JP5285348B2 - 回路装置 - Google Patents
回路装置 Download PDFInfo
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- JP5285348B2 JP5285348B2 JP2008195783A JP2008195783A JP5285348B2 JP 5285348 B2 JP5285348 B2 JP 5285348B2 JP 2008195783 A JP2008195783 A JP 2008195783A JP 2008195783 A JP2008195783 A JP 2008195783A JP 5285348 B2 JP5285348 B2 JP 5285348B2
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- conductive pattern
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Landscapes
- Inverter Devices (AREA)
Description
12 回路基板
14,14A,14B、14C、14D、14E、14F、14G リード
16 導電プレート
18 第1パワー素子
20 第2パワー素子
22 制御素子
24 チップ素子
26、26A、26B、26C、26D、26E、26F、26G 導電パターン
28 絶縁層
30 封止樹脂
32 接合材
34 整流回路
36 インバータ回路
Claims (5)
- 回路基板と、
前記回路基板の上面に形成された導電パターンと、
前記導電パターンと電気的に接続されたパワー素子と、
前記導電パターンを経由して前記パワー素子と接続されて入出力端子として機能するリードと、を備え、
前記パワー素子と接続される経路の一部分は、前記導電パターンよりも厚い導電プレートから構成され、
前記リードは、前記回路基板の一側辺に沿って複数個が配置され、
前記パワー素子には、第1パワー素子と、前記第1パワー素子よりも前記リードに接近して配置された第2パワー素子とが含まれ、
前記第1パワー素子は、前記導電プレートおよび前記導電パターンを経由して前記リードと接続され、
前記第2パワー素子は、前記導電プレートを経由せずに前記導電パターンを経由して前記リードと接続されることを特徴とする回路装置。 - 前記第1パワー素子と前記リードとを接続する経路に於いて、前記導電プレートが配置される領域では、前記導電パターンは分断されることを特徴とする請求項1に記載の回路装置。
- 前記回路基板には、前記パワー素子を含むインバータ回路が組み込まれ、
前記パワー素子には、前記インバータ回路のハイサイド側の3つのトランジスタと、ローサイド側の3つのトランジスタとが含まれ、
前記第1パワー素子は、前記インバータ回路を構成する前記トランジスタのいずれかであることを特徴とする請求項1または請求項2に記載の回路装置。 - 前記導電プレートの断面形状は四角形形状であることを特徴とする請求項1から請求項3の何れかに記載の回路装置。
- 前記導電プレートの断面形状は、異形形状であることを特徴とする請求項1から請求項3の何れかに記載の回路装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008195783A JP5285348B2 (ja) | 2008-07-30 | 2008-07-30 | 回路装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008195783A JP5285348B2 (ja) | 2008-07-30 | 2008-07-30 | 回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010034347A JP2010034347A (ja) | 2010-02-12 |
JP5285348B2 true JP5285348B2 (ja) | 2013-09-11 |
Family
ID=41738473
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008195783A Active JP5285348B2 (ja) | 2008-07-30 | 2008-07-30 | 回路装置 |
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JP (1) | JP5285348B2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5626087B2 (ja) * | 2011-04-13 | 2014-11-19 | 三菱電機株式会社 | 半導体装置 |
JP5909396B2 (ja) * | 2012-03-26 | 2016-04-26 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 回路装置 |
JP2013258387A (ja) * | 2012-05-15 | 2013-12-26 | Rohm Co Ltd | パワーモジュール半導体装置 |
CN103918067B (zh) * | 2012-05-29 | 2017-03-01 | 日本精工株式会社 | 半导体模块及其制造方法 |
WO2013179547A1 (ja) * | 2012-06-01 | 2013-12-05 | パナソニック株式会社 | パワー半導体装置 |
DE102013006624B3 (de) | 2013-04-18 | 2014-05-28 | Forschungszentrum Jülich GmbH | Hochfrequenzleiter mit verbesserter Leitfähigkeit und Verfahren seiner Herstellung |
WO2017154199A1 (ja) * | 2016-03-11 | 2017-09-14 | 新電元工業株式会社 | 半導体装置及びリードフレーム |
US11107761B2 (en) * | 2018-02-06 | 2021-08-31 | Denso Corporation | Semiconductor device |
JP2019186403A (ja) | 2018-04-11 | 2019-10-24 | トヨタ自動車株式会社 | 半導体装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0748540B2 (ja) * | 1990-03-29 | 1995-05-24 | 三洋電機株式会社 | 混成集積回路装置 |
JP2004221460A (ja) * | 2003-01-17 | 2004-08-05 | Matsushita Electric Ind Co Ltd | 半導体部品、半導体装置、及び該半導体装置の製造方法 |
JP2005174955A (ja) * | 2003-12-05 | 2005-06-30 | Toyota Industries Corp | 半導体モジュール |
JP5181415B2 (ja) * | 2005-09-30 | 2013-04-10 | 富士通株式会社 | 電気部品の電源ピンへの給電装置 |
JP5341339B2 (ja) * | 2006-10-31 | 2013-11-13 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 回路装置 |
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- 2008-07-30 JP JP2008195783A patent/JP5285348B2/ja active Active
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JP2010034347A (ja) | 2010-02-12 |
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