CN105493208B - 具有变化厚度的电感器 - Google Patents

具有变化厚度的电感器 Download PDF

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Publication number
CN105493208B
CN105493208B CN201480047926.4A CN201480047926A CN105493208B CN 105493208 B CN105493208 B CN 105493208B CN 201480047926 A CN201480047926 A CN 201480047926A CN 105493208 B CN105493208 B CN 105493208B
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Prior art keywords
spiral
conductive
thickness
substrate
inductor
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Chinese (zh)
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CN105493208A (zh
Inventor
D·D·金
C·左
C·H·尹
M·F·维纶茨
R·P·米库尔卡
X·张
J·金
J-H·兰
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Qualcomm Inc
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Qualcomm Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/041—Printed circuit coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F17/0013—Printed inductances with stacked layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/2804—Printed windings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/041—Printed circuit coils
    • H01F41/042—Printed circuit coils by thin film techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F2017/0053—Printed inductances with means to reduce eddy currents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F2017/0073—Printed inductances with a special conductive pattern, e.g. flat spiral
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/2804—Printed windings
    • H01F2027/2809—Printed windings on stacked layers

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Manufacturing Cores, Coils, And Magnets (AREA)
CN201480047926.4A 2013-08-30 2014-07-29 具有变化厚度的电感器 Active CN105493208B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361872342P 2013-08-30 2013-08-30
US61/872,342 2013-08-30
US14/155,244 US9449753B2 (en) 2013-08-30 2014-01-14 Varying thickness inductor
US14/155,244 2014-01-14
PCT/US2014/048723 WO2015030976A1 (en) 2013-08-30 2014-07-29 Varying thickness inductor

Publications (2)

Publication Number Publication Date
CN105493208A CN105493208A (zh) 2016-04-13
CN105493208B true CN105493208B (zh) 2020-06-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480047926.4A Active CN105493208B (zh) 2013-08-30 2014-07-29 具有变化厚度的电感器

Country Status (5)

Country Link
US (2) US9449753B2 (enExample)
EP (1) EP3039693B1 (enExample)
JP (1) JP2016529732A (enExample)
CN (1) CN105493208B (enExample)
WO (1) WO2015030976A1 (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9659246B1 (en) 2012-11-05 2017-05-23 Dynamics Inc. Dynamic magnetic stripe communications device with beveled magnetic material for magnetic cards and devices
US9431473B2 (en) 2012-11-21 2016-08-30 Qualcomm Incorporated Hybrid transformer structure on semiconductor devices
US9010644B1 (en) 2012-11-30 2015-04-21 Dynamics Inc. Dynamic magnetic stripe communications device with stepped magnetic material for magnetic cards and devices
US10002700B2 (en) 2013-02-27 2018-06-19 Qualcomm Incorporated Vertical-coupling transformer with an air-gap structure
US9634645B2 (en) 2013-03-14 2017-04-25 Qualcomm Incorporated Integration of a replica circuit and a transformer above a dielectric substrate
US9449753B2 (en) 2013-08-30 2016-09-20 Qualcomm Incorporated Varying thickness inductor
JP6221736B2 (ja) * 2013-12-25 2017-11-01 三菱電機株式会社 半導体装置
US9906318B2 (en) 2014-04-18 2018-02-27 Qualcomm Incorporated Frequency multiplexer
EP3920200A1 (en) 2014-05-05 2021-12-08 3D Glass Solutions, Inc. 2d and 3d inductors antenna and transformers fabricating photoactive substrates
GB2531350B (en) * 2014-10-17 2019-05-15 Murata Manufacturing Co High leakage inductance embedded isolation transformer device and method of making the same
US10483035B2 (en) * 2015-09-21 2019-11-19 Qorvo Us, Inc. Substrates with integrated three dimensional solenoid inductors
US11024454B2 (en) * 2015-10-16 2021-06-01 Qualcomm Incorporated High performance inductors
KR20180134868A (ko) 2016-02-25 2018-12-19 3디 글래스 솔루션즈 인코포레이티드 3d 커패시터 및 커패시터 어레이 제작용 광활성 기재
US12165809B2 (en) 2016-02-25 2024-12-10 3D Glass Solutions, Inc. 3D capacitor and capacitor array fabricating photoactive substrates
US11161773B2 (en) 2016-04-08 2021-11-02 3D Glass Solutions, Inc. Methods of fabricating photosensitive substrates suitable for optical coupler
KR101832614B1 (ko) * 2016-07-14 2018-02-26 삼성전기주식회사 코일 부품 및 그 제조방법
CN106449441B (zh) * 2016-10-26 2019-02-12 中颖电子股份有限公司 一种改进的数字隔离器线圈及其制作方法
US10553353B2 (en) * 2016-11-18 2020-02-04 Globalfoundries Inc. Parallel stacked inductor for high-Q and high current handling and method of making the same
WO2018200804A1 (en) 2017-04-28 2018-11-01 3D Glass Solutions, Inc. Rf circulator
US10483343B2 (en) * 2017-06-16 2019-11-19 Huawei Technologies Co., Ltd. Inductors for chip to chip near field communication
JP6995891B2 (ja) 2017-07-07 2022-01-17 スリーディー グラス ソリューションズ，インク パッケージ光活性ガラス基板内のｒｆシステムのための２ｄ及び３ｄのｒｆ集中素子デバイス
KR101994757B1 (ko) * 2017-09-29 2019-07-01 삼성전기주식회사 박막형 인덕터
US10854946B2 (en) 2017-12-15 2020-12-01 3D Glass Solutions, Inc. Coupled transmission line resonate RF filter
WO2019136024A1 (en) 2018-01-04 2019-07-11 3D Glass Solutions, Inc. Impedance matching conductive structure for high efficiency rf circuits
KR102069632B1 (ko) * 2018-02-22 2020-01-23 삼성전기주식회사 인덕터
KR102626372B1 (ko) 2018-04-10 2024-01-16 3디 글래스 솔루션즈 인코포레이티드 Rf 집적형 전력 조절 커패시터
KR20200052359A (ko) * 2018-04-13 2020-05-14 안휘 윈타 일렉트로닉 테크놀로지스 컴퍼니 리미티드 인덕터 스택 구조
JP6976409B2 (ja) 2018-05-29 2021-12-08 スリーディー グラス ソリューションズ, インク3D Glass Solutions, Inc 低挿入損失ｒｆ伝送線路
CA3112608C (en) 2018-09-17 2021-12-28 3D Glass Solutions, Inc. High efficiency compact slotted antenna with a ground plane
CA3107812C (en) 2018-12-28 2023-06-27 3D Glass Solutions, Inc. Annular capacitor rf, microwave and mm wave systems
KR102393450B1 (ko) 2018-12-28 2022-05-04 3디 글래스 솔루션즈 인코포레이티드 광활성 유리 기판들에서 ｒｆ, 마이크로파, 및 ｍｍ 파 시스템들을 위한 이종 통합
US11962057B2 (en) 2019-04-05 2024-04-16 3D Glass Solutions, Inc. Glass based empty substrate integrated waveguide devices
JP7188825B2 (ja) 2019-04-18 2022-12-13 スリーディー グラス ソリューションズ，インク 高効率ダイダイシング及びリリース
EP4121988A4 (en) 2020-04-17 2023-08-30 3D Glass Solutions, Inc. BROADBAND INDUCTOR

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1628360A (zh) * 2002-06-04 2005-06-15 Bi科技有限公司 屏蔽电感器
CN102231313A (zh) * 2009-12-08 2011-11-02 上海华虹Nec电子有限公司 利用金属并联的多层堆叠电感

Family Cites Families (185)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3798059A (en) 1970-04-20 1974-03-19 Rca Corp Thick film inductor with ferromagnetic core
US4815128A (en) 1986-07-03 1989-03-21 Motorola, Inc. Gateway system and method for interconnecting telephone calls with a digital voice protected radio network
US4841253A (en) 1987-04-15 1989-06-20 Harris Corporation Multiple spiral inductors for DC biasing of an amplifier
US4816784A (en) 1988-01-19 1989-03-28 Northern Telecom Limited Balanced planar transformers
US5111169A (en) * 1989-03-23 1992-05-05 Takeshi Ikeda Lc noise filter
US5015972A (en) 1989-08-17 1991-05-14 Motorola, Inc. Broadband RF transformer
JPH0377360A (ja) 1989-08-18 1991-04-02 Mitsubishi Electric Corp 半導体装置
US5038104A (en) 1990-02-05 1991-08-06 Vanderbilt University Magnetometer flux pick-up coil with non-uniform interturn spacing optimized for spatial resolution
FR2662869B1 (fr) 1990-06-01 1995-06-16 Europ Agence Spatiale Procede de limitation d'une surcharge base sur la technique de controle pwm (ou lc3) et dispositif electronique de mise en óoeuvre de ce procede.
JPH0484501A (ja) 1990-07-27 1992-03-17 Oki Electric Ind Co Ltd 分波器
ATE269588T1 (de) 1993-02-04 2004-07-15 Cornell Res Foundation Inc Mikrostrukturen und einzelmask, einkristall- herstellungsverfahren
JP3319879B2 (ja) 1994-07-19 2002-09-03 三菱電機株式会社 半導体装置
JPH08148354A (ja) 1994-11-18 1996-06-07 Taiyo Yuden Co Ltd 積層コモンモードチョークコイル
TW362222B (en) 1995-11-27 1999-06-21 Matsushita Electric Industrial Co Ltd Coiled component and its production method
JPH1050522A (ja) * 1996-07-31 1998-02-20 Matsushita Electric Works Ltd 平面コイル
JPH10144552A (ja) * 1996-11-07 1998-05-29 Sony Corp 薄膜導電パターンの形成方法およびこれを用いた薄膜インダクタ
US5831331A (en) 1996-11-22 1998-11-03 Philips Electronics North America Corporation Self-shielding inductor for multi-layer semiconductor integrated circuits
JP4030028B2 (ja) 1996-12-26 2008-01-09 シチズン電子株式会社 Ｓｍｄ型回路装置及びその製造方法
US5969582A (en) 1997-07-03 1999-10-19 Ericsson Inc. Impedance matching circuit for power amplifier
EP0915513A1 (en) 1997-10-23 1999-05-12 STMicroelectronics S.r.l. High quality factor, integrated inductor and production method thereof
US6025261A (en) 1998-04-29 2000-02-15 Micron Technology, Inc. Method for making high-Q inductive elements
US5986617A (en) 1998-08-31 1999-11-16 Lucent Technologies Multiband antenna matching unit
JP2000114046A (ja) 1998-10-05 2000-04-21 Alps Electric Co Ltd 薄膜トランス
US6985035B1 (en) 1998-11-12 2006-01-10 Broadcom Corporation System and method for linearizing a CMOS differential pair
JP3571247B2 (ja) 1999-03-31 2004-09-29 太陽誘電株式会社 積層電子部品
JP3776281B2 (ja) 1999-04-13 2006-05-17 アルプス電気株式会社 インダクティブ素子
US6466768B1 (en) 1999-06-11 2002-10-15 Conexant Systems, Inc. Multi-band filter system for wireless communication receiver
JP2001085230A (ja) 1999-09-14 2001-03-30 Murata Mfg Co Ltd インダクタ
AU2750401A (en) 1999-11-03 2001-05-30 R. Jennifer Hwu Vertical transformer
US6429763B1 (en) 2000-02-01 2002-08-06 Compaq Information Technologies Group, L.P. Apparatus and method for PCB winding planar magnetic devices
US7370403B1 (en) 2000-06-06 2008-05-13 Taiwan Semiconductor Manufacturing Co., Ltd. Method of fabricating a planar spiral inductor structure having an enhanced Q value
US7606547B1 (en) 2000-07-31 2009-10-20 Marvell International Ltd. Active resistance summer for a transformer hybrid
JP4051878B2 (ja) 2000-11-08 2008-02-27 株式会社豊田自動織機 非接触給電装置
SE519893C2 (sv) * 2000-11-09 2003-04-22 Ericsson Telefon Ab L M Induktorstruktur hos integrerad krets samt icke-förstörande mätning av etsningsdjup
US6437965B1 (en) 2000-11-28 2002-08-20 Harris Corporation Electronic device including multiple capacitance value MEMS capacitor and associated methods
SE0004794L (sv) 2000-12-22 2002-06-23 Ericsson Telefon Ab L M En flerskikts-symmetreringstransformatorstruktur
SG142160A1 (en) 2001-03-19 2008-05-28 Semiconductor Energy Lab Method of manufacturing a semiconductor device
KR100368930B1 (ko) 2001-03-29 2003-01-24 한국과학기술원 반도체 기판 위에 높이 떠 있는 3차원 금속 소자, 그 회로모델, 및 그 제조방법
KR100382765B1 (ko) 2001-06-15 2003-05-09 삼성전자주식회사 송수신용 수동소자와 그 집적모듈 및 그 제조방법
US6801114B2 (en) 2002-01-23 2004-10-05 Broadcom Corp. Integrated radio having on-chip transformer balun
US20030151485A1 (en) 2002-02-08 2003-08-14 Charles Lewis Surface mounted inductance element
US6816784B1 (en) 2002-03-08 2004-11-09 Navteq North America, Llc Method and system using delivery trucks to collect address location data
JP2003318417A (ja) 2002-04-19 2003-11-07 Citizen Watch Co Ltd Ｍｏｓ型可変容量および半導体集積回路
US6714112B2 (en) 2002-05-10 2004-03-30 Chartered Semiconductor Manufacturing Limited Silicon-based inductor with varying metal-to-metal conductor spacing
JP3754406B2 (ja) * 2002-09-13 2006-03-15 富士通株式会社 可変インダクタおよびそのインダクタンス調整方法
TWI287239B (en) 2002-12-10 2007-09-21 Univ Nat Central Symmetric three-dimension type inductor
KR20050093808A (ko) * 2002-12-27 2005-09-23 티디케이가부시기가이샤 수지조성물, 수지경화물, 시트형상 수지경화물, 적층체,프리프레그, 전자부품 및 다층기판
JP3800540B2 (ja) 2003-01-31 2006-07-26 Ｔｄｋ株式会社 インダクタンス素子の製造方法と積層電子部品と積層電子部品モジュ−ルとこれらの製造方法
US6952153B2 (en) 2003-02-04 2005-10-04 Raytheon Company Electrical transformer
CN1314056C (zh) * 2003-02-04 2007-05-02 三菱电机株式会社 螺旋形电感器和变压器
JP4448298B2 (ja) 2003-07-14 2010-04-07 アルプス電気株式会社 スパイラルインダクタ
US6990729B2 (en) 2003-09-05 2006-01-31 Harris Corporation Method for forming an inductor
JP2005124126A (ja) 2003-09-24 2005-05-12 Seiko Epson Corp インピーダンス回路網、これを用いたフィルタ回路、増幅回路、半導体集積回路、電子機器及び無線通信装置
US20050104158A1 (en) 2003-11-19 2005-05-19 Scintera Networks, Inc. Compact, high q inductor for integrated circuit
JP2005223261A (ja) 2004-02-09 2005-08-18 Mitsubishi Materials Corp 積層型コモンモードチョークコイル及びその製造方法
EP1729413B1 (en) 2004-03-16 2015-12-09 Hitachi Metals, Ltd. High-frequency circuit and high-frequency component
US8049669B2 (en) 2004-03-26 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising circuit between first and second conducting wires
JP4012526B2 (ja) * 2004-07-01 2007-11-21 Ｔｄｋ株式会社 薄膜コイルおよびその製造方法、ならびにコイル構造体およびその製造方法
KR100548388B1 (ko) 2004-07-20 2006-02-02 삼성전자주식회사 저손실 인덕터소자 및 그의 제조방법
JP2006054116A (ja) 2004-08-12 2006-02-23 Tyco Electronics Amp Kk コンプライアントピンおよびコンプライアントピンを使用した電気コネクタ
US7808356B2 (en) 2004-08-31 2010-10-05 Theta Microelectronics, Inc. Integrated high frequency BALUN and inductors
EP1696368B1 (en) 2005-02-28 2011-11-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US7526256B2 (en) 2005-05-25 2009-04-28 Broadcom Corporation Transformer-based multi-band RF front-end architecture
EP4040474A1 (en) 2005-06-02 2022-08-10 The Board of Trustees of the University of Illinois Printable semiconductor structures and related methods of making and assembling
TWI280593B (en) 2005-06-16 2007-05-01 Via Tech Inc Inductor
EP1904398A2 (en) 2005-06-30 2008-04-02 Philips Intellectual Property & Standards GmbH A method of manufacturing a mems element
JP4764668B2 (ja) 2005-07-05 2011-09-07 セイコーエプソン株式会社 電子基板の製造方法および電子基板
US7427907B2 (en) 2005-07-21 2008-09-23 Telegent Systems, Inc. Boosted-bias tunable filter with dynamic calibration
US7280810B2 (en) 2005-08-03 2007-10-09 Kamilo Feher Multimode communication system
US8325001B2 (en) 2005-08-04 2012-12-04 The Regents Of The University Of California Interleaved three-dimensional on-chip differential inductors and transformers
US7570129B2 (en) 2005-09-02 2009-08-04 Northrop Grumman Corporation 3D MMIC balun and methods of making the same
JP2007150022A (ja) 2005-11-29 2007-06-14 Seiko Epson Corp 電子基板、その製造方法および電子機器
KR100760915B1 (ko) 2005-12-29 2007-09-21 동부일렉트로닉스 주식회사 반도체 소자의 인덕터 구조 및 그 제조 방법
US7411283B2 (en) 2006-02-14 2008-08-12 Sun Microsystems, Inc. Interconnect design for reducing radiated emissions
JP4431121B2 (ja) * 2006-03-31 2010-03-10 株式会社モステック 線材の製造方法、及び線材の製造装置
US20070249078A1 (en) 2006-04-19 2007-10-25 Ming-Hau Tung Non-planar surface structures and process for microelectromechanical systems
JP2008042609A (ja) 2006-08-08 2008-02-21 Toshiba Corp 分波器および無線受信機
TWI315580B (en) 2006-09-11 2009-10-01 Via Tech Inc Symmetrical inductor
US20080076354A1 (en) 2006-09-26 2008-03-27 Broadcom Corporation, A California Corporation Cable modem with programmable antenna and methods for use therewith
US7524731B2 (en) 2006-09-29 2009-04-28 Freescale Semiconductor, Inc. Process of forming an electronic device including an inductor
US7616934B2 (en) 2006-12-11 2009-11-10 Sige Semiconductor (Europe) Limited Switched impedance transformer for semiconductor circuits
KR100869741B1 (ko) * 2006-12-29 2008-11-21 동부일렉트로닉스 주식회사 나선형 인덕터
US7675365B2 (en) 2007-01-10 2010-03-09 Samsung Electro-Mechanics Systems and methods for power amplifiers with voltage boosting multi-primary transformers
TWI336922B (en) 2007-01-12 2011-02-01 Via Tech Inc Spiral inductor with multi-trace structure
US7304558B1 (en) 2007-01-18 2007-12-04 Harris Corporation Toroidal inductor design for improved Q
US20080174397A1 (en) * 2007-01-19 2008-07-24 General Electric Company High quality factor, low volume, air-core inductor
JP2008182340A (ja) 2007-01-23 2008-08-07 Ngk Spark Plug Co Ltd ダイプレクサ及びそれを用いたマルチプレクサ
KR100886351B1 (ko) 2007-01-24 2009-03-03 삼성전자주식회사 변압기 및 밸룬
US7894205B2 (en) 2007-04-05 2011-02-22 Mitsubishi Electric Corporation Variable device circuit and method for manufacturing the same
US7935607B2 (en) 2007-04-09 2011-05-03 Freescale Semiconductor, Inc. Integrated passive device with a high resistivity substrate and method for forming the same
US8224400B2 (en) 2007-05-31 2012-07-17 Hewlett-Packard Development Company, L.P. Systems and techniques for reducing power consumption in a mobile computing device
KR100862489B1 (ko) 2007-06-11 2008-10-08 삼성전기주식회사 스파이럴 인덕터
US7566627B2 (en) 2007-06-29 2009-07-28 Texas Instruments Incorporated Air gap in integrated circuit inductor fabrication
JP2009038297A (ja) 2007-08-03 2009-02-19 Asahi Kasei Electronics Co Ltd 半導体装置
JP4953132B2 (ja) 2007-09-13 2012-06-13 日本電気株式会社 半導体装置
JP2009088161A (ja) * 2007-09-28 2009-04-23 Fujitsu Media Device Kk 電子部品
TW200926218A (en) 2007-12-10 2009-06-16 Ind Tech Res Inst Planar-like inductor coupling structure
CN201156721Y (zh) 2008-02-19 2008-11-26 佳邦科技股份有限公司 具有中空气隙过电压保护机构的叠层芯片型lc滤波器
US7999250B2 (en) 2008-03-04 2011-08-16 Hvvi Semiconductors, Inc. Silicon-germanium-carbon semiconductor structure
US8072287B2 (en) 2008-03-27 2011-12-06 Broadcom Corporation Method and system for configurable differential or single-ended signaling in an integrated circuit
JP2009246159A (ja) 2008-03-31 2009-10-22 Fuji Electric Device Technology Co Ltd 多出力磁気誘導素子およびそれを備えた多出力超小型電力変換装置
JP2009272360A (ja) 2008-05-01 2009-11-19 Panasonic Corp インダクタおよびその製造方法
US8169050B2 (en) * 2008-06-26 2012-05-01 International Business Machines Corporation BEOL wiring structures that include an on-chip inductor and an on-chip capacitor, and design structures for a radiofrequency integrated circuit
TW201001457A (en) * 2008-06-30 2010-01-01 Delta Electronics Inc Magnetic component
CN102099876A (zh) * 2008-07-15 2011-06-15 株式会社村田制作所 电子元器件
WO2010022107A2 (en) 2008-08-18 2010-02-25 The Regents Of The University Of California Nanostructured superhydrophobic, superoleophobic and/or superomniphobic coatings, methods for fabrication, and applications thereof
TWI360254B (en) 2008-09-10 2012-03-11 Advanced Semiconductor Eng Balun circuit manufactured by integrate passive de
US8049589B2 (en) 2008-09-10 2011-11-01 Advanced Semiconductor Engineering, Inc. Balun circuit manufactured by integrate passive device process
JP2010098199A (ja) 2008-10-18 2010-04-30 Taiyo Yuden Co Ltd インダクタンス素子及びその製造方法
US8183673B2 (en) 2008-10-21 2012-05-22 Samsung Electronics Co., Ltd. Through-silicon via structures providing reduced solder spreading and methods of fabricating the same
US8446243B2 (en) * 2008-10-31 2013-05-21 Infineon Technologies Austria Ag Method of constructing inductors and transformers
WO2010055682A1 (ja) 2008-11-14 2010-05-20 株式会社フジクラ 樹脂多層デバイスおよびその製造方法
US8233870B2 (en) 2008-12-04 2012-07-31 Broadcom Corporation Multiple frequency band multiple standard transceiver
JP2010141246A (ja) 2008-12-15 2010-06-24 Sharp Corp 半導体装置の製造方法
US7821372B2 (en) 2008-12-31 2010-10-26 Taiwan Semiconductor Manufacturing Co., Ltd. On-chip transformer BALUN structures
US9721715B2 (en) 2009-01-22 2017-08-01 2Sentient Inc. Solid state components having an air core
US9190201B2 (en) 2009-03-04 2015-11-17 Qualcomm Incorporated Magnetic film enhanced inductor
JP5252212B2 (ja) 2009-03-12 2013-07-31 ルネサスエレクトロニクス株式会社 信号増幅用半導体装置
US8208867B2 (en) 2009-04-09 2012-06-26 Apple Inc. Shared multiband antennas and antenna diversity circuitry for electronic devices
US8229367B2 (en) 2009-04-14 2012-07-24 Qualcomm, Incorporated Low noise amplifier with combined input matching, balun, and transmit/receive switch
TWI411353B (zh) 2009-04-27 2013-10-01 Delta Electronics Inc 多組直流負載之電流平衡供電電路
KR101215303B1 (ko) 2009-07-21 2012-12-26 한국전자통신연구원 엘티씨씨 인덕터를 포함하는 전자 장치
JP2011029222A (ja) * 2009-07-21 2011-02-10 Murata Mfg Co Ltd 電子部品
US8350639B2 (en) 2009-08-26 2013-01-08 Qualcomm Incorporated Transformer signal coupling for flip-chip integration
WO2011033496A1 (en) * 2009-09-16 2011-03-24 Maradin Technologies Ltd. Micro coil apparatus and manufacturing methods therefor
US9064627B2 (en) 2009-10-12 2015-06-23 St-Ericsson Sa Integrated transformer with multiple transformation ratios
US8368481B2 (en) 2009-10-14 2013-02-05 Microsemi Corporation RF switchable balun
CN102087995A (zh) 2009-12-04 2011-06-08 中芯国际集成电路制造(上海)有限公司 集成电路电感及其制作方法
CN102087911A (zh) * 2009-12-08 2011-06-08 上海华虹Nec电子有限公司 金属厚度不相等的不等宽片上叠层电感
CN102103923A (zh) 2009-12-18 2011-06-22 鸿富锦精密工业（深圳）有限公司 平面变压器
KR101597214B1 (ko) 2010-01-14 2016-02-25 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
US20110217657A1 (en) 2010-02-10 2011-09-08 Life Bioscience, Inc. Methods to fabricate a photoactive substrate suitable for microfabrication
US8068003B2 (en) 2010-03-10 2011-11-29 Altera Corporation Integrated circuits with series-connected inductors
US20110229687A1 (en) 2010-03-19 2011-09-22 Qualcomm Incorporated Through Glass Via Manufacturing Process
US20110234469A1 (en) 2010-03-24 2011-09-29 Sony Ericsson Mobile Communications Japan, Inc. Wireless communication terminal
US8631368B2 (en) 2010-03-30 2014-01-14 Qualcomm Incorporated Method and circuit to generate race condition test data at multiple supply voltages
US8384507B2 (en) 2010-06-01 2013-02-26 Qualcomm Incorporated Through via inductor or transformer in a high-resistance substrate with programmability
US20110299436A1 (en) 2010-06-03 2011-12-08 Broadcom Corporation Front end module with scalable impedance balancing
US8493126B2 (en) 2010-07-15 2013-07-23 Qualcomm Incorporated Wideband balun having a single primary and multiple secondaries
US8591262B2 (en) 2010-09-03 2013-11-26 Pulse Electronics, Inc. Substrate inductive devices and methods
JP2012058274A (ja) 2010-09-03 2012-03-22 Hitachi Displays Ltd 表示装置
WO2012040063A1 (en) 2010-09-23 2012-03-29 Qualcomm Mems Technologies, Inc. Integrated passives and power amplifier
CN102569249B (zh) 2010-12-08 2014-01-22 财团法人工业技术研究院 立体式电感
US8552812B2 (en) 2010-12-09 2013-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. Transformer with bypass capacitor
WO2012077305A1 (ja) 2010-12-10 2012-06-14 パナソニック株式会社 導電路、それを用いた半導体装置及びそれらの製造方法
KR101127478B1 (ko) 2010-12-21 2012-03-22 한국과학기술원 관통 실리콘 비아를 이용한 전류 측정 소자, 이의 제조 방법 및 이를 포함하는 전류 측정 회로
EP2661757A1 (en) 2011-01-04 2013-11-13 ÅAC Microtec AB Coil assembly comprising planar coil
US9105381B2 (en) * 2011-01-24 2015-08-11 International Business Machines Corporation High frequency inductor structure having increased inductance density and quality factor
US8754736B2 (en) 2011-01-24 2014-06-17 International Business Machines Corporation Inductor structure having increased inductance density and quality factor
JP5707988B2 (ja) 2011-02-04 2015-04-30 株式会社村田製作所 コイル内蔵基板およびそれを備えたｄｃ−ｄｃコンバータモジュール
US20120235969A1 (en) 2011-03-15 2012-09-20 Qualcomm Mems Technologies, Inc. Thin film through-glass via and methods for forming same
US20120244802A1 (en) 2011-03-24 2012-09-27 Lei Feng On chip inductor
TWI454052B (zh) 2011-04-01 2014-09-21 Realtek Semiconductor Corp 單端轉雙端電路
US20120249281A1 (en) * 2011-04-04 2012-10-04 General Electric Company Inductor and eddy current sensor including an inductor
US9319036B2 (en) 2011-05-20 2016-04-19 Apple Inc. Gate signal adjustment circuit
US8354325B1 (en) 2011-06-29 2013-01-15 Freescale Semiconductor, Inc. Method for forming a toroidal inductor in a semiconductor substrate
US20130016633A1 (en) 2011-07-14 2013-01-17 Lum Nicholas W Wireless Circuitry for Simultaneously Receiving Radio-frequency Transmissions in Different Frequency Bands
US8737376B2 (en) 2011-08-12 2014-05-27 Telefonaktiebolaget L M Ericsson (Publ) Frontend module for time division duplex (TDD) carrier aggregation
US20130050226A1 (en) 2011-08-30 2013-02-28 Qualcomm Mems Technologies, Inc. Die-cut through-glass via and methods for forming same
JP5719259B2 (ja) 2011-09-06 2015-05-13 ルネサスエレクトロニクス株式会社 高周波電力増幅装置
US20130057557A1 (en) 2011-09-07 2013-03-07 Qualcomm Mems Technologies, Inc. High area stacked layered metallic structures and related methods
US8995934B2 (en) 2011-12-14 2015-03-31 Apple Inc. Wireless communications circuitry with a triplexer for separating radio-frequency signals in adjacent frequency bands
KR101325549B1 (ko) 2011-12-22 2013-11-07 (주)그린파워 전류변압기 기반의 전자기장 차폐장치를 구비한 무선 전력전송 장치
CN102522181B (zh) 2012-01-04 2013-08-14 西安电子科技大学 线宽间距交变结构型平面螺旋电感
US9166640B2 (en) 2012-02-10 2015-10-20 Infineon Technologies Ag Adjustable impedance matching network
US20130207745A1 (en) 2012-02-13 2013-08-15 Qualcomm Incorporated 3d rf l-c filters using through glass vias
US8716871B2 (en) 2012-02-15 2014-05-06 Taiwan Semiconductor Manufacturing Company, Ltd. Big via structure
KR101789836B1 (ko) 2012-02-27 2017-10-25 한국전자통신연구원 누설 에너지 수집 장치
JP5621946B2 (ja) * 2012-02-29 2014-11-12 株式会社村田製作所 積層型インダクタおよび電源回路モジュール
JP5942530B2 (ja) 2012-03-28 2016-06-29 カシオ計算機株式会社 非接触充電システム及び電子機器
US9001031B2 (en) 2012-07-30 2015-04-07 Qualcomm Mems Technologies, Inc. Complex passive design with special via implementation
US9431473B2 (en) 2012-11-21 2016-08-30 Qualcomm Incorporated Hybrid transformer structure on semiconductor devices
KR20140068391A (ko) 2012-11-28 2014-06-09 엘지전자 주식회사 자기장의 자유도를 향상하기 위한 코일의 구조
US9203373B2 (en) 2013-01-11 2015-12-01 Qualcomm Incorporated Diplexer design using through glass via technology
US9172441B2 (en) 2013-02-08 2015-10-27 Rf Micro Devices, Inc. Front end circuitry for carrier aggregation configurations
US10002700B2 (en) 2013-02-27 2018-06-19 Qualcomm Incorporated Vertical-coupling transformer with an air-gap structure
US9634645B2 (en) 2013-03-14 2017-04-25 Qualcomm Incorporated Integration of a replica circuit and a transformer above a dielectric substrate
GB2512586B (en) 2013-04-02 2015-08-12 Broadcom Corp Switch arrangement
US20140327510A1 (en) 2013-05-06 2014-11-06 Qualcomm Incorporated Electronic device having asymmetrical through glass vias
US9449753B2 (en) 2013-08-30 2016-09-20 Qualcomm Incorporated Varying thickness inductor
US20150092314A1 (en) 2013-09-27 2015-04-02 Qualcomm Incorporated Connector placement for a substrate integrated with a toroidal inductor
US20150130579A1 (en) 2013-11-12 2015-05-14 Qualcomm Incorporated Multi spiral inductor
US20150194944A1 (en) 2014-01-09 2015-07-09 Qualcomm Incorporated Wideband matching network
US9906318B2 (en) 2014-04-18 2018-02-27 Qualcomm Incorporated Frequency multiplexer
CN203942319U (zh) 2014-07-15 2014-11-12 张立武 一种无线充电器及其工作状态指示灯

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1628360A (zh) * 2002-06-04 2005-06-15 Bi科技有限公司 屏蔽电感器
CN102231313A (zh) * 2009-12-08 2011-11-02 上海华虹Nec电子有限公司 利用金属并联的多层堆叠电感

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