JP2015526889A - Led又は太陽電池セルの構造を製造する方法 - Google Patents
Led又は太陽電池セルの構造を製造する方法 Download PDFInfo
- Publication number
- JP2015526889A JP2015526889A JP2015517701A JP2015517701A JP2015526889A JP 2015526889 A JP2015526889 A JP 2015526889A JP 2015517701 A JP2015517701 A JP 2015517701A JP 2015517701 A JP2015517701 A JP 2015517701A JP 2015526889 A JP2015526889 A JP 2015526889A
- Authority
- JP
- Japan
- Prior art keywords
- manufacturing
- layer
- substrate
- basic
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims description 26
- 239000000758 substrate Substances 0.000 claims abstract description 87
- 229910052751 metal Inorganic materials 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 49
- 230000010070 molecular adhesion Effects 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 24
- 238000005498 polishing Methods 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 11
- 238000000137 annealing Methods 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 230000003746 surface roughness Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 102
- 238000005530 etching Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- -1 thicknesses Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
- H01L25/042—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/142—Energy conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
- H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3512—Cracking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
a)第1の基板上に、それぞれが少なくとも1つのp型層、活性区域、及びn型層を備える複数の基本LED又は光電池構造を形成するステップと、
b)基本構造上に第1の平面金属層を形成するステップと、
c)第2の平面金属層を表面の1つに備える移転基板を用意するステップと、
d)第1及び第2の金属層のボンディングによって、移転基板を用いて基本構造を組み立てるステップであって、ボンディングは室温での分子付着によって行われる、ステップと、
e)第1の基板を除去するステップと
含む製造方法に関する。
良好な抵抗率及び良好なオーム特性を得るための、1Å〜5nmの厚さを有するNi、Pd、又はPtなどの金属、
反対面に向かって出る光子(すなわち、構造が最終基板に移転されたときにp型層に向かって移動する光子であり、従って放射面はn型層12の側に見出される)を、放射面に戻すための、例えば約100nmの厚さを有するAgの層の形でのリフレクタ、
例えば20〜50nmの厚さを有するWN又はTiNの層の形での拡散バリア。
Claims (12)
- a)第1の基板上に、それぞれが少なくとも1つのp型層、活性区域、及びn型層を備える複数の基本LED又は光電池構造を形成するステップと、
b)前記基本構造上に第1の平面金属層を形成するステップと、
c)第2の平面金属層を表面の1つに備える移転基板を用意するステップと、
d)前記第1及び第2の金属層のボンディングによって、前記移転基板を用いて前記基本構造を組み立てるステップであって、ボンディングは室温での分子付着によって行われる、ステップと、
e)前記第1の基板を除去するステップと
を含む製造方法。 - 前記第1の基板上の前記基本構造が、トレンチによって互いに隔てられる、請求項1に記載の製造方法。
- ステップa)とb)の間に、
前記基本構造の間に存在する前記トレンチ内に、絶縁材料を堆積するステップ
をさらに含む、請求項2に記載の製造方法。 - 前記基本構造のそれぞれが、緩和された又は部分的に緩和された材料のアイランド上に形成される、請求項2又は3に記載の製造方法。
- 前記緩和された又は部分的に緩和された材料がInGaNである、請求項4に記載の製造方法。
- ステップb)の前に、前記基本構造のそれぞれの露出された面に、p又はn型電気的コンタクトパッドを形成するステップをさらに含む、請求項1〜5のいずれか一項に記載の製造方法。
- ステップb)及びc)がそれぞれ、前記第1及び第2の金属層をそれぞれ研磨して、1nm RMS以下の表面粗さを得るサブステップを含む、請求項1〜6のいずれか一項に記載の製造方法。
- ステップd)とe)の間に、100℃以下の温度においてアニールするステップをさらに含む、請求項7に記載の製造方法。
- 前記第1及び第2の金属層が、Cu、Al、Ti及びWを含む群から選択される材料において用意される、請求項1〜8のいずれか一項に記載の製造方法。
- ステップa)において形成される前記基本構造は、それぞれが少なくとも1つpn接合を備える光電池構造である、請求項1〜9のいずれか一項に記載の製造方法。
- ステップa)において形成される前記基本構造がLED構造であり、前記活性区域が発光層である、請求項1〜9のいずれか一項に記載の製造方法。
- ステップe)の後に、前記基本構造を分離するために、前記移転基板を切り離すステップをさらに含む、請求項1〜11のいずれか一項に記載の製造方法。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1255934 | 2012-06-22 | ||
FR1255931 | 2012-06-22 | ||
FR1255934A FR2992466A1 (fr) | 2012-06-22 | 2012-06-22 | Procede de realisation de contact pour led et structure resultante |
FR1255931A FR2992465B1 (fr) | 2012-06-22 | 2012-06-22 | Procede de fabrication collective de leds et structure pour la fabrication collective de leds |
FR1257617A FR2992473B1 (fr) | 2012-06-22 | 2012-08-06 | Procede de fabrication de structures de led ou de cellules solaires |
FR1257617 | 2012-08-06 | ||
PCT/EP2013/062423 WO2013189857A1 (en) | 2012-06-22 | 2013-06-14 | Method of manufacturing structures of leds or solar cells |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015526889A true JP2015526889A (ja) | 2015-09-10 |
JP6269664B2 JP6269664B2 (ja) | 2018-01-31 |
Family
ID=50864365
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015517701A Active JP6269664B2 (ja) | 2012-06-22 | 2013-06-14 | Led又は太陽電池セルの構造を製造する方法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US9478707B2 (ja) |
EP (1) | EP2865019B1 (ja) |
JP (1) | JP6269664B2 (ja) |
KR (1) | KR102087754B1 (ja) |
CN (1) | CN104396030B (ja) |
FR (2) | FR2992466A1 (ja) |
TW (1) | TWI493761B (ja) |
WO (1) | WO2013189857A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021509223A (ja) * | 2017-12-22 | 2021-03-18 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | エレクトロルミネッセンス構造体を転移させる方法 |
JP2021535588A (ja) * | 2018-09-11 | 2021-12-16 | フェイスブック・テクノロジーズ・リミテッド・ライアビリティ・カンパニーFacebook Technologies, Llc | ウエハーツーウエハーボンディングのためのメサ形成 |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2992466A1 (fr) | 2012-06-22 | 2013-12-27 | Soitec Silicon On Insulator | Procede de realisation de contact pour led et structure resultante |
DE102013103601A1 (de) * | 2013-04-10 | 2014-10-16 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
FR3023065B1 (fr) * | 2014-06-27 | 2017-12-15 | Commissariat Energie Atomique | Dispositif optoelectronique a jonction p-n permettant une ionisation de dopants par effet de champ |
DE102015108056A1 (de) * | 2015-05-21 | 2016-11-24 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil, optoelektronische Anordnung und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
FR3038127B1 (fr) | 2015-06-24 | 2017-06-23 | Commissariat Energie Atomique | Procede de fabrication d'une pluralite de dipoles en forme d'ilots ayant des electrodes auto-alignees |
FR3043254B1 (fr) * | 2015-11-04 | 2018-03-16 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de realisation d'un dispositif electronique |
ES2896179T3 (es) * | 2016-05-13 | 2022-02-24 | Commissariat Energie Atomique | Procedimiento de fabricación de un dispositivo optoelectrónico que incluye una pluralidad de diodos de nitruro de galio |
WO2017200845A1 (en) | 2016-05-20 | 2017-11-23 | Lumileds Llc | Method of forming a p-type layer for a light emitting device |
SG11201908017RA (en) | 2017-03-17 | 2019-10-30 | Soitec Silicon On Insulator | Growth substrate for forming optoelectronic devices, method for manufacturing such a substrate, and use of the substrate, in particular in the field of micro-display screens |
FR3079071B1 (fr) | 2018-03-13 | 2020-02-28 | Soitec | Procede de fabrication d'une pluralite d'ilots semi-conducteurs cristallins prensentant une variete de parametres de maille |
FR3079070B1 (fr) | 2018-03-13 | 2020-02-28 | Soitec | Procede de fabrication d'une pluralite d'ilots semi-conducteurs cristallins presentant une variete de parametres de maille |
FR3064108B1 (fr) | 2017-03-17 | 2022-12-30 | Soitec Silicon On Insulator | Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel susbstrat, et utilisation du susbtrat notamment dans le domaine des micro-ecrans d'affichage |
DE102017117414A1 (de) * | 2017-08-01 | 2019-02-07 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement |
KR102419593B1 (ko) * | 2017-10-23 | 2022-07-12 | 삼성전자주식회사 | 발광 다이오드 및 그의 제조 방법 |
US20190198709A1 (en) * | 2017-12-22 | 2019-06-27 | Lumileds Llc | Iii-nitride multi-color on wafer micro-led enabled by tunnel junctions |
CN110504281A (zh) * | 2018-05-16 | 2019-11-26 | 财团法人工业技术研究院 | 显示阵列的制造方法 |
TWI688121B (zh) * | 2018-08-24 | 2020-03-11 | 隆達電子股份有限公司 | 發光二極體結構 |
US11342479B2 (en) | 2018-09-11 | 2022-05-24 | Facebook Technologies, Llc | Reducing bowing of materials before wafer-to-wafer bonding for LED manufacturing |
US11145786B2 (en) | 2018-09-11 | 2021-10-12 | Facebook Technologies, Llc | Methods for wafer-to-wafer bonding |
US11245051B2 (en) * | 2018-10-12 | 2022-02-08 | Boe Technology Group Co., Ltd. | Micro light emitting diode apparatus and fabricating method thereof |
US20200171544A1 (en) * | 2018-11-29 | 2020-06-04 | Ascent Ventures, Llc | High Frequency Ultrasonic Transducer and Method of Fabrication |
US11152540B2 (en) | 2019-07-29 | 2021-10-19 | Lextar Electronics Corporation | Light emitting diode structure and method of manufacturing thereof |
GB2586862B (en) * | 2019-09-06 | 2021-12-15 | Plessey Semiconductors Ltd | LED precursor incorporating strain relaxing structure |
US11038088B2 (en) | 2019-10-14 | 2021-06-15 | Lextar Electronics Corporation | Light emitting diode package |
WO2021114222A1 (zh) * | 2019-12-13 | 2021-06-17 | 苏州晶湛半导体有限公司 | 半导体结构的制作方法 |
US11264530B2 (en) | 2019-12-19 | 2022-03-01 | Lumileds Llc | Light emitting diode (LED) devices with nucleation layer |
US11211527B2 (en) | 2019-12-19 | 2021-12-28 | Lumileds Llc | Light emitting diode (LED) devices with high density textures |
JP7424038B2 (ja) * | 2019-12-23 | 2024-01-30 | セイコーエプソン株式会社 | 発光装置、および、プロジェクター |
TWI740438B (zh) * | 2020-03-31 | 2021-09-21 | 聚積科技股份有限公司 | 微型發光二極體的轉移方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006269664A (ja) * | 2005-03-23 | 2006-10-05 | Fuji Xerox Co Ltd | 発光デバイス、光通信システム、および発光デバイスの製造方法 |
JP2006319311A (ja) * | 2005-04-12 | 2006-11-24 | Sharp Corp | 窒化物系半導体発光素子およびその製造方法 |
JP2006334652A (ja) * | 2005-06-03 | 2006-12-14 | Ebara Corp | 金属接合方法 |
JP2007271676A (ja) * | 2006-03-30 | 2007-10-18 | Kyocera Corp | ファイバ型光線路、ファイバ型部品及び光モジュール |
JP2008263126A (ja) * | 2007-04-13 | 2008-10-30 | Oki Data Corp | 半導体装置、該半導体装置の製造方法、ledヘッド、及び画像形成装置 |
JP2009105123A (ja) * | 2007-10-22 | 2009-05-14 | Showa Denko Kk | 発光ダイオードおよびその製造方法 |
JP2011014897A (ja) * | 2009-06-05 | 2011-01-20 | Sumitomo Chemical Co Ltd | 半導体基板、光電変換デバイス、半導体基板の製造方法、および光電変換デバイスの製造方法 |
JP2011071273A (ja) * | 2009-09-25 | 2011-04-07 | Toshiba Corp | 半導体発光装置の製造方法及び半導体発光装置 |
JP2012503861A (ja) * | 2008-09-24 | 2012-02-09 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | 複合基板上に成長された半導体発光デバイス |
JP2012256810A (ja) * | 2011-06-07 | 2012-12-27 | Jiaotong Univ | 集積回路と発光ダイオードを備えた異種集積構造及びその製造方法 |
Family Cites Families (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3921885A (en) * | 1973-06-28 | 1975-11-25 | Rca Corp | Method of bonding two bodies together |
US5565266A (en) | 1993-06-14 | 1996-10-15 | Eastman Kodak Company | Multilayer magnetooptic recording media |
US5563000A (en) | 1994-03-11 | 1996-10-08 | Eastman Kodak Company | Multilayer magnetooptic recording media |
US6281524B1 (en) * | 1997-02-21 | 2001-08-28 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device |
US6037644A (en) * | 1997-09-12 | 2000-03-14 | The Whitaker Corporation | Semi-transparent monitor detector for surface emitting light emitting devices |
JP2000020937A (ja) | 1998-07-03 | 2000-01-21 | Hitachi Ltd | 磁気記録媒体およびこれを用いた磁気記憶装置 |
US20030036483A1 (en) * | 2000-12-06 | 2003-02-20 | Arendt Paul N. | High temperature superconducting thick films |
JP4198900B2 (ja) | 2001-07-19 | 2008-12-17 | アルプス電気株式会社 | 交換結合膜及び前記交換結合膜を用いた磁気検出素子 |
JP4189146B2 (ja) | 2001-07-19 | 2008-12-03 | アルプス電気株式会社 | 交換結合膜及び前記交換結合膜を用いた磁気検出素子 |
JP2003031870A (ja) | 2001-07-19 | 2003-01-31 | Alps Electric Co Ltd | 交換結合膜及び前記交換結合膜を用いた磁気検出素子 |
US20030189215A1 (en) | 2002-04-09 | 2003-10-09 | Jong-Lam Lee | Method of fabricating vertical structure leds |
JP2003332649A (ja) | 2002-05-14 | 2003-11-21 | Alps Electric Co Ltd | 磁気検出素子 |
US6653704B1 (en) | 2002-09-24 | 2003-11-25 | International Business Machines Corporation | Magnetic memory with tunnel junction memory cells and phase transition material for controlling current to the cells |
US7092220B2 (en) | 2003-07-29 | 2006-08-15 | Hitachi Global Storage Technologies | Apparatus for enhancing thermal stability, improving biasing and reducing damage from electrostatic discharge in self-pinned abutted junction heads having a first self-pinned layer extending under the hard bias layers |
US7282277B2 (en) | 2004-04-20 | 2007-10-16 | Seagate Technology Llc | Magnetic recording media with Cu-containing magnetic layers |
US7449345B2 (en) | 2004-06-15 | 2008-11-11 | Headway Technologies, Inc. | Capping structure for enhancing dR/R of the MTJ device |
US7122840B2 (en) | 2004-06-17 | 2006-10-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor with optical guard ring and fabrication method thereof |
KR100616600B1 (ko) * | 2004-08-24 | 2006-08-28 | 삼성전기주식회사 | 수직구조 질화물 반도체 발광소자 |
JP2006165059A (ja) | 2004-12-02 | 2006-06-22 | Sony Corp | 記憶素子及びメモリ |
TWI244228B (en) * | 2005-02-03 | 2005-11-21 | United Epitaxy Co Ltd | Light emitting device and manufacture method thereof |
JP4933130B2 (ja) | 2006-02-16 | 2012-05-16 | 昭和電工株式会社 | GaN系半導体発光素子およびその製造方法 |
JP2008124381A (ja) | 2006-11-15 | 2008-05-29 | Sharp Corp | 太陽電池 |
US20080170329A1 (en) | 2007-01-11 | 2008-07-17 | Seagate Technology Llc | Granular perpendicular magnetic recording media with improved corrosion resistance by SUL post-deposition heating |
TW200837943A (en) | 2007-01-22 | 2008-09-16 | Led Lighting Fixtures Inc | Fault tolerant light emitters, systems incorporating fault tolerant light emitters and methods of fabricating fault tolerant light emitters |
JP2010518536A (ja) | 2007-02-03 | 2010-05-27 | ダブリューディー メディア インコーポレイテッド | 改良された異方性磁界を有する垂直磁気記録媒体 |
US20090032970A1 (en) * | 2007-07-31 | 2009-02-05 | Park Chang-Min | Stacking of integrated circuits using glassy metal bonding |
JP2009116930A (ja) | 2007-11-02 | 2009-05-28 | Hitachi Global Storage Technologies Netherlands Bv | 垂直磁気記録媒体およびそれを用いた磁気記録再生装置 |
KR20090074396A (ko) | 2008-01-02 | 2009-07-07 | 삼성전자주식회사 | 강유전체를 이용한 정보저장매체, 그 제조방법, 및 이를채용한 정보저장장치 |
CN101971368A (zh) * | 2008-03-13 | 2011-02-09 | 昭和电工株式会社 | 半导体发光元件及其制造方法 |
KR20090122728A (ko) * | 2008-05-26 | 2009-12-01 | 삼성전자주식회사 | 비선형 태양전지 모듈 |
DE102009025015A1 (de) * | 2008-07-08 | 2010-02-18 | Seoul Opto Device Co. Ltd., Ansan | Lichtemittierende Vorrichtung und Verfahren zu ihrer Herstellung |
US20100019222A1 (en) * | 2008-07-25 | 2010-01-28 | High Power Opto.Inc. | Low-temperature led chip metal bonding layer |
CN101640240A (zh) * | 2008-07-28 | 2010-02-03 | 富准精密工业(深圳)有限公司 | 发光二极管制造方法 |
FR2936903B1 (fr) | 2008-10-07 | 2011-01-14 | Soitec Silicon On Insulator | Relaxation d'une couche de materiau contraint avec application d'un raidisseur |
KR100945800B1 (ko) | 2008-12-09 | 2010-03-05 | 김영혜 | 이종 접합 웨이퍼 제조방법 |
EP2412006A1 (en) | 2009-02-05 | 2012-02-01 | S.O.I.Tec Silicon on Insulator Technologies | Epitaxial methods and structures for forming semiconductor materials |
US8580593B2 (en) | 2009-09-10 | 2013-11-12 | Micron Technology, Inc. | Epitaxial formation structures and associated methods of manufacturing solid state lighting devices |
US9082534B2 (en) | 2009-09-15 | 2015-07-14 | Samsung Electronics Co., Ltd. | Magnetic element having perpendicular anisotropy with enhanced efficiency |
JP5493624B2 (ja) | 2009-09-15 | 2014-05-14 | ソニー株式会社 | 画像表示装置及び電子機器 |
KR101198758B1 (ko) * | 2009-11-25 | 2012-11-12 | 엘지이노텍 주식회사 | 수직구조 반도체 발광소자 및 그 제조방법 |
JP2011148979A (ja) | 2009-12-22 | 2011-08-04 | Panasonic Electric Works Co Ltd | プリント配線板用エポキシ樹脂組成物、樹脂フィルム、プリプレグ、金属箔付き樹脂シート、フレキシブルプリント配線板 |
US20110174376A1 (en) * | 2010-01-19 | 2011-07-21 | Amberwave, Inc. | Monocrystalline Thin Cell |
JP2011171273A (ja) | 2010-01-25 | 2011-09-01 | Hitachi Chem Co Ltd | 電極用ペースト組成物及び太陽電池 |
JP2011198962A (ja) | 2010-03-18 | 2011-10-06 | Toshiba Corp | 半導体発光素子の製造方法 |
SG175482A1 (en) | 2010-05-04 | 2011-11-28 | Agency Science Tech & Res | Multi-bit cell magnetic memory with perpendicular magnetization and spin torque switching |
JP5356312B2 (ja) * | 2010-05-24 | 2013-12-04 | 株式会社東芝 | 半導体発光装置 |
US9070851B2 (en) | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
CN103190005A (zh) | 2010-11-04 | 2013-07-03 | 皇家飞利浦电子股份有限公司 | 基于结晶弛豫结构的固态发光器件 |
FR2967813B1 (fr) | 2010-11-18 | 2013-10-04 | Soitec Silicon On Insulator | Procédé de réalisation d'une structure a couche métallique enterrée |
JP2012114184A (ja) * | 2010-11-24 | 2012-06-14 | Hitachi Cable Ltd | 発光ダイオード |
US8786036B2 (en) | 2011-01-19 | 2014-07-22 | Headway Technologies, Inc. | Magnetic tunnel junction for MRAM applications |
US8508006B2 (en) | 2011-05-10 | 2013-08-13 | Magic Technologies, Inc. | Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications |
US9245563B2 (en) | 2011-05-17 | 2016-01-26 | Showa Denko K.K. | Magnetic medium with an orientation control layer |
JP5768498B2 (ja) | 2011-05-23 | 2015-08-26 | ソニー株式会社 | 記憶素子、記憶装置 |
JP5177256B2 (ja) | 2011-06-03 | 2013-04-03 | 富士電機株式会社 | 垂直磁気記録媒体およびその製造方法 |
US8492169B2 (en) | 2011-08-15 | 2013-07-23 | Magic Technologies, Inc. | Magnetic tunnel junction for MRAM applications |
US9679664B2 (en) | 2012-02-11 | 2017-06-13 | Samsung Electronics Co., Ltd. | Method and system for providing a smart memory architecture |
US8871365B2 (en) | 2012-02-28 | 2014-10-28 | Headway Technologies, Inc. | High thermal stability reference structure with out-of-plane aniotropy to magnetic device applications |
US8941950B2 (en) | 2012-05-23 | 2015-01-27 | WD Media, LLC | Underlayers for heat assisted magnetic recording (HAMR) media |
FR2992466A1 (fr) | 2012-06-22 | 2013-12-27 | Soitec Silicon On Insulator | Procede de realisation de contact pour led et structure resultante |
KR101446338B1 (ko) | 2012-07-17 | 2014-10-01 | 삼성전자주식회사 | 자기 소자 및 그 제조 방법 |
JP5961490B2 (ja) | 2012-08-29 | 2016-08-02 | 昭和電工株式会社 | 磁気記録媒体及び磁気記録再生装置 |
US20140242419A1 (en) | 2013-02-28 | 2014-08-28 | Showa Denko Hd Singapore Pte Ltd. | Perpendicular recording medium for hard disk drives |
US9499899B2 (en) | 2013-03-13 | 2016-11-22 | Intermolecular, Inc. | Systems, methods, and apparatus for production coatings of low-emissivity glass including a ternary alloy |
US9206078B2 (en) | 2013-03-13 | 2015-12-08 | Intermolecular, Inc. | Barrier layers for silver reflective coatings and HPC workflows for rapid screening of materials for such barrier layers |
JP6199618B2 (ja) | 2013-04-12 | 2017-09-20 | 昭和電工株式会社 | 磁気記録媒体、磁気記憶装置 |
US9341685B2 (en) | 2013-05-13 | 2016-05-17 | HGST Netherlands B.V. | Antiferromagnetic (AFM) grain growth controlled random telegraph noise (RTN) suppressed magnetic head |
WO2014184988A1 (ja) | 2013-05-16 | 2014-11-20 | パナソニックIpマネジメント株式会社 | 半導体装置及びその製造方法 |
-
2012
- 2012-06-22 FR FR1255934A patent/FR2992466A1/fr active Pending
- 2012-08-06 FR FR1257617A patent/FR2992473B1/fr active Active
-
2013
- 2013-06-14 US US14/405,632 patent/US9478707B2/en active Active
- 2013-06-14 KR KR1020147036038A patent/KR102087754B1/ko active IP Right Grant
- 2013-06-14 WO PCT/EP2013/062423 patent/WO2013189857A1/en active Application Filing
- 2013-06-14 JP JP2015517701A patent/JP6269664B2/ja active Active
- 2013-06-14 EP EP13728426.1A patent/EP2865019B1/en active Active
- 2013-06-14 CN CN201380032574.0A patent/CN104396030B/zh active Active
- 2013-06-21 TW TW102122243A patent/TWI493761B/zh active
-
2016
- 2016-10-24 US US15/332,412 patent/US9865786B2/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006269664A (ja) * | 2005-03-23 | 2006-10-05 | Fuji Xerox Co Ltd | 発光デバイス、光通信システム、および発光デバイスの製造方法 |
JP2006319311A (ja) * | 2005-04-12 | 2006-11-24 | Sharp Corp | 窒化物系半導体発光素子およびその製造方法 |
JP2006334652A (ja) * | 2005-06-03 | 2006-12-14 | Ebara Corp | 金属接合方法 |
JP2007271676A (ja) * | 2006-03-30 | 2007-10-18 | Kyocera Corp | ファイバ型光線路、ファイバ型部品及び光モジュール |
JP2008263126A (ja) * | 2007-04-13 | 2008-10-30 | Oki Data Corp | 半導体装置、該半導体装置の製造方法、ledヘッド、及び画像形成装置 |
JP2009105123A (ja) * | 2007-10-22 | 2009-05-14 | Showa Denko Kk | 発光ダイオードおよびその製造方法 |
JP2012503861A (ja) * | 2008-09-24 | 2012-02-09 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | 複合基板上に成長された半導体発光デバイス |
JP2011014897A (ja) * | 2009-06-05 | 2011-01-20 | Sumitomo Chemical Co Ltd | 半導体基板、光電変換デバイス、半導体基板の製造方法、および光電変換デバイスの製造方法 |
JP2011071273A (ja) * | 2009-09-25 | 2011-04-07 | Toshiba Corp | 半導体発光装置の製造方法及び半導体発光装置 |
JP2012256810A (ja) * | 2011-06-07 | 2012-12-27 | Jiaotong Univ | 集積回路と発光ダイオードを備えた異種集積構造及びその製造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021509223A (ja) * | 2017-12-22 | 2021-03-18 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | エレクトロルミネッセンス構造体を転移させる方法 |
JP7241757B2 (ja) | 2017-12-22 | 2023-03-17 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | エレクトロルミネッセンス構造体を転移させる方法 |
JP2021535588A (ja) * | 2018-09-11 | 2021-12-16 | フェイスブック・テクノロジーズ・リミテッド・ライアビリティ・カンパニーFacebook Technologies, Llc | ウエハーツーウエハーボンディングのためのメサ形成 |
JP7332680B2 (ja) | 2018-09-11 | 2023-08-23 | メタ プラットフォームズ テクノロジーズ, リミテッド ライアビリティ カンパニー | ウエハーツーウエハーボンディングのためのメサ形成 |
Also Published As
Publication number | Publication date |
---|---|
US9865786B2 (en) | 2018-01-09 |
FR2992473A1 (fr) | 2013-12-27 |
JP6269664B2 (ja) | 2018-01-31 |
CN104396030B (zh) | 2017-07-14 |
FR2992473B1 (fr) | 2015-06-05 |
US20150115290A1 (en) | 2015-04-30 |
EP2865019A1 (en) | 2015-04-29 |
KR102087754B1 (ko) | 2020-03-11 |
TW201405895A (zh) | 2014-02-01 |
CN104396030A (zh) | 2015-03-04 |
WO2013189857A1 (en) | 2013-12-27 |
KR20150023452A (ko) | 2015-03-05 |
FR2992466A1 (fr) | 2013-12-27 |
TWI493761B (zh) | 2015-07-21 |
EP2865019B1 (en) | 2018-08-01 |
US9478707B2 (en) | 2016-10-25 |
US20170040518A1 (en) | 2017-02-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6269664B2 (ja) | Led又は太陽電池セルの構造を製造する方法 | |
KR101874587B1 (ko) | 반도체 발광소자 및 이의 제조방법 | |
JP4565391B2 (ja) | 発光素子及びその製造方法 | |
CN104396033B (zh) | Led的集体制造的方法及led的集体制造的结构 | |
TWI527267B (zh) | 微發光二極體 | |
US7943942B2 (en) | Semiconductor light-emitting device with double-sided passivation | |
TWI536600B (zh) | 半導體發光裝置及其製造方法 | |
TWI469382B (zh) | 發光二極體結構與元件以及其製造方法 | |
TW201838194A (zh) | 垂直氮化鎵蕭特基二極體 | |
JP7418583B2 (ja) | モノリシック発光ダイオード前駆体を形成する方法 | |
US8222064B2 (en) | Vertical light emitting diode device structure and method of fabricating the same | |
KR102328383B1 (ko) | 광전자 반도체 칩을 제조하기 위한 방법, 및 광전자 반도체 칩 | |
TW201318236A (zh) | 具增大面積之氮化鎵發光二極體及其製造方法 | |
TW202207499A (zh) | 發光陣列 | |
TW201205865A (en) | Vertical light emitting diode device structure and method of fabricating the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160328 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170120 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170131 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20170501 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170621 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20171205 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20171218 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6269664 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |