CN106337169A - 薄膜沉积装置 - Google Patents

薄膜沉积装置 Download PDF

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CN106337169A
CN106337169A CN201610523486.6A CN201610523486A CN106337169A CN 106337169 A CN106337169 A CN 106337169A CN 201610523486 A CN201610523486 A CN 201610523486A CN 106337169 A CN106337169 A CN 106337169A
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hole
shower nozzle
gas
nozzle component
flow controller
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CN106337169B (zh
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张显秀
金大渊
李政镐
金永勋
李承燮
金友燦
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ASM IP Holding BV
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Abstract

一种反应室包括：反应器壁；接触所述反应器壁以界定反应空间的基座；和在所述反应器壁与所述基座之间堆叠的气流控制装置和喷头构件。喷头构件包括气体通道和喷头。贯穿所述气流控制装置的突出横向部分而形成贯穿孔，并且所述反应器壁与所述喷头构件的横向部分彼此隔开以形成排气路径。在所述排气路径中剩余的气体通过所述贯穿孔和在所述反应器壁的上部中形成的出气口排出。所述反应室提供反应空间和所述排气路径，其中去除了不必要的区域以使气体快速地从一种改为另一种，因此可以高效率和高生产率完成原子层沉积。

Description

薄膜沉积装置
相关申请的交叉引用
本申请要求2015年7月7日在韩国知识产权局提交的韩国专利申请号10-2015-0096795的优先权，该韩国专利申请的公开内容通过引用全部并入本文。
技术领域
一个或更多个实施方式涉及气流控制装置、包括所述气流控制装置的喷头组件和包括所述喷头组件的半导体制造设备(诸如薄膜沉积设备)。
背景技术
一个或更多个示例性实施方式涉及半导体制造设备(诸如沉积设备)，更具体地，涉及在其中发生化学反应的反应室。
沉积设备的反应室设有在其中发生化学反应的空间，而且已开发出各种反应室。这种反应室的例子包括：喷头型反应室，在其中沿垂直于衬底的方向供应反应气；和侧流型反应室，在其中沿平行于衬底的方向供应反应气。在喷头型反应室中，在从中心到边缘的方向上向反应器均匀地供应反应气，从而形成相对均匀的薄膜。侧流型反应室具有相对简单的结构，从而能够在反应气之间快速切换并使得可以减小反应空间。
发明内容
一个或更多个实施方式包括反应室，例如，包括喷头和辅助装置的喷头型反应室。该反应室为原子层沉积提供尺寸上经优化缩小的反应空间，并且废气很快地从反应室排出。
另外的方面将部分在以下说明书中陈述，并且部分可从说明书中明显得出，或可以通过所提供实施方式的实践来习得。
根据一个或更多个实施方式，提供一种气流控制装置。该气流控制装置可以包括：包括进气端口并从所述进气端口延伸的板；和从所述板突起并包括贯穿形成的多个孔的侧壁。可选地，所述板可以包括绝缘材料。
根据实施方式，在所述气流控制装置中，由所述板和所述侧壁形成从所述侧壁凹进的空间，并且从所述多个孔到所述凹进的空间限定排气路径空间。
根据一个或更多个实施方式，提供一种喷头组件。所述喷头组件可以包括：气流控制装置；和从所述板的底侧连接至进气端口的喷头。
根据实施方式，所述喷头组件可以包括气体通道和喷头，并且所述气体通道可以位于所述进气端口与所述喷头之间并通过机械连接件连接至所述喷头。
根据另一实施方式，在喷头组件中，可以在所述气体通道与所述喷头之间形成气体流路。此外，可以形成将所述气流控制装置的所述进气端口连接至所述气体流路的进气路径(参见附图中气体通道307的中心区域)。
根据一个或更多个实施方式，一种半导体制造设备(诸如反应室)包括：反应器壁；气流控制装置；喷头构件；和基座(susceptor)。在所述反应器壁的上部设置进气口和出气口，并且所述进气口连接至穿过所述反应器壁、所述气流控制装置和所述喷头构件的中心部分形成的进气端口从而向所述喷头构件供应反应气。所述气流控制装置包括：从其贯穿形成多个贯穿孔的突出侧壁；和由所述侧壁环绕的板。在所述气流控制装置与所述反应器壁之间的区域和所述喷头构件的侧壁与所述反应器壁之间的区域中形成排气路径(也就是排气路径空间)，并且通过所述喷头构件被供应至置于所述基座上的衬底的反应气通过所述排气路径和穿过所述气流控制装置的所述侧壁形成的所述贯穿孔而排到设置在所述反应器壁的上部的所述出气口。所述出气口与穿过所述气流控制装置的中心部分形成的所述进气端口不对称，并且所述贯穿孔的尺寸和所述贯穿孔之间的间隔根据所述贯穿孔相对于所述出气口的位置而不同从而得到均匀的排气效率。在实施方式中的半导体制造设备(诸如反应室)中，气流控制装置和喷头构件是堆叠的，并且在所述气流控制装置与所述反应器壁之间的区域和在所述所述气流控制装置与所述喷头构件之间的区域中形成凹槽，以容纳密封构件诸如O型环。反应器壁和喷头构件彼此隔开以形成排气路径。射频(RF)棒被插入穿过气流控制装置形成的其它贯穿孔中并连接至所述喷头构件从而在等离子体工艺期间向所述喷头构件供应RF功率。
根据实施方式，在半导体制造设备中，所述进气口和所述出气口可以连接至顶盖。此外，所述顶盖可以包括加热元件。
根据一个或更多个实施方式，半导体制造设备包括：包括至少两个反应室的外腔室；所述至少两个反应室共用的至少一个供气单元；和配置成排气的至少一个排气泵。
例如，半导体制造设备可以包括：包括至少两个进气口和至少两个出气口的顶盖；和至少两个反应室，其每个都连接至与进气口中的至少一个和出气口中的至少一个相连的顶盖，其中所述反应室共用供应原材料气体和反应气中的至少一种的供气单元和至少一个排气泵。
附图说明
从以下结合附图对实施方式的描述中可明白并更容易理解这些和/或其它方面，其中：
图1是示出根据实施方式的反应室的视图；
图2是示出在根据实施方式的反应室中反应气如何流动的视图；
图3A是示出根据实施方式的气流控制装置的立体图；
图3B是示出根据实施方式的气流控制装置和喷头构件的组合结构的横截面视图；
图4A是示出根据实施方式的反应室的局部横截面视图；
图4B是示出根据另一实施方式的反应室的局部横截面视图；
图4C是示出根据另一实施方式的反应室的局部横截面视图；
图5A是示出根据实施方式的气流控制装置的平面图；
图5B是示出根据另一实施方式的气流控制装置的平面图；
图6是示出根据另一实施方式的反应室的横截面视图；
图7A示出根据另一实施方式的反应室的横截面视图；
图7B是从另一方向示出图7A中所示反应室的另一横截面视图；以及
图8是示出根据另一实施方式的反应室的横截面视图。
具体实施方式
现在将详细参照实施方式，在附图中示出所述实施方式的示例，其中在所有附图中，相同的附图标记表示相同的元件。在这方面，本发明实施方式可以具有不同的形式并不应视为限于本文中的描述。因此，下面仅参照附图描述实施方式以用于解释本说明书的各方面。本文中所使用的术语“和/或”包括一个或更多个相关的所列项的任何和所有组合。在元素列表之后的表述例如“至少一个”修饰整个元素列表而并非修饰该列表的单个元素。
将通过以下参照附图给出的描述来阐述本发明构思的特征以及其实施方法。然而，实施方式可以具有不同的形式而并不应视为限于本文中所述的描述。相反，提供这些实施方式是为了使得本公开对本领域技术人员来说将是充分并完整的，并且将充分表达本发明构思的范围。因此，本发明构思的范围应由权利要求界定。
在下文中，将参照附图描述实施方式。
首先，现在将关于图1根据实施方式来描述沉积设备。图1是示出根据实施方式的反应室100的横截面视图。参照图1，由于反应器壁101与基座103彼此相接触，所以在反应室100中形成反应空间125。气流控制装置105和喷头构件(气体注入器)109设置在反应器壁101的上部与基座103之间。喷头构件109可以是一体式构件，或者可以是多件式构件，包括其中形成有气体注入孔133的单独部件。气流控制装置105和喷头构件109被堆叠，并且气流控制装置105包括其中形成有多个贯穿孔111的侧壁123。在反应器壁101与气流控制装置105之间的区域和气流控制装置105与喷头构件109之间的区域中形成凹槽127，129和131，从而容纳密封构件诸如O型环。由于通过密封构件进行真空密封，所以外部气体不会进入反应室100中，或反应空间125中的反应气或排气路径中剩余的气体不会泄露到不期望的区域中。
在等离子体工艺期间，喷头构件109可以用作电极。为此，喷头构件109可以包括金属材料诸如铝(Al)。此外，射频(RF)棒713(参见图7B)通过穿过反应器壁101的上部和气流控制装置105而形成的RF棒孔303(参见图3A)而机械连接至喷头构件109，从而将由外部等离子体发生器(未示出)产生的等离子体供应至喷头构件109。此外，气流控制装置105可以包括绝缘材料诸如陶瓷材料，从而使得用作等离子体电极的喷头构件109与反应器壁101绝缘。如图1所示，进气端口113形成为穿过反应器壁101的上部和气流控制装置105的中心部分，并且，此外在喷头构件109中形成气体流路119。因此，从外部供气单元(未示出)通过进气端口113供应的反应气被均匀分布至喷头构件109的气体注入孔133。此外，如图1所示，在反应器壁101的上部以与进气端口113呈非对称关系设置出气口115。然而，出气口115与进气端口113可以对称布置(未示出)。此外，反应器壁101与气流控制装置105和喷头构件109的侧壁隔开，因此排气路径117可以形成于它们之间。在工艺进行之后，剩余气体可以通过排气路径117排出。
图2是示出在根据实施方式的反应室100中反应气如何流动的视图。在图2中，箭头表示气体流动。从外部供气单元(未示出)供应至进气端口113的反应气可以通过气体流路119均匀地流到喷头构件109的气体注入孔133。反应气可以在反应空间125中或衬底(未示出)上发生化学反应以在衬底上形成薄膜。在形成薄膜之后，剩余气体可以在穿过形成于反应器壁101和喷头构件109的侧壁之间的排气路径117并穿过形成于气流控制装置105的侧壁123中的贯穿孔111之后，流到气流控制装置105的内部空间，然后所述剩余气体可以通过出气口115排出。
在下文中，将参照图3A和图3B描述反应室100的各个部分。
图3A是示出根据实施方式的气流控制装置105的立体图。参照图3A，气流控制装置105包括侧壁123、进气端口113、由侧壁123环绕的板301、RF棒孔303、螺孔305、贯穿孔111和容纳密封构件诸如O型环的凹槽127。在图3A中，板301具有由侧壁123环绕的下凹内部。进气端口113位于气流控制装置105的一部分上用于引入外部反应气，围绕进气端口113形成数量为至少两个的螺孔305用以容纳机械连接件诸如螺钉715(参见图7B)，从而将气流控制装置105和喷头构件109彼此连接。在气流控制装置105的部分中形成RF棒孔303，因此连接至外部等离子体供应单元(未示出)的RF棒713(参见图7B)可以通过RF棒孔303连接至在气流控制装置105下面的喷头构件109。
在图3A中，形成两个RF棒孔303从而通过将RF棒引入各自的孔303中来改善等离子体功率(plasma power)在反应空间125中的均匀性。然而，与图3中不同，可以使用一个或多于两个的RF棒713，并可以形成对应于所述RF棒713的RF棒孔303。此外，参照图3A，RF棒孔303形成于侧壁123和螺孔305之间。然而，本发明构思不限于此。例如，如同螺孔305，RF棒孔303可以设置在进气端口113周围。
与衬底反应之后剩余的气体可以通过排气路径117和形成于气流控制装置105的侧壁123中的贯穿孔111而流向气流控制装置105的板301。然后，该气体可以流经板301的内部空间流向出气口115，在这里气体可以被排到外部。密封构件诸如O型环被插入形成于侧壁123的上侧中的凹槽127内以用于在反应器壁101与气流控制装置105之间进行真空密封，因此排气路径117中剩余的气体可以仅通过贯穿孔111被引入气流控制装置105的板301中。此外，虽然在图3A中未示出，但是可以在反应器壁101的上端与RF棒孔303之间的区域和在反应器壁101的上端与螺孔305之间的区域中形成其它的凹槽717和721(参见图7B)用以容纳密封构件诸如O型环。因此，可以提供真空密封以防止剩余气体通过非预期途径泄露到外部。
图3B是示出通过将气流控制装置105和喷头构件109堆叠在一起而形成的喷头组件的横截面视图。参见图3B，喷头构件109是多件式构件，其中气体通道307和喷头309堆叠在一起。使用机械连接件诸如螺钉311来连接气体通道307和喷头309。如果在等离子体工艺期间喷头构件109用作电极，则喷头309可以包括金属材料。此外，RF棒713(参见图7B)可以通过RF棒孔303(参见图7B)机械连接至气体通道307。
图4A、图4B和图4C是示出根据实施方式的反应室100的局部横截面视图。参见图4A，反应器壁101与喷头构件109彼此隔开以形成排气路径117，并且贯穿孔111形成在气流控制装置105的侧壁123中。在与反应器壁101接触的、侧壁123的上部和喷头构件109的接触部中形成凹槽127和131，因此可以将密封构件诸如O型环插入凹槽127和131中用于真空密封。因此，在排气路径117中剩余的气体可以仅通过贯穿孔111被引入气流控制装置105中。参照图4A，在垂直于排气路径117的方向上形成贯穿孔111。然而，如图4B所示，贯穿孔111的入口401可以朝向排气路径117倾斜。在这种情况下，贯穿孔111的入口401相对于剩余气体在排气路径117中流动的方向的角度θ可以小于直角。因此，在入口401周围可以减少湍流，因此，可以防止排气效率的降低。此外，如图4C所示，在其中形成有贯穿孔111的、侧壁123的一部分可以具有比气流控制装置105的边缘部分的宽度(B)更小的宽度(A)。在这种情况下，剩余气体可直接流入贯穿孔111的入口402而不经过弯曲路径。因此，当剩余气体流入贯穿孔111中时，在贯穿孔111的入口402周围可以保持层流而不会有湍流，因此剩余气体可被高效流畅地排出。虽然未示出，但可以改变反应器壁101或气流控制装置105的形状以防止湍流。例如，可以使气流控制装置105的边缘部分C(参见图4C)倒角化。
除了在附图中示出的结构，可以在本发明构思的范围内作出各种修改。例如，在图4A至4C中所示的实施方式中，侧壁123沿与板301的延伸方向不同的方向突出。然而，侧壁123可以沿与板301的延伸方向相同的方向突出。在这种情况下，可以在与板301的延伸方向不同的方向上穿过侧壁123而形成贯穿孔111。
图5A和图5B是气流控制装置105的平面图，示出了在气流控制装置105的侧壁123中形成的贯穿孔111的分布与尺寸。参照图5A，贯穿孔111的尺寸相同。然而，与远离出气口115的B、C区域相比，在邻近出气口115的A区域中，在侧壁123中形成的贯穿孔111之间的距离更大。参照图5A，由于位于与出气口115相对的C区域中的贯穿孔111具有相对较低的排气效率，所以贯穿孔111的设置密集。然而，由于位于邻近出气口115的A区域中的贯穿孔111的排气效率相对较高，所以贯穿孔111的设置密集度较低。因此，排气效率总体上可以是均匀的。参照图5B，虽然贯穿孔111以均匀间隔设置，但贯穿孔111根据它们相对于出气口115的位置而具有不同的尺寸。即，由于位于邻近出气口115的区域A中的贯穿孔111的排气效率的较高，所以贯穿孔111的尺寸相对较小。然而，由于位于与出气口115相对的区域C中的贯穿孔111的排气效率的较低，所以贯穿孔111的尺寸相对较大。因此，排气效率总体上可以是均匀的。
虽然在图5A和图5B中示出一个出气口115，但可以设置多个出气口115。在这种情况下，可以对称地或非对称地布置所述出气口115。此外，如上所述，为了得到均匀的排气效率，可以调整贯穿孔111的尺寸、贯穿孔111的形状和贯穿孔111之间的距离中的至少一个。例如，与相对远离出气口115的贯穿孔111相比，相对邻近出气口115的贯穿孔111可以具有相对小的尺寸或可以以相对大的间隔布置。
图6是示出根据另一实施方式的反应室100的横截面视图。图6示出其中反应室100被外腔室601包围的双腔室结构。反应室100机械地固定到外腔室601的上端(也就是外腔室601的顶盖)。外腔室601的内部压力可以设成低于反应室100的内部压力，从而防止外腔室601中填充的气体诸如氩气通过反应器壁101与基座103之间的间隙进入到反应室100中。在外腔室601的侧壁中形成入口(未示出，参见图8)，用于将衬底送入/送出反应室100。基座103由基座支架605支撑。基座支架605包括衬底支撑销(未示出)。基座支架605是可垂直移动并可旋转的。因此，当载入/载出衬底时，降低基座支架605以打开反应空间125。例如，通过衬底支撑销(未示出)顶起衬底，并通过形成在外腔室601的侧壁中的入口(未示出)将载体诸如传送臂伸入外腔室601中从而卸载衬底。在工艺进行期间，抬起基座支架605，同时降低支撑衬底的衬底支撑销从而将衬底放在基座103上。然后，基座103与反应器壁101的下部相接触，从而形成反应空间125。
图7A和图7B是示出根据另一实施方式的、对图6中所示反应室100的修改的视图。参照图7A，反应室100的反应器壁101通过使用机械连接件诸如螺钉707而连接至外腔室上端的顶盖701。此外，可以在反应器壁101的上端布置加热器诸如加热元件用于加热反应器壁101。如果使用加热元件加热反应器壁101，则在排气路径117中或气流控制装置105周围剩余的气体可以被快速加热或转换成硬膜，因此剩余气体不会成为在反应室100中漂浮的污染物，从而可以防止污染反应空间。参照图7A，在进气端口113的上端另外设置进气口705。如果在进气口705的一侧形成多个进气孔(未示出)，则可以向反应室100供应大量的气体。此外，参照图7A，不同于在图1中描述的一体式喷头构件109，使用了由多个可分离部件形成的喷头构件109。例如，喷头构件109具有堆叠结构，其包括通过机械连接件诸如螺钉而彼此连接的气体通道307和喷头309。由于多件式喷头构件109具有多件式结构，所以可以容易地对喷头309进行安装、拆卸和定期维修。
图7B是从另一方向示出图7A中所示反应室100的另一横截面视图。参照图7B，喷头构件109通过机械连接件诸如715连接至气流控制装置105。可以在气流控制装置105的侧壁与反应器壁101上端之间的区域、RF棒孔303周围的突起与反应器壁101上端之间的区域、以及螺孔305周围的突起与反应器壁101上端之间的区域中形成凹槽，并且可以将密封构件诸如O型环插入凹槽中用于真空密封。
图8是示出根据另一实施方式的反应室100的横截面视图。参照图8，在由顶盖801与外腔室803形成的腔室内部区域805中设置多个反应室100。在顶盖801上设置每个反应室100的气流控制装置、喷头构件、进气端口和出气口。反应室100共用同一个供气单元和同一个排气泵，因此可以对多个衬底同时进行相同的工艺处理从而提高生产率。
可以对多个衬底同时进行如下相同的工艺。首先，通过外腔室803的入口将载体诸如传送臂伸入腔室内部区域805中从而将衬底加载到多个基座103上。接下来，外腔室803的腔室内部区域805被排空或用惰性气体诸如氩气填充。接着，基座103与反应器壁的下侧接触，从而形成反应空间。腔室内部区域805的压力可以设成低于反应室100的内部压力。
可替选地，反应室100可以不共用供气单元和排气泵，而可以连接至单独的供气单元和排气泵从而同时进行不同的工艺。例如，当依次将衬底移至反应室100的同时，可以进行复合薄膜形成工艺以在衬底上沉积薄膜。在这种情况下，可以快速进行复合薄膜形成工艺，同时将暴露于空气或等待时间降到最低限度。
如上所述，根据一个或更多个上述实施方式，反应气被均匀地供至反应室中的衬底，因此可以在衬底上形成均匀的薄膜。此外，由于沿喷头的上部形成排气路径，所以可以去除不必要的空间从而减少反应空间的尺寸。因此，反应气可以从一种快速改为另一种，并可以减少由剩余气体引起的污染，从而可以以高生产率和高效率进行原子层沉积工艺。
应当理解，本文中描述的实施方式应仅考虑为描述意义并无限制目的。各实施方式中对特征或各方面的描述应典型地考虑为对在其它实施方式中的其它类似的特点或方面可用。
当已参照附图描述了一个或更多个实施方式时，本领域技术人员将理解不背离由所附权利要求所界定的本发明的精神和范围可以在此作出形式和细节上的各种改变。

Claims (20)

1.一种气流控制装置，包括：
板，包括进气端口并从所述进气端口延伸；和
侧壁，从所述板突出并包括贯穿形成的多个孔。
2.根据权利要求1所述的气流控制装置，其中由所述板和所述侧壁形成从所述侧壁凹进的空间，并且
其中，从所述多个孔到所述凹进的空间限定排气路径空间。
3.根据权利要求1所述的气流控制装置，其中所述多个孔包括第一孔和第二孔，并且
所述第一孔的尺寸、所述第一孔的形状和所述第一孔之间的距离中的至少一个与所述第二孔的不同。
4.根据权利要求1所述的气流控制装置，其中所述侧壁具有能够容纳密封构件的形状。
5.一种喷头组件，包括：
根据权利要求1所述的气流控制装置；和
从所述板的底侧连接至所述进气端口的喷头。
6.根据权利要求5所述的喷头组件，还包括在所述进气端口与所述喷头之间的气体通道，其通过机械连接件连接至所述喷头。
7.根据权利要求6所述的喷头组件，还包括在所述气体通道与所述喷头之间的气体流路。
8.根据权利要求7所述的喷头组件，还包括将所述气流控制装置的所述进气端口连接至所述气体流路的进气路径。
9.根据权利要求8所述的喷头组件，还包括在所述气流控制装置与所述气体通道之间的密封构件。
10.根据权利要求8所述的喷头组件，其中所述气流控制装置还包括贯穿所述板形成的至少一个螺孔和至少一个射频(RF)棒孔，并且
所述气流控制装置和所述气体通道通过设置在所述螺孔中的连接件而彼此机械连接。
11.一种半导体制造设备，包括：
反应器壁；
板，其连接至所述反应器壁并包括进气端口，所述板从所述进气端口延伸；
侧壁，其从所述板突起并包括穿过其形成的多个孔；和
喷头构件，其从所述板的底侧连接至所述进气端口，
其中，所述进气端口贯穿所述板形成，并且在所述喷头构件与所述反应器壁之间的区域中和所述板与所述反应器壁之间的区域中形成排气路径。
12.根据权利要求11所述的半导体制造设备，其中从所述喷头构件和所述板的外侧经由所述多个孔到出气口限定排气路径空间。
13.根据权利要求11所述的半导体制造设备，其中所述板包括绝缘材料。
14.根据权利要求11所述的半导体制造设备，其中出气口与所述进气端口非对称地布置，
所述多个孔包括第一孔和第二孔，并且
所述第一孔的尺寸、所述第一孔的形状和所述第一孔之间的距离中的至少一个与所述第二孔的不同。
15.根据权利要求11所述的半导体制造设备，其中所述多个孔包括在与出气口相距第一距离内布置的第一孔和距离所述出气口超过所述第一距离的第二孔，并且
所述第一孔小于所述第二孔，或以相比所述第二孔之间的间隔更大的间隔布置。
16.根据权利要求11所述的半导体制造设备，还包括：
顶盖；
腔室，其容纳所述板、所述侧壁和所述喷头构件；和
基座，其设置在所述喷头构件的下方，
其中，从所述喷头构件向所述基座注入的反应气通过所述喷头构件和所述反应器壁之间形成的所述排气路径、所述多个孔和所述出气口排出。
17.根据权利要求16所述的半导体制造设备，还包括在所述腔室与所述侧壁之间的密封构件。
18.根据权利要求16所述的半导体制造设备，还包括在所述板与气体通道之间的密封构件，其中所述喷头构件包括气体通道和喷头。
19.根据权利要求18所述的半导体制造设备，还包括在所述气体通道与所述喷头之间的气体流路。
20.根据权利要求16所述的半导体制造设备，其中所述顶盖包括加热元件。
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