6可以用适于外部电端子的任何触连接来替换。如果柱形凸块6由焊球形成，则它们优选被提供有凸块下敷涂金属，根据标准半导体技术，凸块下敷涂金属被敷涂成额外的薄层，因此图中未示出。位于衬底1相对侧上的导体通过衬底通孔3互连。
尤其可以是气体传感器的集成传感器包括传感器层21，传感器层21布置在衬底1中或衬底1上，而不安装单独的传感器芯片。为了改善热隔离，可以在传感器层21之下的衬底1中形成凹槽22。可以通过穿过电介质2的垂直互连或插塞23来提供传感器层21与另外布线层8和/或衬底通孔3之间的电连接。如果另外布线层8被布置成毗邻于传感器层21，尤其是重叠，如图所示，并且在垂直方向上这些层之间无间隙，则另外布线层8与传感器层21之间的直接电接触可以在没有垂直互连或插塞的情况下形成。热板24在传感器层21的附近集成在衬底1中或衬底1上。优选地，热板24为电阻加热器，其由电流加热，并且可以被形成为具有适当电阻的导体轨道。空腔17形成于模制合成物14内传感器层21的上方，并且由膜片15封闭。优选地，膜片15对液体是不可渗透的。在气体传感器的情况下，膜片15至少对待检测的气体是可渗透。特别地，膜片15例如可以是聚四氟乙烯(PTFE)或膨体聚四氟乙烯(ePTFE)。
在制造方法中，将模制复合物14敷涂在衬底1的后侧7之上。将模制复合物14构造成隔室，隔室被由模制复合物14形成的柱或壁包围。因而，将多个传感器层布置在模制复合物14的隔室中。可以通过本身已知的膜辅助模制工艺来促进模制复合物14的应用和结构化。利用保护膜临时覆盖所述膜片可能是有利的，尤其在执行易于损害传感器层的另外工艺步骤或执行在其它方面对各组件产生不利影响的另外工艺步骤的情况下是有利的，例如，回流焊工艺。保护膜后来被去除，而膜片15被提供为永久覆盖部或保护部，尤其用于封闭住空腔以防止进水。通过晶片切割工艺将衬底1分成各个半导体器件。柱形凸块6于是可以用作用于传感器外部电连接的端子。
当已经通过模制复合物和膜片形成了晶片级封装时，通过晶片切割，割穿衬底和由模制复合物形成的壁，来分离各个半导体器件。
参考数字列表
1  衬底
2  电介质
3  衬底通孔
4  前侧
5  布线层
6  柱形凸块
7  后侧
8  另外布线层
14  模制复合物
15  膜片
21  传感器层
22  凹槽
23  插塞
24  热板

Claims (13)

1.一种半导体传感器器件，包括：
半导体材料的衬底(1)，其具有前侧(4)和相对的后侧(7)；
位于所述前侧(4)的布线层(5)；
位于所述后侧(7)的另外布线层(8)；
连接所述布线层(5)和所述另外布线层(8)的衬底通孔(3)；
传感器层(21)，其布置在所述后侧(7)并且与所述另外布线层(8)电连接；以及
布置在所述后侧(7)上的模制复合物(14)，所述模制复合物(14)用膜片层(15)覆盖，所述模制复合物(14)和所述膜片(15)形成了容纳所述传感器层(21)的空腔(17)；
其特征在于：
在所述传感器层(21)附近将热板(24)布置在所述衬底(1)上或所述衬底(1)中。
2.如权利要求1所述的半导体器件，其中，
所述热板(24)是所述另外布线层(8)的一部分。
3.如权利要求1或2所述的半导体器件，其中，
所述传感器层(21)布置在所述衬底(1)之上，并且所述热板(24)布置在所述衬底(1)和所述传感器层(21)之间。
4.如权利要求1至3中的一项所述的半导体器件，其中，
热板(24)布置在所述衬底(1)的凹槽(22)之上。
5.如权利要求1至4中的一项所述的半导体器件，其中，
所述膜片(15)对液体是不可渗透的，而对气体是可渗透的。
6.如权利要求1至4中的一项所述的半导体器件，其中，所述膜片(15)为聚四氟乙烯或膨体聚四氟乙烯。
7.一种以晶片级封装制造如权利要求1至6中的一项所述的半导体器件的方法，包括：
在具有前侧(4)和相对的后侧(7)的半导体材料的衬底(1)上形成多个半导体器件；
在所述前侧(4)布置布线层(5)；
在所述后侧(7)布置另外布线层(8)；
形成连接所述布线层(5)和所述另外布线层(8)的衬底通孔(3)；
在所述后侧(7)布置多个热板(24)和传感器层(21)；
在所述衬底(1)之上将模制复合物(14)布置在所述后侧(7)上，其中所述模制复合物(14)被构造成形成用于容纳所述传感器层(21)的多个空腔(17)；以及
用膜片(15)覆盖所述空腔(17)。
8.如权利要求7所述的方法，其中，
所述膜片(15)对液体是不可渗透的，而对气体是可渗透的。
9.如权利要求7所述的方法，其中，
所述膜片(15)为聚四氟乙烯或膨体聚四氟乙烯。
10.如权利要求7至9中的一项所述的方法，其中，
用保护膜临时覆盖所述膜片(15)，这使得能够实现回流焊工艺而不会损害所述传感器层。
11.如权利要求7至10中的一项所述的方法，其中，
将所述膜片(15)胶合到所述模制复合物(14)。
12.如权利要求7至10中的一项所述的方法，其中，
将所述膜片(15)超声焊接到所述模制复合物(14)。
13.如权利要求7至12中的一项所述的方法，其中，
通过使用膜辅助模制工艺以结构化的方式敷涂所述模制复合物(14)。
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