JP2008187173A - Iii族窒化物パワー半導体デバイス - Google Patents
Iii族窒化物パワー半導体デバイス Download PDFInfo
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- JP2008187173A JP2008187173A JP2008011038A JP2008011038A JP2008187173A JP 2008187173 A JP2008187173 A JP 2008187173A JP 2008011038 A JP2008011038 A JP 2008011038A JP 2008011038 A JP2008011038 A JP 2008011038A JP 2008187173 A JP2008187173 A JP 2008187173A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 82
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims description 13
- 230000007704 transition Effects 0.000 claims description 9
- 239000012212 insulator Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 229910002704 AlGaN Inorganic materials 0.000 claims description 3
- 230000007547 defect Effects 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- -1 Si 3 N 4 Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7789—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface the two-dimensional charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
Abstract
【解決手段】 III族窒化物半導体デバイスに、凹部の側壁に沿うノーマリーオフチャネルを設ける。
【選択図】 図1
Description
12 遷移層
14 第1半導体層
16 第2半導体層
18 凹部
20 ヘテロ接合部
22 第1ヘテロ接合体
24 第2ヘテロ接合体
26 ゲート構造
28 ドレイン電極
30 ソース電極
32 ゲート絶縁層
34 ゲート電極
36 ゲート絶縁体
Claims (13)
- III族窒化物よりなるN型の第1半導体層、この第1半導体層の上に形成され、III族窒化物よりなるP型の第2半導体層、及びこの第2半導体層を貫通し、前記第1半導体層で終わる凹部を備える半導体本体と、
前記凹部の側壁に沿って、少なくとも前記第2半導体層から前記第1半導体層まで延び、第1のバンドギャップを有するIII族窒化物の第1へテロ接合体、及びこの第1物質の上に形成され、第2のバンドギャップを有するIII族窒化物の第2へテロ接合体を備えるIII族窒化物活性ヘテロ接合部と、
前記ヘテロ接合部に電気的に接続され、前記第2半導体層上に少なくとも部分的に配置された第1パワー電極と、
前記ヘテロ接合部に電気的に接続され、前記第1半導体層上に配置された第2パワー電極と、
前記第1パワー電極と前記第2パワー電極の間において、前記ヘテロ接合部に接続された制御電極とを備えるパワー半導体デバイス。 - 制御電極が、絶縁体を介してヘテロ接合部に容量結合されている請求項1記載のパワー半導体デバイス。
- 制御電極が、少なくとも凹部の側壁に沿って配置されている請求項1記載のパワー半導体デバイス。
- 第1パワー電極が、第2半導体層とオーミック接触している請求項1記載のパワー半導体デバイス。
- 半導体本体が、基板上に積層されるIII族窒化物の遷移層上に形成されている請求項1記載のパワー半導体デバイス。
- 遷移層がAlNよりなり、第1半導体層がN型GaNよりなり、第2半導体層がP型GaNよりなっている請求項5記載のパワー半導体デバイス。
- 基板がケイ素よりなっている請求項6記載のパワー半導体デバイス。
- 基板がGaNよりなっている請求項6記載のパワー半導体デバイス。
- 基板がSiCよりなっている請求項6記載のパワー半導体デバイス。
- 基板がサファイアよりなっている請求項6記載のパワー半導体デバイス。
- 第1ヘテロ接合体が、GaNよりなり、第2へテロ接合体がAlGaNよりなっている請求項1記載のパワー半導体デバイス。
- 第2半導体層が成長する請求項1記載のパワー半導体デバイス。
- 第2半導体層が、ドーピングに起因するN型欠陥を生じさせない請求項1記載のパワー半導体デバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/698,371 US7821032B2 (en) | 2007-01-26 | 2007-01-26 | III-nitride power semiconductor device |
US11/698,371 | 2007-01-26 |
Publications (2)
Publication Number | Publication Date |
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JP2008187173A true JP2008187173A (ja) | 2008-08-14 |
JP5203725B2 JP5203725B2 (ja) | 2013-06-05 |
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JP2008011038A Active JP5203725B2 (ja) | 2007-01-26 | 2008-01-22 | Iii族窒化物パワー半導体デバイス |
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Country | Link |
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US (1) | US7821032B2 (ja) |
JP (1) | JP5203725B2 (ja) |
CN (1) | CN101232046B (ja) |
Families Citing this family (14)
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JP5332113B2 (ja) | 2007-02-15 | 2013-11-06 | 富士通株式会社 | 半導体装置及びその製造方法 |
US8026581B2 (en) * | 2008-02-05 | 2011-09-27 | International Rectifier Corporation | Gallium nitride material devices including diamond regions and methods associated with the same |
CN103620751B (zh) * | 2011-07-12 | 2017-08-01 | 松下知识产权经营株式会社 | 氮化物半导体装置及其制造方法 |
US9087812B2 (en) * | 2011-07-15 | 2015-07-21 | International Rectifier Corporation | Composite semiconductor device with integrated diode |
CN102299176B (zh) * | 2011-08-30 | 2013-04-03 | 电子科技大学 | 一种铁电薄膜栅增强型GaN异质结场效应晶体管 |
US8772786B2 (en) | 2012-07-13 | 2014-07-08 | Raytheon Company | Gallium nitride devices having low ohmic contact resistance |
JP6200227B2 (ja) * | 2013-02-25 | 2017-09-20 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US10312360B2 (en) * | 2013-06-18 | 2019-06-04 | Stephen P. Barlow | Method for producing trench high electron mobility devices |
US9202888B2 (en) * | 2013-06-18 | 2015-12-01 | Stephen P. Barlow | Trench high electron mobility transistor device |
US9728630B2 (en) * | 2014-09-05 | 2017-08-08 | Infineon Technologies Austria Ag | High-electron-mobility transistor having a buried field plate |
EP3688813A4 (en) * | 2017-09-28 | 2021-06-23 | INTEL Corporation | MONOLITHIC INTEGRATION OF A THIN FILM TRANSISTOR ON A COMPLEMENTARY TRANSISTOR |
JP7017579B2 (ja) * | 2017-11-16 | 2022-02-08 | パナソニック株式会社 | 窒化物半導体装置 |
CN112397586B (zh) * | 2020-11-23 | 2022-06-21 | 江苏大学 | 一种常开型硅衬底高电子迁移率晶体管及其制造方法 |
CN114503282B (zh) * | 2021-12-31 | 2024-01-02 | 英诺赛科(苏州)科技有限公司 | 氮化物基半导体装置及其制造方法 |
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JP2001291869A (ja) * | 2000-04-06 | 2001-10-19 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP2004260140A (ja) * | 2003-02-06 | 2004-09-16 | Toyota Central Res & Dev Lab Inc | Iii族窒化物半導体を有する半導体素子 |
JP2006100820A (ja) * | 2004-09-24 | 2006-04-13 | Internatl Rectifier Corp | パワー半導体デバイス |
JP2006278857A (ja) * | 2005-03-30 | 2006-10-12 | Ngk Insulators Ltd | 半導体積層構造、半導体素子及び当該半導体素子を用いた装置 |
JP2006286942A (ja) * | 2005-03-31 | 2006-10-19 | Eudyna Devices Inc | 半導体装置及びその製造方法 |
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JP2778447B2 (ja) | 1994-02-18 | 1998-07-23 | 日本電気株式会社 | トンネルトランジスタおよびその製造方法 |
DE102004058431B4 (de) * | 2003-12-05 | 2021-02-18 | Infineon Technologies Americas Corp. | III-Nitrid Halbleitervorrichtung mit Grabenstruktur |
JP4041075B2 (ja) * | 2004-02-27 | 2008-01-30 | 株式会社東芝 | 半導体装置 |
US7084441B2 (en) * | 2004-05-20 | 2006-08-01 | Cree, Inc. | Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same |
US7521732B2 (en) * | 2005-11-18 | 2009-04-21 | General Electric Company | Vertical heterostructure field effect transistor and associated method |
US7821034B2 (en) * | 2006-01-09 | 2010-10-26 | International Rectifier Corporation | Integrated III-nitride devices |
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2007
- 2007-01-26 US US11/698,371 patent/US7821032B2/en active Active
- 2007-11-16 CN CN2007101883026A patent/CN101232046B/zh active Active
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- 2008-01-22 JP JP2008011038A patent/JP5203725B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001291869A (ja) * | 2000-04-06 | 2001-10-19 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP2004260140A (ja) * | 2003-02-06 | 2004-09-16 | Toyota Central Res & Dev Lab Inc | Iii族窒化物半導体を有する半導体素子 |
JP2006100820A (ja) * | 2004-09-24 | 2006-04-13 | Internatl Rectifier Corp | パワー半導体デバイス |
JP2006278857A (ja) * | 2005-03-30 | 2006-10-12 | Ngk Insulators Ltd | 半導体積層構造、半導体素子及び当該半導体素子を用いた装置 |
JP2006286942A (ja) * | 2005-03-31 | 2006-10-19 | Eudyna Devices Inc | 半導体装置及びその製造方法 |
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Publication number | Publication date |
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CN101232046A (zh) | 2008-07-30 |
JP5203725B2 (ja) | 2013-06-05 |
CN101232046B (zh) | 2011-11-16 |
US7821032B2 (en) | 2010-10-26 |
US20080179631A1 (en) | 2008-07-31 |
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