CN104396030A - 制造led或太阳能电池的结构的方法 - Google Patents

制造led或太阳能电池的结构的方法 Download PDF

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CN104396030A
CN104396030A CN201380032574.0A CN201380032574A CN104396030A CN 104396030 A CN104396030 A CN 104396030A CN 201380032574 A CN201380032574 A CN 201380032574A CN 104396030 A CN104396030 A CN 104396030A
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manufacture method
basic structure
layer
substrate
multiple basic
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CN104396030B (zh
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帕斯卡·昆纳德
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Soitec SA
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Soitec SA
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Abstract

本发明涉及一种制造方法，该制造方法包括以下步骤：在第一基板(10)上形成各自包括至少一个p型层(20)、有源区域(18)和n型层(12)的多个基本LED或光生伏打结构；在所述多个基本结构上形成第一平面金属层(42)；提供包括第二平面金属层(46)的转印基板(50)；通过在室温下通过分子粘附结合所述第一金属层和第二金属层(42,46)来将所述多个基本结构与所述转印基板(50)组装在一起；以及去除所述第一基板(10)。

Description

制造LED或太阳能电池的结构的方法
技术领域和背景技术
本发明涉及发光二极管(LED)和太阳能(光生伏打)电池的制造。
LED通常由与包括至少一个n型层或区域、一个p型层或区域和布置在n型层与p型层之间的有源层的这些层的层叠对应的基本结构制造。
至于太阳能电池，它们由包括至少一个p-n结(p型层和n型层的结)的基本结构制造。这些基本结构能够包括多个p-n结。如为本领域技术人员所公知的，p-n结包含与位于该结周围的空间电荷区域(ZCE)对应的有源区域。
以上所提到的基本结构能够由上面通过外延生长形成有必要层的层叠的相同生长基板形成，然后从基板当中切割这个层叠的各部分以使基本LED或光生伏打结构隔离。
然而，完全或部分地在各个基本结构的层次上单独地执行其它LED或太阳能电池制造操作，诸如通过形成n接触垫和p接触垫进行布线、执行后续处理所尤其需要的生长支承的拆卸/去除，意味着基本结构彼此分离并且因此一次处理一个结构。
相同情况适用于在机械支承上组装LED或太阳能电池中涉及的操作或适用于沉积对于各个器件单独地执行的光转换材料(“磷光体”)的操作。
图1A示意性表示在切去包括多个相同的LED结构的生长基板(例如，蓝宝石)之后所获得的基本LED结构3。基本LED结构3由n型层4、有源层5和p型层6的层叠组成。该基本LED结构3形成在生长基板2上并且在p型层6的上表面上还包括反射层(镜)7，全体因此形成多层结构1。
如所知道的，然后利用晶片结合基板8在镜层7的暴露的表面上组装多层结构1(图1B)。传统上，通过热压结合来制备这个组件是有用的，这个结合需要施加特定压力和特别高的温度(高于300℃)以便保证组件的坚固性。例如，能够利用使得能实现要结合的两个表面之间的焊接的金-锡合金来执行这个结合。
在组装完成后，从多层结构1的其余部分中去除生长基板2(作为临时基板)，对于这样的去除的过程为本领域技术人员所公知(图1C)。
然而，本申请人已观察到与热压结合技术有关的数个主要缺点。
在热压结合期间温度的增加导致生长基板2以及最终基板8的明显热膨胀，这个膨胀度是这些基板的相应的热膨胀系数(CTE)的函数。为了获得令人满意的结合结果，因此有必要选取基板2和基板8的类型，使得它们在CTE方面与LED结构3兼容。太大的CTE失配很可能导致破裂，并且因此，很可能降低所述的结构的制造生产量。
在结合期间的高温度还产生生长基板的变形(下垂、翘曲)。当要结合的结构的生长基板是大的(例如，150mm或200mm)时这个变形现象被特别放大。然后有必要在组装期间施加较大的压力以便限制这些变形。因此，当前实践倾向于在最终基板上单独地结合各个LED结构以便在热压结合期间使机械应力最小化。
这些CTE兼容性约束大大限制了能够形成基板2和基板8的材料的选择。选择例如可以涉及到锗，然而，锗具有在材料市场上是昂贵的且相对难以获得的缺点。
因此存在对于有效的并且尤其使得能够免受以上所提到的约束和缺点的用于制造LED或太阳能电池的结构的技术的需要。
发明内容和目的
本发明涉及一种制造方法，该制造方法包括以下步骤：
a)在第一基板上形成多个基本LED或光生伏打结构，所述多个基本LED或光生伏打结构中的每一个都包括至少一个p型层、有源区域和n型层；
b)在所述多个基本结构上形成第一平面金属层；
c)提供转印基板，所述转印基板在所述转印基板的一个表面上包括第二平面金属层；
d)通过所述第一金属层和所述第二金属层的结合将所述多个基本结构与所述转印基板组装在一起，所述结合通过分子粘附在室温下执行；以及
e)去除所述第一基板。
本发明的制造方法有利地使得能够免受由传统热压结合(如以上所指示的)所需的压力和温度条件导致的机械应力。用来形成第一基板(支承基板)和转印基板的材料的选择因此大大扩展，因为不再需要与基本结构的严格CTE兼容性。
因此例如选取任何材料来形成支承基板变得可能：它例如可以是硅(在大容积上广泛可用的且相对经济的)的或金属(钼，等)的基板。
在特定实施方式中，在所述第一基板上的所述多个基本结构通过沟槽彼此间隔开。。
所述制造方法在步骤a)和步骤b)之间还可以包括：将绝缘材料沉积在存在于所述多个基本结构之间的所述沟槽中。
所述多个基本结构中的每一个基本结构可以都形成在松弛材料或部分松弛材料的岛上，该材料例如是InGaN。
根据第二实施方式，所述制造方法在步骤b)之前还包括：在所述多个基本结构中的每一个基本结构的暴露的表面上形成p型电接触垫或n型电接触垫。
所述方法因此使得能够在存在于支承基板上的所有基本结构上集体地形成电接触垫。集体形成在器件制造生产量方面提供了相当大的改进。
在LED或太阳能电池器件已被制造并且彼此分离之后，这些垫使得能够确保这些基本结构与转印基板之间的电连接。
根据第三实施方式，步骤b)和c)各自包括第一金属层和第二金属层的抛光的相应子步骤以获得小于或等于1nm RMS的表面粗糙度，步骤d)通过在室温下通过分子粘附的结合来执行。
预先获得这样的表面质量使得然后能够在有利的条件下执行通过分子粘附的结合。
所述制造方法在步骤d)和步骤e)之间还包括在小于或等于100℃的温度下的退火步骤。该退火使得能够显著地改进通过分子粘附的结合的质量。
此外，能够用从包括Cu、Al、Ti和W的组中选择的材料来制备第一金属层和第二金属层。这两个金属层可以具有相同的组分或具有不同的组分。
在第一变例中，步骤a)中形成的所述多个基本结构是其中每一个都包括至少一个p-n结的多个光生伏打结构。
在第二变例中，步骤a)中形成的所述多个基本结构是其中所述有源区域是发光层的多个LED结构。
根据特定实施方式，所述制造方法在步骤e)之后还包括切割所述转印基板以分离所述多个基本结构的步骤。
附图说明
本发明的其它特性和优点将由在下面参照附图所提供的描述显现，附图例示了不应该被认为是限制性的实施方式的示例。图中：
图1A至图1C是示出了制造LED器件的已知方法的原理步骤的示意横截面图；
图2A至图2I是示出了根据本发明的第一实施方式的LED器件的制造的示意横截面图；
图3是在图2A至图2I中所描述的第一实施方式中实现的原理步骤的流程图；
图4A至4I是示出了根据本发明的第二实施方式的LED器件的制造的示意透视图和横截面图；并且
图5是在图4A至图4I中所描述的第二实施方式中实现的原理步骤的流程图。
具体实施方式
本发明适用于各自包括至少一个p型层、有源区域和n型层的基本LED或光生伏打(即，太阳能电池)结构的制造。
应当注意，在下面所描述的本发明的实施方式的示例涉及LED器件的制造。然而，应当理解，本发明同样地适用于太阳能电池的制造，这些电池各自包括含有至少一个p-n结(各个p-n结包括如以上所提到的有源区域)的基本光生伏打结构。
现在参照图2A至图2I和图3描述根据本发明的第一实施方式的制造LED器件的方法。
在第一实施方式中，从板或支承基板10实现该方法。在该示例中支承基板10是蓝宝石，其它材料然而是可能的，尤其诸如硅、碳化硅或锗。
n型层12(在厚度上大约1μm或2μm)、有源层14(大约10nm)和p型层16(在厚度上在大约100nm与200nm之间)首先通过外延生长相继地沉积在支承基板(10)上(分别为S2、S4和S6，图2A)。制备这些层的方式为本领域技术人员所知，进而将不在本文献中更详细地描述。
n型层和p型层能够以相反顺序形成，并且能够包括不同成分、厚度或掺杂浓度的数个子层，包括无意中掺杂的子层。
有源层18是发光(电致发光)层，该发光层能够由通过阻挡层彼此分离的发光量子阱的单个厚层或薄层形成，或由通过阻挡层彼此分离的发光量子阱的多个层形成。
然后执行蚀刻步骤(S8，图2B)以便将沟槽19布置在p型层16的整个厚度上(并且可选地还在有源层18的厚度的一部分中)以便在层16中形成p型岛20。
在这个阶段，然后具有结构28，该结构28包括多个基本LED结构25，多个基本LED结构25中的每一个都包括p型隔离岛20、有源层28和n型层12。应当注意，有源层18和n型层12这里为所有的基本LED结构25所共有。
作为非限制性示例，各个p型岛20这里有具有边长1mm的正方形形状。限定最终LED的形状和尺寸的至少一部分的这些岛20的形状和尺寸显然可以是不同的，其中岛20尤其能够具有圆形形状。
然后，通过等离子体增强化学气相沉积(PECVD)来沉积绝缘材料30(这里为SiO2)的层，以便覆盖基本LED结构25的暴露的表面和沟槽19(步骤S10，图2C)。在沉积之后，通过化学机械抛光(CMP)或通过任何其它适合的抛光技术(化学蚀刻，等)使绝缘材料30的这个层平面化。还能够通过公知的旋涂玻璃(SOG)技术来形成SiO2层30，该SOG技术在于将粘性SiO2前体组分沉积于在旋转器上的处于旋转的基板上。利用该沉积技术，SiO2层具有不需要后沉积抛光步骤的令人满意的表面质量。
然后，例如通过干式或湿式选择性化学蚀刻在各个p型岛20之上打开绝缘层30(步骤S12，图2D)。在该蚀刻步骤S12结束时，如此做出的开口32由绝缘层30的残余部34确定界限。为此，使用包括保护树脂层的蚀刻掩模，该保护树脂层具有确定要在结构中蚀刻的区域的界限的开口(不含树脂的区域)。
p接触垫36然后通过至少一个导电材料的后期沉积而形成在开口32中(步骤S14，图2E)。在接触垫36材料的沉积期间，所使用的掩模被保存以用于蚀刻开口32。在形成了p接触垫36后，去除蚀刻掩模的保护树脂，这使得能够同时去除沉积在开口32外的p接触垫36的构成材料。
该方法因此使得能够在存在于支承基板上的整个基本结构25上集体地形成电接触垫。集体形成在器件制造生产量方面提供了相当大的改进。
形成p接触垫138的层能够尤其包括：
-具有厚度在与5nm之间的诸如Ni、Pd或Pt的金属，以便获得良好的电阻率和良好的欧姆特性。
-反射器，例如形式为具有厚度大约100nm的Ag层，以便将朝向相对表面离开的光子(即，当结构被转印至最终基板时朝向p型层移动的那些，因此在n型层12一侧找到发射表面)返回至发射表面，以及
-扩散阻挡层，例如形式为具有厚度在20nm与50nm之间的WN或TiN层。
在制造工艺的这个阶段，具有形式为板的结构38，该板具有多个基本结构25，多个基本结构25中的每一个设置有p接触垫36。
接下来是在结构38的整个上表面38a上形成金属层40以便覆盖基本结构25以及绝缘部34(步骤S16，图2F)。金属层40例如通过等离子体增强化学气相沉积(PECVD)或适于形成薄层的为本领域技术人员所知的任何其它技术(SOG技术，等)来制备。能够例如完全通过PVD(例如，在铝的金属层40的情况下)或CVD(可选地后面是电沉积阶段)来执行金属沉积。所使用的沉积技术取决于构成层40的金属。
如图2F所示，如此沉积的金属层40在一定程度上遵循底层外形(特别是由绝缘部34与p接触垫36相关地所形成的轮廓)的形式。在该示例中，绝缘部34形成相对于相邻p岛20在高度上大约1μm的“阶梯”。选择了金属层40的厚度以便然后能够在接下来的步骤S18期间适当地平面化(见下文)。在该示例中，金属层的厚度是大约3μm。
应该注意，金属层40能够包括多个导电子层或能够由导电材料的单层组成。金属层40能够包括例如由以下导电材料中的一个(或至少两个的组合)组成的至少一个子层：铜、铝、钛和钨。另选地，金属层40由例如由以上所提到的材料中的一种形成的单层组成。
然后通过化学机械抛光(CMP)来制备金属层40使得残余金属层42的上表面42a具有足够的平面度以使得能实现后续结合(步骤S18，图2G)。这个抛光例如使得能够获得小于或等于1nm RMS并且优选地小于或等于0.5nm RMS的表面粗糙度42a(应该注意，本文献中用RMS给出的粗糙度值对应于1μm×1μm的表面)。如在下面所指示的，所需粗糙度具体地取决于要在接下来的结合步骤S22期间使用的结合技术(见下文)。
在该示例中，抛光S18后面是金属层42的上表面42a的清洗步骤以便消除由抛光步骤S18产生的微粒(步骤S20，图2G)。
必须以不改变在抛光步骤S18结束时事先获得的暴露的表面42a的粗糙度的这样一种方式执行清洗S20。此外，该清洗步骤S20必须使得能够去除能够由暴露的表面42a的抛光S18产生的最多残余物。
在工艺的这个阶段，以板的形式获得了结构45，该板具有多个基本LED结构25，多个基本LED结构25中的每一个都设置有p接触垫，这些结构25覆盖有平面金属层42。金属层42所需要的粗糙度然而能够根据要在接下来的结合步骤S22中采用的结合技术稍微变化(见下文)。
应该注意，作为变例，可以在进行金属层40的沉积S16之前执行结构38的暴露的表面38a的化学机械抛光(CMP)的第一步骤。在该金属沉积之后，像由步骤S18中所指示的那样执行第二化学机械抛光，以便适当地使金属层40的暴露的表面平面化。该变例使得能够显著地节约要沉积以形成金属层40的金属的量(在第一抛光步骤期间去除在金属层40下面的轮廓)。当所使用的金属是昂贵的时，这样的节约是特别有利的(例如，针对金的情况)。另一方面，该变例涉及在成本和生产率方面同样有影响的附加的抛光步骤。
在执行了清洗步骤S20后，转印基板(或接收方基板)50被结合在结构45的上表面42a上，以便获得新的结构52(步骤S22，图2H)。
转印基板50可以是半导体材料(例如，硅)或金属(钼、钨等)。
在该示例中，转印基板50在其结合表面50a上包括在结合步骤S22期间与金属层42接触的金属层46。金属层42可以由以下元素当中的至少一个组成：Cu、Al、Ti和W。
还应当注意，视情况而定，金属层42和46能够具有相同的组分或具有不同的组分。
根据一个变例，转印基板50由单个金属板(例如，铜、钨等的板)构成。在这种情况下，转印基板50的主体的一个表面在结合步骤S22期间与金属层42直接接触。
至于表面42a，转印基板50的结合表面50a是平面的以便能够在有利的条件下执行与结构45结合。如在下面所说明的，结合表面50a所需要的粗糙度然而能够根据在组装步骤S22期间采用的结合技术稍微变化。
在第一变例中，通过靠分子粘附(在室温下(例如，在20℃与30℃之间))结合金属层42和46来执行结构45在转印基板50上的组装。对于要在有利的条件下执行的通过分子粘附的结合，金属层42和46的结合表面42a和50a的粗糙度小于1nmRMS并且优选地小于或等于0.5nm RMS是必要的。因此必须以如实现这样的粗糙度这样的方式配置金属层42的抛光的步骤S18。而且，能够在与结构45结合之前对转印基板50的结合表面50a执行抛光步骤(CMP，例如)。然而，能够在转印基板50的这样的抛光不是必要的情况下实现所需粗糙度：例如，当金属层46是很薄的层(例如，5nm)或转印基板50是全金属的时，情况可以是这样的。
如本身公知的，还被称作直接结合的通过分子粘附结合的原理基于使两个表面(这里，表面42a和50a)的直接接触，即，而不使用特定结合材料(粘合剂、蜡、焊料等)。这样的操作要求要结合的表面是足够平滑的且无微粒或污染，并且要求它们足够接近以使得能够通常在小于几个纳米的距离处开始接触。在这种情况下，两个表面之间的吸引力足够大以致于引起分子粘附(由要结合的两个表面的原子或分子之间的电子相互作用的吸引力(范德瓦尔斯力)的总和所引发的结合)。
能够通过在结构45和/或转印基板50的至少一个位置上(优选地在板的周边上)施加压力点来发起通过分子粘附的结合。然后从施加压力所在的点传播这两个板之间的结合波。然而，这样的压力的施加不一定发起结合波的传播。
在通过分子粘附结合之后，能够在适度温度(优选地小于或等于100℃)下执行退火，以便加强结构45在转印基板50上的结合。
根据第二变例，在室温下通过压缩执行步骤S22中的结合。该技术使得能够尤其在表面42a和/或50a的粗糙度是较大的(通常在0.5nm RMS与5nm RMS之间)时并且具体地在表面42a和50a是不够平面的以允许通过分子粘附结合时获得结构45在转印基板50上的结合。
根据第三变例，在小于或等于100℃的温度下通过压缩执行步骤S22中的结合。能够执行温度方面的这个适度上升以便促进结构45在转印基板50上的结合。在压缩结合期间施加的温度是基板10和基板50的材料的函数，并且更具体地，是这两个基板的CTE的函数。所选温度当然必须是这样的，即由于CTE失配而导致的破裂的风险是最小的。
转印基板50必须优选地使得能够确保对于最终LED器件的良好机械支承以及对p接触垫36的访问。在该示例中，转印基板50从其结合表面50a一侧包括通过绝缘材料的各部分彼此绝缘的铜接触垫(未示出)，这些部分例如是SiN。这些接触垫中的每一个形成在与p接触垫36的至少一部分对准的位置处。对位于表面50a上的转印基板50的接触垫的访问例如通过跨越转印基板50到其相反表面50b的厚度的垂直电子连接(未示出)(还被称作“通孔”)而确保。
转印基板50能够尤其由铝或多晶AlN、良热导体组成，或由硅组成。
在组装了转印基板50和结构45后，例如尤其在蓝宝石基板的情况下通过激光剥离的公知技术或通过化学蚀刻来去除支承基板10(步骤S24，图2I)。
在通过激光剥离或另一非破坏性技术去除的情况下，能够再使用支承基板101。
在工艺的这个阶段，获得结构60，从该结构60能够切出LED器件，所述LED器件的每一个都由被布线的并且装配有基板的一个或数个基本结构25形成，该基板设置有至少p连接。
应该注意，LED结构60的表面60a能够被蚀刻以便去除从支承基板10剩下的任何残余物并且能够被构造为增加光从其的提取(步骤S26，图2I)。能够尤其通过反应性等离子体蚀刻(含氯的或含氟的)或通过UV辅助化学(PEC)蚀刻来执行该蚀刻。
在这里所描述的示例中，然后可以在前表面上60a上形成位于n型层12上的n接触垫。能够在切割步骤之前对整个板集体地执行这些n接触垫的形成(以便同时对所有LED结构进行布线)，或另选地，能够在执行切割步骤后为各个LED器件独立地制备这些垫。
在白光LED器件的形成的情况下，将由这些器件发射的光转换为白色光的发光材料的层还能够例如通过对表面60a施加液体磷光体基组分后面是退火以使扩散溶剂(旋涂玻璃)蒸发而沉积在LED结构60的表面60a上。
而且，例如通过将微结构纳米或微米印刷在结构60的表面60a上，LED器件能够设置有诸如菲涅耳(Fresnel)透镜的微结构。
此外，切割步骤使得能够在制造工艺结束时使存在于结构60中的LED结构分离。
本发明的制造方法有利地使得能够免受由用于通过传统热压结合(如以上所指示的)所需要的压力和温度条件产生的机械应力。用来形成支承基板和转印基板的材料的选择因此大大扩展，因为不再需要与基本LED结构的严格CTE兼容性。因此例如选取任何材料以形成支承基板变得可能：它例如可以是硅(在大容积上广泛可用的且相对经济的)的或金属(钼，等)的基板。
优选地依靠通过分子粘附的结合在室温下执行支承基板和转印基板的组装是特别有利的。这种结合使得能够限制在结合期间对基板施加的机械应力，并且能够避免然后可能导致变形的任何热膨胀。能够形成基板的材料的选择因此大大地扩展。
图4A至图4I和图5表示根据本发明的第二实施方式的LED器件的制造。
该第二实施方式大体上与以上参照图2A至图2I和图3所描述的第一实施方式非常相似。
该第二实施方式与第一实施方式的不同之处在于，这些基本LED结构(这里标注为125)形成在复合生长基板100上，复合生长基板100包括支承基板110、埋层102和生长岛104(图2A和图2B)。
这里的支承基板101由蓝宝石构成。基板110还能够由尤其诸如硅、碳化硅或锗的半导体材料组成。埋层102是这里用SiO2制备的适应层。生长岛104是从松弛材料的生长层(这里为例如通过外延生长在GaN的种子层上并且然后经由埋层102转印至支承基板110上所制备InGaN的层)获得的。
这里在生长层中制备沟槽119以便确定InGaN生长岛104的界限。这些沟槽还使得能够减小要松弛的InGaN表面。InGaN层的松弛在本发明的制造方法之前例如借助于事先布置在InGaN(未示出)下方的稍微粘性的层(例如，硼磷硅酸盐玻璃(BPSG))的退火来执行。
基本LED结构125通过根据与在以上在第一实施方式中描述的相应步骤S2、S4和S6期间相同的条件相继地通过外延生长在生长岛104上沉积n型层112、有源层118和p型层120而形成(分别为步骤S102、S104和S106)。
该第二实施方式与以上所描述的第一实施不同的方式在于，沟槽119被布置以便完全使基本结构125彼此分离(即，基本结构125的n型层112和有源层118不为其它基本结构125所共有)。
根据与以上所描述的步骤S10、S12、S14、S16、S18、S20、S22、S24和S26相同的条件执行接下来的步骤S110、S112、S114、S116、S118、S120、S122、S124和S126，为了简明，将不再次对它们进行描述。
元件130、132、134、136、138、140、142、145、146、150、152和160分别尤其对应于以上所描述的元件30、32、34、36、38、40、42、45、46、50、52和60并且根据相同的条件被制备。
第二实施方式与以上所描述的第一实施方式的不同之处还在于，它在支承基板110的去除S124之后，包括例如通过化学蚀刻消除S125埋层102然后消除生长岛104(图4I)。
SiO2的埋层102这里使得能够促进支承基板110的拆卸。
在执行了步骤S125后，可以按照与在第一实施方式的消除步骤S25中相同的方式从支承基板110、埋层102和生长岛104去除任何残余物。
以上关于第一实施方式所描述的优点同样适用于该第二实施方式。

Claims (12)

1.一种制造方法，该制造方法包括以下步骤：
a)在第一基板上形成多个基本LED或光生伏打结构，所述多个基本LED或光生伏打结构中的每一个都包括至少一个p型层、有源区域和n型层；
b)在所述多个基本结构上形成第一平面金属层；
c)提供转印基板，所述转印基板在所述转印基板的一个表面上包括第二平面金属层；
d)通过所述第一金属层和所述第二金属层的结合将所述多个基本结构与所述转印基板组装在一起，所述结合通过分子粘附在室温下执行；以及
e)去除所述第一基板。
2.根据权利要求1所述的制造方法，其中，在所述第一基板上的所述多个基本结构通过沟槽彼此间隔开。
3.根据权利要求2所述的制造方法，其中，所述制造方法在步骤a)和步骤b)之间还包括：将绝缘材料沉积在存在于所述多个基本结构之间的所述沟槽中。
4.根据权利要求2或3所述的制造方法，其中，所述多个基本结构中的每一个基本结构都形成在松弛材料或部分松弛材料的岛上。
5.根据权利要求4所述的制造方法，其中，所述松弛材料或部分松弛材料是InGaN。
6.根据权利要求1至5中的任何一项所述的制造方法，所述制造方法在步骤b)之前还包括：在所述多个基本结构中的每一个基本结构的暴露的表面上形成p型电接触垫或n型电接触垫。
7.根据权利要求1至6中的任何一项所述的制造方法，步骤b)和步骤c)各自包括所述第一金属层和所述第二金属层的相应抛光以获得小于或等于1nm RMS的表面粗糙度的子步骤。
8.根据权利要求7所述的制造方法，所述制造方法在步骤d)和步骤e)之间还包括在小于或等于100℃的温度下的退火步骤。
9.根据权利要求1至8中的任何一项所述的制造方法，其中，利用从包括Cu、Al、Ti和W的组中选择的材料来制备所述第一金属层和所述第二金属层。
10.根据权利要求1至9中的任何一项所述的制造方法，其中，步骤a)中形成的所述多个基本结构是其中每一个都包括至少一个p-n结的多个光生伏打结构。
11.根据权利要求1至9中的任何一项所述的制造方法，其中，步骤a)中形成的所述多个基本结构是其中所述有源区域是发光层的多个LED结构。
12.根据权利要求1至11中的任何一项所述的制造方法，所述制造方法在步骤e)之后还包括切割所述转印基板以分离所述多个基本结构的步骤。
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