JP6221736B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6221736B2 JP6221736B2 JP2013267685A JP2013267685A JP6221736B2 JP 6221736 B2 JP6221736 B2 JP 6221736B2 JP 2013267685 A JP2013267685 A JP 2013267685A JP 2013267685 A JP2013267685 A JP 2013267685A JP 6221736 B2 JP6221736 B2 JP 6221736B2
- Authority
- JP
- Japan
- Prior art keywords
- spiral inductor
- spiral
- wiring
- inner end
- inductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 31
- 239000000758 substrate Substances 0.000 claims description 19
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F17/0013—Printed inductances with stacked layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F2017/0073—Printed inductances with a special conductive pattern, e.g. flat spiral
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F5/00—Coils
- H01F5/003—Printed circuit coils
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/906—Dram with capacitor electrodes used for accessing, e.g. bit line is capacitor plate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Coils Or Transformers For Communication (AREA)
Description
図1は、本発明の実施の形態1に係る半導体装置を示す上面図である。図2は図1のI−IIに沿った断面図である。半導体基板1は、GaAs基板、Si基板、SiGe基板、GaN on SiC基板、又はGaN on Si基板などである。
図5は、本発明の実施の形態2に係る半導体装置を示す上面図である。図6は図5のI−IIに沿った断面図である。直線状配線4cは、直線状配線2cの上方とスパイラルインダクタ2の配線間の隙間にまたがるように配置されている。このため、実施の形態1のように直線状配線4cを直線状配線2cの上方に配置するよりも互いの配線間の結合容量を小さくできる。従って、カットオフ周波数の微調整が容易となり、インダクダンス値の修正を容易にできる。
図9は、本発明の実施の形態3に係る半導体装置を示す上面図である。図10は図9のI−IIに沿った断面図である。平面視において、スパイラルインダクタ4の配線は、スパイラルインダクタ2の配線間の隙間に配置される。そして、スパイラルインダクタ4の配線の側壁が誘電体膜3を介してスパイラルインダクタ2の配線の側壁に対向している。
Claims (3)
- 半導体基板と、
前記半導体基板上に設けられ、第1の内端部及び第1の外端部を有する渦巻き状の配線である第1のスパイラルインダクタと、
前記第1のスパイラルインダクタを覆う誘電体膜と、
前記誘電体膜上に設けられ、第2の内端部及び第2の外端部を有する渦巻き状の配線である第2のスパイラルインダクタと、
前記誘電体膜を貫通して前記第1の内端部と前記第2の内端部を電気的に接続する接続部とを備え、
前記第1のスパイラルインダクタの前記第1の外端部から前記第1の内端部に向かう回転方向と、前記第2のスパイラルインダクタの前記第2の内端部から前記第2の外端部に向かう回転方向とが同じであり、
前記第1のスパイラルインダクタは第1の調整用配線を有し、
前記第2のスパイラルインダクタは、前記第1の調整用配線に平行な第2の調整用配線を有し、
前記第2の調整用配線は前記誘電体膜を介して前記第1の調整用配線の上方に配置され、
前記第1及び第2の調整用配線以外の部分では、平面視において、前記第2のスパイラルインダクタの配線は前記第1のスパイラルインダクタの配線間の隙間に配置され、
前記第2の調整用配線は、前記第1の調整用配線の上方と前記第1のスパイラルインダクタの配線間の隙間にまたがるように配置されていることを特徴とする半導体装置。 - 前記第1及び第2のスパイラルインダクタは複数の直線状配線が渦巻き状に配置されたものであることを特徴とする請求項1に記載の半導体装置。
- 前記半導体基板上に設けられ、前記第1及び第2の外端部の少なくとも一方に接続された半導体回路を更に備えることを特徴とする請求項1又は2に記載の半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013267685A JP6221736B2 (ja) | 2013-12-25 | 2013-12-25 | 半導体装置 |
US14/463,841 US9035423B1 (en) | 2013-12-25 | 2014-08-20 | Semiconductor device with inductor having interleaved windings for controlling capacitance |
DE102014222768.2A DE102014222768B4 (de) | 2013-12-25 | 2014-11-07 | Halbleitervorrichtung |
KR1020140180947A KR101642758B1 (ko) | 2013-12-25 | 2014-12-16 | 반도체장치 |
CN201410826626.8A CN104752394B (zh) | 2013-12-25 | 2014-12-25 | 半导体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013267685A JP6221736B2 (ja) | 2013-12-25 | 2013-12-25 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015126023A JP2015126023A (ja) | 2015-07-06 |
JP6221736B2 true JP6221736B2 (ja) | 2017-11-01 |
Family
ID=53054627
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013267685A Active JP6221736B2 (ja) | 2013-12-25 | 2013-12-25 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9035423B1 (ja) |
JP (1) | JP6221736B2 (ja) |
KR (1) | KR101642758B1 (ja) |
CN (1) | CN104752394B (ja) |
DE (1) | DE102014222768B4 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10283257B2 (en) * | 2016-01-08 | 2019-05-07 | Qualcomm Incorporated | Skewed co-spiral inductor structure |
JP6505820B1 (ja) * | 2017-12-18 | 2019-04-24 | 昭和電線ケーブルシステム株式会社 | 非接触給電装置およびコイル |
KR102069632B1 (ko) | 2018-02-22 | 2020-01-23 | 삼성전기주식회사 | 인덕터 |
Family Cites Families (60)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5010588A (ja) * | 1973-05-25 | 1975-02-03 | ||
JPS61265857A (ja) * | 1985-05-20 | 1986-11-25 | Matsushita Electronics Corp | 半導体装置 |
US4959631A (en) * | 1987-09-29 | 1990-09-25 | Kabushiki Kaisha Toshiba | Planar inductor |
JPH0377360A (ja) * | 1989-08-18 | 1991-04-02 | Mitsubishi Electric Corp | 半導体装置 |
JPH0389548A (ja) * | 1989-08-31 | 1991-04-15 | Fujitsu Ltd | 半導体集積回路 |
JP3102125B2 (ja) * | 1992-02-28 | 2000-10-23 | 富士電機株式会社 | 薄膜磁気素子 |
JP3141562B2 (ja) * | 1992-05-27 | 2001-03-05 | 富士電機株式会社 | 薄膜トランス装置 |
JPH0710913U (ja) * | 1993-07-19 | 1995-02-14 | 東和エレクトロン株式会社 | チップインダクタ |
JP3487461B2 (ja) * | 1994-12-17 | 2004-01-19 | ソニー株式会社 | 変成器及び増幅器 |
JP3725599B2 (ja) * | 1995-09-07 | 2005-12-14 | 株式会社東芝 | 平面型磁気素子 |
JP3177954B2 (ja) | 1997-11-20 | 2001-06-18 | 日本電気株式会社 | 半導体装置およびその製造方法 |
TW386279B (en) * | 1998-08-07 | 2000-04-01 | Winbond Electronics Corp | Inductor structure with air gap and method of manufacturing thereof |
FR2790328B1 (fr) * | 1999-02-26 | 2001-04-20 | Memscap | Composant inductif, transformateur integre, notamment destines a etre incorpores dans un circuit radiofrequence,et circuit integre associe avec un tel composant inductif ou transformateur integre |
TW430935B (en) * | 1999-03-19 | 2001-04-21 | Ind Tech Res Inst | Frame type bonding pad structure having a low parasitic capacitance |
JP2001052928A (ja) * | 1999-08-17 | 2001-02-23 | Tif:Kk | インダクタ素子 |
US6476704B2 (en) * | 1999-11-18 | 2002-11-05 | The Raytheon Company | MMIC airbridge balun transformer |
US6429504B1 (en) * | 2000-05-16 | 2002-08-06 | Tyco Electronics Corporation | Multilayer spiral inductor and integrated circuits incorporating the same |
US6420773B1 (en) * | 2000-10-04 | 2002-07-16 | Winbond Electronics Corp. | Multi-level spiral inductor structure having high inductance (L) and high quality factor (Q) |
DE60214280T2 (de) * | 2001-05-24 | 2007-04-19 | Nokia Corp. | Induktive Anordnung auf einem Chip |
JP2003078017A (ja) * | 2001-08-31 | 2003-03-14 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP3792635B2 (ja) * | 2001-12-14 | 2006-07-05 | 富士通株式会社 | 電子装置 |
US6693499B2 (en) * | 2002-04-02 | 2004-02-17 | Northrop Grumman Corporation | Compact lumped element ring balun layout |
JP2003347123A (ja) * | 2002-05-29 | 2003-12-05 | Taiyo Yuden Co Ltd | 薄膜インダクタ及びそれを利用した電子機器 |
US6922128B2 (en) * | 2002-06-18 | 2005-07-26 | Nokia Corporation | Method for forming a spiral inductor |
US6707367B2 (en) * | 2002-07-23 | 2004-03-16 | Broadcom, Corp. | On-chip multiple tap transformer and inductor |
JP2004221475A (ja) * | 2003-01-17 | 2004-08-05 | Mitsubishi Electric Corp | 誘導素子 |
DE10392479T5 (de) * | 2003-02-04 | 2005-12-29 | Mitsubishi Denki K.K. | Spiralförmige Induktionsspule und Übertrager |
TWI236763B (en) * | 2003-05-27 | 2005-07-21 | Megic Corp | High performance system-on-chip inductor using post passivation process |
US7095307B1 (en) * | 2003-07-17 | 2006-08-22 | Broadcom Corporation | Fully differential, high Q, on-chip, impedance matching section |
US6972658B1 (en) * | 2003-11-10 | 2005-12-06 | Rf Micro Devices, Inc. | Differential inductor design for high self-resonance frequency |
JP4012526B2 (ja) * | 2004-07-01 | 2007-11-21 | Tdk株式会社 | 薄膜コイルおよびその製造方法、ならびにコイル構造体およびその製造方法 |
US7265433B2 (en) * | 2005-01-13 | 2007-09-04 | International Business Machines Corporation | On-pad broadband matching network |
US7619296B2 (en) * | 2005-02-03 | 2009-11-17 | Nec Electronics Corporation | Circuit board and semiconductor device |
JP2006216883A (ja) * | 2005-02-07 | 2006-08-17 | Matsushita Electric Ind Co Ltd | 半導体集積回路装置 |
KR100698617B1 (ko) * | 2005-02-15 | 2007-03-21 | 삼성전자주식회사 | 집적 인덕터를 포함한 집적회로 |
US7598838B2 (en) * | 2005-03-04 | 2009-10-06 | Seiko Epson Corporation | Variable inductor technique |
JP4668719B2 (ja) * | 2005-07-25 | 2011-04-13 | Okiセミコンダクタ株式会社 | インダクタの特性調整方法 |
JP2007318362A (ja) | 2006-05-24 | 2007-12-06 | Sharp Corp | 高周波電力増幅器及び移動体通信端末 |
US8219060B2 (en) * | 2006-07-28 | 2012-07-10 | Qualcomm Incorporated | Dual inductor circuit for multi-band wireless communication device |
US7538652B2 (en) * | 2006-08-29 | 2009-05-26 | International Business Machines Corporation | Electrical component tuned by conductive layer deletion |
US8327523B2 (en) * | 2006-11-28 | 2012-12-11 | Semiconductor Components Industries, Llc | High density planarized inductor and method of making the same |
FR2911992A1 (fr) * | 2007-01-30 | 2008-08-01 | St Microelectronics Sa | Inductance multiniveaux |
TWI366261B (en) * | 2007-11-01 | 2012-06-11 | Via Tech Inc | Inductor structure |
TWI371766B (en) * | 2007-12-26 | 2012-09-01 | Via Tech Inc | Inductor structure |
JP5252486B2 (ja) * | 2008-05-14 | 2013-07-31 | 学校法人慶應義塾 | インダクタ素子、集積回路装置、及び、三次元実装回路装置 |
TWI357086B (en) * | 2008-07-03 | 2012-01-21 | Advanced Semiconductor Eng | Transformer and method for adjusting mutual induct |
JP2010147701A (ja) * | 2008-12-17 | 2010-07-01 | Murata Mfg Co Ltd | 電子部品 |
TWI385680B (zh) * | 2009-05-19 | 2013-02-11 | Realtek Semiconductor Corp | 螺旋電感之堆疊結構 |
WO2010150403A1 (ja) * | 2009-06-26 | 2010-12-29 | 三菱電機株式会社 | 無線通信装置 |
JP2011077423A (ja) * | 2009-10-01 | 2011-04-14 | Tohoku Univ | 半導体集積回路および集積回路製造方法および集積回路設計方法 |
JP5110178B2 (ja) * | 2010-04-13 | 2012-12-26 | 株式会社デンソー | 半導体装置およびその製造方法 |
JP5521862B2 (ja) * | 2010-07-29 | 2014-06-18 | 三菱電機株式会社 | 半導体装置の製造方法 |
EP2421011A1 (en) * | 2010-08-19 | 2012-02-22 | Nxp B.V. | Symmetrical inductor |
WO2012060775A1 (en) * | 2010-10-18 | 2012-05-10 | Nanyang Technological University | Miniaturized passive low pass filter |
JP2013153011A (ja) * | 2012-01-24 | 2013-08-08 | Mitsubishi Electric Corp | 半導体装置 |
WO2013125369A1 (ja) * | 2012-02-21 | 2013-08-29 | 株式会社村田製作所 | 分波装置 |
US20130244343A1 (en) * | 2012-03-19 | 2013-09-19 | Inpaq Technology Co., Ltd. | Method for preparing a thin film device and method for preparing a common mode filter using the same |
US8803648B2 (en) * | 2012-05-03 | 2014-08-12 | Qualcomm Mems Technologies, Inc. | Three-dimensional multilayer solenoid transformer |
KR101408505B1 (ko) * | 2012-11-07 | 2014-06-17 | 삼성전기주식회사 | 커먼 모드 필터 및 그 제조방법 |
US9449753B2 (en) * | 2013-08-30 | 2016-09-20 | Qualcomm Incorporated | Varying thickness inductor |
-
2013
- 2013-12-25 JP JP2013267685A patent/JP6221736B2/ja active Active
-
2014
- 2014-08-20 US US14/463,841 patent/US9035423B1/en active Active
- 2014-11-07 DE DE102014222768.2A patent/DE102014222768B4/de active Active
- 2014-12-16 KR KR1020140180947A patent/KR101642758B1/ko active IP Right Grant
- 2014-12-25 CN CN201410826626.8A patent/CN104752394B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
DE102014222768B4 (de) | 2017-09-14 |
JP2015126023A (ja) | 2015-07-06 |
DE102014222768A1 (de) | 2015-06-25 |
KR101642758B1 (ko) | 2016-07-26 |
US9035423B1 (en) | 2015-05-19 |
CN104752394B (zh) | 2017-11-10 |
CN104752394A (zh) | 2015-07-01 |
KR20150075364A (ko) | 2015-07-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP3096353B1 (en) | Rf amplifier output circuit device with integrated current path | |
EP3139505B1 (en) | Impedance matching device with coupled resonator structure | |
US7312685B1 (en) | Symmetrical inductor | |
US7305223B2 (en) | Radio frequency circuit with integrated on-chip radio frequency signal coupler | |
KR100617887B1 (ko) | 품질 팩터가 높은 오버랩핑 공진기를 갖는 멀티칩 모듈 | |
JP5767495B2 (ja) | 可変インダクタ及びこれを用いた半導体装置 | |
JP4871164B2 (ja) | 半導体集積回路 | |
JP4946219B2 (ja) | 可変インダクタ及びこれを用いた半導体装置 | |
US20060038257A1 (en) | Semiconductor device which includes an inductor therein and a manufacturing method thereof | |
US7633368B2 (en) | On-chip inductor | |
US7724116B2 (en) | Symmetrical inductor | |
JP6221736B2 (ja) | 半導体装置 | |
JP2006094557A (ja) | 半導体素子及び高周波電力増幅装置並びに無線通信機 | |
JP2013153011A (ja) | 半導体装置 | |
US7893795B2 (en) | Circuit device having inductor and capacitor in parallel connection | |
US10650949B2 (en) | Semiconductor device | |
US8542077B2 (en) | High-frequency circuit | |
US9565764B2 (en) | Inductor and MMIC | |
JP4471757B2 (ja) | 可変インダクタ | |
JP2010232765A (ja) | インダクタおよびキャパシタを備えた電気回路 | |
WO2014207498A1 (en) | High frequency amplifier | |
US20220182472A1 (en) | Radio-frequency module and communication device | |
JPH0661058A (ja) | 半導体集積回路装置 | |
JP5598461B2 (ja) | 可変インダクタ及びこれを用いた半導体装置 | |
KR102161854B1 (ko) | 광대역 rf 반도체 패키지 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160929 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170711 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170801 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170824 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170905 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170918 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6221736 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |