CN106159020A - 使用异质结太阳能电池的双面光伏模块 - Google Patents

使用异质结太阳能电池的双面光伏模块 Download PDF

Info

Publication number
CN106159020A
CN106159020A CN201510166887.6A CN201510166887A CN106159020A CN 106159020 A CN106159020 A CN 106159020A CN 201510166887 A CN201510166887 A CN 201510166887A CN 106159020 A CN106159020 A CN 106159020A
Authority
CN
China
Prior art keywords
solaode
solar panel
metal grate
solar
bus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201510166887.6A
Other languages
English (en)
Other versions
CN106159020B (zh
Inventor
J·B·衡
C·埃本
B·杨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tesla Corp
Tesla Inc
Original Assignee
Silevo Solar Power Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silevo Solar Power Inc filed Critical Silevo Solar Power Inc
Publication of CN106159020A publication Critical patent/CN106159020A/zh
Application granted granted Critical
Publication of CN106159020B publication Critical patent/CN106159020B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H01L31/02013—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising output lead wires elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/30—Electrical components
    • H02S40/34—Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Abstract

本发明的一个实施例提供一种双面太阳能面板。双面太阳能面板包括：太阳能面板的第一面上的第一透明盖子；太阳能面板的第二面上的第二透明盖子；夹在第一盖子与第二盖子之间的多个太阳能电池；和用于输出由太阳能面板产生的电力的一个或更多个引线。引线位于太阳能面板的边缘上，而并不遮蔽太阳能面板的第一面和第二面。各太阳能电池包含：光伏结构；光伏结构的第一面上的第一金属栅格，该第一金属栅格允许太阳能电池从光伏结构的第一面吸收光；和光伏结构的第二面上的第二金属栅格，该第二金属栅格允许太阳能电池从光伏结构的第二面吸收光。

Description

使用异质结太阳能电池的双面光伏模块
技术领域
本公开一般涉及太阳能面板的制造。具体而言，本公开涉及使用异质结太阳能电池的双面光伏模块的制造。
背景技术
化石燃料对于环境的负面影响以及其上升的成本已导致迫切需要更清洁、更廉价的替代能源。在不同形式的替代能源中，太阳能电力由于其清洁性和广泛的可用性而被看好。
太阳能电池通过利用光伏效应将光转换成电。存在几种基本的太阳能电池结构，包括单p-n结、p-i-n/n-i-p和多结。典型的单p-n结结构包含p型掺杂层和n型掺杂层。具有单p-n结的太阳能电池可以是同质结太阳能电池或异质结太阳能电池。如果p掺杂层和n掺杂层均由类似的材料(带隙相同的材料)制成，那么太阳能电池被称为同质结太阳能电池。相反，异质结太阳能电池包括至少两个具有不同带隙的材料层。p-i-n/n-i-p结构包含p型掺杂层、n型掺杂层和夹在p层与n层之间的本征(未掺杂)半导体层(i层)。多结结构包含相互堆叠的具有不同带隙的多个单结结构。
在太阳能电池中，光在产生载流子的p-n结附近被吸收。载流子扩散到p-n结中并且通过内置的电场分开，由此产生跨器件和外部电路的电流。确定太阳能电池质量的重要指标是其能量转换效率，该能量转换效率被定义为(从吸收光到电能)转换的电力与当太阳能电池与电路连接时所收集的电力之间的比率。
对于同质结太阳能电池，由于悬空键(dangling bond)的存在而导致的电池表面上的少数载流子再组合可明显降低太阳能电池效率；因此，需要良好的表面钝化工艺。此外，通过掺杂剂扩散形成的相对较厚、重度掺杂的发射极层可大大减少对于短波长光的吸收。相比之下，异质结太阳能电池(诸如Si异质结(SHJ)太阳能电池)是有利的。图1给出示出示例性SHJ太阳能电池(现有技术)的示图。SHJ太阳能电池100包括前栅格电极(grid electrode)102、重度掺杂非晶硅(a-Si)发射极层104、本征a-Si层106、结晶-Si基板108和背栅极110。图1中的箭头表示入射太阳光。由于在a-Si层106与晶体硅(c-Si)层108之间存在固有带隙偏移，因此，可以使用a-Si层106，通过创建少数载流子的势垒来减少表面再组合速度。a-Si层106还通过修复现有的Si悬空键来钝化结晶硅层108的表面。并且，重度掺杂a-Si发射极层104的厚度可比同质结太阳能电池的厚度薄得多。因此，SHJ太阳能电池可以提供更高的效率，以及更高的开路电压(Voc)和更大的短路电流(Jsc)。
为了实现更高的效率，需要改进太阳能电池结构。此外，由于在实践中太阳能电池被互连、组装和封装在一起以形成太阳能面板，因此，同样重要的是设计能够从其太阳能电池提取尽可能多电力的太阳能面板。
发明内容
本发明的一个实施例提供一种双面太阳能面板。双面太阳能面板包括：太阳能面板的第一面上的第一透明盖子；太阳能面板的第二面上的第二透明盖子；夹在第一盖子与第二盖子之间的多个太阳能电池；和用于输出通过太阳能面板产生的电力的一个或更多个引线。引线位于太阳能面板的边缘上，且不遮蔽太阳能面板的第一面和第二面。各太阳能电池包含：光伏结构；光伏结构的第一面上的第一金属栅格，该第一金属栅格允许太阳能电池从光伏结构的第一面吸收光；和光伏结构的第二面上的第二金属栅格，该第二金属栅格允许太阳能电池从光伏结构的第二面吸收光。
在本实施例的一个变体中，太阳能电池是包含位于光伏结构的第一面上的第一透明导电氧化物层和位于光伏结构的第二面上的第二透明导电氧化物层的双面异质结太阳能电池。
在另一变体中，第一和第二透明导电氧化物层具有不同的厚度。第一透明导电氧化物层的厚度被配置为用于通过光伏结构吸收大致直射白光，并且第二透明导电氧化物层的厚度被配置为用于通过光伏结构吸收大致散射或扩散光。
在本实施例的一个变体中，第一和第二金属栅格具有不同的指线间距。
在本实施例的一个变体中，第一金属栅格包含位于太阳能电池的第一面上的边缘处的第一边缘母线，并且第二金属栅格包含位于太阳能电池的第二面上的相对边缘处的第二边缘母线。
在另一变体中，两个相邻太阳能电池以如下方式被布置：一个太阳能电池的第一面上的第一边缘母线直接接触另一个太阳能电池的第二面上的第二边缘母线，由此有利于两个相邻太阳能电池之间的串联连接。
在本实施例的一个变体中，第一和第二金属栅格的母线被光捕获膜覆盖。
在本实施例的一个变体中，第二盖子上的不被太阳能电池覆盖的区域被光捕获膜覆盖。
在本实施例的一个变体中，太阳能面板是无框架的。
在本实施例的一个变体中，太阳能面板还包含多个最大功率点跟踪器件。各最大功率点跟踪器件与各太阳能电池或太阳能电池组耦合。
在本实施例的一个变体中，第一盖子包含玻璃，并且第二盖子包含玻璃或聚合物。
附图说明
图1给出示出示例性SHJ太阳能电池(现有技术)的示图。
图2给出示出根据本发明的实施例的示例性双面隧穿结太阳能电池的示图。
图3A给出示出具有双母线(busbar)的示例性常规金属栅格图案的示图。
图3B给出示出具有单个中心母线的示例性金属栅格图案的示图。
图3C给出示出具有单个边缘母线的示例性金属栅格图案的示图。
图4给出示出常规太阳能面板的后面的示图。
图5给出示出根据本发明的实施例的示例性双面太阳能面板的后面的示图。
图6A给出示出具有单个边缘母线配置的串联连接的太阳能电池的线串的断面图的示图。
图6B给出示出具有单个边缘母线配置的串联连接的太阳能电池的线串的断面图的示图。
图6C给出示出具有单个边缘母线配置的串联连接的太阳能电池的线串的断面图的示图。
图7给出示出根据本发明的实施例的示例性双面太阳能面板的后面的示图。
图8给出示出根据本发明的实施例的示例性双面太阳能面板的后面的示图。
图9给出示出根据本发明的实施例的双面太阳能面板的制造过程的流程图。
在附图中，类似的附图标记指的是相同的附图元素。
具体实施方式
进行以下的描述，以使得本领域技术人员能够理解和利用实施例，并且，这些描述是在具体的应用及其需要的背景下提供的。本领域技术人员容易想到公开的实施例的各种变体，并且，在不脱离本公开的精神和范围的情况下，这里限定的一般原理可被应用于其它实施例和应用。因此，本发明不限于所示的实施例，而是符合与这里公开的原理和特征一致的最宽范围。
概述
本发明的实施例提供被优化以用于双面操作的太阳能面板。具体而言，太阳能面板包含透明玻璃前盖子和透明玻璃或聚合物后盖子。可包含双面异质结太阳能电池的互连的异质结太阳能电池被夹在两个盖子之间。太阳能面板的布线被仔细设计以减少或最小化面板的后面上的遮蔽效应(shading effect)。例如，作为使用附接于面板的后面处的接合盒(junction box)的替代，耦合太阳能电池的线串和通常包括在接合盒中的部件的电气布线被放置在面板的边缘上，或者接线盒在不遮蔽任何太阳能电池的情况下被附接到面板的后面。为了增加由太阳能电池吸收的光量，光捕获膜被施加到面板上的不被电池覆盖的位置上以及母线/片带(tabbing ribbon)的顶表面上。进行其它的努力以进一步减少串联电阻，诸如使用具有单个母线配置的太阳能电池以及以叠瓦状(shingled)图案布置这种太阳能电池。
在本公开中，术语“面向太阳面”和“前面”指的是太阳能电池接收太阳光直射的面。术语“背离太阳光直射的面”和“后面”指的是太阳能电池的与面向太阳面相反的面。但是，这些术语不应解释为意味着太阳光在后面上不被吸收。这里描述的太阳能电池和太阳能面板可在前面和后面上接收光。太阳能电池可从其后面吸收散射太阳光，特别是当太阳能面板从平坦表面升起时，诸如在太阳能发电场环境中。在某些情况下，诸如被放置在沙漠环境中，双面太阳能面板可被垂直安装，以不仅吸收两面的光，而且防止灰尘颗粒的积聚。在又一种情况下，诸如被放置在大雪环境中，双面太阳能面板可以平坦倾斜配置被安装并且能够显著防止面向太阳面上的雪积聚，原因是，后面仍吸收散射光，从而使得面板充分加热以熔化面向太阳面上的雪。
双面异质结太阳能电池
已经表明，双面异质结太阳能电池可提供优异的性能，原因是，太阳能电池基极层的两个表面上的内置的异质结场使表面钝化，由此防止前结和后结上的再组合。并且，某些异质结太阳能电池还包括可在不损害载流子收集效率的情况下有效地钝化基极层的表面的量子隧穿势垒(QTB)层，由此进一步提高太阳能电池性能。
图2给出示出根据本发明的实施例的示例性双面隧穿结太阳能电池的示图。双面隧穿结太阳能电池200包含基极层202、覆盖基极层202的两个表面并且钝化表面缺陷状态的量子隧穿势垒(QTB)层204和206、形成前发射极208的前面掺杂a-Si层、形成BSF层210的后面掺杂a-Si层、前透明导电氧化物(TCO)层212、后TCO层214、前金属栅格216和后金属栅格218。注意，还能够在太阳能电池的后面上具有发射极层且在前面上具有前表面场(FSF)层。并且，基极层202可包含外延生长结晶Si(c-Si)薄膜或者可以为c-Si晶片。可在发明人Jiunn Benjamin Heng、Chentao Yu、Zheng Xu和JianmingFu在2010年11月12日提交的名称为“Solar Cell with OxideTunneling Junctions”的美国专利No.8686283(律师案件No.SSP10-1002US)中找到关于双面隧穿结太阳能电池200的细节(包括制造方法)，在这里通过引用并入该申请所公开的全部内容。
一般地，在太阳能电池的表面上使用金属接触件，诸如金属栅格216和218，以收集由太阳能电池产生的电流。金属栅格一般包含两种类型的金属线：指线(finger)和母线(busbar)。指线是通常以基本上彼此相等的间距平行铺设以收集由太阳能电池产生的电流的细金属线。母线是与所有指线耦合以聚集所有收集电流并且有利于与外部引线(诸如金属片)耦合的较粗金属条带。注意，指线的布局图案不限于平行线。可以使用环、“蛇形”布局图案和其它的图案以减少金属栅格的剥离的机会。
在一些实施例中，金属栅格216和218可以以各种栅格图案被布置，包括但是不限于：具有双母线的常规栅格图案、单个中心母线栅格图案和单个边缘母线栅格图案。图3A给出示出具有双母线的示例性常规金属栅格图案的示图。图3B给出示出具有单个中心母线的示例性金属栅格图案的示图。图3C给出示出具有单个边缘母线的示例性金属栅格图案的示图。注意，在图3A～3C中，指线在任一端以环状图案形成，并在两者之间具有“蛇形”图案，以减少开放端或断点的数量。其它栅格图案也是可能的。在一个实施例中，在图3C所示的单个边缘母线配置中，太阳能电池的前表面和后表面上的母线位于相对的边缘上。
设计金属栅格的一个关键考虑是与较宽间隔栅格有关的增加的电阻损失与由表面的金属覆盖所导致的增加的反射和遮蔽效应之间的平衡。在大多数太阳能电池中，太阳能电池的面向太阳面上的金属栅格以优化光吸收的方式被设计。另一方面，背离太阳面上的金属栅格可出于最小化串联电阻的目的被优化。这些不同的优化考虑可导致前面和后面金属栅格具有不同的指线间距。在本发明的一些实施例中，在太阳能电池的后面上的指线间距比在太阳能电池的前面上的指线间距要更小。双面隧穿结太阳能电池的前结和后结的存在意味着这些太阳能电池是固有双面的。使用金属栅格(诸如图2所示的金属栅格218)作为后面电极能够有效地使更多的光被从这种太阳能电池的后面收集。具体而言，栅格线之间的间距使得光能够从其后面进入太阳能电池。当后面电极是金属栅格而不是常规的金属板电极时，即使太阳能电池被放在具有不透明后面盖子的太阳能面板中，也可以观察到光产生电流的增加。这是由于，穿过太阳能电池的光通过后面金属栅格被不透明(常常是白色的)后面盖子(也称为后板)反射回太阳能电池中。
除了设计前后金属栅格以优化双面太阳能电池的性能以外，还可调整前后TCO层的厚度以使光吸收最大化。例如，太阳能电池的前面一般接收直射太阳光(可被视为白光)；由此，希望设计前面TCO层以优化白光的吸收。前面TCO层具有约100～1200nm的厚度。在一个实施例中，前面TCO层为约700nm厚。太阳能电池的后面可主要接收具有更多的短波长成分的散射或扩散光。因此，希望设置后面TCO层以优化对于具有较短波长的光的吸收(即，对较长波长光具有较高透明度的TCO)。在一些实施例中，与前面TCO层相比，后面TCO层的厚度被降低，以优化短波长吸收。例如，后面TCO层可为400nm厚。注意，较薄的后面TCO层可导致电阻增加，这可以通过使用较窄的栅格线(gridline)间距来补偿。
双面太阳能面板
双面隧穿结太阳能电池由于其能够从后面吸收光而提供优异的性能。如果这些电池被放在双面面板(即具有透明或半透明后盖子的面板中)以允许散射光通过后盖子进入太阳能电池的后面，那么这种后面光吸收可产生更多的能量。与常规的单面面板相比，这种双面面板可导致性能增加2～12％。在多云或低照度的日子里，性能提高会更明显，原因是双面面板可更有效地收集扩散光。虽然简单地将常规的单面面板的不透明后板变为透明后板可提高面板的性能，但可以做更多以进一步提高双面面板的总体效率。
一种优化双面面板的性能的方式是尽可能地降低后面遮蔽(backside shading)。由于双面面板被设计为从两个面吸收光，因此，对于后面的一个或更多个电池的遮蔽或部分遮蔽可导致整个面板的电流输出减少。并且，由于后遮蔽电池会被非遮蔽电池施加反向偏压，因此串联连接的电池之间的不匹配的电流也会在面板上产生热斑。
为了使后面遮蔽最小化，在本发明的一个实施例中，常规上位于面板的后面上的接线盒被去除。图4给出示出常规的太阳能面板的后面的示图。在图4中，太阳能面板400包括一对端框架402和404、一对侧框架406和408、接线盒410和不透明后板420。框架402～408包围封装于前后盖子内的太阳能电池并且向其提供支撑。接线盒410提供太阳能面板400与其它太阳能面板之间的连接。另外，接线盒410可以包含有利于太阳能面板400的操作的其它电路部件(诸如旁路二极管)。但是，由于接线盒阻挡从面板的后面进入的光，因此该布置将导致双面面板的后面遮蔽。并且，连接不同面板的接线盒的布线也可导致后面遮蔽。
为了使后面遮蔽最小化，在一些实施例中，双面太阳能面板可具有安装于面板的边缘上或面板的后面上的较小轮廓的接线盒，该接线盒不对太阳能电池产生任何遮蔽，并且沿面板的边缘框架且在面板的边缘框架内部铺设用于面板间连接的布线。并且，常规的铝(Al)基框架常在太阳能面板的边缘处部分地覆盖电池的后面，或者可将阴影投射到电池的后面上。为了防止这种由Al框架(诸如图4所示的端部框架402和404、侧框架406和408)导致的后面遮蔽，双面面板可以是无框架的，其中前后盖子共同提供整个面板的物理支撑。在一个实施例中，使用夹具来安装不对太阳能电池产生任何遮蔽的无框架双面面板。在另一个实施例中，也可使用不向太阳能电池的前或后引入任何遮蔽和阴影的定制设计的框架来支撑双面面板。
图5给出示出根据本发明的实施例的示例性双面太阳能面板的后面的示图。在图5中，太阳能面板500包括夹在前面盖子与后面盖子之间的多个太阳能电池(诸如电池502、504、506和508)。注意，图5仅示出了后面盖子510。太阳能电池可包含双面隧穿结太阳能电池。在一些实施例中，后面盖子510由玻璃制成。
玻璃后面盖子不仅有利于来自电池的后面的光吸收，而且还确保充分地阻挡湿气。对于基于异质结太阳能电池的面板来说，湿气隔离是重要的，原因是大多数异质结太阳能电池包含一个或更多个TCO层，该一个或更多个TCO层用作抗反射涂层(ARC)和用于收集载流子的电极。许多TCO材料(诸如ZnO或Al:ZnO)具有湿气敏感性，并且在暴露于湿气时会损失其材料性能。例如，ZnO膜在长时间暴露于湿气时会变得粗糙或多孔。不同的材料(诸如氧化铟锡(ITO))虽然在暴露于湿气时遭受较小的劣化这个方面优于ZnO，但在暴露于热和湿气时其仍会遭受一定程度的劣化。多孔TCO膜允许湿气到达太阳能电池结，由此使太阳能电池性能急剧劣化。与在常规的单面太阳能面板中作为后面盖子(或后板)的聚氟乙烯(PVF)或聚对苯二甲酸乙二醇酯(PET)膜相比，玻璃后面盖子提供优异的湿气阻挡能力，从而显著提高双面面板的可靠性。为了防止湿气从玻璃盖边缘侵入，在一些实施例中，可沿双面面板的边缘施加诸如丁基(butyl)密封剂的耐湿密封剂。除了玻璃以外，还能够使用透明聚合物材料以制作提供轻重量双面面板的后面盖子510。
在图5所示的例子中，太阳能电池被串联连接。具体而言，使用金属片(诸如金属片512和514)将太阳能电池的各行串联连接成线串，这些金属片将太阳能电池502的后面连接到太阳能电池504的前面。这种金属片通常被焊接到太阳能电池的母线上。在图5所示的例子中，太阳能电池具有常规的双母线配置。在线串的端部，片线串联连接相邻的行的端部处的电池。例如，片线(tabbing wire)516串联连接面板500中的太阳能电池的第一行和第二行处的最右边的电池。如图5所示，串联连接在整个面板呈之字型(zigzag)，直到最后的太阳能电池(太阳能电池508)被连接。附加引线然后被附接到第一电池和最后电池(分别为电池502和508)的未连接片上，由此提供面板500的正输出和负输出。例如，引线522与施加到太阳能电池502的前面的金属片连接，并且，引线524与施加到太阳能电池508的后面的金属片连接。为了防止遮蔽(前面或后面)，引线522和524沿面板500的边缘被放置。在一些实施例中，使用塑料或橡胶护套来缠绕引线522和524，以提供电气绝缘。在图5中所示的例子中，引线522和524的端部置于太阳能面板500的左边缘的中间。也可以将这些端部置于太阳能面板500的左边缘的上下端，只要这种布置不导致遮蔽。在另一个实施例中，引线522和524沿着边缘被夹在前后玻璃盖子之间，并且通过钻过后玻璃盖子的孔离开以使得能够在不产生任何遮蔽的情况下在面板的后表面上安装接线盒。在又一个实施例中，引线522和524可沿着边缘被夹在前后玻璃盖子之间，并且通过玻璃盖子的边缘离开以使得能够在不产生任何遮蔽的情况下在面板边缘上安装接线盒。
并且，从图5可以看出，太阳能面板500不再具有框架。这种无框架设计防止由常规的Al基框架所导致的任何遮蔽，特别是对于面板的后面的遮蔽。为了支撑太阳能面板，可以在面板的边缘处(例如，区域532和534)(在这里没有电池)施加特别设计的夹具。除了使用夹具以支撑无框架太阳能面板以外，也可以在行、列或电池之间产生空的空间以插入支撑结构。在一些实施例中，可以使用被定制设计以防止太阳能电池的任何前遮蔽或后遮蔽的框架来支撑双面面板。
为了进一步增加光吸收，可以向诸如区域542和544的太阳能面板500上的无电池区域以及与母线重叠的区域施加光捕获膜(LCF)。向不被电池覆盖或者被不透明材料遮蔽的区域施加LCF在双面面板中是重要的。与具有不透明(常常为白色)后面盖子从而反射来自这些非覆盖区域的光的单面面板不同，双面面板具有透明后面盖子，这导致光穿过该非覆盖区域。通过向这些非覆盖区域和遮蔽区域施加LCF，可以收集更多的光。在一些实施例中，LCF具有调制的折射率，这些折射率导致希望的波长范围(例如，用于典型的太阳能电池的可见光范围)中的光在膜内被捕获、反射到一旁(reflected sideways)并且最终被太阳能电池捕获。在一些实施例中，LCF可包含厚度小于200μm的带纹理的聚合物膜。注意，聚合物膜的带纹理的表面可确保入射到这种表面的光被反射到一旁并且被太阳能电池捕获。
除了将LCF施加到太阳能面板上的非覆盖区域和遮蔽区域上以外，也可以将LCF施加到母线上以减少被金属层反射的光的量。具体而言，当光入射到被LCF覆盖的母线，与被向上反射(如裸金属母线的情况一样)不同的是，光将在膜内被捕获、被反射到一旁并且最终被太阳能电池捕获。在替代性实施例中，母线自身可包含带纹理的表面，使得入射到母线上的入射光将被反射到一旁以被太阳能电池捕获。换句话说，母线自身变为光捕获母线。可使用包括但不限于机械研磨、蚀刻和激光表面纹理化的各种方法来纹理化母线。表面纹理的形状可包括但不限于能够随机或规则分布于母线表面上的锥形、倒锥形、半圆等。注意，如果母线的表面带纹理，那么不再需要将LCF施加到母线上。
为了确保太阳能面板在诸如由下落碎片导致的遮蔽、多云或低辐射条件的非理想操作条件下的效率，太阳能面板500也可在电池或电池组级(level)上实现最大功率点跟踪(MPPT)技术和旁路保护。在一些实施例中，太阳能面板内的各太阳能电池或太阳能电池组与MPPT集成电路(IC)芯片和旁路二极管耦合。
为了进一步减少遮蔽，在前面或后面或者两个面上，可以将母线配置从双母线配置变为单母线配置或者甚至无母线配置。使用图3C所示的单边缘母线配置，所实现的太阳能面板具有降低的由母线引起的遮蔽以及降低的串联电阻。
图6A给出示出具有单边缘母线配置的串联连接太阳能电池的线串的断面图的示图。在图6A中，太阳能电池被夹在前盖子602与后盖子604之间。在一些实施例中，前盖子和后盖子均由玻璃制成。以太阳能电池的相同极性面面向相同方向的方式来铺设太阳能电池。例如，太阳能电池606和608均可使得它们的p型发射极面向前盖子602。为了使得能够实现串联连接，诸如金属片614的金属片耦合位于太阳能电池606的顶表面处的边缘母线610与位于太阳能电池608的底表面处的边缘母线612。
图6B给出示出具有单个边缘母线配置的串联连接的太阳能电池的线串的断面图的示图。在图6B中，以相邻太阳能电池的相同极性面面向相反方向的方式来铺设太阳能电池。例如，太阳能电池622可使其p型发射极面向前盖子，并且相邻的太阳能电池624可使其p型发射极面向后盖子。为了能够实现串联连接，诸如金属片630的金属片耦合位于太阳能电池622的顶表面处的边缘母线626和位于太阳能电池624的顶表面处的边缘母线628。
图6C给出示出具有单个边缘母线配置的串联连接的太阳能电池的线串的断面图的示图。在图6C中，以相邻的太阳能电池在边缘上部分地重叠而形成叠瓦状图案的方式来布置太阳能电池。例如，太阳能电池660以太阳能电池660的顶部边缘母线664直接接触太阳能电池662的底部边缘母线666的方式与太阳能电池662部分重叠，由此使得能够实现电池660与662之间的串联连接。从图6A～6C可以看出，与常规的双母线相比，单个边缘母线产生更少的遮蔽，并且，连接电池的宽金属片或母线的直接接触可导致串联电阻减小。
在发明人Jiunn Benjamin Heng、Jianming Fu、Zheng Xu和Bobby Yang在2014年10月8日提交的发明名称为“ModuleFabrication of Solar Cells with Low Resistivity Electrodes”的美国专利申请No.14/510,008(律师案件No.SSP13-1001CIP)中，可找到关于具有单个边缘母线配置的太阳能电池的细节(包括制造方法)，在这里通过引用并入该申请所公开的全部内容。
在图5中，所有电池被串联连接，意味着所有太阳能电池的内部电阻的合计为面板电阻。面板的较大的内部电阻导致光生电力的较大部分被面板的内部电阻消耗而较少的电力被面板输出。由面板的内部电阻导致的这种电力缺陷对于双面面板来说会更严重，原因是，光生电流通常在双面面板中比在单面面板中更高，并且，由内部电阻消耗的电力与电流的平方成比例。一种增加面板输出电力的方式是减小面板电阻。在一些实施例中，作为使得双面面板中的所有电池串联连接的替代，双面面板可包含太阳能电池的并联耦合线串。具体而言，一个或更多个行的电池可被串联连接以形成电池的线串(或组)，并且，多个线串(组)可相互并联连接。图7给出示出根据本发明的实施例的示例性双面太阳能面板的后面的示图。
在图7中，太阳能面板700包括夹在前面盖子(未示出)和后面盖子(710)之间的多个太阳能电池线串(诸如线串702、704和706)。各线串包含多个串联连接的太阳能电池。在图7所示的例子中，各线串包含通过金属片串联在一起从而形成“U”的两行太阳能电池，并且，太阳能面板700包含三个这种U形线串。从图7可以看出，U形线串的输出(包含正输出和负输出)位于太阳能面板700的同一边缘上，从而使得能够在这种边缘处建立线串之间的并联连接，而并不遮蔽太阳能面板的前面或后面。
并且，与图5所示的例子类似，在太阳能面板700上的诸如区域712和714的没有被太阳能电池覆盖的面板空间处施加光捕获膜(LCF)。在一些实施例中，LCF也可被施加到母线上以减少被金属层反射的光的量。
利用位于面板700的同一边缘上的电池的各线串的输出，可以在边缘上进行各种连接。将三个线串的所有正输出耦合在一起并将线串的所有负输出耦合在一起导致三个线串被并联连接。另一方面，将线串702的负输出连接到线串704的正输出并然后将线串704的负输出连接到线串706的正输出可导致三个线串被串联连接。其它的配置也是可能的。注意，用于线串间连接的电气电缆可被排列(align)并且附接到太阳能面板700的边缘上，且并不遮蔽太阳能面板的前面或后面。
如上面讨论的那样，并联连接的太阳能电池线串能够导致降低的面板电阻。但是，并联连接也可导致输出电压减小，而使得面板与具有串联连接电池的常规面板不兼容。为了确保兼容，在一些实施例中，标准尺寸的太阳能电池分别被分成多个较小电池，这些较小电池然后被串联连接。如果面板中的并联线串的数量与电池分割因子相同，那么具有并联线串的太阳能面板的输出电压和电流可与具有串联连接电池的常规面板的输出电压和电流相似(但稍高)。例如，在图7中，三个U形线串可被并联连接；由此，为了确保面板的输出电压至少与具有相同尺寸的常规面板的输出电压一样高，标准尺寸的太阳能电池中的每一个需要被分成三个较小电池。在发明人Bobby Yang、PeterNguyen、Jiunn Benjamin Heng、Anand J.Redd和Zheng Xu在2014年11月4日提交的发明名称为“High Efficiency Solar Panel”的美国临时专利申请No.62/075,134(律师案件No.SCTY-P67-2P)中，可找到关于电池分割和电池分割过程的分析的详细描述，在这里通过引用并入其公开的全部内容。
图8给出示出根据本发明的实施例的示例性双面太阳能面板的后面的示图。在图8中，太阳能面板800包括夹在前面盖子(未示出)和后面盖子810之间的多个太阳能电池线串(诸如线串802、804和806)。各线串包含多个串联连接的较小的太阳能电池。注意，术语“较小电池”指的是通过将标准尺寸太阳能电池(诸如标准5英寸或6英寸太阳能电池)分割成多个较小尺寸的电池而获得的太阳能电池。在大多数情况下，标准尺寸的电池被均匀分割成多个较小电池。例如，6英寸×6英寸正方形或伪正方形形状的电池可被分成三个2英寸×6英寸的较小电池。其它的电池尺寸、形状和分割方案也是可能的。
在图8所示的例子中，各线串包含相互串联耦合以形成“U”的两行较小电池，并且，太阳能面板800包含三个这种U形线串。具体而言，较小电池上的母线具有单个边缘母线配置，并且，各行中的相邻的较小电池通过在相应的边缘处部分相互重叠而被串联连接。例如，最顶部的行中的较小电池以如下方式耦合：电池的右上边缘母线(当从面板800的后面观看时)直接接触右边相邻的电池的左下边缘母线。换句话说，当从后面观看时，较小电池被以如下方式布置：右侧电池部分地处于相邻的左侧电池的顶部上。另一方面，这种图案在相邻的串联连接的行上颠倒，以具有部分地在相邻的右侧电池的顶部上的左侧电池。
与图7所示的面板700类似，太阳能面板800包含三个U形线串，不同的是太阳能面板800中各线串包含叠瓦状(shingled)的较小电池。三个U形线串在太阳能面板800的左边缘处被并联连接。具体而言，通过使用电缆或金属片812以耦合线串的所有正输出以及使用不同的电缆或金属片814以耦合线串的所有负输出，来执行并联连接。电缆812和814沿太阳能面板800的边缘被排列(align)，且它们的引线位于边缘的相对端处以用于连接到其它的面板。注意，这种布线布置确保面板的前面或后面没有遮蔽。在一个实施例中，电缆812和814可被路由到面板的后面上的接线盒(该接线盒不遮蔽任何太阳能电池)或者被路由到面板的边缘上的接线盒。在一些实施例中，也可在面板边缘处嵌入其它的电路部件(诸如MPPT器件和旁路二极管)。
注意，在图8所示的例子中，叠瓦状的较小电池覆盖面板面积的大部分，从而在电池之间不留下空间。并且，在任一面上不再有可见的母线。由此，除了在不被较小电池覆盖的面板的边缘处以及叠瓦状电池的线串之间的空间处以外，不再需要LCF。
图9给出示出根据本发明的实施例的双面太阳能面板的制造过程的流程图。在制造过程中，首先，通过使用常规的标准尺寸Si晶片制造用于双面异质结太阳能电池的多层半导体结构(操作902)。在一些实施例中，通过使用诸如标准5英寸或6英寸平方的标准尺寸的Si晶片制造双面异质结半导体结构。在一些实施例中，太阳能电池也可包含与基极层和前后TCO层相邻的前面和/或后面QTB层。为了确保来自两个面的最佳光吸收，在一些实施例中，前面和后面TCO层具有不同的厚度并且/或者由不同的材料制成。具体而言，前面TCO层对于白光的吸收被优化，而后面TCO层对于具有较短波长的散射或扩散光的吸收被优化。
随后，分别在太阳能电池的前后表面上沉积前面和后面金属栅格，以完成双面太阳能电池制造(操作904)。在一些实施例中，沉积前面和后面金属栅格可包含电镀Cu栅格，该Cu栅格随后被Ag或Sn涂敷。在其它的实施例中，可通过使用物理气相沉积(PVD)技术将诸如Cu或Ni籽(seed)层的一个或更多个金属籽层沉积到多层结构上，以提高电镀Cu层的粘接和欧姆接触质量。可以形成不同类型的金属栅格，这些金属栅格包括但不限于：在中心处具有单个母线的金属栅格和在电池边缘处具有单个母线的金属栅格。注意，对于边缘母线配置，太阳能电池的前后表面处的母线位于相对的边缘上。在一些实施例中，前面和后面金属栅格中的指线具有不同的间距。具体而言，前面(接收直射光的面)上的指线的间距针对光吸收被优化，而后面(主要接收散射光的面)上的指线的间距针对较低串联电阻被优化。在其它的实施例中，太阳能电池的前面上的指线间距比太阳能电池的后面上的指线间距更宽。在一些实施例中，金属栅格包含母线，并且，向母线施加光捕获膜(LCF)。在一些实施例中，金属栅格包含母线，并且，形成母线包含使母线的表面纹理化。可以使用各种方法以使母线的表面纹理化，包括但不限于：机械研磨、蚀刻和激光表面纹理化。表面纹理的形状可包含但不限于随机或规则分布于母线表面上的锥形、倒锥形、半圆等。金属母线上的LCF或带纹理表面确保入射到母线上的光不被向上反射，而是，光将在LCF或带纹理的金属表面内被捕获、反射到一旁并且最终被太阳能电池捕获。
在沉积前后金属栅格之后，在一些实施例中，各太阳能电池被分割成多个较小电池(操作906)。可以使用各种技术来分割电池。在一些实施例中，使用基于激光的刻划(scribe)和割开(cleave)技术。注意，为了防止对于发射极结的损伤，希望在与表面场层对应的太阳能电池表面处施加激光刻划。例如，如果发射极结处于太阳能电池的前表面上，那么激光刻划应被施加到太阳能电池的后表面上。并且注意，只有太阳能面板具有并联连接的电池组的时候，才需要将太阳能电池分割成较小电池。一般地，如果所有电池被串联连接，那么不需要将电池分割成较小电池。优选具有重叠(叠瓦状)布局配置的分割的较小电池，原因是它提供多个附加优点，包括：没有未利用空间的紧凑电池面积；在前面和后面上没有导致遮蔽的母线；以及降低的串联电阻。
在形成较小电池之后，多个较小电池被串联连接在一起以形成线串(操作908)。在一些实施例中，两行较小电池被串联连接以形成U形线串。注意，根据母线配置，可能需要修改常规的线串处理。在一些实施例中，通过在边缘处相互重叠以形成叠瓦状图案来串联连接较小电池的行，以形成单个图案。注意，这种叠瓦状配置提供多种优点，包括：在面板的前面和后面上没有露出的母线，由此减少遮蔽或者消除对于LCF的需要；降低的串联电阻且不需要使用条带；没有不必要的空白空间的更紧凑的布局。
在形成较小电池的多个线串之后，相互挨着铺设多个线串，以形成面板(操作910)。在一些实施例中，相互挨着铺设三个U形线串，以形成包含6行较小电池的面板。在铺设线串之后，施加前面盖子(操作912)。在一些实施例中，前面盖子由玻璃制成。
对于实现电池级MPPT或电池级旁路保护的太阳能模块，可在合适的位置(包括但不限于：太阳能电池之间的角部间隔(如果存在的话)和相邻的太阳能电池之间的位置处)放置MPPT IC芯片和旁路二极管(操作914)。在一些实施例中，可在多电池级或线串级上实现MPPT IC芯片和旁路二极管。在一些实施例中，各行较小电池可耦合到位于面板边缘处的MPPT IC和/或旁路二极管。
U形线串然后通过经修改的片处理来相互连接(操作916)。具体而言，线串互相并联连接，其中线串的正电极耦合在一起以形成面板的正输出且线串的负电极耦合在一起以形成面板的负输出。在一些实施例中，被绝缘护套包裹的金属电缆位于面板边缘处以连接至各U形线串的相应的正输出和负输出。形成MPPT IC芯片和旁路二极管和相应的较小电池电极之间的电气连接，以实现完全互连的太阳能面板(操作918)。注意，连接电缆以如下方式被放置：确保太阳能面板的前面和后面没有遮蔽。随后，在面板的不被电池覆盖的空间处施加LCF(操作920)，并且施加后面盖子(操作922)。在一些实施例中，后面盖子也由玻璃制成。在一些实施例中，后面盖子由透明聚合物制成，这可降低面板的重量。然后，整个太阳能面板可进行正常的层压处理，该层压处理将电池、MPPT IC和旁路二极管密封于适当的位置(操作924)。注意，与制作常规的单面面板的处理相比，不再需要框架处理和接线盒附接，原因是该新型的双面面板不具有框架；也不具有接线盒。可在层压过程中完成整个面板的布线，包括电池之间的布线和到MPPT/旁路二极管的布线。
仅出于解释和描述的目的给出了各种实施例的以上描述。它们不旨是详尽的或者要将本发明限于所公开的形式。因此，对于本领域技术人员来说，许多修改和变体将是明显的。另外，以上的公开不旨在限制本发明。

Claims (24)

1.一种双面太阳能面板，包括：
所述太阳能面板的第一面上的第一透明盖子；
所述太阳能面板的第二面上的第二透明盖子；
夹在所述第一盖子与所述第二盖子之间的多个太阳能电池；和
用于输出由所述太阳能面板产生的电力的一个或更多个引线，其中，所述引线位于所述太阳能面板的边缘上，且不遮蔽所述太阳能面板的所述第一面和所述第二面，并且，
其中各太阳能电池包含：
光伏结构；
所述光伏结构的第一面上的第一金属栅格，由此允许所述太阳能电池从所述光伏结构的所述第一面吸收光；和
所述光伏结构的第二面上的第二金属栅格，由此允许所述太阳能电池从所述光伏结构的所述第二面吸收光。
2.根据权利要求1的太阳能面板，其中，所述太阳能电池是双面异质结太阳能电池，其包含：
位于所述光伏结构的所述第一面上的第一透明导电氧化物层；和
位于所述光伏结构的所述第二面上的第二透明导电氧化物层。
3.根据权利要求2的太阳能面板，其中所述第一透明导电氧化物层和所述第二透明导电氧化物层具有不同的厚度，并且其中所述第一透明导电氧化物层的厚度被配置为用于通过所述光伏结构吸收大致白光，并且其中所述第二透明导电氧化物层的厚度被配置为用于通过所述光伏结构吸收大致散射或扩散光。
4.根据权利要求1的太阳能面板，其中所述第一金属栅格和所述第二金属栅格具有不同的指线间距。
5.根据权利要求1的太阳能面板，其中所述第一金属栅格包含位于所述太阳能电池的所述第一面的边缘处的第一边缘母线，并且其中所述第二金属栅格包含位于所述太阳能电池的所述第二面的相对边缘处的第二边缘母线。
6.根据权利要求5的太阳能面板，其中两个相邻太阳能电池以如下方式布置：一个太阳能电池的第一面上的第一边缘母线直接接触另一个太阳能电池的第二面上的第二边缘母线，由此有利于所述两个相邻太阳能电池之间的串联连接。
7.根据权利要求1的太阳能面板，其中所述第一金属栅格和所述第二金属栅格的母线被光捕获膜覆盖。
8.根据权利要求1的太阳能面板，其中所述第一金属栅格和所述第二金属栅格的母线的表面有纹理。
9.根据权利要求1的太阳能面板，其中所述第二盖子上的不被所述太阳能电池覆盖的区域被光捕获膜覆盖。
10.根据权利要求1的太阳能面板，其中所述太阳能面板是无框架的。
11.根据权利要求1的太阳能面板，其中所述太阳能面板还包含多个最大功率点跟踪器件，其中各最大功率点跟踪器件与各太阳能电池或太阳能电池组耦合。
12.根据权利要求1的太阳能面板，其中所述第一盖子包含玻璃，并且其中所述第二盖子包含玻璃或聚合物。
13.一种双面太阳能电池的制造方法，包括：
获得多个太阳能电池；
在所述太阳能电池的第一面上施加第一透明盖子；
在所述太阳能电池的第二面上施加第二透明盖子；以及
将一个或更多个引线附接到所述太阳能面板的边缘，由此在不遮蔽所述太阳能面板的所述第一面和所述第二面的情况下形成所述太阳能面板的输出，
其中获得各太阳能电池包含：
形成光伏结构；
在所述光伏结构的第一面上形成第一金属栅格，由此允许所述太阳能电池吸收来自所述第一面的光；和
在所述光伏结构的第二面上形成第二金属栅格，由此允许所述太阳能电池吸收来自所述第二面的光。
14.根据权利要求13的方法，其中所述太阳能电池是双面异质结太阳能电池，其包括：
位于所述光伏结构的所述第一面上的第一透明导电氧化物层；和
位于所述光伏结构的所述第二面上的第二透明导电氧化物层。
15.根据权利要求14的方法，其中所述第一透明导电氧化物层和所述第二透明导电氧化物层具有不同的厚度，并且其中所述第一透明导电氧化物层的厚度被配置为用于通过所述光伏结构吸收大致白光，并且其中所述第二透明导电氧化物层的厚度被配置为用于通过所述光伏结构吸收大致散射或扩散光。
16.根据权利要求14的方法，其中所述第一金属栅格和所述第二金属栅格具有不同的指线间距。
17.根据权利要求14的方法，其中所述第一金属栅格包含位于所述太阳能电池的所述第一面上的边缘处的第一边缘母线，并且其中所述第二金属栅格包含位于所述太阳能电池的所述第二面上的相对边缘处的第二边缘母线。
18.根据权利要求17的方法，还包括以如下方式来布置两个相邻太阳能电池：一个太阳能电池的第一面上的第一边缘母线直接接触另一个太阳能电池的第二面上的第二边缘母线，由此有利于所述两个相邻太阳能电池之间的串联连接。
19.根据权利要求13的方法，还包括用光捕获膜覆盖所述第一金属栅格和所述第二金属栅格的母线。
20.根据权利要求13的方法，还包括纹理化所述第一金属栅格和所述第二金属栅格的母线的表面。
21.根据权利要求13的方法，还包括向所述第二盖子上的不被所述太阳能电池覆盖的区域施加光捕获膜。
22.根据权利要求13的方法，还包括在所述第一盖子和所述第二盖子之间放置多个最大功率点跟踪器件，其中各最大功率点跟踪器件与各太阳能电池或太阳能电池组耦合。
23.根据权利要求13的方法，其中所述第一盖子包含玻璃，并且其中所述第二盖子包含玻璃和透明聚合物中的一种。
24.一种双面太阳能电池，包括：
双异质结光伏结构；
所述光伏结构的第一面上的第一金属栅格，由此允许所述太阳能电池从所述第一面吸收光；和
所述光伏结构的第二面上的第二金属栅格，由此允许所述太阳能电池从所述第二面吸收光。
CN201510166887.6A 2015-02-02 2015-04-10 使用异质结太阳能电池的双面光伏模块 Active CN106159020B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/611,988 2015-02-02
US14/611,988 US9947822B2 (en) 2015-02-02 2015-02-02 Bifacial photovoltaic module using heterojunction solar cells

Publications (2)

Publication Number Publication Date
CN106159020A true CN106159020A (zh) 2016-11-23
CN106159020B CN106159020B (zh) 2018-04-03

Family

ID=54977834

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201520213153.4U Active CN204928739U (zh) 2015-02-02 2015-04-10 双面太阳能面板和双面太阳能电池
CN201510166887.6A Active CN106159020B (zh) 2015-02-02 2015-04-10 使用异质结太阳能电池的双面光伏模块

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201520213153.4U Active CN204928739U (zh) 2015-02-02 2015-04-10 双面太阳能面板和双面太阳能电池

Country Status (5)

Country Link
US (1) US9947822B2 (zh)
EP (1) EP3254314A1 (zh)
CN (2) CN204928739U (zh)
MX (1) MX2017009942A (zh)
WO (1) WO2016126416A1 (zh)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD896747S1 (en) * 2014-10-15 2020-09-22 Sunpower Corporation Solar panel
US10453983B2 (en) * 2015-12-18 2019-10-22 Lg Electronics Inc. Solar cell and method of manufacturing
CN105489688A (zh) * 2016-01-04 2016-04-13 协鑫集成科技股份有限公司 太阳能电池组件及其制备方法
KR101821394B1 (ko) * 2016-01-14 2018-01-23 엘지전자 주식회사 태양전지
US20190140115A1 (en) 2016-05-06 2019-05-09 Rensselaer Polytechnic Institute High absorption photovoltaic material and methods of making the same
JPWO2017195289A1 (ja) * 2016-05-11 2018-09-20 三菱電機株式会社 太陽光発電装置、太陽電池パドルおよび宇宙構造物
US10937915B2 (en) 2016-10-28 2021-03-02 Tesla, Inc. Obscuring, color matching, and camouflaging solar panels
JP6526157B2 (ja) * 2016-11-17 2019-06-05 エルジー エレクトロニクス インコーポレイティド 太陽電池パネル
US10666187B2 (en) * 2016-12-09 2020-05-26 Key Solar Solutions Llc Less than maximum effective solar design
CN110416327A (zh) * 2017-03-09 2019-11-05 伟创力有限公司 叠瓦式阵列太阳能电池及制造包括叠瓦式阵列太阳能电池的太阳能组件的方法
US10381973B2 (en) 2017-05-17 2019-08-13 Tesla, Inc. Uniformly and directionally colored photovoltaic modules
US10985688B2 (en) 2017-06-05 2021-04-20 Tesla, Inc. Sidelap interconnect for photovoltaic roofing modules
US10734938B2 (en) 2017-07-21 2020-08-04 Tesla, Inc. Packaging for solar roof tiles
US10857764B2 (en) 2017-07-25 2020-12-08 Tesla, Inc. Method for improving adhesion between glass cover and encapsulant for solar roof tiles
US20190051776A1 (en) * 2017-08-09 2019-02-14 Electronics And Telecommunications Research Institute Bi-facial transparent solar cell
US10978990B2 (en) 2017-09-28 2021-04-13 Tesla, Inc. Glass cover with optical-filtering coating for managing color of a solar roof tile
CN107958942A (zh) * 2017-11-30 2018-04-24 晶澳（扬州）太阳能科技有限公司 一种使用单面太阳能电池的双面光伏发电装置
US10454409B2 (en) 2018-02-02 2019-10-22 Tesla, Inc. Non-flat solar roof tiles
US10862420B2 (en) 2018-02-20 2020-12-08 Tesla, Inc. Inter-tile support for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
CA3055609A1 (en) 2018-03-01 2019-09-06 Tesla, Inc. System and method for packaging photovoltaic roof tiles
EP3550616A1 (en) * 2018-04-04 2019-10-09 Badini, Angelo Effective power booster panel for photovoltaic plants
KR20200134328A (ko) * 2018-04-14 2020-12-01 솔라리아 코포레이션 양면 광전지 모듈
CN110634967B (zh) * 2018-06-21 2021-08-10 德运创鑫(北京)科技有限公司 一种异质结电池的正面电极及其制造方法
US11431279B2 (en) 2018-07-02 2022-08-30 Tesla, Inc. Solar roof tile with a uniform appearance
US11245354B2 (en) 2018-07-31 2022-02-08 Tesla, Inc. Solar roof tile spacer with embedded circuitry
US11082005B2 (en) 2018-07-31 2021-08-03 Tesla, Inc. External electrical contact for solar roof tiles
US11245355B2 (en) 2018-09-04 2022-02-08 Tesla, Inc. Solar roof tile module
US11581843B2 (en) 2018-09-14 2023-02-14 Tesla, Inc. Solar roof tile free of back encapsulant layer
JP7471273B2 (ja) * 2019-03-20 2024-04-19 株式会社カネカ 太陽電池モジュール及び太陽電池モジュールの製造方法
US11431280B2 (en) 2019-08-06 2022-08-30 Tesla, Inc. System and method for improving color appearance of solar roofs
AU2020385118A1 (en) * 2019-11-12 2022-06-02 Solarca Llc Bifacial photovoltaic module
JP1684268S (zh) * 2020-01-10 2021-04-26
CN112201701B (zh) * 2020-09-30 2024-05-03 浙江晶科能源有限公司 太阳能电池和光伏组件
CN112713200A (zh) * 2020-12-29 2021-04-27 晋能清洁能源科技股份公司 一种优化型异质结太阳能电池及其制备方法
US11764727B2 (en) * 2021-01-21 2023-09-19 Xponent Power, Inc. Photovoltaic panel design to enable low voltage and high output power in an energy generating photovoltaic system
CN114420771B (zh) * 2021-12-29 2024-02-13 中国华能集团清洁能源技术研究院有限公司 异质结光伏组件和异质结光伏组件的制造方法
DE102022128223A1 (de) * 2022-10-25 2024-04-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Solarzellenmodul und Verfahren zur Herstellung eines Solarzellenmoduls

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060260673A1 (en) * 2003-10-17 2006-11-23 Canon Kabushiki Kaisha Photovoltaic element and method of producing photovoltaic element
CN101233620A (zh) * 2005-07-28 2008-07-30 通用电气公司 组成渐变光伏装置及其制备方法与相关制品技术
CN102088040A (zh) * 2010-12-09 2011-06-08 泰通(泰州)工业有限公司 双面电池组件
CN201928739U (zh) * 2010-11-19 2011-08-17 天津滨海国际花卉科技园区股份有限公司 温室作物的肥料及淡水喷淋系统
CN202009023U (zh) * 2011-04-06 2011-10-12 中节能太阳能科技（镇江）有限公司 一种无边框的太阳能电池组件
CN102403386A (zh) * 2010-09-10 2012-04-04 南通美能得太阳能电力科技有限公司 一种双面太阳能电池组件及其制作方法
CN202423340U (zh) * 2012-01-20 2012-09-05 英利集团有限公司 一种n型太阳能双面发电组件
WO2014066265A1 (en) * 2012-10-25 2014-05-01 Sunpower Corporation Bifacial solar cell module with backside reflector
US20140196768A1 (en) * 2013-01-11 2014-07-17 Silevo, Inc. Module fabrication of solar cells with low resistivity electrodes
CN104205347A (zh) * 2012-02-15 2014-12-10 奥塔装置公司 包含搭叠光伏瓦片的光伏模块及其制造工艺

Family Cites Families (382)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US819360A (en) 1905-03-22 1906-05-01 Edward Newton A Electrical switch.
US2626907A (en) 1951-05-14 1953-01-27 Petrolite Corp Process for breaking petroleum emulsions
US2938938A (en) 1956-07-03 1960-05-31 Hoffman Electronics Corp Photo-voltaic semiconductor apparatus or the like
US3116171A (en) 1961-03-14 1963-12-31 Bell Telephone Labor Inc Satellite solar cell assembly
US3094439A (en) 1961-07-24 1963-06-18 Spectrolab Solar cell system
US3459597A (en) 1966-02-04 1969-08-05 Trw Inc Solar cells with flexible overlapping bifurcated connector
US3969163A (en) 1974-09-19 1976-07-13 Texas Instruments Incorporated Vapor deposition method of forming low cost semiconductor solar cells including reconstitution of the reacted gases
JPS5758075B2 (zh) 1974-10-19 1982-12-08 Sony Corp
US3961997A (en) 1975-05-12 1976-06-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fabrication of polycrystalline solar cells on low-cost substrates
US4082568A (en) 1977-05-10 1978-04-04 Joseph Lindmayer Solar cell with multiple-metal contacts
US4124410A (en) 1977-11-21 1978-11-07 Union Carbide Corporation Silicon solar cells with low-cost substrates
US4193975A (en) 1977-11-21 1980-03-18 Union Carbide Corporation Process for the production of improved refined metallurgical silicon
US4342044A (en) 1978-03-08 1982-07-27 Energy Conversion Devices, Inc. Method for optimizing photoresponsive amorphous alloys and devices
US4200621A (en) 1978-07-18 1980-04-29 Motorola, Inc. Sequential purification and crystal growth
US4284490A (en) 1978-09-28 1981-08-18 Coulter Systems Corporation R.F. Sputtering apparatus including multi-network power supply
US4213798A (en) 1979-04-27 1980-07-22 Rca Corporation Tellurium schottky barrier contact for amorphous silicon solar cells
US4251285A (en) 1979-08-14 1981-02-17 Westinghouse Electric Corp. Diffusion of dopant from optical coating and single step formation of PN junction in silicon solar cell and coating thereon
DE2944185A1 (de) 1979-11-02 1981-05-07 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Solarzelle
US4315096A (en) 1980-07-25 1982-02-09 Eastman Kodak Company Integrated array of photovoltaic cells having minimized shorting losses
JPS5789269A (en) 1980-09-26 1982-06-03 Licentia Gmbh Solar battery unit
DE3280293D1 (de) 1981-11-04 1991-02-21 Kanegafuchi Chemical Ind Biegsame photovoltaische einrichtung.
US4571448A (en) 1981-11-16 1986-02-18 University Of Delaware Thin film photovoltaic solar cell and method of making the same
US4657060A (en) 1982-03-01 1987-04-14 Graber Industries, Inc. Vertical venetian blind with inline drive
US4431858A (en) 1982-05-12 1984-02-14 University Of Florida Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby
DE3308269A1 (de) 1983-03-09 1984-09-13 Licentia Patent-Verwaltungs-Gmbh Solarzelle
US4586988A (en) 1983-08-19 1986-05-06 Energy Conversion Devices, Inc. Method of forming an electrically conductive member
US4589191A (en) 1983-10-20 1986-05-20 Unisearch Limited Manufacture of high efficiency solar cells
US4514579A (en) 1984-01-30 1985-04-30 Energy Conversion Devices, Inc. Large area photovoltaic cell and method for producing same
DE3419137A1 (de) 1984-05-23 1985-11-28 Bayer Ag, 5090 Leverkusen Verfahren und vorrichtung zur herstellung von halbleiterfolien
US4567642A (en) 1984-09-28 1986-02-04 The Standard Oil Company Method of making photovoltaic modules
US4577051A (en) 1984-09-28 1986-03-18 The Standard Oil Company Bypass diode assembly for photovoltaic modules
US4633033A (en) 1985-02-08 1986-12-30 Energy Conversion Devices, Inc. Photovoltaic device and method
US4617421A (en) 1985-04-01 1986-10-14 Sovonics Solar Systems Photovoltaic cell having increased active area and method for producing same
US4667060A (en) 1985-05-28 1987-05-19 Spire Corporation Back junction photovoltaic solar cell
US4652693A (en) 1985-08-30 1987-03-24 The Standard Oil Company Reformed front contact current collector grid and cell interconnect for a photovoltaic cell module
US4753683A (en) 1985-09-09 1988-06-28 Hughes Aircraft Company Gallium arsenide solar cell system
FR2597662B1 (fr) 1986-04-22 1988-06-17 Thomson Csf Photodiode pin realisee a partir de semi-conducteur amorphe
US4694115A (en) 1986-11-04 1987-09-15 Spectrolab, Inc. Solar cell having improved front surface metallization
DE3708548A1 (de) 1987-03-17 1988-09-29 Telefunken Electronic Gmbh Solarzellenmodul mit parallel und seriell angeordneten solarzellen
US4771017A (en) 1987-06-23 1988-09-13 Spire Corporation Patterning process
US5057163A (en) 1988-05-04 1991-10-15 Astropower, Inc. Deposited-silicon film solar cell
US5698451A (en) 1988-06-10 1997-12-16 Mobil Solar Energy Corporation Method of fabricating contacts for solar cells
US5075763A (en) 1988-09-28 1991-12-24 Kopin Corporation High temperature metallization system for contacting semiconductor materials
JPH06105691B2 (ja) 1988-09-29 1994-12-21 株式会社富士電機総合研究所 炭素添加非晶質シリコン薄膜の製造方法
US4933061A (en) 1988-12-29 1990-06-12 Trifari, Krussman & Fishel, Inc. Electroplating tank
DE3901042A1 (de) 1989-01-14 1990-07-26 Nukem Gmbh Verfahren und vorrichtung zur herstellung eines halbleiter-schichtsystems
US5118361A (en) 1990-05-21 1992-06-02 The Boeing Company Terrestrial concentrator solar cell module
US5217539A (en) 1991-09-05 1993-06-08 The Boeing Company III-V solar cells and doping processes
US5091018A (en) 1989-04-17 1992-02-25 The Boeing Company Tandem photovoltaic solar cell with III-V diffused junction booster cell
JPH036867A (ja) 1989-06-05 1991-01-14 Mitsubishi Electric Corp 光発電素子の電極構造、形成方法、及びその製造装置
DE4009336A1 (de) 1990-03-23 1991-09-26 Telefunken Systemtechnik Solarzelle
KR100194892B1 (ko) 1990-05-18 1999-06-15 윌슨 더그 화학 증착 방법
DK170189B1 (da) 1990-05-30 1995-06-06 Yakov Safir Fremgangsmåde til fremstilling af halvlederkomponenter, samt solcelle fremstillet deraf
US5213628A (en) 1990-09-20 1993-05-25 Sanyo Electric Co., Ltd. Photovoltaic device
DE4030713A1 (de) 1990-09-28 1992-04-02 Telefunken Systemtechnik Photovoltaischer solargenerator
US5364518A (en) 1991-05-28 1994-11-15 Leybold Aktiengesellschaft Magnetron cathode for a rotating target
CA2087707A1 (en) 1991-06-11 1992-12-12 Fritz Wald Solar cell and method of making same
US5178685A (en) 1991-06-11 1993-01-12 Mobil Solar Energy Corporation Method for forming solar cell contacts and interconnecting solar cells
US5181968A (en) 1991-06-24 1993-01-26 United Solar Systems Corporation Photovoltaic device having an improved collector grid
US5455430A (en) 1991-08-01 1995-10-03 Sanyo Electric Co., Ltd. Photovoltaic device having a semiconductor grade silicon layer formed on a metallurgical grade substrate
US5705828A (en) 1991-08-10 1998-01-06 Sanyo Electric Co., Ltd. Photovoltaic device
US5286306A (en) 1992-02-07 1994-02-15 Shalini Menezes Thin film photovoltaic cells from I-III-VI-VII compounds
US5808315A (en) 1992-07-21 1998-09-15 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having transparent conductive film
JPH0794431A (ja) 1993-04-23 1995-04-07 Canon Inc アモルファス半導体用基板、該基板を有するアモルファス半導体基板、及び該アモルファス半導体基板の製造方法
US5401331A (en) 1993-09-07 1995-03-28 Midwest Research Institute Substrate for thin silicon solar cells
DE4333407C1 (de) 1993-09-30 1994-11-17 Siemens Ag Solarzelle mit einer Chalkopyritabsorberschicht
JPH07326664A (ja) 1994-05-31 1995-12-12 Fuji Electric Co Ltd ウエハの誘電体分離溝の充填方法
FR2722612B1 (fr) 1994-07-13 1997-01-03 Centre Nat Rech Scient Procede de fabrication d'un materiau ou dispositif photovoltaique, materiau ou dispositif ainsi obteu et photopile comprenant un tel materiau ou dispositif
JP2992464B2 (ja) 1994-11-04 1999-12-20 キヤノン株式会社 集電電極用被覆ワイヤ、該集電電極用被覆ワイヤを用いた光起電力素子及びその製造方法
US5627081A (en) 1994-11-29 1997-05-06 Midwest Research Institute Method for processing silicon solar cells
EP0729189A1 (en) 1995-02-21 1996-08-28 Interuniversitair Micro-Elektronica Centrum Vzw Method of preparing solar cells and products obtained thereof
JPH10509773A (ja) 1995-04-25 1998-09-22 ザ ビーオーシー グループ インコーポレイテッド 基板上に誘電体層を形成するためのスパッタリング装置及び方法
JP3459947B2 (ja) 1996-06-18 2003-10-27 シャープ株式会社 太陽電池の製造方法
US6552414B1 (en) 1996-12-24 2003-04-22 Imec Vzw Semiconductor device with selectively diffused regions
JPH1131834A (ja) * 1997-07-10 1999-02-02 Showa Shell Sekiyu Kk ガラスサンドイッチ型太陽電池パネル
US6091019A (en) 1997-09-26 2000-07-18 Sanyo Electric Co., Ltd. Photovoltaic element and manufacturing method thereof
US6140570A (en) 1997-10-29 2000-10-31 Canon Kabushiki Kaisha Photovoltaic element having a back side transparent and electrically conductive layer with a light incident side surface region having a specific cross section and a module comprising said photovolatic element
US5903382A (en) 1997-12-19 1999-05-11 Rockwell International Corporation Electrodeposition cell with high light transmission
DE19980447D2 (de) 1998-03-13 2001-04-12 Steffen Keller Solarzellenanordnung
JP3647312B2 (ja) 1998-05-20 2005-05-11 キヤノン株式会社 太陽光発電構造体
US20070108437A1 (en) 1998-06-08 2007-05-17 Avto Tavkhelidze Method of fabrication of high temperature superconductors based on new mechanism of electron-electron interaction
US6468828B1 (en) 1998-07-14 2002-10-22 Sky Solar L.L.C. Method of manufacturing lightweight, high efficiency photovoltaic module
US6303853B1 (en) 1998-08-06 2001-10-16 Jx Crystals Inc. Shingle circuits for thermophotovoltaic systems
US6232545B1 (en) 1998-08-06 2001-05-15 Jx Crystals Inc. Linear circuit designs for solar photovoltaic concentrator and thermophotovoltaic applications using cell and substrate materials with matched coefficients of thermal expansion
CN1134071C (zh) 1998-11-04 2004-01-07 北京市太阳能研究所 一种太阳能电池及其制作方法
US6488824B1 (en) 1998-11-06 2002-12-03 Raycom Technologies, Inc. Sputtering apparatus and process for high rate coatings
JP2000164902A (ja) 1998-11-27 2000-06-16 Kyocera Corp 太陽電池
US8076568B2 (en) 2006-04-13 2011-12-13 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8222513B2 (en) 2006-04-13 2012-07-17 Daniel Luch Collector grid, electrode structures and interconnect structures for photovoltaic arrays and methods of manufacture
US7635810B2 (en) 1999-03-30 2009-12-22 Daniel Luch Substrate and collector grid structures for integrated photovoltaic arrays and process of manufacture of such arrays
US6034322A (en) 1999-07-01 2000-03-07 Space Systems/Loral, Inc. Solar cell assembly
JP2001148500A (ja) 1999-11-22 2001-05-29 Sanyo Electric Co Ltd 太陽電池モジュール
US6538193B1 (en) 2000-04-21 2003-03-25 Jx Crystals Inc. Thermophotovoltaic generator in high temperature industrial process
US6586270B2 (en) 2000-06-01 2003-07-01 Canon Kabushiki Kaisha Process for producing a photovoltaic element
JP5081345B2 (ja) 2000-06-13 2012-11-28 富士フイルム株式会社 光電変換素子の製造方法
US6333457B1 (en) 2000-08-29 2001-12-25 Sunpower Corporation Edge passivated silicon solar/photo cell and method of manufacture
DE10042733A1 (de) 2000-08-31 2002-03-28 Inst Physikalische Hochtech Ev Multikristalline laserkristallisierte Silicium-Dünnschicht-Solarzelle auf transparentem Substrat
JP3490964B2 (ja) 2000-09-05 2004-01-26 三洋電機株式会社 光起電力装置
US20020189939A1 (en) 2001-06-14 2002-12-19 German John R. Alternating current rotatable sputter cathode
US6620645B2 (en) 2000-11-16 2003-09-16 G.T. Equipment Technologies, Inc Making and connecting bus bars on solar cells
JP4055358B2 (ja) 2000-12-12 2008-03-05 サンケン電気株式会社 半導体装置及びその製造方法
US20020086456A1 (en) 2000-12-19 2002-07-04 Cunningham Shawn Jay Bulk micromachining process for fabricating an optical MEMS device with integrated optical aperture
CN1291502C (zh) 2001-03-19 2006-12-20 信越半导体株式会社 太阳能电池及其制造方法
US7283519B2 (en) 2001-04-13 2007-10-16 Esn, Llc Distributed edge switching system for voice-over-packet multiservice network
US7173275B2 (en) 2001-05-21 2007-02-06 Regents Of The University Of Colorado Thin-film transistors based on tunneling structures and applications
JP2003069055A (ja) 2001-06-13 2003-03-07 Sharp Corp 太陽電池セルとその製造方法
US7399385B2 (en) 2001-06-14 2008-07-15 Tru Vue, Inc. Alternating current rotatable sputter cathode
US20030000568A1 (en) 2001-06-15 2003-01-02 Ase Americas, Inc. Encapsulated photovoltaic modules and method of manufacturing same
US6713670B2 (en) 2001-08-17 2004-03-30 Composite Optics, Incorporated Electrostatically clean solar array
US6664589B2 (en) 2001-08-30 2003-12-16 Micron Technology, Inc. Technique to control tunneling currents in DRAM capacitors, cells, and devices
US6563040B2 (en) 2001-10-11 2003-05-13 Pinnacle West Capital Corporation Structure for supporting a photovoltaic module in a solar energy collection system
US6672018B2 (en) 2001-10-12 2004-01-06 Jefferson Shingleton Solar module mounting method and clip
US7469299B2 (en) 2001-10-25 2008-12-23 Verizon Business Global Llc Bridging user agent and a proxy server for supporting network services
CN1180486C (zh) 2001-10-31 2004-12-15 四川大学 透明导电膜前电极晶体硅太阳能电池
US20030116185A1 (en) 2001-11-05 2003-06-26 Oswald Robert S. Sealed thin film photovoltaic modules
JP3902534B2 (ja) 2001-11-29 2007-04-11 三洋電機株式会社 光起電力装置及びその製造方法
US20030121228A1 (en) 2001-12-31 2003-07-03 Stoehr Robert P. System and method for dendritic web solar cell shingling
US6736948B2 (en) 2002-01-18 2004-05-18 Von Ardenne Anlagentechnik Gmbh Cylindrical AC/DC magnetron with compliant drive system and improved electrical and thermal isolation
US6683360B1 (en) 2002-01-24 2004-01-27 Fillfactory Multiple or graded epitaxial wafers for particle or radiation detection
US20030154667A1 (en) 2002-02-20 2003-08-21 Dinwoodie Thomas L. Shingle system
JP4070483B2 (ja) 2002-03-05 2008-04-02 三洋電機株式会社 光起電力装置並びにその製造方法
US20030173217A1 (en) 2002-03-14 2003-09-18 Sputtering Components, Inc. High-power ion sputtering magnetron
DE10213049A1 (de) 2002-03-22 2003-10-02 Dieter Wurczinger Drehbare Rohrkatode
US7388146B2 (en) 2002-04-24 2008-06-17 Jx Crystals Inc. Planar solar concentrator power module
US6803513B2 (en) 2002-08-20 2004-10-12 United Solar Systems Corporation Series connected photovoltaic module and method for its manufacture
EP1398837A1 (en) 2002-09-09 2004-03-17 Interuniversitair Microelektronica Centrum ( Imec) Photovoltaic device
US7126052B2 (en) 2002-10-02 2006-10-24 The Boeing Company Isoelectronic surfactant induced sublattice disordering in optoelectronic devices
JP2004134672A (ja) 2002-10-11 2004-04-30 Sony Corp 超薄型半導体装置の製造方法および製造装置、並びに超薄型の裏面照射型固体撮像装置の製造方法および製造装置
JP2004193350A (ja) 2002-12-11 2004-07-08 Sharp Corp 太陽電池セルおよびその製造方法
US6870600B2 (en) 2003-01-13 2005-03-22 Nikon Corporation Vibration-attenuation devices and methods using pressurized bellows exhibiting substantially zero lateral stiffness
JP2004235274A (ja) 2003-01-28 2004-08-19 Kyocera Corp 多結晶シリコン基板およびその粗面化法
JP2004304167A (ja) 2003-03-20 2004-10-28 Advanced Lcd Technologies Development Center Co Ltd 配線、表示装置及び、これらの形成方法
US7388147B2 (en) 2003-04-10 2008-06-17 Sunpower Corporation Metal contact structure for solar cell and method of manufacture
JP4118187B2 (ja) 2003-05-09 2008-07-16 信越半導体株式会社 太陽電池の製造方法
US20050064247A1 (en) 2003-06-25 2005-03-24 Ajit Sane Composite refractory metal carbide coating on a substrate and method for making thereof
DE102004031950A1 (de) 2003-06-26 2005-02-10 Kyocera Corp. Halbleiter/Elektroden-Kontaktstruktur und eine solche verwendendes Halbleiterbauteil
JP3722813B2 (ja) 2003-07-08 2005-11-30 沖電気工業株式会社 埋め込み配線構造の形成方法
US7455787B2 (en) 2003-08-01 2008-11-25 Sunpower Corporation Etching of solar cell materials
US7172184B2 (en) 2003-08-06 2007-02-06 Sunpower Corporation Substrate carrier for electroplating solar cells
US7199395B2 (en) * 2003-09-24 2007-04-03 Sanyo Electric Co., Ltd. Photovoltaic cell and method of fabricating the same
JP4232597B2 (ja) 2003-10-10 2009-03-04 株式会社日立製作所 シリコン太陽電池セルとその製造方法
US20050189015A1 (en) 2003-10-30 2005-09-01 Ajeet Rohatgi Silicon solar cells and methods of fabrication
JP2005142268A (ja) 2003-11-05 2005-06-02 Canon Inc 光起電力素子およびその製造方法
US20070202029A1 (en) 2003-12-04 2007-08-30 Gary Burns Method Of Removing Impurities From Metallurgical Grade Silicon To Produce Solar Grade Silicon
DE10357698A1 (de) 2003-12-09 2005-07-14 Schunk Kohlenstofftechnik Gmbh Träger für zu behandelnde Gegenstände sowie Verfahren zur Herstellung eines solchen
EP2256786A1 (en) 2004-01-15 2010-12-01 Japan Science and Technology Agency Process for producing monocrystal thin film and monocrystal thin film device
WO2005074039A1 (ja) 2004-01-28 2005-08-11 Kyocera Corporation 太陽電池モジュール及び太陽光発電装置
EP1560272B1 (en) 2004-01-29 2016-04-27 Panasonic Intellectual Property Management Co., Ltd. Solar cell module
US20060060238A1 (en) 2004-02-05 2006-03-23 Advent Solar, Inc. Process and fabrication methods for emitter wrap through back contact solar cells
US20050252544A1 (en) 2004-05-11 2005-11-17 Ajeet Rohatgi Silicon solar cells and methods of fabrication
EP1598874A1 (en) 2004-05-19 2005-11-23 Dutch Space B.V. Solar cell assembly
US7781672B2 (en) 2004-06-01 2010-08-24 Konarka Technologies, Inc. Photovoltaic module architecture
US7839022B2 (en) 2004-07-13 2010-11-23 Tigo Energy, Inc. Device for distributed maximum power tracking for solar arrays
US7087906B2 (en) 2004-09-08 2006-08-08 Nikon Corporation Bellows with spring anti-gravity device
US20060130891A1 (en) 2004-10-29 2006-06-22 Carlson David E Back-contact photovoltaic cells
US7432119B2 (en) 2005-01-11 2008-10-07 Semileds Corporation Light emitting diode with conducting metal substrate
FR2880989B1 (fr) 2005-01-20 2007-03-09 Commissariat Energie Atomique Dispositif semi-conducteur a heterojonctions et a structure inter-digitee
US7723215B2 (en) 2005-02-11 2010-05-25 Sarnoff Corporation Dark current reduction in back-illuminated imaging sensors and method of fabricating same
US8115093B2 (en) 2005-02-15 2012-02-14 General Electric Company Layer-to-layer interconnects for photoelectric devices and methods of fabricating the same
US20080121932A1 (en) 2006-09-18 2008-05-29 Pushkar Ranade Active regions with compatible dielectric layers
EP1696492B1 (en) 2005-02-25 2012-04-11 Sanyo Electric Co., Ltd. Photovoltaic cell
DE102005013668B3 (de) 2005-03-14 2006-11-16 Universität Stuttgart Solarzelle
US7759158B2 (en) 2005-03-22 2010-07-20 Applied Materials, Inc. Scalable photovoltaic cell and solar panel manufacturing with improved wiring
CN101156249B (zh) 2005-03-29 2011-02-23 京瓷株式会社 太阳能电池元件的捆包方法及太阳能电池元件的捆包体
US7494607B2 (en) 2005-04-14 2009-02-24 E.I. Du Pont De Nemours And Company Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom
DE102005019225B4 (de) * 2005-04-20 2009-12-31 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Heterokontaktsolarzelle mit invertierter Schichtstrukturgeometrie
US7375378B2 (en) 2005-05-12 2008-05-20 General Electric Company Surface passivated photovoltaic devices
JP5301758B2 (ja) 2005-05-19 2013-09-25 信越半導体株式会社 太陽電池
US8039731B2 (en) * 2005-06-06 2011-10-18 General Electric Company Photovoltaic concentrator for solar energy system
EP1734589B1 (en) 2005-06-16 2019-12-18 Panasonic Intellectual Property Management Co., Ltd. Method for manufacturing photovoltaic module
US20070023081A1 (en) 2005-07-28 2007-02-01 General Electric Company Compositionally-graded photovoltaic device and fabrication method, and related articles
US7906723B2 (en) 2008-04-30 2011-03-15 General Electric Company Compositionally-graded and structurally-graded photovoltaic devices and methods of fabricating such devices
WO2007120197A2 (en) 2005-11-04 2007-10-25 Dow Corning Corporation Encapsulation of photovoltaic cells
CN101305454B (zh) 2005-11-07 2010-05-19 应用材料股份有限公司 形成光致电压接点和连线的方法
JP2009516388A (ja) 2005-11-18 2009-04-16 レプリソールス テクノロジーズ アーベー 多層構造の形成方法
US20070132034A1 (en) 2005-12-14 2007-06-14 Giuseppe Curello Isolation body for semiconductor devices and method to form the same
US20070137699A1 (en) 2005-12-16 2007-06-21 General Electric Company Solar cell and method for fabricating solar cell
US8196360B2 (en) 2006-01-12 2012-06-12 Msr Innovations Inc. Photovoltaic solar roof tile assembly system
JP5025135B2 (ja) 2006-01-24 2012-09-12 三洋電機株式会社 光起電力モジュール
US7769887B1 (en) 2006-02-03 2010-08-03 Sprint Communications Company L.P. Opportunistic data transfer over heterogeneous wireless networks
DE102006009194A1 (de) 2006-02-22 2007-08-23 Siegfried Gutfleisch Anordnung aus einer tragenden Gebäudestruktur und einem Solarzellenaufbau
US8168880B2 (en) 2006-04-26 2012-05-01 Certainteed Corporation Shingle with photovoltaic element(s) and array of same laid up on a roof
US7737357B2 (en) 2006-05-04 2010-06-15 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts
US8571012B2 (en) 2006-05-12 2013-10-29 Oracle International Corporation Customized sip routing to cross firewalls
US20070283997A1 (en) 2006-06-13 2007-12-13 Miasole Photovoltaic module with integrated current collection and interconnection
US20070283996A1 (en) 2006-06-13 2007-12-13 Miasole Photovoltaic module with insulating interconnect carrier
JP4290747B2 (ja) 2006-06-23 2009-07-08 シャープ株式会社 光電変換素子およびインターコネクタ付き光電変換素子
US20080000522A1 (en) 2006-06-30 2008-01-03 General Electric Company Photovoltaic device which includes all-back-contact configuration; and related processes
US7829785B2 (en) 2006-08-04 2010-11-09 Solopower, Inc. Thin film solar cell with finger pattern
US7915517B2 (en) * 2006-08-16 2011-03-29 Lau Po K Bifacial photovoltaic devices
US20080047602A1 (en) 2006-08-22 2008-02-28 Guardian Industries Corp. Front contact with high-function TCO for use in photovoltaic device and method of making same
US7893348B2 (en) 2006-08-25 2011-02-22 General Electric Company Nanowires in thin-film silicon solar cells
US20080053519A1 (en) 2006-08-30 2008-03-06 Miasole Laminated photovoltaic cell
DE102006042617B4 (de) 2006-09-05 2010-04-08 Q-Cells Se Verfahren zur Erzeugung von lokalen Kontakten
FR2906406B1 (fr) 2006-09-26 2008-12-19 Commissariat Energie Atomique Procede de realisation de cellule photovoltaique a heterojonction en face arriere.
US20080264477A1 (en) 2006-10-09 2008-10-30 Soltaix, Inc. Methods for manufacturing three-dimensional thin-film solar cells
US7999174B2 (en) 2006-10-09 2011-08-16 Solexel, Inc. Solar module structures and assembly methods for three-dimensional thin-film solar cells
US20080092947A1 (en) 2006-10-24 2008-04-24 Applied Materials, Inc. Pulse plating of a low stress film on a solar cell substrate
DE102006051735A1 (de) 2006-10-30 2008-05-08 Merck Patent Gmbh Druckfähiges Medium zur Ätzung von oxidischen, transparenten, leitfähigen Schichten
US8013474B2 (en) 2006-11-27 2011-09-06 Xslent Energy Technologies, Llc System and apparatuses with multiple power extractors coupled to different power sources
US20080121276A1 (en) 2006-11-29 2008-05-29 Applied Materials, Inc. Selective electroless deposition for solar cells
US7799182B2 (en) 2006-12-01 2010-09-21 Applied Materials, Inc. Electroplating on roll-to-roll flexible solar cell substrates
JP4429306B2 (ja) 2006-12-25 2010-03-10 三洋電機株式会社 太陽電池セル及び太陽電池モジュール
US7825329B2 (en) 2007-01-03 2010-11-02 Solopower, Inc. Thin film solar cell manufacturing and integration
US20080173350A1 (en) 2007-01-18 2008-07-24 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080173347A1 (en) 2007-01-23 2008-07-24 General Electric Company Method And Apparatus For A Semiconductor Structure
JP5687837B2 (ja) 2007-02-16 2015-03-25 ナノグラム・コーポレイションＮａｎｏＧｒａｍ Ｃｏｒｐｏｒａｔｉｏｎ 太陽電池構造体、光起電モジュール及びこれらに対応する方法
JP2008205137A (ja) 2007-02-19 2008-09-04 Sanyo Electric Co Ltd 太陽電池及び太陽電池モジュール
US7534632B2 (en) 2007-02-20 2009-05-19 Advanced Chip Engineering Technology Inc. Method for circuits inspection and method of the same
DE202007002897U1 (de) * 2007-02-28 2008-07-10 SCHÜCO International KG Photovoltaisches Solarmodul
US7968792B2 (en) 2007-03-05 2011-06-28 Seagate Technology Llc Quantum dot sensitized wide bandgap semiconductor photovoltaic devices & methods of fabricating same
AU2008229050A1 (en) * 2007-03-16 2008-09-25 Bp Corporation North America Inc. Solar cells
EP1973167B1 (en) 2007-03-19 2018-06-13 Panasonic Intellectual Property Management Co., Ltd. Photovoltaic device and method of manufacturing the same
FR2914785B1 (fr) 2007-04-06 2009-05-15 Saint Gobain Ct Recherches Revetement de toiture photovoltaique
WO2008137966A2 (en) 2007-05-07 2008-11-13 Robert Stancel Structures for low cost, reliable solar roofing
US20080308145A1 (en) 2007-06-12 2008-12-18 Guardian Industries Corp Front electrode including transparent conductive coating on etched glass substrate for use in photovoltaic device and method of making same
KR101492946B1 (ko) 2007-07-26 2015-02-13 주성엔지니어링(주) 결정질 실리콘 태양전지와 그 제조방법 및 제조시스템
US20090056797A1 (en) 2007-08-28 2009-03-05 Blue Square Energy Incorporated Photovoltaic Thin-Film Solar Cell and Method Of Making The Same
US7709730B2 (en) 2007-09-05 2010-05-04 Skyline Solar, Inc. Dual trough concentrating solar photovoltaic module
US7749883B2 (en) 2007-09-20 2010-07-06 Fry's Metals, Inc. Electroformed stencils for solar cell front side metallization
CN101779290B (zh) 2007-09-25 2013-02-27 第一太阳能有限公司 包括界面层的光伏器件
TWI371112B (en) 2007-10-02 2012-08-21 Univ Chang Gung Solar energy photoelectric conversion apparatus
AU2007360045A1 (en) 2007-10-12 2009-04-16 System S.P.A. A process for connecting photovoltaic cells in series, a photovoltaic cell connectable in series using the process, and a module obtained with the process
GB2453746A (en) 2007-10-16 2009-04-22 Renewable Energy Corp Asa Parallel interconnection of solar cell units
KR20100080612A (ko) 2007-10-18 2010-07-09 이 아이 듀폰 디 네모아 앤드 캄파니 반도체 소자의 제조에 사용하기 위한 무연 전도성 조성물 및 공정: Ｍｇ-함유 첨가제
US8209920B2 (en) 2007-11-06 2012-07-03 Certain Teed Corporation Photovoltaic roofing systems and methods for installing them
US20090139512A1 (en) 2007-11-30 2009-06-04 Lima Daniel D De Solar Line Boiler Roof
US8021487B2 (en) 2007-12-12 2011-09-20 Veeco Instruments Inc. Wafer carrier with hub
TWI379425B (en) 2007-12-13 2012-12-11 Nexpower Technology Corp Translucent solar cell and manufacturing method thereof
US9263895B2 (en) 2007-12-21 2016-02-16 Sunpower Corporation Distributed energy conversion systems
TW200947725A (en) 2008-01-24 2009-11-16 Applied Materials Inc Improved HIT solar cell structure
US20090188561A1 (en) 2008-01-25 2009-07-30 Emcore Corporation High concentration terrestrial solar array with III-V compound semiconductor cell
CN101978224B (zh) 2008-02-20 2013-10-16 康宁股份有限公司 具有玻璃陶瓷中央管的太阳热能收集装置
US8222516B2 (en) 2008-02-20 2012-07-17 Sunpower Corporation Front contact solar cell with formed emitter
EP2249401A1 (en) 2008-02-21 2010-11-10 Sharp Kabushiki Kaisha Solar cell and method for manufacturing solar cell
US8187906B2 (en) 2008-02-28 2012-05-29 Sunlight Photonics Inc. Method for fabricating composite substances for thin film electro-optical devices
US7977220B2 (en) 2008-03-05 2011-07-12 Sri International Substrates for silicon solar cells and methods of producing the same
US20100043863A1 (en) 2008-03-20 2010-02-25 Miasole Interconnect assembly
US7833808B2 (en) 2008-03-24 2010-11-16 Palo Alto Research Center Incorporated Methods for forming multiple-layer electrode structures for silicon photovoltaic cells
US20090250108A1 (en) 2008-04-02 2009-10-08 Applied Materials, Inc. Silicon carbide for crystalline silicon solar cell surface passivation
US20090255574A1 (en) 2008-04-14 2009-10-15 Sierra Solar Power, Inc. Solar cell fabricated by silicon liquid-phase deposition
KR20110008284A (ko) 2008-04-29 2011-01-26 어플라이드 머티어리얼스, 인코포레이티드 모놀리식 모듈 어셈블리 기술들을 이용하여 제조된 광전지 모듈들
US7964499B2 (en) 2008-05-13 2011-06-21 Samsung Electronics Co., Ltd. Methods of forming semiconductor solar cells having front surface electrodes
TWI513014B (zh) 2008-05-19 2015-12-11 Tatung Co 高性能光電元件
US20090293948A1 (en) 2008-05-28 2009-12-03 Stichting Energieonderzoek Centrum Nederland Method of manufacturing an amorphous/crystalline silicon heterojunction solar cell
US20100229914A1 (en) 2008-06-04 2010-09-16 Solexant Corp. Solar cells with shunt resistance
EP2304803A1 (en) 2008-06-11 2011-04-06 Solar Implant Technologies Inc. Solar cell fabrication using implantation
KR20110036571A (ko) 2008-06-12 2011-04-07 이섬 리서치 디벨러프먼트 컴파니 오브 더 히브루 유니버시티 오브 예루살렘 엘티디. 깔때기 같은 홈 구조를 갖는 태양 전지
US8338218B2 (en) 2008-06-26 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device module and manufacturing method of the photoelectric conversion device module
DE102008030693A1 (de) 2008-07-01 2010-01-14 Institut Für Solarenergieforschung Gmbh Heterojunction-Solarzelle mit Absorber mit integriertem Dotierprofil
CN102077367B (zh) 2008-07-03 2012-12-26 Imec公司 多结光伏模块及其加工方法
KR101244027B1 (ko) 2008-07-08 2013-03-14 시너스 테크놀리지, 인코포레이티드 플렉서블 태양전지 제조방법
TWI390756B (zh) 2008-07-16 2013-03-21 Applied Materials Inc 使用摻質層遮罩之混合異接面太陽能電池製造
KR101065752B1 (ko) * 2008-08-19 2011-09-19 주식회사 티지솔라 태양전지모듈 및 그 제조방법
KR20100026291A (ko) 2008-08-29 2010-03-10 삼성전자주식회사 박막 태양 전지 모듈 및 그 제조 방법
DE102008045522A1 (de) 2008-09-03 2010-03-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Heterosolarzelle und Verfahren zur Herstellung von Heterosolarzellen
US20150075599A1 (en) 2013-09-19 2015-03-19 Zena Technologies, Inc. Pillar structured multijunction photovoltaic devices
US8637761B2 (en) 2008-09-16 2014-01-28 Silevo, Inc. Solar cells fabricated by using CVD epitaxial Si films on metallurgical-grade Si wafers
US8088675B2 (en) 2008-09-19 2012-01-03 Applied Materials, Inc. Methods of making an emitter having a desired dopant profile
US8070925B2 (en) 2008-10-17 2011-12-06 Applied Materials, Inc. Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target
US20100108134A1 (en) 2008-10-31 2010-05-06 Crystal Solar, Inc. Thin two sided single crystal solar cell and manufacturing process thereof
US8586857B2 (en) 2008-11-04 2013-11-19 Miasole Combined diode, lead assembly incorporating an expansion joint
WO2010056764A2 (en) 2008-11-12 2010-05-20 Mehrdad Nikoonahad High efficiency solar panel and system
US9150966B2 (en) 2008-11-14 2015-10-06 Palo Alto Research Center Incorporated Solar cell metallization using inline electroless plating
KR100993511B1 (ko) 2008-11-19 2010-11-12 엘지전자 주식회사 태양 전지 및 그 제조 방법
US20100132774A1 (en) 2008-12-11 2010-06-03 Applied Materials, Inc. Thin Film Silicon Solar Cell Device With Amorphous Window Layer
US20100147364A1 (en) 2008-12-16 2010-06-17 Solopower, Inc. Thin film photovoltaic module manufacturing methods and structures
DE102008055028A1 (de) 2008-12-19 2010-07-01 Q-Cells Se Solarzelle
KR101539047B1 (ko) 2008-12-24 2015-07-23 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 광기전력 변환 소자 및 그의 제조방법
WO2010075606A1 (en) 2008-12-29 2010-07-08 Shaun Joseph Cunningham Improved photo-voltaic device
US7945663B2 (en) 2008-12-29 2011-05-17 Genband Inc. Systems, methods, and computer program products for adaptively adjusting a registration interval of an endpoint
US20100175743A1 (en) 2009-01-09 2010-07-15 Solopower, Inc. Reliable thin film photovoltaic module structures
US20100186802A1 (en) 2009-01-27 2010-07-29 Peter Borden Hit solar cell structure
US9029181B2 (en) 2009-02-02 2015-05-12 Hanergy Hi-Tech Power (Hk) Limited Two-part screen printing for solar collection grid
CA2655007C (en) * 2009-02-20 2017-06-27 Queen's University At Kingston Photovoltaic cell inverter
DE102009012539A1 (de) 2009-03-10 2010-09-23 Tyco Electronics Amp Gmbh Verbindungsvorrichtung zum Anschluss an ein Solarmodul und Solarmodul mit einer solchen Verbindungsvorrichtung
US8283557B2 (en) 2009-03-10 2012-10-09 Silevo, Inc. Heterojunction solar cell based on epitaxial crystalline-silicon thin film on metallurgical silicon substrate design
US8182662B2 (en) 2009-03-27 2012-05-22 Sputtering Components, Inc. Rotary cathode for magnetron sputtering apparatus
CN102460715B (zh) 2009-04-21 2015-07-22 泰特拉桑有限公司 高效率太阳能电池结构及制造方法
EP2426726A1 (en) 2009-04-30 2012-03-07 Mitsubishi Electric Corporation Solar battery cell
US20100279492A1 (en) 2009-05-02 2010-11-04 Atomic Energy Council-Institute Of Nuclear Energy Research Method of Fabricating Upgraded Metallurgical Grade Silicon by External Gettering Procedure
EP2433309B1 (de) 2009-05-18 2023-04-19 Markus Hörmann Vermietungen und Verpachtungen Anordnung und verschaltung, sowie verfahren zur verschaltung von flächenartigen solarzellen
US20100300507A1 (en) 2009-06-02 2010-12-02 Sierra Solar Power, Inc. High efficiency low cost crystalline-si thin film solar module
US9537032B2 (en) 2009-06-02 2017-01-03 Solarcity Corporation Low-cost high-efficiency solar module using epitaxial Si thin-film absorber and double-sided heterojunction solar cell with integrated module fabrication
TW201044601A (en) 2009-06-08 2010-12-16 Univ Nat Chiao Tung Three-dimensional indium-tin-oxide electrode, method of fabricating the same, device of fabricating the same, and method of fabricating solar cell comprising the same
CN102804392A (zh) 2009-06-22 2012-11-28 国际商业机器公司 半导体光学检测器结构
US20110146781A1 (en) 2009-06-26 2011-06-23 E.I. Du Pont De Nemours And Company Process of forming a grid cathode on the front-side of a silicon wafer
US20110005920A1 (en) 2009-07-13 2011-01-13 Seagate Technology Llc Low Temperature Deposition of Amorphous Thin Films
US20110220194A1 (en) 2009-07-14 2011-09-15 Spectrawatt, Inc. Light conversion efficiency-enhanced solar cell fabricated with downshifting nanomaterial
US8258050B2 (en) 2009-07-17 2012-09-04 Hewlett-Packard Development Company, L.P. Method of making light trapping crystalline structures
US8343795B2 (en) 2009-09-12 2013-01-01 Yuhao Luo Method to break and assemble solar cells
JP5533878B2 (ja) 2009-09-18 2014-06-25 三洋電機株式会社 太陽電池、太陽電池モジュールおよび太陽電池システム
DE102009043047A1 (de) 2009-09-28 2011-04-14 Schott Solar Ag Solarzelle
US20110073175A1 (en) 2009-09-29 2011-03-31 Twin Creeks Technologies, Inc. Photovoltaic cell comprising a thin lamina having emitter formed at light-facing and back surfaces
WO2011046664A2 (en) 2009-10-15 2011-04-21 Applied Materials, Inc. A barrier layer disposed between a substrate and a transparent conductive oxide layer for thin film silicon solar cells
KR101301029B1 (ko) 2009-10-30 2013-08-28 엘지전자 주식회사 박막 태양전지 모듈
JP5706439B2 (ja) 2009-12-11 2015-04-22 カーゲーテー・グラフィート・テヒノロギー・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 基板支持体
WO2011073971A2 (en) 2009-12-16 2011-06-23 Shenkar College Of Engineering And Design Photovoltaic device and method of its fabrication
US8759664B2 (en) 2009-12-28 2014-06-24 Hanergy Hi-Tech Power (Hk) Limited Thin film solar cell strings
TWI425597B (zh) 2009-12-31 2014-02-01 Kingpak Tech Inc 具有黑色膠體之影像感測器封裝結構
US8895838B1 (en) 2010-01-08 2014-11-25 Magnolia Solar, Inc. Multijunction solar cell employing extended heterojunction and step graded antireflection structures and methods for constructing the same
TWI396292B (zh) 2010-01-11 2013-05-11 Tatung Co 太陽能電池及其製造方法
KR101884255B1 (ko) 2010-01-12 2018-08-01 래티스세미컨덕터코퍼레이션 홈 멀티미디어 네트워크에서의 비디오 관리 및 제어
US20120031480A1 (en) 2010-01-20 2012-02-09 Tisler Anthony C Current collection system for a photovoltaic cell
EP2541594A4 (en) 2010-02-24 2016-12-07 Toyota Motor Co Ltd SEMICONDUCTOR MODULE MANUFACTURING METHOD, SEMICONDUCTOR MODULE AND MANUFACTURING METHOD
US20110220182A1 (en) 2010-03-12 2011-09-15 Rfmarq, Inc. Solar Panel Tracking and Performance Monitoring Through Wireless Communication
CA2791288A1 (en) 2010-03-31 2011-10-06 Mustang Vacuum Systems, Llc Cylindrical rotating magnetron sputtering cathode device and method of depositing material using radio frequency emissions
US20110245957A1 (en) 2010-04-06 2011-10-06 Applied Materials, Inc. Advanced platform for processing crystalline silicon solar cells
US20130139878A1 (en) 2010-04-07 2013-06-06 Applied Materials, Inc. Use of a1 barrier layer to produce high haze zno films on glass substrates
DE102010028189B4 (de) 2010-04-26 2018-09-27 Solarworld Industries Gmbh Solarzelle
US8686283B2 (en) 2010-05-04 2014-04-01 Silevo, Inc. Solar cell with oxide tunneling junctions
US20120318340A1 (en) 2010-05-04 2012-12-20 Silevo, Inc. Back junction solar cell with tunnel oxide
US20110277816A1 (en) 2010-05-11 2011-11-17 Sierra Solar Power, Inc. Solar cell with shade-free front electrode
US20110277825A1 (en) 2010-05-14 2011-11-17 Sierra Solar Power, Inc. Solar cell with metal grid fabricated by electroplating
US9240513B2 (en) 2010-05-14 2016-01-19 Solarcity Corporation Dynamic support system for quartz process chamber
US20110308573A1 (en) * 2010-06-21 2011-12-22 Fraunhofer USA, Inc. Center for Sustainable Energy Systems Devices and methods to create a diffuse reflection surface
TW201203574A (en) 2010-07-14 2012-01-16 Solapoint Corp Solar cell device having an air-bridge type contact
US8846451B2 (en) 2010-07-30 2014-09-30 Applied Materials, Inc. Methods for depositing metal in high aspect ratio features
US8883552B2 (en) 2010-08-11 2014-11-11 Crystal Solar Inc. MWT architecture for thin SI solar cells
KR20140007327A (ko) 2010-09-07 2014-01-17 다우 글로벌 테크놀로지스 엘엘씨 개선된 광발전 전지 조립체
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US8221600B2 (en) 2010-09-23 2012-07-17 Sunpower Corporation Sealed substrate carrier for electroplating
US20120080083A1 (en) 2010-09-30 2012-04-05 Twin Creeks Technologies, Inc. Semiconductor assembly with a metal oxide layer having intermediate refractive index
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
KR101275575B1 (ko) 2010-10-11 2013-06-14 엘지전자 주식회사 후면전극형 태양전지 및 이의 제조 방법
US20120125391A1 (en) 2010-11-19 2012-05-24 Solopower, Inc. Methods for interconnecting photovoltaic cells
JP5857237B2 (ja) 2010-11-29 2016-02-10 パナソニックＩｐマネジメント株式会社 太陽電池セル及び太陽電池モジュール
DE102010061317B4 (de) 2010-12-17 2022-10-06 Hanwha Q Cells Gmbh Siebdruckmaske zur Herstellung einer Elektrodenfingerstruktur für Wafersolarzellen und Verfahren zur Herstellung einer Wafersolarzelle unter Einsatz einer solchen Siebdruckmaske
US20120152349A1 (en) 2010-12-17 2012-06-21 Solopower, Inc. Junction box attachment for photovoltaic thin film devices
US20120325671A2 (en) 2010-12-17 2012-12-27 Tel Nexx, Inc. Electroplated lead-free bump deposition
EP2672523B2 (en) 2011-01-31 2019-02-06 Shin-Etsu Chemical Co., Ltd. Screen printing plate for solar cell and method for printing solar cell electrode
US8975510B2 (en) 2011-03-25 2015-03-10 Cellink Corporation Foil-based interconnect for rear-contact solar cells
US20120192932A1 (en) 2011-03-25 2012-08-02 Neo Solar Power Corp. Solar cell and its electrode structure
US8525191B2 (en) 2011-04-01 2013-09-03 Sabic Innovative Plastics Ip B.V. Optoelectronic devices and coatings therefore
US20130112239A1 (en) 2011-04-14 2013-05-09 Cool Earh Solar Solar energy receiver
US20120285517A1 (en) 2011-05-09 2012-11-15 International Business Machines Corporation Schottky barrier solar cells with high and low work function metal contacts
US20130130430A1 (en) 2011-05-20 2013-05-23 Solexel, Inc. Spatially selective laser annealing applications in high-efficiency solar cells
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
US20120318319A1 (en) 2011-06-17 2012-12-20 Solopower, Inc. Methods of interconnecting thin film solar cells
US20120325282A1 (en) 2011-06-24 2012-12-27 Solopower, Inc. Solar cells with grid wire interconnections
EP2546889B1 (en) 2011-07-12 2020-06-17 Airbus Defence and Space GmbH Solar cell assembly and method of fabrication of solar cell assembly
US20140318611A1 (en) 2011-08-09 2014-10-30 Solexel, Inc. Multi-level solar cell metallization
US20130228221A1 (en) 2011-08-05 2013-09-05 Solexel, Inc. Manufacturing methods and structures for large-area thin-film solar cells and other semiconductor devices
US20130213469A1 (en) 2011-08-05 2013-08-22 Solexel, Inc. High efficiency solar cell structures and manufacturing methods
WO2013020590A1 (de) 2011-08-09 2013-02-14 Kioto Photovoltaics Gmbh Rechteckige solarzelle und zugehörige solarzellen-anordnung
US20150171230A1 (en) 2011-08-09 2015-06-18 Solexel, Inc. Fabrication methods for back contact solar cells
CN103918088B (zh) 2011-08-09 2017-07-04 速力斯公司 利用细晶半导体吸收体的高效太阳能光伏电池及模块
KR101969032B1 (ko) 2011-09-07 2019-04-15 엘지전자 주식회사 태양전지 및 이의 제조방법
WO2013046351A1 (ja) 2011-09-28 2013-04-04 三洋電機株式会社 太陽電池及び太陽電池の製造方法
US20130096710A1 (en) 2011-10-17 2013-04-18 Solopower, Inc. Tracking system and method for solar cell manufacturing
US8853525B2 (en) * 2011-11-14 2014-10-07 Prism Solar Technologies, Inc. Frameless photovoltaic module
KR20130081484A (ko) 2012-01-09 2013-07-17 엘지전자 주식회사 박막 태양 전지
KR101449942B1 (ko) 2012-01-17 2014-10-17 주식회사 호진플라텍 전기도금 및 광 유도 도금을 병행하는 태양전지 기판용 도금장치 및 도금 방법
US20130206221A1 (en) 2012-02-13 2013-08-15 John Anthony Gannon Solar cell with metallization compensating for or preventing cracking
KR101894585B1 (ko) 2012-02-13 2018-09-04 엘지전자 주식회사 태양전지
US9379269B2 (en) 2012-02-29 2016-06-28 Bakersun Bifacial crystalline silicon solar panel with reflector
EP2834847B1 (en) 2012-04-03 2021-06-02 Flisom AG Thin-film photovoltaic device with wavy monolithic interconnects
KR101918738B1 (ko) 2012-04-17 2018-11-15 엘지전자 주식회사 태양 전지
DE102012010151A1 (de) 2012-05-24 2013-11-28 Manz Ag Thermisch optimierter elektrostatischer Substrathalter
US20140000682A1 (en) 2012-06-27 2014-01-02 E I Du Pont De Nemours And Company Integrated back-sheet for back contact photovoltaic module
US9227259B2 (en) 2012-08-22 2016-01-05 International Business Machines Corporation Increasing the efficiency of solar cells by transfer of solder
US9050517B2 (en) 2012-09-05 2015-06-09 Bryan P. Oliver Ski training device and method
US20140102524A1 (en) 2012-10-15 2014-04-17 Silevo, Inc. Novel electron collectors for silicon photovoltaic cells
US9780253B2 (en) 2014-05-27 2017-10-03 Sunpower Corporation Shingled solar cell module
US20140124014A1 (en) 2012-11-08 2014-05-08 Cogenra Solar, Inc. High efficiency configuration for solar cell string
US20140124013A1 (en) 2012-11-08 2014-05-08 Cogenra Solar, Inc. High efficiency configuration for solar cell string
US9947820B2 (en) 2014-05-27 2018-04-17 Sunpower Corporation Shingled solar cell panel employing hidden taps
US9287431B2 (en) 2012-12-10 2016-03-15 Alliance For Sustainable Energy, Llc Superstrate sub-cell voltage-matched multijunction solar cells
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
CN105164816B (zh) 2013-01-28 2017-03-08 环球太阳能公司 光伏互连系统、装置和方法
US10615297B2 (en) 2013-02-22 2020-04-07 International Business Machines Corporation Electrode formation for heterojunction solar cells
US9496448B2 (en) * 2013-03-15 2016-11-15 Sandia Corporation Customized color patterning of photovoltaic cells
US20140345674A1 (en) 2013-05-24 2014-11-27 Silevo, Inc. Moisture ingress resistant photovoltaic module
US20150096613A1 (en) 2013-06-24 2015-04-09 Sino-American Silicon Products Inc. Photovoltaic device and method of manufacturing the same
KR101622089B1 (ko) 2013-07-05 2016-05-18 엘지전자 주식회사 태양 전지 및 이의 제조 방법
US9831369B2 (en) 2013-10-24 2017-11-28 National Technology & Engineering Solutions Of Sandia, Llc Photovoltaic power generation system with photovoltaic cells as bypass diodes
US20150179834A1 (en) 2013-12-20 2015-06-25 Mukul Agrawal Barrier-less metal seed stack and contact
US11811360B2 (en) 2014-03-28 2023-11-07 Maxeon Solar Pte. Ltd. High voltage solar modules
US20150349176A1 (en) 2014-05-27 2015-12-03 Cogenra Solar, Inc. High voltage solar panel
CN108091705B (zh) 2014-05-27 2019-07-02 太阳能公司 叠盖式太阳能电池模块
US20160233352A1 (en) 2014-12-05 2016-08-11 Solarcity Corporation Photovoltaic electrode design with contact pads for cascaded application

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060260673A1 (en) * 2003-10-17 2006-11-23 Canon Kabushiki Kaisha Photovoltaic element and method of producing photovoltaic element
CN101233620A (zh) * 2005-07-28 2008-07-30 通用电气公司 组成渐变光伏装置及其制备方法与相关制品技术
CN102403386A (zh) * 2010-09-10 2012-04-04 南通美能得太阳能电力科技有限公司 一种双面太阳能电池组件及其制作方法
CN201928739U (zh) * 2010-11-19 2011-08-17 天津滨海国际花卉科技园区股份有限公司 温室作物的肥料及淡水喷淋系统
CN102088040A (zh) * 2010-12-09 2011-06-08 泰通(泰州)工业有限公司 双面电池组件
CN202009023U (zh) * 2011-04-06 2011-10-12 中节能太阳能科技（镇江）有限公司 一种无边框的太阳能电池组件
CN202423340U (zh) * 2012-01-20 2012-09-05 英利集团有限公司 一种n型太阳能双面发电组件
CN104205347A (zh) * 2012-02-15 2014-12-10 奥塔装置公司 包含搭叠光伏瓦片的光伏模块及其制造工艺
WO2014066265A1 (en) * 2012-10-25 2014-05-01 Sunpower Corporation Bifacial solar cell module with backside reflector
US20140196768A1 (en) * 2013-01-11 2014-07-17 Silevo, Inc. Module fabrication of solar cells with low resistivity electrodes

Also Published As

Publication number Publication date
WO2016126416A1 (en) 2016-08-11
CN106159020B (zh) 2018-04-03
CN204928739U (zh) 2015-12-30
EP3254314A1 (en) 2017-12-13
US20160225931A1 (en) 2016-08-04
US9947822B2 (en) 2018-04-17
MX2017009942A (es) 2017-12-07

Similar Documents

Publication Publication Date Title
CN106159020B (zh) 使用异质结太阳能电池的双面光伏模块
US10164127B2 (en) Module fabrication of solar cells with low resistivity electrodes
US10115839B2 (en) Module fabrication of solar cells with low resistivity electrodes
US10074755B2 (en) High efficiency solar panel
CN102017166A (zh) 用于改善pv美学和效率的方法
CN105917472B (zh) 高效率太阳能面板
CN104465892A (zh) 太阳电池串中相邻太阳电池的同侧互联的光伏组件制作方法
US20070227579A1 (en) Assemblies of cylindrical solar units with internal spacing
KR20140003691A (ko) 태양 전지 모듈 및 이에 적용되는 리본 결합체
US20110277819A1 (en) Bifacial thin film solar panel and methods for producing the same
KR101652607B1 (ko) 직렬 연결형 박막 태양광 모듈 및 박막 태양 전지의 직렬 연결 방법
US20230144536A1 (en) Designable shingled photovoltaic module and manufacturing method therefor
CN106449796B (zh) 一种用于太阳电池的电极
US20190131475A1 (en) Photovoltaic cell, photovoltaic cell array, solar cell, and method for preparing photovoltaic cell
CN207947297U (zh) 一种利用反射光提升转换效率的叠片组件
WO2023159995A1 (zh) 异质结电池、光伏组件电池串及其制造方法
CN206236680U (zh) 一种用于太阳电池的电极
KR101562191B1 (ko) 고효율 태양전지
CN106409953A (zh) 一种太阳能电池镀膜铜线栅电流收集极结构及制备方法
KR102000063B1 (ko) 태양 전지 모듈
CN104241431B (zh) 一种叠层太阳能电池及其制备方法
CN209471983U (zh) 一种异质结太阳电池间的互联结构
JP2001250969A (ja) 薄膜太陽電池モジュール

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP01 Change in the name or title of a patent holder

Address after: California, USA

Patentee after: Tesla Corp.

Address before: California, USA

Patentee before: Tesla Motors, Inc.

CP01 Change in the name or title of a patent holder
TR01 Transfer of patent right

Effective date of registration: 20191025

Address after: California, USA

Patentee after: Tesla Motors, Inc.

Address before: California, USA

Patentee before: SILEVO, Inc.

TR01 Transfer of patent right