TWI290358B - Package structure of micro gas sensor and making method thereof - Google Patents

Package structure of micro gas sensor and making method thereof Download PDF

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Publication number
TWI290358B
TWI290358B TW094146641A TW94146641A TWI290358B TW I290358 B TWI290358 B TW I290358B TW 094146641 A TW094146641 A TW 094146641A TW 94146641 A TW94146641 A TW 94146641A TW I290358 B TWI290358 B TW I290358B
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Taiwan
Prior art keywords
gas sensor
micro
micro gas
structural
carrier
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TW094146641A
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Chinese (zh)
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TW200725822A (en
Inventor
Wen-Wang Ke
Nai-Hao Kuo
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Ind Tech Res Inst
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

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  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

The invention provides a package structure of micro gas sensor and the making method. It is fixed at least a micro sensing chip on the containing space of a load bearing component. The micro sensing chip electrically connects with the load bearing component. A filter component is fixed at the top surface of the containing space of the load bearing component. The filter component comprises at least structure net and thin film located at the outside surface of the said structure net. The filter component can isolate the light, moisture, pollution substance in the environment. It can overcome the drawback of receiving pollution easily in prior art.

Description

1290358。 九 '發明說明: 【發明所屬之技術領域】 :、本發明係關於一種感測器之封裝技術,尤指一種用以 :感測氣體之微氣體感測器之封裝結構及製造方法。 【先前技術】 針對微氣體感測器研發中,封裝是關鍵的技術之一。 封裝的目的在於提供微型氣體感測器穩定的操作環境,如 _防潮的設計、減低空氣中的溼度效應、減少直接接觸環境 中的化學物質、光電特性的屏蔽、震動及衝擊等都是重要 的考量因素。而封裝測試技術是發展微機電後段製造瓶頸 技術之一,主要原因是封測佔微機電製造成本7〇%(ref. DigiTimes)。目前微機電產品封裝方面並未標準化,加上 不同微機電產品需要不同的封裝考量,讓封裝技術更加複 雜化,微氣體感測器於設計製造後都必須加以封裝,而封 裝費用仍佔整個微氣體感測器成本中很高的比例。 • 清參閱第1圖,係為美國專利公告第4, 596, 975號之 封裝結構,主要係於一封裝底座(base) u上以黏著劑 (adhsive) 12固定一直立的中空玻璃管(glass比“) 13,於該中空玻璃管13頂端固定一晶片(die) 14,且該 封裝底座11穿置有複數個導腳(pin) 15,該導腳15頂 端以導線(wire) 16連接該晶片14,並以一金屬罩17 蓋在封裝底座11上,以將上述結構封裝在金屬罩17裡 面,俾達到封裝之目的。 藉由該巾空玻璃管13接置於封裝底座uji,以作為 5 18976 1290358 二曰片U之支撐結構,其目的係用以增加 絕緣特性以達到低輸入功率之需 二 ..^成兀件封裝後之尺寸不易薄型化,因 t :薄型輕量㈣費性之產品。 U於了攜式 ,參M 2W ’係為美國專利公告第6,㈣, 戶仏出之封裝結構,係於—封裝模組(mQlded packaj 21、ff黏著劑22固定一晶片23,而該封裝模組21呈有 =架(leadframe)21a,使該晶片 23 藉、 電性連接至該導線架21a,另有—嵌裝有玻璃片251 框25裝置在該封裝模組21頂面,且使該玻璃片25ι位於 忒晶片23之上方,俾達到封裝之目的。 、 而該窗框25與玻璃片251係藉由ep〇xy加熱供烤而 達成固定’並使用相同之epoxy將窗框25與封裝模組21 黏合’其目的是保護用以感測之晶片23避免受到水氣、 塵埃等干擾。但封裝所使用之異質材料經加熱洪烤黏合後 >易產生裂縫現象’導致密合度不佳,故而該晶片Μ仍然 易受水氣、塵埃等因素影響其感測的結果。 此外,習知感測式的封裝結構均只適用於單一封裝應 用,相對僅有單一感測功能,並無法同時偵測多種狀態或 物質’故不具功能整合特性。 因此,如何提供一種微氣體感測器之封裝結構及其製 法,俾得以感測多種不同的氣體、得縮小封裝體積及具有 薄型化與輕量化等優點、得提高感測效率與準確度及延長 使用壽命、以及避免干擾感測結果,實為目前亟待解決之 18976 6 1290358 課題。 【發明内容】 目的係在提供 以感測多種不 鑑於前述習知技術之缺失,本發明之一 一種微氣體感測器之封裝結構及其製法,得 同的氣體。 種微氣體感測器之封 及具有厚度薄與重量 本發明之另一目的,係在提供一 裝結構及其製法,得縮小封裝體積, 輕等優點。 本叙明之又一目的,係在提供一種微氣體感測器之封 衣結構及其製法,得依其感測特性設置不同之過滤件,以 避免干擾感測結果。 ”為達上述及其他目的,本發明係提供一種微氣體感測 益之封裝製法,係包括:提供具有至少—容置空間之承載 件,於該容置空間内固定至少—微感測晶片,並使該微感 測晶片與該承載件電性連接;以及於該承載件固定一用以 封閉該容置空間之過濾件。 前述該過濾、件之製法係可包括:提供一第一結構網; =第:結構網表面形成粉末狀填充物;於該填充物表面壓 口一第二結構網;以及於第二結構網外表面壓合一薄膜。 於一較佳實施例中,該過濾件之製法係可包括:提供一結 構網;以及於結構網外表面壓合一薄膜。 18976 7 1290358 依上述之製造方法,本發明復提供一種微氣體感測器 之封裝結構,係包括:承載件,係具有至少一容置空間. 至少一微感測晶片,係固定於該容置空間内,並與該承载 件電性連接;以及過濾件,係固定於該承載件以封閉該容 置空間。 ^该過濾件係可包括第一結構網、第二結構網、形成於 第一結構網與第二結構網之間的粉末狀填充物、及位於第 二結構網外表面之薄膜。於一較佳實施例中,或該過濾件 係可包括一結構網以及形成於結構網外表面之薄膜。 、由於本發明所提供之微氣體感測n之封裝結構及其 製法中’该承載件係具有一個或複數個容置空間,於各註 容置空間内接置至少一微感測晶片,因此可將多個不同= ^或等級之微感測晶片封裝於單—封裝結構中,可用以同 不㈣氣體或等級’因而具有較大的使用彈性及感 *此外’於該承載件之容置空間上方裝設有過 依感測特性設置不同έ士 M ,. 心千侍 ^ t 構之弟一結構網、第二結構網盥粉 末狀填充物,以隔纟g # /、 提高該微感測晶片_沾、、隹^ 尤[乱俾可 乃偵測的準確性,並可保護 以延長使用壽命。 旯列日日片 【實施方式】 以下係藉由特定+ v, ^ ^ ^ /、肢貫施例說明本發明之實施方 式,热悉此技蟄之人丰7丄丄 只W乃 暸解本發明之其他優 之内合幸工易地 ”、、人功效。本發明亦可藉由其他不同 18976 8 1290358-的具體實例加以施行或應用,本說明書中的各項細節亦可 基於不同觀點與應用,在不悖離本發明之精神下進行各種 修飾與變更。又本發明之圖式僅為簡單說明,並非依實際 尺寸描繪,亦即未反應出相關構成之實際尺寸,先予敘明。 [第一實施例] 以下第3A圖至第3C圖詳細説明本發明之微氣體感測 器之封裝製法。 請參閱第3A圖,首先,提供一例如為電路基板31 之承載件,而该電路基板31具有至少一容置空間31〇。 凊簽閱第3B圖,將至少一微感測晶片32以表面黏著 (SMD)或覆晶(Flip Chip)方式電性連接至電路基板31的 容置空間310中,俾以將該微感測晶片32固定於電路基 板31之容置空間31〇内。 請參閱第3C圖,於該電路基板31之容置空間31〇 頂面固定一過濾件33。 狀依前述之製法,本發明復提供一種微氣體感測器之封 衣結構,係包括一係如電路基板31之承載件,該電路基 板31具有至少一容置空間31〇 ;至少一微感測晶片32, 2固定於電路基板31之容置空間31〇内,並使該微感測 曰曰片32以覆晶方式電性連接該電路基板31 •,以及固定於 該電路基板31之容置空間頂面之過濾件33。 清夢閱第3D圖,於該電路基板31之至少一容置空間 310中接置有至少一微感測晶片32,使該電路基板31中 具有複數個微感測晶片32,得藉由複數個微感測晶片32 9 18976 1290358“ 作不同等級或類型的感測,因而可有較大的使用彈性及感 測範圍。 : 且該微感測晶片32係埋設在電路基板31中,故可縮 :小體積及達到薄型化之目的。 請參閱第4A圖至4D圖,係為本發明之過濾件之製法 不意圖。 請參閱第4A圖,首先提供一第一結構網33a,而該 第一結構網係為金屬、塑膠或陶瓷所製成,且該第一結構 網33a具有網孔,而該網孔係以機械加工或化學反應蝕刻 所形成。 請參閱第4B圖,於該第一結構網33a表面形成粉末 狀填充物33b,而该粉末狀填充物33b係為活性碳、多孔 性陶瓷、金屬氧化物所成組成群組之一者。 請參閱第4C圖,於該粉末狀填充物33b表面壓合一 第二結構網33c,而該第二結構網33c係為金屬、塑膠或 鲁~兗所‘成’且δ亥弟一結構網3 3 c具有網孔,而該網孔係 以機械加工或化學反應钱刻所形成。又該第一及第二結構 網33a、33c之網孔尺寸以不會讓粉末狀填充物33b外漏 為主。 請芩閱第4D圖,於第二結構網33c外表面以黏貼、 網印或氣相沉積等方式形成一薄膜33d,而該薄膜33(1係 為高分子材料並具有防水透氣之PTFE(聚四氟乙烯,或稱 鐵弗龍)微孔薄膜。 由上述過濾件33之製法,復提供一過濾件33結構, 10 18976 !29〇358 係包括第~一結構網33a、第二結構網33c、形成於第一結 構、、、罔與第二結構網之間的粉末狀填充物33b及位於第二 結構網外表面之薄膜33d。 由於該電路基板31之容置空間310上方裝置有過濾 ,33/而得依感測特性的不同選用不同結構之第一結構 _第、、、°構網與粉末狀填充物,以隔絕非感測對象之氣 ' 、’或欠氣俾可長1向该微感測晶片债測的準確性,並1290358. Nine' invention description: [Technical field of the invention]: The invention relates to a packaging technology of a sensor, in particular to a package structure and a manufacturing method for sensing a gas micro gas sensor. [Prior Art] Packaging is one of the key technologies for the development of micro gas sensors. The purpose of the package is to provide a stable operating environment for the micro gas sensor, such as _ moisture-proof design, reducing the humidity effect in the air, reducing the chemical in direct contact with the environment, shielding of photoelectric characteristics, vibration and shock are all important. Considerations. Packaging testing technology is one of the bottleneck technologies for the development of micro-electromechanical back-end manufacturing. The main reason is that packaging and testing accounts for 7% of MEMS manufacturing costs (ref. DigiTimes). At present, the packaging of MEMS products is not standardized. In addition, different MEMS products require different packaging considerations, which makes the packaging technology more complicated. The micro gas sensors must be packaged after design and manufacture, and the packaging cost still accounts for the whole micro. A high percentage of gas sensor costs. • Refer to Figure 1 for the package structure of US Patent Publication No. 4, 596, 975, mainly on a package base (base) u with an adhesive (adhsive) 12 fixed upright hollow glass tube (glass) A die 14 is fixed on the top end of the hollow glass tube 13 and the package base 11 is provided with a plurality of pins 15 which are connected by a wire 16 at the top end of the package. The wafer 14 is covered by a metal cover 17 on the package base 11 to encapsulate the structure in the metal cover 17 for packaging purposes. The glass tube 13 is attached to the package base uji as a 5 18976 1290358 The support structure of the two-piece U, the purpose of which is to increase the insulation characteristics to achieve the low input power. The size of the package is not easy to be thinned, because t: thin and lightweight (four) cost The product is U. The U2W is the US Patent Publication No. 6, (4). The package structure of the household is based on the package module (mQlded packaj 21, ff adhesive 22 is fixed to a wafer 23, The package module 21 has a lead frame 21a, so that the chip 23 is electrically connected to the lead frame 21a, and is additionally embedded with a glass piece 251. The frame 25 is disposed on the top surface of the package module 21, and the glass piece 25ι is located above the silicon wafer 23, and then the package is And the sash 25 and the glass piece 251 are fixed by the ep〇xy heating for baking, and the sash 25 is bonded to the package module 21 by the same epoxy. The purpose is to protect the sensing. The wafer 23 is protected from moisture, dust, etc., but the heterogeneous material used in the package is heated and baked, and the crack is easily generated, resulting in poor adhesion. Therefore, the wafer is still susceptible to moisture, dust and the like. In addition, the conventional sensing package structure is only suitable for a single package application, and has only a single sensing function, and cannot detect multiple states or substances at the same time, so it has no functional integration characteristics. How to provide a micro gas detector package structure and its manufacturing method, which can sense a variety of different gases, reduce the package volume, and have the advantages of thinning and light weight, so as to improve the sensing efficiency and accuracy. The accuracy and longevity of the service life, as well as the avoidance of interference with the sensing result, are currently the subject of 18976 6 1290358, which is currently to be solved. [Invention] The object of the present invention is to provide a sensing of various kinds of defects that are not in view of the aforementioned prior art. The package structure of the micro gas sensor and the preparation method thereof, the same gas. The sealing of the micro gas sensor and the thinness and weight of the invention are another object of the invention, and provide a structure and a preparation method thereof. The purpose of reducing the package volume, lightness, etc. Another object of the present invention is to provide a micro gas sensor sealing structure and a manufacturing method thereof, and different filter elements are set according to the sensing characteristics thereof to avoid interference with the sensing result. . In order to achieve the above and other objects, the present invention provides a micro gas sensing package manufacturing method, comprising: providing a carrier having at least an accommodating space, and fixing at least a micro sensing wafer in the accommodating space; And the micro-sensing wafer is electrically connected to the carrier; and the filter member is fixed to the filter member for closing the accommodating space. The method for manufacturing the filter and the device may include: providing a first structural net = =: the surface of the structural web forms a powdery filling; a second structural web is pressed against the surface of the filling; and a film is pressed against the outer surface of the second structural web. In a preferred embodiment, the filter The manufacturing method may include: providing a structural net; and pressing a film on the outer surface of the structural net. 18976 7 1290358 According to the manufacturing method described above, the present invention provides a package structure of a micro gas sensor, comprising: a carrier The at least one micro-sensing wafer is fixed in the accommodating space and electrically connected to the carrier; and the filter member is fixed to the carrier to close the The filter element may include a first structural net, a second structural net, a powdered filler formed between the first structural net and the second structural net, and a film on the outer surface of the second structural net. In a preferred embodiment, the filter member may include a structural net and a film formed on the outer surface of the structural net. The micro-gas sensing n package structure provided by the present invention and the method of manufacturing the same The device has one or a plurality of accommodating spaces, and at least one micro-sensing chip is connected in each of the accommodating spaces, so that a plurality of micro-sensing chips of different sizes or levels can be packaged in the single-package structure. It can be used with the same (4) gas or grade 'and thus has greater flexibility and feel. * In addition, the sensory characteristics are set above the accommodating space of the carrier to set different gentlemen M. The structure of the structure of the brother, the second structure of the network of powdery filler, with the barrier g # /, improve the accuracy of the micro-sensing wafer _ 、, 隹 ^ 尤 俾Protection to extend the service life. The following is a description of the embodiments of the present invention by means of a specific + v, ^ ^ ^ /, and the embodiments of the present invention are well known. Work easily, and people's effectiveness. The present invention may be carried out or applied by other specific examples of 18976 8 1290358-, and various modifications and changes can be made without departing from the spirit and scope of the invention. Further, the drawings of the present invention are only for the sake of brevity and are not depicted in actual dimensions, that is, the actual dimensions of the related structures are not reflected, which will be described first. [First Embodiment] The packaging method of the micro gas sensor of the present invention will be described in detail below with reference to Figs. 3A to 3C. Referring to FIG. 3A, first, a carrier such as a circuit substrate 31 is provided, and the circuit substrate 31 has at least one receiving space 31A. Referring to FIG. 3B, the at least one micro-sensing wafer 32 is electrically connected to the accommodating space 310 of the circuit substrate 31 by surface adhesion (SMD) or flip chip (Flip Chip), and the micro sensing is performed. The wafer 32 is fixed in the accommodating space 31A of the circuit substrate 31. Referring to FIG. 3C, a filter member 33 is fixed to the top surface of the circuit substrate 31. According to the foregoing method, the present invention provides a sealing structure of a micro gas sensor, comprising a carrier such as a circuit substrate 31, the circuit substrate 31 having at least one receiving space 31 〇; at least one micro sensation The test wafers 32, 2 are fixed in the accommodating space 31A of the circuit board 31, and the micro-sensing cymbals 32 are electrically connected to the circuit board 31 in a flip-chip manner, and are fixed to the circuit board 31. A filter member 33 is placed on the top surface of the space. In the third embodiment of the present invention, at least one micro-sensing wafer 32 is disposed in at least one accommodating space 310 of the circuit substrate 31, so that the plurality of micro-sensing wafers 32 are included in the circuit substrate 31. The micro-sensing wafers 32 9 18976 1290358 "have different levels or types of sensing, and thus have greater flexibility and sensing range. The micro-sensing wafer 32 is embedded in the circuit substrate 31, so Shrinking: small volume and thinning. Please refer to Figures 4A to 4D, which are not intended to be a method of manufacturing the filter of the present invention. Referring to Figure 4A, a first structural net 33a is first provided, and the first A structural network is made of metal, plastic or ceramic, and the first structural net 33a has a mesh, and the mesh is formed by mechanical processing or chemical reaction etching. Please refer to FIG. 4B for the first The powdery filler 33b is formed on the surface of the structural net 33a, and the powdery filler 33b is one of a group consisting of activated carbon, porous ceramics, and metal oxide. Please refer to FIG. 4C for the powder filling. The surface of the object 33b is pressed against a second structural net 33c, The second structural net 33c is made of metal, plastic or ruthenium and the δ 亥 一 结构 3 3 3 3 具有 具有 具有 具有 δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ δ The mesh size of the first and second structural nets 33a, 33c is such that the powdery filler 33b is not leaked. Please refer to FIG. 4D for pasting or screen printing on the outer surface of the second structural net 33c. A film 33d is formed by vapor deposition or the like, and the film 33 (1 is a polymer material and has a waterproof and breathable PTFE (polytetrafluoroethylene, or Teflon) microporous film. The method of preparing the filter 33 described above Providing a filter member 33 structure, 10 18976 !29〇 358 includes a first structural net 33a, a second structural net 33c, a powdered filling formed between the first structure, the crucible and the second structural net The material 33b and the film 33d on the outer surface of the second structure net. Since the device above the accommodating space 310 of the circuit substrate 31 has filtering, 33/, the first structure of different structures is selected according to different sensing characteristics _, , ° mesh and powder filler to isolate the non-sensing object', 'or The deficiencies can be as long as 1 to the accuracy of the micro-sensing chip debt measurement, and

可保屢忒彳政感測晶片以延長使用壽命。 每 > 另明參閱第5A至5B圖,係為本發明之過濾件的另一 例’與别貫施例之不同處在於本實施例不使用粉末 、充物,僅有一可透光之結構網33&,及薄膜,,而 "作為用以感測光之過濾裝置。 絪Μ月,』第5A S,首先提供一結構、網33a,,而該結構 機械加工或化學反應蝕刻以形成網孔。 請參閱帛5B目,接著於該 缚膜33d,,以成糸一可、秦上 丨π ® /土口 成為一了透先之過濾件33,;而可提供透光 二效果,並可用以保護位在其下方的微感測晶片。 L弟一實施例] 封壯/第6A ^ 6D 81 ’係為本發明之微氣體感測器之 承;;:Γ—實施例’其與前一實施例之不同處在於該 承载件係為一具有封裝底座之導線架。 請參閱第6Α圖,首弈,姐糾 ^ 岣加^ 百先棱供一具有封裝底座42之導 、、泉木41,且該封裝底座且古s〒 压W具有至少一容置空間420,而 18976 11 1290358 該封裝底座42係為塑膠材料。 請參閱第6B圖,將至少一微感測晶片32以黏著材料 • 43固定於該導線架41之封裝底座42之容置空間420中, :俾以將該微感測晶片32固定於封裝底座42之容置空間 420 内。 請參閱第6C圖,接著以銲線44打線接合以丨^ bonding)以電性連接該微感測晶片%與導線架4i。而該 銲線44之材料係為金、鋁、銅及銅鋁合金所組成群組^ 請參閱第6D圖,最後於該封裝底座42之容置空間 420頂面固定-過渡件33,以將微感測晶片犯埋置於該 封裝底座42中,其中該過渡件33係包含有第—結構網 33a、第二結構網33c、形成於第—結構網與第二結構網 之間的粉末狀填充物33b及位於第二結構網外表面之薄 膜33d ;俾可成為—嵌埋有至少一微感測晶片32之封裝 2請參閱第6D’圖,於該封裝底座42之容置空間42〇 '抑口疋另型悲之過濾件33,,其中該過濾件33,係 為於該結構網33a,外表面壓合—薄膜咖,。 而该封裝底座42之容置空間㈣中得接置至少一微 :測f片32:得藉由不同的微感測晶片32以偵測不同性 ότ - 1圍的感測對象’俾以提高使其彈性使用的範圍;並 H亥過濾件33或33,以提昇該微感測晶片32之偵測 "'又及準確性’且藉由該過遽件33或33,保護該微感 18976 12 1290358 測晶片32,俾以延長使用壽命。 本务明在於k供一種微氣體感測器之封襄結構及其 製法,可將多種微感測晶片封裝於一承載件之中,於該承 載件中設置有至少一容置空間,並將不同類別或等級之微 感測晶片接置於該容置空間中,並依感測特性之不同而裝 設適當之過濾件,使封裝後結構具有體積小、厚度薄、重 量輕及可偵測多樣性氣體等優點。並可藉由過濾件以提高 感測靈敏度及準確性,並可保護該微感測晶片以延長使用 壽命。 上述實施例僅例示性說明本發明之原理及其功效,而 非用於限制本發明。任何熟悉此項技藝之人士均可在不違 背本發明之精神及範疇下,對上述實施例進行修飾與改 雙。因此,本發明之權利保護範圍,應如後述之申請專利 【圖式簡單說明】 第1圖係為美國專利公告第4,596,975號之剖視圖· 第2圖係為美國專利公告第6,〇72,232號之剖視&·’ 第3A至3D圖係為本發明之微氣體感測器之封穿 之第一實施例剖視圖; 衣、法 第4A至4D圖係為本發明之過濾件製法之剖視圖· 第5A及5B圖係為本發明之過濾件製法之另—° • ^ 貫施例 第6A至6D圖係為本發明之微氣體感測器之封聿制、 之第二實施例剖視圖;以及 乂 /去 18976 13 1290358 第6D’圖係為第6D圖之另一實施例剖視圖。 【主要元件符號說明】 11 封裝底座 12、22 黏著劑 13 中空玻璃管 14、23 晶片 15 導腳 16、24 導線 17 金屬罩 21 封裝模組 21a 、 41 導線架 25 窗框 251 玻璃片 31 電路基板 310 容置空間 32 微感測晶片 33 、 33, 過濾、件 33a, 結構網 33a 第一結構網 33b 粉末狀填充物 33c 第二結構網 33d 、 33d, 薄膜 42 封裝底座 420 容置空間 43 黏著材料 44 銲線 14 18976It can protect the wafers for long life. Each > is also referred to in Figures 5A to 5B, which is another example of the filter member of the present invention. The difference from the other embodiments is that the embodiment does not use powder, filling, and only one transparent fabric. 33&, and film, and " as a filtering device for sensing light. Month, "5A S, first provides a structure, mesh 33a, and the structure is mechanically or chemically etched to form a mesh. Please refer to 帛5B, and then to the binding film 33d, to become a transparent filter member 33, which can provide a light transmission effect, and can be used for Protect the micro-sensing wafer below it. An embodiment of the present invention] 封强/第6A^6D 81' is the micro gas sensor of the present invention;;: Γ-embodiment' is different from the previous embodiment in that the carrier is A lead frame with a package base. Please refer to FIG. 6 , the first game, the sister correction ^ 岣 ^ ^ 千 棱 供 for a package base 42 guide, spring wood 41, and the package base and the ancient s pressure W has at least one accommodation space 420, And 18976 11 1290358 the package base 42 is made of plastic material. Referring to FIG. 6B, the at least one micro-sensing wafer 32 is fixed in the accommodating space 420 of the package base 42 of the lead frame 41 with an adhesive material 43 to fix the micro-sensing wafer 32 to the package base. 42 is accommodated in the space 420. Please refer to FIG. 6C, and then wire bonding is performed by bonding wires 44 to electrically connect the micro sensing wafer % with the lead frame 4i. The material of the bonding wire 44 is a group of gold, aluminum, copper and copper-aluminum alloy. Please refer to FIG. 6D, and finally the top-side fixing portion 420 of the packaging base 42 is fixed-transition member 33. The micro-sensing wafer is embedded in the package base 42. The transition piece 33 includes a first structural net 33a, a second structural net 33c, and a powder formed between the first structural net and the second structural net. The filler 33b and the film 33d on the outer surface of the second structure net can be formed into a package 2 in which at least one micro-sensing wafer 32 is embedded. Please refer to FIG. 6D', in the housing space 42 of the package base 42. 'Suppressing the other type of filter element 33, wherein the filter member 33 is attached to the structural net 33a, and the outer surface is pressed-film coffee. The accommodating space (4) of the package base 42 is connected to at least one micro: the f-chip 32: the different micro-sensing wafers 32 are used to detect the sensing objects of the different ότ -1 to improve The range in which it is used elastically; and the H-filter element 33 or 33 to enhance the detection "and accuracy of the micro-sensing wafer 32 and to protect the micro-feel by the over-clamp 33 or 33 18976 12 1290358 Test wafer 32, 俾 to extend the life. The present invention is directed to a sealing structure for a micro gas sensor and a method for manufacturing the same, which can package a plurality of micro sensing chips in a carrier, and at least one receiving space is disposed in the carrier, and Different types or grades of micro-sensing wafers are placed in the accommodating space, and appropriate filter elements are installed according to different sensing characteristics, so that the packaged structure has small volume, thin thickness, light weight and detectable. Advantages of diverse gases. The filter can be used to improve the sensitivity and accuracy of the sensing, and the micro-sensing wafer can be protected to extend the service life. The above-described embodiments are merely illustrative of the principles of the invention and its effects, and are not intended to limit the invention. Modifications and alterations to the above-described embodiments can be made by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of the present invention should be applied as described in the following [Simplified Description of the Drawings] Figure 1 is a cross-sectional view of U.S. Patent No. 4,596,975, and Figure 2 is U.S. Patent No. 6, No. 72,232. Fig. 3A to 3D are cross-sectional views showing a first embodiment of the sealing of the micro gas sensor of the present invention; Figs. 4A to 4D are sectional views of the filter member manufacturing method of the present invention. 5A and 5B are diagrams of the filter element manufacturing method of the present invention. FIG. 6A to FIG. 6D are cross-sectional views showing a second embodiment of the sealing method of the micro gas sensor of the present invention;乂/去18976 13 1290358 The 6D' diagram is a cross-sectional view of another embodiment of the 6D diagram. [Main component symbol description] 11 Package base 12, 22 Adhesive 13 Hollow glass tube 14, 23 Chip 15 Lead 16, 24 Conductor 17 Metal cover 21 Package module 21a, 41 Lead frame 25 Window frame 251 Glass plate 31 Circuit board 310 accommodating space 32 micro-sensing wafer 33, 33, filter, member 33a, structural net 33a first structural net 33b powdery filling 33c second structural net 33d, 33d, film 42 package base 420 accommodating space 43 adhesive material 44 welding wire 14 18976

Claims (1)

1290358 、申請專利範圍: 一種f氣體感測器之封裝製法,係包括: 提供具有至少一容置空間之承載件; 於忒谷置空間内固定至少一微感測晶片,並使該 微感測晶片與該承載件電性連接;以及 2· 3· 4· 6· 於忒承载件固定一用以封閉容置空間之過濾件。 如申租專利範圍第1項之微氣體感測器之封裝製法, 其中,該承载件係為選自電路基板、及具有封裝底座 之導線架之其中一者。 如申請專利範圍第2項之微氣體感測器之封裝製法, 其t,該封裝底座係為塑膠材料。 如申請專利範圍第1項之微氣體感測器之封裝製法, 其中,該微感測晶片係以選自表面黏著(SMD)及覆晶 (Flip Chip)之其中一者接置於該承載件之容置空間 中,以電性連接至該承載件。 工曰 如申請專利範圍第1項之微氣體感測器之封裝製法, 其中,该微感測晶片係固定於該承載件之容置空間 中,並以銲線打線接合(wire b〇nding)電性連接至嗦 承載件。 ^ 如申請專利範圍第5項之微氣體感測器之封裝掣、去, 其中,該銲線之材料係為選自金、鋁、鋼、▲丄 金之其中一者。 ^召口 如申請專利範圍第5項之微氣體感測器之封裂掣法, 其中,該微感測晶片係以黏著材料固定於該容:^ Γ曰 J 18976 15 ΐ29〇358· 中。 申%專利範圍第1項之微氣體感測器之封裝製法, • ^中,该過濾件係包括第一結構網、第二結構網、形 成於第一結構網與第i結構網之間的粉末狀填充 物、及位於第二結構網外表面之薄膜。 9·如t請專利範圍第i項之微氣體感測器之封裝製法, 其中,該過濾件之製法係包括: • 提供一第一結構網; 於第一結構網表面形成粉末狀填充物; 於該粉末狀填充物表面壓合一第二結構網;以及 於苐二結構網外表面壓合一薄膜。 1(κ =中請專利範圍第9項之微氣體感測器之封裝製法, /、中,该第一結構網係為選自金屬、塑膠、及陶瓷之 其中一者。 u·如申請專利範圍第9項之微氣體感測器之封裝製法, • *中,該第一結構網具有網孔,而該網孔係以選自機 械加工、及化學反應蝕刻之其中一者形成。 2·如申請專利範圍第9項之微氣體感測器之封裝製法, =中,該粉末狀填充物係為選自活性碳、多孔性陶 尤、及金屬氧化物之其中一者。 • ^申凊專利範圍第9項之微氣體感測器之封裝製法, 其中,该第二結構網係為選自金屬、塑膠、及陶瓷之 其中一者。 戈申咕專利範圍第9項之微氣體感測器之封裝製法, 18976 16 !29〇358· 料、中省第一結構網具有網孔’而該網孔係以選自機 * 口工、及化學反應蝕刻之其卜者形成。 •^申請專利範圍第9項之微氣體感測器之封裝製法, 再中,該薄膜係為PTFE微孔薄膜。 16·如中請專利範圍第〗項之微氣體感測器之封裝製法, 其中’該過濾件之製法係包括·· 提供一結構網;以及 於結構網外表面覆合一薄膜。 17.如申請專利範圍第16項之微氣體感測器之封裝製 法,其中,該結構網係為選自金屬、塑膠、及陶瓷之 其中一者。 18·如申請專利範圍第16項之微氣體感測器之封裝製 法,其中,該結構網具有網孔,而該網孔係以選自機 械加工、及化學反應餘刻之其中一者形成。 19·如申請專利範圍第16項之微氣體感測器之封裝製 去’其中’該薄膜係為pTFE微孔薄膜。 2〇· 一種微氣體感測器之封裝結構,係包括: 承載件,係具有至少一容置空間; 至少一微感測晶片,係固定於承載件之容置空間 内,並與該承載件電性連接;以及 過濾件’係固定於該承載件以封閉該容置空間。 21·如申請專利範圍第2〇項之微氣體感測器之封裝結 構,其中,該承載件係為選自電路基板、及具有封装 底座之導線架之其中一者。 18976 17 I29035^ 22·如申請專利範圍第20項 姓 & 械礼體感測器之封士 中,該微感測晶片係以選自 覆曰rm· ru·、 ^ 表面黏者(SMD)及 Γ llp p)之其中—者接置於該承载件之容置 空間中,以電性連接至該承料之谷置 ·=申請專利範圍第20項之微氣體感測器之封裝結 中其中,該微感測晶片係固定於該承载件之容置空 2 4中,亚透過銲線電性連接至該承载件。 申請專利範圍第23項之微氣體感測器之封襄結 及銅 ,其中,該銲線之材料係為選自金、鋁、 銘合金之其中一者。 25 j, Λ 明專利範圍第23項之微氣體感測器之封裝結 2其中,該微感測晶片係透過黏著材料固定於該容 置空間中。 如申%專利範圍第20項之微氣體感測器之封裝結 構,其中,該過濾件係包括第一結構網、第二結構網 成於苐結構網與第二結構網之間的粉末狀填充 27物、及位於第二結構網外表面之薄膜。 7·如申請專利範圍帛26 J員之微氣體感測器之封裝結 構其中’该第一結構網係為選自金屬、塑膠、及陶 瓷之其中一者。 8·如申請專利範圍第26項之微氣體感測器之封裝結 構其中’該粉末狀填充物係為選自活性碳、多孔性 勺良及金屬氧化物之其中一者。 29·如申請專利範圍第26項之微氣體感測器之封裝結 18 18976 !29〇358* 構,其中,該第二結構網係為金屬、塑膠、陶兗其中 一者。 '3〇·如申請專利範圍第26項之微氣體感測器之封裝結 構,其中,該薄膜係為PTFE微孔薄膜。 31·如申請專利範圍第20項之微氣體感測器之封裝結 構’其中,該過濾、件係包括一結構網以及形成於該結 構網外表面之薄膜。1290358, the scope of patent application: a f gas sensor packaging method, comprising: providing a carrier having at least one accommodating space; fixing at least one micro sensing wafer in the squat space, and making the micro sensing The wafer is electrically connected to the carrier; and the filter member for fixing the accommodating space is fixed to the 忒 carrier. The method of encapsulating a micro gas sensor according to claim 1, wherein the carrier is one selected from the group consisting of a circuit substrate and a lead frame having a package base. For example, in the packaging method of the micro gas sensor of claim 2, the package base is a plastic material. The method of encapsulating a micro gas sensor according to claim 1, wherein the micro sensing wafer is attached to the carrier by one of a surface adhesion (SMD) and a flip chip (Flip Chip). The accommodating space is electrically connected to the carrier. The invention relates to a method for packaging a micro gas sensor according to claim 1, wherein the micro sensing chip is fixed in an accommodating space of the carrier and is wire-bonded by wire bonding. Electrically connected to the crucible carrier. ^ The package of the micro gas sensor of claim 5, wherein the material of the wire is one selected from the group consisting of gold, aluminum, steel, and ▲ gold. ^ 召口 The method of cracking 微 of the micro gas sensor of claim 5, wherein the micro-sensing chip is fixed to the volume by an adhesive material: ^ 18 J 18976 15 ΐ29〇358·. The method for encapsulating a micro gas sensor according to item 1 of the patent scope of the patent, wherein the filter element comprises a first structural net, a second structural net, and is formed between the first structural net and the i-th structural net. a powdery filler and a film on the outer surface of the second structural web. 9. The method for encapsulating a micro gas sensor according to item i of the patent scope, wherein the method for manufacturing the filter member comprises: • providing a first structural net; forming a powdery filling on the surface of the first structural net; Pressing a second structural web on the surface of the powdery filler; and pressing a film on the outer surface of the second structural web. 1 (κ = the packaging method of the micro gas sensor of the ninth patent scope, /, wherein the first structural network is one selected from the group consisting of metal, plastic, and ceramic. In the method of encapsulating a micro gas sensor of the ninth aspect, the first structural net has a mesh, and the mesh is formed by one selected from the group consisting of mechanical processing and chemical reaction etching. The method of encapsulating a micro gas sensor according to claim 9 of the patent scope, wherein the powdery filler is one selected from the group consisting of activated carbon, porous ceramics, and metal oxides. The method for encapsulating a micro gas sensor according to the ninth aspect of the invention, wherein the second structural network is one selected from the group consisting of metal, plastic, and ceramic. The packaging method of the device, 18976 16 !29〇358· material, the first structure net of the province has a mesh ' and the mesh is formed by a machine selected from the machine * mouth work, and chemical reaction etching. The packaging method of the micro gas sensor of the ninth patent scope, and The film is a PTFE microporous film. 16· The method for packaging a micro gas sensor according to the scope of the patent, wherein the method of manufacturing the filter comprises: providing a structural net; and the outer surface of the structural net The method of encapsulating a micro gas sensor according to claim 16, wherein the structural network is one selected from the group consisting of metal, plastic, and ceramic. Item 16. The method of encapsulating a micro gas sensor according to claim 16, wherein the structural net has a mesh, and the mesh is formed by one selected from the group consisting of mechanical processing and chemical reaction. 19· The micro gas sensor of the 16th item is packaged to be 'where' the film is a pTFE microporous film. 2. A package structure of a micro gas sensor, comprising: a carrier having at least one housing At least one micro-sensing wafer is fixed in the accommodating space of the carrier and electrically connected to the carrier; and the filter member is fixed to the carrier to close the accommodating space. Patent scope The package structure of the micro gas sensor of the second aspect, wherein the carrier is one selected from the group consisting of a circuit substrate and a lead frame having a package base. 18976 17 I29035^ 22 · Patent Application No. 20 In the seal of the item surname & the body sensor, the micro-sensing chip is selected from the group consisting of 曰rm·ru·, ^SMD and llllp p) In the accommodating space of the carrier, the micro-gas sensor is electrically connected to the package of the material, wherein the micro-sensing chip is fixed to the carrier. The capacitor is electrically connected to the carrier through the bonding wire. The sealing of the micro gas sensor of claim 23 and the copper, wherein the material of the bonding wire is one selected from the group consisting of gold, aluminum and alloy. 25 j, The package of the micro gas sensor of claim 23, wherein the micro sensing wafer is fixed in the accommodating space through an adhesive material. The package structure of the micro gas sensor of claim 20, wherein the filter member comprises a first structural net, and the second structural net is formed by powder filling between the 苐 structural net and the second structural net. 27, and a film on the outer surface of the second structural net. 7. The package structure of the micro gas sensor of claim 26, wherein the first structural network is one selected from the group consisting of metal, plastic, and ceramic. 8. The package structure of the micro gas sensor of claim 26, wherein the powdery filler is one selected from the group consisting of activated carbon, porous scoop, and metal oxide. 29. The package of the micro gas sensor of claim 26 is 18 18976 !29〇358*, wherein the second structural network is one of metal, plastic and ceramic. The package structure of the micro gas sensor of claim 26, wherein the film is a PTFE microporous film. 31. The package structure of a micro gas sensor according to claim 20, wherein the filter comprises a structural mesh and a film formed on an outer surface of the structural mesh. 19 1897619 18976
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Cited By (3)

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Publication number Priority date Publication date Assignee Title
TWI423352B (en) * 2008-10-15 2014-01-11 Chipbond Technology Corp Method for manufacturing gas sensor
EP2731129A1 (en) 2012-11-07 2014-05-14 ams AG Molded semiconductor sensor device and method of producing the same at a wafer-level
CN110579516A (en) * 2019-09-02 2019-12-17 青岛歌尔智能传感器有限公司 nitrogen dioxide gas detection device, manufacturing method thereof and electronic product

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Publication number Priority date Publication date Assignee Title
DE102019102836B4 (en) 2019-02-05 2023-02-02 Infineon Technologies Ag METHODS OF PANEL BONDING ACTIONS AND ELECTRONIC DEVICES WITH CAVIES

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI423352B (en) * 2008-10-15 2014-01-11 Chipbond Technology Corp Method for manufacturing gas sensor
EP2731129A1 (en) 2012-11-07 2014-05-14 ams AG Molded semiconductor sensor device and method of producing the same at a wafer-level
US9543245B2 (en) 2012-11-07 2017-01-10 Ams Ag Semiconductor sensor device and method of producing a semiconductor sensor device
CN110579516A (en) * 2019-09-02 2019-12-17 青岛歌尔智能传感器有限公司 nitrogen dioxide gas detection device, manufacturing method thereof and electronic product

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