CN105493246B - 具有改善传导能力的高频导体 - Google Patents

具有改善传导能力的高频导体 Download PDF

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CN105493246B
CN105493246B CN201480022203.9A CN201480022203A CN105493246B CN 105493246 B CN105493246 B CN 105493246B CN 201480022203 A CN201480022203 A CN 201480022203A CN 105493246 B CN105493246 B CN 105493246B
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basic material
plug
frequency
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CN105493246A (zh
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M.米库利克斯
H.哈特德根
D.格吕茨马歇尔
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Forschungszentrum Juelich GmbH
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Abstract

本发明涉及具有改善传导能力的高频导体。它包括至少一个导电的基础材料。根据本发明基础材料的可由电流穿透外部和内部表面对基础材料的总体积的比例通过a）基础材料垂直于电流方向分成至少两个节段，该至少两个节段通过导电的插件分隔以及电和机械彼此相连，和/或b）在基础材料的表面中或上的地形结构和/或c）基础材料的至少一个部分的内部多孔性比较基础材料的成型提高，在成型中省略相应特征。可认识到，可通过成型有关的措施如此空间上布置相同数量的基础材料，使得较大部分的基础材料位于从外部或内部表面的最高的趋肤深度的距离并且因此参与电流传输。因此较小部分由于趋肤效应保持未使用。

Description

具有改善传导能力的高频导体
技术领域
本发明涉及具有改善传导能力的高频导体。
现有技术
直流电完全穿透电导体，通过该电导体引导直流电。交流电此时涌进导体中直到材料和频率有关的趋肤深度，这是因为在导体内部中由电流产生的磁交变场基于排尽原理（Lenzschen Regel）感应产生反向电压，该反向电压使电流挤压在导体的边缘上。由此仅提供直到趋肤深度的导体截面的边缘区域用于电流传输。导体截面的其余不用于电流传输。为了减小导体的电阻抗，已知放大导体，使得还使承载电流的边缘区域更大。不利地以导体材料的大额外体积换来较小的传导能力的净收益，该导体材料因为趋肤效应不参与电流传输。传导最好的金属是贵金属并且因此非常高成本。
发明内容
任务和解决方案
在此本发明的任务在于，提供高频导体供使用，该高频导体在同时较小材料成本的情况下具有改善的传导能力。
这个任务根据本发明通过根据独立权利要求的高频导体以及通过根据并行权利要求的制造方法来解决。此外有利的扩展方案通过引用它们的从属权利要求给出。
本发明的对象
在本发明的范围中研发高频导体，其包括至少一个导电的基础材料。
根据本发明基础材料的可由电流穿透的外部和内部表面对基础材料的总体积的比例通过
a）基础材料垂直于电流方向分成至少两个节段，该至少两个节段通过导电的插件分隔以及电和机械彼此相连，和/或
b）在基础材料的表面中或上的地形结构和/或
c）基础材料的至少一个部分的内部多孔性
比较基础材料的成型提高，在该成型中省略相应特征。
可认识到，可通过成型有关的措施如此空间上布置相同数量的基础材料，使得较大部分的基础材料位于从外部或内部表面的最高的趋肤深度的一定距离处并且因此参与电流传输。因此较小部分由于趋肤效应保持未使用。
如果对基础材料分段，则有利的至少一个节段在每个垂直于电流方向的方向上具有在最大运行频率的情况下双重的基础材料的趋肤深度和在最低运行频率的情况下的2.5倍的基础材料的趋肤深度之间的延展。较小延展窄化传导能力，明显更高的延展在此还产生较高材料成本，然而没有更多传导能力的生长。
有利地插件由材料组成，该材料由腐蚀剂侵蚀，相对于腐蚀剂基础材料是耐久的。然后高频导体可以特别简单地制造，其方式为交替的层由基础材料和插件的材料在衬底上生长并且接着使用腐蚀剂。然后对由插件的材料制成的层从两个侧同时侵蚀。在两个侵蚀位置之间的中间保留了剩余物，剩余物的宽度取决于侵蚀时间和侵蚀速度。不需要平版印刷步骤的复杂序列。
对于插件仅要求，使得它具有金属的传导能力并且它是机械稳定的。如果高频导体施加到半导体上，则对于每个半导体存在特别合适能传导的材料的组，其形成例如与半导体的肖特基接触。
有利地插件的材料是来自第3或第4主族的金属或过渡金属或它包含至少一个这样的金属作为合金元素。特别有利地插件的材料属于组(Ti，V，Cr，Mn，Fe，Co，Ni，Cu，Zn)或它包含来自这个组的至少一个金属作为合金元素。这个材料尤其是通过湿化学的腐蚀剂集合可通行的传导能力和良好可侵蚀性。如果使用其中并非取决于此的制造方法，但是插件的材料还可以是例如贵金属并且尤其是与基础材料相同。
如果基础材料地形结构化，则有利的至少30%，优选至少50%和特别优选至少80%的地形结构在每个垂直于电流方向的方向上具有在最大运行频率的情况下双重的基础材料的趋肤深度和在最低运行频率的情况下2.5倍的基础材料的趋肤深度之间的延展。然后结构基本上完全由电流穿透。
如果基础材料是多孔的，则有利地至少30%，优选至少50%和特别优选至少80%的细孔到其最接近邻居的最小距离在最大运行频率的情况下在双重的基础材料的趋肤深度和在最低运行频率的情况下2.5倍的基础材料的趋肤深度之间。然后细孔之间的区域基本上完全由电流穿透，并且仅留下少量的基础材料，该少量的基础材料不有助于电流传输。
有利地基础材料是碳或贵金属或次贵金属或它包含来自这个组的至少一个材料作为合金元素。在本发明的特别有利的扩展方案中基础材料属于组(Ru，Rh，Pd，Ag，Os，Ir，Pt，Au)或它包含来自这个组的至少一个金属作为合金元素。碳和这些贵金属不仅是最好导电的，而且是相对环境影响和相对湿化学腐蚀剂耐久的，该腐蚀剂可能用于制造插件。
在本发明的特别有利的扩展方案中高频导体构造为晶体管的控制电极。高频导体可以尤其是作为场效应晶体管的栅电极。在场效应晶体管的情况下在尽可能高的切换频率和转换的陡度的益处下导致，栅电极可以尽可能快地用电荷占据或相反电荷尽可能快从其移走。
有利地高频导体作为栅电极通过导电插件（其限定栅极长度）耦合到场效应晶体管的半导通的栅极。栅极长度越小，晶体管的最大切换频率越大。
在本发明的另外特别有利的扩展方案中高频导体构造作为光探测器的聚集-或引出电极。尤其是在光探测器中根据MSM-原理(金属-半导体-金属，metal–semiconductor–metal)量子效率越好，聚集和引出电极的电阻抗越小。
如先前所述本发明还涉及用于制造根据本发明的高频导体的方法。在此在衬底上交替的层由插件的材料和由基础材料生长。层堆接着暴露于腐蚀剂，插件的材料各向同性地腐蚀并且同时不侵蚀衬底和基础材料。通过侵蚀速度和侵蚀时间的共同作用可以调节在侵蚀过程之后残留的插件的宽度。
有利地选择可稀释的腐蚀剂。然后侵蚀速度可以通过稀释度调节。腐蚀剂可以是例如酸或碱。稀释可以，但是不一定用水实现。还可以使用例如其他溶剂来进行稀释。
附图说明
下面根据附图解释本发明的对象，而本发明的对象不限于此。其示出:
图1示出根据本发明的高频导体的实施例。
图2示出可达到的电流密度的频率特征和与现有技术的比较。
图3示出根据本发明的制造方法的实施例。
图4示出根据本发明的高频导体的光栅电子显微摄影以及和现有技术的比较。
图5示出具有根据本发明的高频导体作为栅极的晶体管和具有根据现有技术的栅极的晶体管的短路电流放大的频率特性。
具体实施方式
图1a以剖面图示出根据本发明的高频导体1的实施例。高频导体1通过由镍制成的插件2（其限定栅极长度）耦合到AlGaN/GaN-异质结构3作为场效应晶体管的半导通的栅极。该异质结构位于蓝宝石衬底上。出于清楚的原因衬底以及晶体管的源区和漏区包括接触在内都未绘出。高频导体1的基础材料金分成两个节段1a和1b，两个节段通过由镍制成的插件1c电和机械彼此相连。电流（其对栅极输送电荷或者将电荷从栅极引离）垂直于标记平面流动。由于趋肤效应两个节段1a和1b的仅表面附近的阴影部分有助于通过高频导体1的电流传输。通过传导不好的插件的电流传输1c和2在图1中出于清楚原因而忽略。
图1b为了比较以剖面图示出根据目前现有技术的高频导体1，其与根据图1a的实施例包含相同数量的基础材料。这里省略将基础材料分成两个节段。因此不考虑节段1a的下边缘和节段1b的上边缘作为有助于电流传输的表面附近的区域。因此仅小得多的部分的昂贵的基础材料用于电流传输。
在图2中对于根据图1a(实线)和图1b(虚线)的高频导体在高频导体中可达到的电流密度j的频率特性在频率f上双倍对数地描绘。对于从大约2*1010Hz起的频率在同样使用基础材料的情况下示出电流密度的较大增益。
图3示出根据本发明的制造方法的实施例，用该制造方法制造在图1a中示出的高频导体。首先在市场上可买到的，在蓝宝石-衬底上生长的AlGaN/GaN异质结构3上生长分别具有200nm的厚度的由镍和金组成的交替的层(图3a)。异质结构由3μm厚的未掺杂的GaN-缓冲层组成，在所述GaN-缓冲层上存在30nm厚的AlGaN-障碍。AlN在该障碍的摩尔物质量具有26%的份额。在生长之后层堆暴露于用水稀释的盐酸(HCl:H2O1:100)，该盐酸分别从右和左侵蚀镍层(图3b)。在侵蚀之后层堆在去离子化的水中冲洗10分钟，以便停止镍层的进一步分解。AFM-测量示出，通过侵蚀平均(rms)粗糙度没有通过侵蚀提高。
紧贴在异质结构3上残留镍-插件2，镍-插件2限定“高电子移动性晶体管”(HEMT)的栅极长度。第二镍-插件1c连接基础材料金的两个节段1a和1b。
图4a以截面（二级T栅极）示出以这种方式制造的根据本发明的高频导体的光栅电子显微摄像，其对应于根据图1a的示意图。图4b为了比较以截面示出根据现有技术的常规T-栅极结构(一级T栅极)的示例的光栅电子显微摄像，其对应于根据图1b的示意图。
图5示出分别在频率f上标绘的具有根据现有技术的常规T-栅极的晶体管(图1b;细点线)和具有根据本发明的二级T栅极的晶体管(图1a;厚实线)的短路电流放大g的频率特性。两个晶体管在其他情况下相同结构化。具有根据本发明的高频导体作为栅极的晶体管的优点在高频率的情况下可见。因此根据本发明的高频导体赋予晶体管较高极限频率fmax(最高频率，其在没有减弱的情况下传输)。

Claims (11)

1.高频导体，包括至少一种导电的基础材料，其中，所述基础材料的可由电流穿透的外表面和内表面与所述基础材料的总体积的比例通过将所述基础材料垂直于电流方向划分成至少两个节段来相比于所述基础材料的其中省略该划分的成型而提高，所述至少两个节段通过导电的插件分隔并且彼此电气和机械地相连，
其特征在于，
-所述插件由以下材料组成：所述材料可由腐蚀剂侵蚀，相对于所述腐蚀剂所述基础材料是耐久的，以及
-至少一个节段在每个垂直于电流方向的方向上具有在最大运行频率的情况下两倍的基础材料趋肤深度和在最低运行频率的情况下2.5倍的基础材料趋肤深度之间的延展。
2.如权利要求1所述的高频导体，其特征在于，所述插件的材料是来自第3或第4主族的金属或过渡金属，或所述插件的材料包含来自第3或第4主族的至少一种金属或过渡金属作为合金元素。
3.如权利要求2所述的高频导体，其特征在于，所述插件的材料属于组Ti，V，Cr，Mn，Fe，Co，Ni，Cu，Zn或包含来自这个组的至少一种金属作为合金元素。
4.如权利要求1-3中任一项所述的高频导体，其特征在于，所述基础材料是碳或贵金属或次贵金属或它包含来自碳、贵金属和次贵金属构成的组的至少一种材料作为合金元素。
5.如权利要求1-3中任一项所述的高频导体，其特征在于，基础材料属于组Ru，Rh，Pd，Ag，Os，Ir，Pt，Au或包含来自这个组Ru，Rh，Pd，Ag，Os，Ir，Pt，Au的至少一种金属作为合金元素。
6.如权利要求1-3中任一项所述的高频导体，其特征在于，它构造作为晶体管的控制电极。
7.如权利要求6所述的高频导体，其特征在于，它构造作为场效应晶体管的栅电极。
8.如权利要求7所述的高频导体，其特征在于，它通过导电插件耦合到所述场效应晶体管的半导通的栅极，所述导电插件限定栅极长度。
9.如权利要求1-3中任一项所述的高频导体，其特征在于，它构造作为光探测器的聚集电极或引出电极。
10.一种用于制造如权利要求1到9之一的高频导体的方法，其特征在于，在衬底上交替的层由插件的材料和由基础材料生长并且层堆接着暴露于腐蚀剂，所述腐蚀剂各向同性地腐蚀所述插件的材料并且同时既不侵蚀所述衬底又不侵蚀所述基础材料。
11.如权利要求10所述的方法，其特征在于，选择可稀释的腐蚀剂。
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